Thermal conductivity of twisted bilayer graphene

Ultrahigh Thermal Conductance across Superlubric Interfaces in Twisted Graphite

Interlayer rotation in van der Waals (vdW) materials offers a unique degree of freedom for manipulating lattice dynamics and leads to an exotic state with vanishing friction called structural superlubricity. Extensive theoretical calculations have also predicted the potential of twisted vdW materials for controlling heat flow in advanced electronics. However, precise experimental measurements have proven extremely challenging with only a handful of efforts to date reporting inconsistent results. Here, we have managed to achieve simultaneous mechanical characterizations and thermal measurements of the intrinsic twisted interfaces in microfabricated graphite mesas. Remarkably, the conductance of superlubric interfaces reaches about 600  MWm^{-2} K^{-1} which surpasses the measured values for artificially stacked vdW structures by nearly an order of magnitude. Nonetheless, we successfully resolved over 30-fold variation of thermal conductance as the buried interfaces were rotated to a locked state. Further, atomic simulations revealed the predominant role of the transverse acoustic phonons. Together, our findings highlight a general physical picture that directly correlates interfacial thermal transport with sliding resistance, and lay the foundation for twist-enabled thermal management which are particularly beneficial to twistronics and slidetronics.

Twisted Bilayer MoS2 under Electric Fields: A System with Tunable Symmetry

Gate voltages take full advantage of 2D systems, making it possible to explore novel states of matter by controlling their electron concentration or applying perpendicular electric fields. Here, we study the electronic properties of small-angle twisted bilayer MoS2 under a strong electric field. We show that transport across one of its constituent layers can be effectively regarded as a two-dimensional electron gas under a nanoscale potential. We find that the band structure of such a system is reconstructed following two fundamentally different symmetries depending on the orientation of the external electric field, namely, hexagonal or honeycomb. By studying this system under magnetic fields, we demonstrate that this duality not only translates into two different transport responses but also results in having two different Hofstadter's spectra. Our work opens up a new route for the creation of controllable artificial superlattices in van der Waals heterostructures.

Engineered moiré photonic and phononic superlattices

Recent discoveries of Mott insulating and unconventional superconducting states in twisted bilayer graphene with moiré superlattices have not only reshaped the landscape of 'twistronics' but also sparked the rapidly growing fields of moiré photonic and phononic structures. These innovative moiré structures have opened new routes of exploration for classical wave physics, leading to intriguing phenomena and robust control of electromagnetic and mechanical waves. Drawing inspiration from the success of twisted bilayer graphene, this Perspective describes an overarching framework of the emerging moiré photonic and phononic structures that promise novel classical wave devices. We begin with the fundamentals of moiré superlattices, before highlighting recent studies that exploit twist angle and interlayer coupling as new ingredients with which to engineer and tailor the band structures and effective material properties of photonic and phononic structures. Finally, we discuss the future directions and prospects of this emerging area in materials science and wave physics.

Enhanced thermoelectric performance of a wide-bandgap twisted heterostructure of graphene and boron nitride

The manipulation of the relative twist angle between consecutive layers in two-dimensional (2D) materials dramatically modulates their electronic characteristics. Twisted bilayer graphene (tblg) and twisted boron nitride (tBN) exhibit Moiré patterns that have the potential to revolutionize various fields, from electronics to quantum materials. Here, the electronic and thermoelectric properties of 21.8° tblg and 21.8° tBN and a 21.8° twisted graphene/boron nitride (Gr/BN) heterostructure were investigated using density functional theory and Boltzmann transport theory. The twisted Gr/BN heterostructure possesses a wide band gap of 1.95 eV, which overcomes the limitations of the absence of a band gap of graphene and boron nitride's extremely wide band gap. A significant increase in thermoelectric power factor was obtained for the heterostructure compared to its parent materials, 21.8° tblg and 21.8° tBN. It has a thermal conductivity of 5.88 W m-1 K-1 at 300 K, which is much lower than those of 21.8° tblg and 21.8° tBN. It is observed that graphene plays an important role in electron transport or power factor enhancement, whereas BN helps in reducing the thermal conductivity in twisted Gr/BN systems. A strong role of boundary scattering in thermal transport compared to electrical transport was observed. A high figure of merit (ZT) of 1.28 for the twisted Gr/BN heterostructure at a ribbon width of L = 10 nm and T = 900 K was obtained. This suggests its suitability as an effective material for thermoelectric applications.

