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Du Y, Yang L, Gong J, Hu J, Liu J, Zhang S, Qu S, Chen J, Lee HS, Xu W. A Monolithic Neuromorphic Device for In-Sensor Tactile Computing. J Phys Chem Lett 2025:5312-5320. [PMID: 40393949 DOI: 10.1021/acs.jpclett.5c00583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2025]
Abstract
To emulate the tactile perception of human skin, the integration of tactile sensors with neuromorphic devices has emerged as a promising approach to achieve near-sensor information processing. Here, we present a monolithic electronic device that seamlessly integrates tactile perception and neuromorphic computing functionalities within a single architecture, with synaptic plasticity directly tunable by tactile inputs. This unique capability stems from our engineered device structure employing SnO2 nanowires as the conductive channel coupled with a pressure-sensitive chitosan layer ionic gating layer. The device demonstrates pressure-dependent memory retention and learning behaviors, effectively mimicking the enhanced cognitive functions observed in humans under stressful conditions. Furthermore, the integrated design exhibits potential for implementing bioinspired electronic systems requiring adaptive tactile information processing.
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Affiliation(s)
- Yi Du
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
| | - Jiahe Hu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Song Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Shangda Qu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Jiaxin Chen
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
| | - Hwa Sung Lee
- Department of Materials Science and Chemical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan 15588, Republic of Korea
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin 300350, China
- Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin, 300350, China
- Shenzhen Research Institute of Nankai University, Shenzhen 518000, China
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Chen L, Saleh S, Tavormina F, Di Mario L, Li J, Xie Z, Masciocchi N, Brabec CJ, Koldehofe B, Loi MA. Modulating Trapping in Low-Dimensional Lead-Tin Halides for Energy-Efficient Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2414430. [PMID: 40159894 PMCID: PMC12087727 DOI: 10.1002/adma.202414430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/24/2024] [Revised: 03/02/2025] [Indexed: 04/02/2025]
Abstract
Metal halide perovskites have drawn great attention for neuromorphic electronic devices in recent years, however, the toxicity of lead as well as the variability and energy consumption of operational devices still pose great challenges for further consideration of this material in neuromorphic computing applications. Here, a 2D Ruddlesden-Popper (RP) metal halides system of formulation BA2Pb0.5Sn0.5I4 (BA = n-butylammonium) is prepared that exhibits outstanding resistive switching memory performance after cesium carbonate (Cs2CO3) deposition. In particular, the device exhibits excellent switching characteristics (endurance of 5 × 105 cycles, ON/OFF ratio ≈105) and achieves 90.1% accuracy on the MNIST dataset. More importantly, a novel energy-efficient content addressable memory (CAM) architecture building on perovskite memristive devices for neuromorphic applications, called nCAM, is proposed, which has a minimum energy consumption of ≈0.025 fJ bit/cell. A mechanism involving the manipulation of trapping states through Cs2CO3 deposition is proposed to explain the resistive switching behavior of the memristive device.
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Affiliation(s)
- Lijun Chen
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
- CogniGron (Groningen Cognitive Systems and Materials Center)University of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
| | - Saad Saleh
- Bernoulli InstituteUniversity of GroningenNijenborgh 9Groningen9747 AGThe Netherlands
- CogniGron (Groningen Cognitive Systems and Materials Center)University of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
| | - Filippo Tavormina
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
- Dipartimento di Scienza e Alta Tecnologia and To.Sca.LabUniversità dell'Insubriavia Valleggio 11ComoI‐22100Italy
| | - Lorenzo Di Mario
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
| | - Jiaxiong Li
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
| | - Zhiqiang Xie
- Institute of Materials for Electronics and Energy Technology (i‐MEET)Department of Materials Science and EngineeringFriedrich‐Alexander‐UniversityErlangen‐Nürnberg Martensstrasse 791058ErlangenGermany
| | - Norberto Masciocchi
- Dipartimento di Scienza e Alta Tecnologia and To.Sca.LabUniversità dell'Insubriavia Valleggio 11ComoI‐22100Italy
| | - Christoph J. Brabec
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
- Institute of Materials for Electronics and Energy Technology (i‐MEET)Department of Materials Science and EngineeringFriedrich‐Alexander‐UniversityErlangen‐Nürnberg Martensstrasse 791058ErlangenGermany
| | - Boris Koldehofe
- CogniGron (Groningen Cognitive Systems and Materials Center)University of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
- Department of Computer Science and AutomationTechnische Universität IlmenauHelmholtzplatz. 598693IlmenauGermany
| | - Maria Antonietta Loi
- Zernike Institute for Advanced MaterialsUniversity of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
- CogniGron (Groningen Cognitive Systems and Materials Center)University of GroningenNijenborgh 4Groningen9747 AGThe Netherlands
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3
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Cui D, Pei M, Lin Z, Zhang H, Kang M, Wang Y, Gao X, Su J, Miao J, Li Y, Zhang J, Hao Y, Chang J. Versatile optoelectronic memristor based on wide-bandgap Ga 2O 3 for artificial synapses and neuromorphic computing. LIGHT, SCIENCE & APPLICATIONS 2025; 14:161. [PMID: 40229240 PMCID: PMC11997223 DOI: 10.1038/s41377-025-01773-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2024] [Revised: 01/15/2025] [Accepted: 01/31/2025] [Indexed: 04/16/2025]
Abstract
Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga2O3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance (Icc) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The "AND" and "OR" logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga2O3/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.
