Antiferromagnonic spin transport from Y3Fe5O12 into NiO

Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

Manipulating chiral spin transport with ferroelectric polarization

A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.

Magnetic Properties and THz Emission from Co/CoO/Pt and Ni/NiO/Pt Trilayers

THz radiation emitted by ferromagnetic/non-magnetic bilayers is a new emergent field in ultra-fast spin physics phenomena with a lot of potential for technological applications in the terahertz (THz) region of the electromagnetic spectrum. The role of antiferromagnetic layers in the THz emission process is being heavily investigated at the moment. In this work, we fabricate trilayers in the form of Co/CoO/Pt and Ni/NiO/Pt with the aim of studying the magnetic properties and probing the role of very thin antiferromagnetic interlayers like NiO and CoO in transporting ultrafast spin current. First, we reveal the static magnetic properties of the samples by using temperature-dependent Squid magnetometry and then we quantify the dynamic properties with the help of ferromagnetic resonance spectroscopy. We show magnetization reversal that has large exchange bias values and we extract enhanced damping values for the trilayers. THz time-domain spectroscopy examines the influence of the antiferromagnetic interlayer in the THz emission, showing that the NiO interlayer in particular is able to transport spin current.

Spin-torque-driven antiferromagnetic resonance

The intrinsic fast dynamics make antiferromagnetic spintronics a promising avenue for faster data processing. Ultrafast antiferromagnetic resonance-generated spin current provides valuable access to antiferromagnetic spin dynamics. However, the inverse effect, spin-torque-driven antiferromagnetic resonance (ST-AFMR), which is attractive for practical utilization of fast devices but seriously impeded by difficulties in controlling and detecting Néel vectors, remains elusive. We observe ST-AFMR in Y3Fe5O12/α-Fe2O3/Pt at room temperature. The Néel vector oscillates and contributes to voltage signal owing to antiferromagnetic negative spin Hall magnetoresistance-induced spin rectification effect, which has the opposite sign to ferromagnets. The Néel vector in antiferromagnetic α-Fe2O3 is strongly coupled to the magnetization in Y3Fe5O12 buffer, resulting in the convenient control of Néel vectors. ST-AFMR experiment is bolstered by micromagnetic simulations, where both the Néel vector and the canted moment of α-Fe2O3 are in elliptic resonance. These findings shed light on the spin current-induced dynamics in antiferromagnets and represent a step toward electrically controlled antiferromagnetic terahertz emitters.

Long-lived spin waves in a metallic antiferromagnet

Collective spin excitations in magnetically ordered crystals, called magnons or spin waves, can serve as carriers in novel spintronic devices with ultralow energy consumption. The generation of well-detectable spin flows requires long lifetimes of high-frequency magnons. In general, the lifetime of spin waves in a metal is substantially reduced due to a strong coupling of magnons to the Stoner continuum. This makes metals unattractive for use as components for magnonic devices. Here, we present the metallic antiferromagnet CeCo2P2, which exhibits long-living magnons even in the terahertz (THz) regime. For CeCo2P2, our first-principle calculations predict a suppression of low-energy spin-flip Stoner excitations, which is verified by resonant inelastic X-ray scattering measurements. By comparison to the isostructural compound LaCo2P2, we show how small structural changes can dramatically alter the electronic structure around the Fermi level leading to the classical picture of the strongly damped magnons intrinsic to metallic systems. Our results not only demonstrate that long-lived magnons in the THz regime can exist in bulk metallic systems, but they also open a path for an efficient search for metallic magnetic systems in which undamped THz magnons can be excited.

Impact of inherent energy barrier on spin-orbit torques in magnetic-metal/semimetal heterojunctions

Spintronic devices are based on heterojunctions of two materials with different magnetic and electronic properties. Although an energy barrier is naturally formed even at the interface of metallic heterojunctions, its impact on spin transport has been overlooked. Here, using diffusive spin Hall currents, we provide evidence that the inherent energy barrier governs the spin transport even in metallic systems. We find a sizable field-like torque, much larger than the damping-like counterpart, in Ni81Fe19/Bi0.1Sb0.9 bilayers. This is a distinct signature of barrier-mediated spin-orbit torques, which is consistent with our theory that predicts a strong modification of the spin mixing conductance induced by the energy barrier. Our results suggest that the spin mixing conductance and the corresponding spin-orbit torques are strongly altered by minimizing the work function difference in the heterostructure. These findings provide a new mechanism to control spin transport and spin torque phenomena by interfacial engineering of metallic heterostructures.

Magnetic field modulated ultrafast spin dynamics at Ni80Fe20/Neodymium interface

Ultrafast spin dynamics is crucial for the next-generation spintronic devices towards high-speed data processing. Here, we investigate the ultrafast spin dynamics of Neodymium/Ni₈₀Fe₂₀ (Nd/Py) bilayers by the time-resolved magneto-optical Kerr effect. The effective modulation of spin dynamics at Nd/Py interfaces is realized by an external magnetic field. The effective magnetic damping of Py increases with increasing Nd thickness, and a large spin mixing conductance (∼19.35×10¹⁵cm^-2) at Nd/Py interface is obtained, representing the robust spin pumping effect by Nd/Py interface. The tuning effects are suppressed at a high magnetic field due to the reduced antiparallel magnetic moments at Nd/Py interface. Our results contribute to understanding ultrafast spin dynamics and spin transport behavior in high-speed spintronic devices.