A Molecular Dynamics Simulation Study of In- and Cross-Plane Thermal Conductivity of Bilayer Graphene

Efficient thermal management of modern electronics requires the use of thin films with highly anisotropic thermal conductivity. Such films enable the effective dissipation of excess heat along one direction while simultaneously providing thermal insulation along the perpendicular direction. This study employs non-equilibrium molecular dynamics to investigate the thermal conductivity of bilayer graphene (BLG) sheets, examining both in-plane and cross-plane thermal conductivities. The in-plane thermal conductivity of 10 nm × 10 nm BLG with zigzag and armchair edges at room temperature is found to be around 204 W/m·K and 124 W/m·K, respectively. The in-plane thermal conductivity of BLG increases with sheet length. BLG with zigzag edges consistently exhibits 30-40% higher thermal conductivity than BLG with armchair edges. In addition, increasing temperature from 300 K to 600 K decreases the in-plane thermal conductivity of a 10 nm × 10 nm zigzag BLG by about 34%. Similarly, the application of a 12.5% tensile strain induces a 51% reduction in its thermal conductivity compared to the strain-free values. Armchair configurations exhibit similar responses to variations in temperature and strain, but with less sensitivity. Furthermore, the cross-plane thermal conductivity of BLG at 300 K is estimated to be 0.05 W/m·K, significantly lower than the in-plane results. The cross-plane thermal conductance of BLG decreases with increasing temperatures, specifically, at 600 K, its value is almost 16% of that observed at 300 K.

Twist angle-dependent work functions in CVD-grown twisted bilayer graphene probed by Kelvin probe force microscopy

Tailoring the interlayer twist angle of bilayer graphene (BLG) significantly affects its electronic properties, including its superconductivity, topological transitions, ferromagnetic states, and correlated insulating states. These exotic electronic properties are sensitive to the work functions of BLG samples. In this study, the twist angle-dependent work functions of chemical vapour deposition-grown twisted bilayer graphene (tBLG) were investigated in detail using Kelvin probe force microscopy (KPFM) in combination with Raman spectroscopy. The thickness-dependent surface potentials of Bernal-stacked multilayer graphene were measured. It is found that with the increase in the number of layers, the work function decreases and tends to saturate. Bernal-stacked BLG and tBLG were determined via KPFM due to their twist angle-specific surface potentials. The detailed relationship between the twist angle and surface potential was determined via in situ KPFM and Raman spectral measurements. With the increase in the twist angle, the work function of tBLG will increase rapidly and then increase slowly when it is greater than 5°. The thermal stability of tBLG was investigated through a controlled annealing process. tBLG will become Bernal-stacked BLG after annealing at 350 °C. Our work provides the twist angle-dependent surface potentials of tBLG and provides the relevant conditions for the stability of the twist angle, which lays the foundation for further exploration of its twist angle-dependent electronic properties.

Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.

Enhanced Thermoelectric Performance in Black Phosphorene via Tunable Interlayer Twist

Twist-angle two-dimensional (2D) systems are attractive in their exotic and tunable properties by the formation of the moiré superlattices, allowing easy access to manipulating intrinsic electrical and thermal properties. Here, the angle-dependent thermoelectric properties of twisted bilayer black phosphorene (tbBP) by first-principles calculations are reported. The simulations show that significantly enhanced Seebeck coefficient and power factor can be achieved in p-type tbBP due to merging of the multi-valley electronic states and flat moiré bands. Moreover, the twisted layers bring in a strong anharmonic phonon scattering and thus very low lattice thermal conductivity of 4.51 W m^-1  K^-1 at 300 K. Consequently, a maximal ZT value can be achieved in p-type 10.11° tbBP along the armchair direction up to 0.57 and 1.06 at 300 and 500 K, respectively. The room-temperature ZT value along the zigzag direction is also significantly increased by almost 40 times compared to pristine BP when the twist angle is close to 70.68°. This work demonstrates a platform to manipulate thermoelectric performance in 2D materials by creating moiré patterns, leading tbBP as a promising eco-friendly candidate for thermoelectric applications.

Graphene Properties, Synthesis and Applications: A Review

We have evaluated some of the most recent breakthroughs in the synthesis and applications of graphene and graphene-based nanomaterials. This review includes three major categories. The first section consists of an overview of the structure and properties, including thermal, optical, and electrical transport. Recent developments in the synthesis techniques are elaborated in the second section. A number of top-down strategies for the synthesis of graphene, including exfoliation and chemical reduction of graphene oxide, are discussed. A few bottom-up synthesis methods for graphene are also covered, including thermal chemical vapor deposition, plasma-enhanced chemical vapor deposition, thermal decomposition of silicon, unzipping of carbon nanotubes, and others. The final section provides the recent innovations in graphene applications and the commercial availability of graphene-based devices.