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Affiliation(s)
- Dongsheng Cui
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Zhenhua Lin
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China.
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China.
| | - Hong Zhang
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Mengyang Kang
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Yifei Wang
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Xiangxiang Gao
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
| | - Jie Su
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
| | - Jincheng Zhang
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Yue Hao
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China
| | - Jingjing Chang
- Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071, Xi'an, China.
- State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071, Xi'an, China.
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Luo Z, Wang W, Wu J, Ma G, Hou Y, Yang C, Wang X, Zheng F, Zhao Z, Zhao Z, Zhu L, Hu Z. Leveraging Dual Resistive Switching in Quasi-2D Perovskite Memristors for Integrated Non-volatile Memory, Synaptic Emulation, and Reservoir Computing. ACS APPLIED MATERIALS & INTERFACES 2025; 17:19879-19891. [PMID: 40106733 DOI: 10.1021/acsami.4c21159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2025]
Abstract
The increasing computational demands of artificial intelligence (AI) algorithms are exceeding the capabilities of conventional computing architectures, creating a strong need for novel materials and paradigms. Memristors that integrate diverse resistive switching (RS) behaviors provide a promising avenue for developing novel computing architectures. In this study, we achieve the coexistence of volatile and nonvolatile RS behaviors in quasi-2D perovskite memristor (Q-2DPM). The Q-2DPM exhibits competitive performance as a nonvolatile memory. Multiple synaptic functions have been successfully simulated on Q-2DPM, such as excitatory postsynaptic currents, paired-pulse facilitation, and long-term potentiation/depression. Furthermore, artificial neural networks using Q-2DPM synapses achieve high accuracy in MNIST image classification tasks. The Q-2DPM's inherent characteristics suitable for reservoir computing are also demonstrated through its application in a pulse-stream-based digital classification experiment, showcasing its impressive performance. The elucidation of the dual RS mechanisms within Q-2DPM provides fresh insights into memristor RS behavior and underscores the potential of achieving diverse computational units through a single device. This work paves the way for the implementation of physical neuromorphic hardware architectures and the advancement of sophisticated computational primitives, offering a significant step toward the next generation of computing technologies.
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Affiliation(s)
- Zhenwang Luo
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Weisheng Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Junhui Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Guohua Ma
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Yanna Hou
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Cheng Yang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Xu Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Fei Zheng
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Zhenfu Zhao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Ziqi Zhao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Liqiang Zhu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
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Zheng T, Xie X, Shi Q, Wu J, Yu C. Self-Powered Artificial Neuron Devices: Towards the All-In-One Perception and Computation System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2416897. [PMID: 39967364 DOI: 10.1002/adma.202416897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2024] [Revised: 02/07/2025] [Indexed: 02/20/2025]
Abstract
The increasing demand for energy supply in sensing units and the computational efficiency of computation units has prompted researchers to explore novel, integrated technology that offers high efficiency and low energy consumption. Self-powered sensing technology enables environmental perception without external energy sources, while neuromorphic computation provides energy-efficient and high-performance computing capabilities. The integration of self-powered sensing technology and neuromorphic computation presents a promising solution for an all-in-one system. This review examines recent developments and advancements in self-powered artificial neuron devices based on triboelectric, piezoelectric, and photoelectric effects, focusing on their structures, mechanisms, and functions. Furthermore, it compares the electrical characteristics of various types of self-powered artificial neuron devices and discusses effective methods for enhancing their performance. Additionally, this review provides a comprehensive summary of self-powered perception systems, encompassing tactile, visual, and auditory perception systems. Moreover, it elucidates recently integrated systems that combine perception, computing, and actuation units into all-in-one configurations, aspiring to realize closed-loop control. The seamless integration of self-powered sensing and neuromorphic computation holds significant potential for shaping a more intelligent future for humanity.
