High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Multifunctional Magnetic Oxide-MoS2 Heterostructures on Silicon

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La0.7 Sr0.3 MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS2 heterostructures. The LSMO-MoS2 heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS2 heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS2 heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.

Tunable Schottky and ohmic contacts in the Ti2NF2/α-Te van der Waals heterostructure

Two dimensional α-Te holds great promise in optoelectronic devices because of its high mobility and excellent environmental stability. In this study, the electronic structures and interfacial contact characteristics of the Ti₂NF₂/α-Te van der Waals heterostructure are investigated by means of first-principles calculations. It is found that p-type Schottky contacts with a Schottky barrier (SB) of 0.21 eV are formed at the Ti₂NF₂/α-Te interface. By applying external electric fields or controlling the interlayer coupling between the Ti₂NF₂ and α-Te monolayers, the SB height can be effectively tuned, and all the n-type Schottky, p-type Schottky, n-type ohmic and p-type ohmic contacts can be achieved. Such an extremely high tunability is further found to be closely associated with the charge transfer at the interface, as well as the interface dipole and the potential step. Our results provide an avenue for the design of future α-Te-based electronic devices with high performance.

Thin-Film Ferroelectrics

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.

Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga³⁺/Pr³⁺ co-doped BaTiO₃ ultra-thin film epitaxially grown on a [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O^2- at the O2p orbital in the valence band and Pr³⁺ with injected holes by the ferroelectric gating effect promotes the formation of excited state O^-, Pr⁴⁺, or Pr^3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor

In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.

Photophysics of nanographenes: from polycyclic aromatic hydrocarbons to graphene nanoribbons

Graphene quantum dots (GQDs) and nanoribbons (GNRs) are classes of nanographene molecules that exhibit highly tunable photophysical properties. There have been great strides in recent years to advance our understanding of nanographene photophysics and develop their use in light-harvesting systems, such as artificial photosynthesis. Here, we review the latest studies of GQDs and GNRs which have shed new light onto their photophysical underpinnings through computational and advanced spectroscopic techniques. We discuss how the size, symmetry, and shape of nanographenes influence their molecular orbital structures and, consequentially, their spectroscopic signatures. The scope of this review is to comprehensively lay out the general photophysics of nanographenes starting with benzene and building up to larger polycyclic aromatic hydrocarbons, GQDs, and GNRs. We also explore a collection of publications from recent years that build upon the current understanding of nanographene photophysics and their potential application in light-driven processes from display, lasing, and sensing technology to photocatalytic water splitting.

Anisotropic Ion Migration and Electronic Conduction in van der Waals Ferroelectric CuInP2S6

Van der Waals (vdW) thio- and seleno-phosphates have recently gained considerable attention for the use as "active" dielectrics in two-dimensional/quasi-two-dimensional electronic devices. Bulk ionic conductivity in these materials has been identified as a key factor for the control of their electronic properties. However, direct evidence of specific ion species' migration at the nanoscale, particularly under electric fields, and its impact on material properties has been elusive. Here, we report on direct evidence of a phase-selective anisotropic Cu-ion-hopping mechanism in copper indium thiophosphate (CuInP₂S₆) through detailed scanning probe microscopy measurements. A two-step Cu-hopping path including a first intralayer hopping (in-plane) and second interlayer hopping (out-of-plane) crossing the vdW gap is unveiled. Evidence of electrically controlled Cu ion migration is further verified by nanoscale energy-dispersive X-ray spectroscopy (EDS) mapping. These findings offer new insight into anisotropic ionic manipulation in layered vdW ferroelectric/dielectric materials for emergent vdW electronic device design.

Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity

Graphdiyne (GDY), a newly emerging 2D carbon allotrope, has been widely explored in various fields owing to its outstanding electronic properties such as the intrinsic bandgap and high carrier mobility. Herein, GDY-based photoelectrochemical-type photodetection is realized by spin-coating ultrathin GDY nanosheets onto flexible poly(ethylene terephthalate) (PET) substrates. The GDY-based photodetectors (PDs) demonstrate excellent photo-responsive behaviors with high photocurrent (P_ph , 5.98 µA cm^{- 2} ), photoresponsivity (R_ph , 1086.96 µA W^{- 1} ), detectivity (7.31 × 10¹⁰ Jones), and excellent long-term stability (more than 1 month). More importantly, the PDs maintain an excellent P_ph after 1000 cycles of bending (4.45 µA cm^{- 2} ) and twisting (3.85 µA cm^{- 2} ), thanks to the great flexibility of the GDY structure that is compatible with the flexible PET substrate. Density functional theory (DFT) calculations are adopted to explore the electronic characteristics of GDY, which provides evidence for the performance enhancement of GDY in alkaline electrolyte. In this way, the GDY-based flexible PDs can enrich the fundamental study of GDY and pave the way for the exploration of GDY heterojunction-based photodetection.

