Quantum-dot-sensitized solar cell with unprecedentedly high photocurrent

Unusual Defect Chemistry of Thorium Doping of PbS

The unusual defect chemistry of thorium doping in the PbS system was investigated computationally to answer several open questions arising from the experimental observations. These include finding Th in a +4 oxidation state in contrast to Pb, attracting more than two oxygen atoms on average per thorium and affecting the growth morphology of PbS and its electronic properties. We find Th to be energetically stable at the lead lattice position in PbS and to attract 2-3 oxygens, including in the adjacent interstitial position, which binds strongly to Th. This adjacent interstitial atom allows the +4 oxidation state of Th in PbS as observed experimentally. Furthermore, the bandgap of the ideal material increased due to Th incorporation, in agreement with experimental observations. Finally, we calculated the surface energies of the (100), (110), and (111) surfaces for the systems with and without thorium incorporation. Surfaces (100) and (110) were found to have negative surface energies; however, (111) surface energy was positive and, thus, preferred for the growth of Th-doped PbS thin films. These results correlate well with the experimentally observed surface topography change for PbS thin film growth from the (100) to the (111) surfaces with addition of Th.

Exchange of Thiol Ligands on CuInS2 Quantum Dots in High Boiling Solvents

As-prepared quantum dots are covered with long-chain ligands to prevent aggregation. When quantum dots are used in optoelectronic devices such as solar cells and QD-LED, ligand exchange is necessary to replace long-chain ligands with short-chain ones to increase the efficiency of charge transfer from the quantum dots to the electrode. In this study, we successfully exchanged 1-dodecanethiol (DDT) ligands on CuInS2 quantum dots with mercaptopropionic acid (MPA) ligands by using a two-phase system of high-boiling hydrophilic and hydrophobic solvents. The ligand exchange to MPA was achieved by using diethylene glycol (DEG) or ethylene glycol (EG) as the hydrophilic phase and tetradecane as the hydrophobic phase. The ligand exchange rate increased with increasing ligand exchange temperature. When quantum dot sensitized solar cells (QDSSCs) were fabricated using the ligand-exchanged quantum dots, a positive correlation was observed between the progress of ligand exchange and short-circuit current density. This is because charge transfer efficiency from the quantum dots to the TiO2 electrode was improved by the ligand exchange. This work has shown that QDs synthesized using DDT can be applied to optoelectronic devices.

Structural Dynamics of Short Ligands on the Surface of ZnSe Semiconductor Nanocrystals

ZnSe semiconductor nanocrystals (NCs) with a size comparable to their Bohr radius are synthesized, and the native capping agents with long hydrocarbon tails are replaced with short thiocyanate (SCN) ligands through a ligand exchange method. The structural dynamics of SCN ligands on the surface of ZnSe NCs in solution is investigated by ultrafast infrared spectroscopy. Vibrational population relaxation of SCN ligands is accelerated due to the specific interaction with the positively charged sites on the surface of NCs. The orientational anisotropy of the bound SCN ligands decayed at a rate much faster than that in the control solution containing Zn²⁺ cations. From the wobbling-in-the-cone model analysis, we found that the SCN ligand undergoes wobbling orientational diffusion with a relatively large cone semiangle on the surface of ZnSe NCs, and the overall orientational diffusion of bound SCN is found to be strongly dependent on the size of ZnSe NCs.

SILAR Deposition of Metal Oxide Nanostructured Films

Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

Quantum Dot Sensitized Solar Cell: Photoanodes, Counter Electrodes, and Electrolytes

In this study, we provide the reader with an overview of quantum dot application in solar cells to replace dye molecules, where the quantum dots play a key role in photon absorption and excited charge generation in the device. The brief shows the types of quantum dot sensitized solar cells and presents the obtained results of them for each type of cell, and provides the advantages and disadvantages. Lastly, methods are proposed to improve the efficiency performance in the next researching.