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Affiliation(s)
- Tong Zheng
- College of Electrical Science and Engineering, Southeast university, Nanjing, 210000, China
| | - Xinkai Xie
- College of Electrical Science and Engineering, Southeast university, Nanjing, 210000, China
| | - Qiongfeng Shi
- College of Electrical Science and Engineering, Southeast university, Nanjing, 210000, China
| | - Jun Wu
- College of Electrical Science and Engineering, Southeast university, Nanjing, 210000, China
| | - Cunjiang Yu
- Department of Electrical and Computer Engineering, Department of Mechanical Science and Engineering, Department of Materials Science and Engineering, Department of Bioengineering, Beckman Institute for Advanced Science and Technology, Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, 61801, USA
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Lin J, Wang Z, Lin Q, Sun J, Guo X, Wang Y, Lin L, Zhao Y, Liu Y, Li D, Li F. PbS Quantum Dot-Based Optoelectronic Memristors toward Multi-Task Reservoir Computing. J Phys Chem Lett 2025; 16:199-208. [PMID: 39714926 DOI: 10.1021/acs.jpclett.4c03350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2024]
Abstract
The rise of big data and the internet of things has driven the demand for multimodal sensing and high-efficiency low-latency processing. Inspired by the human sensory system, we present a multifunctional optoelectronic-memristor-based reservoir computing (OM-RC) system by utilizing a CuSCN/PbS quantum dots (QDs) heterojunction. The OM-RC system exhibits volatile and nonlinear responses to electrical signals and wide-spectrum optical stimuli covering ultraviolet, visible, and near-infrared (NIR) regions, enabling multitask processing of dynamic signals. The OM-RC system accurately performs health monitoring through dynamic electroencephalogram and electrocardiogram signal analysis and achieves object and traffic trajectory recognition for intelligent driving under challenging conditions like foggy environments. By collaboratively using the NIR perception and trajectory recognition, we develop a human-computer interaction authentication system that integrates finger veins and motion behaviors of humans, significantly enhancing the security of traditional fingerprint anticounterfeiting systems. This work demonstrates the potential of QD-based optoelectronic-memristor for multitask in-sensor processing applications.
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Affiliation(s)
- Jiasong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Zhen Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Jiayu Sun
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Xuan Guo
- Key Laboratory of Optoelectronic Science and Technology for Medicine of Ministry of Education, Fujian Provincial Key Laboratory of Photonics Technology, Fujian Normal University, Fuzhou 350117, China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Liangxu Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Key Laboratory of Flexible Electronics, Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou 350117, China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
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Kim Y, Baek JH, Im IH, Lee DH, Park MH, Jang HW. Two-Terminal Neuromorphic Devices for Spiking Neural Networks: Neurons, Synapses, and Array Integration. ACS NANO 2024; 18:34531-34571. [PMID: 39665280 DOI: 10.1021/acsnano.4c12884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2024]
Abstract
The ever-increasing volume of complex data poses significant challenges to conventional sequential global processing methods, highlighting their inherent limitations. This computational burden has catalyzed interest in neuromorphic computing, particularly within artificial neural networks (ANNs). In pursuit of advancing neuromorphic hardware, researchers are focusing on developing computation strategies and constructing high-density crossbar arrays utilizing history-dependent, multistate nonvolatile memories tailored for multiply-accumulate (MAC) operations. However, the real-time collection and processing of massive, dynamic data sets require an innovative computational paradigm akin to that of the human brain. Spiking neural networks (SNNs), representing the third generation of ANNs, are emerging as a promising solution for real-time spatiotemporal information processing due to their event-based spatiotemporal capabilities. The ideal hardware supporting SNN operations comprises artificial neurons, artificial synapses, and their integrated arrays. Currently, the structural complexity of SNNs and spike-based methodologies requires hardware components with biomimetic behaviors that are distinct from those of conventional memristors used in deep neural networks. These distinctive characteristics required for neuron and synapses devices pose significant challenges. Developing effective building blocks for SNNs, therefore, necessitates leveraging the intrinsic properties of the materials constituting each unit and overcoming the integration barriers. This review focuses on the progress toward memristor-based spiking neural network neuromorphic hardware, emphasizing the role of individual components such as memristor-based neurons, synapses, and array integration along with relevant biological insights. We aim to provide valuable perspectives to researchers working on the next generation of brain-like computing systems based on these foundational elements.
