Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

Scanning Probe Microscopies for Characterizations of 2D Materials

2D materials are intriguing due to their remarkably thin and flat structure. This unique configuration allows the majority of their constituent atoms to be accessible on the surface, facilitating easier electron tunneling while generating weak surface forces. To decipher the subtle signals inherent in these materials, the application of techniques that offer atomic resolution (horizontal) and sub-Angstrom (z-height vertical) sensitivity is crucial. Scanning probe microscopy (SPM) emerges as the quintessential tool in this regard, owing to its atomic-level spatial precision, ability to detect unitary charges, responsiveness to pico-newton-scale forces, and capability to discern pico-ampere currents. Furthermore, the versatility of SPM to operate under varying environmental conditions, such as different temperatures and in the presence of various gases or liquids, opens up the possibility of studying the stability and reactivity of 2D materials in situ. The characteristic flatness, surface accessibility, ultra-thinness, and weak signal strengths of 2D materials align perfectly with the capabilities of SPM technologies, enabling researchers to uncover the nuanced behaviors and properties of these advanced materials at the nanoscale and even the atomic scale.

Aperiodic Modulation of Graphene Driven by Oxygen-Induced Reconstruction of Rh(110)

Artificial nanostructuring of graphene has served as a platform to induce variations in its structural and electronic properties, fostering the experimental observation of a wide and fascinating phenomenology. Here, we present an approach to graphene tuning, based on Rh(110) surface reconstruction induced by oxygen atoms intercalation. The resulting nanostructured graphene has been characterized by scanning tunneling microscopy (STM) complemented by low-energy electron microscopy (LEEM), micro low-energy electron diffraction (μ-LEED), micro angle-resolved photoemission spectroscopy (μ-ARPES), and micro X-ray photoelectron spectroscopy (μ-XPS) measurements under ultrahigh vacuum (UHV) conditions at room temperature (RT). It is found that by fine-tuning the O2 exposure amount, a mixture of missing row surface reconstructions of the metal surface below the graphene layer can be induced. This atomic rearrangement under the graphene layer results in aperiodic patterning of the two-dimensional (2D) material. The electronic structure of the resulting nanostructured graphene is dominated by a linear dispersion of the Dirac quasiparticles, characteristic of its free-standing state but with a p-doping character. The local effects of the underlying missing rows on the interfacial chemistry and on the quasiparticle scattering processes in graphene are studied using atomically resolved STM images. The possibilities offered by this nanostructuring approach, which consists in inducing surface reconstructions under graphene, could provide a novel tuning strategy for this 2D material.

Regulating the Electronic Structure of Freestanding Graphene on SiC by Ge/Sn Intercalation: A Theoretical Study

The intrinsic n-type of epitaxial graphene on SiC substrate limits its applications in microelectronic devices, and it is thus vital to modulate and achieve p-type and charge-neutral graphene. The main groups of metal intercalations, such as Ge and Sn, are found to be excellent candidates to achieve this goal based on the first-principle calculation results. They can modulate the conduction type of graphene via intercalation coverages and bring out interesting magnetic properties to the entire intercalation structures without inducing magnetism to graphene, which is superior to the transition metal intercalations, such as Fe and Mn. It is found that the Ge intercalation leads to ambipolar doping of graphene, and the p-type graphene can only be obtained when forming the Ge adatom between Ge layer and graphene. Charge-neutral graphene can be achieved under high Sn intercalation coverage (7/8 bilayer) owing to the significantly increased distance between graphene and deformed Sn intercalation. These findings would open up an avenue for developing novel graphene-based spintronic and electric devices on SiC substrate.

Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields

Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. The work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.

Relation between interfacial shear and friction force in 2D materials

Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer-substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. The same relationship emerges from simulations with simple friction models, where the atomic layer-substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.

