High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

Improvement in Photoelectrochemical Water Splitting Performance of GaN-nanowire Photoanode Using MXene

The photoelectrochemical water splitting (PEC-WS) performance of a photoanode consisting of GaN nanowires (NWs) is significantly improved using a Ti3C2-MXene coating as an intermediate layer to promote carrier transfer toward the electrolyte. The maximum current density and applied-bias photon-to-current efficiency of the photoanode comprising GaN NWs coated with Ti3C2-MXene (MGNWs) are measured to be 34.24 mA/cm2 and 14.47% at 1.2 and 0.4 V versus a reversible hydrogen electrode (RHE), respectively. These values are much higher than those of the GaN-NW photoanode without Ti3C2-MXene (4.04 mA/cm2 and 1.95%) and also markedly exceed those of previously reported photoanodes. After 8 days of PEC-WS, the current density was measured to be 31.07 mA/cm2, which corresponds to 97.58% of that measured immediately after the reaction started. Based on the time dependence of the current density, the hydrogen evolution rate over the reaction time is calculated to be 0.58 mmol/cm2·h. The results confirm that the PEC-WS performance of the optimized MGNW photoanode is superior to and more stable than those of previously reported photoanodes.

Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires

We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm² at -1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at -0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.

Highly Efficient Photoelectrochemical Water Splitting Using GaN-Nanowire Photoanode with Tungsten Sulfides

In the present study, we have achieved high-performance photoelectrochemical water splitting (PEC-WS) using GaN nanowires (NWs) coated with tungsten sulfide (W_xS_1-x) (GaN-NW-W_xS_1-x) as a photoanode. The measured current density and applied-bias photon-to-current efficiency were 20.38 mA/cm² and 13.76%, respectively. These values were much higher than those reported previously for photoanodes with any kind of III-nitride nanostructure. The amount of hydrogen gas formed was 1.01 mmol/cm² from 7 h PEC-WS, which was also much higher than the previously reported values. The drastic improvement in the PEC-WS performance using the GaN-NW-W_xS_1-x photoanode was attributed to an increase in the number of photogenerated carriers due to the highly crystalline GaN NWs, and acceleration of separation of photogenerated carriers and consequent suppression of charge recombination because of nitrogen-terminated surfaces of NWs, sulfur vacancies in W_xS_1-x, and type-II band alignment between NW and W_xS_1-x. The degree of impedance matching, evaluated from Nyquist plots, was considered to analyze charge transfer characteristics at the interface between the GaN-NW-W_xS_1-x photoanode and 0.5-M H₂SO₄ electrolyte. Considering the material system and scheme for the PEC-WS, our approach provides an efficient way to improve hydrogen evolution reaction.

Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots

GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ∼3.9-fold (∼290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ∼1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider band gap p-MnO QDs to n-GaN NW can lead to substantial emission enhancement and greater radiative recombination contribution because of the good band alignment between MnO QDs and GaN NWs. This work provides valuable insights into an environmentally friendly strategy for improving UV device performance.

GaN nanowires grown by halide chemical vapour deposition as photoanodes for photo-electrochemical water oxidation reactions

Manifold morphologies of GaN nanowires (NWs) were fabricated using halide chemical vapour deposition (HCVD) on an n-Si (111) substrate and demonstrated to be a promising photoelectrode for photo-electrochemical (PEC) water splitting applications. We report a substantial enhancement in the photocurrent for vertically-grown GaN NWs on a buffer layer as compared to other counterparts such as GaN whiskers, tapered nanostructures and thin films. GaN NWs grown on Si have advantages due to the absorption of photons in a wide spectral range from ultraviolet to infrared and thus are directly involved in PEC reactions. A GaN NW photoanode was demonstrated with a saturation photocurrent density of 0.55 mA cm-2 under 1 sun of illumination, which is much greater than its counterparts. The role of the buffer layer and the carrier density on the PEC performance of vertically-grown GaN NW photoanodes is further elucidated. Photo-electrochemical impedance spectroscopy and Mott-Schottky characterizations were employed to further explain the PEC performance of GaN NW embedded photoanodes. Here, photoanodes based on diverse GaN nanostructures were examined for a better PEC evaluation in order to support the conclusion. The results may pave the way for the fabrication of efficient photoelectrodes and GaN as a protective layer against corrosion for improved photo-stability in an NaOH electrolyte for enhancing the efficiency of water splitting.