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Affiliation(s)
- Youngmin Kim
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Hyun Baek
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - In Hyuk Im
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Min Hyuk Park
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Material Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea
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8
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Nie W, Yu Y, Wang X, Wang R, Li SC. Spatially Informed Graph Structure Learning Extracts Insights from Spatial Transcriptomics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403572. [PMID: 39382177 PMCID: PMC11615819 DOI: 10.1002/advs.202403572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 08/04/2024] [Indexed: 10/10/2024]
Abstract
Embeddings derived from cell graphs hold significant potential for exploring spatial transcriptomics (ST) datasets. Nevertheless, existing methodologies rely on a graph structure defined by spatial proximity, which inadequately represents the diversity inherent in cell-cell interactions (CCIs). This study introduces STAGUE, an innovative framework that concurrently learns a cell graph structure and a low-dimensional embedding from ST data. STAGUE employs graph structure learning to parameterize and refine a cell graph adjacency matrix, enabling the generation of learnable graph views for effective contrastive learning. The derived embeddings and cell graph improve spatial clustering accuracy and facilitate the discovery of novel CCIs. Experimental benchmarks across 86 real and simulated ST datasets show that STAGUE outperforms 15 comparison methods in clustering performance. Additionally, STAGUE delineates the heterogeneity in human breast cancer tissues, revealing the activation of epithelial-to-mesenchymal transition and PI3K/AKT signaling in specific sub-regions. Furthermore, STAGUE identifies CCIs with greater alignment to established biological knowledge than those ascertained by existing graph autoencoder-based methods. STAGUE also reveals the regulatory genes that participate in these CCIs, including those enriched in neuropeptide signaling and receptor tyrosine kinase signaling pathways, thereby providing insights into the underlying biological processes.
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Affiliation(s)
- Wan Nie
- Department of Computer ScienceCity University of Hong KongHong Kong SARChina
| | - Yingying Yu
- Department of Computer ScienceCity University of Hong KongHong Kong SARChina
| | - Xueying Wang
- Department of Computer ScienceCity University of Hong KongHong Kong SARChina
- City University of Hong Kong (Dongguan)Dongguan523000China
| | - Ruohan Wang
- Department of Computer ScienceCity University of Hong KongHong Kong SARChina
| | - Shuai Cheng Li
- Department of Computer ScienceCity University of Hong KongHong Kong SARChina
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9
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Huang Z, Tong C, Zhao Y, Jiang L, Deng L, Gao X, He J, Jiang J. An Au 25 nanocluster/MoS 2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation. NANOSCALE 2024; 16:17064-17078. [PMID: 39189366 DOI: 10.1039/d4nr02350a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Color vision relies on three cone photoreceptors that are sensitive to different wavelengths of light. The interaction of three incident light wavelengths over time creates a fascinating color coupling perception, termed chromamorphic computing. However, the realization of this fascinating characteristic in semiconductor devices remains a great challenge. Herein, a mixed-dimensional optoelectronic transistor based on a novel metal nanocluster Au25(SC12H25)18 and two-dimensional MoS2 van der Waals (vdWaals) heterojunction is proposed for chromamorphic visual-afterimage emulation with red-green-blue three-color spatiotemporal coupling perception. This distinguished molecular-like electronic level of Au25 nanoclusters allows the transistor to have visible light-sensitive properties, endowing it with the ability to perceive color information. Moreover, the chromamorphic functions are realized using a color spatiotemporal coupling approach. By utilizing the photogating effect of light stimulus, the device exhibits visual experience-dependent plasticity in accordance with the Bienenstock-Cooper-Munro (BCM) learning rule. Most importantly, for the first time, intriguing visual afterimages could be implemented using a color sensitization approach based on a close relationship between visual persistence and negative afterimages. These results represent an important step towards a new generation of intelligent visual color perception systems for human-computer interaction, bionic robots, etc.
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Affiliation(s)
- Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
| | - Chuanjia Tong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Yanbo Zhao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Leyong Jiang
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan 410081, China
| | - Lianwen Deng
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Xiaohui Gao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Jun He
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan 410083, China.
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China
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10
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Lv Z, Zhu S, Wang Y, Ren Y, Luo M, Wang H, Zhang G, Zhai Y, Zhao S, Zhou Y, Jiang M, Leng YB, Han ST. Development of Bio-Voltage Operated Humidity-Sensory Neurons Comprising Self-Assembled Peptide Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405145. [PMID: 38877385 DOI: 10.1002/adma.202405145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 06/11/2024] [Indexed: 06/16/2024]
Abstract
Biomimetic humidity sensors offer a low-power approach for respiratory monitoring in early lung-disease diagnosis. However, balancing miniaturization and energy efficiency remains challenging. This study addresses this issue by introducing a bioinspired humidity-sensing neuron comprising a self-assembled peptide nanowire (NW) memristor with unique proton-coupled ion transport. The proposed neuron shows a low Ag+ activation energy owing to the NW and redox activity of the tyrosine (Tyr)-rich peptide in the system, facilitating ultralow electric-field-driven threshold switching and a high energy efficiency. Additionally, Ag+ migration in the system can be controlled by a proton source owing to the hydrophilic nature of the phenolic hydroxyl group in Tyr, enabling the humidity-based control of the conductance state of the memristor. Furthermore, a memristor-based neuromorphic perception neuron that can encode humidity signals into spikes is proposed. The spiking characteristics of this neuron can be modulated to emulate the strength-modulated spike-frequency characteristics of biological neurons. A three-layer spiking neural network with input neurons comprising these highly tunable humidity perception neurons shows an accuracy of 92.68% in lung-disease diagnosis. This study paves the way for developing bioinspired self-assembly strategies to construct neuromorphic perception systems, bridging the gap between artificial and biological sensing and processing paradigms.
