All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

Coherent Control of a Long-Lived Nuclear Memory Spin in a Germanium-Vacancy Multi-Qubit Node

The ability to process and store information on surrounding nuclear spins is a major requirement for group-IV color center-based repeater nodes. We demonstrate coherent control of a ^{13}C nuclear spin strongly coupled to a negatively charged germanium-vacancy center in diamond with coherence times beyond 2.5 s at mK temperatures, which is the longest reported for group-IV defects. Detailed analysis allows us to model the system's dynamics, extract the coupling parameters, and characterize noise. We estimate an achievable memory time of 18.1 s with heating limitations considered, paving the way to successful applications as a quantum repeater node.

Transition-Metal-Related Quantum Emitters in Wurtzite AlN and GaN

Transition-metal centers exhibit a paramagnetic ground state in wide-bandgap semiconductors and are promising for nanophotonics and quantum information processing. Specifically, there is a growing interest in discovering prominent paramagnetic spin defects that can be manipulated using optical methods. Here, we investigate the electronic structure and magneto-optical properties of Cr and Mn substitutional centers in wurtzite AlN and GaN. We use state-of-the-art hybrid density functional theory calculations to determine level structure, stability, optical signatures, and magnetic properties of these centers. The excitation energies are calculated using the constrained occupation approach and rigorously verified with the complete active space configuration interaction approach. Our simulations of the photoluminescence spectra indicate that Cr Al 1 + in AlN and Cr Ga 1 + in GaN are responsible for the observed narrow quantum emission near 1.2 eV. We compute the zero-field splitting (ZFS) parameters and outline an optical spin polarization protocol for Cr Al 1 + and Cr Ga 1 + . Our results demonstrate that these centers are promising candidates for spin qubits.

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Quantum interference is a natural consequence of wave-particle duality in quantum mechanics, and is widely observed at the atomic scale. One interesting manifestation of quantum interference is coherent population trapping (CPT), first proposed in three-level driven atomic systems and observed in quantum optical experiments. Here, we demonstrate CPT in a gate-defined semiconductor double quantum dot (DQD), with some unique twists as compared to the atomic systems. Specifically, we observe CPT in both driven and nondriven situations. We further show that CPT in a driven DQD could be used to generate adiabatic state transfer. Moreover, our experiment reveals a nontrivial modulation to the CPT caused by the longitudinal driving field, yielding an odd-even effect and a tunable CPT. Our results broaden the field of CPT, and open up the possibility of quantum simulation and quantum computation based on adiabatic passage in quantum dot systems.

Photo-Induced Charge State Dynamics of the Neutral and Negatively Charged Silicon Vacancy Centers in Room-Temperature Diamond

The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, multi-color confocal microscopy and density functional theory are used to examine photo-induced SiV recombination - from neutral, to single-, to double-negatively charged - over a broad spectral window in chemical-vapor-deposition (CVD) diamond under ambient conditions. For the SiV0 to SiV- transition, a linear growth of the photo-recombination rate with laser power at all observed wavelengths is found, a hallmark of single photon dynamics. Laser excitation of SiV‒, on the other hand, yields only fractional recombination into SiV2‒, a finding that is interpreted in terms of a photo-activated electron tunneling process from proximal nitrogen atoms.

Coherent electric field control of orbital state of a neutral nitrogen-vacancy center

The coherent control of the orbital state is crucial for realizing the extremely-low power manipulation of the color centers in diamonds. Herein, a neutrally-charged nitrogen-vacancy center, NV0, is proposed as an ideal system for orbital control using electric fields. The electric susceptibility in the ground state of NV0 is estimated, and found to be comparable to that in the excited state of NV-. Also, the coherent control of the orbital states of NV0 is demonstrated. The required power for orbital control is three orders of magnitude smaller than that for spin control, highlighting the potential for interfacing a superconducting qubit operated in a dilution refrigerator.

