Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity

Quasi-One-Dimensional Ta2PdSe6 with Strong Topological Surface States for High-Performance and Polarization-Sensitive Terahertz Detection

Topological surface states (TSS) in certain low-dimensional materials impart gapless band structure, massless quasiparticles, and nonlinear optical behavior, enabling distinct advantages for applications in low-energy photon detection. Herein, we develop a quasi-one-dimensional (quasi-1D) transition metal chalcogenide material, Ta2PdSe6, with robust TSS, which exhibits a gapless band structure protected by spin-momentum locking and time-reversal symmetry, alongside exceptional transport properties, including a high carrier mobility exceeding 104 cm2·V-1·s-1. The quasi-1D chain-like structure induces pronounced anisotropy and significantly reduces carrier scattering, further enhancing transport efficiency. Benefiting from these unique characteristics, the Ta2PdSe6-based terahertz (THz) detectors demonstrate outstanding performance with responsivity exceeding 3.63 A·W-1, a noise equivalent power of 7.4 pW·Hz-1/2 at 0.28 THz, ultrafast response speed of 1.15 μs, and an exceptional photocurrent anisotropic ratio of 68.3. These findings highlight the significant potential of strong TSS in emerging materials to achieve high-performance and multifunctional THz detection.

A Flexible Dual-Mode Photodetector for Human-Machine Collaborative IR Imaging

Photothermoelectric (PTE) photodetectors with self-powered and uncooled advantages have attracted much interest due to the wide application prospects in the military and civilian fields. However, traditional PTE photodetectors lack of mechanical flexibility and cannot operate independently without the test instrument. Herein, we present a flexible PTE photodetector capable of dual-mode output, combining electrical and optical signal generation for enhanced functionality. Using solution processing, high-quality MXene thin films are assembled on asymmetric electrodes as the photosensitive layer. The geometrically asymmetric electrode design significantly enhances the responsivity, achieving 0.33 mA W-1 under infrared illumination, twice that of the symmetrical configuration. This improvement stems from optimized photothermal conversion and an expanded temperature gradient. The PTE device maintains stable performance after 300 bending cycles, demonstrating excellent flexibility. A new energy conversion pathway has been established by coupling the photothermal conversion of MXene with thermochromic composite materials, leading to a real-time visualization of invisible infrared radiation. Leveraging this functionality, we demonstrate the first human-machine collaborative infrared imaging system, wherein the dual-mode photodetector arrays synchronously generate human-readable pattern and machine-readable pattern. Our study not only provides a new solution for functional integration of flexible photodetectors, but also sets a new benchmark for human-machine collaborative optoelectronics.

Tunable Drift-Diffusion Synergy in Suspended Te Nanowires for Multistate Photodetection

Tuning the interplay between photoconductive (drift-driven) transport and photothermoelectric (diffusion-driven) transport in a single device remains crucial for next-generation optoelectronics and in-sensor computing. Here, we present a suspended tellurium nanowire (Te NW) photodetector that concurrently harnesses and actively balances these two transports using asymmetric (local) or symmetric (flood) illumination in tandem with a bias voltage. This enables on-demand transitions from diffusion-dominated to drift-dominated photoresponses at room temperature, a feat not realized in prior Te-based detectors. Under zero bias with local illumination, robust photothermoelectric diffusion yields positive or negative photocurrents, with a responsivity Ri of 124.28 A/W and specific detectivity (D*) of 7.80 × 1011 Jones. Conversely, flood illumination under finite bias triggers photoconductive drift, with a peak responsivity Ri of 65.03-68.79 A/W and D* of 7.99 × 1010-8.47 × 1010 Jones. By programming the illumination and bias conditions, we realize positive, negative, or zero photocurrent states, forming a three-mode response platform. Remarkably, the device exhibits a sub-100 μs response time and retains stable detection under ambient conditions, illustrating its viability for real-world applications. This work establishes a versatile blueprint for broadband, multistate photodetection toward in-sensor computing tasks.

