1
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Butko AV, Butko VY, Kumzerov YA. Dirac Electrons with Molecular Relaxation Time at Electrochemical Interface between Graphene and Water. Int J Mol Sci 2024; 25:10083. [PMID: 39337568 PMCID: PMC11432520 DOI: 10.3390/ijms251810083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2024] [Revised: 09/12/2024] [Accepted: 09/17/2024] [Indexed: 09/30/2024] Open
Abstract
The time dynamics of charge accumulation at the electrochemical interface between graphene and water is important for supercapacitors, batteries, and chemical and biological sensors. By using impedance spectroscopy, we have found that measured capacitance (Cm) at this interface with the gate voltage Vgate ≈ 0.1 V follows approximate laws Cm~T1.2 and Cm~T0.11 (T is Vgate period) in frequency ranges (1000-50,000) Hz and (0.02-300) Hz, respectively. In the first range, this dependence demonstrates that the interfacial capacitance (Cint) is only partially charged during the charging period. The observed weaker frequency dependence of the measured capacitance (Cm) at frequencies below 300 Hz is primarily determined by the molecular relaxation of the double-layer capacitance (Cdl) and by the graphene quantum capacitance (Cq), and it also implies that Cint is mostly charged. We have also found a voltage dependence of Cm below 10 Hz, which is likely related to the voltage dependence of Cq. The observation of this effect only at low frequencies indicates that Cq relaxation time is much longer than is typical for electron processes, probably due to Dirac cone reconstruction from graphene electrons with increased effective mass as a result of their quasichemical bonding with interfacial molecular charges.
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Affiliation(s)
- Alexey V Butko
- Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
| | - Vladimir Y Butko
- Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
| | - Yurii A Kumzerov
- Ioffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia
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2
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Tilak N, Altvater M, Hung SH, Won CJ, Li G, Kaleem T, Cheong SW, Chung CH, Jeng HT, Andrei EY. Proximity induced charge density wave in a graphene/1T-TaS 2 heterostructure. Nat Commun 2024; 15:8056. [PMID: 39277602 PMCID: PMC11401908 DOI: 10.1038/s41467-024-51608-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Accepted: 08/07/2024] [Indexed: 09/17/2024] Open
Abstract
The proximity-effect, whereby materials in contact appropriate each other's electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott-gap in 1T-TaS2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.
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Affiliation(s)
- Nikhil Tilak
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA
| | - Michael Altvater
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA
| | - Sheng-Hsiung Hung
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
| | - Choong-Jae Won
- Laboratory for Pohang Emergent Materials and Max Plank POSTECH Center for Complex Phase Materials, Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA
| | - Taha Kaleem
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA
| | - Chung-Hou Chung
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
- Physics Division, National Center for Theoretical Sciences, Taipei, Taiwan.
- Center for Theoretical and Computational Physics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
| | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan.
- Physics Division, National Center for Theoretical Sciences, Taipei, Taiwan.
- Institute of Physics, Academia Sinica, Taipei, Taiwan.
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey, USA.
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3
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Coe AM, Li G, Andrei EY. Cryogen-free modular scanning tunneling microscope operating at 4-K in high magnetic field on a compact ultra-high vacuum platform. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:083702. [PMID: 39105599 DOI: 10.1063/5.0212244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Accepted: 07/14/2024] [Indexed: 08/07/2024]
Abstract
One of the daunting challenges in modern low temperature scanning tunneling microscopy (STM) is the difficulty of combining atomic resolution with cryogen-free cooling. Further functionality needs, such as ultra-high vacuum (UHV), high magnetic field (HF), and compatibility with μm-sized samples, pose additional challenges to an already ambitious build. We present the design, construction, and performance of a cryogen-free, UHV, low temperature, and high magnetic field system for modular STM operation. An internal vibration isolator reduces vibrations in this system, allowing for atomic resolution STM imaging while maintaining a low base temperature of ∼4 K and magnetic fields up to 9 T. Samples and tips can be conditioned in situ utilizing a heating stage, an ion sputtering gun, an e-beam evaporator, a tip treater, and sample exfoliation. In situ sample and tip exchange and alignment are performed in a connected UHV room temperature stage with optical access. Multisite operation without breaking vacuum is enabled by a unique quick-connect STM head design. A novel low-profile vertical transfer mechanism permits transferring the STM between room temperature and the low temperature cryostat.
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Affiliation(s)
- Angela M Coe
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854, USA
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4
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Coe AM, Li G, Andrei EY. Quick-connect scanning tunneling microscope head with nested piezoelectric coarse walkers. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2024; 95:073703. [PMID: 38958515 DOI: 10.1063/5.0204940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Accepted: 05/20/2024] [Indexed: 07/04/2024]
Abstract
To meet changing research demands, new scanning tunneling microscope (STM) features must constantly evolve. We describe the design, development, and performance of a modular plug-in STM, which is compact and stable. The STM head is equipped with a quick-connect socket that is matched to a universal connector plug, enabling it to be transferred between systems. This head can be introduced into a vacuum system via a load-lock and transferred to various sites equipped with the connector plug, permitting multi-site STM operation. Its design allows for reliable operation in a variety of experimental conditions, including a broad temperature range, ultra-high vacuum, high magnetic fields, and closed-cycle pulse-tube cooling. The STM's compact size is achieved by a novel nested piezoelectric coarse walker design, which allows for large orthogonal travel in the X, Y, and Z directions, ideal for studying both bulk and thin film samples ranging in size from mm to μm. Its stability and noise tolerance are demonstrated by achieving atomic resolution under ambient conditions on a laboratory desktop with no vibrational or acoustic isolation. The operation of the nested coarse walkers is demonstrated by successful navigation to a μm-sized 2D sample.
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Affiliation(s)
- Angela M Coe
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, USA
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5
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Wu Y, Li Y, Zhang X. The Future of Graphene: Preparation from Biomass Waste and Sports Applications. Molecules 2024; 29:1825. [PMID: 38675644 PMCID: PMC11053808 DOI: 10.3390/molecules29081825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 04/11/2024] [Accepted: 04/15/2024] [Indexed: 04/28/2024] Open
Abstract
At present, the main raw material for producing graphene is graphite ore. However, researchers actively seek alternative resources due to their high cost and environmental problems. Biomass waste has attracted much attention due to its carbon-rich structure and renewability, emerging as a potential raw material for graphene production to be used in sports equipment. However, further progress is required on the quality of graphene produced from waste biomass. This paper, therefore, summarizes the properties, structures, and production processes of graphene and its derivatives, as well as the inherent advantages of biomass waste-derived graphene. Finally, this paper reviews graphene's importance and application prospects in sports since this wonder material has made sports equipment available with high-strength and lightweight quality. Moreover, its outstanding thermal and electrical conductivity is exploited to prepare wearable sensors to collect more accurate sports data, thus helping to improve athletes' training levels and competitive performance. Although the large-scale production of biomass waste-derived graphene has yet to be realized, it is expected that its application will expand to various other fields due to the associated low cost and environmental friendliness of the preparation technique.
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Affiliation(s)
- Yueting Wu
- Graduate School, Harbin Sport University, Harbin 150008, China; (Y.W.)
| | - Yanlong Li
- Academic Theory Research Department, Harbin Sport University, Harbin 150008, China
| | - Xiangyang Zhang
- Graduate School, Harbin Sport University, Harbin 150008, China; (Y.W.)
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6
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Guo H, Jiménez-Sánchez MD, Michel EG, Martínez-Galera AJ, Gómez-Rodríguez JM. Aperiodic Modulation of Graphene Driven by Oxygen-Induced Reconstruction of Rh(110). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:17930-17938. [PMID: 37744964 PMCID: PMC10513088 DOI: 10.1021/acs.jpcc.3c02643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 08/04/2023] [Indexed: 09/26/2023]
Abstract
Artificial nanostructuring of graphene has served as a platform to induce variations in its structural and electronic properties, fostering the experimental observation of a wide and fascinating phenomenology. Here, we present an approach to graphene tuning, based on Rh(110) surface reconstruction induced by oxygen atoms intercalation. The resulting nanostructured graphene has been characterized by scanning tunneling microscopy (STM) complemented by low-energy electron microscopy (LEEM), micro low-energy electron diffraction (μ-LEED), micro angle-resolved photoemission spectroscopy (μ-ARPES), and micro X-ray photoelectron spectroscopy (μ-XPS) measurements under ultrahigh vacuum (UHV) conditions at room temperature (RT). It is found that by fine-tuning the O2 exposure amount, a mixture of missing row surface reconstructions of the metal surface below the graphene layer can be induced. This atomic rearrangement under the graphene layer results in aperiodic patterning of the two-dimensional (2D) material. The electronic structure of the resulting nanostructured graphene is dominated by a linear dispersion of the Dirac quasiparticles, characteristic of its free-standing state but with a p-doping character. The local effects of the underlying missing rows on the interfacial chemistry and on the quasiparticle scattering processes in graphene are studied using atomically resolved STM images. The possibilities offered by this nanostructuring approach, which consists in inducing surface reconstructions under graphene, could provide a novel tuning strategy for this 2D material.