Interfacial Engineering at Quantum Dot-Sensitized TiO2 Photoelectrodes for Ultrahigh Photocurrent Generation

Metal oxide semiconductor/chalcogenide quantum dot (QD) heterostructured photoanodes show photocurrent densities >30 mA/cm² with ZnO, approaching the theoretical limits in photovoltaic (PV) cells. However, comparative performance has not been achieved with TiO₂. Here, we applied a TiO₂(B) surface passivation layer (SPL) on TiO₂/QD (PbS and CdS) and achieved a photocurrent density of 34.59 mA/cm² under AM 1.5G illumination for PV cells, the highest recorded to date. The SPL improves electron conductivity by increasing the density of surface states, facilitating multiple trapping/detrapping transport, and increasing the coordination number of TiO₂ nanoparticles. This, along with impeded electron recombination, led to enhanced collection efficiency, which is a major factor for performance. Furthermore, SPL-treated TiO₂/QD photoanodes were successfully exploited in photoelectrochemical water splitting cells, showing an excellent photocurrent density of 14.43 mA/cm² at 0.82 V versus the Reversible Hydrogen Electrode (RHE). These results suggest a new promising strategy for the development of high-performance photoelectrochemical devices.

Effect of Mn doping on the electron injection in CdSe/TiO2 quantum dot sensitized solar cells

Promotion in power conversion efficiency is an appealing task for quantum dot-sensitized solar cells that have emerged as promising materials for the utilization of clean and sustainable energy. Doping of Mn atoms into quantum dots (QD) has been proven to be one of the effective approaches, although the origin of such a promotion remains controversial. While several procedures are involved in the power conversion process, electron injection from the QD to the semiconductor oxide substrate is focused on in this work using first-principles calculations. Based on the Marcus theory, the electron injection rates are evaluated for the quantum dot-sensitized solar cell models in which the pure and Mn-doped core-shell CdSe clusters are deposited on a semiconductor titanium dioxide substrate. Enhanced rates are obtained for the Mn-doped structure, which is in qualitative agreement with the experiments. A large number of dominant injection channels and strong QD-substrate coupling are responsible for the Mn-induced rate enhancement, which could be achieved by manipulating the band structure mapping between the QD and the semiconductor oxide. By addressing the role of an Mn dopant in the electron injection process, strategies for the promotion of electron injection rates are proposed for the design of quantum dot-sensitized solar cells.

Low-Cost, Air-Processed Quantum Dot Solar Cells via Diffusion-Controlled Synthesis

Despite significant advances in the development of high-efficiency and stable quantum dot (QD) solar cells (QDSCs), recent synthetic and fabrication routes still require improvements to render QDSCs commercially feasible. Here, we describe a low-cost, industrially viable fabrication method of QDSCs under an ambient atmosphere (humid air and room temperature) using stable, high-quality, and small-sized PbS QDs prepared with low-cost, greener precursors [i.e., thioacetamide (TAA)] compared to the widely used bis(trimethylsilyl)sulfide [(TMS)₂S], at low temperatures without requiring any stringent conditions. The low reaction temperature, medium reactivity of TAA, and diffusion-controlled particle growth adopted in this approach provide an opportunity to synthesize ultrasmall (emission peak ∼700 nm) to larger PbS QDs (emission peak ∼1050 nm). This also enables well-controlled large-scale (multigram) synthesis with a rough estimated production cost of PbS of 8.11 $ per gram (based on materials cost), which is the lowest among the available PbS QDs produced using wet chemistry routes. QDSCs fabricated using 3.25 nm PbS QDs (bandgap 1.29 eV) under ambient conditions yield a high circuit current density (J_sc) of 32.4 mA/cm² (one of the highest values of J_sc ever reported) with a power conversion efficiency of 7.8% under 1 sun simulated sunlight at AM 1.5 G (100 mW/cm²). These devices exhibit better photovoltaic performance compared to devices fabricated with more traditional PbS QDs synthesized with (TMS)₂S under an ambient atmosphere, confirming the quality of PbS QDs produced with our method. The diffusion-controlled TAA-based synthetic route developed herein is found to be very promising for synthesizing size-tunable PbS QDs for photovoltaic and other optoelectronic applications.