Tip-Mediated Bandgap Tuning for Monolayer Transition Metal Dichalcogenides

Monolayer transition metal dichalcogenides offer an appropriate platform for developing advanced electronics beyond graphene. Similar to two-dimensional molecular frameworks, the electronic properties of such monolayers can be sensitive to perturbations from the surroundings; the implied tunability of electronic structure is of great interest. Using scanning tunneling microscopy/spectroscopy, we demonstrated a bandgap engineering technique in two monolayer materials, MoS₂ and PtTe₂, with the tunneling current as a control parameter. The bandgap of monolayer MoS₂ decreases logarithmically by the increasing tunneling current, indicating an electric-field-induced gap renormalization effect. Monolayer PtTe₂, by contrast, exhibits a much stronger gap reduction, and a reversible semiconductor-to-metal transition occurs at a moderate tunneling current. This unusual switching behavior of monolayer PtTe₂, not seen in bulk semimetallic PtTe₂, can be attributed to its surface electronic structure that can readily couple to the tunneling tip, as demonstrated by theoretical calculations.

Two-Way Twisting of a Confined Monolayer: Orientational Ordering within the van der Waals Gap between Graphene and Its Crystalline Substrate

Two-dimensional confinement of lattices produces a variety of order and disorder phenomena. When the confining walls have atomic granularity, unique structural phases are expected, of relevance in nanotribology, porous materials, or intercalation compounds where, e.g., electronic states can emerge accordingly. The interlayer's own order is frustrated by the competing interactions exerted by the two confining surfaces. We revisit the concept of orientational ordering, introduced by Novaco and McTague to describe the twist of incommensurate monolayers on crystalline surfaces. We predict a two-way twist of the monolayer as its density increases. We discover such a behavior in alkali atom monolayers (sodium, cesium) confined between graphene and an iridium surface, using scanning tunneling microscopy and electron diffraction.

Direct Observation of Global Elastic Intervalley Scattering Induced by Impurities on Graphene

The scattering process induced by impurities in graphene plays a key role in transport properties. Especially, the disorder impurities can drive the ordered state with a hexagonal superlattice on graphene by electron-mediated interaction at a transition temperature. Using angle-resolved photoemission spectroscopy (ARPES), we reveal that the epitaxial monolayer and bilayer graphene with various impurities display global elastic intervalley scattering and quantum interference below the critical temperature (34 K), which leads to a set of new folded Dirac cones at the Brillouin-zone center by mixing two inequivalent Dirac cones. The Dirac electrons generated from intervalley scattering without chirality can be due to the breaking of the sublattice symmetry. In addition, the temperature-dependent ARPES measurements indicate the thermal damping of quantum interference patterns from Dirac electron scattering on impurities. Our results demonstrate that the electron scattering and interference induced by impurities can completely modulate the Dirac bands of graphene.

Multiple charge density wave phases of monolayer VSe2manifested by graphene substrates

A combined study of scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) is conducted to understand the multiple charge density wave (CDW) phases of monolayer (ML) VSe₂films manifested by graphene substrates. Submonolayer (∼0.8 ML) VSe₂films are prepared on two different substrates of single-layer graphene (SLG) and bi-layer graphene (BLG) on a 6H-SiC(0001). We find that ML VSe₂films are less coupled to the SLG substrate compared to that of ML VSe₂/BLG. Then, ML VSe₂grown on SLG and BLG substrates reveals a very different topography in STM. While ML VSe₂/BLG shows one unidirectional modulation of √3 × 2 and √3 × √7 CDW in topography, ML VSe₂/SLG presents a clear modulation of 4 × 1 CDW interfering with √3 × 2 and √3 × √7 CDW which has not been previously observed. We explicitly show that the reciprocal vector of 4 × 1 CDW fits perfectly into the long parallel sections of cigar-shaped Fermi surfaces near the M point in ML VSe₂, satisfying Fermi surface nesting. Since bulk VSe₂is also well-known for the 4 × 4 × 3 CDW formed by Fermi surface nesting, the 4 × 1 CDW in ML VSe₂/SLG is attributed to the planar projection of 4 × 4 × 3 CDW in bulk. Our result clarifies the nature of the 4 × 1 CDW in ML VSe₂system and is a good example demonstrating the essential role of substrates in two-dimensional transition metal dichalcogenides.