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Affiliation(s)
- Haojie Guo
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | | | - Enrique G. Michel
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - Antonio J. Martínez-Galera
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, E-28049 Madrid, Spain
- Departamento
de Física de Materiales, Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - José M. Gómez-Rodríguez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Instituto
Nicolás Cabrera, Universidad Autónoma
de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
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7
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Dale N, Utama MIB, Lee D, Leconte N, Zhao S, Lee K, Taniguchi T, Watanabe K, Jozwiak C, Bostwick A, Rotenberg E, Koch RJ, Jung J, Wang F, Lanzara A. Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices. NANO LETTERS 2023; 23:6799-6806. [PMID: 37486984 PMCID: PMC10424631 DOI: 10.1021/acs.nanolett.3c00253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2023] [Revised: 05/25/2023] [Indexed: 07/26/2023]
Abstract
Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.
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Affiliation(s)
- Nicholas Dale
- Department
of Physics, University of California, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - M. Iqbal Bakti Utama
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Department
of Materials Science and Engineering, University
of California at Berkeley, Berkeley, California 94720, United States
| | - Dongkyu Lee
- Department
of Physics, University of Seoul, Seoul, 02504, Korea
- Department
of Smart Cities, University of Seoul, Seoul, 02504, Korea
| | - Nicolas Leconte
- Department
of Physics, University of Seoul, Seoul, 02504, Korea
| | - Sihan Zhao
- Interdisciplinary
Center for Quantum Information, Zhejiang Province Key Laboratory of
Quantum Technology and Device, State Key Laboratory of Silicon Materials,
and School of Physics, Zhejiang University, Hangzhou 310027, China
| | - Kyunghoon Lee
- Department
of Physics, University of California, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Chris Jozwiak
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Aaron Bostwick
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Roland J. Koch
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Jeil Jung
- Department
of Physics, University of Seoul, Seoul, 02504, Korea
- Department
of Smart Cities, University of Seoul, Seoul, 02504, Korea
| | - Feng Wang
- Department
of Physics, University of California, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience
Institute at University of California Berkeley
and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alessandra Lanzara
- Department
of Physics, University of California, Berkeley, California 94720, United States
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoScience
Institute at University of California Berkeley
and Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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8
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Choudhary K, Gurunathan R, DeCost B, Biacchi A. AtomVision: A Machine Vision Library for Atomistic Images. J Chem Inf Model 2023; 63:1708-1722. [PMID: 36857727 DOI: 10.1021/acs.jcim.2c01533] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2023]
Abstract
Computer vision techniques have immense potential for materials design applications. In this work, we introduce an integrated and general-purpose AtomVision library that can be used to generate and curate microscopy image (such as scanning tunneling microscopy and scanning transmission electron microscopy) data sets and apply a variety of machine learning techniques. To demonstrate the applicability of this library, we (1) establish an atomistic image data set of about 10 000 materials with large structural and chemical diversity, (2) develop and compare convolutional and atomistic line graph neural network models to classify the Bravais lattices, (3) demonstrate the application of fully convolutional neural networks using U-Net architecture to pixelwise classify atom versus background, (4) use a generative adversarial network for super resolution, (5) curate an image data set on the basis of natural language processing using an open-access arXiv data set, and (6) integrate the computational framework with experimental microscopy images for Rh, Fe3O4, and SnS systems. The AtomVision library is available at https://github.com/usnistgov/atomvision.
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Affiliation(s)
- Kamal Choudhary
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Ramya Gurunathan
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Brian DeCost
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Adam Biacchi
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
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9
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Kolmer M, Ko W, Hall J, Chen S, Zhang J, Zhao H, Ke L, Wang CZ, Li AP, Tringides MC. Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields. J Phys Chem Lett 2022; 13:11571-11580. [PMID: 36475696 DOI: 10.1021/acs.jpclett.2c02407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. The work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.
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Affiliation(s)
- Marek Kolmer
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
| | - Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Joseph Hall
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa50011, United States
| | - Shen Chen
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa50011, United States
| | - Jianhua Zhang
- Department of Physics, Hainan University, Haikou570228, China
| | - Haijun Zhao
- School of Physics, Southeast University, Nanjing211189, China
| | - Liqin Ke
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
| | - Cai-Zhuang Wang
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa50011, United States
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Michael C Tringides
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa50011, United States
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa50011, United States
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10
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Inozemtseva AI, Sergeev AV, Napolskii KS, Kushnir SE, Belov V, Itkis DM, Usachov DY, Yashina LV. Graphene electrochemistry: ‘Adiabaticity’ of electron transfer. Electrochim Acta 2022. [DOI: 10.1016/j.electacta.2022.140901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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11
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Kumar S, Pratap S, Kumar V, Mishra RK, Gwag JS, Chakraborty B. Electronic, transport, magnetic and optical properties of graphene nanoribbons review. LUMINESCENCE 2022. [PMID: 35850156 DOI: 10.1002/bio.4334] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Revised: 06/03/2022] [Accepted: 06/14/2022] [Indexed: 11/08/2022]
Abstract
Low dimensional materials have attracted great research interest from both theoretical and experimental point of view. These materials exhibit novel physical and chemical properties due to the confinement effect in low dimensions. The experimental observations of graphene open a new platform to study the physical properties of materials restricted to two dimensions. This featured article provides a review on the novel properties of quasi one-dimensional (1D) material known as graphene nanoribbon. Graphene nanoribbons can be obtained by unzipping carbon nanotubes (CNTs) or cutting the graphene sheet. Alternatively, it is also called the finite termination of graphene edges. It gives rise different edge geometries namely zigzag and armchair among others. There are various physical and chemical techniques to realize these materials. Depending on the edge type termination, these are called the zigzag and armchair graphene nanoribbons (ZGNR and AGNR). These edges play an important role in controlling the properties of graphene nanoribbons. The present review article provides an overview of the electronic, transport, optical and magnetic properties of graphene nanoribbons. However, there are different ways to tune these properties for device applications. Here, some of them are highlighted such as external perturbations and chemical modifications. Few applications of graphene nanoribbon have and chemical modifications. Few applications of graphene nanoribbon have also been briefly discussed.
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Affiliation(s)
- Sandeep Kumar
- Department of Physics and astronomical Science, Central University of Himachal Pradesh, Kangra, H.P, India
| | - Surender Pratap
- Department of Physics and astronomical Science, Central University of Himachal Pradesh, Kangra, H.P, India
| | - Vipin Kumar
- Department of Physics, Yeungnam University, Gyeongsan, South Korea
| | | | - Jin Seog Gwag
- Department of Physics, Yeungnam University, Gyeongsan, South Korea
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12
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Cojal González JD, Iyoda M, Rabe JP. Resonant Electron Tunneling Induces Isomerization of π-Expanded Oligothiophene Macrocycles in a 2D Crystal. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200557. [PMID: 35355440 PMCID: PMC9259718 DOI: 10.1002/advs.202200557] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Revised: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Macrocyclic oligothiophenes and their π-expanded derivatives constitute versatile building blocks for the design of (supra)molecularly engineered active interfaces, owing to their structural, chemical, and optoelectronic properties. Here, it is demonstrated how resonant tunneling effect induces single molecular isomerization in a 2D crystal, self-assembled at solid-liquid interfaces under ambient conditions. Monolayers of a series of four π-expanded oligothiophene macrocycles are investigated by means of scanning tunneling microscopy and scanning tunneling spectroscopy (STS) at the interface between their octanoic acid solutions and the basal plane of highly oriented pyrolytic graphite. Current-voltage characteristics confirm the donor-type character of the macrocycles, with the highest occupied molecular orbital and the lowest unoccupied molecular orbital (LUMO) positions consistent with time-dependent density functional theory calculations. Cyclic STS measurements show the redox isomerization from Z,Z-8T6A to its isomer E,E-8T6A occurring in the 2D crystal, due to the formation of a negatively charged species when the tunneling current is in resonance with the LUMO of the macrocycle.
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Affiliation(s)
- José D. Cojal González
- Department of Physics and IRIS AdlershofHumboldt‐Universität zu BerlinNewtonstr. 15BerlinD‐12489Germany
| | - Masahiko Iyoda
- Department of ChemistryGraduate School of ScienceTokyo Metropolitan UniversityHachiojiTokyo192‐0397Japan
| | - Jürgen P. Rabe
- Department of Physics and IRIS AdlershofHumboldt‐Universität zu BerlinNewtonstr. 15BerlinD‐12489Germany
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13
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Zhang J, Jiang YP, Ma XC, Xue QK. Berry-Phase Switch in Electrostatically Confined Topological Surface States. PHYSICAL REVIEW LETTERS 2022; 128:126402. [PMID: 35394299 DOI: 10.1103/physrevlett.128.126402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2021] [Revised: 02/05/2022] [Accepted: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Here, we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the seven-quintuple-layer three dimensional (3D) topological insulator (TI) Sb_{2}Te_{3} epitaxial films. As shown by spatially dependent and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semiclassical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.