Electrically-driven robust tuning of lattice thermal conductivity

The two-dimensional (2D) materials, represented by graphene, stand out in the electrical industry applications of the future and have been widely studied. As commonly existing in electronic devices, the electric field has been extensively utilized to modulate the performance. However, how the electric field regulates thermal transport is rarely studied. Herein, we investigate the modulation of thermal transport properties by applying an external electric field ranging from 0 to 0.4 V Å^-1, with bilayer graphene, monolayer silicene, and germanene as study cases. The monotonically decreasing trend of thermal conductivity in all three materials is revealed. A significant effect on the scattering rate is found to be responsible for the decreased thermal conductivity driven by the electric field. Further evidence shows that the reconstruction of internal electric field and generation of induced charges lead to increased scattering rate from strong phonon anharmonicity. Thus, the ultralow thermal conductivity emerges with the application of external electric fields. Applying an external electric field to regulate thermal conductivity illustrates a constructive idea for highly efficient thermal management.

Tunable lattice thermal conductivity of twisted bilayer MoS2

We have studied the thermal conductivity (κ) of layered MoS₂, a typical member of the transition metal dichalcogenide (TMDC) materials, using fully atomistic molecular dynamics simulations and Boltzmann transport equation (BTE) based first principles methods. We investigate the tuning of the thermal conductivity with the twist angle between two layers and found a decreasing trend of κ with the increase in the lattice constant of the moiré superlattice. The thermal conductivity at twist angle θ = 21.78° is found to be 72.03 W m^-1 K^-1 and for an angle of 2.87°, it reaches 54.48 W m^-1 K^-1, leading to a 32% reduction in the thermal conductivity. We use first principles calculations based on the BTE for phonons to give a microscopic origin of the decrease in thermal conductivity through anharmonic phonon scattering events and also reaffirm the MD simulation results for the monolayer and bilayer.

Exploring the enhancement of the thermoelectric properties of bilayer graphyne nanoribbons

Carbon materials are vital for sustainable energy applications based on abundant and non-toxic raw materials. In this scenario, carbon nanoribbons have superior thermoelectric properties in comparison with their 2D material counterparts, owing to their particular electronic and transport properties. Therefore, we explore the electronic and thermoelectric properties of bilayer α-graphyne nanoribbons (α-BGyNRs) by means of density functional theory, tight-binding, and the non-equilibrium Green's functions (NEGF) method. Our calculations indicate that Ab stacking is the most stable configuration regardless of the edge type. The band structure presents finite band gaps with different features for armchair and zigzag nanoribbons. Concerning the thermoelectric quantities, the Seebeck coefficient is highly sensitive to the width and edge type, while its room-temperature values can achieve a measurable mV K^-1 scale. The electric conductance is found to increase due to layering, thus enhancing the power factor for α-BGyNRs compared with single nanoribbons. These findings therefore indicate the possibility of engineering such systems for thermal nanodevices.

Atomistic Engineering of Phonons in Functional Oxide Heterostructures

Engineering of phonons, that is, collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of III-V compound semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, artificial engineering of phonons in the atomic-scale SrRuO3 /SrTiO3 superlattices is demonstrated, wherein tunable phonon modes are observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone-folded acoustic phonons in the THz frequency domain. The frequencies can be largely tuned from 1 to 2 THz via atomic-scale precision thickness control. In addition, a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices is observed, exhibiting emergent functionality. The approach of atomic-scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration.

Review on Techniques for Thermal Characterization of Graphene and Related 2D Materials

The discovery of graphene and its analog, such as MoS2, has boosted research. The thermal transport in 2D materials gains much of the interest, especially when graphene has high thermal conductivity. However, the thermal properties of 2D materials obtained from experiments have large discrepancies. For example, the thermal conductivity of single layer suspended graphene obtained by experiments spans over a large range: 1100-5000 W/m·K. Apart from the different graphene quality in experiments, the thermal characterization methods play an important role in the observed large deviation of experimental data. Here we provide a critical review of the widely used thermal characterization techniques: the optothermal Raman technique and the micro-bridge method. The critical issues in the two methods are carefully revised and discussed in great depth. Furthermore, improvements in Raman-based techniques to investigate the energy transport in 2D materials are discussed.

