Electric field control of magnetism in multiferroic heterostructures

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)0.7Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

Lossless Spin-Orbit Torque in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator MnBi_{2}Te_{4} of a few septuple-layer thick in charge-neutral condition, which exhibits pronounced layer-resolved characteristics and even-odd contrast. Contrary to traditional current-induced torques, our SOT is not accompanied by Ohm's currents, thus being devoid of Joule heating. We study the SOT-induced magnetic resonances, where in the tri-septuple-layer case we identify a peculiar exchange mode that is blind to microwaves but can be exclusively driven by the predicted SOT. As an inverse effect, the dynamical magnetic moments generate a pure adiabatic current, which occurs concomitantly with the SOT and gives rise to an overall reactance for the MnBi_{2}Te_{4}, enabling a lossless conversion of electric power into magnetic dynamics.

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications.

Strategies to quench quantum tunneling of magnetization in lanthanide single molecule magnets

Enhancing blocking temperature (T_B) is one of the holy grails in Single Molecule Magnets(SMMs), as any future potential application in this class of molecules is directly correlated to this parameter. Among many factors contributing to a reduction of T_B value, Quantum Tunnelling of Magnetisation (QTM), a phenomenon that is a curse or a blessing based on the application sought after, tops the list. Theoretical tools based on density functional and ab initio CASSCF/RASSI-SO methods have played a prominent role in estimating various spin Hamiltonian parameters and establishing the mechanism of magnetization relaxation in this class of molecules. Particularly, various strategies to quench QTM effects go hand-in-hand with experiments, and different methods proposed to quell QTM effects are scattered in the literature. In this perspective, we have explored various approaches that are proposed in the literature to quench QTM effects, and these include the role of (i) local symmetry of lanthanides, (ii) super-exchange interaction in {3d-4f} complexes, (iii) direct-exchange interaction in {radical-4f} and metal-metal bonded complexes to suppress the QTM, (iv) utilizing external stimuli such as an electric field or pressure to modulate the QTM and (v) avoiding QTM effects by stabilising toroidal states in 4f and {3d-4f} clusters. We believe the strategies summarized here will help to design new-generation SMMs.

Controlling Magnetism with Light in a Zero Orbital Angular Momentum Antiferromagnet

Antiferromagnetic materials feature intrinsic ultrafast spin dynamics, making them ideal candidates for future magnonic devices operating at THz frequencies. A major focus of current research is the investigation of optical methods for the efficient generation of coherent magnons in antiferromagnetic insulators. In magnetic lattices endowed with orbital angular momentum, spin-orbit coupling enables spin dynamics through the resonant excitation of low-energy electric dipoles such as phonons and orbital resonances which interact with spins. However, in magnetic systems with zero orbital angular momentum, microscopic pathways for the resonant and low-energy optical excitation of coherent spin dynamics are lacking. Here, we consider experimentally the relative merits of electronic and vibrational excitations for the optical control of zero orbital angular momentum magnets, focusing on a limit case: the antiferromagnet manganese phosphorous trisulfide (MnPS_{3}), constituted by orbital singlet Mn^{2+} ions. We study the correlation of spins with two types of excitations within its band gap: a bound electron orbital excitation from the singlet orbital ground state of Mn^{2+} into an orbital triplet state, which causes coherent spin precession, and a vibrational excitation of the crystal field that causes thermal spin disorder. Our findings cast orbital transitions as key targets for magnetic control in insulators constituted by magnetic centers of zero orbital angular momentum.

Controlling the Magneto-Optical Response in Ultrathin Films of EuO1-x via Interface Engineering with Ferroelectric BaTi2O5

Utilizing pulsed laser deposition, a film of EuO1-x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi2O5 thin film on top of the EuO1-x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi2, which suggests Si or Eu diffuses across the MgO buffer layer. EuO1-x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi2O5 films grown on the EuO1-x films. The antiferromagnetic behavior is not seen in thicker EuO1-x thin films when integrated with other ferroelectric (FE) phases of the BaO-TiO2 system, suggesting an origin in the perturbed charge population at the BaTi2O5/EuO1-x interface.

Significant Reduction of the Dead Layers by the Strain Release in La0.7Sr0.3MnO3 Heterostructures

Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La_0.7Sr_0.3MnO₃ (LSMO) grown on LaAlO₃ (LAO) substrates, via strain engineering by inserting a Sr₃Al₂O₆ buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.

