1
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Mediavilla I, Anaya J, Galiana B, Hrachowina L, Borgström MT, Jimenez J. A cathodoluminescence study of InP/InGaP axially heterostructured NWs for tandem solar cells. NANOTECHNOLOGY 2024; 35:195703. [PMID: 38316051 DOI: 10.1088/1361-6528/ad263d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Accepted: 02/05/2024] [Indexed: 02/07/2024]
Abstract
Axially heterostructured nanowires (NWs) constitute a promising platform for advanced electronic and optoelectronic nanodevices. The presence of different materials in these NWs introduces a mismatch resulting in complex strain distributions susceptible of changing the band gap and carrier mobility. The growth of these NWs presents challenges related to the reservoir effect in the catalysts droplet that affect to the junction abruptness, and the occurrence of undesired lateral growth creating core-shell heterostructures that introduce additional strain. We present herein a cathodoluminescence (CL) analysis on axially heterostructured InP/InGaP NWs with tandem solar cell structure. The CL is complemented with micro Raman, micro photoluminescence (PL), and high resolution transmission electron microscopy measurements. The results reveal the zinc blende structure of the NWs, the presence of a thin InGaP shell around the InP bottom cell, along with its associated strain, and the doping distribution.
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Affiliation(s)
- I Mediavilla
- GdS Optronlab, Ed. LUCIA, Paseo de Belen 19, Universidad de Valladolid, E-47011, Valladolid, Spain
| | - J Anaya
- GdS Optronlab, Ed. LUCIA, Paseo de Belen 19, Universidad de Valladolid, E-47011, Valladolid, Spain
| | - B Galiana
- Universidad Carlos III de Madrid, Physics Department, Av. Universidad 40, Leganes, E-28911, Spain
| | - L Hrachowina
- Nano Lund and Division of Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden
| | - M T Borgström
- Nano Lund and Division of Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden
| | - J Jimenez
- GdS Optronlab, Ed. LUCIA, Paseo de Belen 19, Universidad de Valladolid, E-47011, Valladolid, Spain
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2
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Himwas C, Yordsri V, Thanachayanont C, Chomdech S, Pumee W, Panyakeow S, Kanjanachuchai S. High verticality vapor-liquid-solid growth of GaAs 0.99Bi 0.01 nanowires using Ga-Bi assisted catalytic droplets. NANOSCALE ADVANCES 2024; 6:846-854. [PMID: 38298583 PMCID: PMC10825910 DOI: 10.1039/d3na00428g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 10/24/2023] [Indexed: 02/02/2024]
Abstract
GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near- and mid-infrared wavelengths due to the optical properties of the Bi-containing compound and the nanowire structure benefits. In general, synthesizing the GaAsBi NWs results in uncontrollable metamorphic structures and spontaneous Bi-containing droplets. Here, we explore the potential of using the droplets as catalysts to form GaAsBi nanowires (hence, the vapor-liquid-solid growth mechanism) on GaAs (111) substrates by molecular beam epitaxy. The GaAsBi NWs experience a two-step growth: Bi droplet deposition and GaAsBi nanowire growth. The optimal droplet deposition temperature (250 °C) is defined based on the droplet morphologies. The gradation of growth temperatures of GaAsBi NWs to 250 °C, 300 °C, and 350 °C results in high-aspect-ratio NWs, tilted NWs, and low-aspect-ratio NWs, respectively. Structural investigation shows that the optimal (low-aspect-ratio) NW has the composition of GaAs0.99Bi0.01 with the catalytic droplet of Ga0.99Bi0.01 decorated on its tip. Detailed structural analyses show that the Bi content progressively increases from the NW stem to the wire-substrate interface. The satisfying GaAsBi NW morphology does not warrant the expected superior optical results. Photoluminescence study suggests that the NW has a strong carrier thermalization from the NW stem to the wire-substrate interface influenced by the graded NW growth temperature profile.
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Affiliation(s)
- Chalermchai Himwas
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Visittapong Yordsri
- National Metal and Materials Technology Center, Thailand Science Park 114 Paholyothin Rd, Klong 1 Klong Luang Pathumthani 12120 Thailand
| | - Chanchana Thanachayanont
- National Metal and Materials Technology Center, Thailand Science Park 114 Paholyothin Rd, Klong 1 Klong Luang Pathumthani 12120 Thailand
| | - Saharat Chomdech
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Wenich Pumee
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Somsak Panyakeow
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
| | - Songphol Kanjanachuchai
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University 254 Phayathai Road Bangkok 10330 Thailand
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3
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Peng K, Morgan NP, Wagner FM, Siday T, Xia CQ, Dede D, Boureau V, Piazza V, Fontcuberta I Morral A, Johnston MB. Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires. Nat Commun 2024; 15:103. [PMID: 38167839 PMCID: PMC10761983 DOI: 10.1038/s41467-023-44345-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 12/09/2023] [Indexed: 01/05/2024] Open
Abstract
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2-1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.
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Affiliation(s)
- Kun Peng
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Nicholas Paul Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Ford M Wagner
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Thomas Siday
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Chelsea Qiushi Xia
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Victor Boureau
- Interdisciplinary Centre for Electron Microscopy, EPFL, 1015, Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland.
- Laboratory of Semiconductor Materials, Institute of Physics, EPFL, 1015, Lausanne, Switzerland.
| | - Michael B Johnston
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK.
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4
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Al-Abri R, Al Amairi N, Church S, Byrne C, Sivakumar S, Walton A, Magnusson MH, Parkinson P. Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300053. [PMID: 37093214 DOI: 10.1002/smll.202300053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2023] [Revised: 03/27/2023] [Indexed: 05/03/2023]
Abstract
Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry, or doping. Using photoluminescence spectroscopy of a population of more than 11 000 individual zinc-doped gallium arsenide nanowires, inhomogeneity is revealed in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot-carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across the population, hot-carrier dynamics is revealed at the sub-picosecond timescale showing interband electronic dynamics. High-throughput spectroscopy together with a Bayesian approach are shown to provide unique insight in an inhomogeneous nanomaterial population, and can reveal electronic dynamics otherwise requiring complex pump-probe experiments in highly non-equilibrium conditions.
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Affiliation(s)
- Ruqaiya Al-Abri
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Nawal Al Amairi
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Stephen Church
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Conor Byrne
- Department of Chemistry and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Sudhakar Sivakumar
- Department of Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, Sweden
| | - Alex Walton
- Department of Chemistry and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Martin H Magnusson
- Department of Physics and NanoLund, Lund University, Box 118, Lund, SE-221 00, Sweden
| | - Patrick Parkinson
- Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
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5
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Mithun KP, Tripathi S, Roy A, Ravishankar N, Sood AK. Ultrafast time-resolved carrier dynamics in tellurium nanowires using optical pump terahertz probe spectroscopy. NANOSCALE 2023. [PMID: 37465858 DOI: 10.1039/d3nr01588b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
We report carrier relaxation dynamics in semiconducting tellurium nanowires (average diameter ∼ 10 nm) using ultrafast time-resolved terahertz spectroscopy. After photoexcitation using an 800 nm pump pulse, we observed an initial increase in the THz conductivity due to the absorption of THz radiation by photoexcited carriers. The time evolution of the differential conductivity (Δσ(τpp) = σpump on(τpp) - σpump off) shows a bi-exponential relaxation with the initial fast decay time scale of τ1 ∼ 25 ps followed by a longer relaxation time constant of τ2 ∼ 100 ps. Interestingly, the two time scales depend on the amount of the capping agent present on the surface of TeNWs, showing a faster relaxation of the photoexcited carriers as the percentage of capping decreases. This is physically interpreted as the surface state mediated relaxation mechanism of the photo-pumped carriers depending on the density of available surface states. A quantitative understanding is obtained using a coupled rate equation model taking into account the decay mechanisms determined from the surface mediated relaxation rate (DS) and direct recombination rate (DR) of the electron-hole pairs. Furthermore, the measured lattice temperature (TL) dependent dynamics, showing a faster relaxation at lower temperature, is understood using the same rate equation model, giving a power law dependence of the electron-hole recombination rate (DR) on TL as DR ∝ TL-1/2. This is explained by estimating DR using the van Roosbroeck-Shockley theory taking into account the density of states () of one-dimensional nanowires. Furthermore, to understand the measured frequency-dependent THz photoconductivity, we model Δσ(ω) using the Boltzmann transport equation taking into account the energy-dependent scattering rates showing the dominant role of short range (Γsr) and Coulomb scattering (ΓC) rates in the relaxation process, which further provides a measure of the charged and neutral impurity concentrations.
