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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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2
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Han S, Kim JS, Park E, Meng Y, Xu Z, Foucher AC, Jung GY, Roh I, Lee S, Kim SO, Moon JY, Kim SI, Bae S, Zhang X, Park BI, Seo S, Li Y, Shin H, Reidy K, Hoang AT, Sundaram S, Vuong P, Kim C, Zhao J, Hwang J, Wang C, Choi H, Kim DH, Kwon J, Park JH, Ougazzaden A, Lee JH, Ahn JH, Kim J, Mishra R, Kim HS, Ross FM, Bae SH. High energy density in artificial heterostructures through relaxation time modulation. Science 2024; 384:312-317. [PMID: 38669572 DOI: 10.1126/science.adl2835] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 03/06/2024] [Indexed: 04/28/2024]
Abstract
Electrostatic capacitors are foundational components of advanced electronics and high-power electrical systems owing to their ultrafast charging-discharging capability. Ferroelectric materials offer high maximum polarization, but high remnant polarization has hindered their effective deployment in energy storage applications. Previous methodologies have encountered problems because of the deteriorated crystallinity of the ferroelectric materials. We introduce an approach to control the relaxation time using two-dimensional (2D) materials while minimizing energy loss by using 2D/3D/2D heterostructures and preserving the crystallinity of ferroelectric 3D materials. Using this approach, we were able to achieve an energy density of 191.7 joules per cubic centimeter with an efficiency greater than 90%. This precise control over relaxation time holds promise for a wide array of applications and has the potential to accelerate the development of highly efficient energy storage systems.
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Affiliation(s)
- Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Justin S Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Eugene Park
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Zhihao Xu
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Alexandre C Foucher
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Gwan Yeong Jung
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Ilpyo Roh
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- M.O.P. Materials, Seoul 07285, Republic of Korea
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Sun Ok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ji-Yun Moon
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Seung-Il Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Sanggeun Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Xinyuan Zhang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Seunghwan Seo
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yimeng Li
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Suresh Sundaram
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, 57070 Metz, France
| | - Phuong Vuong
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, 57070 Metz, France
| | - Chansoo Kim
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
- Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Junyi Zhao
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
- Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Jinyeon Hwang
- Energy Storage Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Chuan Wang
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
- Department of Electrical and System Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Hyungil Choi
- M.O.P. Materials, Seoul 07285, Republic of Korea
| | - Dong-Hwan Kim
- Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jimin Kwon
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Abdallah Ougazzaden
- CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, 57070 Metz, France
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeehwan Kim
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Rohan Mishra
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
| | - Hyung-Seok Kim
- Energy Storage Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO 63130, USA
- The Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO 63130, USA
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Park BI, Kim J, Lu K, Zhang X, Lee S, Suh JM, Kim DH, Kim H, Kim J. Remote Epitaxy: Fundamentals, Challenges, and Opportunities. NANO LETTERS 2024; 24:2939-2952. [PMID: 38477054 DOI: 10.1021/acs.nanolett.3c04465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.
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Affiliation(s)
- Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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4
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Xi J, Yang H, Li X, Wei R, Zhang T, Dong L, Yang Z, Yuan Z, Sun J, Hua Q. Recent Advances in Tactile Sensory Systems: Mechanisms, Fabrication, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:465. [PMID: 38470794 DOI: 10.3390/nano14050465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Revised: 02/07/2024] [Accepted: 02/19/2024] [Indexed: 03/14/2024]
Abstract
Flexible electronics is a cutting-edge field that has paved the way for artificial tactile systems that mimic biological functions of sensing mechanical stimuli. These systems have an immense potential to enhance human-machine interactions (HMIs). However, tactile sensing still faces formidable challenges in delivering precise and nuanced feedback, such as achieving a high sensitivity to emulate human touch, coping with environmental variability, and devising algorithms that can effectively interpret tactile data for meaningful interactions in diverse contexts. In this review, we summarize the recent advances of tactile sensory systems, such as piezoresistive, capacitive, piezoelectric, and triboelectric tactile sensors. We also review the state-of-the-art fabrication techniques for artificial tactile sensors. Next, we focus on the potential applications of HMIs, such as intelligent robotics, wearable devices, prosthetics, and medical healthcare. Finally, we conclude with the challenges and future development trends of tactile sensors.
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Affiliation(s)
- Jianguo Xi
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huaiwen Yang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Xinyu Li
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Ruilai Wei
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Taiping Zhang
- Tianfu Xinglong Lake Laboratory, Chengdu 610299, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Zhenjun Yang
- Hefei Hospital Affiliated to Anhui Medical University (The Second People's Hospital of Hefei), Hefei 230011, China
| | - Zuqing Yuan
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Junlu Sun
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, Guangxi Normal University, Guilin 541004, China
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5
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Wang Z, Chen A, Tao K, Han Y, Li J. MatGPT: A Vane of Materials Informatics from Past, Present, to Future. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306733. [PMID: 37813548 DOI: 10.1002/adma.202306733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 09/05/2023] [Indexed: 10/17/2023]
Abstract
Combining materials science, artificial intelligence (AI), physical chemistry, and other disciplines, materials informatics is continuously accelerating the vigorous development of new materials. The emergence of "GPT (Generative Pre-trained Transformer) AI" shows that the scientific research field has entered the era of intelligent civilization with "data" as the basic factor and "algorithm + computing power" as the core productivity. The continuous innovation of AI will impact the cognitive laws and scientific methods, and reconstruct the knowledge and wisdom system. This leads to think more about materials informatics. Here, a comprehensive discussion of AI models and materials infrastructures is provided, and the advances in the discovery and design of new materials are reviewed. With the rise of new research paradigms triggered by "AI for Science", the vane of materials informatics: "MatGPT", is proposed and the technical path planning from the aspects of data, descriptors, generative models, pretraining models, directed design models, collaborative training, experimental robots, as well as the efforts and preparations needed to develop a new generation of materials informatics, is carried out. Finally, the challenges and constraints faced by materials informatics are discussed, in order to achieve a more digital, intelligent, and automated construction of materials informatics with the joint efforts of more interdisciplinary scientists.
