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Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
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Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
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Tang Y, Cai Y, Dou K, Chang J, Li W, Wang S, Sun M, Huang B, Liu X, Qiu J, Zhou L, Wu M, Zhang JC. Dynamic multicolor emissions of multimodal phosphors by Mn 2+ trace doping in self-activated CaGa 4O 7. Nat Commun 2024; 15:3209. [PMID: 38615033 PMCID: PMC11016074 DOI: 10.1038/s41467-024-47431-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Accepted: 03/29/2024] [Indexed: 04/15/2024] Open
Abstract
The manipulation of excitation modes and resultant emission colors in luminescent materials holds pivotal importance for encrypting information in anti-counterfeiting applications. Despite considerable achievements in multimodal and multicolor luminescent materials, existing options generally suffer from static monocolor emission under fixed external stimulation, rendering them vulnerability to replication. Achieving dynamic multimodal luminescence within a single material presents a promising yet challenging solution. Here, we report the development of a phosphor exhibiting dynamic multicolor photoluminescence (PL) and photo-thermo-mechanically responsive multimodal emissions through the incorporation of trace Mn2+ ions into a self-activated CaGa4O7 host. The resulting phosphor offers adjustable emission-color changing rates, controllable via re-excitation intervals and photoexcitation powers. Additionally, it demonstrates temperature-induced color reversal and anti-thermal-quenched emission, alongside reproducible elastic mechanoluminescence (ML) characterized by high mechanical durability. Theoretical calculations elucidate electron transfer pathways dominated by intrinsic interstitial defects and vacancies for dynamic multicolor emission. Mn2+ dopants serve a dual role in stabilizing nearby defects and introducing additional defect levels, enabling flexible multi-responsive luminescence. This developed phosphor facilitates evolutionary color/pattern displays in both temporal and spatial dimensions using readily available tools, offering significant promise for dynamic anticounterfeiting displays and multimode sensing applications.
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Affiliation(s)
- Yiqian Tang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Yiyu Cai
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Kunpeng Dou
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Jianqing Chang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Wei Li
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Shanshan Wang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China
| | - Mingzi Sun
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong SAR, China.
| | - Xiaofeng Liu
- College of Optical Science and Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Jianrong Qiu
- College of Optical Science and Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Lei Zhou
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Mingmei Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Jun-Cheng Zhang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao, 266100, China.
- Engineering Research Center of Advanced Marine Physical Instruments and Equipment of Education Ministry of China, and Key Laboratory of Optics and Optoelectronics of Qingdao, Ocean University of China, Qingdao, 266100, China.
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3
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Chen H, Xing Y, Tan H, Huang L, Zheng Q, Huang Z, Han X, Hu B, Ye Y, Li Y, Xiao Y, Lei H, Qiu X, Liu E, Yang H, Wang Z, Yan B, Gao HJ. Atomically precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal. Nat Commun 2024; 15:2301. [PMID: 38485746 PMCID: PMC10940584 DOI: 10.1038/s41467-024-46729-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 03/07/2024] [Indexed: 03/18/2024] Open
Abstract
Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin-orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin-orbit polarons become tunable and eventually become itinerantly negative due to spin-orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.
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Affiliation(s)
- Hui Chen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yuqing Xing
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hengxin Tan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Li Huang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qi Zheng
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zihao Huang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xianghe Han
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Bin Hu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuhan Ye
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yan Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Xiao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, PR China
| | - Xianggang Qiu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Enke Liu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill, MA, 02467, USA
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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4
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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5
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Ngoc HV, Ha CV. C, Ge-doped h-BN quantum dot for nano-optoelectronic applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:195701. [PMID: 38316058 DOI: 10.1088/1361-648x/ad2673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
Emerging materials, particularly nanomaterials, constitute an enduring focal point of scientific inquiry, with quantum dots being of particular interest. This investigation is centered on elucidating the exceptional structural, electromagnetic, and optical characteristics of hexagonal boron nitride (h-BN) quantum dots and h-BN quantum dots doped with carbon (C) and germanium (Ge). The employed methodology in this study hinges on density functional theory coupled with the Vienna Ab initio simulation package. The outcomes of this research unveil the structural stability of hexagonal honeycomb structures upon optimization. Comprehensive examinations encompassing structural properties, electromagnetic characteristics, and charge density variations have been systematically conducted. Furthermore, this work delves into the elucidation of multi-orbital hybridizations that give rise toσbonds andπbonds. Notably, the outcomes of the optical property analysis divulge intriguing observations. Specifically, the absorption coefficient exhibits zero values within select energy ranges within the visible light spectrum, a phenomenon observed in both pristine and C-doped configurations. This discovery underscores the material's optical transparency at these specific radiation energies. Additionally, the 0xand 0ycomponents of the dielectric function display negative values across particular energy ranges, a characteristic that holds significant promise for potential applications in nanotechnology communications, offering minimal energy loss.