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Affiliation(s)
- K P Mithun
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shalini Tripathi
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
| | - Ahin Roy
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
- Materials Science Center, Indian Institute of Technology, Kharagpur, 721302, India
| | - N Ravishankar
- Materials Research Center, Indian Institute of Science, Bangalore 560012, India
| | - A K Sood
- Center for Ultrafast Laser Applications, Indian Institute of Science, Bangalore 560012, India.
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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6
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Yuan L, Pokharel R, Devkota S, Kuchoor H, Dawkins K, Lee MC, Huang Y, Yarotski D, Iyer S, Prasankumar RP. Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization. NANOTECHNOLOGY 2022; 33:425702. [PMID: 35772308 DOI: 10.1088/1361-6528/ac7d61] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2022] [Accepted: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. It is established that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz probe spectroscopy has been used to study non-equilibrium carrier dynamics and transport in Te-doped GaAsSb and dilute nitride GaAsSbN NWs, with the goal of correlating these results with electrical characterization of their equilibrium photo-response under bias and low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ± 1 picoseconds (ps) and 147 ± 3 ps in GaAsSbN and GaAsSb NWs, respectively, were measured. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ∼2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.
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Affiliation(s)
- Long Yuan
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America
| | - Rabin Pokharel
- Nanoengineering Department, Joint School of Nanoscience and Nanoengineering, North Carolina A&T University, Greensboro, NC 27401, United States of America
| | - Shisir Devkota
- Nanoengineering Department, Joint School of Nanoscience and Nanoengineering, North Carolina A&T University, Greensboro, NC 27401, United States of America
| | - Hirandeep Kuchoor
- Nanoengineering Department, Joint School of Nanoscience and Nanoengineering, North Carolina A&T University, Greensboro, NC 27401, United States of America
| | - Kendall Dawkins
- Nanoengineering Department, Joint School of Nanoscience and Nanoengineering, North Carolina A&T University, Greensboro, NC 27401, United States of America
| | - Min-Cheol Lee
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America
| | - Yue Huang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America
| | - Dzmitry Yarotski
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America
| | - Shanthi Iyer
- Nanoengineering Department, Joint School of Nanoscience and Nanoengineering, North Carolina A&T University, Greensboro, NC 27401, United States of America
| | - Rohit P Prasankumar
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, United States of America
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7
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Chen L, Adeyemo SO, Fonseka HA, Liu H, Kar S, Yang H, Velichko A, Mowbray DJ, Cheng Z, Sanchez AM, Joyce HJ, Zhang Y. Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer. NANO LETTERS 2022; 22:3433-3439. [PMID: 35420433 PMCID: PMC9097579 DOI: 10.1021/acs.nanolett.2c00805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 03/25/2022] [Indexed: 06/14/2023]
Abstract
The influence of nanowire (NW) surface states increases rapidly with the reduction of diameter and hence severely degrades the optoelectronic performance of narrow-diameter NWs. Surface passivation is therefore critical, but it is challenging to achieve long-term effective passivation without significantly affecting other qualities. Here, we demonstrate that an ultrathin InP passivation layer of 2-3 nm can effectively solve these challenges. For InAsP nanowires with small diameters of 30-40 nm, the ultrathin passivation layer reduces the surface recombination velocity by at least 70% and increases the charge carrier lifetime by a factor of 3. These improvements are maintained even after storing the samples in ambient atmosphere for over 3 years. This passivation also greatly improves the performance thermal tolerance of these thin NWs and extends their operating temperature from <150 K to room temperature. This study provides a new route toward high-performance room-temperature narrow-diameter NW devices with long-term stability.
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Affiliation(s)
- LuLu Chen
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Stephanie O. Adeyemo
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - Srabani Kar
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Hui Yang
- Institute
for Materials Discovery, University College
London, Roberts Building, Malet Place, London, WC1E 7JE, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Zhiyuan Cheng
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Hannah J Joyce
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Yunyan Zhang
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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8
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Chang TY, Kim H, Hubbard WA, Azizur-Rahman KM, Ju JJ, Kim JH, Lee WJ, Huffaker D. InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12488-12494. [PMID: 35175722 DOI: 10.1021/acsami.1c21013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building next-generation quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their power-dependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.
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Affiliation(s)
- Ting-Yuan Chang
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - William A Hubbard
- NanoElectronic Imaging Inc., Los Angeles, California 90095, United States
| | | | - Jung Jin Ju
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
| | - Je-Hyung Kim
- Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Wook-Jae Lee
- Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea
- Department of Data Information and Physics, Kongju National University, Gongju 32588, South Korea
| | - Diana Huffaker
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, United States
- School of Physics and Astronomy, Cardiff University, Cardiff, Wales CF24 3AA, U.K
- Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
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9
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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10
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Himwas C, Yordsri V, Thanachayanont C, Tchernycheva M, Panyakeow S, Kanjanachuchai S. GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy. NANOTECHNOLOGY 2021; 33:095602. [PMID: 34781278 DOI: 10.1088/1361-6528/ac39ca] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 11/15/2021] [Indexed: 06/13/2023]
Abstract
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core-shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared optical applications. Scanning electron microscopy shows that although the stems of GaAs/GaAsP and GaAs/GaAsBi core-shell NWs preserve the hexagonal prism shape, the GaAs/GaAsPBi core-shell NWs develop a quasi-three-fold orientational symmetry affected by the hexagonal prismatic core. Detailed structural analyses of a GaAs/GaAsPBi core-shell stem show that it crystallized with zincblende structure with a nominal shell composition of GaAs0.617P0.362Bi0.021. Photoluminescence of GaAs/GaAsPBi core-shell NWs shows the luminescent peak at 1.02 eV with high internal quantum efficiency at room temperature (IQERT∼ 6%) superior to those of MBE-grown GaAs core NWs and GaAsPBi multiple quantum wells earlier reported. Energy-dispersive x-ray spectroscopy performed on the GaAs/GaAsPBi core-shell NWs yields an estimated bandgap different from the optically measured value. We attribute this discrepancy to the NW compositional fluctuations that also may explain the high IQERT.
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Affiliation(s)
- C Himwas
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
| | - V Yordsri
- National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand
| | - C Thanachayanont
- National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand
| | - M Tchernycheva
- Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, F-91120 Palaiseau Cedex, France
| | - S Panyakeow
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
| | - S Kanjanachuchai
- Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
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11
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Abstract
Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology. Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.