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Affiliation(s)
- Jun Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Ye-Ping Jiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Xu-Cun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Southern University of Science and Technology, Shenzhen 518055, China
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14
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Tong LH, Tong Q, Yang LZ, Zhou YY, Wu Q, Tian Y, Zhang L, Zhang L, Qin Z, Yin LJ. Spectroscopic Visualization of Flat Bands in Magic-Angle Twisted Monolayer-Bilayer Graphene: Coexistence of Localization and Delocalization. PHYSICAL REVIEW LETTERS 2022; 128:126401. [PMID: 35394312 DOI: 10.1103/physrevlett.128.126401] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Accepted: 02/25/2022] [Indexed: 06/14/2023]
Abstract
Recent transport studies have demonstrated the great potential of twisted monolayer-bilayer graphene (TMBG) as a new platform to host moiré flat bands with a higher tunability than twisted bilayer graphene (TBG). However, a direct visualization of the flat bands in TMBG and its comparison with the ones in TBG remain unexplored. Here, via fabricating on a single sample with exactly the same twist angle of ∼1.13°, we present a direct comparative study between TMBG and TBG using scanning tunneling microscopy and spectroscopy. We observe a sharp density of states peak near the Fermi energy in tunneling spectroscopy, confirming unambiguously the existence of flat electronic bands in TMBG. The bandwidth of this flat-band peak is found to be slightly narrower than that of the TBG, validating previous theoretical predictions. Remarkably, by measuring spatially resolved spectroscopy, combined with continuum model calculation, we show that the flat-band states in TMBG exhibit a unique layer-resolved localization-delocalization coexisting feature, which offers an unprecedented possibility to utilize their cooperation on exploring novel correlation phenomena. Our work provides important microscopic insight of flat-band states for better understanding the emergent physics in graphene moiré systems.
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Affiliation(s)
- Ling-Hui Tong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li-Zhen Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yue-Ying Zhou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
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15
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Smith LW, Batey JO, Alexander-Webber JA, Hsieh YC, Fung SJ, Albrow-Owen T, Beere HE, Burton OJ, Hofmann S, Ritchie DA, Kelly M, Chen TM, Joyce HJ, Smith CG. Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction. ACS NANO 2022; 16:2833-2842. [PMID: 35109656 PMCID: PMC9098165 DOI: 10.1021/acsnano.1c09815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Accepted: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.
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Affiliation(s)
- Luke W. Smith
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Jack O. Batey
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
| | - Jack A. Alexander-Webber
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Yu-Chiang Hsieh
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shin-Jr Fung
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Tom Albrow-Owen
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Harvey E. Beere
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
| | - Oliver J. Burton
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - David A. Ritchie
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
| | - Michael Kelly
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Tse-Ming Chen
- Department
of Physics, National Cheng Kung University, Tainan 701, Taiwan
- Center
for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan 701, Taiwan
| | - Hannah J. Joyce
- Electrical
Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Charles G. Smith
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
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16
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Liu X, Farahi G, Chiu CL, Papic Z, Watanabe K, Taniguchi T, Zaletel MP, Yazdani A. Visualizing broken symmetry and topological defects in a quantum Hall ferromagnet. Science 2022; 375:321-326. [PMID: 34855512 DOI: 10.1126/science.abm3770] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
The interaction between electrons in graphene under high magnetic fields drives the formation of a rich set of quantum Hall ferromagnetic (QHFM) phases with broken spin or valley symmetry. Visualizing atomic-scale electronic wave functions with scanning tunneling spectroscopy (STS), we resolved microscopic signatures of valley ordering in QHFM phases and spectral features of fractional quantum Hall phases of graphene. At charge neutrality, we observed a field-tuned continuous quantum phase transition from a valley-polarized state to an intervalley coherent state, with a Kekulé distortion of its electronic density. Mapping the valley texture extracted from STS measurements of the Kekulé phase, we could visualize valley skyrmion excitations localized near charged defects. Our techniques can be applied to examine valley-ordered phases and their topological excitations in a wide range of materials.
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Affiliation(s)
- Xiaomeng Liu
- Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ 08544, USA
| | - Gelareh Farahi
- Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ 08544, USA
| | - Cheng-Li Chiu
- Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ 08544, USA
| | - Zlatko Papic
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, UK
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Michael P Zaletel
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Ali Yazdani
- Joseph Henry Laboratories and Department of Physics, Princeton University, Princeton, NJ 08544, USA
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17
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Prasad N, Burg GW, Watanabe K, Taniguchi T, Register LF, Tutuc E. Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures. PHYSICAL REVIEW LETTERS 2021; 127:117701. [PMID: 34558942 DOI: 10.1103/physrevlett.127.117701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Accepted: 07/31/2021] [Indexed: 06/13/2023]
Abstract
We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement of the quasiparticle state broadening at well-defined energies. The broadening increases linearly with the excited state energy with respect to the Fermi level and is weakly dependent on temperature. In-plane magnetotunneling reveals a high degree of rotational alignment between the graphene bilayers, and an absence of momentum randomizing processes.
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Affiliation(s)
- Nitin Prasad
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
| | - G William Burg
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Leonard F Register
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
| | - Emanuel Tutuc
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
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18
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Altvater MA, Tilak N, Rao S, Li G, Won CJ, Cheong SW, Andrei EY. Charge Density Wave Vortex Lattice Observed in Graphene-Passivated 1T-TaS 2 by Ambient Scanning Tunneling Microscopy. NANO LETTERS 2021; 21:6132-6138. [PMID: 34231367 DOI: 10.1021/acs.nanolett.1c01655] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The nearly commensurate charge density wave (CDW) excitations native to the transition-metal dichalcogenide crystal, 1T-TaS2, under ambient conditions are revealed by scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of a graphene/TaS2 heterostructure. Surface potential measurements show that the graphene passivation layer prevents oxidation of the air-sensitive 1T-TaS2 surface. The graphene protective layer does not however interfere with probing the native electronic properties of 1T-TaS2 by STM/STS, which revealed that nearly commensurate CDW hosts an array of vortex-like topological defects. We find that these topological defects organize themselves to form a lattice with quasi-long-range order, analogous to the vortex Bragg glass in type-II superconductors but accessible in ambient conditions.
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Affiliation(s)
- Michael A Altvater
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Nikhil Tilak
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Skandaprasad Rao
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Guohong Li
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
| | - Choong-Jae Won
- Laboratory for Pohang Emergent Materials, Pohang Accelerator Laboratory and Max Plank POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
- Laboratory for Pohang Emergent Materials, Pohang Accelerator Laboratory and Max Plank POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang 790-784, Korea
- Center for Quantum Materials Synthesis, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Eva Y Andrei
- Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, United States
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19
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Flat band carrier confinement in magic-angle twisted bilayer graphene. Nat Commun 2021; 12:4180. [PMID: 34234146 PMCID: PMC8263728 DOI: 10.1038/s41467-021-24480-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Accepted: 06/14/2021] [Indexed: 11/08/2022] Open
Abstract
Magic-angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating. Techniques to control the twist angle between graphene layers have led to rapid experimental progress but improving sample quality is essential for separating the delicate correlated electron physics from disorder effects. Owing to the 2D nature of the system and the relatively low carrier density, the samples are highly susceptible to small doping inhomogeneity which can drastically modify the local potential landscape. This potential disorder is distinct from the twist angle variation which has been studied elsewhere. Here, by using low temperature scanning tunneling spectroscopy and planar tunneling junction measurements, we demonstrate that flat bands in twisted bilayer graphene can amplify small doping inhomogeneity that surprisingly leads to carrier confinement, which in graphene could previously only be realized in the presence of a strong magnetic field.
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20
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The Different Story of π Bonds. Molecules 2021; 26:molecules26133805. [PMID: 34206583 PMCID: PMC8270318 DOI: 10.3390/molecules26133805] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 06/17/2021] [Accepted: 06/17/2021] [Indexed: 11/24/2022] Open
Abstract
We revisit “classical” issues in multiply bonded systems between main groups elements, namely the structural distortions that may occur at the multiple bonds and that lead, e.g., to trans-bent and bond-length alternated structures. The focus is on the role that orbital hybridization and electron correlation play in this context, here analyzed with the help of simple models for σ- and π-bonds, numerically exact solutions of Hubbard Hamiltonians and first principles (density functional theory) investigations of an extended set of systems.
