Tin-Vacancy Quantum Emitters in Diamond

Predicting the Electron Density of Charged Systems Using Machine Learning

The prediction of the electron density in molecules and crystals is a key pillar in the first-principles computation of their properties. Using machine learning to predict the electron density by using the atomic structure alone can save the computational cost of performing first-principles computations. While various machine learning approaches have been introduced for predicting the electron density, none of them predict the electron density for charged systems. This work extends a recent machine learning charge density model, DeepDFT, by including the charge of the structure as an input parameter into the model. We establish an input charge representation approach that successfully predicts the charged electron densities for several test cases, including charged defective perovskites, LiCoO2 supercells with multiple Li vacancies, diamond-based defects, metal-organic frameworks, and molecular crystals.

Metalens formed by structured arrays of atomic emitters

Arrays of atomic emitters have proven to be a promising platform to manipulate and engineer optical properties, due to their efficient cooperative response to near-resonant light. Here, we theoretically investigate their use as an efficient metalens. We show that, by spatially tailoring the (subwavelength) lattice constants of three consecutive two-dimensional arrays of identical atomic emitters, one can realize a large transmission coefficient with arbitrary position-dependent phase shift, whose robustness against losses is enhanced by the collective response. To characterize the efficiency of this atomic metalens, we perform large-scale numerical simulations involving a substantial number of atoms (N ∼ 5 × 105) that is considerably larger than comparable works. Our results suggest that low-loss, robust optical devices with complex functionalities, ranging from metasurfaces to computer-generated holograms, could be potentially assembled from properly engineered arrays of atomic emitters.

Nonlinear Quantum Photonics with a Tin-Vacancy Center Coupled to a One-Dimensional Diamond Waveguide

Color centers integrated with nanophotonic devices have emerged as a compelling platform for quantum science and technology. Here, we integrate tin-vacancy centers in a diamond waveguide and investigate the interaction with light at the single-photon level in both reflection and transmission. We observe single-emitter-induced extinction of the transmitted light up to 25% and measure the nonlinear effect on the photon statistics. Furthermore, we demonstrate fully tunable interference between the reflected single-photon field and laser light backscattered at the fiber end and show the corresponding controlled change between bunched and antibunched photon statistics in the reflected field.

Heterogeneous integration of spin-photon interfaces with a CMOS platform

Colour centres in diamond have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria1 and recently achieving quantum advantage in secret key distribution2. Blueprint studies3-5 indicate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logical qubits, presenting an open scalability challenge. Here we introduce a modular quantum system-on-chip (QSoC) architecture that integrates thousands of individually addressable tin-vacancy spin qubits in two-dimensional arrays of quantum microchiplets into an application-specific integrated circuit designed for cryogenic control. We demonstrate crucial fabrication steps and architectural subcomponents, including QSoC transfer by means of a 'lock-and-release' method for large-scale heterogeneous integration, high-throughput spin-qubit calibration and spectral tuning, and efficient spin state preparation and measurement. This QSoC architecture supports full connectivity for quantum memory arrays by spectral tuning across spin-photon frequency channels. Design studies building on these measurements indicate further scaling potential by means of increased qubit density, larger QSoC active regions and optical networking across QSoC modules.

Tempering Multichannel Photon Emission from Emitter-Coupled Holographic Metasurfaces

On-chip manipulation of photon emission from quantum emitters (QEs) is crucial for quantum nanophotonics and advanced optical applications. At the same time, the general design strategy is still elusive, especially for fully exploring the degrees of freedom of multiple channels. Here, the vectorial scattering holography (VSH) approach developed recently for flexibly designing QE-coupled metasurfaces is extended to tempering the strength of QE emission into a particular channel. The VSH power is demonstrated by designing, fabricating, and optically characterizing on-chip QE sources emitted into six differently oriented propagation channels, each representing the entangled state of orthogonal circular polarizations with different topological charges and characterized with a specific relative strength. We postulate that the demonstration of tempered multichannel photon emission from QE-coupled metasurfaces significantly broadens the possibilities provided by the holographic metasurface platform, especially those relevant for high-dimensional quantum information processing.