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Affiliation(s)
- Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Yanyun Ren
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Mingtao Luo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hanning Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guohua Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shilong Zhao
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Minghao Jiang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
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11
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Shi J, Lin Y, Wang Z, Shan X, Tao Y, Zhao X, Xu H, Liu Y. Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314156. [PMID: 38822705 DOI: 10.1002/adma.202314156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 05/20/2024] [Indexed: 06/03/2024]
Abstract
Adaptive processing allows sensory systems to autonomically adjust their sensitivity with exposure to a constant sensory stimulus and thus organisms to adapt to environmental variations. Bioinspired electronics with adaptive functions are highly desirable for the development of neuromorphic sensory systems (NSSs). Herein, the functions of desensitization and sensitivity changing with background intensity (i.e., Weber's law), as two fundamental cues of sensory adaptation, are biorealistically demonstrated in an Ag nanowire (NW)-embedded sodium alginate (SA) based complementary memristor. In particular, Weber's law is experimentally emulated in a single complementary memristor. Furthermore, three types of adaptive NSS unit are constructed to realize a multiple perceptual capability that processes the stimuli of illuminance, temperature, and pressure signals. Taking neuromorphic vision as an example, scotopic and photopic adaptation functions are well reproduced for image enhancement against dark and bright backgrounds. Importantly, an NSS system with multisensory integration function is demonstrated by combining light and pressure spikes, where the accuracy of pattern recognition is obviously enhanced relative to that of an individual sense. This work offers a new strategy for developing neuromorphic electronics with adaptive functions and paves the way toward developing a highly efficient NSS.
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Affiliation(s)
- Jiajuan Shi
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
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12
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Liu X, Zhang Z, Zhou J, Liu W, Zhou G, Lee C. Artificial Intelligence-Enhanced Waveguide "Photonic Nose"- Augmented Sensing Platform for VOC Gases in Mid-Infrared. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400035. [PMID: 38576121 DOI: 10.1002/smll.202400035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 03/17/2024] [Indexed: 04/06/2024]
Abstract
On-chip nanophotonic waveguide sensor is a promising solution for miniaturization and label-free detection of gas mixtures utilizing the absorption fingerprints in the mid-infrared (MIR) region. However, the quantitative detection and analysis of organic gas mixtures is still challenging and less reported due to the overlapping of the absorption spectrum. Here,an Artificial-Intelligence (AI) assisted waveguide "Photonic nose" is presented as an augmented sensing platform for gas mixture analysis in MIR. With the subwavelength grating cladding supported waveguide design and the help of machine learning algorithms, the MIR absorption spectrum of the binary organic gas mixture is distinguished from arbitrary mixing ratio and decomposed to the single-component spectra for concentration prediction. As a result, the classification of 93.57% for 19 mixing ratios is realized. In addition, the gas mixture spectrum decomposition and concentration prediction show an average root-mean-square error of 2.44 vol%. The work proves the potential for broader sensing and analytical capabilities of the MIR waveguide platform for multiple organic gas components toward MIR on-chip spectroscopy.
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Affiliation(s)
- Xinmiao Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zixuan Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Jingkai Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Weixin Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
| | - Guangya Zhou
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore, 117608, Singapore
- NUS Suzhou Research Institute (NUSRI), Suzhou, Jiangsu, 215123, China
- NUS Graduate School's Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore, 117583, Singapore
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13
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Wang Y, Nie S, Liu S, Hu Y, Fu J, Ming J, Liu J, Li Y, He X, Wang L, Li W, Yi M, Ling H, Xie L, Huang W. Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404160. [PMID: 38815276 DOI: 10.1002/adma.202404160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shimiao Nie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yunfei Hu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yueqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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14
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Yao J, Wang Q, Zhang Y, Teng Y, Li J, Zhao P, Zhao C, Hu Z, Shen Z, Liu L, Tian D, Qiu S, Wang Z, Kang L, Li Q. Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing. Nat Commun 2024; 15:6147. [PMID: 39034334 PMCID: PMC11271480 DOI: 10.1038/s41467-024-50490-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 07/10/2024] [Indexed: 07/23/2024] Open
Abstract
Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.