Coherent antiferromagnetic spintronics

Antiferromagnets have attracted extensive interest as a material platform in spintronics. So far, antiferromagnet-enabled spin-orbitronics, spin-transfer electronics and spin caloritronics have formed the bases of antiferromagnetic spintronics. Spin transport and manipulation based on coherent antiferromagnetic dynamics have recently emerged, pushing the developing field of antiferromagnetic spintronics towards a new stage distinguished by the features of spin coherence. In this Review, we categorize and analyse the critical effects that harness the coherence of antiferromagnets for spintronic applications, including spin pumping from monochromatic antiferromagnetic magnons, spin transmission via phase-correlated antiferromagnetic magnons, electrically induced spin rotation and ultrafast spin-orbit effects in antiferromagnets. We also discuss future opportunities in research and applications stimulated by the principles, materials and phenomena of coherent antiferromagnetic spintronics.

High-Efficiency Magnon-Mediated Magnetization Switching in All-Oxide Heterostructures with Perpendicular Magnetic Anisotropy

The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron-mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all-oxide heterostructures of SrRuO₃ /NiO/SrIrO₃ are epitaxially grown on SrTiO₃ single-crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO₃ with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO₃ with strong spin-orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion-related energy dissipation from electron-mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all-oxide spintronic devices operated by magnon current.

Mutual spin-phonon driving effects and phonon eigenvector renormalization in nickel (II) oxide

The physics of mutual interaction of phonon quasiparticles with electronic spin degrees of freedom, leading to unusual transport phenomena of spin and heat, has been a subject of continuing interests for decades. Despite its pivotal role in transport processes, the effect of spin-phonon coupling on the phonon system, especially acoustic phonon properties, has so far been elusive. By means of inelastic neutron scattering and first-principles calculations, anomalous scattering spectral intensity from acoustic phonons was identified in the exemplary collinear antiferromagnetic nickel (II) oxide, unveiling strong spin-lattice correlations that renormalize the polarization of acoustic phonon. In particular, a clear magnetic scattering signature of the measured neutron scattering intensity from acoustic phonons is demonstrated by its momentum transfer and temperature dependences. The anomalous scattering intensity is successfully modeled with a modified magneto-vibrational scattering cross-section, suggesting the presence of spin precession driven by phonon. The renormalization of phonon eigenvector is indicated by the observed "geometry-forbidden" neutron scattering intensity from transverse acoustic phonon. Importantly, the eigenvector renormalization cannot be explained by magnetostriction but instead, it could result from the coupling between phonon and local magnetization of ions.

Orthogonal interlayer coupling in an all-antiferromagnetic junction

In conventional ferromagnet/spacer/ferromagnet sandwiches, noncollinear couplings are commonly absent because of the low coupling energy and strong magnetization. For antiferromagnets (AFM), the small net moment can embody a low coupling energy as a sizable coupling field, however, such AFM sandwich structures have been scarcely explored. Here we demonstrate orthogonal interlayer coupling at room temperature in an all-antiferromagnetic junction Fe₂O₃/Cr₂O₃/Fe₂O₃, where the Néel vectors in the top and bottom Fe₂O₃ layers are strongly orthogonally coupled and the coupling strength is significantly affected by the thickness of the antiferromagnetic Cr₂O₃ spacer. From the energy and symmetry analysis, the direct coupling via uniform magnetic ordering in Cr₂O₃ spacer in our junction is excluded. The coupling is proposed to be mediated by the non-uniform domain wall state in the spacer. The strong long-range coupling in an antiferromagnetic junction provides an unexplored approach for designing antiferromagnetic structures and makes it a promising building block for antiferromagnetic devices.

Ferromagnet/spacer/ferromagnet sandwiches have been studied extensively, and used in a variety of spintronic devices. Here, Zhou et al. create an all anti-ferromagnetic sandwich of Fe₂O₃/Cr₂O₃/Fe₂O₃, and demonstrate strong orthogonal coupling between the top and bottom Fe₂O₃ layers.

Piezoelectric Strain-Controlled Magnon Spin Current Transport in an Antiferromagnet

As the core of spintronics, the transport of spin aims at a low-dissipation data process. The pure spin current transmission carried by magnons in antiferromagnetic insulators is natively endowed with superiority such as long-distance propagation and ultrafast speed. However, the traditional control of magnon transport in an antiferromagnet via a magnetic field or temperature variation adds critical inconvenience to practical applications. Controlling magnon transport by electric methods is a promising way to overcome such embarrassment and to promote the development of energy-efficient antiferromagnetic logic. Here, the experimental realization of an electric field-induced piezoelectric strain-controlled magnon spin current transmission through the antiferromagnetic insulator in the Y₃Fe₅O₁₂/Cr₂O₃/Pt trilayer is reported. An efficient and nonvolatile manipulation of magnon propagation/blocking is achieved by changing the relative direction between the Néel vector and spin polarization, which is tuned by ferroelastic strain from the piezoelectric substrate. The piezoelectric strain-controlled antiferromagnetic magnon transport opens an avenue for the exploitation of antiferromagnet-based spin/magnon transistors with ultrahigh energy efficiency.