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21
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Choudhary K, Garrity KF, Camp C, Kalinin SV, Vasudevan R, Ziatdinov M, Tavazza F. Computational scanning tunneling microscope image database. Sci Data 2021; 8:57. [PMID: 33574307 PMCID: PMC7878481 DOI: 10.1038/s41597-021-00824-y] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2020] [Accepted: 01/06/2021] [Indexed: 01/30/2023] Open
Abstract
We introduce the systematic database of scanning tunneling microscope (STM) images obtained using density functional theory (DFT) for two-dimensional (2D) materials, calculated using the Tersoff-Hamann method. It currently contains data for 716 exfoliable 2D materials. Examples of the five possible Bravais lattice types for 2D materials and their Fourier-transforms are discussed. All the computational STM images generated in this work are made available on the JARVIS-STM website ( https://jarvis.nist.gov/jarvisstm ). We find excellent qualitative agreement between the computational and experimental STM images for selected materials. As a first example application of this database, we train a convolution neural network model to identify the Bravais lattice from the STM images. We believe the model can aid high-throughput experimental data analysis. These computational STM images can directly aid the identification of phases, analyzing defects and lattice-distortions in experimental STM images, as well as be incorporated in the autonomous experiment workflows.
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Affiliation(s)
- Kamal Choudhary
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA.
| | - Kevin F Garrity
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Charles Camp
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Maxim Ziatdinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Francesca Tavazza
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
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22
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Abstract
The meso-entropy concept is proposed to re-understand the material world and to develop new carbon-rich materials.
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Affiliation(s)
- Boxu Feng
- Meso-Entropy Matter Lab
- School of Chemistry and Chemical Engineering
- Shanghai Jiao Tong University
- Shanghai 200240
- China
| | - Xiaodong Zhuang
- Meso-Entropy Matter Lab
- School of Chemistry and Chemical Engineering
- Shanghai Jiao Tong University
- Shanghai 200240
- China
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23
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Kosar N, Ayub K, Mahmood T. Surface functionalization of twisted graphene C 32H 15 and C 104H 52 derivatives with alkalis and superalkalis for NLO response; a DFT study. J Mol Graph Model 2020; 102:107794. [PMID: 33212383 DOI: 10.1016/j.jmgm.2020.107794] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2020] [Revised: 10/18/2020] [Accepted: 10/30/2020] [Indexed: 12/14/2022]
Abstract
Herein, we present the detailed comparative study on geometric, electronic, optical and non-linear optical response of alkalis and superalkalis doped twisted graphene. The results illustrate that alkali metals and superalkalis interact with the central ring of the twisted graphene through non-covalent interactions which demonstrate the stability of the resultant complexes. NBO charges indicate the transfer of electrons from dopant (alkali metal atoms and superalkalis) towards twisted graphene sheet. Superalkalis doped twisted graphene complexes exhibit higher first hyperpolarizability values compared to alkali metals analogues. Among superalkalis doped complexes, K3O@C104H52 shows the highest βo value of 1.68 × 105 au. In frequency dependent first hyperpolarizability analysis, strong second harmonic generation (SHG) response of K3O@C32H15 complex is observed at both selected resonance frequency values (532 nm and1064 nm) whereas EOPE value of K3O@C32H15 complex shows higher induced response at 1064 nm wavelength. The static hyperpolarizability (βo) further increases under the influence of applied electric field. Among all complexes, Li3O@C32H15 graphene complex has the highest βo value (1.40 × 105 au) under applied electric field along x axis when sheet is in y-z plane. This analysis will be an important guideline for future studies on twisted graphene based NLO materials.
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Affiliation(s)
- Naveen Kosar
- Department of Chemistry, University of Management and Technology (UMT), C11, Johar Town Lahore, Pakistan
| | - Khurshid Ayub
- Department of Chemistry, COMSATS University Islamabad, Abbottabad Campus, Abbottabad, 22060, Pakistan
| | - Tariq Mahmood
- Department of Chemistry, COMSATS University Islamabad, Abbottabad Campus, Abbottabad, 22060, Pakistan.
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24
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Sun Z, Fang S, Hu YH. 3D Graphene Materials: From Understanding to Design and Synthesis Control. Chem Rev 2020; 120:10336-10453. [PMID: 32852197 DOI: 10.1021/acs.chemrev.0c00083] [Citation(s) in RCA: 152] [Impact Index Per Article: 30.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Carbon materials, with their diverse allotropes, have played significant roles in our daily life and the development of material science. Following 0D C60 and 1D carbon nanotube, 2D graphene materials, with their distinctively fascinating properties, have been receiving tremendous attention since 2004. To fulfill the efficient utilization of 2D graphene sheets in applications such as energy storage and conversion, electrochemical catalysis, and environmental remediation, 3D structures constructed by graphene sheets have been attempted over the past decade, giving birth to a new generation of graphene materials called 3D graphene materials. This review starts with the definition, classifications, brief history, and basic synthesis chemistries of 3D graphene materials. Then a critical discussion on the design considerations of 3D graphene materials for diverse applications is provided. Subsequently, after emphasizing the importance of normalized property characterization for the 3D structures, approaches for 3D graphene material synthesis from three major types of carbon sources (GO, hydrocarbons and inorganic carbon compounds) based on GO chemistry, hydrocarbon chemistry, and new alkali-metal chemistry, respectively, are comprehensively reviewed with a focus on their synthesis mechanisms, controllable aspects, and scalability. At last, current challenges and future perspectives for the development of 3D graphene materials are addressed.
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Affiliation(s)
- Zhuxing Sun
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, United States
| | - Siyuan Fang
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, United States
| | - Yun Hang Hu
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, United States.,School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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25
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Han NT, Dien VK, Thuy Tran NT, Nguyen DK, Su WP, Lin MF. First-principles studies of electronic properties in lithium metasilicate (Li 2SiO 3). RSC Adv 2020; 10:24721-24729. [PMID: 35516185 PMCID: PMC9055164 DOI: 10.1039/d0ra01583k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2020] [Accepted: 06/01/2020] [Indexed: 12/16/2022] Open
Abstract
Lithium metasilicate (Li2SiO3), which could serve as the electrolyte material in Li+-based batteries, exhibits unique lattice symmetry (an orthorhombic crystal), valence and conduction bands, charge density distribution, and van Hove singularities. Delicate analyses, based on reliable first-principles calculations, are utilized to identify the critical multi-orbital hybridizations in Li-O and Si-O bonds, 2s-(2s, 2p x , 2p y , 2p z ) and (3s, 3p x , 3p y , 3p z )-(2s, 2p x , 2p y , 2p z ), respectively. This system shows a huge indirect gap of 5.077 eV. Therefore, there exist many strong covalent bonds, with obvious anisotropy and non-uniformity. On the other hand, the spin-dependent magnetic configurations are thoroughly absent. The theoretical framework could be generalized to explore the essential properties of cathode and anode materials of oxide compounds.
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Affiliation(s)
- Nguyen Thi Han
- Department of Physics, National Cheng Kung University 701 Tainan Taiwan
- Department of Chemistry, Thai Nguyen University of Education 20 Luong Ngoc Quyen, Quang Trung Thai Nguyen City Thai Nguyen Province Vietnam
| | - Vo Khuong Dien
- Department of Physics, National Cheng Kung University 701 Tainan Taiwan
| | - Ngoc Thanh Thuy Tran
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University Tainan 70101 Taiwan
| | - Duy Khanh Nguyen
- Institute of Applied Technology, Thu Dau Mot University Binh Duong Province Vietnam
| | - Wu-Pei Su
- Department of Physics and Texas Center for Superconductivity, University of Houston TX 77204 USA
| | - Ming-Fa Lin
- Department of Physics, National Cheng Kung University 701 Tainan Taiwan
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University Tainan 70101 Taiwan
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26
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Onodera M, Kinoshita K, Moriya R, Masubuchi S, Watanabe K, Taniguchi T, Machida T. Cyclotron Resonance Study of Monolayer Graphene under Double Moiré Potentials. NANO LETTERS 2020; 20:4566-4572. [PMID: 32356662 DOI: 10.1021/acs.nanolett.0c01427] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the first cyclotron resonance study of monolayer graphene under double-moiré potentials in which the crystal axis of graphene is nearly aligned to those of both the top and bottom hexagonal boron nitride (h-BN) layers. Under mid-infrared light irradiation, we observe cyclotron resonance absorption with the following unique features: (1) cyclotron resonance magnetic field BCR is entirely different from that of nonaligned monolayer graphene, (2) BCR exhibits strong electron-hole asymmetry, and (3) splitting of BCR is observed for |ν| < 1, with the split maximum at |ν| = 1, resulting in eyeglass-shaped trajectories. These features are well explained by considering the large bandgap induced by the double moiré potentials, the electron-hole asymmetry in the Fermi velocity, and the Fermi-level-dependent enhancement of spin gaps, which suggests a large electron-electron correlation contribution in this system.