Strongly coupled spins of silicon-vacancy centers inside a nanodiamond with sub-megahertz linewidth

The search for long-lived quantum memories, which can be efficiently interfaced with flying qubits, is longstanding. One possible solution is to use the electron spin of a color center in diamond to mediate interaction between a long-lived nuclear spin and a photon. Realizing this in a nanodiamond furthermore facilitates the integration into photonic devices and enables the realization of hybrid quantum systems with access to quantum memories. Here, we investigated the spin environment of negatively charged silicon-vacancy centers in a nanodiamond and demonstrate strong coupling of its electron spin, while the electron spin's decoherence rate remained below 1 MHz. We furthermore demonstrate multi-spin coupling with the potential to establish registers of quantum memories in nanodiamonds.

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Fiber-taper collected emission from NV centers in high-Q/V diamond microdisks

Fiber-coupled microdisks are a promising platform for enhancing the spontaneous emission from color centers in diamond. The measured cavity-enhanced emission from the microdisk is governed by the effective volume (V) of each cavity mode, the cavity quality factor (Q), and the coupling between the microdisk and the fiber. Here we observe room temperature photoluminescence from an ensemble of nitrogen-vacancy centers into high Q/V microdisk modes, which when combined with coherent spectroscopy of the microdisk modes, allows us to elucidate the relative contributions of these factors. The broad emission spectrum acts as an internal light source facilitating mode identification over several cavity free spectral ranges. Analysis of the fiber taper collected microdisk emission reveals spectral filtering both by the cavity and the fiber taper, the latter of which we find preferentially couples to higher-order microdisk modes. Coherent mode spectroscopy is used to measure Q ∼ 1 × 105 - the highest reported values for diamond microcavities operating at visible wavelengths. With realistic optimization of the microdisk dimensions, we predict that Purcell factors of ∼50 are within reach.

Hyperfine Spectroscopy and Fast, All-Optical Arbitrary State Initialization and Readout of a Single, Ten-Level ^{73}Ge Vacancy Nuclear Spin Qudit in Diamond

A high-spin nucleus coupled to a color center can act as a long-lived memory qudit in a spin-photon interface. The germanium vacancy (GeV) in diamond has attracted recent attention due to its excellent spectral properties and provides access to the ten-dimensional Hilbert space of the I=9/2 ^{73}Ge nucleus. Here, we observe the ^{73}GeV  hyperfine structure, perform nuclear spin readout, and optically initialize the ^{73}Ge spin into any eigenstate on a μs timescale and with a fidelity of up to ∼84%. Our results establish ^{73}GeV as an optically addressable high-spin quantum platform for a high-efficiency spin-photon interface as well as for foundational quantum physics and metrology.

Large-scale optical characterization of solid-state quantum emitters

Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. Here we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of colour centres. We first demonstrate the ability to track colour centres by registering them to a fabricated machine-readable global coordinate system, enabling a systematic comparison of the same colour centre sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of colour centres and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable the accelerated identification of useful quantum emitters at chip scale, enabling advances in scaling up colour centre platforms for quantum information applications, materials science and device design and characterization.

Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer

Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.

A Telecom O-Band Emitter in Diamond

Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold.

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV-) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye-Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV- centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV- centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV- centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730-800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

Hands-On Quantum Sensing with NV− Centers in Diamonds

The physical properties of diamond crystals, such as color or electrical conductivity, can be controlled via impurities. In particular, when doped with nitrogen, optically active nitrogen-vacancy centers (NV), can be induced. The center is an outstanding quantum spin system that enables, under ambient conditions, optical initialization, readout, and coherent microwave control with applications in sensing and quantum information. Under optical and radio frequency excitation, the Zeeman splitting of the degenerate states allows the quantitative measurement of external magnetic fields with high sensitivity. This study provides a pedagogical introduction to the properties of the NV centers as well as a step-by-step process to develop and test a simple magnetic quantum sensor based on color centers with significant potential for the development of highly compact multisensor systems.