Exploiting Spin Fluctuations for Enhanced Pure Spin Current

We demonstrate the interplay of pure spin current, spin-polarized current, and spin fluctuation in 3d Ni_{x}Cu_{1-x}. By tuning the compositions of the Ni_{x}Cu_{1-x} alloys, we separate the effects due to the pure spin current and spin-polarized current. By exploiting the interaction of spin current with spin fluctuation in suitable Ni-Cu alloys, we obtain an unprecedentedly high spin Hall angle of 46%, about 5 times larger than that in Pt, at room temperature. Furthermore, we show that spin-dependent thermal transport via anomalous Nernst effect can serve as a sensitive magnetometer to electrically probe the magnetic phase transitions in thin films with in-plane anisotropy. The enhancement of spin Hall angle by exploiting spin current fluctuation via composition control makes 3d magnets functional materials in charge-to-spin conversion for spintronic application.

Sign Change of Spin-Orbit Torque in Pt/NiO/CoFeB Structures

Antiferromagnetic insulators have recently been proved to support spin current efficiently. Here, we report the dampinglike spin-orbit torque (SOT) in Pt/NiO/CoFeB has a strong temperature dependence and reverses the sign below certain temperatures, which is different from the slight variation with temperature in the Pt/CoFeB bilayer. The negative dampinglike SOT at low temperatures is proposed to be mediated by the magnetic interactions that tie with the "exchange bias" in Pt/NiO/CoFeB, in contrast to the thermal-magnon-mediated scenario at high temperatures. Our results highlight the promise to control the SOT through tuning the magnetic structure in multilayers.

Superluminal-like magnon propagation in antiferromagnetic NiO at nanoscale distances

Magnon-mediated angular-momentum flow in antiferromagnets may become a design element for energy-efficient, low-dissipation and high-speed spintronic devices^1,2. Owing to their low energy dissipation, antiferromagnetic magnons can propagate over micrometre distances³. However, direct observation of their high-speed propagation has been elusive due to the lack of sufficiently fast probes². Here we measure the antiferromagnetic magnon propagation in the time domain at the nanoscale (≤50 nm) with optical-driven terahertz emission. In non-magnetic-Bi₂Te₃/antiferromagnetic-insulator-NiO/ferromagnetic-Co trilayers, we observe a magnon velocity of ~650 km s^-1 in the NiO layer. This velocity far exceeds previous estimations of the maximum magnon group velocity of ~40 km s^-1, which were based on the magnon dispersion measurements of NiO using inelastic neutron scattering^4,5. Our theory suggests that for magnon propagation at the nanoscale, a finite damping makes the dispersion anomalous for small magnon wavenumbers and yields a superluminal-like magnon velocity. Given the generality of finite dissipation in materials, our results strengthen the prospects of ultrafast nanodevices using antiferromagnetic magnons.

Observation of Pure-Spin-Current Diodelike Effect at the Au/Pt Interface

Asymmetric charge transport at the interface of two materials with dissimilar electrical properties, such as metal-semiconductor and p-n junctions, is the fundamental feature behind modern diode and transistor technology. Spin pumping from a ferromagnet into an adjacent nonmagnetic material is a powerful technique to generate pure-spin currents, wherein spin transport is unaccompanied by net charge transport. It is therefore interesting to study pure-spin transport at the interface of two materials with different spin transport properties. Here we demonstrate asymmetric transport of pure-spin currents across an interface of dissimilar nonmagnetic materials Au/Pt. We exploit Py/Au/Pt/Co structures where spin pumping can generate pure-spin current from either Py or Co independently. We find that the transmission of pure-spin current from Au into Pt is twice as efficient as transmission from Pt into Au. Experimental results are interpreted by extending conventional spin-pumping, spin-diffusion theory to include boundary conditions of reflected and transmitted spin current at the Au/Pt interface that are proportional to the established spin chemical potentials on either side of the interface.

Current-Induced Manipulation of the Exchange Bias in a Pt/Co/NiO Structure

An experimental study of the phenomenon of electric current influence on the value and orientation of the exchange bias field (H_EB) in the Pt/Co/NiO structure is carried out. Depending on the direction of the magnetization in a ferromagnet (FM) layer and the current pulse amplitude, the value of the H_EB field can be changed repeatedly in the range of ±7.5 mT. A few experiments are performed to separate the contributions from two current-induced effects: (i) an injection of the spin current into an antiferromagnet layer (AFM) and (ii) Joule heating. As a result, we conclude that the modification in the H_EB field during current pulse transmission in the Pt/Co/NiO structure is due to heating and the low value of Néel temperature (T_N = 162 °C). This fact explains the absence of the exchange bias effect on the spin-orbit torque (SOT)-assisted magnetization switching. The most striking observation to emerge from the experimental data analysis is that depending on the initial spin configuration of the domain structure in the FM layer and the current pulse amplitude, the exchange bias can be changed locally. This opens up prospects for creating exchange-coupled FM/AFM structures with dynamically tuned parameters of the exchange bias, which can be used for the development of magnetic memory, neuromorphic, and logic devices based on magnetic nanosystems.