Mechanism of CO Intercalation through the Graphene/Ni(111) Interface and Effect of Doping

Molecules intercalate at the graphene/metal interface even though defect-free graphene is impermeable to any atomic and molecular species in the gas and liquid phase, except hydrogen. The mechanism of molecular intercalation is still a big open question. In this Letter, by means of a combined experimental (STM, XPS, and LEED) and theoretical (DFT) study, we present a proof of how CO molecules succeed in permeating the graphene layer and get into the confined zone between graphene and the Ni(111) surface. The presence of N-dopants in the graphene layer is found to highly facilitate the permeation process, reducing the CO threshold pressure by more than one order of magnitude, through the stabilization of multiatomic vacancy defects that are the open doors to the bidimensional nanospace, with crucial implications for the catalysis under cover and for the graphene-based electrochemistry.

Structural and magnetic properties of a defective graphene buffer layer grown on SiC(0001): a DFT study

Understanding the role of defects in the magnetic properties of the graphene buffer layer (BL) grown on substrates should be important to provide hints for manufacturing future graphene-based spintronic devices in a controlled fashion. Herein, density functional theory was applied to assess the structure and magnetic properties of defective BL on 6H-SiC(0001). Particularly, we conducted a thorough study of one and two vacancies and Stone-Wales defects in the BL. Our results reveal that the removal of a carbon atom in the BL framework that was originally bonded to a Si atom in the substrate is preferred over that of a sp2-bonded atom. As a result, a hexacoordinated silicon atom is formed with a slightly deviated octahedral geometry. A stable antiferromagnetic (AF) state was verified for the single vacancy system, with a quite different spin-density distribution to the one obtained for the perfect BL. Also, this AF state is nearly degenerate with the non-magnetic and low magnetic states. As for the Stone-Wales defect, the AF sate is almost degenerate with the most stable M = 2 μB magnetic configuration. However, the introduction of two vacancies in the carbon network of BL causes the loss of magnetism of the BL-SiC system. Our theoretical calculations support experimental predictions favoring the BL as the site for single vacancy formation rather than the epitaxial monolayer graphene, by 4.3 eV.

Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe_{2} intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V_{W} dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V_{W} dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V_{W} dopants.

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Stacking order has a strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30°-twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have quasicrystal-like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG are investigated using scanning tunneling microscopy and spectroscopy. The energy-dependent local density of states with in situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG and provides insights on the electronic properties and interlayer coupling in this intriguing system.

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

The excellent optoelectronic properties of graphene give it great potential for applications in optical detection. Among the graphenes obtained through many synthetic methods, epitaxial graphene obtained by thermal decomposition on silicon carbide has remarkable advantages for preparing photodetectors. In this research, epitaxial graphene has been successfully prepared on a silicon surface (0001) of semi-insulating 4H-SiC substrate with a size of 10 mm × 10 mm and epitaxial graphene has been converted to quasi-free-standing graphene by hydrogen passivation. Two metal-graphene-metal photodetectors were fabricated using the two types of graphenes above and the photo-absorption properties of detectors have been investigated under 650-nm laser illumination with different illumination powers. From a comparison of the performances between the two detectors, it was found that a photodetector fabricated with quasi-free-standing graphene shows enhanced performance under a light power of 0.018 mW. Responsivity and external quantum efficiency reach maxima of 5.11 A/W and 9.74%, respectively. This dramatic improvement is mainly due to the disappearance of the buffer layer in epitaxial graphene, providing a new method to achieve optimization of graphene-based opto-electrical devices.

Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory

The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by means of Density Functional Theory. While the system of corrugation crests organized in a honeycomb super-lattice of nano-metric side returned by calculations is compatible with atomic microscopy observations, our work reveals some possible alternative symmetries, which might coexist in the same sample. The electronic structure analysis reveals the presence of an electronic gap of ~0.7 eV. In-gap states are present, localized over the crests, while near-gap states reveal very different structure and space localization, being either bonding states or outward pointing p orbitals and unsaturated Si dangling bonds. On one hand, the presence of these interface states was correlated with the n-doping of the monolayer graphene subsequently grown on the buffer. On the other hand, the correlation between their chemical character and their space localization is likely to produce a differential reactivity towards specific functional groups with a spatial regular modulation at the nano-scale, opening perspectives for a finely controlled chemical functionalization.