Can Ferroelectricity Improve Organic Solar Cells?

Blends of semiconducting (SC) and ferroelectric (FE) polymers have been proposed for applications in resistive memories and organic photovoltaics (OPV). For OPV, the rationale is that the local electric field associated with the dipoles in a blend could aid exciton dissociation, thus improving power conversion efficiency. However, FE polymers either require solvents or processing steps that are incompatible with those required for SC polymers. To overcome this limitation, SC (poly(3-hexylthiophene)) and FE (poly(vinylidene fluoride-trifluoroethylene)) components are incorporated into a block copolymer and thus a path to a facile fabrication of smooth thin films from suitably chosen solvents is achieved. In this work, the photophysical properties and device performance of organic solar cells containing the aforementioned block copolymer consisting of poly(vinylidene fluoride-trifluoroethylene): P(VDF-TrFE), poly(3-hexylthiophene): P3HT and the electron acceptor phenyl-C₆₁ -butyric acid methyl ester: [60]PCBM are explored. A decrease in photovoltaic performance is observed in blends of the copolymer with P3HT:[60]PCBM, which is attributed to a less favorable nanomorphology upon addition of the copolymer. The role of lithium fluoride (the cathode modification layer) is also clarified in devices containing the copolymer, and it is demonstrated that ferroelectric compensation prevents the ferroelectricity of the copolymer from improving photovoltaic performance in SC-FE blends.

Adsorption and Cation-Exchange Behavior of Zinc Sulfide on Mesoporous TiO2 Film and Its Applications to Solar Cells

Zinc sulfide (ZnS) was deposited onto the surface of mesoporous TiO₂ film by a typical successive ionic layer adsorption and reaction (SILAR) process. By inducing a spontaneous cation exchange between ZnS and a target cation (Pb²⁺, Cu²⁺, Ag⁺, or Bi³⁺) dissolved in a chemical bath when they are in contact, it was demonstrated successfully that white translucent ZnS on the substrate could be changed to new brown-colored metal chalcogenides and the amount of ZnS deposited originally by different conditions could be compared in a qualitative way with the degree of color change. By utilizing this simple but effective process, the evolution of a well-known ZnS passivation layer prepared from different chemical baths in quantum dot (QD)-sensitized solar cells could be tracked visually by checking the degree of color change of TiO₂/ZnS electrodes after the induced specific cation exchange. When applied to representative CdS QD-sensitized solar cells, it was revealed clearly how the different degrees and rates of ZnS deposition could affect the overall power conversion efficiency while finding an optimized passivation layer over TiO₂/CdS electrode. An acetate anion-coupled Zn²⁺ source was observed to give a much faster deposition of a ZnS passivation layer than a nitrate anion one because of its higher pH-induced more-favorable adsorption of Zn²⁺ on the surface of TiO₂. As another useful application of the ZnS-based cation exchange, as-deposited ZnS was used as a template for preparing a more complex metal chalcogenide onto a mesoporous TiO₂ film. The ZnS-derived Sb₂S₃-sensitized electrode showed a promising initial result of over 1.0% overall power conversion efficiency with a very thin ZrO₂ passivation layer between TiO₂ and Sb₂S₃.

Exciton dissociation in an NIR-active triohybrid nanocrystal leading to efficient generation of reactive oxygen species