Transform-Limited Photon Emission from a Lead-Vacancy Center in Diamond above 10 K

Transform-limited photon emission from quantum emitters is essential for high-fidelity entanglement generation. In this Letter, we report the coherent optical property of a single negatively charged lead-vacancy (PbV) center in diamond. Photoluminescence excitation measurements reveal stable fluorescence with a linewidth of 39 MHz at 6 K, close to the transform limit estimated from the lifetime measurement. We observe 4 orders of magnitude different linewidths of the two zero-phonon lines, and find that the phonon-induced relaxation in the ground state contributes to this huge difference in the linewidth. Because of the suppressed phonon absorption in the PbV center, we observe nearly transform-limited photon emission up to 16 K, demonstrating its high temperature robustness compared to other color centers in diamond.

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1-1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

A special issue preface: diamond for quantum applications

This special issue discusses current progress in the utilization of defect centres in diamond as spin-photon interfaces for quantum applications. This issue is based on the discussions of the Theo Murphy meeting 'Diamond for quantum applications' which covered the recent progress of diamond growth and engineering for the creation and optimization of colour centres, toward the integration of diamond-based qubits in quantum systems. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation

The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.

The application of the SCAN density functional to color centers in diamond

Detailed characterization of deep-level color centers requires understanding their electronic and atomic structure, which is most commonly investigated utilizing the Kohn-Sham density functional theory. Standard semilocal functionals based on the generalized gradient approximation (GGA) are inclined toward an imprecise quantitative description of defects' electronic structure. Hybrid functionals provide an improved prediction of electronic properties, albeit at a much higher computational cost. In this work, we test the newly developed Strongly Constrained and Appropriately Normed (SCAN) family of meta-GGA density functionals for selected color centers in diamond. In particular, we study nitrogen-, silicon-, germanium-, and tin-vacancy centers that have been recently investigated for their use in quantum technological applications. We show that SCAN and its derivatives, the rSCAN and r2SCAN functionals, significantly improve the calculated energies of optical transitions within the delta-self-consistent-field approach, almost reaching the accuracy of the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. In the case of the NV- center, we also show that the SCAN family of functionals improves the description of the adiabatic potential energy surfaces compared to both GGA and hybrid functionals, improving calculated luminescence lineshapes. As a result of these findings, we recommend using the SCAN family of functionals as a promising alternative for studying color centers in solids.

Fabrication of single color centers in sub-50 nm nanodiamonds using ion implantation

Diamond color centers have been widely studied in the field of quantum optics. The negatively charged silicon vacancy (SiV-) center exhibits a narrow emission linewidth at the wavelength of 738 nm, a high Debye-Waller factor, and unique spin properties, making it a promising emitter for quantum information technologies, biological imaging, and sensing. In particular, nanodiamond (ND)-based SiV- centers can be heterogeneously integrated with plasmonic and photonic nanostructures and serve as in vivo biomarkers and intracellular thermometers. Out of all methods to produce NDs with SiV- centers, ion implantation offers the unique potential to create controllable numbers of color centers in preselected individual NDs. However, the formation of single color centers in NDs with this technique has not been realized. We report the creation of single SiV- centers featuring stable high-purity single-photon emission through Si implantation into NDs with an average size of ∼20 nm. We observe room temperature emission, with zero-phonon line wavelengths in the range of 730-800 nm and linewidths below 10 nm. Our results offer new opportunities for the controlled production of group-IV diamond color centers with applications in quantum photonics, sensing, and biomedicine.

Magnesium-Vacancy Optical Centers in Diamond

We provide the first systematic characterization of the structural and photoluminescence properties of optically active centers fabricated upon implantation of 30-100 keV Mg⁺ ions in synthetic diamond. The structural configurations of Mg-related defects were studied by the electron emission channeling technique for short-lived, radioactive ²⁷Mg implantations at the CERN-ISOLDE facility, performed both at room temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (∼30 to 42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (∼13 to 17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in the 5-300 K temperature range, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications.

Photonic Indistinguishability of the Tin-Vacancy Center in Nanostructured Diamond

Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with 99.7_{-2.5}^{+0.3}% purity and 63(9)% indistinguishability from a resonantly excited tin-vacancy center in a single-mode waveguide. We obtain quantum control of the optical transition with 1.71(1)-ns-long π pulses of 77.1(8)% fidelity and show it is spectrally stable over 100 ms. A modest Purcell enhancement factor of 12 would enhance the indistinguishability to 95%.