Stabilization of spin states of an open system: bichromatic driving of resonance transitions in NV ensembles in diamond

We apply a laser and two nearly degenerate microwave fields upon an ensemble of nitrogen-vacancy centers in diamond and observe magnetic resonance structures with two-component, composite shapes of nested Lorentzians with different widths. One component of them undergoes regular power-broadening, whereas the linewidth of the other one becomes power-independent and undergoes field-induced stabilization. We show that the observed width stabilization is a general phenomenon that results from competition between coherent driving and non-conservation of populations that occur in open systems. The phenomenon is interpreted in terms of specific combinations of state populations that play the role of bright and dark states.

Deterministic generation of entanglement states between Silicon-Vacancy centers via acoustic modes

We propose a scheme to entangle Silicon-Vacancy (SiV) centers embedded in a diamond acoustic waveguide. These SiV centers interact with acoustic modes of the waveguide via strain-induced coupling. Through Morris-Shore transformation, the Hilbert space of this hybrid quantum system can be factorized into a closed subspace in which we can deterministically realize the symmetrical Dicke states between distant SiV centers with high fidelity. In addition, the generation of entangled Dicke states can be controlled by manipulating the strength and frequency of the driving field applied on SiV centers. This protocol provides a promising way to prepare multipartite entanglement in spin-phonon hybrid systems and could have broad applications for future quantum technologies.

Super-Poissonian Light Statistics from Individual Silicon Vacancy Centers Coupled to a Laser-Written Diamond Waveguide

Modifying light fields at the single-photon level is a key challenge for upcoming quantum technologies and can be realized in a scalable manner through integrated quantum photonics. Laser-written diamond photonics offers 3D fabrication capabilities and large mode-field diameters matched to fiber optic technology, though limiting the cooperativity at the single-emitter level. To realize large coupling efficiencies, we combine excitation of single shallow-implanted silicon vacancy centers via high numerical aperture optics with detection assisted by laser-written type-II waveguides. We demonstrate single-emitter extinction measurements with a cooperativity of 0.0050 and a relative beta factor of 13%. The transmission of resonant photons reveals single-photon subtraction from a quasi-coherent field resulting in super-Poissonian light statistics. Our architecture enables light field engineering in an integrated design on the single quantum level although the intrinsic cooperativity is low. Laser-written structures can be fabricated in three dimensions and with a natural connectivity to optical fiber arrays.

Efficient Source of Shaped Single Photons Based on an Integrated Diamond Nanophotonic System

An efficient, scalable source of shaped single photons that can be directly integrated with optical fiber networks and quantum memories is at the heart of many protocols in quantum information science. We demonstrate a deterministic source of arbitrarily temporally shaped single-photon pulses with high efficiency [detection efficiency=14.9%] and purity [g^{(2)}(0)=0.0168] and streams of up to 11 consecutively detected single photons using a silicon-vacancy center in a highly directional fiber-integrated diamond nanophotonic cavity. Combined with previously demonstrated spin-photon entangling gates, this system enables on-demand generation of streams of correlated photons such as cluster states and could be used as a resource for robust transmission and processing of quantum information.

Recent Developments of Nanodiamond Quantum Sensors for Biological Applications

Measuring certain quantities at the nanoscale is often limited to strict conditions such as low temperature or vacuum. However, the recently developed nanodiamond (ND) quantum sensing technology shows great promise for ultrasensitive diagnosis and probing subcellular parameters at ambient conditions. Atom defects (i.e., N, Si) within the ND lattice provide stable emissions and sometimes spin-dependent photoluminescence. These unique properties endow ND quantum sensors with the capacity to detect local temperature, magnetic fields, electric fields, or strain. In this review, some of the recent, most exciting developments in the preparation and application of ND sensors to solve current challenges in biology and medicine including ultrasensitive detection of virions and local sensing of pH, radical species, magnetic fields, temperature, and rotational movements, are discussed.