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Affiliation(s)
- Momoko Onodera
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kei Kinoshita
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Rai Moriya
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Zhang Z, Li Y, Song B, Zhang Y, Jiang X, Wang M, Tumbleson R, Liu C, Wang P, Hao XQ, Rojas T, Ngo AT, Sessler JL, Newkome GR, Hla SW, Li X. Intra- and intermolecular self-assembly of a 20-nm-wide supramolecular hexagonal grid. Nat Chem 2020; 12:468-474. [PMID: 32284575 PMCID: PMC7375338 DOI: 10.1038/s41557-020-0454-z] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Accepted: 03/03/2020] [Indexed: 11/09/2022]
Abstract
For the past three decades, the coordination-driven self-assembly of three-dimensional structures has undergone rapid progress; however, parallel efforts to create large discrete two-dimensional architectures-as opposed to polymers-have met with limited success. The synthesis of metallo-supramolecular systems with well-defined shapes and sizes in the range of 10-100 nm remains challenging. Here we report the construction of a series of giant supramolecular hexagonal grids, with diameters on the order of 20 nm and molecular weights greater than 65 kDa, through a combination of intra- and intermolecular metal-mediated self-assembly steps. The hexagonal intermediates and the resulting self-assembled grid architectures were imaged at submolecular resolution by scanning tunnelling microscopy. Characterization (including by scanning tunnelling spectroscopy) enabled the unambiguous atomic-scale determination of fourteen hexagonal grid isomers.
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Affiliation(s)
- Zhe Zhang
- Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Environmental Research at Great Bay, Guangzhou University, Guangzhou, China
- Department of Chemistry, University of South Florida, Tampa, FL, USA
- Key Laboratory of Pesticide & Chemical Biology, Ministry of Education, School of Chemistry, Central China Normal University, Wuhan, China
| | - Yiming Li
- Department of Chemistry, University of South Florida, Tampa, FL, USA.
| | - Bo Song
- Department of Chemistry, University of South Florida, Tampa, FL, USA
| | - Yuan Zhang
- Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA.
- Department of Physics, Old Dominion University, Norfolk, VA, USA.
| | - Xin Jiang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Ming Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Ryan Tumbleson
- Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA
- Nanoscale and Quantum Phenomena Institute and the Department of Physics and Astronomy, Ohio University, Athens, OH, USA
| | - Changlin Liu
- Key Laboratory of Pesticide & Chemical Biology, Ministry of Education, School of Chemistry, Central China Normal University, Wuhan, China
| | - Pingshan Wang
- Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Environmental Research at Great Bay, Guangzhou University, Guangzhou, China
| | - Xin-Qi Hao
- College of Chemistry, Zhengzhou University, Zhengzhou, China
| | - Tomas Rojas
- Nanoscale and Quantum Phenomena Institute and the Department of Physics and Astronomy, Ohio University, Athens, OH, USA
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Anh T Ngo
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Jonathan L Sessler
- Center for Supramolecular Chemistry and Catalysis, Shanghai University, Shanghai, China.
| | - George R Newkome
- Center for Molecular Biology and Biotechnology, Florida Atlantic University, Jupiter, FL, USA
| | - Saw Wai Hla
- Nanoscience and Technology Division, Argonne National Laboratory, Lemont, IL, USA.
- Nanoscale and Quantum Phenomena Institute and the Department of Physics and Astronomy, Ohio University, Athens, OH, USA.
| | - Xiaopeng Li
- Department of Chemistry, University of South Florida, Tampa, FL, USA.
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28
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Nguyen TDH, Pham HD, Lin SY, Lin MF. Featured properties of Li +-based battery anode: Li 4Ti 5O 12. RSC Adv 2020; 10:14071-14079. [PMID: 35498449 PMCID: PMC9051913 DOI: 10.1039/d0ra00818d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2020] [Accepted: 03/18/2020] [Indexed: 11/21/2022] Open
Abstract
3D ternary Li4Ti5O12, a Li+-based battery anode, presents an unusual lattice symmetry (triclinic crystal), band structure, charge density, and density of states under first-principles calculations. It is a large direct-gap semiconductor with E d g ∼ 2.98 eV. The atom-dominated valence and conduction bands, the spatial charge distribution and the atom- and orbital-decomposed van Hove singularities are available for delicate identifications of multi-orbital hybridizations in Li-O and Ti-O bonds. The extremely non-uniform chemical environment, which induces very complicated hopping integrals, directly arises from the large bonding fluctuations and the highly anisotropic configurations. Also, the developed theoretical framework is very useful for fully understanding cathodes and electrolytes of oxide compounds.
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Affiliation(s)
| | - Hai Duong Pham
- Department of Physics, National Cheng Kung University Tainan 701 Taiwan
| | - Shih-Yang Lin
- Department of Physics, National Chung Cheng University Chiayi 62102 Taiwan
| | - Ming-Fa Lin
- Department of Physics, National Cheng Kung University Tainan 701 Taiwan
- Hierarchical Green-Energy Materials Research Center Taiwan
- Quantum Topology Center, National Cheng Kung University Tainan Taiwan 701 Taiwan
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29
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Li SY, Su Y, Ren YN, He L. Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels, and Confined States. PHYSICAL REVIEW LETTERS 2020; 124:106802. [PMID: 32216392 DOI: 10.1103/physrevlett.124.106802] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2019] [Revised: 12/04/2019] [Accepted: 02/19/2020] [Indexed: 06/10/2023]
Abstract
It is quite easy to control spin polarization and the spin direction of a system via magnetic fields. However, there is no such direct and efficient way to manipulate the valley pseudospin degree of freedom. Here, we demonstrate experimentally that it is possible to realize valley polarization and valley inversion in graphene by using both strain-induced pseudomagnetic fields and real magnetic fields. Pseudomagnetic fields, which are quite different from real magnetic fields, point in opposite directions at the two distinct valleys of graphene. Therefore, the coexistence of pseudomagnetic fields and real magnetic fields leads to imbalanced effective magnetic fields at two distinct valleys of graphene. This allows us to control the valley in graphene as conveniently as the electron spin. In this work, we report a consistent observation of valley polarization and inversion in strained graphene via pseudo-Landau levels, splitting of real Landau levels, and valley splitting of confined states using scanning tunneling spectroscopy. Our results highlight a pathway to valleytronics in strained graphene-based platforms.
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Affiliation(s)
- Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Ying Su
- Theoretical Division, T-4 and CNLS, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Ya-Ning Ren
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China
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30
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Deng B, Wang B, Li N, Li R, Wang Y, Tang J, Fu Q, Tian Z, Gao P, Xue J, Peng H. Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal. ACS NANO 2020; 14:1656-1664. [PMID: 31961130 DOI: 10.1021/acsnano.9b07091] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Stacking order has a strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30°-twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have quasicrystal-like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG are investigated using scanning tunneling microscopy and spectroscopy. The energy-dependent local density of states with in situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG and provides insights on the electronic properties and interlayer coupling in this intriguing system.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Binbin Wang
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
| | - Ning Li
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Rongtan Li
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics, Chinese Academy of Sciences , Dalian 116023 , China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
- Academy for Advanced Interdisciplinary Studies , Peking University , Beijing 100871 , China
| | - Qiang Fu
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics, Chinese Academy of Sciences , Dalian 116023 , China
| | - Zhen Tian
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics , Peking University , Beijing 100871 , China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , China
| | - Jiamin Xue
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
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31
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Sciacca D, Peric N, Berthe M, Biadala L, Pirri C, Derivaz M, Massara N, Diener P, Grandidier B. Account of the diversity of tunneling spectra at the germanene/Al(1 1 1) interface. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:055002. [PMID: 31604343 DOI: 10.1088/1361-648x/ab4d15] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Despite the wealth of tunneling spectroscopic studies performed on silicene and germanene, the observation of a well-defined Dirac cone in these materials remains elusive. Here, we study germanene grown on Al(1 1 1) at submonolayer coverages with low temperature scanning tunneling spectroscopy. We show that the tunnelling spectra of the Al(1 1 1) surface and the germanene nanosheets are identical. They exhibit a clear metallic behaviour at the beginning of the experiments, that highlights the strong electronic coupling between the adlayer and the substrate. Over the course of the experiments, the spectra deviate from this initial behaviour, although consecutive spectra measured on the Al(1 1 1) surface and germanene nanosheets are still similar. This spectral diversity is explained by modifications of the tip apex, that arise from the erratic manipulation of the germanium adlayer. The origin of the characteristic features such as a wide band gap, coherence-like peaks or zero-bias anomalies are tentatively discussed in light of the physical properties of Ge and AlGe alloy clusters, that are likely to adsorb at the tip apex.