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12
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Hrachowina L, Anttu N, Borgström MT. Wafer-Scale Synthesis and Optical Characterization of InP Nanowire Arrays for Solar Cells. NANO LETTERS 2021; 21:7347-7353. [PMID: 34449221 PMCID: PMC8431724 DOI: 10.1021/acs.nanolett.1c02542] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 08/19/2021] [Indexed: 06/13/2023]
Abstract
Nanowire solar cells have the potential to reach the same efficiencies as the world-record III-V solar cells while using a fraction of the material. For solar energy harvesting, large-area nanowire solar cells have to be processed. In this work, we demonstrate the synthesis of epitaxial InP nanowire arrays on a 2 inch wafer. We define five array areas with different nanowire diameters on the same wafer. We use a photoluminescence mapper to characterize the sample optically and compare it to a homogeneously exposed reference wafer. Both steady-state and time-resolved photoluminescence maps are used to study the material's quality. From a mapping of reflectance spectra, we simultaneously extract the diameter and length of the nanowires over the full wafer. The extracted knowledge of large-scale nanowire synthesis will be crucial for the upscaling of nanowire-based solar cells, and the demonstrated wafer-scale characterization methods will be central for quality control during manufacturing.
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Affiliation(s)
- Lukas Hrachowina
- NanoLund
and Division of Solid State Physics, Lund
University, Box 118, 221 00 Lund, Sweden
| | - Nicklas Anttu
- Physics,
Faculty of Science and Engineering, Åbo
Akademi University, FI-20500 Turku, Finland
- Department
of Electronics and Nanoengineering, Aalto
University, P.O. Box 13500, FI-00076 Aalto, Finland
| | - Magnus T. Borgström
- NanoLund
and Division of Solid State Physics, Lund
University, Box 118, 221 00 Lund, Sweden
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13
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Purschke DN, Pielmeier MRP, Üzer E, Ott C, Jensen C, Degg A, Vogel A, Amer N, Nilges T, Hegmann FA. Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100978. [PMID: 34278600 DOI: 10.1002/adma.202100978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 04/30/2021] [Indexed: 06/13/2023]
Abstract
Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm2 V-1 s-1 along the double-helix axis and a hole mobility of 238 cm2 V-1 s-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 1018 cm-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications.
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Affiliation(s)
- David N Purschke
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Markus R P Pielmeier
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Ebru Üzer
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Claudia Ott
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Charles Jensen
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Annabelle Degg
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Anna Vogel
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Naaman Amer
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
| | - Tom Nilges
- Department of Chemistry, Technical University of Munich, 85748, Garching bei München, Germany
| | - Frank A Hegmann
- Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2E1, Canada
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14
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Azimi Z, Gagrani N, Qu J, Lem OLC, Mokkapati S, Cairney JM, Zheng R, Tan HH, Jagadish C, Wong-Leung J. Understanding the role of facets and twin defects in the optical performance of GaAs nanowires for laser applications. NANOSCALE HORIZONS 2021; 6:559-567. [PMID: 33999985 DOI: 10.1039/d1nh00079a] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs nanowires are regarded as promising building blocks of future optoelectronic devices. Despite progress, the growth of high optical quality GaAs nanowires is a standing challenge. Understanding the role of twin defects and nanowire facets on the optical emission and minority carrier lifetime of GaAs nanowires is key for the engineering of their optoelectronic properties. Here, we present new insights into the microstructural parameters controlling the optical properties of GaAs nanowires, grown via selective-area metal-organic vapor-phase epitaxy. We observe that these GaAs nanowires have a twinned zinc blende crystal structure with taper-free {110} side facets that result in an ultra-low surface recombination velocity of 3.5 × 104 cm s-1. This is an order of magnitude lower than that reported for defect-free GaAs nanowires grown by the vapor-liquid-solid technique. Using time-resolved photoluminescence and cathodoluminescence measurements, we untangle the local correlation between structural and optical properties demonstrating the superior role of the side facets in determining recombination rates over that played by twin defects. The low surface recombination velocity of these taper-free {110} side facets enable us to demonstrate, for the first time, low-temperature lasing from bare (unpassivated) GaAs nanowires, and also efficient room-temperature lasing after passivation with an AlGaAs shell.
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Affiliation(s)
- Zahra Azimi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australia.
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15
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Addressing the Theoretical and Experimental Aspects of Low-Dimensional-Materials-Based FET Immunosensors: A Review. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9070162] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Electrochemical immunosensors (EI) have been widely investigated in the last several years. Among them, immunosensors based on low-dimensional materials (LDM) stand out, as they could provide a substantial gain in fabricating point-of-care devices, paving the way for fast, precise, and sensitive diagnosis of numerous severe illnesses. The high surface area available in LDMs makes it possible to immobilize a high density of bioreceptors, improving the sensitivity in biorecognition events between antibodies and antigens. If on the one hand, many works present promising results in using LDMs as a sensing material in EIs, on the other hand, very few of them discuss the fundamental interactions involved at the interfaces. Understanding the fundamental Chemistry and Physics of the interactions between the surface of LDMs and the bioreceptors, and how the operating conditions and biorecognition events affect those interactions, is vital when proposing new devices. Here, we present a review of recent works on EIs, focusing on devices that use LDMs (1D and 2D) as the sensing substrate. To do so, we highlight both experimental and theoretical aspects, bringing to light the fundamental aspects of the main interactions occurring at the interfaces and the operating mechanisms in which the detections are based.
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16
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Rashidi M, Haggren T, Su Z, Jagadish C, Mokkapati S, Tan HH. Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers. NANO LETTERS 2021; 21:3901-3907. [PMID: 33900783 DOI: 10.1021/acs.nanolett.1c00455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Random lasers are promising, easy-to-fabricate light sources that rely on scattering instead of well-defined optical cavities. We demonstrate random lasing in GaAs nanowires using both randomly oriented and vertically aligned arrays. These configurations are shown to lase in both resonant and nonresonant modes, where aligned nanowires support predominantly resonant lasing and randomly oriented favors nonresonant lasing. On the basis of numerical simulations, aligning the nanowires increases the system's scattering efficiency leading to higher quality factor modes and thus favoring the resonant modes. We further demonstrate two methods to optically suppress resonant mode lasing by increasing the number of excited modes. The light output-light input curves show a pronounced kink for the resonant lasing mode while the nonresonant mode is kink-free. The resonant lasing modes may be used as tunable lasers, and the nonresonant modes exhibit near-thresholdless amplification. Switching between lasing modes opens up new opportunities to use lasers in broader applications.
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Affiliation(s)
- Mohammad Rashidi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Tuomas Haggren
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sudha Mokkapati
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Hark H Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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17
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Al-Abri R, Choi H, Parkinson P. Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires. JPHYS PHOTONICS 2021. [DOI: 10.1088/2515-7647/abe282] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Abstract
Abstract
Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.
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18
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Park TE, Min BC, Lee J, Jeon J, Lee KY, Choi HJ, Chang J. Phase-coherent transport in trigonal gallium nitride nanowires. NANOTECHNOLOGY 2021; 32:125702. [PMID: 33264761 DOI: 10.1088/1361-6528/abcfeb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Gallium nitride nanowires (GaN NWs) with triangular cross-section exhibit universal conductance fluctuations (UCF) originating from the quantum interference of electron wave functions in the NWs. The amplitude of UCF is inversely proportional to the applied bias current. The bias dependence of UCF, combined with temperature dependence of the resistance suggests that phase coherent transport dominates over normal transport in GaN NWs. A unique temperature dependence of phase-coherent length and fluctuation amplitude is associated with inelastic electron-electron scattering in NWs. The phase-coherence length extracted from the UCF is as large as 400 nm at 1.8 K, and gradually decreases as temperature increases up to 60 K.