Rotation-Symmetry Grating Contact Photodetector for Visible Full Linear Polarimetry Detection

Integrated linearly polarized (LP) light detectors hold importance for next-generation optoelectronic systems. However, current compact LP photodetectors relying on the scalar anisotropic absorption of natural materials or the bipolar polarization photoresponse of artificial structures are usually unable to achieve full polarization angle detection or are restricted to the long-infrared waveband. Here, we report a photodetector by integrating InSe flakes with three-fold rotation-symmetry grating contacts for zero-bias full linear polarimetry detection. The photodetector creates an asymmetric junction interface driven by the polarization-dependent propagating surface plasmon polariton wave, generating a zero-bias bipolar polarization photoresponse. By direct measurement of the photocurrents, linear polarization angle and incident power intensity detection can be achieved in a single device at 633 nm. Moreover, we demonstrate the decoding of polarization-angle-encrypted information, showing the great potential of the proposed devices in polarization information processing. Our work offers a promising strategy for developing compact full linear polarimetry photodetectors.

Buried Grating Enables Fast Response Self-Powered Polarization-Sensitive Perovskite Photodetectors for High-Speed Optical Communication and Polarization Imaging

Polarization-sensitive perovskite photodetectors (PSPPDs) have demonstrated great potential for acquiring multidimensional data in remote sensing, security, and optical communication fields. However, requirements of external power supplies and polarization systems, slow response, and poor long-term stability restrict PSPPDs' further development. Herein, a self-powered PSPPD with buried grating structures induced by ultrafast laser direct writing is designed. Remarkably, polarization detection can be achieved without the assistance of conventional optical and mechanical structures. The buried grating structure can reduce light reflection through grating diffraction, facilitating light convergence and enhancing light trapping within the active layer of the PSPPD. As expected, the PSPPD exhibits excellent external quantum efficiency (532 nm, 0 V bias), responsivity (532 nm, 0 V bias), and dark current values of 93.93%, 403 mA W-1, and 5.95 × 10-10 A, respectively. Notably, the raising/falling time is less than 2 µs, which is one of the shortest response times among PSPPDs with grating structures to the best of this knowledge. Moreover, after 120 days of air exposure, the manufactured PSPPDs remain highly effective in fast optical communications, manifesting their exciting potential to produce reliable, high-performance devices economically and efficiently for future applications.

Chalcogenide Metasurfaces Enabling Ultra-Wideband Detectors From Visible to Mid-infrared

Thermoelectric materials can be designed to support optical resonances across multiple spectral ranges to enable ultra-wideband photodetection. For instance, antimony telluride (Sb2Te3) chalcogenide exhibits interband plasmonic resonances in the visible range and Mie resonances in the mid-infrared (mid-IR) range, while simultaneously possessing large thermoelectric Seebeck coefficients of 178 µV K-1. However, chalcogenide metasurfaces for achieving miniaturized and wavelength-sensitive ultra-wideband detectors have not been explored so far, especially with a single material platform. In this paper, Sb2Te3 metasurface devices are designed and fabricated to achieve ≈97% resonant absorption for enabling photodetectors operating across an ultra-wideband spectrum, from visible to mid-IR. Furthermore, relying on linear polarization-sensitive Sb2Te3 metasurface, the thermoelectric photodetectors with linear polarization-selectivity are demonstrated. This work provides a potential platform toward the portable ultrawide band spectrometers without requiring cryogenic cooling, for environmental sensing applications.

Uncooled near- to long-wave-infrared polarization-sensitive photodetectors based on MoSe2/PdSe2 van der Waals heterostructures

Infrared polarization-sensitive photodetectors have attracted considerable interest for night vision, remote sensing and imaging applications. Traditional bulk infrared photodetectors suffer from integration challenges and high-power consumption induced by the cryogenic cooling requirement. Here, we demonstrate a tunneling-dominant triple-junction broadband polarization-sensitive photodetector based on a van der Waals heterostructure, operating from the near-infrared (NIR) to the long-wave infrared (LWIR) band. The device exhibits low noise current, low power consumption and high detectivity. Benefiting from the photogating-assisted tunneling, it reaches a responsivity of ~ 8 × 104 A/W and a response speed of 590 ns under NIR illumination. Apparent blackbody response and high photoresponse up to 10.6 μm is achieved with a room temperature responsivity and detectivity of 0.47 A/W and over 109 Jones. Remarkably, bias-tunable polarization detection capability and high polarization ratios are observed from NIR to LWIR, which further boost target detection and imaging capabilities. Our results offer a promising approach for multidimensional imaging applications and device miniaturization.