In silico assessment of electrophysiological neuronal recordings mediated by magnetoelectric nanoparticles

Magnetoelectric materials hold untapped potential to revolutionize biomedical technologies. Sensing of biophysical processes in the brain is a particularly attractive application, with the prospect of using magnetoelectric nanoparticles (MENPs) as injectable agents for rapid brain-wide modulation and recording. Recent studies have demonstrated wireless brain stimulation in vivo using MENPs synthesized from cobalt ferrite (CFO) cores coated with piezoelectric barium titanate (BTO) shells. CFO–BTO core–shell MENPs have a relatively high magnetoelectric coefficient and have been proposed for direct magnetic particle imaging (MPI) of brain electrophysiology. However, the feasibility of acquiring such readouts has not been demonstrated or methodically quantified. Here we present the results of implementing a strain-based finite element magnetoelectric model of CFO–BTO core–shell MENPs and apply the model to quantify magnetization in response to neural electric fields. We use the model to determine optimal MENPs-mediated electrophysiological readouts both at the single neuron level and for MENPs diffusing in bulk neural tissue for in vivo scenarios. Our results lay the groundwork for MENP recording of electrophysiological signals and provide a broad analytical infrastructure to validate MENPs for biomedical applications.

Topological spintronics and magnetoelectronics

Topological electronic materials, such as topological insulators, are distinct from trivial materials in the topology of their electronic band structures that lead to robust, unconventional topological states, which could bring revolutionary developments in electronics. This Perspective summarizes developments of topological insulators in various electronic applications including spintronics and magnetoelectronics. We group and analyse several important phenomena in spintronics using topological insulators, including spin-orbit torque, the magnetic proximity effect, interplay between antiferromagnetism and topology, and the formation of topological spin textures. We also outline recent developments in magnetoelectronics such as the axion insulator and the topological magnetoelectric effect observed using different topological insulators.

Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures

Nonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions.

Electric field control of magnon spin currents in an antiferromagnetic insulator

Pure spin currents can be generated via thermal excitations of magnons. These magnon spin currents serve as carriers of information in insulating materials, and controlling them using electrical means may enable energy efficient information processing. Here, we demonstrate electric field control of magnon spin currents in the antiferromagnetic insulator Cr₂O₃. We show that the thermally driven magnon spin currents reveal a spin-flop transition in thin-film Cr₂O₃. Crucially, this spin-flop can be turned on or off by applying an electric field across the thickness of the film. Using this tunability, we demonstrate electric field–induced switching of the polarization of magnon spin currents by varying only a gate voltage while at a fixed magnetic field. We propose a model considering an electric field–dependent spin-flop transition, arising from a change in sublattice magnetizations via a magnetoelectric coupling. These results provide a different approach toward controlling magnon spin current in antiferromagnets.

Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface

Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO₂-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, a strong charge-mediated magnetoelectric coupling at the Ni/HfO₂ interface has been predicted using density functional theory calculations. Here, we report on the experimental evidence of such magnetoelectric coupling at the Ni/Hf_0.5Zr_0.5O₂(HZO) interface. Using a combination of operando XAS/XMCD and HAXPES/MCDAD techniques, we probe element-selectively the local magnetic properties at the Ni/HZO interface in functional Au/Co/Ni/HZO/W capacitors and demonstrate clear evidence of the ferroelectric polarization effect on the magnetic response of a nanometer-thick Ni marker layer. The observed magnetoelectric effect and the electronic band lineup of the Ni/HZO interface are interpreted based on the results of our theoretical modeling. It elucidates the critical role of an ultrathin NiO interlayer, which controls the sign of the magnetoelectric effect as well as provides a realistic band offset at the Ni/HZO interface, in agreement with the experiment. Our results hold promise for the use of ferroelectric HfO₂-based composite multiferroics for the design of multifunctional devices compatible with modern semiconductor technology.

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn_1/3Nb_2/3O₃)_1−x-(PbTiO₃)_x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

Proton switching molecular magnetoelectricity

The convergence of proton conduction and multiferroics is generating a compelling opportunity to achieve strong magnetoelectric coupling and magneto-ionics, offering a versatile platform to realize molecular magnetoelectrics. Here we describe machine learning coupled with additive manufacturing to accelerate the design strategy for hydrogen-bonded multiferroic macromolecules accompanied by strong proton dependence of magnetic properties. The proton switching magnetoelectricity occurs in three-dimensional molecular heterogeneous solids. It consists of a molecular magnet network as proton reservoir to modulate ferroelectric polarization, while molecular ferroelectrics charging proton transfer to reversibly manipulate magnetism. The magnetoelectric coupling induces a reversible 29% magnetization control at ferroelectric phase transition with a broad thermal hysteresis width of 160 K (192 K to 352 K), while a room-temperature reversible magnetic modulation is realized at a low electric field stimulus of 1 kV cm⁻¹. The findings of electrostatic proton transfer provide a pathway of proton mediated magnetization control in hierarchical molecular multiferroics.