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Affiliation(s)
- Jian Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qinan Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jing Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zongjie Shen
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liwei Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dan Tian
- College of Materials Science and Engineering, Co-Innovation Center of Effiicient Processing and Utilization of Forest Resources, Nanjing Forestry University, Nanjing, 210037, China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, 999077, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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15
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Liu J, Wang Y, Liu Y, Wu Y, Bian B, Shang J, Li R. Recent Progress in Wearable Near-Sensor and In-Sensor Intelligent Perception Systems. SENSORS (BASEL, SWITZERLAND) 2024; 24:2180. [PMID: 38610389 PMCID: PMC11014300 DOI: 10.3390/s24072180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 03/25/2024] [Accepted: 03/27/2024] [Indexed: 04/14/2024]
Abstract
As the Internet of Things (IoT) becomes more widespread, wearable smart systems will begin to be used in a variety of applications in people's daily lives, not only requiring the devices to have excellent flexibility and biocompatibility, but also taking into account redundant data and communication delays due to the use of a large number of sensors. Fortunately, the emerging paradigms of near-sensor and in-sensor computing, together with the proposal of flexible neuromorphic devices, provides a viable solution for the application of intelligent low-power wearable devices. Therefore, wearable smart systems based on new computing paradigms are of great research value. This review discusses the research status of a flexible five-sense sensing system based on near-sensor and in-sensor architectures, considering material design, structural design and circuit design. Furthermore, we summarize challenging problems that need to be solved and provide an outlook on the potential applications of intelligent wearable devices.
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Affiliation(s)
- Jialin Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Yitao Wang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
| | - Yiwei Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Yuanzhao Wu
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Baoru Bian
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
- Materials and Optoelectronics Research Center, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Runwei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, China Academy of Sciences, Ningbo 315201, China; (J.L.); (Y.W.); (Y.L.); (Y.W.); (B.B.)
- College of Materials Science and Opto-Electronic Technology, University of China Academy of Sciences, Beijing 100049, China
- Materials and Optoelectronics Research Center, University of Chinese Academy of Sciences, Beijing 100049, China
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16
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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17
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Zhu S, Xie T, Lv Z, Leng YB, Zhang YQ, Xu R, Qin J, Zhou Y, Roy VAL, Han ST. Hierarchies in Visual Pathway: Functions and Inspired Artificial Vision. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301986. [PMID: 37435995 DOI: 10.1002/adma.202301986] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 06/28/2023] [Accepted: 07/10/2023] [Indexed: 07/13/2023]
Abstract
The development of artificial intelligence has posed a challenge to machine vision based on conventional complementary metal-oxide semiconductor (CMOS) circuits owing to its high latency and inefficient power consumption originating from the data shuffling between memory and computation units. Gaining more insights into the function of every part of the visual pathway for visual perception can bring the capabilities of machine vision in terms of robustness and generality. Hardware acceleration of more energy-efficient and biorealistic artificial vision highly necessitates neuromorphic devices and circuits that are able to mimic the function of each part of the visual pathway. In this paper, we review the structure and function of the entire class of visual neurons from the retina to the primate visual cortex within reach (Chapter 2) are reviewed. Based on the extraction of biological principles, the recent hardware-implemented visual neurons located in different parts of the visual pathway are discussed in detail in Chapters 3 and 4. Furthermore, valuable applications of inspired artificial vision in different scenarios (Chapter 5) are provided. The functional description of the visual pathway and its inspired neuromorphic devices/circuits are expected to provide valuable insights for the design of next-generation artificial visual perception systems.
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Affiliation(s)
- Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tao Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Qi Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Runze Xu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingrun Qin
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Hong Kong, 999077, P. R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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18
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Li HX, Li QX, Li FZ, Liu JP, Gong GD, Zhang YQ, Leng YB, Sun T, Zhou Y, Han ST. Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308153. [PMID: 37939686 DOI: 10.1002/adma.202308153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 10/25/2023] [Indexed: 11/10/2023]
Abstract
Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration-based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high-performance memristor based on the structure of ITO/Ni single-atoms (NiSAs/N-C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well-distributed trapping sites , small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100 ns, ultralong retention capability of 106 s, a low set voltage (Vset ) of ≈0.7 V, a substantial ON/OFF ration of 103 , and low spatial variation in cycle-to-cycle (500 cycles) and device-to-device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic-based combinational memristor array to realize the one-bit full adder is further implemented.