Fabrication of GaN truncated nanocone array using a pre-deposited metallic nano-hemispheres template for efficient solar water splitting

The GaN truncated nanocone is an excellent candidate for better photoelectrochemical efficiency than other GaN nanostructures. Here the highly ordered GaN truncated nanocone array was fabricated using a pre-deposited metallic nano-hemispheres template on a wafer scale. The highly ordered profiles of pre-deposited metallic nano-hemispheres template were defined by anodic aluminum oxide (AAO) masks through electron beam evaporation. The formation mechanism for the profiles of nano-hemispheres and GaN truncated nanocones were investigated. The results elucidate that proper selection of AAO parameters enables controllability of desired profiles and depth of Cr nano-hemispheres template, further controllability of desired profiles and depth of the GaN truncated nanocones. The optical and photoelectrochemical characterizations show the substantial improvements in ultraviolet light absorption and photoelectrochemical efficiency with photocurrent density by 300% times with respect to planar counterpart. The presented synthetic strategy will pave the way towards low-cost and mass production of GaN truncated nanocone photoelectrode for efficient photocatalysis.

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs. With the carrier concentrations estimated by Mott-Schottky measurements, a PC1D simulation further confirmed the band structures of the three heterojunctions. The u-InGaN/p-GaN and p-InGaN/p-GaN NWs exhibited optimized stability in pH 0 electrolytes for over 10 h with a photocurrent density of about -4.0 and -9.4 mA/cm², respectively. However, the hydrogen and oxygen evolution rates of the Pt-treated u-InGaN/p-GaN NWs exhibited a less favorable stoichiometric ratio. On the other hand, the Pt-decorated p-InGaN/p-GaN NWs showed the best PEC performance, generating approximately 1000 µmol/cm² hydrogen and 550 µmol/cm² oxygen in 10 h. The band-engineered p-InGaN/p-GaN axial NWs-heterojunction demonstrated a great potential for highly efficient and durable photocathodes.

Nanostructured p-TiO2/n-GaN heterostructure as a potential photoelectrode for efficient charge separation

This work proposes p-TiO₂/n-GaN as a new semiconductor heterostructure, which holds great promise as a photoelectrode material. To fabricate p-TiO₂/n-GaN heterostructures, wurtzite GaN is grown in two different morphologies by molecular beam epitaxy, and a TiO₂ overlayer is formed by atomic layer deposition. The XRD and Raman experiments confirm the anatase crystal structure of TiO₂ and SEM shows the conformal coating of TiO₂ on GaN. The system with GaN nanowall network morphology (TiO₂/GaN NWN, calls as TGN) showed better photoelectrochemical response with a photocurrent density of ∼0.65 mA cm^-2 and an IPCE of 17% compared to 0.24 mA cm^-2 and 6% of the planar heterostructure (TiO₂/GaN epilayer, called TGE), at an applied bias of 1.24 V and at an incident power of only 13 mW cm^-2. Chronoamperometric analysis show that electrodes are highly stable. The p-n diagram derived by using the data from cathodoluminescence (CL) and valence band (VB) spectra showed higher barrier height for the TGN structure due to interfacial band bending, and thus, favoring photogenerated charge separation. The evolution of hydrogen in the form of bubbles is visually evident at an applied bias of -0.56V for TGN. The enhanced photocurrent density, cathodic shift in the onset potential and the stability show the superiority of TGN to TGE in charge separation as well as in the photoelectrochemical performance.