Compared to inorganic materials, the magnetoelectric coupling in macromolecules is still hidden. Here, the authors describe machine learning coupled with additive manufacturing to accelerate the discovery of multiferroic macromolecules with a proton-mediated magnetoelectric coupling effect.

Ferroelectric Self-Polarization Controlled Magnetic Stratification and Magnetic Coupling in Ultrathin La0.67Sr0.33MnO3 Films

Multiferroic oxide heterostructures consisting of ferromagnetic and ferroelectric components hold the promise for nonvolatile magnetic control via ferroelectric polarization, advantageous for the low-dissipation spintronics. Modern understanding of the magnetoelectric coupling in these systems involves structural, orbital, and magnetic reconstructions at interfaces. Previous works have long proposed polarization-dependent interfacial magnetic structures; however, direct evidence is still missing, which requires advanced characterization tools with near-atomic-scale spatial resolutions. Here, extensive polarized neutron reflectometry (PNR) studies have determined the magnetic depth profiles of PbZr_0.2Ti_0.8O₃/La_0.67Sr_0.33MnO₃ (PZT/LSMO) bilayers with opposite self-polarizations. When the LSMO is 2-3 nm thick, the bilayers show two magnetic transitions on cooling. However, temperature-dependent magnetization is different below the lower-temperature transition for opposite polarizations. PNR finds that the LSMO splits into two magnetic sublayers, but the inter-sublayer magnetic couplings are of opposite signs for the two polarizations. Near-edge X-ray absorption spectroscopy further shows contrasts in both the Mn valences and the Mn-O bond anisotropy between the two polarizations. This work completes the puzzle for the magnetoelectric coupling model at the PZT/LSMO interface, showing a synergic interplay among multiple degrees of freedom toward emergent functionalities at complex oxide interfaces.

Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films

Bismuth ferrite (BiFeO₃ ) has recently become interesting as a room-temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low-cost and simple processing technique for large-area and high-quality BiFeO₃ thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO₃ thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical-route-derived BiFeO₃ thin films, the challenges of these films are highlighted. An all-solution chemical-solution deposition (AS-CSD) for BiFeO₃ thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low-cost route to prepare large-area high-quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO₃ thin films.

Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

Strain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

Quantitative Study of the Energy Changes in Voltage-Controlled Spin Crossover Molecular Thin Films

Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{H₂B(pz)₂}₂(bipy)] (pz = tris(pyrazol-1-1y)-borohydride, bipy = 2,2'-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high-spin and low-spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only nonvolatile voltage control of the spin state ("write") but also current sensing of the molecular spin state ("read"). Monte Carlo Ising model simulations of the high-spin state occupancy, extracted from X-ray absorption spectroscopy, indicate that the energy difference between the low-spin and high-spin state is modified by 110 meV. Transport measurements demonstrate that four terminal voltage-controlled devices can be realized using this system.

Reversible control of magnetism in FeRh thin films

The multilayer of approximate structure MgO(100)/[nFe51Rh49(63 Å)/57Fe51Rh49(46 Å)]10 deposited at 200 °C is primarily of paramagnetic A1 phase and is fully converted to the magnetic B2 phase by annealing at 300 °C for 60 min. Subsequent irradiation by 120 keV Ne+ ions turns the thin film completely to the paramagnetic A1 phase. Repeated annealing at 300 °C for 60 min results in 100% magnetic B2 phase, i.e. a process that appears to be reversible at least twice. The A1 → B2 transformation takes place without any plane-perpendicular diffusion while Ne+ irradiation results in significant interlayer mixing.

Magnetoelectric Coupling Induced Orbital Reconstruction and Ferromagnetic Insulating State in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 Heterostructures

Novel phenomena at the ferromagnetic/ferroelectric interface have generated much interest. Here, a ferromagnetic insulating state with the Curie temperature about 268-286 K in PbZr_0.52Ti_0.48O₃/La_0.67Sr_0.33MnO₃ heterostructures is induced and modulated by varying the PbZr_0.52Ti_0.48O₃ thickness. An abnormally enlarged c/a ratio in La_0.67Sr_0.33MnO₃ by strain-based coupling effect leads to d_3z²-r² orbital preferable occupancy. This orbital reconstruction modulates effective electron transfer and finally leads to a ferromagnetic insulating state. Valence change induced by charge-based coupling effect could be partially responsible for change in the Curie temperature in the strongly correlated electron system of La_1-xSr_xMnO₃. This work provides a deeper understanding of strain effects near the ferromagnetic/ferroelectric interface, especially in a PbZr_1-yTi_yO₃/La_1-xSr_xMnO₃ heterostructure system.