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Affiliation(s)
- Hua-Xin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Qing-Xiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fu-Zhi Li
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Jia-Peng Liu
- School of Advanced Energy, Sun Yat-Sen University, Shenzhen, 518107, P. R. China
| | - Guo-Dong Gong
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Qi Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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19
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Ren SG, Dong AW, Yang L, Xue YB, Li JC, Yu YJ, Zhou HJ, Zuo WB, Li Y, Cheng WM, Miao XS. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307218. [PMID: 37972344 DOI: 10.1002/adma.202307218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/13/2023] [Indexed: 11/19/2023]
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Affiliation(s)
- Sheng-Guang Ren
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - A-Wei Dong
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ling Yang
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi-Bai Xue
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jian-Cong Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yin-Jie Yu
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hou-Ji Zhou
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Bin Zuo
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Wei-Ming Cheng
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Xiang-Shui Miao
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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20
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Zhou G, Li J, Song Q, Wang L, Ren Z, Sun B, Hu X, Wang W, Xu G, Chen X, Cheng L, Zhou F, Duan S. Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing. Nat Commun 2023; 14:8489. [PMID: 38123562 PMCID: PMC10733375 DOI: 10.1038/s41467-023-43944-2] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 11/22/2023] [Indexed: 12/23/2023] Open
Abstract
In-sensor and near-sensor computing are becoming the next-generation computing paradigm for high-density and low-power sensory processing. To fulfil a high-density and efficient neuromorphic visual system with fully hierarchical emulation of the retina and visual cortex, emerging multimodal neuromorphic devices for multi-stage processing and a fully hardware-implemented system with versatile image processing functions are still lacking and highly desirable. Here we demonstrate an emerging multimodal-multifunctional resistive random-access memory (RRAM) device array based on modified silk fibroin protein (MSFP), exhibiting both optoelectronic RRAM (ORRAM) mode featured by unique negative and positive photoconductance memory and electrical RRAM (ERRAM) mode featured by analogue resistive switching. A full hardware implementation of the artificial visual system with versatile image processing functions is realised for the first time, including ORRAM mode array for the in-sensor image pre-processing (contrast enhancement, background denoising, feature extraction) and ERRAM mode array for near-sensor high-level image recognition, which hugely improves the integration density, and simply the circuit design and the fabrication and integration complexity.
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Affiliation(s)
- Guangdong Zhou
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Jie Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qunliang Song
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Lidan Wang
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Zhijun Ren
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Bai Sun
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Shanxi, 710049, China
| | - Xiaofang Hu
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Wenhua Wang
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Gaobo Xu
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Xiaodie Chen
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Lan Cheng
- State Key Laboratory of Silkworm Genome, College of Sericulture, Textile and Biomass Sciences, Southwest University, Chongqing, 400715, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Shukai Duan
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China.
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21
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Huang PY, Jiang BY, Chen HJ, Xu JY, Wang K, Zhu CY, Hu XY, Li D, Zhen L, Zhou FC, Qin JK, Xu CY. Neuro-inspired optical sensor array for high-accuracy static image recognition and dynamic trace extraction. Nat Commun 2023; 14:6736. [PMID: 37872169 PMCID: PMC10593955 DOI: 10.1038/s41467-023-42488-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Accepted: 10/12/2023] [Indexed: 10/25/2023] Open
Abstract
Neuro-inspired vision systems hold great promise to address the growing demands of mass data processing for edge computing, a distributed framework that brings computation and data storage closer to the sources of data. In addition to the capability of static image sensing and processing, the hardware implementation of a neuro-inspired vision system also requires the fulfilment of detecting and recognizing moving targets. Here, we demonstrated a neuro-inspired optical sensor based on two-dimensional NbS2/MoS2 hybrid films, which featured remarkable photo-induced conductance plasticity and low electrical energy consumption. A neuro-inspired optical sensor array with 10 × 10 NbS2/MoS2 phototransistors enabled highly integrated functions of sensing, memory, and contrast enhancement capabilities for static images, which benefits convolutional neural network (CNN) with a high image recognition accuracy. More importantly, in-sensor trajectory registration of moving light spots was experimentally implemented such that the post-processing could yield a high restoration accuracy. Our neuro-inspired optical sensor array could provide a fascinating platform for the implementation of high-performance artificial vision systems.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Bi-Yi Jiang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Hong-Ji Chen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Jia-Yi Xu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kang Wang
- Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Xin-Yan Hu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Liang Zhen
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Fei-Chi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China.