Emerging Thermal Detectors Based on Low-Dimensional Materials: Strategies and Progress

Thermal detectors, owing to their broadband spectral response and ambient operating temperature capabilities, represent a key technological avenue for surpassing the inherent limitations of traditional photon detectors. A fundamental trade-off exists between the thermal properties and the response performance of conventional thermosensitive materials (e.g., vanadium oxide and amorphous silicon), significantly hindering the simultaneous enhancement of device sensitivity and response speed. Recently, low-dimensional materials, with their atomically thin thickness leading to ultralow thermal capacitance and tunable thermoelectric properties, have emerged as a promising perspective for addressing these bottlenecks. Integrating low-dimensional materials with metasurfaces enables the utilization of subwavelength periodic configurations and localized electromagnetic field enhancements. This not only overcomes the limitation of low light absorption efficiency in thermal detectors based on low-dimensional materials (TDLMs) but also imparts full Stokes polarization detection capability, thus offering a paradigm shift towards multidimensional light field sensing. This review systematically elucidates the working principle and device architecture of TDLMs. Subsequently, it reviews recent research advancements in this field, delving into the unique advantages of metasurface design in terms of light localization and interfacial heat transfer optimization. Furthermore, it summarizes the cutting-edge applications of TDLMs in wideband communication, flexible sensing, and multidimensional photodetection. Finally, it analyzes the major challenges confronting TDLMs and provides an outlook on their future development prospects.

Centimeter-size achromatic metalens in long-wave infrared

Metalens has shown its significantly ultra-light and ultra-thin features. However, large-aperture achromatic metalens is constrained by both maximum dispersion range and computational memory. Here, we propose a fully device optimizing framework that engineers phase dispersion and amplitude transmittance to create centimeter-size achromatic metalens operating in long-wave infrared regime (8-12 μm). Via wrapping group delay within a defined range and optimizing dispersion phase of desired wavelengths, chromatic aberrations can be effectively corrected. We verify our design by characterizing all-silicon 3.18-cm-diameter and 6.36-cm-diameter LWIR achromatic metalenses. Diffraction-limited tight-focusing can be achieved, and the normalized focal length shift is less than 3.3 × 10-4. Thermal imaging performance is verified on targets of holes or letters with a diameter or line width exceeding 2 mm. These findings facilitate the development of large-aperture achromatic metalenses and open up possibilities for lightweight imaging systems in long-wave infrared.

On-Chip Metamaterial-Enhanced Mid-Infrared Photodetectors with Built-In Encryption Features

The integration of mid-infrared (MIR) photodetectors with built-in encryption capabilities holds immense promise for advancing secure communications in decentralized networks and compact sensing systems. However, achieving high sensitivity, self-powered operation, and reliable performance at room temperature within a miniaturized form factor remains a formidable challenge, largely due to constraints in MIR light absorption and the intricacies of embedding encryption at the device level. Here, a novel on-chip metamaterial-enhanced, 2D tantalum nickel selenide (Ta₂NiSe₅)-based photodetector, meticulously designed with a custom-engineered plasmonic resonance microstructure to achieve self-powered photodetection in the nanoampere range is unveiled. Gold cross-shaped resonators are demonstrated that generate plasmon-induced ultrahot electrons, significantly enhancing the absorption of MIR photons with energies far below the bandgap and boosting electron thermalization in Ta₂NiSe₅, yielding a 0.1 V bias responsivity of 47 mA/W-an order of magnitude higher than previously reported values. Furthermore, the implementation of six reconfigurable optoelectronic logic computing ("AND", "OR", "NAND", "NOR", "XOR", and "XNOR") are illustrated via tailored optical and electrical input-output configurations, thereby establishing a platform for real-time infrared-encrypted communication. This work pioneers a new direction in secure MIR communications, advancing the development of high-performance, encryption-capable photonic systems.