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Affiliation(s)
- Davide Sciacca
- Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR 8520, 59650 Villeneuve d'Ascq, France. Institut de Science des Materiaux de Mulhouse IS2M UMR 7361 CNRS-Université de Haute Alsace, 3 bis rue Alfred Werner, 68057, Mulhouse, France
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32
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Cea T, Walet NR, Guinea F. Twists and the Electronic Structure of Graphitic Materials. NANO LETTERS 2019; 19:8683-8689. [PMID: 31743649 DOI: 10.1021/acs.nanolett.9b03335] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We analyze the effect of twists on the electronic structure of configurations of infinite stacks of graphene layers. We focus on three different cases: an infinite stack where each layer is rotated with respect to the previous one by a fixed angle, two pieces of semi-infinite graphite rotated with respect to each other, and finally a single layer of graphene rotated with respect to a graphite surface. In all three cases, we find a rich structure, with sharp resonances and flat bands for small twist angles. The method used can be easily generalized to more complex arrangements and stacking sequences.
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Affiliation(s)
- Tommaso Cea
- Imdea Nanoscience , Faraday 9 , 28015 Madrid , Spain
| | - Niels R Walet
- School of Physics and Astronomy , University of Manchester , Manchester , M13 9PY , U.K
| | - Francisco Guinea
- Imdea Nanoscience , Faraday 9 , 28015 Madrid , Spain
- School of Physics and Astronomy , University of Manchester , Manchester , M13 9PY , U.K
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33
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Pizzochero M, Bonfanti M, Martinazzo R. To bend or not to bend, the dilemma of multiple bonds. Phys Chem Chem Phys 2019; 21:26342-26350. [PMID: 31782416 DOI: 10.1039/c9cp05192a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Beyond the second row of the periodic table, the nature of the multiple bonds between the elements of the main groups remains yet elusive, and "non-classical" bonding schemes are often invoked for their description. Here, focusing on group 14, we have performed an accurate modeling of the Si-Si and C-C double bonds, including electron correlation effects. We have shown that Si[double bond, length as m-dash]Si bonds are "classical" and closely resemble C[double bond, length as m-dash]C ones, being similarly subjected to a sort of tug of war in which the σ bond favors distortion and the π bond opposes it. The essential difference between Si and C boils down to the sizes of their valence shells, which determine the π-bending stiffness. In carbon, such a stiffness is large because, upon bending, the atomic s orbitals interfere destructively with the p ones. In silicon, the s shell is smaller than the p one, the bending stiffness is reduced and the π bonds typically succumb, distort, and weaken. Electron correlation plays a major role in this context, since π bonds are far from their molecular orbital limit. Hence, we have further shown that upon weakening the effective repulsion between π electrons one may remove any structural instability, strengthen the π bonds and turn Si into a closer relative of C than it used to be.
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Affiliation(s)
- Michele Pizzochero
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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34
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Zhao M, Xia W, Wang Y, Luo M, Tian Z, Guo Y, Hu W, Xue J. Nb 2SiTe 4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response. ACS NANO 2019; 13:10705-10710. [PMID: 31469545 DOI: 10.1021/acsnano.9b05080] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials with narrow band gaps (∼0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detections. However, most of the 2D materials studied to date have band gaps that are too large. A few of the materials with suitable band gaps are not stable under ambient conditions. In this study, the layered Nb2SiTe4 is shown to be a stable 2D material with a band gap of 0.39 eV. Field-effect transistors based on few-layer Nb2SiTe4 show ambipolar transport with a similar magnitude of electron and hole current and a high charge-carrier mobility of ∼100 cm2 V-1 s-1 at room temperature. Optoelectronic measurements of the devices show clear response to an MIR wavelength of 3.1 μm with a high responsivity of ∼0.66 AW-1. These results establish Nb2SiTe4 as a good candidate for ambipolar devices and MIR detection.
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Affiliation(s)
- Mingxing Zhao
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
- Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050 , China
- University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Wei Xia
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
- University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Yang Wang
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Man Luo
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Zhen Tian
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
| | - Yanfeng Guo
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
| | - Weida Hu
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Jiamin Xue
- School of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , China
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35
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Tran NTT, Nguyen DK, Lin S, Gumbs G, Lin M. Fundamental Properties of Transition‐Metals‐Adsorbed Graphene. Chemphyschem 2019; 20:2473-2481. [DOI: 10.1002/cphc.201900614] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2019] [Revised: 07/14/2019] [Indexed: 11/09/2022]
Affiliation(s)
- Ngoc Thanh Thuy Tran
- Division of Computational Physics, Institute for Computational Science Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Electrical & Electronics Engineering Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Duy Khanh Nguyen
- Laboratory of Applied Physics, Advanced Institute of Materials Science Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Applied Sciences Ton Duc Thang University Ho Chi Minh City Vietnam
| | - Shih‐Yang Lin
- Department of Physics National Chung Cheng University Chiayi Taiwan
| | - Godfrey Gumbs
- Department of Physics and Astronomy Hunter College of the City University of New York New York USA
| | - Ming‐Fa Lin
- Hierachical Green-Energy Materials (Hi-GEM) Research Center National Cheng Kung University Tainan 70101 Taiwan
- Quantum Topological Center National Cheng Kung University Tainan 701 Taiwan
- Department of Physics National Cheng Kung University Tainan 701 Taiwan
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36
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Yin LJ, Shi LJ, Li SY, Zhang Y, Guo ZH, He L. High-Magnetic-Field Tunneling Spectra of ABC-Stacked Trilayer Graphene on Graphite. PHYSICAL REVIEW LETTERS 2019; 122:146802. [PMID: 31050464 DOI: 10.1103/physrevlett.122.146802] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2018] [Indexed: 06/09/2023]
Abstract
ABC-stacked trilayer graphene (TLG) was predicted to exhibit novel many-body phenomena due to the existence of almost dispersionless flat bands near the charge neutrality point. Here, using high-magnetic-field scanning tunneling microscopy, we present Landau Level (LL) spectroscopy measurements of high-quality ABC-stacked TLG on graphite. We observe an approximately linear magnetic-field scaling of valley splitting and spin splitting in the ABC-stacked TLG. Our experiment indicates that the spin splitting decreases dramatically with increasing the LL index. When the lowest LL is partially filled, we find an obvious enhancement of the spin splitting, attributing to strong many-body effects. Moreover, we observe linear energy scaling of the inverse lifetime of quasiparticles, providing an additional evidence for the strong electron-electron interactions in the ABC-stacked TLG. These results imply that interesting broken-symmetry states and novel electron correlated effects could emerge in the ABC-stacked TLG in the presence of high magnetic fields.
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Affiliation(s)
- Long-Jing Yin
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Li-Juan Shi
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Yu Zhang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Zi-Han Guo
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China
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37
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Chung HC, Chiu CW, Lin MF. Spin-polarized magneto-electronic properties in buckled monolayer GaAs. Sci Rep 2019; 9:2332. [PMID: 30787328 PMCID: PMC6382800 DOI: 10.1038/s41598-018-36516-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2017] [Accepted: 11/14/2018] [Indexed: 11/25/2022] Open
Abstract
We develop the generalized tight-binding model to fully explore the magneto-electronic properties of monolayer GaAs, where the buckled structure, multi-orbital chemical bondings, spin-orbit coupling, electric field, and magnetic field are considered simultaneously. The diverse magnetic quantization covers three groups of spin-polarized Landau levels (LLs) near the Fermi level, with the unique initial energies, LL degeneracy, energy spacings, magnetic-field-dependence, and spin splitting. Furthermore, the Landau state probabilities exhibit specific oscillation patterns, being composed of the localization centers, node regularities, and energy-dependent variations of the dominating orbitals. The density of states directly reflects the main features of the LL energy spectra in the form, height, number, and frequency of the spin-split delta-function-like prominent peaks. The electric field leads to the monotonous/nonmonotonous LL energy dispersions, LL crossing behavior, gap modulation, phase transition and enhancement of spin splitting. The complex gap modulations and even semiconductor-semimetal transitions are attributed to the strong competition among the intrinsic interactions, magnetic field, and electric field. Such predicted magneto-electronic properties could be verified by scanning tunneling spectroscopy and are helpful in designing the top-gated and phase-change electronic devices.
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Affiliation(s)
- Hsien-Ching Chung
- Department of Physics, National Kaohsiung Normal University, Kaohsiung, 824, Taiwan.
| | - Chih-Wei Chiu
- Department of Physics, National Kaohsiung Normal University, Kaohsiung, 824, Taiwan.
| | - Ming-Fa Lin
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan.
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38
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Huang BL, Chuu CP, Lin MF. Asymmetry-enriched electronic and optical properties of bilayer graphene. Sci Rep 2019; 9:859. [PMID: 30696876 PMCID: PMC6351665 DOI: 10.1038/s41598-018-37058-9] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2018] [Accepted: 11/29/2018] [Indexed: 12/04/2022] Open
Abstract
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduces substantial changes of wavefunctions, such as gapless topological protected states, standing waves with bonding and anti-bonding characteristics, rich structures in density of states and optical spectra. The wavefunctions present well-behaved standing waves in pure system and complicated node structures in geometry-modulated system. The optical absorption spectra show forbidden optical excitation channels, prominent asymmetric absorption peaks, and dramatic variations in absorption structures. These results provide that the geometry-modulated structure with tunable gate voltage could be used for electronic and optical manipulation in future graphene-based devices.