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Affiliation(s)
- Tae-Eon Park
- Center for Spintronics, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Byoung-Chul Min
- Center for Spintronics, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Nano and Information Technology Division, KIST School, Korea University of Science and Technology, Seoul 02792, Republic of Korea
| | - Jaejun Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jeehoon Jeon
- Center for Spintronics, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Ki-Young Lee
- Center for Spintronics, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Heon-Jin Choi
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Joonyeon Chang
- Center for Spintronics, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
- Yonsei-KIST Convergence Research Institute, Yonsei University, Seoul 03722, Republic of Korea
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19
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Jiang N, Joyce HJ, Parkinson P, Wong-Leung J, Tan HH, Jagadish C. Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires. Front Chem 2020; 8:607481. [PMID: 33365302 PMCID: PMC7750184 DOI: 10.3389/fchem.2020.607481] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2020] [Accepted: 11/05/2020] [Indexed: 11/13/2022] Open
Abstract
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.
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Affiliation(s)
- Nian Jiang
- Electrical Engineering Division, Engineering Department, University of Cambridge, Cambridge, United Kingdom
| | - Hannah J Joyce
- Electrical Engineering Division, Engineering Department, University of Cambridge, Cambridge, United Kingdom
| | - Patrick Parkinson
- Department of Physics and Astronomy, The Photon Science Institute, University of Manchester, Manchester, United Kingdom
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, Australia.,Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, Australia.,Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, Australia
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20
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Shin JH, Rhu H, Ji YB, Oh SJ, Lee W. Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50703-50712. [PMID: 33125230 DOI: 10.1021/acsami.0c13574] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A generic top-down approach for the preparation of extended arrays of high-aspect ratio GaAs nanowires (NWs) with different crystallographic orientations (i.e., [100] or [111]) and morphologies (i.e., porous, nonporous, tapered, or awl-like NWs) is reported. The method is based on the anodically induced chemical etching (AICE) of GaAs wafers in an oxidant-free aqueous HF solution at room temperature by using a patterned metal mesh and allows us to overcome the drawbacks of conventional metal-assisted chemical etching (MACE) processes. Local oxidative dissolution of GaAs in contact with a metal is achieved by externally injecting holes (h+) into the valence band (VB) of GaAs through the metal mesh. It is found that injection of holes (h+) through direct GaAs contact, rather than the metal mesh, does not yield uniform nanowires but porosify GaAs wafers due to the high cell potential. On the basis of experiments and numerical simulation for the spatial distribution of an electric field, a phenomenological model that explains the formation of GaAs NWs and their porosification behaviors is proposed. GaAs NWs exhibit excellent terahertz (THz) wave emission properties, which vary with either the length or the shape of the nanowires. By taking advantage of controlled porosification and easy transfer of GaAs NWs to foreign substrates, a flexible THz wave emitter is realized.
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Affiliation(s)
- Jeong Ho Shin
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
| | - Hyun Rhu
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
| | - Young Bin Ji
- Gimhae Industry promotion & Bio-medical Foundation (GIBF), Gimhae, 50969 Gyeongnam, Republic of Korea
| | - Seung Jae Oh
- YUHS-KRIBB Medical Convergence Research Institute, College of Medicine, Yonsei University, 03722 Seoul, Republic of Korea
| | - Woo Lee
- Korea Research Institute of Standards and Science (KRISS), Yuseong, Daejeon 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology (UST), Yuseong, Daejeon 34113, Republic of Korea
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21
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Zhang W, Wang J, Zhao L, Wang J, Zhao M. Transition-metal monochalcogenide nanowires: highly efficient bi-functional catalysts for the oxygen evolution/reduction reactions. NANOSCALE 2020; 12:12883-12890. [PMID: 32520041 DOI: 10.1039/d0nr01148g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Stable bi-functional electrocatalysts for the oxygen evolution/reduction reactions (OER/ORR) are desirable for rechargeable metal-air batteries and regenerative fuel cell technologies. In this study, the electronic structures and catalytic performance of recently synthesized transition-metal monochalcogenide (MX, M = Cr, Mo, W; X = S, Se, Te) nanowires (NWs) were systemically investigated based on first-principles calculations. The results demonstrate that these MX NWs can be deemed as efficient bi-functional catalysts for the OER/ORR. In particular, the low overpotentials of CrTe NWs are even superior to those of the well-known noble catalysts. To study the origin of excellent electrocatalytic performance, we establish linear relationships between the adsorption strength of intermediates and the overpotentials. A comparison study reveals that the NWs exhibit better catalytic performance than the corresponding two-dimensional materials, indicating the superiority of the unique NW structures for catalysis. These computational results offer not only a new family of bi-functional OER/ORR catalysts, but also a promising perspective for the development of stable, low-cost and highly active non-noble electrocatalysts.
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Affiliation(s)
- Wenqing Zhang
- School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
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22
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Pizzuto A, Mittleman DM, Klarskov P. Laser THz emission nanoscopy and THz nanoscopy. OPTICS EXPRESS 2020; 28:18778-18789. [PMID: 32672171 DOI: 10.1364/oe.382130] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 01/28/2020] [Indexed: 06/11/2023]
Abstract
We present an experimental and theoretical comparison of two different scattering-type scanning near-field optical microscopy (s-SNOM) based techniques in the terahertz regime; nanoscale reflection-type terahertz time-domain spectroscopy (THz nanoscopy) and nanoscale laser terahertz emission microscopy, or laser terahertz emission nanoscopy (LTEN). We show that complementary information regarding a material's charge carriers can be gained from these techniques when employed back-to-back. For the specific case of THz nanoscopy and LTEN imaging performed on a lightly p-doped InAs sample, we were able to record waveforms with detector signal components demodulated up to the 6th and the 10th harmonic of the tip oscillation frequency, and measure a THz near-field confinement down to 11 nm. A computational approach for determining the spatial confinement of the enhanced electric field in the near-field region of the conductive probe is presented, which manifests an effective "tip sharpening" in the case of nanoscale LTEN due to the alternative geometry and optical nonlinearity of the THz generation mechanism. Finally, we demonstrate the utility of the finite dipole model (FDM) in predicting the broadband scattered THz electric field, and present the first use of this model for predicting a near-field response from LTEN.
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23
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Zhang B, Jansson M, Chen PP, Wang XJ, Chen WM, Buyanova IA. Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires. NANOTECHNOLOGY 2020; 31:225706. [PMID: 32066128 DOI: 10.1088/1361-6528/ab76f0] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The effects of Bi incorporation on the recombination process in wurtzite (WZ) GaBiAs nanowires are studied by employing micro-photoluminescence (μ-PL) and time-resolved PL spectroscopies. It is shown that at low temperatures (T < 75 K) Bi-induced localization effects cause trapping of excitons within band-tail states, which prolongs their lifetime and suppresses surface nonradiative recombination (SNR). With increasing temperature, the trapped excitons become delocalized and their lifetime rapidly shortens due to facilitated SNR. Furthermore, Bi incorporation in the GaBiAs NW is found to have a minor influence on the surface states responsible for SNR.
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Affiliation(s)
- B Zhang
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
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24
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Rana R, Balaghi L, Fotev I, Schneider H, Helm M, Dimakis E, Pashkin A. Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies. NANO LETTERS 2020; 20:3225-3231. [PMID: 32227897 DOI: 10.1021/acs.nanolett.9b05328] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump/THz probe spectroscopy with broadband THz pulses and peak electric fields up to 0.6 MV/cm. The plasmon resonance of the photoexcited charge carriers exhibits a systematic redshift and a suppression of its spectral weight for THz driving fields exceeding 0.4 MV/cm. This behavior is attributed to the intervalley electron scattering that results in the doubling of the average electron effective mass. Correspondingly, the electron mobility at the highest fields drops to about half of the original value. We demonstrate that the increase of the effective mass is nonuniform along the nanowires and takes place mainly in their middle part, leading to a spatially inhomogeneous carrier response. Our results quantify the nonlinear transport regime in GaAs-based nanowires and show their high potential for development of nanodevices operating at THz frequencies.