Full-spectrum thermal analysis in twisted bilayer graphene

It has been recently reported that a magic angle, i.e. 1.1°, exists in twisted bilayer graphene which could lead to intrinsic unconventional superconductivity. Variations of the twisting angle between different graphene layers could lead to altered electronic band structures, which results in the peculiar superconductivity phenomenon. The effects of twisting angles on different properties of bilayer graphene need to be comprehensively investigated in order to fully understand its mechanism. In this work, classical molecular dynamics simulations are performed to calculate the interfacial thermal resistance (R) at twisting angles from 0° to 359°. Due to the symmetric structures of the honeycomb lattice, only angles from 0° to 60° are needed but the full spectrum is explored to generate the complete picture of R with θ. It was reported that the interfacial thermal resistance changes periodically with the twisting angle, with the smallest R values at every 60° starting from 0° and the largest values at every 60° starting from 30°. The phonon density of states and radial distribution functions are calculated to explain the predicted results. The effects of temperature and single- and bi-direction tensile strains on the calculated interfacial thermal resistance are also studied. The results in this work contribute to the fundamental understanding of the thermal properties in twisted bilayer graphene and provide reasonable guidelines to its applications in thermal management devices.

Phonon transport in graphene based materials

Graphene, due to its atomic layer structure, has the highest room temperature thermal conductivity k for all known materials. Thus, it is expected that graphene based materials are the best candidates for thermal management in next generation electronic devices. In this perspective, we first review the in-plane k of monolayer graphene and multilayer graphene obtained using experimental measurements, theoretical calculations and molecular dynamics (MD) simulations. Considering the importance of four-phonon scattering in graphene, we also compare the effects of three-phonon and four-phonon scattering on phonon transport in graphene. Then, we review phonon transport along the cross-plane direction of multilayer graphene and highlight that the cross-plane phonon mean free path is several hundreds of nanometers instead of a few nanometers as predicted using classical kinetic theory. Recently, hydrodynamic phonon transport has been observed experimentally in graphitic materials. The criteria for distinguishing the hydrodynamic from ballistic and diffusive regimes are discussed, from which we conclude that graphene based materials with a high Debye temperature and high anharmonicity (due to ZA modes) are excellent candidates to observe the hydrodynamic phonon transport. In the fourth part, we review how to actively control phonon transport in graphene. Graphene and graphite are often adopted as additives in thermal management materials such as polymer nanocomposites and thermal interface materials due to their high k. However, the enhancement of the composite's k is not so high as expected because of the large thermal resistance between graphene sheets as well as between the graphene sheet and matrix. In the fifth part, we discuss the interfacial thermal resistance and analyze its effect on the thermal conductivity of graphene based materials. In the sixth part, we give a brief introduction to the applications of graphene based materials in thermal management. Finally, we conclude our review with some perspectives for future research.

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of composites, while simultaneously preserving electrical insulation. A hybrid filler approach, using graphene and boron nitride, is presented as a possible technology providing for the independent control of electrical and thermal conduction. The reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of graphene-enhanced thermal interface materials compared to alternative technologies.

Thermal transport across wrinkles in few-layer graphene stacks

Wrinkles significantly influence the physical properties of layered 2D materials, including graphene. In this work, we examined thermal transport across wrinkles in vertical assemblies of few-layer graphene crystallites using the Raman optothermal technique supported by finite-element analysis simulations. A high density of randomly oriented uniaxial wrinkles were frequently observed in the few-layer graphene stacks which were grown by chemical vapor deposition and transferred on Si/SiO₂ substrates. The thermal conductivity of unwrinkled regions was measured to be, κ ∼ 165 W m^-1 K^-1. Measurements at the wrinkle sites revealed local enhancement of thermal conductivity, with κ ∼ 225 W m^-1 K^-1. Furthermore, the total interface conductance of wrinkled regions decreased by more than an order of magnitude compared to that of the unwrinkled regions. The physical origin of these observations is discussed based on wrinkle mediated decoupling of the stacked crystallites and partial suspension of the film. Wrinkles are ubiquitous in layered 2D materials, and our work demonstrates their strong influence on thermal transport.

Phononics of Graphene and Related Materials

In this Perspective, I present a concise account concerning the emergence of the research field investigating the phononic and thermal properties of graphene and related materials, covering the refinement of our understanding of phonon transport in two-dimensional material systems. The initial interest in graphene originated from its unique linear energy dispersion for electrons, revealed in exceptionally high electron mobility, and other exotic electronic and optical properties. Electrons are not the only elemental excitations influenced by a reduction in dimensionality. Phonons-quanta of crystal lattice vibrations-also demonstrate an extreme sensitivity to the number of atomic planes in the few-layer graphene, resulting in unusual heat conduction properties. I outline recent theoretical and experimental developments in the field and discuss how the prospects for the mainstream electronic application of graphene, enabled by its high electron mobility, gradually gave way to emerging real-life products based on few-layer graphene, which utilize its unique heat conduction rather than its electrical conduction properties.