Prolonged Orbital Relaxation by Locally Modified Phonon Density of States for the SiV^{-} Center in Nanodiamonds

Coherent quantum systems are a key resource for emerging quantum technology. Solid-state spin systems are of particular importance for compact and scalable devices. However, interaction with the solid-state host degrades the coherence properties. The negatively charged silicon vacancy center in diamond is such an example. While spectral properties are outstanding, with optical coherence protected by the defects symmetry, the spin coherence is susceptible to rapid orbital relaxation limiting the spin dephasing time. A prolongation of the orbital relaxation time is therefore of utmost urgency and has been tackled by operating at very low temperatures or by introducing large strain. However, both methods have significant drawbacks: the former requires use of dilution refrigerators and the latter affects intrinsic symmetries. Here, a novel method is presented to prolong the orbital relaxation with a locally modified phonon density of states in the relevant frequency range, by restricting the diamond host to below 100 nm. Subsequently measured coherent population trapping shows an extended spin dephasing time compared to the phonon-limited time in a pure bulk diamond. The method works at liquid helium temperatures of few Kelvin and in the low-strain regime.

Antisite defect qubits in monolayer transition metal dichalcogenides

Being atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.

Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.

Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies

Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via "smart-cut" and isotopically (¹²C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces (R_q ≤ 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in situ overgrowth incorporation. Within 110-nm-thick membranes, individual germanium-vacancy (GeV^-) centers exhibit stable photoluminescence at 5.4 K and average optical transition line widths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV^-) centers shows Ramsey spin dephasing times (T₂^*) and Hahn echo times (T₂) as long as 150 and 400 μs, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.

Hidden Silicon-Vacancy Centers in Diamond

We characterize a high-density sample of negatively charged silicon-vacancy (SiV^{-}) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of SiV^{-} centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic T_{2} times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.

Coupling silicon vacancy centers in a thin diamond membrane to a silica optical microresonator

We report the development of a composite cavity QED system, in which silicon vacancy centers in a diamond membrane as thin as 100 nm couple to optical whispering gallery modes (WGMs) of a silica microsphere with a diameter of order 50 µm. The membrane induces a linewidth broadening of 3 MHz for equatorial and off-resonant WGMs, while the overall linewidth of the composite system remains below 40 MHz. Photoluminescence experiments in the cavity QED setting demonstrate the efficient coupling of optical emissions from silicon vacancy centers into the WGMs. Additional analysis indicates that the composite system can be used to achieve the good cavity limit in cavity QED, enabling an experimental platform for applications such as state transfer between spins and photons.

Optical Control of a Single Nuclear Spin in the Solid State

We demonstrate a novel method for coherent optical manipulation of individual nuclear spins in the solid state, mediated by the electronic states of a proximal quantum emitter. Specifically, using the nitrogen-vacancy (NV) color center in diamond, we demonstrate control of a proximal ^{14}N nuclear spin via an all-optical Raman technique. We evaluate the extent to which the intrinsic physical properties of the NV center limit the performance of coherent control, and we find that it is ultimately constrained by the relative rates of transverse hyperfine coupling and radiative decay in the NV center's excited state. Possible extensions and applications to other color centers are discussed.

Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10  ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

Quantum nanophotonics with group IV defects in diamond

Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Quantum Network Nodes Based on Diamond Qubits with an Efficient Nanophotonic Interface

Quantum networks require functional nodes consisting of stationary registers with the capability of high-fidelity quantum processing and storage, which efficiently interface with photons propagating in an optical fiber. We report a significant step towards realization of such nodes using a diamond nanocavity with an embedded silicon-vacancy (SiV) color center and a proximal nuclear spin. Specifically, we show that efficient SiV-cavity coupling (with cooperativity C>30) provides a nearly deterministic interface between photons and the electron spin memory, featuring coherence times exceeding 1 ms. Employing coherent microwave control, we demonstrate heralded single photon storage in the long-lived spin memory as well as a universal control over a cavity-coupled two-qubit register consisting of a SiV and a proximal ^{13}C nuclear spin with nearly second-long coherence time, laying the groundwork for implementing quantum repeaters.