Ultrasensitive photoelectric detection with room temperature extremum

Room-temperature photodetection holds pivotal significance in diverse applications such as sensing, imaging, telecommunications, and environmental remote sensing due to its simplicity, versatility, and indispensability. Although different kinds of photon and thermal detectors have been realized, high sensitivity of photodetection with room temperature extremum is not reported until now. Herein, we find evident peaks in the photoelectric response originated from the anomalous excitonic insulator phase transition in tantalum nickel selenide (Ta2NiSe5) for room-temperature optimized photodetection from visible light to terahertz ranges. Extreme sensitivity of photoconductive detector with specific detectivity (D*) of 5.3 × 1011 cm·Hz1/2·W-1 and electrical bandwidth of 360 kHz is reached in the terahertz range, which is one to two orders of magnitude improvement compared to that of the state-of-the-art room-temperature terahertz detectors. The van der Waals heterostructure of Ta2NiSe5/WS2 is further constructed to suppress the dark current at room temperature with much improved ambient D* of 4.1 × 1012 cm·Hz1/2·W-1 in the visible wavelength, rivaling that of the typical photodetectors, and superior photoelectric performance in the terahertz range compared to the photoconductor device. Our results open a new avenue for optoelectronics via excitonic insulator phase transition in broad wavelength bands and pave the way for applications in sensitive environmental and remote sensing at room temperature.

Lensless Polarimetric Imaging and Encryption Enabled by Te/ReSe2 van der Waals Heterostructure Polarization-Sensitive Photodetector

Polarimetric imaging and encryption improve target recognition precision and information security, enhancing image sensors' perceptual acuity and interference resilience. However, the miniaturization of sensing systems faces challenges due to the complex integration of dispersive optical components such as polarizers. To address this, we propose a polarization-sensitive photodetector using a Te/ReSe2 van der Waals heterostructure. This design leverages type-II band alignment for efficient photocarrier segregation. The anisotropic crystal orientations of ReSe2 and Te layers integrate photon absorption with photocarrier extraction, boosting the functionality. The Te/ReSe2 device offers a broad spectral photoresponse (300-965 nm), a high polarization ratio of 8.9, and a fast response time of 55.4/55.7 μs at 635 nm. These properties enable high-resolution polarimetric imaging and precise image processing. This study provides a blueprint for developing miniaturized polarization-sensitive photodetectors and advancing lensless polarimetric optoelectronics.

Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision

Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors, which requires a substantial amount of space and manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based on two-dimensional (2D) materials with low-symmetry crystal structures, they are limited by the intrinsic anisotropic property and thus the optional range of materials, the operation wavelength, and more importantly, the low anisotropic ratio, hindering their practical applications. In this work, we construct a versatile platform that transcends the constraints of material anisotropy, by integrating WSe2-based photodetector with MoS2-based field-effect transistor, delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio. The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band, reaching the level of existing applications. Meanwhile, the system achieves a significant improvement in photosensitivity, with an on/off ratio of over 103 in the IR band. Based on the above performance optimization, we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of ~99%. The proposed platform provides a promising route for the development of the long-sought minimized, high-performance, multifunctional optoelectronic systems.

β-Ga2O3 Nanoribbon with Ultra-High Solar-Blind Ultraviolet Polarization Ratio

Solar-blind ultraviolet (UV) detection plays a critical role in imaging and communication due to its low-noise background, high signal-to-noise ratio, and strong anti-interference capabilities. Detecting the polarization state of UV light can enhance image information and expand the communication dimension. Although polarization detection is explored in visible and infrared light, and applied in fields such as astrophysics and submarine seismic wave detection, solar-blind UV polarization detection remains largely unreported. This is primarily due to the challenge of creating UV polarizers with high transmittance, high extinction ratio, and strong resistance to UV radiation. In this study, it is discovered that the space symmetry breaking of the β-Ga2O3's b-c plane results in a significant optical absorption dichroic ratio. Leveraging β-Ga2O3's high solar-blind UV response, a lensless solar-blind UV polarization-sensitive photodetector, circumventing the challenges associated with solar-blind UV polarizers is designed. This photodetector exhibits an exceptionally high intrinsic polarization ratio under 254 nm linearly polarized light, approximately two orders of magnitude higher than other reported nanomaterial-based polarization-sensitive photodetectors. Additionally, it demonstrates significant advantages in solar-blind UV imaging and light communication. This work introduces a novel strategy for solar-blind ultraviolet polarization detection and offers a promising approach for solar-blind light communication.