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.

Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

The marriage between a 2D layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that cannot be achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO₃ , graphene/LaAlO₃ /SrTiO₃ , graphene/ferroelectric oxide, MoS₂ /SrTiO₃ , and FeSe/SrTiO₃ heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this context, various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems are reviewed. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically as each constituent material is a promising candidate for next-generation optoelectronic devices.

Nanodomain Engineering for Programmable Ferroelectric Devices

We introduce a concept of programmable ferroelectric devices composed of two-dimensional (2D) and ferroelectric (FE) materials. It enables precise modulation of the in-plane conductivity of a 2D channel material through nanoengineering FE domains with out-of-plane polarization. The functionality of these new devices has been demonstrated using field-effect transistors (FETs) fabricated with monolayer molybdenum disulfide (MoS₂) channels on the Pb(Zr,Ti)O₃ substrates. Using piezoresponse force microscopy (PFM), we show that local switching of FE polarization by a conductive probe can be used to tune the conductivity of the MoS₂ channel. Specifically, patterning of the nanoscale domains with downward polarization creates conductive paths in a resistive MoS₂ channel so that the conductivity of an FET is determined by the number and length of the paths connecting source and drain electrodes. In addition to the device programmability, we demonstrate the device ON/OFF cyclic endurance by successive writing and erasing of conductive paths in a MoS₂ channel. These findings may inspire the development of advanced energy-efficient programmable synaptic devices based on a combination of 2D and FE materials.

Graphene bandgap induced by ferroelectric Pca21 HfO2 substrates: a first-principles study

The electronic properties of graphene on top of ferroelectric HfO₂ substrates in an orthorhombic phase with space group Pca2₁ are investigated using density functional theory calculations.

Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors

We have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the capacitors containing graphene are 3-4 times larger than the ferroelectric capacitors without graphene, and increase even more after annealing. This physical effect can be attributed to the additional electric field exerted by the graphene monolayer on the HfZrO ferroelectric semiconductor capacitor, and to the negative thermal extension coefficient of graphene, respectively.

Layer-by-layer hybrid chemical doping for high transmittance uniformity in graphene-polymer flexible transparent conductive nanocomposite

A traditional transparent conducting film (TCF) such as indium tin oxide (ITO) exhibits poor mechanical flexibility and inconsistent transmittance throughout the UV-VIS-NIR spectrum. Recent TCFs like graphene films exhibit high sheet resistance (R_s) due to defect induced carrier scattering. Here we show a unique hybrid chemical doping method that results in high transmittance uniformity in a layered graphene-polymer nanocomposite with suppressed defect-induced carrier scattering. This layer-by-layer hybrid chemical doping results in low R_s (15 Ω/sq at >90% transmittance) and 3.6% transmittance uniformity (300–1000 nm) compared with graphene (17%), polymer (8%) and ITO (46%) films. The weak localization effect in our nanocomposite was reduced to 0.5%, compared with pristine (4.25%) and doped graphene films (1.2%). Furthermore, negligible R_s change (1.2 times compared to 12.6 × 10³ times in ITO) and nearly unaltered transmittance spectra were observed up to 24 GPa of applied stress highlighting mechanical flexibility of the nanocomposite film.

Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices

Piezoelectric and ferroelectric materials have shown great potential for control of the optical process in emerging materials. There are three ways for them to impact on the optical process in various materials. They can act as external perturbations, such as ferroelectric gating and piezoelectric strain, to tune the optical properties of the materials and devices. Second, ferroelectricity and piezoelectricity as innate attributes may exist in some optoelectronic materials, which can couple with other functional features (e.g., semiconductor transport, photoexcitation, and photovoltaics) in the materials giving rise to unprecedented device characteristics. The last way is artificially introducing optical functionalities into ferroelectric and piezoelectric materials and devices, which provides an opportunity for investigating the intriguing interplay between the parameters (e.g., electric field, temperature, and strain) and the introduced optical properties. Here, the tuning strategies, fundamental mechanisms, and recent progress in ferroelectric and piezoelectric effects modulating the optical properties of a wide spectrum of materials, including lanthanide-doped phosphors, quantum dots, 2D materials, wurtzite-type semiconductors, and hybrid perovskites, are presented. Finally, the future outlook and challenges of this exciting field are suggested.