Growth of High-Quality Superconducting FeSe0.5Te0.5 Films on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 and Electric-Field Modulation of Superconductivity

Heterostructures composed of superconductor and ferroelectrics (SC/FE) are very important for manipulating the superconducting property and applications. However, growth of high-quality superconducting iron chalcogenide films is challenging because of their volatility and FE substrate with rough surface and large lattice mismatch. Here, we report a two-step growth approach to get high-quality FeSe_0.5Te_0.5 (FST) films on FE Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ with large lattice mismatch, which show superconductivity at only around 10 nm. Through a systematic study of structural and electric transport properties of samples with different thicknesses, a mechanism to grow high-quality FST is discovered. Moreover, electric-field-induced remarkable change of T_c (superconducting transition temperature) is demonstrated in a 20 nm FST film. This work paves the way to grow high-quality films which contain volatile element and have large lattice mismatch with the substrate. It is also helpful for manipulating the superconducting property in SC/FE heterostructures.

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach for achieving ultralow power spintronic devices via suppressing Joule heating. Here, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, is comprehensively reviewed. Various emergent topics such as the Néel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, 2D magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons is highlighted. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

Homogenization method for microscopic characterization of the composite magnetoelectric multiferroics

Tuning of magnetization or electrical polarization using external fields other than their corresponding conjugate fields (i.e., magnetic field for the former or electric field for the latter response) attracts renewed interest due to its potential for applications. The magnetoelectric effect in multiferroic 1-3 composite composed of alternating magnetic and ferroelectric layers operating in linear regime consequent to external biasing fields is simulated and analysed theoretically. Two-scale homogenization procedure to arrive at the equilibrium overall physical properties of magnetoelectric multiferroic composite is formulated using variational analysis. This procedure is extended to quantify the underlying local (microscopic) electric, magnetic and elastic fields and thereby compute local distribution of stresses and strains, electrical and magnetic potentials, the electric and magnetic fields as well as the equivalent von Mises stresses. The computational model is implemented by modifying the software POSTMAT (material postprocessing). Computed local stress/strain profiles and the von Mises stresses consequent to biasing electrical and magnetic fields provide insightful information related to the magnetostriction and the ensuing electrical and magnetic polarization. Average polarization and magnetization against magnetic and electric fields respectively are computed and found to be in reasonable limits of the experimental results on similar composite systems. The homogenization model covers multiferroics and its composites regardless of crystallographic symmetry (with the caveat of assuming an ideal and semi-coherent interface connecting the constituent phases) and offer computational efficiency besides unveiling the nature of the underlying microscopic field characteristics.

Electric-Field-Enhanced Bulk Perpendicular Magnetic Anisotropy in GdFe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Perpendicular magnetic anisotropy is important for increasing the information storage density in the perpendicular magnetic recording media, and for rare-earth-transition-metal alloys with bulk perpendicular magnetic anisotropy that generate great research interest due to their abundant interesting phenomena, such as fast domain wall motion and skyrmion. Here, we deposit amorphous GdFe ferrimagnetic films on Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ ferroelectric substrate and investigate the effect of electric-field-induced piezostrain on its bulk perpendicular magnetic anisotropy. The anomalous Hall effect and polar Kerr image measurements suggest an enhanced bulk perpendicular magnetic anisotropy by electric field, which originates from a positive magnetoelastic anisotropy due to the positive magnetostriction coefficient of the GdFe film and the electric-field-induced tensile strain along the z axis in Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ ferroelectric substrate. Our results enrich the electrical control of perpendicular magnetic anisotropy and are useful for designing spintronic devices based on perpendicular magnetic anisotropy.

Full voltage manipulation of the resistance of a magnetic tunnel junction

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

Polarization Control of the Interface Ferromagnetic to Antiferromagnetic Phase Transition in Co/Pb(Zr,Ti)O3