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Affiliation(s)
- Bor-Luen Huang
- Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan.
- Physics Division, National Center for Theoretical Sciences, Hsinchu, 300, Taiwan.
| | - Chih-Piao Chuu
- Physics Division, National Center for Theoretical Sciences, Hsinchu, 300, Taiwan
| | - Ming-Fa Lin
- Hierarchical Green-Energy Materials Research Center, National Cheng Kung University, Tainan, 701, Taiwan
- Quantum Topology Center, National Cheng Kung University, Tainan, 701, Taiwan
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39
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Do TN, Gumbs G, Shih PH, Huang D, Chiu CW, Chen CY, Lin MF. Peculiar optical properties of bilayer silicene under the influence of external electric and magnetic fields. Sci Rep 2019; 9:624. [PMID: 30679482 PMCID: PMC6345814 DOI: 10.1038/s41598-018-36547-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/14/2018] [Accepted: 11/15/2018] [Indexed: 11/19/2022] Open
Abstract
We conduct a comprehensive investigation of the effect of an applied electric field on the optical and magneto-optical absorption spectra for AB-bt (bottom-top) bilayer silicene. The generalized tight-binding model in conjunction with the Kubo formula is efficiently employed in the numerical calculations. The electronic and optical properties are greatly diversified by the buckled lattice structure, stacking configuration, intralayer and interlayer hopping interactions, spin-orbital couplings, as well as the electric and magnetic fields (\documentclass[12pt]{minimal}
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\begin{document}$${B}_{z}\hat{z}$$\end{document}Bzzˆ). An electric field induces spin-split electronic states, a semiconductor-metal phase transitions and the Dirac cone formations in different valleys, leading to the special absorption features. The Ez-dependent low-lying Landau levels possess lower degeneracy, valley-created localization centers, peculiar distributions of quantum numbers, well-behaved and abnormal energy spectra in Bz-dependencies, and the absence of anti-crossing behavior. Consequently, the specific magneto-optical selection rules exist for diverse excitation categories under certain critical electric fields. The optical gaps are reduced as Ez is increased, but enhanced by Bz, in which the threshold channel might dramatically change in the former case. These characteristics are in sharp contrast with those for layered graphene.
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Affiliation(s)
- Thi-Nga Do
- Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan. .,Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan.
| | - Godfrey Gumbs
- Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, 10065, USA.,Donostia International Physics Center (DIPC), P de Manuel Lardizabal, 4, 20018, San Sebastian, Basque Country, Spain
| | - Po-Hsin Shih
- Department of Physics, National Cheng Kung University, Tainan, Taiwan
| | - Danhong Huang
- US Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, New Mexico, 87117, USA
| | - Chih-Wei Chiu
- Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan.
| | - Chia-Yun Chen
- Department of Materials Science and Engineering, International Curriculum for Advanced Materials Program (iCAMP), National Cheng Kung University, Tainan, Taiwan
| | - Ming-Fa Lin
- Quantum Topology Center, National Cheng Kung University, Tainan, Taiwan.,Hierarchical Green-Energy Materials Research Center, National Cheng Kung University, Tainan, Taiwan
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Burian A, Dore JC, Jurkiewicz K. Structural studies of carbons by neutron and x-ray scattering. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:016501. [PMID: 30462611 DOI: 10.1088/1361-6633/aae882] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Carbon can have many different forms and the characterisation of structural features on a length scale of 1 Å to 10 μm is important in defining its physical and chemical properties for the various forms. The use of either electro-magnetic (x-ray) or particle (neutron) beams plays an important role in determining these characteristics. In this paper, we review the various techniques that are used to determine the structural features by experimental means and how the data are processed to give the required information in a suitable form for detailed analysis by computer simulation. Diffraction methods are used for studies of the atomic arrangement and small-angle scattering techniques are used for studies of microporosity in the sample materials. The experimental data obtained from a wide range of different carbon materials are considered and how these results can be used as a basis for modelling the structures in a quantitative manner is also considered. This information underpins their use as active components in a wide range of functional materials.
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Affiliation(s)
- Andrzej Burian
- A. Chełkowski Institute of Physics, University of Silesia, ul.75 Pułku Piechoty 1, 41-500 Chorzów, Poland. Silesian Center for Education and Interdisciplinary Research, University of Silesia, ul.75 Pułku Piechoty 1A, 41-500 Chorzów, Poland
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Diverse Electronic and Magnetic Properties of Chlorination-Related Graphene Nanoribbons. Sci Rep 2018; 8:17859. [PMID: 30552385 PMCID: PMC6294761 DOI: 10.1038/s41598-018-35627-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2018] [Accepted: 10/10/2018] [Indexed: 11/27/2022] Open
Abstract
The dramatic changes in electronic and magnetic properties are investigated using the first-principles calculations for halogen(X: Cl, Br, I, At)-adsorbed graphene nanoribbons. The rich and unique features are clearly revealed in the atoms-dominated electronic band structures, spin arrangement/magnetic moment, spatial charge distribution, and orbital- and spin-projected density of states. Halogen adsorptions can create the non-magnetic, ferromagnetic or anti-ferromagnetic metals, being mainly determined by concentrations and edge structures. The number of holes per unit cell increases with the adatom concentrations. Furthermore, magnetism becomes nonmagnetic when the adatom concentration is beyond 60% adsorption. There are many low-lying spin-dependent van Hove singularities. The diversified properties are attributed to the significant X-C bonds, the strong X-X bonds, and the adatom- and edge-carbon-induced spin states.
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Kalashnyk N, Jaouen M, Fiorini-Debuisschert C, Douillard L, Attias AJ, Charra F. Electronic effects of the Bernal stacking of graphite on self-assembled aromatic adsorbates. Chem Commun (Camb) 2018; 54:9607-9610. [PMID: 30094435 DOI: 10.1039/c8cc05806g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
Abstract
We compare by Scanning Tunneling Microscopy (STM) self-organized honeycomb monolayers of aromatic molecules formed either on graphite or on graphene. A differential contrast between the adsorption sites observed exclusively on graphite evidences the electronic effects of the symmetry breaking by the staggered atomic layers forming this substrate.
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Affiliation(s)
- Nataliya Kalashnyk
- SPEC, CEA, CNRS, UMR 3680, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France.
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Bonfanti M, Achilli S, Martinazzo R. Sticking of atomic hydrogen on graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:283002. [PMID: 29845971 DOI: 10.1088/1361-648x/aac89f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recent years have witnessed an ever growing interest in the interactions between hydrogen atoms and a graphene sheet. Largely motivated by the possibility of modulating the electric, optical and magnetic properties of graphene, a huge number of studies have appeared recently that added to and enlarged earlier investigations on graphite and other carbon materials. In this review we give a glimpse of the many facets of this adsorption process, as they emerged from these studies. The focus is on those issues that have been addressed in detail, under carefully controlled conditions, with an emphasis on the interplay between the adatom structures, their formation dynamics and the electric, magnetic and chemical properties of the carbon sheet.
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Affiliation(s)
- Matteo Bonfanti
- Institute of Physical and Theoretical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany
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Peng W, Xu T, Diener P, Biadala L, Berthe M, Pi X, Borensztein Y, Curcella A, Bernard R, Prévot G, Grandidier B. Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite. ACS NANO 2018; 12:4754-4760. [PMID: 29641894 DOI: 10.1021/acsnano.8b01467] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The highly oriented pyrolytic graphite (HOPG) surface, consisting of a dangling bond-free lattice, is regarded as a potential substrate for van der Waals heteroepitaxy of two-dimensional layered materials. In this work, the growth of silicon and germanium on HOPG is investigated with scanning tunneling microscopy by using typical synthesis conditions for silicene and germanene on metal surfaces. At low coverages, the deposition of Si and Ge gives rise to tiny and sparse clusters that are surrounded by a honeycomb superstructure. From the detailed analysis of the superstructure, its comparison with the one encountered on the bare and clean HOPG surface, and simulations of the electron density, we conclude that the superstructure is caused by charge density modulations in the HOPG surface. At high coverages, we find the formation of clusters, assembled in filamentary patterns, which indicates a Volmer-Weber growth mode instead of a layer-by-layer growth mode. This coverage-dependent study sets the stage for revisiting recent results alleging the synthesis of silicene and germanene on the HOPG surface.