Antiferromagnetic Oxide Thin Films for Spintronic Applications

Antiferromagnetic oxides have recently gained much attention because of the possibility to manipulate electrically and optically the Néel vectors in these materials. Their ultrafast spin dynamics, long spin diffusion length and immunity to large magnetic fields make them attractive candidates for spintronic applications. Additionally, there have been many studies on spin wave and magnon transport in single crystals of these oxides. However, the successful applications of the antiferromagnetic oxides will require similar spin transport properties in thin films. In this work, we systematically show the sputtering deposition method for two uniaxial antiferromagnetic oxides, namely Cr2O3 and α-Fe2O3, on A-plane sapphire substrates, and identify the optimized deposition conditions for epitaxial films with low surface roughness. We also confirm the antiferromagnetic properties of the thin films. The deposition method developed in this article will be important for studying the magnon transport in these epitaxial antiferromagnetic thin films.

Resonant Spin Transmission Mediated by Magnons in a Magnetic Insulator Multilayer Structure

While being electrically insulating, magnetic insulators can behave as good spin conductors by carrying spin current with excited spin waves. So far, magnetic insulators are utilized in multilayer heterostructures for optimizing spin transport or to form magnon spin valves for reaching controls over the spin flow. In these studies, it remains an intensively visited topic as to what the corresponding roles of coherent and incoherent magnons are in the spin transmission. Meanwhile, understanding the underlying mechanism associated with spin transmission in insulators can help to identify new mechanisms that can further improve the spin transport efficiency. Here, by studying spin transport in a magnetic-metal/magnetic-insulator/platinum multilayer, it is demonstrated that coherent magnons can transfer spins efficiently above the magnon bandgap of magnetic insulators. Particularly the standing spin-wave mode can greatly enhance the spin flow by inducing a resonant magnon transmission. Furthermore, within the magnon bandgap, a shutdown of spin transmission due to the blocking of coherent magnons is observed. The demonstrated magnon transmission enhancement and filtering effect provides an efficient method for modulating spin current in magnonic devices.

Fully Spin-Transparent Magnetic Interfaces Enabled by the Insertion of a Thin Paramagnetic NiO Layer

Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here, we report that spin backflow and spin-memory loss at Pt-based heavy metal-ferromagnet interfaces can be effectively eliminated by inserting an insulating paramagnetic NiO layer of optimum thickness. The latter enables the thermal magnon-mediated essentially unity spin-current transmission at room temperature due to considerably enhanced effective spin-mixing conductance of the interface. As a result, we obtain dampinglike spin-orbit torque efficiency per unit current density of up to 0.8 as detected by the standard technology ferromagnet FeCoB and others, which reaches the expected upper-limit spin Hall ratio of Pt. We establish that Pt/NiO and Pt-Hf/NiO are two energy-efficient, integration-friendly, and high-endurance spin-current generators that provide >100 times greater energy efficiency than sputter-deposited topological insulators BiSb and BiSe. Our finding will benefit spin-orbitronic research and advance spin-torque technologies.

Strong Interfacial Perpendicular Magnetic Anisotropy in Exchange-Biased NiO/Co/Au and NiO/Co/NiO Layered Systems

The ability to induce and control the perpendicular magnetic anisotropy (PMA) of ferromagnetic layers has been widely investigated, especially those that offer additional functionalities (e.g., skyrmion stabilization, voltage-based magnetization switching, rapid propagation of domain walls). Out-of-plane magnetized ferromagnetic layers in direct contact with an oxide belong to this class. Nowadays, investigation of this type of system includes antiferromagnetic oxides (AFOs) because of their potential for new approaches to applied spintronics that exploit the exchange bias (EB) coupling between the ferromagnetic and the AFO layer. Here, we investigate PMA and EB effect in NiO/Co/Au and NiO/Co/NiO layered systems. We show that the coercive and EB fields increase significantly when the Co layer is coupled with two NiO layers, instead of one. Surrounding the Co layer only with NiO layers induces a strong PMA resulting in an out-of-plane magnetized system can be obtained without a heavy metal/ferromagnetic interface. The PMA arises from a significant surface contribution (0.74 mJ/m²) that can be enhanced up to 0.99 mJ/m² by annealing at moderate temperatures (~450 K). Using field cooling processes for both systems, we demonstrate a wide-ranging control of the exchange bias field without perturbing other magnetic properties of importance.

Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from magnetic perturbations, and fast spin dynamics. Introducing some of these intriguing features of an antiferromagnet into a low dimensional semiconductor core-shell nanowire offers an exciting pathway for its usage in antiferromagnetic semiconductor spintronics. Here, using a quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell nanowire behaves as an antiferromagnetic semiconductor. The origin of antiferromagnetic spin alignments between Cr is attributed to the superexchange interaction mediated by the p_z orbitals of the Ge atoms that are bonded to Cr. A weak spin-orbit interaction was found in this material, suggesting a longer spin coherence length. The spin-dependent quantum transport calculations in the Cr-doped nanowire junction reveals a switching feature with a high ON/OFF current ratio (∼41 times higher for the ON state at a relatively small bias of 0.83 V).

Different spin axis orientation and large antiferromagnetic domains in Fe-doped NiO/Ru(0001) epitaxial films

We present a spatially resolved X-ray magnetic dichroism study of high-quality, in situ grown nickel oxide films. NiO thin films were deposited on a Ru(0001) substrate by high temperature oxygen-assisted molecular beam epitaxy. We found that by adding a small amount of Fe, the growth mode can be modified in order to promote the formation of micron-sized, triangular islands. The morphology, shape, crystal structure and composition are determined by low-energy electron microscopy and diffraction, and synchrotron based X-ray absorption spectromicroscopy. The element specific XMLD measurements reveal strong antiferromagnetic contrast at room temperature and domains with up to micron sizes, reflecting the high structural quality of the islands. By means of vectorial magnetometry, the spin axis orientation was determined with nanometer spatial resolution, and found to depend on the relative orientation of the film and substrate lattices.