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Affiliation(s)
- Hoang Van Ngoc
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Thu Dau Mot, Binh Duong Province, Vietnam
| | - Chu Viet Ha
- Thai Nguyen University of Education, Thai Nguyen City, Thai Nguyen Province, Vietnam
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Chen K, Peng L, Fang Z, Lin X, Sun C, Qiu X. Dispersing boron nitride nanosheets with carboxymethylated cellulose nanofibrils for strong and thermally conductive nanocomposite films with improved water-resistance. Carbohydr Polym 2023; 321:121250. [PMID: 37739515 DOI: 10.1016/j.carbpol.2023.121250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 07/30/2023] [Accepted: 07/31/2023] [Indexed: 09/24/2023]
Abstract
BNNS (boron nitride nanosheets)-CNF (cellulose nanofibrils) nanocomposite films have attracted increasing attention for advanced thermal management applications. However, the nanocomposite films reported so far generally suffer from unsatisfactory overall performance, especially for thermal conductivity and tensile strength. In this work, a nanocomposite film with excellent overall performance was prepared by using CCNF1.2 (carboxymethylated CNF with 1.2 mmol·g-1 carboxyl content) simultaneously as effective dispersant and reinforcement matrix for BNNS. The high aspect ratio of CCNF1.2 is primarily responsible for its excellent dispersion capability for BNNS, which provides strong steric hindrance repulsion force. Meanwhile, CCNF1.2 manifests the strongest hydrophobic-hydrophobic interactions with BNNS, and its carboxyl groups completely interact with the -OH of BNNS by hydrogen bonding. As a result, the BNNS-CCNF1.2 film (50 wt% BNNS) exhibits compacted aligned structure and superior comprehensive performance (125.0 MPa tensile strength, 17.3 W·m-1·K-1 in-plane thermal conductivity, and improved water resistance). This work demonstrates the effectiveness of CCNF in improving the overall performance of BNNS-CNF films and paves the way for their practical application in the advanced thermal management of next-generation electronic devices.
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Affiliation(s)
- Kaihuang Chen
- School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640, Guangdong, PR China
| | - Liyuan Peng
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, Guangdong, PR China
| | - Zhiqiang Fang
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, Guangdong, PR China; Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, Guangdong University of Technology, Panyu District, Guangzhou 510006, PR China.
| | - Xiaoqi Lin
- State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, Guangdong, PR China
| | - Chuan Sun
- School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 510640, Guangdong, PR China
| | - Xueqing Qiu
- School of Chemical Engineering and Light Industry, Guangdong University of Technology, Waihuan Xi Road 100, Guangzhou 510006, PR China; Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, Guangdong University of Technology, Panyu District, Guangzhou 510006, PR China.
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7
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Ali S, Nilsson FA, Manti S, Bertoldo F, Mortensen JJ, Thygesen KS. High-Throughput Search for Triplet Point Defects with Narrow Emission Lines in 2D Materials. ACS NANO 2023; 17:21105-21115. [PMID: 37889165 DOI: 10.1021/acsnano.3c04774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
We employ a first-principles computational workflow to screen for optically accessible, high-spin point defects in wide band gap, two-dimensional (2D) crystals. Starting from an initial set of 5388 point defects, comprising both native and extrinsic, single and double defects in ten previously synthesized 2D host materials, we identify 596 defects with a triplet ground state. For these defects, we calculate the defect formation energy, hyperfine (HF) coupling, and zero-field splitting (ZFS) tensors. For 39 triplet transitions exhibiting particularly low Huang-Rhys factors, we calculate the full photoluminescence (PL) spectrum. Our approach reveals many spin defects with narrow PL line shapes and emission frequencies covering a broad spectral range. Most of the defects are hosted in hexagonal BN (hBN), which we ascribe to its high stiffness, but some are also found in MgI2, MoS2, MgBr2 and CaI2. As specific examples, we propose the defects vSMoS0 and NiSMoS0 in MoS2 as interesting candidates with potential applications to magnetic field sensors and quantum information technology.
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Affiliation(s)
- Sajid Ali
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Fredrik Andreas Nilsson
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Simone Manti
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- INFN, Laboratori Nazionali di Frascati, Via E. Fermi 54, I-00044 Roma, Italy
| | - Fabian Bertoldo
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Jens Jørgen Mortensen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Kristian Sommer Thygesen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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Bui TA, Leuthner GT, Madsen J, Monazam MRA, Chirita AI, Postl A, Mangler C, Kotakoski J, Susi T. Creation of Single Vacancies in hBN with Electron Irradiation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301926. [PMID: 37259696 DOI: 10.1002/smll.202301926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 05/16/2023] [Indexed: 06/02/2023]
Abstract
Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of 2D materials. The displacement cross sections of monolayer hexagonal boron nitride (hBN) are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions, where chemical etching appears to dominate. Notably, it is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for the vibrations of the atoms. A theoretical description is developed to account for the lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modeled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.