High Efficiency Si Photocathode Protected by Multifunctional GaN Nanostructures

Photoelectrochemical water splitting is a clean and environmentally friendly method for solar hydrogen generation. Its practical application, however, has been limited by the poor stability of semiconductor photoelectrodes. In this work, we demonstrate the use of GaN nanostructures as a multifunctional protection layer for an otherwise unstable, low-performance photocathode. The direct integration of GaN nanostructures on n⁺-p Si wafer not only protects Si surface from corrosion but also significantly reduces the charge carrier transfer resistance at the semiconductor/liquid junction, leading to long-term stability (>100 h) at a large current density (>35 mA/cm²) under 1 sun illumination. The measured applied bias photon-to-current efficiency of 10.5% is among the highest values ever reported for a Si photocathode. Given that both Si and GaN are already widely produced in industry, our studies offer a viable path for achieving high-efficiency and highly stable semiconductor photoelectrodes for solar water splitting with proven manufacturability and scalability.

Plasma-Assisted Synthesis and Surface Modification of Electrode Materials for Renewable Energy

Renewable energy technology has been considered as a "MUST" option to lower the use of fossil fuels for industry and daily life. Designing critical and sophisticated materials is of great importance in order to realize high-performance energy technology. Typically, efficient synthesis and soft surface modification of nanomaterials are important for energy technology. Therefore, there are increasing demands on the rational design of efficient electrocatalysts or electrode materials, which are the key for scalable and practical electrochemical energy devices. Nevertheless, the development of versatile and cheap strategies is one of the main challenges to achieve the aforementioned goals. Accordingly, plasma technology has recently appeared as an extremely promising alternative for the synthesis and surface modification of nanomaterials for electrochemical devices. Here, the recent progress on the development of nonthermal plasma technology is highlighted for the synthesis and surface modification of advanced electrode materials for renewable energy technology including electrocatalysts for fuel cells, water splitting, metal-air batteries, and electrode materials for batteries and supercapacitors, etc.

Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure

On the basis of the laterally porous GaN, we designed and fabricated a composite porous GaN structure with both well-ordered lateral and vertical holes. Compared to the plane GaN, the composite porous GaN structure with the combination of the vertical holes can help to reduce UV reflectance and increase the saturation photocurrent during water splitting by a factor of ∼4.5. Furthermore, we investigated the underlying mechanism for the enhancement of the water splitting performance using a finite-difference time-domain method. The results show that the well-ordered vertical holes can not only help to open the embedded pore channels to the electrolyte at both sides and reduce the migration distance of the gas bubbles during the water splitting reactions but also help to modulate the light field. Using this composite porous GaN structure, most of the incident light can be modulated and trapped into the nanoholes, and thus the electric fields localized in the lateral pores can increase dramatically as a result of the strong optical coupling. Our findings pave a new way to develop GaN photoelectrodes for highly efficient solar water splitting.

Photoelectrochemical studies of InGaN/GaN MQW photoanodes

The research interest in photoelectrochemical (PEC) water splitting is ever growing due to its potential to contribute towards clean and portable energy. However, the lack of low energy band gap materials with high photocorrosion resistance is the primary setback inhibiting this technology from commercialisation. The ternary alloy InGaN shows promise to meet the photoelectrode material requirements due to its high chemical stability and band gap tunability. The band gap of InGaN can be modulated from the UV to IR regions by adjusting the In concentration so as to absorb the maximum portion of the solar spectrum. This paper reports on the influence of In concentration on the PEC properties of planar and nanopillar (NP) InGaN/GaN multi-quantum well (MQW) photoanodes, where NPs were fabricated using a top-down approach. Results show that changing the In concentration, while having a minor effect on the PEC performance of planar MQWs, has an enormous impact on the PEC performance of NP MQWs, with large variations in the photocurrent density observed. Planar photoanodes containing MQWs generate marginally lower photocurrents compared to photoanodes without MQWs when illuminated with sunlight. NP MQWs with 30% In generated the highest photocurrent density of 1.6 mA cm^-2, 4 times greater than that of its planar counterpart and 1.8 times greater than that of the NP photoanode with no MQWs. The InGaN/GaN MQWs also slightly influenced the onset potential of both the planar and NP photoanodes. Micro-photoluminescence, diffuse reflectance spectroscopy and IPCE measurements are used to explain these results.