Magnetic Network on Demand: Pressure Tunes Square Lattice Coordination Polymers Based on {[Cu(pyrazine)2]2+}n

We report the pressure-induced structural and magnetic changes in [CuCl(pyz)₂](BF₄) (pyz = pyrazine) and [CuBr(pyz)₂](BF₄), two members of a family of three-dimensional coordination polymers based on square mesh {[Cu(pyz)₂]²⁺}_n layers. High-pressure X-ray diffraction and density functional theory calculations have been used to investigate the structure-magnetic property relationship. Although structurally robust and almost undeformed within a large pressure range, the {[Cu(pyz)₂]²⁺}_n network can be electronically modified by adjusting the interaction of the apical linkers interconnecting the layers, which has strong implications for the magnetic properties. It is then demonstrated that the degree of covalent character of the apical interaction explains the difference in magnetic exchange between the two species. We have also investigated the mechanical deformation of the network induced by nonhydrostatic compression that affects the structure depending on the crystal orientation. The obtained results suggest the existence of "Jahn-Teller frustration" triggered at the highest hydrostatic pressure limit.

Surface Coverage Dependence of Spin-to-Charge Current across Pt/MoS2/Y3Fe5O12 Layers via Longitudinal Spin Seebeck Effect

The voltage induced by the inverse spin Hall effect (ISHE) is affected by several factors, including the spin Hall angle of the normal metal (NM), the quality and magnetic properties of the ferromagnetic material (FM), and the interface conditions between the NM and FM bilayers in longitudinal spin Seebeck effect (LSSE) measurement. Specifically, the interface conditions in NM/FM systems via LSSE devices play a crucial role in determining the efficiency of spin current injection into the NM layer. In this letter, we report a new approach to controlling the efficiency of spin current injection into a Pt layer across a Pt/Y₃Fe₅O₁₂ (YIG) interface by surface coverage of the intermediate layer. A continuous, large-area multilayer molybdenum dichalcogenide (MoS₂) thin film grown by chemical vapor deposition is inserted between the Pt and YIG layers in the LSSE configuration. We found that, when the large-area multilayer MoS₂ film was present, the measured ISHE-induced voltage and theoretically calculated spin current in the Pt/MoS₂/YIG trilayer increased by ∼510% and 470%, respectively, compared to those of a Pt/YIG bilayer. The induced voltage and spin current were very sensitive to the surface conductance, which was affected by the surface coverage of the multilayer MoS₂ films in the LSSE measurement. Furthermore, the theoretically calculated spin current and spin mixing conductance in the trilayer geometry are in qualitatively good agreement with the experimental observations. These measurements enable us to explain the effect of the interface conditions on the spin Seebeck effect in spin transport.

Birefringence-like spin transport via linearly polarized antiferromagnetic magnons

Antiferromagnets (AFMs) possess great potential in spintronics because of their immunity to external magnetic disturbance, the absence of a stray field or the resonance in the terahertz range^1,2. The coupling of insulating AFMs to spin-orbit materials^3-7 enables spin transport via AFM magnons. In particular, spin transmission over several micrometres occurs in some AFMs with easy-axis anisotropy^8,9. Easy-plane AFMs with two orthogonal, linearly polarized magnon eigenmodes own unique advantages for low-energy control of ultrafast magnetic dynamics². However, it is commonly conceived that these magnon modes are less likely to transmit spins because of their vanishing angular momentum^9-11. Here we report experimental evidence that an easy-plane insulating AFM, an α-Fe₂O₃ thin film, can efficiently transmit spins over micrometre distances. The spin decay length shows an unconventional temperature dependence that cannot be captured considering solely thermal magnon scatterings. We interpret our observations in terms of an interference of two linearly polarized, propagating magnons in analogy to the birefringence effect in optics. Furthermore, our devices can realize a bi-stable spin-current switch with a 100% on/off ratio under zero remnant magnetic field. These findings provide additional tools for non-volatile, low-field control of spin transport in AFM systems.

Coherent Transfer of Spin Angular Momentum by Evanescent Spin Waves within Antiferromagnetic NiO

Insulating antiferromagnets have recently emerged as efficient and robust conductors of spin current. Element-specific and phase-resolved x-ray ferromagnetic resonance has been used to probe the injection and transmission of ac spin current through thin epitaxial NiO(001) layers. The spin current is found to be mediated by coherent evanescent spin waves of GHz frequency, rather than propagating magnons of THz frequency, paving the way towards coherent control of the phase and amplitude of spin currents within an antiferromagnetic insulator at room temperature.