Thermal transport of carbon nanomaterials

The diversity of thermal transport properties in carbon nanomaterials enables them to be used in different thermal fields such as heat dissipation, thermal management, and thermoelectric conversion. In the past two decades, much effort has been devoted to study the thermal conductivities of different carbon nanomaterials. In this review, different theoretical methods and experimental techniques for investigating thermal transport in nanosystems are first summarized. Then, the thermal transport properties of various pure carbon nanomaterials including 1D carbon nanotubes, 2D graphene, 3D carbon foam, are reviewed in details and the associated underlying physical mechanisms are presented. Meanwhile, we discuss several important influences on the thermal conductivities of carbon nanomaterials, including size, structural defects, chemisorption and strain. Moreover, we introduce different nanostructuring pathways to manipulate the thermal conductivities of carbon-based nanocomposites and focus on the wave nature of phonons for controlling thermal transport. At last, we briefly review the potential applications of carbon nanomaterials in the fields of thermal devices and thermoelectric conversion.

Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil

High-quality AB-stacked bilayer or multilayer graphene larger than a centimetre has not been reported. Here, we report the fabrication and use of single-crystal Cu/Ni(111) alloy foils with controllable concentrations of Ni for the growth of large-area, high-quality AB-stacked bilayer and ABA-stacked trilayer graphene films by chemical vapour deposition. The stacking order, coverage and uniformity of the graphene films were evaluated by Raman spectroscopy and transmission electron microscopy including selected area electron diffraction and atomic resolution imaging. Electrical transport (carrier mobility and band-gap tunability) and thermal conductivity (the bilayer graphene has a thermal conductivity value of about 2,300 W m^-1 K^-1) measurements indicated the superior quality of the films. The tensile loading response of centimetre-scale bilayer graphene films supported by a 260-nm thick polycarbonate film was measured and the average values of the Young's modulus (478 GPa) and fracture strength (3.31 GPa) were obtained.

In-plane anisotropy in twisted bilayer graphene probed by Raman spectroscopy

Monolayer graphene has high symmetrical crystal structure and exhibits in-plane isotropic physical properties. However, twisted bilayer graphene (tBLG) is expected to differ physically, due to the broken symmetry introduced by the interlayer coupling between adjacent graphene layers. This symmetry breaking is usually accompanied by in-plane anisotropy in their electrical, optical and thermal properties. However, the existence of in-plane anisotropy in tBLG has remained evasive until now. Here, an unambiguous identification of the in-plane anisotropy in tBLG is established by angle-resolved polarized Raman spectroscopy. It was found that the double-resonant two-dimensional band is anisotropic. The degree of in-plane anisotropy is found to be dependent on the misorientation angles, which is two- and four-fold for tBLG with misorientation angles of 15° and 20°, respectively. This finding adds a new dimension to the properties of graphene, which opens a possibility to the development of graphene-based angle-resolved photonics and electronics.

Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer

For III-nitride-based devices, such as high-brightness light-emitting diodes (LEDs), the poor heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts many of their applications. Herein, the role of vertically oriented graphene (VG) nanowalls as a buffer layer for improving the heat dissipation in AlN films on sapphire substrates is studied. It is found that VG nanowalls can effectively enhance the heat dissipation between an AlN film and a sapphire substrate in the longitudinal direction because of their unique vertical structure and good thermal conductivity. Thus, an LED fabricated on a VG-sapphire substrate shows a 37% improved light output power under a high injection current (350 mA) with an effective 3.8% temperature reduction. Moreover, the introduction of VG nanowalls does not degrade the quality of the AlN film, but instead promotes AlN nucleation and significantly reduces the epilayer strain that is generated during the cooling process. These findings suggest that the VG nanowalls can be a good buffer layer candidate in III-nitride semiconductor devices, especially for improving the heat dissipation in high-brightness LEDs.

High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion

Heat management has become more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation is of great importance. Here, we report that high-quality one-atom-thin hexagonal boron nitride (BN) has a thermal conductivity (κ) of 751 W/mK at room temperature, the second largest κ per unit weight among all semiconductors and insulators. The κ of atomically thin BN decreases with increased thickness. Our molecular dynamic simulations accurately reproduce this trend, and the density functional theory (DFT) calculations reveal the main scattering mechanism. The thermal expansion coefficients of monolayer to trilayer BN at 300 to 400 K are also experimentally measured for the first time. Owing to its wide bandgap, high thermal conductivity, outstanding strength, good flexibility, and excellent thermal and chemical stability, atomically thin BN is a strong candidate for heat dissipation applications, especially in the next generation of flexible electronic devices.