Recovering the Homogeneous Absorption of Inhomogeneous Media

The resonant absorption of light by an ensemble of absorbers decreases when the resonance is inhomogeneously broadened. Recovering the lost absorption cross section is of great importance for various applications of light-matter interactions, particularly in quantum optics, but no recovery mechanism has yet been identified and successfully demonstrated. Here, we formulate the limit set by the inhomogeneity on the absorption, and present a mechanism able to circumvent this limit and fully recover the homogeneous absorption of the ensemble. We experimentally study this mechanism using two different level schemes in atomic vapors and demonstrate up to fivefold enhancement of the absorption above the inhomogeneous limit. Our scheme relies on light shifts induced by auxiliary fields and is thus applicable to various physical systems and inhomogeneity mechanisms.

Initialization and Readout of Nuclear Spins via a Negatively Charged Silicon-Vacancy Center in Diamond

In this Letter, we demonstrate initialization and readout of nuclear spins via a negatively charged silicon-vacancy (SiV) electron spin qubit. Under Hartmann-Hahn conditions the electron spin polarization is coherently transferred to the nuclear spin. The readout of the nuclear polarization is observed via the fluorescence of the SiV. We also show that the coherence time of the nuclear spin (6 ms) is limited by the electron spin-lattice relaxation due to the hyperfine coupling to the electron spin. This Letter paves the way toward realization of building blocks of quantum hardware with an efficient spin-photon interface based on the SiV color center coupled to a long lasting nuclear memory.

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Nanodiamonds hosting colour centres are a promising material platform for various quantum technologies. The fabrication of non-aggregated and uniformly-sized nanodiamonds with systematic integration of single quantum emitters has so far been lacking. Here, we present a top-down fabrication method to produce 30.0 ± 5.4 nm uniformly-sized single-crystal nanodiamonds by block copolymer self-assembled nanomask patterning together with directional and isotropic reactive ion etching. We show detected emission from bright single nitrogen vacancy centres hosted in the fabricated nanodiamonds. The lithographically precise patterning of large areas of diamond by self-assembled masks and their release into uniformly sized nanodiamonds open up new possibilities for quantum information processing and sensing.

Neutral Silicon-Vacancy Color Center in Diamond: Cluster Simulation of Spatial and Hyperfine Characteristics

One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in solids in which electrons can play a role of “fast” qubits, while nuclear spins can store quantum information for a very long time due to their exceptionally high isolation from the environment. The well-known representative of such systems is the “nitrogen-vacancy” (NV) center in diamond coupled by a hyperfine interaction to its intrinsic [Formula: see text]N/[Formula: see text]N nuclear spin or to [Formula: see text]C nuclear spins presenting in the diamond lattice. More recently, other paramagnetic color centers in diamond have been identified exhibiting even better characteristics in comparison to the NV center. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for one of the new color centers in diamond, viz., neutral “silicon-vacancy” (SiV0) color center, is a primary goal of this paper, in which we are presenting preliminary results of computer simulation of spatial and hyperfine characteristics of SiV0 center in H-terminated clusters C[Formula: see text][SiV0]H[Formula: see text] and C[Formula: see text][SiV0]H[Formula: see text].

Coherent Control and Wave Mixing in an Ensemble of Silicon-Vacancy Centers in Diamond

Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications due to the relative ease of fabrication of components. Silicon vacancy centers (SiV^{-}) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via the four-wave mixing of a weak signal field in an ensemble of SiV^{-} centers.

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

Cavity-Enhanced Raman Emission from a Single Color Center in a Solid

We demonstrate cavity-enhanced Raman emission from a single atomic defect in a solid. Our platform is a single silicon-vacancy center in diamond coupled with a monolithic diamond photonic crystal cavity. The cavity enables an unprecedented frequency tuning range of the Raman emission (100 GHz) that significantly exceeds the spectral inhomogeneity of silicon-vacancy centers in diamond nanostructures. We also show that the cavity selectively suppresses the phonon-induced spontaneous emission that degrades the efficiency of Raman photon generation. Our results pave the way towards photon-mediated many-body interactions between solid-state quantum emitters in a nanophotonic platform.