Dirac electrons in a dodecagonal graphene quasicrystal

Quantum states of quasiparticles in solids are dictated by symmetry. We have experimentally demonstrated quantum states of Dirac electrons in a two-dimensional quasicrystal without translational symmetry. A dodecagonal quasicrystalline order was realized by epitaxial growth of twisted bilayer graphene rotated exactly 30°. We grew the graphene quasicrystal up to a millimeter scale on a silicon carbide surface while maintaining the single rotation angle over an entire sample and successfully isolated the quasicrystal from a substrate, demonstrating its structural and chemical stability under ambient conditions. Multiple Dirac cones replicated with the 12-fold rotational symmetry were observed in angle-resolved photoemission spectra, which revealed anomalous strong interlayer coupling with quasi-periodicity. Our study provides a way to explore physical properties of relativistic fermions with controllable quasicrystalline orders.

Interfacial engineering in graphene bandgap

Graphene exhibits superior mechanical strength, high thermal conductivity, strong light-matter interactions, and, in particular, exceptional electronic properties. These merits make graphene an outstanding material for numerous potential applications. However, a graphene-based high-performance transistor, which is the most appealing application, has not yet been produced, which is mainly due to the absence of an intrinsic electronic bandgap in this material. Therefore, bandgap opening in graphene is urgently needed, and great efforts have been made regarding this topic over the past decade. In this review article, we summarise recent theoretical and experimental advances in interfacial engineering to achieve bandgap opening. These developments are divided into two categories: chemical engineering and physical engineering. Chemical engineering is usually destructive to the pristine graphene lattice via chemical functionalization, the introduction of defects, doping, chemical bonds with substrates, and quantum confinement; the latter largely maintains the atomic structure of graphene intact and includes the application of an external field, interactions with substrates, physical adsorption, strain, electron many-body effects and spin-orbit coupling. Although these pioneering works have not met all the requirements for electronic applications of graphene at once, they hold great promise in this direction and may eventually lead to future applications of graphene in semiconductor electronics and beyond.

Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene

Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe₂/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe₂ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe₂ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Few- and single-layer MoS₂ host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effects and identify to what extent they are intrinsic to the material or extrinsic to it, i.e., related to its local environment. We do so by using different sources of MoS₂-a natural one and one prepared at high pressure and high temperature-and different substrates bringing varying amounts of charged impurities and by separating the contributions of internal strain and doping in Raman spectra. Photoluminescence unveils various optically active excitonic complexes. We discover a defect-bound state having a low binding energy of 20 meV that does not appear sensitive to strain and doping, unlike charged excitons. Conversely, the defect does not significantly dope or strain MoS₂. Scanning tunneling microscopy and density functional theory simulations point to substitutional atoms, presumably individual nitrogen atoms at the sulfur site. Our work shows the way to a systematic understanding of the effect of external and internal fields on the optical properties of two-dimensional materials.

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Though much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density functional theory (DFT), to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.

Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC

Local electron-phonon coupling of a one-dimensionally nanorippled graphene is studied on a SiC(0001) vicinal substrate. We have characterized local atomic and electronic structures of a periodically nanorippled graphene (3.4 nm period) prepared on a macrofacet of the 6H-SiC crystal using scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES). The rippled graphene on the macrofacets distributes homogeneously over the 6H-SiC substrate in a millimeter scale, and thus replica bands are detected by the macroscopic ARPES. The STM/STS results indicate the strength of electron-phonon coupling to the out-of-plane phonon at the K̅ points of graphene is periodically modified in accordance with the ripple structure. We propose an interface carbon nanostructure with graphene nanoribbons between the surface rippled graphene and the substrate SiC that periodically modifies the electron-phonon coupling in the surface graphene.

Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer

The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp² hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.