Improved photoelectrochemical performance of GaN nanopillar photoanodes

In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated. Photocurrent density is almost doubled for doped NP photoanodes whereas no improvement is noticed for undoped NP photoanodes. While the diameter of GaN NP is found to influence the onset potential, carrier concentration is found to affect both the onset and overpotential of the electrodes. Optical and electrochemical impedance spectroscopy characterisations are utilised to further explain the PEC results of NP photoanodes. Finally, improvement in the photostability of NP photoanodes with the addition of NiO as a co-catalyst is investigated.

Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting

Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm² at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.

InN/InGaN quantum dot electrochemical devices: new solutions for energy and health

A review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by water splitting, as biosensor transducers and as anion-selective electrodes, and they are also evaluated as supercapacitor electrodes. The performance is benchmarked against the best performances of other reported materials and nanostructures. A model based on the unique interplay of surface and quantum properties is put forward to understand the boost of catalytic activity and anion selectivity interlinking quantum nanostructure physics with electrochemistry and catalysis. Of equal impact is the direct growth on cheap Si substrates without any buffer layers, allowing novel device designs and integration with Si technology. This makes the InN/InGaN QDs viable, opening up new application fields for III-nitride semiconductors.

GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting

A prototype photoelectrode has been fabricated using a GaN nano-pyramid array structure grown on a cost-effective Si (111) substrate, demonstrating a significant improvement in performance of solar-powered water splitting compared with any planar GaN photoelectrode. Such a nano-pyramid structure leads to enhanced optical absorption as a result of a multi-scattering process which can effectively produce a reduction in reflectance. A simulation based on a finite-difference time-domain approach indicates that the nano-pyramid architecture enables incident light to be concentrated within the nano-pyramids as a result of micro-cavity effects, further enhancing optical absorption. Furthermore, the shape of the nano-pyramid further facilitates the photo-generated carrier transportation by enhancing a hole-transfer efficiency. All these features as a result of the nano-pyramid configuration lead to a large photocurrent of 1 mA cm^-2 under an illumination density of 200 mW cm^-2, with a peak incident photon-to-current conversion efficiency of 46.5% at ∼365 nm, around the band edge emission wavelength of GaN. The results presented are expected to pave the way for the fabrication of GaN based photoelectrodes with a high energy conversion efficiency of solar powered water splitting.

Atomic-Scale Origin of Long-Term Stability and High Performance of p-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.

Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3 . 4 e V . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization

The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable for hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a soft UV-curing nano-imprint lithography and a top-down etching technique, which improve the incident photon conversion efficiency (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, the turn-on voltage is reduced low to −0.6 V, which indicates the possibility of achieving self-driven. Furthermore, SiO₂/Si₃N₄ dielectric distributed Bragg reflectors are employed to further improve the IPCE up to 60%. And the photocurrent (@ 1.1 V) is enhanced from 0.37 mA/cm² (original planar structure) to 1.5 mA/cm². These improvements may accelerate the possible applications for hydrogen generation with high energy-efficiency.