Fast and Unconditional All-Microwave Reset of a Superconducting Qubit

Active qubit reset is a key operation in many quantum algorithms, and particularly in quantum error correction. Here, we experimentally demonstrate a reset scheme for a three-level transmon artificial atom coupled to a large bandwidth resonator. The reset protocol uses a microwave-induced interaction between the |f,0⟩ and |g,1⟩ states of the coupled transmon-resonator system, with |g⟩ and |f⟩ denoting the ground and second excited states of the transmon, and |0⟩ and |1⟩ the photon Fock states of the resonator. We characterize the reset process and demonstrate reinitialization of the transmon-resonator system to its ground state in less than 500 ns and with 0.2% residual excitation. Our protocol is of practical interest as it has no additional architectural requirements beyond those needed for fast and efficient single-shot readout of transmons, and does not require feedback.

Observation of an environmentally insensitive solid-state spin defect in diamond

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV⁰). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV⁰ SiV⁰ exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV⁰ a promising defect for quantum network applications.

Vacuum induced transparency in metamaterials

For the cavity-based electromagnetically induced transparent (EIT), as the coherent driving field is enhanced by the optical cavity, the weak probe field can propagate through the atomic ensemble without absorption even if the driving field is weak. The extreme case of vacuum in the cavity is called "vacuum-induced transparency" (VIT) to distinguish it from the cavity EIT. Here we construct a new kind of cavity made of Metamaterials, i.e. ε-negative (EN) and μ-negative (MN) slabs, and study the VIT phenomena of the atomic ensemble doped within it. When the impedances of the MN and EN slabs are matched to each other and the dissipation of the material is small, it behaves as a surface plasmon cavity with a huge Q factor. And the VIT phenomenon in this cavity appears. By adjusting the position of atoms, the coupling strength between the atom and the structure could be changed. Two kinds of extremes of VIT, the coherent population trapping (CPT) and the Autler-Townes splitting (ATS), can be achieved in this system easily. Our proposal could be used in the realization of ultra-strong coupling and integrated devices on quantum memory or optical switch.

One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment

Single electron spins coupled to multiple nuclear spins provide promising multi-qubit registers for quantum sensing and quantum networks. The obtainable level of control is determined by how well the electron spin can be selectively coupled to, and decoupled from, the surrounding nuclear spins. Here we realize a coherence time exceeding a second for a single nitrogen-vacancy electron spin through decoupling sequences tailored to its microscopic nuclear-spin environment. First, we use the electron spin to probe the environment, which is accurately described by seven individual and six pairs of coupled carbon-13 spins. We develop initialization, control and readout of the carbon-13 pairs in order to directly reveal their atomic structure. We then exploit this knowledge to store quantum states in the electron spin for over a second by carefully avoiding unwanted interactions. These results provide a proof-of-principle for quantum sensing of complex multi-spin systems and an opportunity for multi-qubit quantum registers with long coherence times.

Phonon Networks with Silicon-Vacancy Centers in Diamond Waveguides

We propose and analyze a novel realization of a solid-state quantum network, where separated silicon-vacancy centers are coupled via the phonon modes of a quasi-one-dimensional diamond waveguide. In our approach, quantum states encoded in long-lived electronic spin states can be converted into propagating phonon wave packets and be reabsorbed efficiently by a distant defect center. Our analysis shows that under realistic conditions, this approach enables the implementation of high-fidelity, scalable quantum communication protocols within chip-scale spin-qubit networks. Apart from quantum information processing, this setup constitutes a novel waveguide QED platform, where strong-coupling effects between solid-state defects and individual propagating phonons can be explored at the quantum level.