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Coherent ac spin current transmission across an antiferromagnetic CoO insulator

The recent discovery of spin current transmission through antiferromagnetic insulating materials opens up vast opportunities for fundamental physics and spintronics applications. The question currently surrounding this topic is: whether and how could THz antiferromagnetic magnons mediate a GHz spin current? This mismatch of frequencies becomes particularly critical for the case of coherent ac spin current, raising the fundamental question of whether a GHz ac spin current can ever keep its coherence inside an antiferromagnetic insulator and so drive the spin precession of another ferromagnet layer coherently? Utilizing element- and time-resolved x-ray pump-probe measurements on Py/Ag/CoO/Ag/Fe₇₅Co₂₅/MgO(001) heterostructures, here we demonstrate that a coherent GHz ac spin current pumped by the Py ferromagnetic resonance can transmit coherently across an antiferromagnetic CoO insulating layer to drive a coherent spin precession of the Fe₇₅Co₂₅ layer. Further measurement results favor thermal magnons rather than evanescent spin waves as the mediator of the coherent ac spin current in CoO.

The mechanism underpinning the frequency mismatch between THz magnons and the GHz spin currents observed in antiferromagnetic insulators remains unknown. Here, the authors demonstrate that, in a Py/Ag/CoO/Ag/Fe₇₅Co₂₅/MgO(001) heterostructure, a GHz spin current transmits coherently across the antiferromagnetic CoO insulating layer to drive a coherent spin precession of the ferromagnetic Fe₇₅Co₂₅ layer.

Spin Seebeck Effect from Antiferromagnetic Magnons and Critical Spin Fluctuations in Epitaxial FeF_{2} Films

We report a longitudinal spin Seebeck effect (SSE) study in epitaxially grown FeF_{2}(110) antiferromagnetic (AFM) thin films with strong uniaxial anisotropy over the temperature range of 3.8-250 K. Both the magnetic-field and temperature-dependent SSE signals below the Néel temperature (T_{N}=70  K) of the FeF_{2} films are consistent with a theoretical model based on the excitations of AFM magnons without any net induced static magnetic moment. In addition to the characteristic low-temperature SSE peak associated with the AFM magnons, there is another SSE peak at T_{N} which extends well into the paramagnetic phase. All the SSE data taken at different magnetic fields up to 12 T near and above the critical point T_{N} follow the critical scaling law very well with the critical exponents for magnetic susceptibility of 3D Ising systems, which suggests that the AFM spin correlation is responsible for the observed SSE near T_{N}.

All-Oxide Nanocomposites to Yield Large, Tunable Perpendicular Exchange Bias above Room Temperature

In all-oxide-based spintronic devices, large exchange bias effect with robustness against temperature fluctuation and compatibility with perpendicular magnetic recording is highly desired. In this work, rock-salt antiferromagnetic NiO with a Néel temperature ( T_N) of ∼525 K and spinel ferrimagnetic NiFe₂O₄ with a high Curie temperature, T_C, ≈ 790 K and T_C > T_N were chosen as compatible materials to form a well-phase-separated, vertically aligned nanocomposite thin film. In this nanoengineered thin film, an exchange bias effect with a blocking temperature far above room temperature has been achieved. A large perpendicular exchange bias field of up to 0.91 kOe with an interfacial exchange energy density of 0.11-0.34 erg/cm² was obtained at room temperature. It was also demonstrated that the exchange bias effect can be easily tuned by changing the alignment of the magnetic moments in the NiO phase using substrates of different crystalline orientations and by changing the microstructure of the film with substrates of different lattice parameters. The results demonstrate that proper choice of the phases (including use of nonperovskite compositions) and careful strain engineering and nanostructure engineering makes oxide nanocomposites strong potential candidate systems for next generation spintronic devices.

Spin torque control of antiferromagnetic moments in NiO

For a long time, there were no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was also difficult to detect the orientation of the magnetic moments since the net magnetic moment is effectively zero. For these reasons, research on antiferromagnets has not been progressed as drastically as that on ferromagnets which are the main materials in modern spintronic devices. Here we show that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density (~4 × 10⁷ A/cm²) and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance. The demonstrated techniques of controlling and detecting antiferromagnets would outstandingly promote the methodologies in the recently emerged “antiferromagnetic spintronics”. Furthermore, our results essentially lead to a spin torque antiferromagnetic memory.

Tunable long-distance spin transport in a crystalline antiferromagnetic iron oxide

Spintronics relies on the transport of spins, the intrinsic angular momentum of electrons, as an alternative to the transport of electron charge as in conventional electronics. The long-term goal of spintronics research is to develop spin-based, low-dissipation computing-technology devices. Recently, long-distance transport of a spin current was demonstrated across ferromagnetic insulators1. However, antiferromagnetically ordered materials, the most common class of magnetic materials, have several crucial advantages over ferromagnetic systems for spintronics applications2: antiferromagnets have no net magnetic moment, making them stable and impervious to external fields, and can be operated at terahertz-scale frequencies3. Although the properties of antiferromagnets are desirable for spin transport4-7, indirect observations of such transport indicate that spin transmission through antiferromagnets is limited to only a few nanometres8-10. Here we demonstrate long-distance propagation of spin currents through a single crystal of the antiferromagnetic insulator haematite (α-Fe2O3)11, the most common antiferromagnetic iron oxide, by exploiting the spin Hall effect for spin injection. We control the flow of spin current across a haematite-platinum interface-at which spins accumulate, generating the spin current-by tuning the antiferromagnetic resonance frequency using an external magnetic field12. We find that this simple antiferromagnetic insulator conveys spin information parallel to the antiferromagnetic Néel order over distances of more than tens of micrometres. This mechanism transports spins as efficiently as the most promising complex ferromagnets1. Our results pave the way to electrically tunable, ultrafast, low-power, antiferromagnetic-insulator-based spin-logic devices6,13 that operate without magnetic fields at room temperature.