Lead sulfide (PbS) colloidal quantum dots (QDs) are emerging materials for fundamental studies because of their potential application in near infrared (NIR) light harvesting technologies. However, inefficient electron separation, facile charge recombination and defect state trapping of photoexcited carriers are reported as limitations of the PbS QDs to achieve efficient energy conversion. In the present study, we have synthesized a triohybrid by assembling a semiconductor titanium dioxide (TiO₂), an organic oxidizing molecule phenothiazine (PTZ) and PbS QDs. The triohybrid along with PbS_TiO₂ and PbS_PTZ hybrids has been characterized and the attachment of different components is verified by spectroscopic and microscopic techniques. The interfacial dynamics of the photoexcited carriers in the PbS_TiO₂ and PbS_PTZ hybrids have been investigated separately using steady state and time resolved photoluminescence (TRPL) measurements. The photoinduced electron transfer (PET) from the PbS QD to the conduction band (CB) of TiO₂ and photoinduced hole transfer (PHT) from the valence band (VB) of the QD to the highest occupied molecular orbital (HOMO) of PTZ have been observed and correlated mechanistically to the energy level alignments obtained from cyclic voltammetric (CV) analysis. The PTZ molecule is also found to act as a surface defect passivator of the PbS QD. Finally, simultaneous exciton dissociation and reduced back recombination phenomena have been correlated with a higher reactive oxygen species (ROS) generation activity of the triohybrid than the other two, under IR light irradiation. Thus, a detailed investigation of carrier dynamics and the mechanism of higher NIR light activity for a novel nanohybrid is explored and analyzed which could be beneficial for NIR catalysis or antibacterial activities.

Gradient-band-gap strategy for efficient solid-state PbS quantum-dot sensitized solar cells

To improve charge separation and enhance open-circuit voltage (Voc) in solid-state quantum-dot sensitized solar cells (QDSCs), gradient-band-gap PbS quantum-dots were first and easily constructed by two-step spin-coating the Pb(NO3)2 solution and the mixed solution of Na2S and 1,2-ethanedithiol via successive ionic layer absorption and reaction (SILAR). The fabricated solid-state gradient-band-gap PbS QDSCs exhibited a Voc of 0.70 V, a short-circuit photocurrent density (Jsc) of 9.65 mA·cm-2, a fill factor (FF) of 0.60, and a photoelectric conversion efficiency (PCE) of 4.08%, while the inverse gradient-band-gap PbS QDSCs showed a Voc of 0.59 V, a Jsc of 5.86 mA·cm-2, an FF of 0.49 and a PCE of 1.69%. By optimization, the best solid-state gradient-band-gap PbS QDSCs achieved a Voc of 0.65 V and a PCE of 6.29% under 1 sun, and a Voc of 0.60 V and a PCE of 7.21% under 0.5 sun. The Voc of 0.65 V was relatively high, and the PCE of 6.29% was the highest value among solid-state QDSCs constructed using SILAR.

Review of Core/Shell Quantum Dots Technology Integrated into Building’s Glazing

Skylights and windows are building openings that enhance human comfort and well-being in various ways. Recently, a massive drive is witnessed to replace traditional openings with building integrated photovoltaic (BIPV) systems to generate power in a bid to reduce buildings’ energy. The problem with most of the BIPV glazing lies in the obstruction of occupants’ vision of the outdoor view. In order to resolve this problem, new technology has emerged that utilizes quantum dots semiconductors (QDs) in glazing systems. QDs can absorb and re-emit the incoming radiation in the desired direction with the tunable spectrum, which renders them favorable for building integration. By redirecting the radiation towards edges of the glazing, they can be categorized as luminescent solar concentrators (QD-LSCs) that can help to generate electricity while maintaining transparency in the glazing. The aim of this paper is to review the different properties of core/shell quantum dots and their potential applications in buildings. Literature from various disciplines was reviewed to establish correlations between the optical and electrical properties of different types, sizes, thicknesses, and concentration ratios of QDs when used in transparent glazing. The current article will help building designers and system integrators assess the merits of integrating QDs on windows/skylights with regards to energy production and potential impact on admitted daylighting and visual comfort.

Near-Infrared Active Lead Chalcogenide Quantum Dots: Preparation, Post-Synthesis Ligand Exchange, and Applications in Solar Cells

Quantum dots (QDs) of lead chalcogenides (e.g. PbS, PbSe, and PbTe) are attractive near-infrared (NIR) active materials that show great potential in a wide range of applications, such as, photovoltaics (PV), optoelectronics, sensors, and bio-electronics. The surface ligand plays an essential role in the production of QDs, post-synthesis modification, and their integration to practical applications. Therefore, it is critically important that the influence of surface ligands on the synthesis and properties of QDs is well understood for their applications in various devices. In this Review we elaborate the application of colloidal synthesis techniques for the preparation of lead chalcogenide based QDs. We specifically focus on the influence of surface ligands on the synthesis of QDs and their solution-phase ligand exchange. Given the importance of lead chalcogenide QDs as potential light harvesters, we also pay particular attention to the current progress of these QDs in photovoltaic applications.