Based on first-principles calculations, we predict the polarization control of the interfacial magnetic phase and a giant electronically driven magnetoelectric coupling (MEC) in Co/PbZr_0.25Ti_0.75O₃ (PZT)(001). The effect of Co oxidation at the interface shared with (Zr,Ti)O₂-terminated PZT is evidenced. The magnetic phase of the oxidized Co interface layer is electrically switched from the ferromagnetic to the antiferromagnetic state by reversing the PZT polarization from upward to downward, respectively. A comparative study between oxidized and unoxidized Co/PZT interfaces shows that in oxidized Co/PZT bilayers, the variation of the interface spin moment upon polarization reversal exceeds that of unoxidized Co/PZT bilayers by about 1 order of magnitude. We define a surface MEC constant α_S taking into account the polarization dependence of both the spin and orbital moments. In unoxidized Co/PZT bilayers, we obtain α_S ≈ 2 × 10^-10 G cm² V^-1, while a giant surface coupling α_S ≈ 12 × 10^-10 G cm² V^-1 is found in the case of oxidized Co/PZT. We demonstrate that the polarization control of the magnetocrystalline anisotropy via spin-orbit coupling is not only effective at the interface but it extends to the Co film despite the interface origin of the MEC. This study shows that tailoring the nature of atomic bonding and electron occupancies allows for improving the performance of functional interfaces, enabling an efficient electric field control of spin-orbit interactions. Moreover, the nonlocal character of this effect holds promising perspectives for the application of electronically driven interface MEC in spin-orbitronic devices.

Anomalous Behaviors of Spin Waves Studied by Inelastic Light Scattering

Magnonics, an emerging research field, aims to control and manipulate spin waves in magnetic materials and structures. However, the current understanding of spin waves remains quite limited. This review attempts to provide an overview of the anomalous behaviors of spin waves in various types of magnetic materials observed thus far by inelastic light scattering experiments. The anomalously large asymmetry of anti-Stokes to Stokes intensity ratio, broad linewidth, strong resonance effect, unique polarization selection, and abnormal impurity dependence of spin waves are discussed. In addition, the mechanisms of these anomalous behaviors of spin waves are proposed.

Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure

Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices with low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here, we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The electric field controls the phononic ac Stark effect-the indirect exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1V bias across the heterostructure.

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.

Colossal tunability in high frequency magnetoelectric voltage tunable inductors

The electrical modulation of magnetization through the magnetoelectric effect provides a great opportunity for developing a new generation of tunable electrical components. Magnetoelectric voltage tunable inductors (VTIs) are designed to maximize the electric field control of permeability. In order to meet the need for power electronics, VTIs operating at high frequency with large tunability and low loss are required. Here we demonstrate magnetoelectric VTIs that exhibit remarkable high inductance tunability of over 750% up to 10 MHz, completely covering the frequency range of state-of-the-art power electronics. This breakthrough is achieved based on a concept of magnetocrystalline anisotropy (MCA) cancellation, predicted in a solid solution of nickel ferrite and cobalt ferrite through first-principles calculations. Phase field model simulations are employed to observe the domain-level strain-mediated coupling between magnetization and polarization. The model reveals small MCA facilitates the magnetic domain rotation, resulting in larger permeability sensitivity and inductance tunability.

Coercivity Modulation in Fe-Cu Pseudo-Ordered Porous Thin Films Controlled by an Applied Voltage: A Sustainable, Energy-Efficient Approach to Magnetoelectrically Driven Materials

Fe-Cu films with pseudo-ordered, hierarchical porosity are prepared by a simple, two-step procedure that combines colloidal templating (using sub-micrometer-sized polystyrene spheres) with electrodeposition. The porosity degree of these films, estimated by ellipsometry measurements, is as high as 65%. The resulting magnetic properties can be controlled at room temperature using an applied electric field generated through an electric double layer in an anhydrous electrolyte. This material shows a remarkable 25% voltage-driven coercivity reduction upon application of negative voltages, with excellent reversibility when a positive voltage is applied, and a short recovery time. The pronounced reduction of coercivity is mainly ascribed to electrostatic charge accumulation at the surface of the porous alloy, which occurs over a large fraction of the electrodeposited material due to its high surface-area-to-volume ratio. The emergence of a hierarchical porosity is found to be crucial because it promotes the infiltration of the electrolyte into the structure of the film. The observed effects make this material a promising candidate to boost energy efficiency in magnetoelectrically actuated devices.

Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures

Electrically driven magnetic switching (EDMS) is highly demanded for next-generation advanced memories or spintronic devices. The key challenge is to achieve repeatable and reversible EDMS at sufficiently small scale. In this work, we reported an experimental realization of room-temperature, electrically driven, reversible, and robust 120° magnetic state rotation in nanoscale multiferroic heterostructures consisting of a triangular Co nanomagnet array on tetragonal BiFeO₃ films, which can be directly monitored by magnetic force microscope (MFM) imaging. The observed reversible magnetic switching in an individual nanomagnet can be triggered by a small electric pulse within 10 V with an ultrashort time of ∼10 ns, which also demonstrates sufficient switching cycling and months-long retention lifetime. A mechanism based on synergic effects of interfacial strain and exchange coupling plus shape anisotropy was also proposed, which was also verified by micromagnetic simulations. Our results create an avenue to engineer the nanoscale EDMS for low-power-consumption, high-density, nonvolatile magnetoelectric memories and beyond.