Interlayer Difference of Bilayer-Stacked MoS2 Structure: Probing by Photoluminescence and Raman Spectroscopy

This work reports the interlayer difference of exciton and phonon performance between the top and bottom layer of a bilayer-stacked two-dimensional materials structure (BSS). Through photoluminescence (PL) and Raman spectroscopy, we find that, compared to that of the bottom layer, the top layer of BSS demonstrates PL redshift, Raman E 2 g 1 mode redshift, and lower PL intensity. Spatial inhomogeneity of PL and Raman are also observed in the BSS. Based on theoretical analysis, these exotic effects can be attributed to substrate-coupling-induced strain and doping. Our findings provide pertinent insight into film-substrate interaction, and are of great significance to researches on bilayer-stacked structures including twisted bilayer structure, Van der Waals hetero- and homo-structure.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Atomic Structure and Mechanical Properties of Twisted Bilayer Graphene

We studied the atomic structure and mechanical properties of twisted bilayer graphene with a different twist angle using molecular dynamic simulations. The two layers are corrugated after energy minimization. We found two different modes of corrugation. The mechanical properties are tested both in-plane and perpendicular to the plane. The in-plane properties are dominated by the orientation of graphene. The perpendicular properties depend on the twist angle, as the larger the twist angle, the higher the intrinsic strength.

Thermal Percolation Threshold and Thermal Properties of Composites with High Loading of Graphene and Boron Nitride Fillers

We investigated thermal properties of the epoxy-based composites with the high loading fraction-up to f ≈ 45 vol %-of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction f_T > 20 vol %. The graphene loading required for achieving thermal percolation, f_T, was substantially higher than the loading, f_E, for electrical percolation. Graphene fillers outperformed boron nitride fillers in the thermal conductivity enhancement. It was established that thermal transport in composites with high filler loadings, f ≥ f_T, is dominated by heat conduction via the network of percolating fillers. Unexpectedly, we determined that the thermal transport properties of the high loading composites were influenced strongly by the cross-plane thermal conductivity of the quasi-two-dimensional fillers. The obtained results shed light on the debated mechanism of the thermal percolation, and facilitate the development of the next generation of the efficient thermal interface materials for electronic applications.

Moiré Phonons in Twisted Bilayer MoS2

The material choice, layer thickness, and twist angle widely enrich the family of van der Waals heterostructures (vdWHs), providing multiple degrees of freedom to engineer their optical and electronic properties. The moiré patterns in vdWHs create a periodic potential for electrons and excitons to yield many interesting phenomena, such as Hofstadter butterfly spectrum and moiré excitons. Here, in the as-grown/transferred twisted bilayer MoS₂ (tBLMs), one of the simplest prototypes of vdWHs, we show that the periodic potentials of moiré patterns also modify the properties of phonons of its monolayer MoS₂ constituent to generate Raman modes related to moiré phonons. These Raman modes correspond to zone-center phonons in tBLMs, which are folded from the off-center phonons in monolayer MoS₂. However, the folded phonons related to crystallographic superlattices are not observed in the Raman spectra. By varying the twist angle, the moiré phonons of tBLM can be exploited to map the phonon dispersions of the monolayer constituent. The lattice dynamics of the moiré phonons are modulated by the patterned interlayer coupling resulting from periodic potential of moiré patterns, as confirmed by density functional theory calculations. The Raman intensity related to moiré phonons in all tBLMs are strongly enhanced when the excitation energy approaches the C exciton energy. This study can be extended to various vdWHs to deeply understand their Raman spectra, moiré phonons, lattice dynamics, excitonic effects, and interlayer coupling.

Coherent control of thermal phonon transport in van der Waals superlattices

van der Waals (vdW) heterostructures are a central focus of materials science and condensed matter physics due to the novel physical phenomena and properties obtained by precisely stacking heterogeneous atomically thin layers. vdW heterostructures are expected to allow for the coherent manipulation of THz lattice vibrations and hence heat conduction due to the ability to precisely control chemical composition at the atomic scale, but little work has focused on thermal transport in these materials. Here, we report an ab initio study of thermal transport in vdW superlattices consisting of alternating transition metal dichalcogenide atomic layers. Our calculations show that the lattice vibrational spectrum and scattering rates can be precisely manipulated by the choice of each atomically thin layer, resulting in materials with novel properties such as large thermal anisotropies approaching 200 and ultralow cross-plane thermal conductivities comparable to those of amorphous materials. Our work demonstrates how coherent manipulation of phonons in vdW superlattices can expand the property space beyond that occupied by natural materials and suggests an experimental route to realize these properties.