Investigation of Luminescence Enhancement and Decay of QD-LEDs: Interface Reactions between QDs and Atmospheres

We investigated the current unsolved problem of short-term enhancement and long-term decay of the luminescence intensity of quantum dots (QDs)-based light-emitting diodes (LEDs) in applications for lighting and displays, and proved that the interface interaction between the QD surface and atmospheres plays a key role in the QD-LED operation process. It is suggested that the initial luminescence enhancement of QD-LEDs would be caused by the QD surface-adsorbed species, such as ligands and gas molecules, rather than QDs themselves, whereas the luminescence decay is correlated to the interface reactions between QDs and photo-generated reactive oxygen species, which leads to formations of sulfate, hydroxide, and oxide compounds after QDs are illuminated by 450 nm blue light in oxygen and water environments according to surface analysis and theoretic thermodynamic calculations. It was also found that involvement of water in the QD-LED operation can cause crystal merging of QDs possibly because of the surface sulfates in the presence of water.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Interplay of the photon drag and the surface photogalvanic effects in the metal-semiconductor nanocomposite

Photon drag effect (PDE) and surface photogalvanic effect (SPGE) can be observed in centrosymmetric media and manifest themselves in photocurrents, the magnitude and polarity of which depend on wavevector and polarization of the excitation laser beam. PDE photocurrent originates from the transfer of the photon momentum to a free charge carrier, while SPGE photocurrent is due to diffuse scattering of the photoexcited carriers in the subsurface layer. However, despite the different underlying physical mechanisms, these photocurrents have almost indistinguishable dependencies on the polarization and the angle of incidence of the excitation laser beam. In this paper, we observe for the first time a competition between PDE and SPGE in the film containing metal (Ag-Pd) and semiconductor (PdO) nanocrystallites. We show that, depending on the angle of incidence, polarization azimuth and wavelength of the excitation laser beam, the interplay of the PDE and SPGE leads to the generation of either monopolar or bipolar nanosecond current pulses. The experiments performed allow us to visualize the contributions both these effects and obtain light-to-current conversion efficiency in a wide spectral range. Our experimental findings can be employed to control the magnitude and polarity of the light-induced current by polarization of the excitation laser beam.

Quantum dot-sensitized solar cells

A comprehensive overview of the development of quantum dot-sensitized solar cells (QDSCs) is presented.

Nearly monodisperse PbS quantum dots for highly efficient solar cells: anin situseeded ion exchange approach

A facilein situseeded ion-exchange is explored to produce nearly monodisperse Pbs QDs sensitized mesoporous TiO₂for highly efficient photovoltaics.

Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

The field of photovoltaics is undergoing a surge of interest following the recent discovery of the lead hybrid perovskites as a remarkably efficient class of solar absorber. Of these, methylammonium lead iodide (MAPI) has garnered significant attention due to its record breaking efficiencies, however, there are growing concerns surrounding its long-term stability. Many of the excellent properties seen in hybrid perovskites are thought to derive from the 6s² electronic configuration of lead, a configuration seen in a range of post-transition metal compounds. In this review we look beyond MAPI to other ns² solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies. The ideal properties essential to produce highly efficient solar cells are discussed and used as a framework to assess the broad range of compounds this field encompasses. Bringing together the lessons learned from this wide-ranging collection of materials will be essential as attention turns toward producing the next generation of solar absorbers.

Mn doped CdS passivated CuInSe2 quantum dot sensitized solar cells with remarkably enhanced photovoltaic efficiency

This paper explores that novel architecture of CuInSe₂/Mn-CdS exhibits remarkable enhancement in photovoltaic performance of the QDSSCs, which presents an excellent power conversion efficiency of 3.96%.