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Affiliation(s)
- Thuy An Bui
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Gregor T Leuthner
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Jacob Madsen
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Mohammad R A Monazam
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Alexandru I Chirita
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Andreas Postl
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Clemens Mangler
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Jani Kotakoski
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
| | - Toma Susi
- University of Vienna, Faculty of Physics, Boltzmanngasse 5, Vienna, 1090, Austria
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9
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Kim SH, Park KH, Lee YG, Kang SJ, Park Y, Kim YD. Color Centers in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2344. [PMID: 37630929 PMCID: PMC10458833 DOI: 10.3390/nano13162344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/10/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Affiliation(s)
- Suk Hyun Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Kyeong Ho Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Young Gie Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17101, Republic of Korea;
| | - Yongsup Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
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10
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Liu B, Zhang YT, Qiao R, Shi R, Li Y, Guo Q, Li J, Li X, Wang L, Qi J, Du S, Ren X, Liu K, Gao P, Zhang YY. Tunable Interband Transitions in Twisted h-BN/Graphene Heterostructures. PHYSICAL REVIEW LETTERS 2023; 131:016201. [PMID: 37478456 DOI: 10.1103/physrevlett.131.016201] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 05/08/2023] [Accepted: 06/02/2023] [Indexed: 07/23/2023]
Abstract
In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected transition behaviors, which may influence the device performance. Here, we study the twist-angle-dependent coupling effects of h-BN/graphene heterostructures using monochromatic electron energy loss spectroscopy. We find that the moiré potentials alter the band structure of graphene, resulting in a redshift of the intralayer transition at the M point, which becomes more pronounced up to 0.22 eV with increasing twist angle. Furthermore, the twisting of the Brillouin zone of h-BN relative to the graphene M point leads to tunable vertical transition energies in the range of 5.1-5.6 eV. Our findings indicate that twist-coupling effects of van der Waals heterostructures should be carefully considered in device fabrications, and the continuously tunable interband transitions through the twist angle can serve as a new degree of freedom to design optoelectrical devices.
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Affiliation(s)
- Bingyao Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yu-Tian Zhang
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Ruixi Qiao
- Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Ruochen Shi
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuehui Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jiade Li
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaomei Li
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Li Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shixuan Du
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinguo Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yu-Yang Zhang
- University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049, China
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11
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Dai C, Popple D, Su C, Park JH, Watanabe K, Taniguchi T, Kong J, Zettl A. Evolution of nanopores in hexagonal boron nitride. Commun Chem 2023; 6:108. [PMID: 37277463 DOI: 10.1038/s42004-023-00899-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2022] [Accepted: 05/08/2023] [Indexed: 06/07/2023] Open
Abstract
The engineering of atomically-precise nanopores in two-dimensional materials presents exciting opportunities for both fundamental science studies as well as applications in energy, DNA sequencing, and quantum information technologies. The exceptional chemical and thermal stability of hexagonal boron nitride (h-BN) suggest that exposed h-BN nanopores will retain their atomic structure even when subjected to extended periods of time in gas or liquid environments. Here we employ transmission electron microscopy to examine the time evolution of h-BN nanopores in vacuum and in air and find, even at room temperature, dramatic geometry changes due to atom motion and edge contamination adsorption, for timescales ranging from one hour to one week. The discovery of nanopore evolution contrasts with general expectations and has profound implications for nanopore applications of two-dimensional materials.