Enhanced Piezoelectric Response in Hybrid Lead Halide Perovskite Thin Films via Interfacing with Ferroelectric PbZr0.2Ti0.8O3

We report a more than 10-fold enhancement of the piezoelectric coefficient d₃₃ of polycrystalline CH₃NH₃PbI₃ (MAPbI₃) films when interfacing them with ferroelectric PbZr_0.2Ti_0.8O₃ (PZT). Piezoresponse force microscopy (PFM) studies reveal [Formula: see text] values of 0.3-0.4 pm/V for MAPbI₃ deposited on Au, indium tin oxide, and SrTiO₃ surfaces, with small phase angle fluctuating at length scales smaller than the grain size. In sharp contrast, on samples prepared on epitaxial PZT films, we observe large-scale polar domains exhibiting clear, close to 180° PFM phase contrasts, pointing to polar axes along the film normal. By separating the piezoresponse contributions from the MAPbI₃ and PZT layers, we extract a significantly higher [Formula: see text] of ∼4 pm/V, which is attributed to the enhanced alignment of the MA molecular dipoles promoted by the unbalanced surface potential of PZT. We also discuss the effect of the interfacial screening layer on the preferred polar direction.

Time-dependent transport characteristics of graphene tuned by ferroelectric polarization and interface charge trapping

Graphene-based field effect transistors (FETs) were fabricated by employing ferroelectric Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) as a gate insulator. The co-existing effects of ferroelectric gating and interface charge trapping on the transport properties of graphene were investigated with respect to the FET structure. The sheet resistance (R_s) of graphene shows a slight decay under a small applied voltage, which is much less than the coercive voltage of the ferroelectric PMN-PT, suggesting non-negligible charge trapping effects. Moreover, when the applied voltage is increased up to a value larger than the coercive voltage, R_s exhibits three states: an initial rapid change, followed by a slow nearly exponential evolution, and finally a saturated state either during the applied voltage is retained or after it is released. In particular, a high-resistance state is finally reached due to the ferroelectric gating, implying that ferroelectric effects dominate this process. The underlying physical mechanism was fully investigated to effectively address the observed evolution of time-dependent R_s. Such a finding provides us an opportunity to understand the co-existing effects of ferroelectric gating and charge trapping and tune the transport properties of graphene through the interface effects.

Charge doping in graphene on thermodynamically preferred BiFeO3(0001) polar surfaces

For graphene/ferroelectric hybrid structures, the atomistic and electronic details of the interfaces are of crucial importance for charge doping in graphene. In this paper, we choose thermodynamically stable BiFeO₃(0001) surfaces to explore the adsorption behavior and charge doping effect in a graphene/BiFeO₃ system. By performing first-principles calculations, we find that both the adsorption behavior and charge doping effect show distinct characteristics for graphene adsorbed on the oppositely polarized BiFeO₃(0001) surfaces. We predict that n-type doping and p-type charge doping occur in graphene on the positive and negative BiFeO₃(0001) surfaces, respectively. The carrier density is estimated to be 10¹³ cm^-2 orders of magnitude. Our results reveal that the graphene/BiFeO₃ hybrid system is an intriguing candidate to make graphene-based field-effect transistors, whose p-n junctions can be made by patterning the domain structure of the BiFeO₃ substrate. Moreover, the graphene/BFO hybrid structure may display an outstanding photovoltaic effect due to the combination of the bulk photovoltaic effect of the BFO substrate and the optical transparency of the graphene electrode.

Atomistic simulations of graphite etching at realistic time scales

Hydrogen-graphite interactions are relevant to a wide variety of applications, ranging from astrophysics to fusion devices and nano-electronics. In order to shed light on these interactions, atomistic simulation using Molecular Dynamics (MD) has been shown to be an invaluable tool. It suffers, however, from severe time-scale limitations. In this work we apply the recently developed Collective Variable-Driven Hyperdynamics (CVHD) method to hydrogen etching of graphite for varying inter-impact times up to a realistic value of 1 ms, which corresponds to a flux of ∼1020 m-2 s-1. The results show that the erosion yield, hydrogen surface coverage and species distribution are significantly affected by the time between impacts. This can be explained by the higher probability of C-C bond breaking due to the prolonged exposure to thermal stress and the subsequent transition from ion- to thermal-induced etching. This latter regime of thermal-induced etching - chemical erosion - is here accessed for the first time using atomistic simulations. In conclusion, this study demonstrates that accounting for long time-scales significantly affects ion bombardment simulations and should not be neglected in a wide range of conditions, in contrast to what is typically assumed.