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

The static and dynamic magnetization response of the CoFeB/IrMn/CoFeB trilayer system with varying thickness of the antiferromagnetic (AF) IrMn layer is investigated using magnetization hysteresis (M-H) and ferromagnetic resonance (FMR) measurements. The study shows that the two CoFeB layers are coupled via a long-range dynamic exchange effect through the IrMn layer up to a thickness of 6 nm. It is found that with the increase in IrMn layer thickness a nearly linear enhancement of the effective magnetic damping constant occurs, which is associated with the simultaneous influence of spin pumping and interlayer exchange coupling effects. An extrinsic contribution to the linewidth originating from the two-magnon scattering is also discussed. The AF-induced interfacial damping parameter is derived by studying the evolution of damping with inverse CoFeB thickness. The static magnetic measurements also reveal the interlayer exchange coupling across the IrMn layer both at room temperature and low temperature. The asymmetric hysteresis loop and training effect observed at low temperature is related to the presence of a metastable AF domain state. We show that both the static and dynamic magnetic properties of trilayer films can be adjusted over a wide range by changing the thickness of the IrMn spacer layer.

Magnon detection using a ferroic collinear multilayer spin valve

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y₃Fe₅O₁₂|CoO|Co, we find that the detection amplitude of spin currents emitted by ferromagnetic resonance spin pumping depends on the relative alignment of the Y₃Fe₅O₁₂ and Co magnetization. This yields a spin valve-like behavior with an amplitude change of 120% in our systems. We demonstrate the reliability of the effect and identify its origin by both temperature-dependent and power-dependent measurements.

Magnetic Moment Orientation-Dependent Spin Dissipation in Antiferromagnets

Spin interaction in antiferromagnetic materials is of central interest in the recently emerging antiferromagnetic spintronics. In this Letter, we explore the spin current interaction in antiferromagnetic FeMn by the spin pumping effect. Exchange biased FeNi/FeMn films, in which the Néel vector can be presumably controlled via the exchange spring effect, are employed to investigate the damping enhancement depending on the relative orientation between the Néel vector and the polarization of the pumped spin current. The correlation between the enhanced damping and the strength of the exchange bias suggests that the twisting of the Néel vector induces an additional spin dissipation, which verifies that the Slonczewski-type spin torque is effective even in antiferromagnetic materials.

Strong Pinned-Spin-Mediated Memory Effect in NiO Nanoparticles

After a decade of effort, a large number of magnetic memory nanoparticles with different sizes and core/shell compositions have been developed. While the field-cooling memory effect is often attributed to particle size and distribution effects, other magnetic coupling parameters such as inter- and intra-coupling strength, exchange bias, interfacial pinned spins, and the crystallinity of the nanoparticles also have a significant influence on magnetization properties and mechanisms. In this study, we used the analysis of static- and dynamic-magnetization measurements to investigate NiO nanoparticles with different sizes and discussed how these field-cooling strengths affect their memory properties. We conclude that the observed field-cooling memory effect from bare, small size NiO nanoparticles arises because of the unidirectional anisotropy which is mediated by the interfacial strongly pinned spins.

Metallic ferromagnetic films with magnetic damping under 1.4 × 10-3

Low-damping magnetic materials have been widely used in microwave and spintronic applications because of their low energy loss and high sensitivity. While the Gilbert damping constant can reach 10⁻⁴ to 10⁻⁵ in some insulating ferromagnets, metallic ferromagnets generally have larger damping due to magnon scattering by conduction electrons. Meanwhile, low-damping metallic ferromagnets are desired for charge-based spintronic devices. Here, we report the growth of Co₂₅Fe₇₅ epitaxial films with excellent crystalline quality evident by the clear Laue oscillations and exceptionally narrow rocking curve in the X-ray diffraction scans as well as from scanning transmission electron microscopy. Remarkably, the Co₂₅Fe₇₅ epitaxial films exhibit a damping constant <1.4 × 10⁻³, which is comparable to the values for some high-quality Y₃Fe₅O₁₂ films. This record low damping for metallic ferromagnets offers new opportunities for charge-based applications such as spin-transfer-torque-induced switching and magnetic oscillations.

Owing to their conductivity, low-damping metallic ferromagnets are preferred to insulating ferromagnets in charge-based spintronic devices, but are not yet well developed. Here the authors achieve low magnetic damping in CoFe epitaxial films which is comparable to conventional insulating ferromagnetic YIG films.

Enhanced Spin Conductance of a Thin-Film Insulating Antiferromagnet

We investigate spin transport by thermally excited spin waves in an antiferromagnetic insulator. Starting from a stochastic Landau-Lifshitz-Gilbert phenomenology, we obtain the out-of-equilibrium spin-wave properties. In linear response to spin biasing and a temperature gradient, we compute the spin transport through a normal-metal-antiferromagnet-normal-metal heterostructure. We show that the spin conductance diverges as one approaches the spin-flop transition; this enhancement of the conductance should be readily observable by sweeping the magnetic field across the spin-flop transition. The results from such experiments may, on the one hand, enhance our understanding of spin transport near a phase transition, and on the other be useful for applications that require a large degree of tunability of spin currents. In contrast, the spin Seebeck coefficient does not diverge at the spin-flop transition. Furthermore, the spin Seebeck coefficient is finite even at zero magnetic field, provided that the normal metal contacts break the symmetry between the antiferromagnetic sublattices.