Magnetic-field-induced dielectric behaviors and magneto-electrical coupling of multiferroic compounds containing cobalt ferrite/barium calcium titanate composite fibers

Multiferroics have broad application prospects in various fields such as multi-layer ceramic capacitors and multifunctional devices owing to their high dielectric constants and coupled magnetic and ferroelectric properties at room temperature. In this study, cobalt ferrite (CFO)/barium calcium titanate (BCT) composite fibers are prepared from BCT and CFO sols by an electrospinning method, and are then oriented by magnetic fields and sintered at high temperatures. The effects of magnetic fields and CFO contents on the nanostructures and magnetoelectric properties of the composites are investigated. Strong coupling between magnetic and ferroelectric properties occurs in CFO/BCT composites with magnetic orientation. More interestingly, the dielectric constants of CFO/BCT composites with magnetic orientation are found to be enhanced (by ∼1.5-3.5 times) as compared with those of BCT and CFO/BCT without magnetic orientation. The boost of dielectric constants of magnetic-field orientated CFO/BCT is attributed to the magneto-electrical coupling between CFO and BCT, where the polar domains of BCT are pinned by the orientated CFO. Therefore, this work not only provides a novel and effective approach in enhancing the dielectric constants of ceramic ferroelectrics, which is of tremendous value for industrial applications, but also elucidates the interaction mechanisms between ferromagnetic phase and ferroelectric phase in multiferroic compounds.

Switching of Magnons by Electric and Magnetic Fields in Multiferroic Borates

Electric manipulation of magnetic properties is a key problem of materials research. To fulfill the requirements of modern electronics, these processes must be shifted to high frequencies. In multiferroic materials, this may be achieved by electric and magnetic control of their fundamental excitations. Here we identify magnetic vibrations in multiferroic iron borates that are simultaneously sensitive to external electric and magnetic fields. Nearly 100% modulation of the terahertz radiation in an external field is demonstrated for SmFe_{3}(BO_{3})_{4}. High sensitivity can be explained by a modification of the spin orientation that controls the excitation conditions in multiferroic borates. These experiments demonstrate the possibility to alter terahertz magnetic properties of materials independently by external electric and magnetic fields.

Magnetoelectricity of CoFe2O4 and tetragonal phase BiFeO3 nanocomposites prepared by pulsed laser deposition

The coupling between the tetragonal phase (T-phase) of BiFeO₃ (BFO) and CoFe₂O₄ (CFO) in magnetoelectric heterostructures has been studied. Bilayers of CFO and BFO were deposited on (001) LaAlO₃ single crystal substrates by pulsed laser deposition. After 30 min of annealing, the CFO top layer exhibited a T-phase-like structure, developing a platform-like morphology with BFO. Magnetic hysteresis loops exhibited a strong thickness effect of the CFO layer on the coercive field, in particular along the out-of-plane direction. Magnetic force microscopy images revealed that the T-phase CFO platform contained multiple magnetic domains, which could be tuned by applying a tip bias. A combination of shape, strain, and exchange coupling effects are used to explain the observations.

Electric field control of magnetization reorientation in Co/Pb (Mg1/3Nb2/3)-PbTiO3 heterostructure

Herein, we demonstrated an apparent electric field control of magnetization reorientation at room temperature, through a strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructure. As the applied electric field increased, the magnetization tended to deviate from the original direction, which was induced by nonlinear strain vs electric-field behavior from the ferroelectric substrates. Ferromagnetic resonance showed that the in-plane magnetic easy axis of the Co film was shifted sharply with electric field E = 10 kV/cm, which indicates that the in-plane uniaxial magnetic anisotropy of the Co film can be inverted via the application of an electric field. These results demonstrated that converse magnetoelectric effect in the FM/FE heterostructure was indeed a feasible method to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.

Correlation between tunability and anisotropy in magnetoelectric voltage tunable inductor (VTI)

Electric field modulation of magnetic properties via magnetoelectric coupling in composite materials is of fundamental and technological importance for realizing tunable energy efficient electronics. Here we provide foundational analysis on magnetoelectric voltage tunable inductor (VTI) that exhibits extremely large inductance tunability of up to 1150% under moderate electric fields. This field dependence of inductance arises from the change of permeability, which correlates with the stress dependence of magnetic anisotropy. Through combination of analytical models that were validated by experimental results, comprehensive understanding of various anisotropies on the tunability of VTI is provided. Results indicate that inclusion of magnetic materials with low magnetocrystalline anisotropy is one of the most effective ways to achieve high VTI tunability. This study opens pathway towards design of tunable circuit components that exhibit field-dependent electronic behavior.