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Affiliation(s)
- Zhilong Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - An Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Kehao Tao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yanqiang Han
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jinjin Li
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
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Roberts DM, Kim H, McClure EL, Lu K, Mangum JS, Braun AK, Ptak AJ, Schulte KL, Kim J, Simon J. Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy. ACS OMEGA 2023; 8:45088-45095. [PMID: 38046304 PMCID: PMC10688164 DOI: 10.1021/acsomega.3c07162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/02/2023] [Accepted: 11/07/2023] [Indexed: 12/05/2023]
Abstract
We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.
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Affiliation(s)
- Dennice M. Roberts
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Hyunseok Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | | | - Kuangye Lu
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John S. Mangum
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Anna K. Braun
- Colorado
School of Mines, Golden, Colorado 80401, United
States
| | - Aaron J. Ptak
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Kevin L. Schulte
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Jeehwan Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John Simon
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
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Choi J, Jeong J, Zhu X, Kim J, Kang BK, Wang Q, Park BI, Lee S, Kim J, Kim H, Yoo J, Yi GC, Lee DS, Kim J, Hong S, Kim MJ, Hong YJ. Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy. ACS NANO 2023; 17:21678-21689. [PMID: 37843425 DOI: 10.1021/acsnano.3c06828] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p-n junction μCs with InGaN heterostructures.
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Affiliation(s)
- Joonghoon Choi
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
| | - Junseok Jeong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xiangyu Zhu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Junghwan Kim
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Graphene Research Institute, Department of Physics, Sejong University, Seoul 05006, Republic of Korea
| | - Bong Kyun Kang
- Department of Display Materials Engineering, Soonchunhyang University, Asan, Chungnam 31538, Republic of Korea
| | - Qingxiao Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Seokje Lee
- Science Research Center (SRC) for Novel Epitaxial Quantum Architectures, Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Jekyung Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Gyu-Chul Yi
- Science Research Center (SRC) for Novel Epitaxial Quantum Architectures, Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Suklyun Hong
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Graphene Research Institute, Department of Physics, Sejong University, Seoul 05006, Republic of Korea
| | - Moon J Kim
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
- GRI-TPC International Research Center, Sejong University, Seoul 05006, Republic of Korea
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8
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Chang CS, Kim KS, Park BI, Choi J, Kim H, Jeong J, Barone M, Parker N, Lee S, Zhang X, Lu K, Suh JM, Kim J, Lee D, Han NM, Moon M, Lee YS, Kim DH, Schlom DG, Hong YJ, Kim J. Remote epitaxial interaction through graphene. SCIENCE ADVANCES 2023; 9:eadj5379. [PMID: 37862426 DOI: 10.1126/sciadv.adj5379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Accepted: 09/19/2023] [Indexed: 10/22/2023]
Abstract
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
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Affiliation(s)
- Celesta S Chang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Joonghoon Choi
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Junseok Jeong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Matthew Barone
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Nicholas Parker
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ne Myo Han
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Mingi Moon
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | - Young Joon Hong
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Microelectronic Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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9
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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10
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Wang X, Choi J, Yoo J, Hong YJ. Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates. NANO CONVERGENCE 2023; 10:40. [PMID: 37648837 PMCID: PMC10468468 DOI: 10.1186/s40580-023-00387-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 08/13/2023] [Indexed: 09/01/2023]
Abstract
Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials. The lattice transparency as the fundamental principle of remote epitaxy has been studied and challenged by recent observations defying the concept. Understanding remote epitaxy requires an integrated approach of theoretical modeling and experimental validation at multi-scales because the phenomenon includes remote interactions of atoms across an atomically thin material and a few van der Waals gaps. The roles of atomically thin 2D material for the nucleation and growth of a 3D material have not been integrated into a framework of remote epitaxy research. Here, we summarize studies of remote epitaxy mechanisms with a comparison to other epitaxy techniques. In the end, we suggest the crucial topics of remote epitaxy research for basic science and applications.
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Affiliation(s)
- Xuejing Wang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Joonghoon Choi
- Department of Nanotechnology and Advanced Materials Engineering, GRI-TPC International Research Center, Sejong University, Seoul, 05006, South Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA.
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, GRI-TPC International Research Center, Sejong University, Seoul, 05006, South Korea.
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11
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Ji J, Kwak HM, Yu J, Park S, Park JH, Kim H, Kim S, Kim S, Lee DS, Kum HS. Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review. NANO CONVERGENCE 2023; 10:19. [PMID: 37115353 PMCID: PMC10147895 DOI: 10.1186/s40580-023-00368-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 04/09/2023] [Indexed: 06/19/2023]
Abstract
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.
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Affiliation(s)
- Jongho Ji
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
| | - Hoe-Min Kwak
- School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea
| | - Jimyeong Yu
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Sangwoo Park
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
| | - Jeong-Hwan Park
- Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan
| | - Hyunsoo Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Seokgi Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea.
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea.
| | - Hyun S Kum
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.
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