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Affiliation(s)
- Rakesh Rana
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Leila Balaghi
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- cfaed, Technische Universität Dresden, 01062 Dresden, Germany
| | - Ivan Fotev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- cfaed, Technische Universität Dresden, 01062 Dresden, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- cfaed, Technische Universität Dresden, 01062 Dresden, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Alexej Pashkin
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
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25
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Friedl M, Cerveny K, Huang C, Dede D, Samani M, Hill MO, Morgan N, Kim W, Güniat L, Segura-Ruiz J, Lauhon LJ, Zumbühl DM, Fontcuberta I Morral A. Remote Doping of Scalable Nanowire Branches. NANO LETTERS 2020; 20:3577-3584. [PMID: 32315191 DOI: 10.1021/acs.nanolett.0c00517] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.
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Affiliation(s)
- Martin Friedl
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Kris Cerveny
- Department of Physics, University of Basel, Basel, Switzerland
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Didem Dede
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Mohammad Samani
- Department of Physics, University of Basel, Basel, Switzerland
| | - Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Nicholas Morgan
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Wonjong Kim
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Lucas Güniat
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | | | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | | | - Anna Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
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26
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Li Z, Yuan X, Gao Q, Yang I, Li L, Caroff P, Allen M, Allen J, Tan HH, Jagadish C, Fu L. In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse. NANOTECHNOLOGY 2020; 31:244002. [PMID: 32131061 DOI: 10.1088/1361-6528/ab7c74] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs1- x Sb x core-only NWs, the GaAs1- x Sb x /InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAs1- x Sb x /InP core/shell NW photodetector shows a responsivity of 325.1 A W-1 (@ 1.3 μm and 1.5 V) that is significantly enhanced compared to that of single GaAs1- x Sb x core-only NW photodetectors (143.5 A W-1), with a comparable detectivity of 4.7 × 1010 and 5.3 × 1010 cm√Hz/W, respectively. This is ascribed to the enhanced carrier mobility and carrier concentration by the in situ passivation, which lead to both higher photoconductivity and dark-conductivity. Our results show that in situ passivation is an effective approach for performance enhancement of GaAs1-x Sb x NW based optoelectronic devices.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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27
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Song Q, Chai L, Liu W, Ma Q, Li Y, Hu M. THz polarization-sensitive characterization of a large-area multilayer rhenium diselenide nanofilm. NANOTECHNOLOGY 2019; 30:505203. [PMID: 31509805 DOI: 10.1088/1361-6528/ab4377] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, rhenium diselenide (ReSe2) has attracted considerable attention due to its high anisotropy in the layer plane, which makes it a promising candidate for wide applications in electronics and optoelectronics. In this paper, we focus on the polarization-sensitive characteristics of a large-area multilayer ReSe2 nanofilm in the terahertz (THz) region under passive and active conditions by means of THz time-domain spectroscopy. We demonstrate the passive ReSe2 nanofilm with intrinsic THz polarization anisotropy. Maximum transmittance occurs only when the polarization direction of the incident THz wave is along the Re-chains direction. More importantly, THz polarization properties of the active ReSe2 nanofilm by an external electric field applied in a selected directions are also demonstrated. The modulation depth of the THz transmission is up to 16% and the response time is on the order of picoseconds. In addition, a comparative experiment is performed on three kinds of THz polarizers, i.e., ReSe2 nanofilm, carbon nanotubes (CNTs) and wire-gird, respectively. The results prove that the performance of the polarizer based on the active ReSe2 nanofilm is comparable with those of CNTs and the THz wire-gird polarizer. Based on these studies, we believe that the polarization-sensitive ReSe2 nanofilm can find important applications in ultrafast switches, filters and modulation devices in the THz region.
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Affiliation(s)
- Qi Song
- School of Precision Instrument and Opto-electronics engineering, Key Laboratory of Opto-electronic Information Technology (Ministry of Education), Ultrafast Laser Laboratory, Tianjin University, Tianjin, People's Republic of China
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28
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Gao H, Sun Q, Sun W, Tan HH, Jagadish C, Zou J. Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires. NANO LETTERS 2019; 19:8262-8269. [PMID: 31661618 DOI: 10.1021/acs.nanolett.9b03835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Understanding the effect of a catalyst on the growth of nanowires is crucial for their controllable synthesis. In this study, we report the growth of InGaP nanowires induced by different-sized Au catalysts by metal-organic chemical vapor deposition. Through electron microscopy characterization, two types of InGaP nanowires are identified, and the difference in catalyst size is shown to cause their different morphological, structural, and compositional characteristics. Furthermore, the influencing mechanism of catalyst size on the formation of hierarchical structures in nanowires is discussed. This study provides an insight for a better understanding of the growth of ternary nanowires, especially the effect of catalyst size, which can be a promising approach to control the ternary nanowire growth, and is therefore beneficial for the design of the corresponding nanowire-based device.
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Affiliation(s)
| | | | | | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
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29
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Su X, Zeng X, Němec H, Zou X, Zhang W, Borgström MT, Yartsev A. Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires. NANOSCALE 2019; 11:18550-18558. [PMID: 31363719 DOI: 10.1039/c9nr03187a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Introduction of in situ HCl etching to an epitaxial growth process has been shown to suppress radial growth and improve the morphology and optical properties of nanowires. In this paper, we investigate the dynamics of photo-generated charge carriers in a series of indium phosphide nanowires grown with varied HCl fluxes. Time resolved photo-induced luminescence, transient absorption and time resolved terahertz spectroscopy were employed to investigate charge trapping and recombination processes in the nanowires. Since the excitation photons generate charges predominantly in less than a half length of the nanowires, we can selectively assess the charge carrier dynamics at their top and bottom. We found that the photoluminescence decay is dominated by the decay of the mobile hole population due to trapping, which is affected by the HCl etching. The hole trapping rate is in general faster at the top of the nanowires than at the bottom. In contrast, electrons remain highly mobile until they recombine non-radiatively with the trapped holes. The slowest hole trapping as well as the least efficient non-radiative recombination was recorded for etching using the HCl molar fraction of χHCl = 5.4 × 10-5.
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Affiliation(s)
- Xiaojun Su
- School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China. and Chemical Physics and NanoLund, Lund University, Lund 22100, Sweden.
| | - Xulu Zeng
- Solid State Physics and NanoLund, Lund University, Lund 22100, Sweden
| | - Hynek Němec
- Institute of Physics of the Czech Academy of Sciences, Prague 18221, Czech Republic
| | - Xianshao Zou
- Chemical Physics and NanoLund, Lund University, Lund 22100, Sweden.
| | - Wei Zhang
- School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China.
| | | | - Arkady Yartsev
- Chemical Physics and NanoLund, Lund University, Lund 22100, Sweden.