Efficient photocatalytic and photovoltaic applications with nanocomposites between CdTe QDs and an NTU-9 MOF

CdTe QDs + NTU-9 MOF as a novel photoanode to improve the efficiency of a QD cell by about 1.5%.

Formation of uniform PbS quantum dots by a spin-assisted successive precipitation and anion exchange reaction process using PbX2 (X = Br, I) and Na2S precursors

We devised a straightforward spin-assisted successive precipitation and anion exchange reaction (spin-SPAER) process in order to deposit relatively uniform PbS quantum dots (QDs) on mesoporous TiO₂ (mp-TiO₂).

Engineering Interfacial Charge Transfer in CsPbBr3 Perovskite Nanocrystals by Heterovalent Doping

Since compelling device efficiencies of perovskite solar cells have been achieved, investigative efforts have turned to understand other key challenges in these systems, such as engineering interfacial energy-level alignment and charge transfer (CT). However, these types of studies on perovskite thin-film devices are impeded by the morphological and compositional heterogeneity of the films and their ill-defined surfaces. Here, we use well-defined ligand-protected perovskite nanocrystals (NCs) as model systems to elucidate the role of heterovalent doping on charge-carrier dynamics and energy level alignment at the interface of perovskite NCs with molecular acceptors. More specifically, we develop an in situ doping approach for colloidal CsPbBr₃ perovskite NCs with heterovalent Bi³⁺ ions by hot injection to precisely tune their band structure and excited-state dynamics. This synthetic method allowed us to map the impact of doping on CT from the NCs to different molecular acceptors. Using time-resolved spectroscopy with broadband capability, we clearly demonstrate that CT at the interface of NCs can be tuned and promoted by metal ion doping. We found that doping increases the energy difference between states of the molecular acceptor and the donor moieties, subsequently facilitating the interfacial CT process. This work highlights the key variable components not only for promoting interfacial CT in perovskites, but also for establishing a higher degree of precision and control over the surface and the interface of perovskite molecular acceptors.

Carbon Counter-Electrode-Based Quantum-Dot-Sensitized Solar Cells with Certified Efficiency Exceeding 11

The mean power conversion efficiency (PCE) of quantum-dot-sensitized solar cells (QDSCs) is mainly limited by the low photovoltage and fill factor (FF), which are derived from the high redox potential of polysulfide electrolyte and the poor catalytic activity of the counter electrode (CE), respectively. Herein, we report that this problem is overcome by adopting Ti mesh supported mesoporous carbon (MC/Ti) CE. The confined area in Ti mesh substrate not only offers robust carbon film with submillimeter thickness to ensure high catalytic capacity, but also provides an efficient three-dimension electrical tunnel with better conductivity than state-of-art Cu2S/FTO CE. More importantly, the MC/Ti CE can down shift the redox potential of polysulfide electrolyte to promote high photovoltage. In all, MC/Ti CEs boost PCE of CdSe0.65Te0.35 QDSCs to a certified record of 11.16% (Jsc = 20.68 mA/cm(2), Voc = 0.798 V, FF = 0.677), an improvement of 24% related to previous record. This work thus paves a way for further improvement of performance of QDSCs.

Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells

A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn2+ is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the “loss-in-potential,” inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.

Semiconductor Quantum Dot Sensitized Solar Cells Based on Ferricyanide/Ferrocyanide Redox Electrolyte Reaching an Open Circuit Photovoltage of 0.8 V