High-Sensitive Uncooled Mid-Wave Infrared Detector Based on TiS3 Nanoribbon

High-sensitive uncooled mid-wave infrared (MWIR) photodetection with fast speed is highly desired for biomedical imaging, optical communication, and night vision technology. Low-dimensional materials with low dark current and broadband photoresponse hold great promise for use in MWIR detection. Here, this study reports a high-performance MWIR photodetector based on a titanium trisulfide (TiS3) nanoribbon. This device demonstrates an ultra-broadband photoresponse ranging from the visible spectrum to the MWIR spectrum (405-4275 nm). In the MWIR spectral range, the photodetector achieves competitive high photoresponsivity (R) of 21.1 A W-1, and an impressive specific detectivity (D*) of 5.9 × 1010 cmHz1/2 W-1 in ambient air. Remarkably, the photoresponse speed in the MWIR with τr = 1.3 ms and τd = 1.5 ms is realized which is much faster than the thermal time constant of 15 ms. These findings pave the way for highly sensitive, room-temperature MWIR photodetectors with exceptionally fast response speed.

Electronics and Optoelectronics Based on Tellurium

As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

Low-Symmetry Van der Waals Dielectric GaInS3 Triggered 2D MoS2 Giant Anisotropy via Symmetry Engineering

Low-symmetry structures in van der Waals materials have facilitated the advancement of anisotropic electronic and optoelectronic devices. However, the intrinsic low symmetry structure exhibits a small adjustable anisotropy ratio (1-10), which hinders its further assembly and processing into high-performance devices. Here, a novel 2D anisotropic dielectric, GaInS3 (GIS), which induces isotropic MoS2 to exhibit significant anisotropic optical and electrical responses is demonstrated. With the excellent gate modulation ability of 2D GIS (dielectric constant k ∼12), MoS2 field effect transistor (FET) shows an adjustable conductance ratio from isotropic to anisotropic under dual-gate modulation, up to 106. Theoretical calculations indicate that anisotropy originates from lattice mismatch-induced charge density deformation at the interface. Moreover, the MoS2/GIS photodetector demonstrates high responsivity (≈4750 A W-1) and a large dichroic ratio (≈167). The anisotropic van der Waals dielectric GIS paves the way for the development of 2D transition metal dichalcogenides (TMDCs) in the fields of anisotropic photonics, electronics, and optoelectronics.

Near-Infrared Polarization-Sensitive Detection by All-Si Plasmonic Hot Electron Detectors

Polarization-sensitive optoelectronic detection has been achieved by an all-Si detector in the NIR range, based on plasmon hot electron generation/internal photoemission effect. An advanced architecture with a specially designed anisotropic metasurface was developed and structurally optimized for maximizing the internal quantum efficiency (IQE). Assisted by finite difference time domain (FDTD) simulations, the well-designed device exhibits a maximum optical absorption of 80% around 1.45 μm, corresponding to an optical discrimination ratio of 120. Optoelectronic measurements show the peak responsivity and detectivity of 51.2 mA/W and 8.05 × 1010 cm Hz1/2/W, respectively, at 1.45 μm. A high polarization photocurrent ratio of 35 nm is also achieved at 1.55 μm. Moreover, the optoelectronic response can be tuned by a back-gate bias. Last but not least, we built up a model for theoretically estimating the IQE, which provides instructive guidance for further enhancing the optoelectronic performance of hot electron detectors.

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Advances in symmetry-breaking engineering of heterointerfaces for optoelectronic devices have garnered significant attention due to their immense potential in tunable moiré quantum geometry and enabling polarization light detection. Despite several proposed approaches to breaking the symmetry of low-dimensional materials, there remains a lack of universal methods to create materials with prominent polarization detection capabilities. Here, we introduce a reliable strategy for manipulating the symmetry of low-dimensional materials through a programmable ferroelectric-doping patterns technique. This method introduces a spontaneous photocurrent and enables the detection of linearly polarization light in isotropic 2H-MoTe2. The 2H-MoTe2 photodetector exhibits a significant short-circuit photocurrent intensity (Jsc = 29.9 A/cm2) and open-circuit voltage Voc of 0.12 V ( ~ 3 × 105 V/cm). Under a specific bias, the polarization ratio transitions from 1 to ∞/-∞, shifting from a positive state (unipolar regime) to a negative state (bipolar regime). These findings underscore the potential of ferroelectric-doping patterns as a promising approach to creating composite materials with artificial bulk photovoltaic effect and achieving high-performance polarization light detection.