Metal Thio- and Selenophosphates as Multifunctional van der Waals Layered Materials

Since the discovery of Dirac physics in graphene, research in 2D materials has exploded with the aim of finding new materials and harnessing their unique and tunable electronic and optical properties. The follow-on work on 2D dielectrics and semiconductors has led to the emergence and development of hexagonal boron nitride, black phosphorus, and transition metal disulfides. However, the spectrum of good insulating materials is still very narrow. Likewise, 2D materials exhibiting correlated phenomena such as superconductivity, magnetism, and ferroelectricity have yet to be developed or discovered. These properties will significantly enrich the spectrum of functional 2D materials, particularly in the case of high phase-transition temperatures. They will also advance a fascinating fundamental frontier of size and proximity effects on correlated ground states. Here, a broad family of layered metal thio(seleno)phosphate materials that are moderate- to wide-bandgap semiconductors with incipient ionic conductivity and a host of ferroic properties are reviewed. It is argued that this material class has the potential to merge the sought-after properties of complex oxides with electronic functions of 2D and quasi-2D electronic materials, as well as to create new avenues for both applied and fundamental materials research in structural and magnetic correlations.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future.

Room-Temperature Quantum Transport Signatures in Graphene/LaAlO3 /SrTiO3 Heterostructures

High mobility graphene field-effect devices, fabricated on the complex-oxide heterostructure LaAlO₃ /SrTiO₃ , exhibit quantum interference signatures up to room temperature. The oxide material is believed to play a critical role in suppressing short-range and phonon contributions to scattering. The ability to maintain pseudospin coherence at room temperature holds promise for the realization of new classical and quantum information technologies.

Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3 Tunnel Junctions

Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO₃ ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS₂) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS₂ results in a giant tunneling electroresistance effect in the hybrid MoS₂-BaTiO₃-SrRuO₃ ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10⁴, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS₂ electrode in response to ferroelectric switching, which alters the barrier at the MoS₂-BaTiO₃ interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO₃ adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.

Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

There is a growing number of applications demanding highly sensitive photodetectors in the mid-infrared. Thermal photodetectors, such as bolometers, have emerged as the technology of choice, because they do not need cooling. The performance of a bolometer is linked to its temperature coefficient of resistance (TCR, ∼2–4% K⁻¹ for state-of-the-art materials). Graphene is ideally suited for optoelectronic applications, with a variety of reported photodetectors ranging from visible to THz frequencies. For the mid-infrared, graphene-based detectors with TCRs ∼4–11% K⁻¹ have been demonstrated. Here we present an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO₃ crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. This is achieved by fabricating a floating metallic structure that concentrates the pyroelectric charge on the top-gate capacitor of the graphene channel, leading to TCRs up to 900% K⁻¹, and the ability to resolve temperature variations down to 15 μK.

There is emerging interest in photodetectors in the mid-infrared driven by increasing need to monitor the environment for security and healthcare purposes. Sassi et al. show a thermal photodetector, based on the coupling between graphene and a pyroelectric crystal, which shows high temperature sensitivity.

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices.

Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

High-quality InSb nanocrystals: synthesis and application in graphene-based near-infrared photodetectors

InSb nanocrystals are synthesized by CVD method. A high photoresponsivity at 1550 nm is achieved in InSb/graphene hybrid structure.

Non-interacting, sp2 carbon on a ferroelectric lead zirco-titanate: towards graphene synthesis on ferroelectrics in ultrahigh vacuum

Carbon layers grown on lead zirco-titanate (PZT) weakly interact with the substrate and exhibit nearly two dimensional character, up to a carbon surface density approaching that of graphene.

Antisite defects in layered multiferroic CuCr(0.9)In(0.1)P2S6

The CuCr1-xInxP2S6 system represents a large family of metal chalcogenophosphates that are unique and promising candidates for 2D materials with functionalities such as ferroelectricity. In this work, we carried out detailed microstructural and chemical characterization of these compounds using aberration-corrected STEM, in order to understand the origin of these different ordering phenomena. Quantitative STEM-HAADF imaging and analysis identified the stacking order of an 8-layer thin flake, which leads to the identification of anti-site In(3+)(Cu(+)) doping. We believe that these findings will pave the way towards understanding the ferroic coupling phenomena in van der Waals lamellar compounds, as well as their potential applications in 2-D electronics.