Controlling the coherence of a diamond spin qubit through its strain environment

The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. For quantum bits in the solid state, decoherence from thermal vibrations of the surrounding lattice can typically only be suppressed by lowering the temperature of operation. Here, we use a nano-electro-mechanical system to mitigate the effect of thermal phonons on a spin qubit - the silicon-vacancy colour centre in diamond - without changing the system temperature. By controlling the strain environment of the colour centre, we tune its electronic levels to probe, control, and eventually suppress the interaction of its spin with the thermal bath. Strain control provides both large tunability of the optical transitions and significantly improved spin coherence. Finally, our findings indicate the possibility to achieve strong coupling between the silicon-vacancy spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.

Selective Optical Addressing of Nuclear Spins through Superhyperfine Interaction in Rare-Earth Doped Solids

In Er^{3+}:Y_{2}SiO_{5}, we demonstrate the selective optical addressing of the ^{89}Y^{3+} nuclear spins through their superhyperfine coupling with the Er^{3+} electronic spins possessing large Landé g factors. We experimentally probe the electron-nuclear spin mixing with photon echo techniques and validate our model. The site-selective optical addressing of the Y^{3+} nuclear spins is designed by adjusting the magnetic field strength and orientation. This constitutes an important step towards the realization of long-lived solid-state qubits optically addressed by telecom photons.

On-Demand Generation of Neutral and Negatively Charged Silicon-Vacancy Centers in Diamond

Point defects in wide-band-gap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science, but our understanding of the photoionization dynamics is presently incomplete. Here, we use two-color confocal microscopy to investigate the dynamics of charge in type 1b diamond hosting nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers. By examining the nonlocal fluorescence patterns emerging from local laser excitation, we show that, in the simultaneous presence of photogenerated electrons and holes, SiV (NV) centers selectively transform into the negative (neutral) charge state. Unlike NVs, 532 nm illumination ionizes SiV^{-} via a single-photon process, thus hinting at a comparatively shallower ground state. In particular, slower ionization rates at longer wavelengths suggest the latter lies approximately ∼1.9  eV below the conduction band minimum. Building on the above observations, we demonstrate on-demand SiV and NV charge initialization over large areas via green laser illumination of variable intensity.

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes to be formed and has significant impacts on microelectromechanical systems (MEMS), atomic force microscopy (AFM), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively coupled plasma reactive ion etcher is presented, which selectively reveals desired crystal planes in monocrystalline diamond by controlling the etching conditions. Using this principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half-tapering angle up to 21° is achieved, the highest angle reported in the literature, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of a crystallographic orientation dependent reactive ion etching principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for the structuring and patterning of other single crystal materials as well.

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres

Nanodidamonds containing colour centres open up many applications in quantum information processing, metrology, and quantum sensing. However, controlling the synthesis of nanodiamonds containing silicon vacancy (SiV) centres is still not well understood. Here we study nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures. Different growth temperatures and relative content of silicon in the initial compound between the samples altered their nanodiamond size distributions and abundance of SiV centres. Our results show that nanodiamond growth can be controlled and optimised for different applications.

Metal-dielectric antennas for efficient photon collection from diamond color centers

A central challenge in quantum technologies based on atom-like defects is the efficient collection of the emitter's fluorescence. Optical antennas are appealing as they offer directional emission together with spontaneous emission rate enhancement across a broad emitter spectrum. In this work, we introduce and optimize metal-dielectric nanoantenna designs recessed into a diamond substrate and aligned with quantum emitters. We analyze tradeoffs between external quantum efficiency, collection efficiency, radiative Purcell factor, and overall collected photon rate. This analysis shows that an optimized metal-dielectric hybrid structure can increase the collected photon rate from a nitrogen vacancy center by over two orders of magnitude compared to a bare emitter.

All-Optical Control of the Silicon-Vacancy Spin in Diamond at Millikelvin Temperatures

The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of its spin states. We utilize this method to explore spin dephasing effects in an impurity-rich sample beyond the limit of phonon-induced decoherence: Employing Ramsey and Hahn-echo techniques at temperatures down to 40 mK we identify resonant coupling to a substitutional nitrogen spin bath as limiting decoherence source for the electron spin.