High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)

Etching with atomic hydrogen, as a preparation step before the high-temperature growth process of graphene onto a thin 3C-SiC film grown on Si(111), greatly improves the structural quality of topmost graphene layers. Pit formation and island coalescence, which are typical of graphene growth by SiC graphitization, are quenched and accompanied by widening of the graphene domain sizes to hundreds of nanometers, and by a significant reduction in surface roughness down to a single substrate bilayer. The surface reconstructions expected for graphene and the underlying layer are shown with atomic resolution by scanning tunnelling microscopy. Spectroscopic features typical of graphene are measured by core-level photoemission and Raman spectroscopy.

Quasiparticle interference in unconventional 2D systems

At present, research of 2D systems mainly focuses on two kinds of materials: graphene-like materials and transition-metal dichalcogenides (TMDs). Both of them host unconventional 2D electronic properties: pseudospin and the associated chirality of electrons in graphene-like materials, and spin-valley-coupled electronic structures in the TMDs. These exotic electronic properties have attracted tremendous interest for possible applications in nanodevices in the future. Investigation on the quasiparticle interference (QPI) in 2D systems is an effective way to uncover these properties. In this review, we will begin with a brief introduction to 2D systems, including their atomic structures and electronic bands. Then, we will discuss the formation of Friedel oscillation due to QPI in constant energy contours of electron bands, and show the basic concept of Fourier-transform scanning tunneling microscopy/spectroscopy (FT-STM/STS), which can resolve Friedel oscillation patterns in real space and consequently obtain the QPI patterns in reciprocal space. In the next two parts, we will summarize some pivotal results in the investigation of QPI in graphene and silicene, in which systems the low-energy quasiparticles are described by the massless Dirac equation. The FT-STM experiments show there are two different interference channels (intervalley and intravalley scattering) and backscattering suppression, which associate with the Dirac cones and the chirality of quasiparticles. The monolayer and bilayer graphene on different substrates (SiC and metal surfaces), and the monolayer and multilayer silicene on a Ag(1 1 1) surface will be addressed. The fifth part will introduce the FT-STM research on QPI in TMDs (monolayer and bilayer of WSe₂), which allow us to infer the spin texture of both conduction and valence bands, and present spin-valley coupling by tracking allowed and forbidden scattering channels.

The investigation of cobalt intercalation underneath epitaxial graphene on 6H-SiC(0 0 0 1)

The intercalation behaviour of cobalt underneath both epitaxial graphene monolayer and bilayer on 6H-SiC(0001) have been investigated by scanning tunneling microscopy (STM) and density functional theory (DFT). Upon deposition, cobalt atoms prefer to agglomerate into clusters on the epitaxial graphene. After annealing the sample to 850 °C, the intercalation of the adsorbed cobalt atoms into both monolayer and bilayer epitaxial graphene on SiC takes place, as observed by the atomically resolved STM images. Further studies based on DFT modeling and simulated STM images show that, resulting from the interplay between the intercalated cobalt atoms and the carbon layers sandwiching it, the most energetically favourable intercalation sites of cobalt atoms underneath monolayer and bilayer graphene differ. Furthermore, the results show energy barriers of 0.60 eV and 0.41 eV for cobalt penetration through mono-vacancy defects at monolayer and bilayer graphene.

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of a substrate, are investigated by first-principles calculations. The six-layered substrate, corrugated buffer layer, and slightly deformed monolayer graphene are all simulated. Adatom arrangements are thoroughly studied by analyzing the ground-state energies, bismuth adsorption energies, and Bi-Bi interaction energies of different adatom heights, inter-adatom distance, adsorption sites, and hexagonal positions. A hexagonal array of Bi atoms is dominated by the interactions between the buffer layer and the monolayer graphene. An increase in temperature can overcome a ∼50 meV energy barrier and induce triangular and rectangular nanoclusters. The most stable and metastable structures agree with the scanning tunneling microscopy measurements. The density of states exhibits a finite value at the Fermi level, a dip at ∼-0.2 eV, and a peak at ∼-0.6 eV, as observed in the experimental measurements of the tunneling conductance.