Influence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O₃ Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy

In this work, we have studied the microstructures, nanodomains, polarization preservation behaviors, and electrical properties of BiFe_0.95Mn_0.05O₃ (BFMO) multiferroic thin films, which have been epitaxially created on the substrates of SrRuO₃, SrTiO₃, and TiN-buffered (001)-oriented Si at different oxygen pressures via piezoresponse force microscopy and conductive atomic force microscopy. We found that the pure phase state, inhomogeneous piezoresponse force microscopy (PFM) response, low leakage current with unidirectional diode-like properties, and orientation-dependent polarization reversal properties were found in BFMO thin films deposited at low oxygen pressure. Meanwhile, these films under high oxygen pressures resulted in impurities in the secondary phase in BFMO films, which caused a greater leakage that hindered the polarization preservation capability. Thus, this shows the important impact of the oxygen pressure on modulating the physical effects of BFMO films.

Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure

In the current information society, the realization of a magnetic storage technique with energy-efficient design and high storage density is greatly desirable. Here, we demonstrate that, without bias magnetic field, different values of remanent magnetization (M_r) can be obtained in a FePt/0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT) heterostructure by applying a unipolar electric field across the substrate. These multilevel magnetic signals can serve as writing data bits in a storage device, which remarkably increases the storage density. As for the data reading, these multilevel M_r values can be read nondestructively and distinguishably using a commercial giant magnetoresistance magnetic sensor by converting the magnetic signal to voltage signal. Furthermore, these multilevel voltage signals show good retention and switching property, which enables promising applications in electric-writing magnetic-reading memory devices with low power consumption and high storage density.

Raman evidence for presence of high-temperature ferromagnetic clusters in magnetodielectric compound Ba-doped La2NiMnO6

Magnetodielectric ferromagnetic semiconductors are key materials because of their applications in spintronic devices; they can be used to control the magnetic properties by applying electric fields. La₂NiMnO₆ emerged as an important magnetodielectric ferromagnetic semiconductor because of its high Curie temperature near room temperature. Recently Ba doped was successfully used to improve magnetic properties in La₂NiMnO₆, originating partially ordered systems with different ordering degrees but presenting same T_c=280K. However, the influence of Ba doping on the temperature dependent vibrational properties of the system was not investigated. To investigate the Ba doping influence on temperature dependent phonon spectra in La₂NiMnO₆, we used Raman Spectroscopy to probe the symmetric stretching mode behavior in the range from 10 to 600K. Remarkable softenings were detected in the phonon behavior due to spin phonon coupling, at several different temperatures, much above Tc. The FWHM dependence with temperature rules out magnetostriction effects. The phonon softenings are the largest reported so far for the RE₂NiMnO₆ systems and also indicate that Ba doping induces ordering in the Ni/Mn sites. The temperature discordance in characteristic softening onset of the spin phonon coupling are related to ferromagnetic short range clusters due the presence of Ni³⁺, Mn³⁺ oxidation states.

Interface-induced spontaneous positive and conventional negative exchange bias effects in bilayer La0.7Sr0.3MnO3/Eu0.45Sr0.55MnO3 heterostructures

We report zero-field-cooled spontaneous-positive and field-cooled conventional-negative exchange bias effects in epitaxial bilayer composed of La_0.7Sr_0.3MnO₃ (LSMO) with ferromagnetic (FM) and Eu_0.45Sr_0.55MnO₃ (ESMO) with A-type antiferromagnetic (AF) heterostructures respectively. A temperature dependent magnetization study of LSMO/ESMO bilayers grown on SrTiO₃ (001) manifest FM ordering (T_C) of LSMO at ~320 K, charge/orbital ordering of ESMO at ~194 K and AF ordering (T_N) of ESMO at ~150 K. The random field Ising model has demonstrated an interesting observation of inverse dependence of exchange bias effect on AF layer thickness due to the competition between FM-AF interface coupling and AF domain wall energy. The isothermally field induced unidirectional exchange anisotropy formed at the interface of FM-LSMO layer and the kinetically phase-arrested magnetic phase obtained from the metamagnetic AF-ESMO layer could be responsible for the spontaneous exchange bias effect. Importantly, no magnetic poling is needed, as necessary for the applications. The FM-AF interface exchange interaction has been ascribed to the AF coupling with \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sum {J}_{ex}\vec{{S}_{{\rm{FM}}}}\cdot \vec{{S}_{{\rm{AF}}}}$$\end{document}∑JexSFM⃗⋅SAF⃗ (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${J}_{ex}\approx {J}_{AF}$$\end{document}Jex≈JAF, coupling constant between AF spins) for the spontaneous positive hysteresis loop shift, and the field-cooled conventional exchange bias has been attributed to the ferromagnetically exchanged interface with \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${J}_{ex}\approx {J}_{F}$$\end{document}Jex≈JF (coupling constant between FM spins).