Dzyaloshinskii-Moriya Interaction across an Antiferromagnet-Ferromagnet Interface

The antiferromagnet- (AFM-)ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation of an Dzyaloshinskii-Moriya interaction (DMI) across the AFM-FM interface of IrMn/CoFeB thin films. The interfacial DMI is quantitatively measured from the asymmetric spin-wave dispersion in the FM layer using Brillouin light scattering. The DMI strength is enhanced by a factor of 7 with increasing IrMn layer thickness in the range of 1-7.5 nm. Our findings provide deeper insight into the coupling at the AFM-FM interface and may stimulate new device concepts utilizing chiral spin textures such as magnetic Skyrmions in AFM-FM heterostructures.

Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures

Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Spin Superfluidity in Biaxial Antiferromagnetic Insulators

Antiferromagnets may exhibit spin superfluidity since the dipole interaction is weak. We seek to establish that this phenomenon occurs in insulators such as NiO, which is a good spin conductor according to previous studies. We investigate nonlocal spin transport in a planar antiferromagnetic insulator with a weak uniaxial anisotropy. The anisotropy hinders spin superfluidity by creating a substantial threshold that the current must overcome. Nevertheless, we show that applying a high magnetic field removes this obstacle near the spin-flop transition of the antiferromagnet. Importantly, the spin superfluidity can then persist across many micrometers, even in dirty samples.

Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y_{3}Fe_{5}O_{12} Interface

Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y_{3}Fe_{5}O_{12} (YIG) heterostructures with characteristics very different from those in Pt/YIG. This phenomenon indicates that a spin current generated by the spin Hall effect in Pt transmits through the insulating NiO and is reflected from the NiO/YIG interface. The SMR in Pt/NiO/YIG shows a strong temperature dependence dominated by effective spin conductance, due to antiferromagnetic magnons and spin fluctuation. Inverted SMR has been observed below a temperature which increases with the NiO thickness, suggesting a spin-flip reflection from the antiferromagnetic NiO exchange coupled with the YIG.

Observation of spin Seebeck contribution to the transverse thermopower in Ni-Pt and MnBi-Au bulk nanocomposites

Transverse thermoelectric devices produce electric fields perpendicular to an incident heat flux. Classically, this process is driven by the Nernst effect in bulk solids, wherein a magnetic field generates a Lorentz force on thermally excited electrons. The spin Seebeck effect also produces magnetization-dependent transverse electric fields. It is traditionally observed in thin metallic films deposited on electrically insulating ferromagnets, but the films' high resistance limits thermoelectric conversion efficiency. Combining Nernst and spin Seebeck effect in bulk materials would enable devices with simultaneously large transverse thermopower and low electrical resistance. Here we demonstrate experimentally that this is possible in composites of conducting ferromagnets (Ni or MnBi) containing metallic nanoparticles with strong spin–orbit interactions (Pt or Au). These materials display positive shifts in transverse thermopower attributable to inverse spin Hall electric fields in the nanoparticles. This more than doubles the power output of the Ni-Pt materials, establishing proof of principle that the spin Seebeck effect persists in bulk nanocomposites.

The spin Seebeck effect enables thermal-to-electrical energy conversion but the power generated in thin films remains low. Here, Boona et al. use composites of ferromagnetic conductors containing noble metal nanoparticles to show that the effect can enhance the transverse thermopower of bulk materials.

Spin-current probe for phase transition in an insulator

Spin fluctuation and transition have always been one of the central topics of magnetism and condensed matter science. Experimentally, the spin fluctuation is found transcribed onto scattering intensity in the neutron-scattering process, which is represented by dynamical magnetic susceptibility and maximized at phase transitions. Importantly, a neutron carries spin without electric charge, and therefore it can bring spin into a sample without being disturbed by electric energy. However, large facilities such as a nuclear reactor are necessary. Here we show that spin pumping, frequently used in nanoscale spintronic devices, provides a desktop microprobe for spin transition; spin current is a flux of spin without an electric charge and its transport reflects spin excitation. We demonstrate detection of antiferromagnetic transition in ultra-thin CoO films via frequency-dependent spin-current transmission measurements, which provides a versatile probe for phase transition in an electric manner in minute devices.

Whilst neutron scattering is a powerful tool for studying spin fluctuations in materials, its availability is limited to large-scale user facilities. Here, the authors demonstrate how the pumping of pure spin currents can be used as a desktop probe to detect an antiferromagnetic transition.

Europium Silicide - a Prospective Material for Contacts with Silicon

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi₂/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

Enhancement of Thermally Injected Spin Current through an Antiferromagnetic Insulator

We report a large enhancement of thermally injected spin current in normal metal (NM)/antiferromagnet (AF)/yttrium iron garnet (YIG), where a thin AF insulating layer of NiO or CoO can enhance the spin current from YIG to a NM by up to a factor of 10. The spin current enhancement in NM/AF/YIG, with a pronounced maximum near the Néel temperature of the thin AF layer, has been found to scale linearly with the spin-mixing conductance at the NM/YIG interface for NM=3d, 4d, and 5d metals. Calculations of spin current enhancement and spin mixing conductance are qualitatively consistent with the experimental results.