All-in-One 2D Molecular Crystal Optoelectronic Synapse for Polarization-Sensitive Neuromorphic Visual System

Neuromorphic visual systems (NVSs) hold the potential to not only preserve but also enhance human visual capabilities. One such augmentation lies in harnessing polarization information from light reflected or scattered off surfaces like bees, which can disclose unique characteristics imperceptible to the human eyes. While creating polarization-sensitive optoelectronic synapses presents an intriguing avenue for equipping NVS with this capability, integrating functions like polarization sensitivity, photodetection, and synaptic operations into a singular device has proven challenging. This integration typically necessitates distinct functional components for each performance metric, leading to intricate fabrication processes and constraining overall performance. Herein, a pioneering linear polarized light sensitive synaptic organic phototransistor (OPT) based on 2D molecular crystals (2DMCs) with highly integrated, all-in-one functionality, is demonstrated. By leveraging the superior crystallinity and molecular thinness of 2DMC, the synaptic OPT exhibits comprehensive superior performance, including a linear dichroic ratio up to 3.85, a high responsivity of 1.47 × 104 A W-1, and the adept emulation of biological synapse functions. A sophisticated application in noncontact fingerprint detection achieves a 99.8% recognition accuracy, further highlights its potential. The all-in-one 2DMC optoelectronic synapse for polarization-sensitive NVS marks a new era for intelligent perception systems.

Ultrafast near-infrared pyroelectric detector based on inhomogeneous plasmonic metasurface

Pyroelectric (PE) detection technologies have attracted extensive attention due to the cooling-free, bias-free, and broadband properties. However, the PE signals are generated by the continuous energy conversion processes from light, heat, to electricity, normally leading to very slow response speeds. Herein, we design and fabricate a PE detector which shows extremely fast response in near-infrared (NIR) band by combining with the inhomogeneous plasmonic metasurface. The plasmonic effect dramatically accelerates the light-heat conversion process, unprecedentedly improving the NIR response speed by 2-4 orders of magnitude to 22 μs, faster than any reported infrared (IR) PE detector. We also innovatively introduce the concept of time resolution into the field of PE detection, which represents the detector's ability to distinguish multiple fast-moving targets. Furthermore, the spatially inhomogeneous design overcomes the traditional narrowband constraint of plasmonic systems and thus ensures a wideband response from visible to NIR. This study provides a promising approach to develop next-generation IR PE detectors with ultrafast and broadband responses.

In-Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition

Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in-sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/-∞→-1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.

Infrared photodetectors based on wide bandgap two-dimensional transition metal dichalcogenides via efficient two-photon absorption

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their outstanding optoelectronic properties and ease of integration, making them ideal candidates for high-performance photodetectors. However, the excessive width of the bandgap in some 2D TMDs presents a challenge for achieving infrared photodetection. One approach to broaden the photoresponse wavelength range of TMDs is through the utilization of two-photon absorption (TPA) process. Unfortunately, the inefficiency of TPA hinders its application in infrared photodetection. In this study, we propose the design of two photodetectors utilizing high TPA coefficient materials, specifically ReSe2and MoS2, to exploit their TPA capability and extend the photoresponse to the near-infrared region at 1550 nm. The ReSe2photodetector demonstrates an unprecedented responsivity of 43μA W-1, surpassing that of current single-material TPA photodetectors. Similarly, the MoS2photodetector achieves a responsivity of 18μA W-1, comparable to state-of-the-art TPA photodetectors. This research establishes the potential of high TPA coefficient 2D TMDs for infrared photodetection.