Strain-Mediated Coexistence of Volatile and Nonvolatile Converse Magnetoelectric Effects in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructure

Strain-mediated ferromagnetic/ferroelectric (FE) heterostructures have played an important role in multiferroic materials to investigate the electric-field control of magnetism in the past decade, due to their excellent performances, such as room-temperature operation and large magnetoelectric (ME) coupling effect. Because of the different FE-switching-originated strain behaviors and varied interfacial coupling effect, both loop-like (nonvolatile) and butterfly-like (volatile) converse ME effects have been reported. Here, we investigate the electric-field control of magnetism in a multiferroic heterostructure composed of a polycrystalline Fe thin film and a Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ single crystal, and the experimental results exhibit complex behaviors, suggesting the coexistence of volatile and nonvolatile converse ME effects. By separating the symmetrical and antisymmetrical parts of the electrical modulation of magnetization, we distinguished the loop-like hysteresis and butterfly-like magnetization changes tuned by electric fields, corresponding to the strain effects related to the FE 109° switching and 71/180° switching, respectively. Further magnetic-field-dependent as well as angular-dependent investigation of the converse ME effect confirmed the strain-mediated magnetism involving competition among the Zeeman energy, magnetocrystalline anisotropy energy, and strain-generated magnetoelastic energy. This study is helpful for understanding the electric-field control of magnetism in multiferroic heterostructures as well as its relevant applications.

Multiple magnetoelectric coupling effect in BaTiO3/Sr2CoMoO6 heterostructures

Due to the demand of controlling magnetism by electric fields for future storage devices, materials with magnetoelectric coupling are of great interests. Based on first-principles calculations, we study the electronic and magnetic properties of a double perovskite Sr₂CoMoO₆ (SCMO) in a hybrid heterostructure combined with BaTiO₃ (BTO) in different polarization states. The calculations show that by introducing ferroelectric state in BTO, SCMO transforms from an antiferromagnetic semiconductor to a half-metal. Specially, altering the polarization direction not only controls the interfacial magnetic moment, but also changes the orbital occupancy of the Co-3d state. This novel multiple magnetoelectric coupling opens possibilities for designing new type of spintronic and microelectronic devices with controllable degree of freedom of interfacial electrons in the heterostructures.

Interface-induced multiferroism by design in complex oxide superlattices

Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La_2/3Sr_1/3MnO₃ (LSMO)/BaTiO₃ (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin-lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin-lattice coupling.

Electric-Field-Adjustable Time-Dependent Magnetoelectric Response in Martensitic FeRh Alloy

Steady or dynamic magnetoelectric response, selectable and adjustable by only varying the amplitude of the applied electric field, is found in a multiferroic FeRh/PMN-PT device. In-operando time-dependent structural, ferroelectric, and magnetoelectric characterizations provide evidence that, as in magnetic shape memory martensitic alloys, the observed distinctive magnetoelectric responses are related to the time-dependent relative abundance of antiferromagnetic-ferromagnetic phases in FeRh, unbalanced by voltage-controlled strain. This flexible magnetoelectric response can be exploited not only for energy-efficient memory operations but also in other applications, where multilevel and/or transient responses are required.

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt)3/PMN-PT Heterostructure

We report electric-field control of magnetism of (Co/Pt)₃ multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O₃-PbTiO₃ (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Intrinsic spatial inhomogeneity or phase separation in cuprates, manganites, etc., related to electronic and/or magnetic properties, has attracted much attention due to its significance in fundamental physics and applications. Here we use scanning Kerr microscopy and scanning electron microscopy with polarization analysis with in situ electric fields to reveal the existence of intrinsic spatial inhomogeneity of the magnetic response to an electric field on a mesoscale with the coexistence of looplike (nonvolatile) and butterfly-like (volatile) behaviors in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures. Both the experimental results and micromagnetic simulations suggest that these two behaviors come from the 109° and the 71°/180° FE domain switching, respectively, which have a spatial distribution. This FE domain-switching-controlled magnetism is significant for understanding the nature of FM/FE coupling on the mesoscale and provides a path for designing magnetoelectric devices through domain engineering.