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30
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Ren D, Rong Z, Kim H, Turan D, Huffaker DL. High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays. OPTICS LETTERS 2019; 44:4666-4669. [PMID: 31568412 DOI: 10.1364/ol.44.004666] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Accepted: 08/24/2019] [Indexed: 06/10/2023]
Abstract
There has been a growing interest in developing high-efficiency ultrafast optical-to-electrical converters for advanced imaging and sensing applications. Here, we propose a three-dimensional (3D) plasmonic platform based on InAs nanowire arrays with self-assembled gold gratings, which converts a telecom-wavelength (1550 nm) optical beam to sub-picosecond current pulses with quantum efficiency up to 18.3%, while operating in photovoltaic mode, i.e., at zero bias. Using a comprehensive 3D photoresponse model, we reveal that the incident photons form tightly confined fields near the gratings at nanowire tips, and thus a majority of the photogenerated carriers are efficiently routed to the metal within a few tens of nanometers distance, resulting in ultrafast current pulses. In addition, we show that the amplitude of current pulses is robust to the nanowire surface quality and can be effectively tuned by varying the doping levels in nanowires. This work paves a way to realizing a low-power, highly compact, and low-cost device scheme for ultrafast pulse generation.
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31
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Shojaei IA, Linser S, Jnawali G, Wickramasuriya N, Jackson HE, Smith LM, Kargar F, Balandin AA, Yuan X, Caroff P, Tan HH, Jagadish C. Strong Hot Carrier Effects in Single Nanowire Heterostructures. NANO LETTERS 2019; 19:5062-5069. [PMID: 31242390 DOI: 10.1021/acs.nanolett.9b01345] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs0.7Sb0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs0.7Sb0.3 nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.
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Affiliation(s)
- Iraj Abbasian Shojaei
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Samuel Linser
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Giriraj Jnawali
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - N Wickramasuriya
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Howard E Jackson
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Leigh M Smith
- Department of Physics , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Fariborz Kargar
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Alexander A Balandin
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Xiaoming Yuan
- School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P.R. China
| | - Philip Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
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32
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Himwas C, Collin S, Chen HL, Patriarche G, Oehler F, Travers L, Saket O, Julien FH, Harmand JC, Tchernycheva M. Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires. NANOTECHNOLOGY 2019; 30:304001. [PMID: 30965307 DOI: 10.1088/1361-6528/ab1760] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on the structural and optical properties of GaAs0.7P0.3/GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW.
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Affiliation(s)
- C Himwas
- Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris Sud, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, F-91120 Palaiseau Cedex, France. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand
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33
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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34
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Zhang K, Li X, Dai W, Toor F, Prineas JP. Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core-Shell Nanowires Grown on Silicon. NANO LETTERS 2019; 19:4272-4278. [PMID: 31244233 DOI: 10.1021/acs.nanolett.9b00517] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on carrier recombination within self-catalyzed InAs/InAlAs core-shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump-probe spectroscopy measurements were performed from 77-293 K on the free-standing, variable-sized NWs grown on lattice-mismatched Si(111) substrates, independently varying NW length and diameter. We found NW carrier recombination in the interior is nontrivial compared to the surface recombination, especially at 293 K. Surface recombination is dominated by carrier recombination at the NW sidewall, while contributions from the highly strained, impure NW base are negligible.
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35
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Chu CH, Mao MH, Yang CW, Lin HH. A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices. Sci Rep 2019; 9:9426. [PMID: 31263209 PMCID: PMC6603194 DOI: 10.1038/s41598-019-46020-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 06/20/2019] [Indexed: 11/30/2022] Open
Abstract
Spatially resolved current measurements such as scanning photocurrent microscopy (SPCM) have been extensively applied to investigate carrier transport properties in semiconductor nanowires. A traditional simple-exponential-decay formula based on the assumption of carrier diffusion dominance in the scanning photocurrent profiles can be applied for carrier diffusion length extraction using SPCM in Schottky-contact-based or p-n junction-based devices where large built-in electric fields exist. However, it is also important to study the electric-field dependent transport properties in widely used ohmic-contact nanowire devices where the assumption of carrier diffusion dominance is invalid. Here we derive an analytic formula for scanning photocurrent profiles in such ohmic-contact nanowire devices under uniform applied electric fields and weak optical excitation. Under these operation conditions and the influence of photo-carrier-induced electric field, the scanning photocurrent profile and the carrier spatial distribution strikingly do not share the same functional form. Instead, a surprising new analytic relation between the scanning photocurrent profile and the minority carrier decay length was established. Then the derived analytic formula was validated numerically and experimentally. This analytic formula provides a new fitting method for SPCM profiles to correctly determine the minority carrier decay length, which allows us to quantitatively evaluate the performance of nanowire-based devices.
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Affiliation(s)
- Cheng-Hao Chu
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
| | - Ming-Hua Mao
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan. .,Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan. .,Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan.
| | - Che-Wei Yang
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
| | - Hao-Hsiung Lin
- Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan.,Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan.,Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
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36
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Xu S, Yang J, Jiang H, Su F, Zeng Z. Transient photoconductivity and free carrier dynamics in a monolayer WS 2 probed by time resolved Terahertz spectroscopy. NANOTECHNOLOGY 2019; 30:265706. [PMID: 30861497 DOI: 10.1088/1361-6528/ab0f02] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The frequency and time resolved conductivity in a photoexcited large-area monolayer tungsten disulfide (WS2) have been simultaneously determined by using time-resolved terahertz spectroscopy. We use the Drude-Smith model to successfully reproduce the transient photoconductivity spectra, which demonstrate that localized free carriers, not bounded excitons, are responsible for the THz transport. Upon the optical excitation with 400 nm and 530 nm wavelength, the relaxation dynamics of the free carriers include fast and slow decay components with time constants approximately smaller than 1 ps and between 5-7 ps, respectively. The former sub-picosecond decay is attributed to the charge carrier loss induced by the exciton formation, while both the Auger recombination and the surface trapping can contribute to the slow relaxation.
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Affiliation(s)
- Shujuan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China. University of Science and Technology of China, Hefei 230026, People's Republic of China
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37
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Fotev I, Balaghi L, Schmidt J, Schneider H, Helm M, Dimakis E, Pashkin A. Electron dynamics in In x Ga 1-x As shells around GaAs nanowires probed by terahertz spectroscopy. NANOTECHNOLOGY 2019; 30:244004. [PMID: 30790771 DOI: 10.1088/1361-6528/ab0913] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We present the electrical properties of GaAs/In x Ga1-x As core/shell nanowires (NWs) measured by ultrafast optical pump-terahertz probe spectroscopy. This contactless technique was used to measure the photoconductivity of NWs with shell compositions of x = 0.20, 0.30 and 0.44. The results were fitted with the model of localized surface plasmon in a cylinder in order to obtain electron mobilities, concentrations and lifetimes in the In x Ga1-x As NW shells. The estimated lifetimes are about 80-100 ps and the electron mobility reaches 3700 cm2 V-1 s-1 at room temperature. This makes GaAs/InGaAs NWs good candidates for the realization of high-electron-mobility transistors, which can also be monolithically integrated in Si-CMOS circuits.
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Affiliation(s)
- Ivan Fotev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden, Germany. Technische Universität Dresden, D-01062 Dresden, Germany
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38
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Güniat L, Martí-Sánchez S, Garcia O, Boscardin M, Vindice D, Tappy N, Friedl M, Kim W, Zamani M, Francaviglia L, Balgarkashi A, Leran JB, Arbiol J, Fontcuberta I Morral A. III-V Integration on Si(100): Vertical Nanospades. ACS NANO 2019; 13:5833-5840. [PMID: 31038924 DOI: 10.1021/acsnano.9b01546] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
III-V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. The Ga droplet is positioned at the tip of an ultrathin Si pillar with a radial oxide envelope. The pinning at the Si/oxide interface allows the engineering of the contact angle beyond the Young-Dupré equation and the growth of vertical nanospades. Nanospades exhibit a virtually defect-free bicrystalline nature. Our growth model explains how a pentagonal twinning event at the initial stages of growth provokes the formation of the nanospade. The optical properties of the nanospades are consistent with the high crystal purity, making these structures viable for use in integration of optoelectronics on the Si(100) platform.