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Affiliation(s)
- Chunhui Dai
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoSciences Institute at the University of California at Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Derek Popple
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoSciences Institute at the University of California at Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Chemistry, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Cong Su
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoSciences Institute at the University of California at Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA
| | - Kenji Watanabe
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Kavli Energy NanoSciences Institute at the University of California at Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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12
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Gupta S, Wu W, Huang S, Yakobson BI. Single-Photon Emission from Two-Dimensional Materials, to a Brighter Future. J Phys Chem Lett 2023; 14:3274-3284. [PMID: 36977324 DOI: 10.1021/acs.jpclett.2c03674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Single photons, often called flying qubits, have enormous promise to realize scalable quantum technologies ranging from an unhackable communication network to quantum computers. However, finding an ideal single-photon emitter (SPE) is a great challenge. Recently, two-dimensional (2D) materials have shown great potential as hosts for SPEs that are bright and operate under ambient conditions. This Perspective enumerates the metrics required for an SPE source and highlights that 2D materials, because of reduced dimensionality, exhibit interesting physical effects and satisfy several metrics, making them excellent candidates to host SPEs. The performance of SPE candidates discovered in 2D materials, hexagonal boron nitride and transition metal dichalcogenides, will be assessed based on the metrics, and the remaining challenges will be highlighted. Lastly, strategies to mitigate such challenges by developing design rules to deterministically create SPE sources will be presented.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Wenjing Wu
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
- Smalley-Curl Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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13
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Song J, Cao Y, Dong J, Sun M. Superior Thermoelectric Properties of Twist-Angle Superlattice Borophene Induced by Interlayer Electrons Transport. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2301348. [PMID: 36919623 DOI: 10.1002/smll.202301348] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 02/18/2023] [Indexed: 06/18/2023]
Abstract
In this paper, the energy bands, interlayer interactions and thermoelectric effects of twisted bilayer borophene (TBB) synthesized on Ag (111) are studied theoretically. The results manifest the advantages of twistronics, where the high electrical conductivity and the large Seebeck coefficient are regulated to the same range, which lead to the significantly increase of figure of merit ZT than that of bilayer borophene (BB) without twist, where the BB without twist is successfully synthesized on Ag (111) film is recently experimental report [Nat. Mater. 2022, 21, 35]. For the TBB synthesized of on Ag (111) film, theoretical analysis demonstrates that TBB and Ag are relatively strongly coupled, and TBB becomes a metallic 2D material, where the top and bottom borophene layers are semiconducting and metallic, respectively. TBB exhibits excellent thermoelectric efficiency due to the charge transfer bonding between the layers, less electron localization, and the regulation of Seebeck coefficient, electrical conductivity, and ZT at the same region of chemical potential and the same temperature by twistronics. The structure-property relationship offers the possibility of applying TBB in thermoelectric devices.
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Affiliation(s)
- Jizhe Song
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yi Cao
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Jun Dong
- School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an, 710121, P. R. China
| | - Mengtao Sun
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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14
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Ogawa S, Fukushima S, Shimatani M. Hexagonal Boron Nitride for Photonic Device Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2005. [PMID: 36903116 PMCID: PMC10004243 DOI: 10.3390/ma16052005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Revised: 02/23/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.
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15
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Chang DJ, O'Leary CM, Su C, Jacobs DA, Kahn S, Zettl A, Ciston J, Ercius P, Miao J. Deep-Learning Electron Diffractive Imaging. PHYSICAL REVIEW LETTERS 2023; 130:016101. [PMID: 36669218 DOI: 10.1103/physrevlett.130.016101] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2022] [Revised: 10/07/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
We report the development of deep-learning coherent electron diffractive imaging at subangstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene, and a gold nanoparticle with comparable quality to those reconstructed by a conventional ptychographic algorithm. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a resolution in the range of 0.70 and 0.55 Å. We further develop CNNs to recover the probe function from the experimental data. The ability to replace iterative algorithms with CNNs and perform real-time atomic imaging from coherent diffraction patterns is expected to find applications in the physical and biological sciences.
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Affiliation(s)
- Dillan J Chang
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
| | - Colum M O'Leary
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
| | - Cong Su
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, California 94720, USA
| | - Daniel A Jacobs
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
| | - Salman Kahn
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, California 94720, USA
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, California 94720, USA
| | - Jim Ciston
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Peter Ercius
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Jianwei Miao
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
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16
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Li S, Gali A. Identification of an Oxygen Defect in Hexagonal Boron Nitride. J Phys Chem Lett 2022; 13:9544-9551. [PMID: 36201340 PMCID: PMC9589898 DOI: 10.1021/acs.jpclett.2c02687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/04/2022] [Indexed: 05/30/2023]
Abstract
Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are promising building blocks for quantum information processing. Although numerous defect-related single-photon sources and a few quantum bits have been found, except for the boron vacancy, their identification is still elusive. Here, we demonstrate that the comparison of experimental and first-principles simulated electron paramagnetic resonance (EPR) spectra is a powerful tool for defect identification in hBN, and first-principles modeling is inevitable in this process as a result of the dense nuclear spin environment of hBN. In particular, a recently observed EPR center is associated with the negatively charged oxygen vacancy complex by means of the many-body perturbation theory method on top of hybrid density functional calculations. To our surprise, the negatively charged oxygen vacancy complex produces a coherent emission around 2 eV with a well-reproducing previously recorded photoluminescence spectrum of some quantum emitters, according to our calculations.
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Affiliation(s)
- Song Li
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Adam Gali
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
- Department
of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111Budapest, Hungary
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17
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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