Flexible 2D Crystals of Polycyclic Aromatics Stabilized by Static Distortion Waves

The epitaxy of many organic films on inorganic substrates can be classified within the framework of rigid lattices which helps to understand the origin of energy gain driving the epitaxy of the films. Yet, there are adsorbate-substrate combinations with distinct mutual orientations for which this classification fails and epitaxy cannot be explained within a rigid lattice concept. It has been proposed that tiny shifts in atomic positions away from ideal lattice points, so-called static distortion waves (SDWs), are responsible for the observed orientational epitaxy in such cases. Using low-energy electron diffraction and scanning tunneling microscopy, we provide direct experimental evidence for SDWs in organic adsorbate films, namely hexa-peri-hexabenzocoronene on graphite. They manifest as wave-like sub-Ångström molecular displacements away from an ideal adsorbate lattice which is incommensurate with graphite. By means of a density-functional-theory based model, we show that, due to the flexibility in the adsorbate layer, molecule-substrate energy is gained by straining the intermolecular bonds and that the resulting total energy is minimal for the observed domain orientation, constituting the orientational epitaxy. While structural relaxation at an interface is a common assumption, the combination of the precise determination of the incommensurate epitaxial relation, the direct observation of SDWs in real space, and their identification as the sole source of epitaxial energy gain constitutes a comprehensive proof of this effect.

Understanding the STM images of epitaxial graphene on a reconstructed 6H-SiC(0001) surface: the role of tip-induced mechanical distortion of graphene

Maxima in the STM images of epitaxial graphene (EG) on SiC(0001) (cyan) differ from topographic bumps in AFM images (green) by a separation distance of 1 nm, which is a result of two effects: the tip-induced distortion of EG and the asymmetric profile of the LDOS of the buffer layer.

Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum

In this work, we demonstrate direct van der Waals epitaxy of MoS2-graphene heterostructures on a semiconducting silicon carbide (SiC) substrate under ultrahigh vacuum conditions. Angle-resolved photoemission spectroscopy (ARPES) measurements show that the electronic structure of free-standing single-layer (SL) MoS2 is retained in these heterostructures due to the weak van der Waals interaction between adjacent materials. The MoS2 synthesis is based on a reactive physical vapor deposition technique involving Mo evaporation and sulfurization in a H2S atmosphere on a template consisting of epitaxially grown graphene on SiC. Using scanning tunneling microscopy, we study the seeding of Mo on this substrate and the evolution from nanoscale MoS2 islands to SL and bilayer (BL) MoS2 sheets during H2S exposure. Our ARPES measurements of SL and BL MoS2 on graphene reveal the coexistence of the Dirac states of graphene and the expected valence band of MoS2 with the band maximum shifted to the corner of the Brillouin zone at K̅ in the SL limit. We confirm the 2D character of these electronic states via a lack of dispersion with photon energy. The growth of epitaxial MoS2-graphene heterostructures on SiC opens new opportunities for further in situ studies of the fundamental properties of these complex materials, as well as perspectives for implementing them in various device schemes to exploit their many promising electronic and optical properties.

THz saturable absorption in turbostratic multilayer graphene on silicon carbide

We investigated the room-temperature Terahertz (THz) response as saturable absorber of turbostratic multilayer graphene grown on the carbon-face of silicon carbide. By employing an open-aperture z-scan method and a 2.9 THz quantum cascade laser as source, a 10% enhancement of transparency is observed. The saturation intensity is several W/cm2, mostly attributed to the Pauli blocking effect in the intrinsic graphene layers. A visible increase of the modulation depth as a function of the number of graphene sheets was recorded as consequence of the low nonsaturable losses. The latter in turn revealed that crystalline disorder is the main limitation to larger modulations, demonstrating that the THz nonlinear absorption properties of turbostratic graphene can be engineered via a proper control of the crystalline disorder and the layers number.