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22
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Zeng T, Wang Z, Lin Y, Cheng Y, Shan X, Tao Y, Zhao X, Xu H, Liu Y. Doppler Frequency-Shift Information Processing in WO x -Based Memristive Synapse for Auditory Motion Perception. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300030. [PMID: 36862024 PMCID: PMC10161103 DOI: 10.1002/advs.202300030] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 02/10/2023] [Indexed: 05/06/2023]
Abstract
Auditory motion perception is one crucial capability to decode and discriminate the spatiotemporal information for neuromorphic auditory systems. Doppler frequency-shift feature and interaural time difference (ITD) are two fundamental cues of auditory information processing. In this work, the functions of azimuth detection and velocity detection, as the typical auditory motion perception, are demonstrated in a WOx -based memristive synapse. The WOx memristor presents both the volatile mode (M1) and semi-nonvolatile mode (M2), which are capable of implementing the high-pass filtering and processing the spike trains with a relative timing and frequency shift. In particular, the Doppler frequency-shift information processing for velocity detection is emulated in the WOx memristor based auditory system for the first time, which relies on a scheme of triplet spike-timing-dependent-plasticity in the memristor. These results provide new opportunities for the mimicry of auditory motion perception and enable the auditory sensory system to be applied in future neuromorphic sensing.
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Affiliation(s)
- Tao Zeng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - YanKun Cheng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
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23
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Fu J, Wang J, He X, Ming J, Wang L, Wang Y, Shao H, Zheng C, Xie L, Ling H. Pseudo-transistors for emerging neuromorphic electronics. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2180286. [PMID: 36970452 PMCID: PMC10035954 DOI: 10.1080/14686996.2023.2180286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 01/15/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
Artificial synaptic devices are the cornerstone of neuromorphic electronics. The development of new artificial synaptic devices and the simulation of biological synaptic computational functions are important tasks in the field of neuromorphic electronics. Although two-terminal memristors and three-terminal synaptic transistors have exhibited significant capabilities in the artificial synapse, more stable devices and simpler integration are needed in practical applications. Combining the configuration advantages of memristors and transistors, a novel pseudo-transistor is proposed. Here, recent advances in the development of pseudo-transistor-based neuromorphic electronics in recent years are reviewed. The working mechanisms, device structures and materials of three typical pseudo-transistors, including tunneling random access memory (TRAM), memflash and memtransistor, are comprehensively discussed. Finally, the future development and challenges in this field are emphasized.
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Affiliation(s)
- Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jie Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - He Shao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Chaoyue Zheng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China
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24
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Spike timing-dependent plasticity and memory. Curr Opin Neurobiol 2023; 80:102707. [PMID: 36924615 DOI: 10.1016/j.conb.2023.102707] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Revised: 01/18/2023] [Accepted: 02/15/2023] [Indexed: 03/16/2023]
Abstract
Spike timing-dependent plasticity (STDP) is a bidirectional form of synaptic plasticity discovered about 30 years ago and based on the relative timing of pre- and post-synaptic spiking activity with a millisecond precision. STDP is thought to be involved in the formation of memory but the millisecond-precision spike-timing required for STDP is difficult to reconcile with the much slower timescales of behavioral learning. This review therefore aims to expose and discuss recent findings about i) the multiple STDP learning rules at both excitatory and inhibitory synapses in vitro, ii) the contribution of STDP-like synaptic plasticity in the formation of memory in vivo and iii) the implementation of STDP rules in artificial neural networks and memristive devices.
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25
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A bioinspired flexible neuromuscular system based thermal-annealing-free perovskite with passivation. Nat Commun 2022; 13:7427. [PMID: 36460638 PMCID: PMC9718817 DOI: 10.1038/s41467-022-35092-w] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 11/17/2022] [Indexed: 12/04/2022] Open
Abstract
Brain-inspired electronics require artificial synapses that have ultra-low energy consumption, high operating speed, and stable flexibility. Here, we demonstrate a flexible artificial synapse that uses a rapidly crystallized perovskite layer at room temperature. The device achieves a series of synaptic functions, including logical operations, temporal and spatial rules, and associative learning. Passivation using phenethyl-ammonium iodide eliminated defects and charge traps to reduce the energy consumption to 13.5 aJ per synaptic event, which is the world record for two-terminal artificial synapses. At this ultralow energy consumption, the device achieves ultrafast response frequency of up to 4.17 MHz; which is orders of magnitude magnitudes higher than previous perovskite artificial synapses. A multi-stimulus accumulative artificial neuromuscular system was then fabricated using the perovskite synapse as a key processing unit to control electrochemical artificial muscles, and realized muscular-fatigue warning. This artificial synapse will have applications in future bio-inspired electronics and neurorobots.
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