Enhanced photothermoelectric conversion in self-rolled tellurium photodetector with geometry-induced energy localization

Photodetection has attracted significant attention for information transmission. While the implementation relies primarily on the photonic detectors, they are predominantly constrained by the intrinsic bandgap of active materials. On the other hand, photothermoelectric (PTE) detectors have garnered substantial research interest for their promising capabilities in broadband detection, owing to the self-driven photovoltages induced by the temperature differences. To get higher performances, it is crucial to localize light and heat energies for efficient conversion. However, there is limited research on the energy conversion in PTE detectors at micro/nano scale. In this study, we have achieved a two-order-of-magnitude enhancement in photovoltage responsivity in the self-rolled tubular tellurium (Te) photodetector with PTE effect. Under illumination, the tubular device demonstrates a maximum photovoltage responsivity of 252.13 V W-1 and a large detectivity of 1.48 × 1011 Jones. We disclose the mechanism of the PTE conversion in the tubular structure with the assistance of theoretical simulation. In addition, the device exhibits excellent performances in wide-angle and polarization-dependent detection. This work presents an approach to remarkably improve the performance of photodetector by concentrating light and corresponding heat generated, and the proposed self-rolled devices thus hold remarkable promises for next-generation on-chip photodetection.

On-chip photodetection of angular momentums of vortex structured light

Structured vortex light with orbital angular momentum (OAM) shows great promise for high-bandwidth optical communications, quantum information and computing, optical tweezers, microscopy, astronomy, among others. Generating, controlling, and detecting of vortex light by all-electrical means is at the heart of next generation nanophotonic platforms. However, on-chip electrical photodetection of structured vortex light remains challenging. Here, we propose an on-chip photodetector based on 2D broadband thermoelectric material (PdSe2) with a well-designed spin-Hall couplers to directly characterize angular momentum modes of vortex structured light. Photothermoelectric responses in the PdSe2 nanoflake, excited by the focusing surface plasmons, show a magnitude proportional to the total angular momentum modes of the infrared vortex beams, thereby achieving direct detection of spin and orbital angular momentum, as well as the chirality and ellipticity of scalar vortex lights. Our works provide a promising strategy for developing on-chip angular momentum optoelectronic devices, which play a key role in the next-generation high-capacity optical communications, quantum information and computing, imaging, and other photonic systems.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

Designing high-performance polarization-sensitive photodetectors is essential for photonic device applications. Anisotropic one-dimensional (1D) van der Waals (vdW) materials have provided a promising platform to that end. Despite significant advances in 1D vdW photonic devices, their performance is still far from delivering practical potential. Herein, we propose the design of high-performance polarization-sensitive photodetectors using unique 1D vdW materials. By leveraging the chemical vapor transport technique, we successfully fabricate high-quality 1D vdW Nb2Pd1-xSe5 (x = 0.29) nanowires. The 1D vdW Nb2Pd1-xSe5 photodetector exhibits a high mobility of ∼56 cm2/(V s) and superior photoresponse performance, including a high responsivity of 1A/W and an ultrafast response time of ∼8 μs under 638 nm illumination. Moreover, the 1D vdW Nb2Pd1-xSe5 photodetector demonstrates excellent polarization-sensitive photoresponse with a degree of linear polarization (DOLP) up to 0.85 and can be modulated by adjusting the gate voltage, laser power density, and wavelength. Those exceptional performance are believed to be relevant to the symmetry-reduction induced by the partial occupation of Pd sites. This study offers feasible approaches to enhance the anisotropy of 1D vdW materials and the modulation of their polarization-sensitive photoresponse, which may provide deep insights into the physical origin of anisotropic properties of 1D vdW materials.

Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions

A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.

Highly Sensitive Broadband Polarized Photodetector Based on the As0.6P0.4/WSe2 Heterostructure toward Imaging and Optical Communication Application

Polarization-sensitive photodetectors based on two-dimensional anisotropic materials still encounter the issues of narrow spectral coverage and low polarization sensitivity. To address these obstacles, anisotropic As0.6P0.4 with a narrow band gap has been integrated with WSe2 to construct a type-II heterostructure, realizing a high-performance polarization-sensitive photodetector with broad spectral range from 405 to 2200 nm. By operating in photovoltaic mode at zero bias, the device shows a very low dark current of ∼0.02 picoampere, high responsivity of 492 m A/W, and high photoswitching ratio of 6 × 104, yielding a high specific detectivity of 1.4 × 1012 Jones. The strong in-plane anisotropy of As0.6P0.4 endows the device with a capability of polarization-sensitive detection with a high polarization ratio of 6.85 under a bias voltage. As an image sensor and signal receiver, the device shows great potential in imaging and optical communication applications. This work develops an anisotropic vdW heterojunction to realize polarization-sensitive photodetectors with wide spectral coverage, fast response, and high sensitivity, providing a new candidate for potential applications of polarization-resolved electronics and photonics.