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H-SiC(0001) surface during scanning tunneling and atomic force microscopy studies

The structural and mechanical properties of an epitaxial graphene (EG) monolayer thermally grown on top of a 6H-SiC(0001) surface were studied by combined dynamic scanning tunneling microscopy (STM) and frequency modulation atomic force microscopy (FM-AFM). Experimental STM, dynamic STM and AFM images of EG on 6H-SiC(0001) show a lattice with a 1.9 nm period corresponding to the (6 × 6) quasi-cell of the SiC surface. The corrugation amplitude of this (6 × 6) quasi-cell, measured from AFM topographies, increases with the setpoint value of the frequency shift Δf (15-20 Hz, repulsive interaction). Excitation variations map obtained simultaneously with the AFM topography shows that larger dissipation values are measured in between the topographical bumps of the (6 × 6) quasi-cell. These results demonstrate that the AFM tip deforms the graphene monolayer. During recording in dynamic STM mode, a frequency shift (Δf) map is obtained in which Δf values range from 41 to 47 Hz (repulsive interaction). As a result, we deduced that the STM tip, also, provokes local mechanical distortions of the graphene monolayer. The origin of these tip-induced distortions is discussed in terms of electronic and mechanical properties of EG on 6H-SiC(0001).

Well-defined two dimensional covalent organic polymers: rational design, controlled syntheses, and potential applications

Recent developments in the design, synthesis and application of 2D covalent organic polymers are reviewed, along with some perspectives and challenges.

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a new platform for exploring 2D semiconductor physics. Reduced screening in two dimensions results in markedly enhanced electron-electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects. Here we present a rigorous experimental observation of extraordinarily large exciton binding energy in a 2D semiconducting TMD. We determine the single-particle electronic bandgap of single-layer MoSe2 by means of scanning tunnelling spectroscopy (STS), as well as the two-particle exciton transition energy using photoluminescence (PL) spectroscopy. These yield an exciton binding energy of 0.55 eV for monolayer MoSe2 on graphene—orders of magnitude larger than what is seen in conventional 3D semiconductors and significantly higher than what we see for MoSe2 monolayers in more highly screening environments. This finding is corroborated by our ab initio GW and Bethe-Salpeter equation calculations which include electron correlation effects. The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.

Tunable band gaps in graphene/GaN van der Waals heterostructures

Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å(-1).

Atomically resolved graphitic surfaces in air by atomic force microscopy

Imaging at the atomic scale using atomic force microscopy in biocompatible environments is an ongoing challenge. We demonstrate atomic resolution of graphite and hydrogen-intercalated graphene on SiC in air. The main challenges arise from the overall surface cleanliness and the water layers which form on almost all surfaces. To further investigate the influence of the water layers, we compare data taken with a hydrophilic bulk-silicon tip to a hydrophobic bulk-sapphire tip. While atomic resolution can be achieved with both tip materials at moderate interaction forces, there are strong differences in force versus distance spectra which relate to the water layers on the tips and samples. Imaging at very low tip-sample interaction forces results in the observation of large terraces of a naturally occurring stripe structure on the hydrogen-intercalated graphene. This structure has been previously reported on graphitic surfaces that are not covered with disordered adsorbates in ambient conditions (i.e., on graphite and bilayer graphene on SiC, but not on monolayer graphene on SiC). Both these observations indicate that hydrogen-intercalated graphene is close to an ideal graphene sample in ambient environments.

Rotated domain network in graphene on cubic-SiC(001)

The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by ±13.5° relative to the left angle bracket 110 right angle bracket-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 × 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 × 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.

Combining low-energy electron microscopy and scanning probe microscopy techniques for surface science: development of a novel sample-holder

We introduce an experimental facility dedicated to surface science that combines Low-Energy Electron Microscopy/Photo-Electron Emission Microscopy (LEEM/PEEM) and variable-temperature Scanning Probe Microscopy techniques. A technical challenge has been to design a sample-holder that allows to exploit the complementary specifications of both microscopes and to preserve their optimal functionality. Experimental demonstration is reported by characterizing under ultrahigh vacuum with both techniques: Au(111) surface reconstruction and a two-layer thick graphene on 6H-SiC(0001). A set of macros to analyze LEEM/PEEM data extends the capabilities of the setup.

Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunneling microscopy using a Green's function formalism, and apply it to graphene. Sampling the local conduction properties at finite length scales yields real space conductance maps which show anisotropy for pristine graphene systems and quantum interference effects in the presence of isolated impurities. Spectral signatures in the Fourier transforms of real space conductance maps include characteristics that can be related to different scattering processes. We compute the conductance maps of graphene systems with different edge geometries or height fluctuations to determine the effects of nonideal graphene samples on dual-probe measurements.

Observation of 4 nm pitch stripe domains formed by exposing graphene to ambient air

We study epitaxial graphene on the 6H-SiC(0001) surface under ambient conditions using frequency-modulation atomic force microscopy. We observe large terraces with a self-assembled stripe structure within a highly adsorbate covered surface on top of the graphene. To identify the origin of the structure, we compare the experimental data on graphene with calculations and experiments on graphite that predict the formation of a solid-gas monolayer in the solid-liquid interface of hydrophobic surfaces.

Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry

Under mesoscopic conditions, the transport potential on a thin film carrying a current is theoretically expected to bear spatial variation due to quantum interference. Scanning tunneling potentiometry is the ideal tool to investigate such variation, by virtue of its high spatial resolution. We report in this Letter the first detailed measurement of transport potential under mesoscopic conditions. Epitaxial graphene at a temperature of 17 K was chosen as the initial system for study because the characteristic transport length scales in this material are relatively large. Tip jumping artifacts are a major possible contribution to systematic errors; and we mitigate such problems by using custom-made slender and sharp tips manufactured by focused ion beam. In our data, we observe residual resistivity dipoles associated with topographical defects, and local peaks and dips in the potential that are not associated with topographical defects.

Engineering electronic properties of graphene by coupling with Si-rich, two-dimensional islands

Recent theoretical and experimental studies demonstrated that breaking of the sublattice symmetry in graphene produces an energy gap at the former Dirac point. We describe the synthesis of graphene sheets decorated with ultrathin, Si-rich two-dimensional (2D) islands (i.e., Gr:Si sheets), in which the electronic property of graphene is modulated by coupling with the Si-islands. Analyses based on transmission electron microscopy, atomic force microscopy, and electron and optical spectroscopies confirmed that Si-islands with thicknesses of ~2 to 4 nm and a lateral size of several tens of nm were bonded to graphene via van der Waals interactions. Field-effect transistors (FETs) based on Gr:Si sheets exhibited enhanced transconductance and maximum-to-minimum current level compared to bare-graphene FETs, and their magnitudes gradually increased with increasing coverage of Si layers on the graphene. The temperature dependent current-voltage measurements of the Gr:Si sheet showed approximately a 2-fold increase in the resistance by decreasing the temperature from 250 to 10 K, which confirmed the opening of the substantial bandgap (~2.5-3.2 meV) in graphene by coupling with Si islands.

Low energy electron microscopy and photoemission electron microscopy investigation of graphene

Low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) are two powerful techniques for the investigation of surfaces, thin films and surface supported nanostructures. In this review, we examine the contributions of these microscopy techniques to our understanding of graphene in recent years. These contributions have been made in studies of graphene on various metal and SiC surfaces and free-standing graphene. We discuss how the real-time imaging capability of LEEM facilitates a deeper understanding of the mechanisms of dynamic processes, such as growth and intercalation. Numerous examples also demonstrate how imaging and the various available complementary measurement capabilities, such as selected area or micro low energy electron diffraction (μLEED) and micro angle resolved photoelectron spectroscopy (μARPES), allow the investigation of local properties in spatially inhomogeneous graphene samples.

Large-area and high-quality epitaxial graphene on off-axis SiC wafers

The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.

Scanning tunnelling microscopy of suspended graphene

Suspended graphene has been studied by STM for the first time. Atomic resolution on mono- and bi-layer graphene samples has been obtained after ridding the graphene surface of contamination via high-temperature annealing. Static local corrugations (ripples) have been observed on both types of structures.