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Affiliation(s)
- Wenbing Peng
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering , Zhejiang University , Hangzhou , Zhejiang 310027 , China
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
| | - Tao Xu
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
- Key Laboratory of Advanced Display and System Application , Shanghai University , Shanghai 200072 , China
| | - Pascale Diener
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
| | - Louis Biadala
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
| | - Maxime Berthe
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering , Zhejiang University , Hangzhou , Zhejiang 310027 , China
| | - Yves Borensztein
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, UMR 7588 , F-75005 , Paris , France
| | - Alberto Curcella
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, UMR 7588 , F-75005 , Paris , France
| | - Romain Bernard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, UMR 7588 , F-75005 , Paris , France
| | - Geoffroy Prévot
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, UMR 7588 , F-75005 , Paris , France
| | - Bruno Grandidier
- Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France
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Precner M, Polaković T, Qiao Q, Trainer DJ, Putilov AV, Di Giorgio C, Cone I, Zhu Y, Xi XX, Iavarone M, Karapetrov G. Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS 2 Films. Sci Rep 2018; 8:6724. [PMID: 29712931 PMCID: PMC5928116 DOI: 10.1038/s41598-018-24913-y] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2017] [Accepted: 04/12/2018] [Indexed: 12/01/2022] Open
Abstract
We report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS2 films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measurements of the local density of states, work function and nature of defects in MoS2 films. We track the evolution of defects that are formed under heating and electron beam irradiation. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally or e-beam activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS2. Even at equilibrium conditions, the work function and local density of states values are strongly affected near grain boundaries and edges. The results provide initial estimates of the thermal budgets available for reliable fabrication of MoS2-based integrated electronics and indicate the importance of defect control and layer passivation.
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Affiliation(s)
- M Precner
- Department of Physics, Drexel University, Philadelphia, PA, 19104, USA.,Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, 841 04, Slovak Republic
| | - T Polaković
- Department of Physics, Drexel University, Philadelphia, PA, 19104, USA
| | - Qiao Qiao
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA.,Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - D J Trainer
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA
| | - A V Putilov
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA.,Institute for Physics of Microstructures RAS, Nizhny Novgorod, GSP-105, 603950, Russia
| | - C Di Giorgio
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA.,E.R. Caianiello Physics Department and NANOMATES, Research Centre for Nanomaterials and Nanotechnology, University of Salerno, Fisciano (SA), Italy
| | - I Cone
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA.,Department of Physics, University of San Francisco, 2130 Fulton St., San Francisco, CA, 94117, USA
| | - Y Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - X X Xi
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA
| | - M Iavarone
- Department of Physics, Temple University, Philadelphia, PA, 19122, USA
| | - G Karapetrov
- Department of Physics, Drexel University, Philadelphia, PA, 19104, USA.
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Simon S, Voloshina E, Tesch J, Förschner F, Enenkel V, Herbig C, Knispel T, Tries A, Kröger J, Dedkov Y, Fonin M. Layer-by-Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703701. [PMID: 29450969 DOI: 10.1002/smll.201703701] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2017] [Revised: 12/23/2017] [Indexed: 06/08/2023]
Abstract
The electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/Ir(111), is investigated. Using scanning tunneling microscopy and Landau-level spectroscopy, it is shown that for a monolayer and bilayers with small-angle rotations, Landau levels are fully suppressed, indicating that the metal-graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free-standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.
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Affiliation(s)
- Sabina Simon
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
| | - Elena Voloshina
- Physics Department, Shanghai University, Shanghai, 200444, China
| | - Julia Tesch
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
| | - Felix Förschner
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
| | - Vivien Enenkel
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
| | - Charlotte Herbig
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937, Köln, Germany
- Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Timo Knispel
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937, Köln, Germany
| | - Alexander Tries
- Institut für Physik, Technische Universität Ilmenau, 98693, Ilmenau, Germany
| | - Jörg Kröger
- Institut für Physik, Technische Universität Ilmenau, 98693, Ilmenau, Germany
| | - Yuriy Dedkov
- Physics Department, Shanghai University, Shanghai, 200444, China
| | - Mikhail Fonin
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
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Tao W, Singh S, Rossi L, Gerritsen JW, Hendriksen BLM, Khajetoorians AA, Christianen PCM, Maan JC, Zeitler U, Bryant B. A low-temperature scanning tunneling microscope capable of microscopy and spectroscopy in a Bitter magnet at up to 34 T. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2017; 88:093706. [PMID: 28964167 DOI: 10.1063/1.4995372] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We present the design and performance of a cryogenic scanning tunneling microscope (STM) which operates inside a water-cooled Bitter magnet, which can attain a magnetic field of up to 38 T. Due to the high vibration environment generated by the magnet cooling water, a uniquely designed STM and a vibration damping system are required. The STM scan head is designed to be as compact and rigid as possible, to minimize the effect of vibrational noise as well as fit the size constraints of the Bitter magnet. The STM uses a differential screw mechanism for coarse tip-sample approach, and operates in helium exchange gas at cryogenic temperatures. The reliability and performance of the STM are demonstrated through topographic imaging and scanning tunneling spectroscopy on highly oriented pyrolytic graphite at T = 4.2 K and in magnetic fields up to 34 T.
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Affiliation(s)
- W Tao
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - S Singh
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - L Rossi
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - J W Gerritsen
- Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands
| | - B L M Hendriksen
- Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands
| | - A A Khajetoorians
- Institute for Molecules and Materials, Radboud University, Nijmegen, The Netherlands
| | - P C M Christianen
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - J C Maan
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - U Zeitler
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
| | - B Bryant
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 ED Nijmegen, The Netherlands
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Stauber T, Parida P, Trushin M, Ulybyshev MV, Boyda DL, Schliemann J. Interacting Electrons in Graphene: Fermi Velocity Renormalization and Optical Response. PHYSICAL REVIEW LETTERS 2017; 118:266801. [PMID: 28707915 DOI: 10.1103/physrevlett.118.266801] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2017] [Indexed: 06/07/2023]
Abstract
We have developed a Hartree-Fock theory for electrons on a honeycomb lattice aiming to solve a long-standing problem of the Fermi velocity renormalization in graphene. Our model employs no fitting parameters (like an unknown band cutoff) but relies on a topological invariant (crystal structure function) that makes the Hartree-Fock sublattice spinor independent of the electron-electron interaction. Agreement with the experimental data is obtained assuming static self-screening including local field effects. As an application of the model, we derive an explicit expression for the optical conductivity and discuss the renormalization of the Drude weight. The optical conductivity is also obtained via precise quantum Monte Carlo calculations which compares well to our mean-field approach.
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Affiliation(s)
- T Stauber
- Departamento de Teoría y Simulación de Materiales, Instituto de Ciencia de Materiales de Madrid, CSIC, E-28049 Madrid, Spain
| | - P Parida
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - M Trushin
- Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
| | - M V Ulybyshev
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - D L Boyda
- Far Eastern Federal University, Sukhanova 8, Vladivostok 690950, Russia
- ITEP, B. Cheremushkinskaya 25, Moscow 117218, Russia
| | - J Schliemann
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
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50
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Ienaga K, Iimori T, Yaji K, Miyamachi T, Nakashima S, Takahashi Y, Fukuma K, Hayashi S, Kajiwara T, Visikovskiy A, Mase K, Nakatsuji K, Tanaka S, Komori F. Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC. NANO LETTERS 2017; 17:3527-3532. [PMID: 28520435 DOI: 10.1021/acs.nanolett.7b00606] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Local electron-phonon coupling of a one-dimensionally nanorippled graphene is studied on a SiC(0001) vicinal substrate. We have characterized local atomic and electronic structures of a periodically nanorippled graphene (3.4 nm period) prepared on a macrofacet of the 6H-SiC crystal using scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES). The rippled graphene on the macrofacets distributes homogeneously over the 6H-SiC substrate in a millimeter scale, and thus replica bands are detected by the macroscopic ARPES. The STM/STS results indicate the strength of electron-phonon coupling to the out-of-plane phonon at the K̅ points of graphene is periodically modified in accordance with the ripple structure. We propose an interface carbon nanostructure with graphene nanoribbons between the surface rippled graphene and the substrate SiC that periodically modifies the electron-phonon coupling in the surface graphene.
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Affiliation(s)
- Koichiro Ienaga
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Takushi Iimori
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Koichiro Yaji
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Toshio Miyamachi
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Shuhei Nakashima
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Yukio Takahashi
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Kohei Fukuma
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University , Fukuoka 819-0395, Japan
| | - Shingo Hayashi
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University , Fukuoka 819-0395, Japan
| | - Takashi Kajiwara
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University , Fukuoka 819-0395, Japan
| | - Anton Visikovskiy
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University , Fukuoka 819-0395, Japan
| | - Kazuhiko Mase
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK) , Tsukuba 305-0801, Japan
- Department of Materials Structure Science, SOKENDAI (The Graduate University for Advanced Studies) , 1-1 Oho, Tsukuba 305-0801, Japan
| | - Kan Nakatsuji
- Department of Materials Science and Engineering, Tokyo Institute of Technology , Yokohama 226-8502, Japan
| | - Satoru Tanaka
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University , Fukuoka 819-0395, Japan
| | - Fumio Komori
- Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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