Semiconductor quantum dot sensitized solar cells (QDSSCs) have rapidly been developed, and their efficiency has recently exceeded 9%. Their performances have mainly been achieved by focusing on improving short circuit photocurrent employing polysulfide electrolytes. However, the increase of open circuit photovoltage (VOC) cannot be expected with QDSSCs based on the polysulfide electrolytes owing to their relatively negative redox potential (around -0.65 V vs Ag/AgCl). Here, we demonstrate enhancement of the open circuit voltage by employing an alternative electrolyte, ferricyanide/ferrocyanide redox couple. The solar cell performance was optimized by investigating the influence of ferricyanide and ferrocyanide concentration on their interfacial charge transfer and transport kinetics. The optimized ferricyanide/ferrocyanide species concentrations (0.01/0.2 M) result in solar energy conversion efficiency of 2% with VOC of 0.8 V. Since the potential difference between the TiO2 conduction band edge at pH 7 and the electrolyte redox potential is about 0.79 V, although the conduction band edge shifts negatively under the negative bias application into the TiO2 electrode, the solar cell with the optimized electrolyte composition has nearly reached the theoretical maximum voltage. This study suggests a promising method to optimize an electrolyte composition for maximizing solar energy conversion efficiency.

Improving the Photocurrent in Quantum-Dot-Sensitized Solar Cells by Employing Alloy PbxCd1-xS Quantum Dots as Photosensitizers

Ternary alloy Pb_xCd_1−xS quantum dots (QDs) were explored as photosensitizers for quantum-dot-sensitized solar cells (QDSCs). Alloy Pb_xCd_1−xS QDs (Pb_0.54Cd_0.46S, Pb_0.31Cd_0.69S, and Pb_0.24Cd_0.76S) were found to substantially improve the photocurrent of the solar cells compared to the single CdS or PbS QDs. Moreover, it was found that the photocurrent increases and the photovoltage decreases when the ratio of Pb in Pb_xCd_1−xS is increased. Without surface protecting layer deposition, the highest short-circuit current density reaches 20 mA/cm² under simulated AM 1.5 illumination (100 mW/cm²). After an additional CdS coating layer was deposited onto the Pb_xCd_1−xS electrode, the photovoltaic performance further improved, with a photocurrent of 22.6 mA/cm² and an efficiency of 3.2%.

Quantum dot decorated aligned carbon nanotube bundles for a performance enhanced photoswitch

Photoactive materials that are triggered by the irradiation of light to generate an electrical response provide an ecofriendly platform to afford efficient power sources and switches. A chemical assembly of well-known elements with aligned carbon nanotube bundles is reported here, which was employed to form an efficient photo-induced charge transfer device. The primary elements of this device are ultra-long multi-walled carbon nanotube (MWCNT) bundles, polyaniline (PANI) thin film coating, and CdSe quantum dots (QDs). Highly ordered and horizontally aligned MWCNT bundles were coated with PANI to enhance charge transfer properties of active QDs in this platform. The obtained device (CdSe-MWCNT@PANI) constructed on a silicon base exhibits highly efficient power conversion capabilities owing to the aligned MWCNT bundle assisted enhanced charge transport pathways generated within the device. The device also shows a short circuit current density (Jsc) of 9.81 mA cm(-2) and an open circuit voltage (Voc) of 0.46 V. The power conversion efficiency (PCE) of the device is 5.41%, and the current response is quite stable, highly responsive, and reproducible.

Enhanced Performance of PbS-quantum-dot-sensitized Solar Cells via Optimizing Precursor Solution and Electrolytes

This work reports a PbS-quantum-dot-sensitized solar cell (QDSC) with power conversion efficiency (PCE) of 4%. PbS quantum dots (QDs) were grown on mesoporous TiO₂ film using a successive ion layer absorption and reaction (SILAR) method. The growth of QDs was found to be profoundly affected by the concentration of the precursor solution. At low concentrations, the rate-limiting factor of the crystal growth was the adsorption of the precursor ions, and the surface growth of the crystal became the limiting factor in the high concentration solution. The optimal concentration of precursor solution with respect to the quantity and size of synthesized QDs was 0.06 M. To further increase the performance of QDSCs, the 30% deionized water of polysulfide electrolyte was replaced with methanol to improve the wettability and permeability of electrolytes in the TiO₂ film, which accelerated the redox couple diffusion in the electrolyte solution and improved charge transfer at the interfaces between photoanodes and electrolytes. The stability of PbS QDs in the electrolyte was also improved by methanol to reduce the charge recombination and prolong the electron lifetime. As a result, the PCE of QDSC was increased to 4.01%.