Role of different scattering mechanisms on the temperature dependence of transport in graphene

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

Optoelectrical Molybdenum Disulfide (MoS2)--Ferroelectric Memories

In this study, we fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS2) on a lead zirconium titanate (Pb(Zr,Ti)O3, PZT) substrate that was used as a gate dielectric. MoS2-PZT FETs exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that the interplay of polarization and interfacial phenomena strongly affects the electronic behavior and memory characteristics of MoS2-PZT FETs. We further demonstrate that MoS2-PZT memories have a number of advantages and unique features compared to their graphene-based counterparts as well as commercial ferroelectric random-access memories (FeRAMs), such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically. This dual optoelectrical operation of these memories can simplify the device architecture and offer additional practical functionalities, such as an instant optical erase of large data arrays that is unavailable for many conventional memories.

Tuning and Persistent Switching of Graphene Plasmons on a Ferroelectric Substrate

We characterized plasmon propagation in graphene on thin films of the high-κ dielectric PbZr0.3Ti0.7O3 (PZT). Significant modulation (up to ±75%) of the plasmon wavelength was achieved with application of ultrasmall voltages (< ±1 V) across PZT. Analysis of the observed plasmonic fringes at the graphene edge indicates that carriers in graphene on PZT behave as noninteracting Dirac Fermions approximated by a semiclassical Drude response, which may be attributed to strong dielectric screening at the graphene/PZT interface. Additionally, significant plasmon scattering occurs at the grain boundaries of PZT from topographic and/or polarization induced graphene conductivity variation in the interior of graphene, reducing the overall plasmon propagation length. Lastly, through application of 2 V across PZT, we demonstrate the capability to persistently modify the plasmonic response of graphene through transient voltage application.

CuInP₂S₆ Room Temperature Layered Ferroelectric

We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

Toward Ferroelectric Control of Monolayer MoS2

The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.

Scaling of graphene integrated circuits

The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 μm gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.

Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition

Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements.

Ferroelectric tunnel junctions with graphene electrodes

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary conditions, which can be controlled by electrode material and/or interface engineering. Here, we demonstrate the use of graphene as electrodes in FTJs that allows control of interface properties for significant enhancement of device performance. Ferroelectric polarization stability and resistive switching are strongly affected by a molecular layer at the graphene/BaTiO3 interface. For the FTJ with the interfacial ammonia layer we find an enhanced tunnelling electroresistance (TER) effect of 6 × 10(5)%. The obtained results demonstrate a new approach based on using graphene electrodes for interface-facilitated polarization stability and enhancement of the TER effect, which can be exploited in the FTJ-based devices.

Interface engineering for CVD graphene: current status and progress

In the past decade, graphene and graphene-like 2D materials have drawn more and more attention in both academia and industry due to their fascinating properties. As an atomically thin 2D layered material, graphene has extremely high environmental susceptibility, that is, its properties are strongly affected by its surroundings. In this review, the current status and progress in graphene interface engineering are systematically discussed, including the interface between graphene (carbon sources) and an underlying growth substrate (catalyst), the interface between graphene and a supporting layer during a transfer process, as well as the interface between graphene and a modified substrate from the viewpoint of device applications. These key techniques involved in graphene synthesis, transfer, and device substrates can be further applied to other related 2D layered materials such as MoS2 . Moreover, by combining 2D crystals in one particular stack, 2D-based heterostructures with desired functionalities can be achieved, which opens up a new avenue for the future applications of 2D layered materials.

Extrinsic and intrinsic charge trapping at the graphene/ferroelectric interface

The interface between graphene and the ferroelectric superlattice PbTiO3/SrTiO3 (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adorbates at the graphene/ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. "Intrinsic" charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

In this article, we present the simulation, fabrication, and characterization of a novel bilayer graphene field-effect transistor exhibiting electron mobility up to ~1600 cm(2) V(-1) s(-1), a room temperature I on/I off ≈ 60, and the lowest total charge (~10(11) cm(-2)) reported to date. This is achieved by combined electrostatic and chemical doping of bilayer graphene, which enables one to switch off the device at zero top-gate voltage. Using density functional theory and atomistic simulations, we obtain physical insight into the impact of chemical and electrostatic doping on bandgap opening of bilayer graphene and the effect of metal contacts on the operation of the device. Our results represent a step forward in the use of bilayer graphene for high-performance logic devices in the beyond-complementary metal-oxide-semiconductor (CMOS) technology paradigm.

Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.