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Affiliation(s)
- Lucas Güniat
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona , Catalonia , Spain
| | - Oscar Garcia
- UPC - Universitat Politècnica de Catalunya , Calle Jordi Girona, 1-3 , 08034 Barcelona , Spain
| | - Mégane Boscardin
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - David Vindice
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Nicolas Tappy
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Martin Friedl
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Wonjong Kim
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Mahdi Zamani
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Luca Francaviglia
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Akshay Balgarkashi
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Jean-Baptiste Leran
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona , Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
- Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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39
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Zhang Y, Davis G, Fonseka HA, Velichko A, Gustafsson A, Godde T, Saxena D, Aagesen M, Parkinson PW, Gott JA, Huo S, Sanchez AM, Mowbray DJ, Liu H. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement. ACS NANO 2019; 13:5931-5938. [PMID: 31067033 PMCID: PMC7007272 DOI: 10.1021/acsnano.9b01775] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 05/08/2019] [Indexed: 06/01/2023]
Abstract
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Anders Gustafsson
- Solid
State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Tillmann Godde
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Dhruv Saxena
- The
Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Martin Aagesen
- Danish
Defence Research Center, Lautrupbjerg 1-5, 2750 Ballerup, Denmark
| | - Patrick W. Parkinson
- School
of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Suguo Huo
- London
Centre for Nanotechnology, University College
London, London WC1H 0AH, United Kingdom
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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40
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Aziziyan MR, Sharma H, Dubowski JJ. Photo-Atomic Layer Etching of GaAs/AlGaAs Nanoheterostructures. ACS APPLIED MATERIALS & INTERFACES 2019; 11:17968-17978. [PMID: 31013049 DOI: 10.1021/acsami.9b02079] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Photo-atomic layer etching (photo-ALE) of GaAs and AlGaAs semiconductors was investigated in deionized H2O and aqueous solution of NH4OH under weak excitation conditions ( P ≈ 20 mW/cm2). The process is based on digital photocorrosion in a processed solution and a negligible corrosion during the light-off phase employed for dissolution of the photocorrosion products. An inductively coupled plasma mass spectroscopy (ICP-MS) analysis revealed that photo-ALE of GaAs in an aqueous solution of NH4OH proceeds linearly with the number of reaction cycles, typically at ∼0.1 nm/cycle, and with the light-off phase as short as 22 s sufficient to entirely dissolve the photocorrosion products generated during a 3 s irradiation. In agreement with the ICP-MS data, the constant photo-ALE rates in NH4OH were also demonstrated in situ with the photoluminescence measurements. Our results suggest that the congruent decomposition of III-V materials and the etching of deep structures with atomic layer resolution could be facilitated by switching in situ between different etching environments.
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Affiliation(s)
- Mohammad R Aziziyan
- Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada
| | - Hemant Sharma
- Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada
| | - Jan J Dubowski
- Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation (3IT), CNRS UMI-3463, Department of Electrical and Computer Engineering, Université de Sherbrooke , 3000, boul. de l'Université , Sherbrooke , Québec J1K 0A5 , Canada
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41
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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42
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Ren D, Azizur-Rahman KM, Rong Z, Juang BC, Somasundaram S, Shahili M, Farrell AC, Williams BS, Huffaker DL. Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al 2O 3 Passivation. NANO LETTERS 2019; 19:2793-2802. [PMID: 30676752 DOI: 10.1021/acs.nanolett.8b04420] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photodetectors at MWIR composed of vertical selective-area InAsSb nanowire photoabsorber arrays on large bandgap InP substrate with nanoscale plasmonic gratings. We accomplish this by significantly suppressing the nonradiative recombination at the InAsSb nanowire surfaces by introducing ex situ conformal Al2O3 passivation shells. Transient simulations estimate an extremely low surface recombination velocity on the order of 103 cm/s. We further achieve room-temperature photoluminescence emission from InAsSb nanowires, spanning the entire MWIR regime from 3 to 5 μm. A dry-etching process is developed to expose only the top nanowire facets for metal contacts, with the sidewalls conformally covered by Al2O3 shells, allowing for a higher internal quantum efficiency. Based on these techniques, we fabricate nanowire photodetectors with an optimized pitch and diameter and demonstrate room-temperature spectral response with MWIR detection signatures up to 3.4 μm. The results of this work indicate that uncooled focal plane arrays at MWIR on low-cost InP substrates can be designed with nanostructured absorbers for highly compact and fully integrated detection platforms.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Bor-Chau Juang
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Mohammad Shahili
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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43
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Zhang D, Gu L, Zhang Q, Lin Y, Lien DH, Kam M, Poddar S, Garnett EC, Javey A, Fan Z. Increasing Photoluminescence Quantum Yield by Nanophotonic Design of Quantum-Confined Halide Perovskite Nanowire Arrays. NANO LETTERS 2019; 19:2850-2857. [PMID: 30933527 DOI: 10.1021/acs.nanolett.8b04887] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
High-photoluminescence quantum yield (PLQY) is required to reach optimal performance in solar cells, lasers, and light-emitting diodes (LEDs). Typically, PLQY can be increased by improving the material quality to reduce the nonradiative recombination rate. It is in principle equally effective to improve the optical design by nanostructuring a material to increase light out-coupling efficiency (OCE) and introduce quantum confinement, both of which can increase the radiative recombination rate. However, increased surface recombination typically minimizes nanostructure gains in PLQY. Here a template-guided vapor phase growth of CH3NH3PbI3 (MAPbI3) nanowire (NW) arrays with unprecedented control of NW diameter from the bulk (250 nm) to the quantum confined regime (5.7 nm) is demonstrated, while simultaneously providing a low surface recombination velocity of 18 cm s-1. This enables a 56-fold increase in the internal PLQY, from 0.81% to 45.1%, and a 2.3-fold increase in OCEy to increase the external PLQY by a factor of 130, from 0.33% up to 42.6%, exclusively using nanophotonic design.
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Affiliation(s)
- Daquan Zhang
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
| | - Leilei Gu
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
| | - Yuanjing Lin
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | - Der-Hsien Lien
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Matthew Kam
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
| | - Erik C Garnett
- Center for Nanophotonics , AMOLF , Science Park 104 , 1098 XG Amsterdam , The Netherlands
| | - Ali Javey
- Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering , The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon , Hong Kong SAR , China
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Li X, Zhang K, Treu J, Stampfer L, Koblmueller G, Toor F, Prineas JP. Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core-Shell Nanowires on Silicon. NANO LETTERS 2019; 19:990-996. [PMID: 30620205 DOI: 10.1021/acs.nanolett.8b04226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Contactless time-resolved optical pump-probe and external quantum efficiency measurements were performed in epitaxially grown free-standing wurtzite indium arsenide/indium aluminum arsenide (InAs-InAlAs) core-shell nanowires on Si (111) substrate from 77 to 293 K. The first independent investigation of Shockley-Read-Hall, radiative, and Auger recombination in InAs-based NWs is presented. Although the Shockley-Read-Hall recombination coefficient was found to be at least 2 orders of magnitude larger than the average experimental values of other reported InAs materials, the Auger recombination coefficient was reported to be 10-fold smaller. The very low Auger and high radiative rates result in an estimated peak internal quantum efficiency of the core-shell nanowires as high as 22% at 77 K, making these nanowires of potential interest for high-efficiency mid-infrared emitters. A greater than 2-fold enhancement in minority carrier lifetime was observed from capping nanowires with a thin InAlAs shell due to the passivation of surface defects.