Raman Spectral Band Oscillations in Large Graphene Bubbles

Raman spectra of large graphene bubbles showed size-dependent oscillations in spectral intensity and frequency, which originate from optical standing waves formed in the vicinity of the graphene surface. At a high laser power, local heating can lead to oscillations in the Raman frequency and also create a temperature gradient in the bubble. Based on Raman data, the temperature distribution within the graphene bubble was calculated, and it is shown that the heating effect of the laser is reduced when moving from the center of a bubble to its edge. By studying graphene bubbles, both the thermal conductivity and chemical reactivity of graphene were assessed. When exposed to hydrogen plasma, areas with bubbles are found to be more reactive than flat graphene.

Thermal Transport in Phosphorene

Phosphorene, a novel elemental 2D semiconductor, possesses fascinating chemical and physical properties which are distinctively different from other 2D materials. The rapidly growing applications of phosphorene in nano/optoelectronics and thermoelectrics call for comprehensive studies of thermal transport properties. In this Review, based on the theoretical and experimental progresses, the thermal transport properties of single-layer phosphorene, multilayer phosphorene (nanofilms), and bulk black phosphorus are summarized to give a general view of the overall thermal conductivity trend from single-layer to bulk form. The mechanism underlying the discrepancy in the reported thermal conductivity of phosphorene is discussed by reviewing the effect of different functionals and cutoff distances on the thermal transport evaluations. This Review then provides fundamental insight into the thermal transport in phosphorene by reviewing the role of resonant bonding in driving giant phonon anharmonicity and long-range interactions. In addition, the extrinsic thermal conductivity of phosphorene is reviewed by discussing the effects of strain and substrate, together with phosphorene based heterostructures and nanoribbons. This Review summarizes the progress of thermal transport in phosphorene from both theoretical calculations and experimental measurements, which would be of significance to the design and development of efficient phosphorene based nanoelectronics.

Spotting the differences in two-dimensional materials – the Raman scattering perspective

This review discusses the Raman spectroscopic characterization of 2D materials with a focus on the “differences” from primitive 2D materials.

Capabilities of transition metals in retarding the bonding of carbon atoms to minimize dendritic graphene

The avoidance of growing dendritic graphene on the copper substrate during the chemical vapor deposition process is greatly desired. Here we have identified a mechanism, in which (1) transition metal plates placed inside the copper pockets reduce the majority of active carbon atoms to eventually suppress the graphene growth rate, and (2) transition metals etch graphene C-C bonds along defective edges to grow into zigzag-edge ending domains with higher priorities. Via isotopic labeling of the methane method, we have observed bright-dark-alternating hexagonal-shaped rings, which are shown in Raman mapping images. Under a hydrogen atmosphere, we are capable of acquiring hexagonal openings within graphene domains by means of transition-metal-driven catalytic etching. This methodology may work as a simple and convenient way to determine graphene size and crystal orientation, and may enable the etching of graphene into smooth and ordered zigzag edge nanoribbons without compromising the quality of graphene.

Phonons and thermal transport in graphene and graphene-based materials

A discovery of the unusual thermal properties of graphene stimulated experimental, theoretical and computational research directed at understanding phonon transport and thermal conduction in two-dimensional material systems. We provide a critical review of recent results in the graphene thermal field focusing on phonon dispersion, specific heat, thermal conductivity, and comparison of different models and computational approaches. The correlation between the phonon spectrum in graphene-based materials and the heat conduction properties is analyzed in details. The effects of the atomic plane rotations in bilayer graphene, isotope engineering, and relative contributions of different phonon dispersion branches are discussed. For readers' convenience, the summaries of main experimental and theoretical results on thermal conductivity as well as phonon mode contributions to thermal transport are provided in the form of comprehensive annotated tables.

Fabrication and molecular dynamics analyses of highly thermal conductive reduced graphene oxide films at ultra-high temperatures

Thin films with high thermal conductivity are urgently needed as heat dissipation materials for electronic devices. In this study, we developed a readily scalable roller coating method followed by ultra-high temperature annealing to prepare large-sized, free-standing, and flexible reduced graphene oxide (rGO) films with high thermal conductivity. The in-plane thermal conductivity measured by a laser flash method for the sample annealed at 2800 °C was 826.0 W m^-1 K^-1, which was much higher than that of copper foil. X-ray diffraction, Raman, and SEM analyses indicated that, different from common chemical reduction, heat treatment at high temperature could not only remove O, H, and other impure elements but also develop the in-plane crystal size of graphene and decrease the interlayer spacing of graphene sheets. Meanwhile, tight embedding during annealing and concomitant mechanical impaction was indispensable for retaining the shape and raising the density of the films. Furthermore, molecular dynamics analyses demonstrated that point defects, pentagonal/heptagonal defects, or even large in-plane holes in graphene could be rehabilitated to a great extent during ultra-high temperature annealing. In addition, real-time temperature monitoring demonstrated that the rGO films could act as an excellent thermal dissipation material in LED packages by reducing 10%-15% of the temperature increase.