Touchless Thermosensation Enabled by Flexible Infrared Photothermoelectric Detector for Temperature Prewarning Function of Electronic Skin

Artificial skin, endowed with the capability to perceive thermal stimuli without physical contact, will bring innovative interactive experiences into smart robotics and augmented reality. The implementation of touchless thermosensation, responding to both hot and cold stimuli, relies on the construction of a flexible infrared detector operating in the long-wavelength infrared range to capture the spontaneous thermal radiation. This imposes rigorous requirements on the photodetection performance and mechanical flexibility of the detector. Herein, a flexible and wearable infrared detector is presented, on basis of the photothermoelectric coupling of the tellurium-based thermoelectric multilayer film and the infrared-absorbing polyimide substrate. By suppressing the optical reflection loss and aligning the destructive interference position with the absorption peak of polyimide, the fabricated thermopile detector exhibits high sensitivity to the thermal radiation over a broad source temperature range from -50 to 110 °C, even capable of resolving 0.05 °C temperature change. Spatially resolved radiation distribution sensing is also achieved by constructing an integrated thermopile array. Furthermore, an established temperature prewarning system is demonstrated for soft robotic gripper, enabling the identification of noxious thermal stimuli in a contactless manner. A feasible strategy is offered here to integrate the infrared detection technique into the sensory modality of electronic skin.

Polarization- and Gate-Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure

Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity (<10), far from market application requirement. Here, the photovoltaic detectors with polarization- and gate-tunable optoelectronic reverse phenomenon are developed based on semimetal 1T'-MoTe2 and ambipolar WSe2 . The device exhibits gate-tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10-2 to 103 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ≈30, which is compelling among the state-of-the-art 2D-based polarized detectors. The sign reversal of polarization-sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/-∞→-1). This work develops a photovoltaic detector with polarization- and gate-tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multifunction integration applications.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

Dynamically Reconfigurable on-Chip Polarimeters Based on Nanoantenna Enabled Polarization Dependent Optoelectronic Computing

On-chip polarization detectors have attracted extensive research interest due to their filterless and ultracompact architecture. However, their polarization-dependent photoresponses cannot be dynamically adjusted, hindering the development toward intelligence. Here, we propose dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependences and tunable responsivities. Such a device can be electrostatically configured in an ultrahigh polarization extinction ratio (PER) mode, where the PER tends to infinity, a Stokes parameter direct sensing mode, where the photoresponse is proportional to S1 or S2 with high accuracy (RMSES1 = 1.5%, RMSES2 = 2.0%), or a background suppressing mode, where the target-background polarization contrast is singularly enhanced. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8 × 105 cm·Hz1/2·W·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range, and it will bring a leap for next-generation on-chip polarimeters.

All-dielectric six-foci metalens for infrared polarization detection based on Stokes space

The detection technology of infrared polarization has gained significant attention due to its ability to provide better identification and obtain more information about the target. In this paper, based on the expression of the full polarization state in Stokes space, we designed micro-nano metasurface functional arrays to calculate the polarization state of the incident light by reading the Stokes parameters (a set of parameters that describe the polarization state). Metalens with linear and circular polarization-dependent functions are designed based on the propagation and geometric phases of the dielectric Si meta-atoms in the infrared band, respectively. The device exhibits a high polarization extinction ratio. The influence of incident angle on polarization-dependent metalens is discussed, and the analysis of incident angle is of great significance for the practical application. An infrared six-foci metalens is proposed, each corresponding to the Poincaré sphere's coordinate component (a graphical polarization state method). By matching the six polarization components of the incident light and the Stokes parameters, the polarization detection function can be realized by calculating the polarization state of the incident light. There is a slight error between the theoretical value and the calculated value of the unit coordinate component of the Stokes parameters. At the same time, the intensity distribution of different incident light polarization azimuth angles and ellipticity angles on the focal plane agrees with the theory. The advantage of the device is that the polarization state of the incident light can be directly calculated without passing through other components. The six-foci metalens have potential applications in polarization detection and imaging, space remote sensing, etc.