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Affiliation(s)
| | | | - Julian Treu
- Walter Schottky Institut and Physics Department , Technical University Munich , Garching 85748 , Germany
| | - Lukas Stampfer
- Walter Schottky Institut and Physics Department , Technical University Munich , Garching 85748 , Germany
| | - Gregor Koblmueller
- Walter Schottky Institut and Physics Department , Technical University Munich , Garching 85748 , Germany
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45
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Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. SCIENCE ADVANCES 2019; 5:eaat8896. [PMID: 30801006 PMCID: PMC6386577 DOI: 10.1126/sciadv.aat8896] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 12/28/2018] [Indexed: 05/28/2023]
Abstract
Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
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Affiliation(s)
- Guoqiang Zhang
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Kouta Tateno
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takehiko Tawara
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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46
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Alanis JA, Lysevych M, Burgess T, Saxena D, Mokkapati S, Skalsky S, Tang X, Mitchell P, Walton AS, Tan HH, Jagadish C, Parkinson P. Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing. NANO LETTERS 2019; 19:362-368. [PMID: 30525674 DOI: 10.1021/acs.nanolett.8b04048] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate ( knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm-3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.
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Affiliation(s)
| | | | | | - Dhruv Saxena
- The Blackett Laboratory, Department of Physics , Imperial College London , London SW7 2AZ , United Kingdom
| | - Sudha Mokkapati
- School of Physics and Astronomy and the Institute for Compound Semiconductors , Cardiff University , Cardiff , CF10 3AT , United Kingdom
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Chayanun L, Otnes G, Troian A, Hammarberg S, Salomon D, Borgström MT, Wallentin J. Nanoscale mapping of carrier collection in single nanowire solar cells using X-ray beam induced current. JOURNAL OF SYNCHROTRON RADIATION 2019; 26:102-108. [PMID: 30655474 PMCID: PMC6337893 DOI: 10.1107/s1600577518015229] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2018] [Accepted: 10/28/2018] [Indexed: 05/22/2023]
Abstract
Here it is demonstrated how nanofocused X-ray beam induced current (XBIC) can be used to quantitatively map the spatially dependent carrier collection probability within nanostructured solar cells. The photocurrent generated by a 50 nm-diameter X-ray beam was measured as a function of position, bias and flux in single p-i-n doped solar-cell nanowires. The signal gathered mostly from the middle segment decays exponentially toward the p- and n-segments, with a characteristic decay length that varies between 50 nm and 750 nm depending on the flux and the applied bias. The amplitude of the XBIC shows saturation at reverse bias, which indicates that most carriers are collected. At forward bias, the relevant condition for solar cells, the carrier collection is only efficient in a small region. Comparison with finite element modeling suggests that this is due to unintentional p-doping in the middle segment. It is expected that nanofocused XBIC could be used to investigate carrier collection in a wide range of nanostructured solar cells.
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Affiliation(s)
- Lert Chayanun
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Gaute Otnes
- Solid State Physics and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Andrea Troian
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Susanna Hammarberg
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Damien Salomon
- European Synchrotron Radiation Facility, 71 avenue des Martyrs, Grenoble 38043, France
| | - Magnus T. Borgström
- Solid State Physics and NanoLund, Lund University, Box 118, Lund 22100, Sweden
| | - Jesper Wallentin
- Synchrotron Radiation Research and NanoLund, Lund University, Box 118, Lund 22100, Sweden
- Correspondence e-mail:
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48
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Chayanun L, Dagytė V, Troian A, Salomon D, Borgström M, Wallentin J. Spectrally resolved x-ray beam induced current in a single InGaP nanowire. NANOTECHNOLOGY 2018; 29:454001. [PMID: 30136654 DOI: 10.1088/1361-6528/aadc76] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We demonstrate x-ray absorption fine structure spectroscopy (XAFS) detected by x-ray beam induced current (XBIC) in single n + -i-n + doped nanowire devices. Spatial scans with the 65 nm diameter beam show a peak of the XBIC signal in the middle segment of the nanowire. The XBIC and the x-ray fluorescence signals were detected simultaneously as a function of the excitation energy near the Ga K absorption edge at 10.37 keV. The spectra show similar oscillations around the edge, which shows that the XBIC is limited by the primary absorption. Our results reveal the feasibility of the XBIC detection mode for the XAFS investigation in nanostructured devices.
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Affiliation(s)
- Lert Chayanun
- Synchrotron Radiation Research and NanoLund, Lund University, Lund, Sweden
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49
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Li T, Shen R, Sun M, Pan D, Zhang J, Xu J, Zhao J, Chen Q. Improving the electrical properties of InAs nanowire field effect transistors by covering them with Y 2O 3/HfO 2 layers. NANOSCALE 2018; 10:18492-18501. [PMID: 30132773 DOI: 10.1039/c8nr05680c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Quasi-one-dimensional semiconducting materials have attracted increasing attention due to their excellent ability to downscale the size of transistors. However, in quasi-one-dimensional nanowire (NW) transistors, their surface and interface properties play a very important role mainly due to the large surface-to-volume ratio of NWs and surface scattering, which degrade their carrier mobility. Herein, we developed a new method to cover the channel surface of InAs NW field effect transistors (FETs) with Y2O3/HfO2 layers to improve their electrical properties. We successfully fabricated nine FETs and measured their electrical properties, which improve after depositing the Y2O3/HfO2 layers, including an increase in on-state current, decrease in off-state current, increase in transconductance, increase in electron mobility and decrease in subthreshold swing. By comparing the properties of Y2O3/HfO2-covered devices with that of the FETs fabricated without the Y2O3 covering or without annealing, we prove that it is the combined Y2O3/HfO2 layers instead of only the Y2O3 or HfO2 layer that improve the electrical properties of the FETs. The Cs-corrected high-resolution scanning transmission electron microscopy study demonstrates that Y can actually diffuse through the native oxide layer (confirmed to be InOx) and reach the surface of the InAs NWs. Our results indicate that the desirable characteristics of Y2O3 and the surface passivation by HfO2 improve the electrical properties of the InAs NW FETs, in which Y2O3 plays an important role to modify and stabilize the interface between the InAs NWs and the outside dielectric layer. Furthermore, this method should also be applicable to other III-V materials.
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Affiliation(s)
- Tong Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China.
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50
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Yang W, Pan D, Shen R, Wang X, Zhao J, Chen Q. Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate. NANOTECHNOLOGY 2018; 29:415203. [PMID: 30052527 DOI: 10.1088/1361-6528/aad67c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The excess OFF-state current caused by band to band tunneling (BTBT) is a serious issue particularly in short-channel nanowire (NW) field-effect transistors (FETs), especially for narrow bandgap semiconductors such as InAs. Here, to clarify the components of the OFF-current and suppress the OFF-current, we for the first time fabricate and study InAs NW FETs with nanoscale partial-gate (PG). We fabricate a series of PGFETs and a normal full-gate (FG) FET on the same NW. Based on our results, the BTBT current component can reach tens of nanoamps in a typical 250 nm-channel InAs NW FGFET, and dominate the OFF-current. In contrast, there is almost no BTBT component in the PGFET, which provides a reference for other short-channel InAs NW FETs. Furthermore, the physical mechanism of the OFF-state carrier transport is discussed, and both electrons and holes currents are proven to be very important, based on our experimental results. Also, through statistic study, we find the BTBT effect can be more serious in the devices with better gate-control. Therefore, suppressing the BTBT effect is important to the future scaling-down.
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Affiliation(s)
- Wenyuan Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
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