Thermal conductivity of graphene with defects induced by electron beam irradiation

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ∼7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 10(10) cm(-2) to 1.8 × 10(11) cm(-2) the thermal conductivity decreases from ∼(1.8 ± 0.2) × 10(3) W mK(-1) to ∼(4.0 ± 0.2) × 10(2) W mK(-1) near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ∼400 W mK(-1). The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.

Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm³, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

Thermal conductivity of a two-dimensional phosphorene sheet: a comparative study with graphene

A recently discovered two-dimensional (2D) layered material phosphorene has attracted considerable interest as a promising p-type semiconducting material. In this work, thermal conductivity (κ) of monolayer phosphorene is calculated using large-scale classical non-equilibrium molecular dynamics (NEMD) simulations. The predicted thermal conductivities for infinite length armchair and zigzag phosphorene sheets are 63.6 and 110.7 W m(-1) K(-1) respectively. The strong anisotropic thermal transport is attributed to the distinct atomic structures at altered chiral directions and direction-dependent group velocities. Thermal conductivities of 2D graphene sheets with the same dimensions are also computed for comparison. The extrapolated κ of the 2D graphene sheet are 1008.5(+37.6)(-37.6) and 1086.9(+59.1)(-59.1) W m(-1) K(-1) in the armchair and zigzag directions, respectively, which are an order of magnitude higher than those of phosphorene. The overall and decomposed phonon density of states (PDOS) are calculated in both structures to elucidate their thermal conductivity differences. In comparison with graphene, the vibrational frequencies that can be excited in phosphorene are severely limited. The temperature effect on the thermal conductivity of phosphorene and graphene sheets is investigated, which reveals a monotonic decreasing trend for both structures.

Unusual Enhancement in Intrinsic Thermal Conductivity of Multilayer Graphene by Tensile Strains

Using the Boltzmann-Peierls equation for phonon transport approach with the inputs of interatomic force constants from the self-consistent charge density functional tight binding method, we calculate the room-temperature in-plane lattice thermal conductivities k of multilayer graphene (up to four layers) and graphite under different isotropic tensile strains. The calculated in-plane k of graphite, finite monolayer graphene and 3-layer graphene agree well with previous experiments. For unstrained graphene systems, both the intrinsic k and the extent of the diffusive transport regime present a drastic dimensional transition in going from monolayer to 2-layer graphene and thereafter a gradual transition to the graphite limit. We find a peak enhancement of intrinsic k for multilayer graphene and graphite with increasing strain with the largest enhancement amplitude ∼40%. Competition between the decreased mode heat capacities and the increased lifetimes of flexural phonons with increasing strain contribute to this k behavior. Similar k behavior is observed for 2-layer hexagonal boron nitride systems. This study provides insights into engineering k of multilayer graphene and boron nitride by strain and into the nature of thermal transport in quasi-two-dimensional and highly anisotropic systems.

Engineering of the thermodynamic properties of bilayer graphene by atomic plane rotations: the role of the out-of-plane phonons

We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional belief the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the frequencies as low as ∼100 cm(-1). This leads to the frequency-dependent ZA phonon density of states and the breakdown of the linear dependence of the specific heat on temperature T. We established that ZA phonons determine the specific heat for T ≤ 200 K while contributions from both in-plane and out-of-plane acoustic phonons are dominant for 200 K ≤ T ≤ 500 K. In the high-temperature limit, T > 1000 K, the optical and acoustic phonons contribute approximately equally to the specific heat. The Debye temperature for graphene and twisted bilayer graphene was calculated to be around ∼1861-1864 K. Our results suggest that the thermodynamic properties of materials such as bilayer graphene can be controlled at the atomic scale by rotation of the sp(2)-carbon planes.

Size and edge roughness dependence of thermal conductivity for vacancy-defective graphene ribbons

By incorporating the phonon–phonon scattering, phonon-boundary scattering and phonon-vacancy scattering into the linearized Boltzmann transport equation, we theoretically investigate the effects of size and edge roughness on thermal conductivity of single vacancy-defective graphene ribbons.