A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination

A dual-photoelectrode device, consisting of a photoanode and photocathode with complementary energy bandgaps, has long been perceived as an ideal scheme for achieving high efficiency, unassisted solar-driven water splitting. Previously reported 2-photon tandem devices, however, generally exhibit an extremely low efficiency (<0.1%), which has been largely limited by the incompatibility between the two photoelectrode materials. Here we show that the use of metal-nitride nanowire photoelectrodes, together with the scheme of parallel illumination by splitting the solar spectrum spatially and spectrally, can break the efficiency bottleneck of conventional 2-photon tandem devices. We have first investigated a dual-photoelectrode device consisting of a GaN nanowire photoanode and an InGaN nanowire photocathode, which exhibited an open circuit potential of 1.3 V and nearly 20-fold enhancement in the power conversion efficiency under visible light illumination (400-600 nm), compared to the individual photoelectrodes in 1 mol/L HBr. We have further demonstrated a dual-photoelectrode device consisting of parallel-connected metal-nitride nanowire photoanodes and a Si/InGaN nanowire photocathode, which can perform unassisted, direct solar-to-hydrogen conversion. A power conversion efficiency of 2% was measured under AM1.5G 1 sun illumination.

Efficient water reduction with gallium phosphide nanowires

Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

Photoelectrochemical hydrogen production from solar energy and water is one possible sustainable fuel option. Here, the authors fabricate wurtzite gallium phosphide nanowires, with a direct bandgap, allowing for enhanced optical absorption; demonstrating an enhancement in the water reduction efficiency.

Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation

Indium nitride thin films were grown at different RF powers using a plasma-assisted reactive evaporation method and their electrochemical properties were investigated.

Nanowires for Photovoltaics and Artificial Photosynthesis

As the world's population grows and modernizes, developing inexpensive and efficient technologies for solar energy conversion is becoming increasingly important. Photovoltaics and artificial photosynthesis are two approaches for transforming solar energy into a usable form, either electricity or chemical fuels. While both technologies have been actively researched for decades, semiconductor nanowires possess unique properties that make them promising candidates for efficient photovoltaics and artificial photosynthesis. Because many optical and electronic processes occur over nanometer length scales, nanowires can offer improved capabilities to absorb light, collect photogenerated charges, and perform chemical reactions, functions that are all essential for solar energy conversion. Additionally, the increasing dexterity with which scientists synthesize, fabricate, and integrate nanoscale structures suggests that efficient devices that can take full advantage of these unique properties are not too far in the future.

25th anniversary article: semiconductor nanowires--synthesis, characterization, and applications

Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies.

Band engineered epitaxial 3D GaN-InGaN core-shell rod arrays as an advanced photoanode for visible-light-driven water splitting

3D single-crystalline, well-aligned GaN-InGaN rod arrays are fabricated by selective area growth (SAG) metal-organic vapor phase epitaxy (MOVPE) for visible-light water splitting. Epitaxial InGaN layer grows successfully on 3D GaN rods to minimize defects within the GaN-InGaN heterojunctions. The indium concentration (In ∼ 0.30 ± 0.04) is rather homogeneous in InGaN shells along the radial and longitudinal directions. The growing strategy allows us to tune the band gap of the InGaN layer in order to match the visible absorption with the solar spectrum as well as to align the semiconductor bands close to the water redox potentials to achieve high efficiency. The relation between structure, surface, and photoelectrochemical property of GaN-InGaN is explored by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS), Auger electron spectroscopy (AES), current-voltage, and open circuit potential (OCP) measurements. The epitaxial GaN-InGaN interface, pseudomorphic InGaN thin films, homogeneous and suitable indium concentration and defined surface orientation are properties demanded for systematic study and efficient photoanodes based on III-nitride heterojunctions.

Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode

We report on the first demonstration of stable photoelectrochemical water splitting and hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide), which is achieved by InGaN/GaN core/shell nanowire arrays grown on Si substrate using catalyst-free molecular beam epitaxy. The nanowires are doped n-type using Si to reduce the surface depletion region and increase current conduction. Relatively high incident-photon-to-current-conversion efficiency (up to ~27%) is measured under ultraviolet and visible light irradiation. Under simulated sunlight illumination, steady evolution of molecular hydrogen is further demonstrated.