Room-temperature single-photon emitters in silicon nitride

Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>10⁵ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g⁽²⁾(0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.

Ag-Diamond Core-Shell Nanostructures Incorporated with Silicon-Vacancy Centers

Silicon-vacancy (SiV) centers in diamond have attracted attention as highly stable fluorophores for sensing and as possible candidates for quantum information science. While prior studies have shown that the formation of hybrid diamond-metal structures can increase the rates of optical absorption and emission, many practical applications require diamond plasmonic structures that are stable in harsh chemical and thermal environments. Here, we demonstrate that Ag nanospheres, produced both in quasi-random arrays by thermal dewetting and in ordered arrays using electron-beam lithography, can be completely encapsulated with a thin diamond coating containing SiV centers, leading to hybrid core-shell nanostructures exhibiting extraordinary chemical and thermal stability as well as enhanced optical properties. Diamond shells with a thickness on the order of 20-100 nm are sufficient to encapsulate and protect the Ag nanostructures with different sizes ranging from 20 nm to hundreds of nanometers, allowing them to withstand heating to temperatures of 1000 °C and immersion in harsh boiling acid for 24 h. Ultrafast photoluminescence lifetime and super-resolution optical imaging experiments were used to study the SiV properties on and off the core-shell structures, which show that the SiV on core-shell structures have higher brightness and faster decay rate. The stability and optical properties of the hybrid Ag-diamond core-shell structures make them attractive candidates for high-efficiency imaging and quantum-based sensing applications.

Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond

Quantum emitters in diamond are leading optically accessible solid-state qubits. Among these, Group IV-vacancy defect centers have attracted great interest as coherent and stable optical interfaces to long-lived spin states. Theory indicates that their inversion symmetry provides first-order insensitivity to stray electric fields, a common limitation for optical coherence in any host material. Here we experimentally quantify this electric field dependence via an external electric field applied to individual tin-vacancy (SnV) centers in diamond. These measurements reveal that the permanent electric dipole moment and polarizability are at least 4 orders of magnitude smaller than for the diamond nitrogen vacancy (NV) centers, representing the first direct measurement of the inversion symmetry protection of a Group IV defect in diamond. Moreover, we show that by modulating the electric-field-induced dipole we can use the SnV as a nanoscale probe of local electric field noise, and we employ this technique to highlight the effect of spectral diffusion on the SnV.

Toward Quantitative Bio-sensing with Nitrogen-Vacancy Center in Diamond

The long-dreamed-of capability of monitoring the molecular machinery in living systems has not been realized yet, mainly due to the technical limitations of current sensing technologies. However, recently emerging quantum sensors are showing great promise for molecular detection and imaging. One of such sensing qubits is the nitrogen-vacancy (NV) center, a photoluminescent impurity in a diamond lattice with unique room-temperature optical and spin properties. This atomic-sized quantum emitter has the ability to quantitatively measure nanoscale electromagnetic fields via optical means at ambient conditions. Moreover, the unlimited photostability of NV centers, combined with the excellent diamond biocompatibility and the possibility of diamond nanoparticles internalization into the living cells, makes NV-based sensors one of the most promising and versatile platforms for various life-science applications. In this review, we will summarize the latest developments of NV-based quantum sensing with a focus on biomedical applications, including measurements of magnetic biomaterials, intracellular temperature, localized physiological species, action potentials, and electronic and nuclear spins. We will also outline the main unresolved challenges and provide future perspectives of many promising aspects of NV-based bio-sensing.

Field-based design of a resonant dielectric antenna for coherent spin-photon interfaces

We propose a field-based design for dielectric antennas to interface diamond color centers in dielectric membranes with a Gaussian propagating far field. This antenna design enables an efficient spin-photon interface with a Purcell factor exceeding 400 and a 93% mode overlap to a 0.4 numerical aperture far-field Gaussian mode. The antenna design with the back reflector is robust to fabrication imperfections, such as variations in the dimensions of the dielectric perturbations and the emitter dipole location. The field-based dielectric antenna design provides an efficient free-space interface for closely packed arrays of quantum memories for multiplexed quantum repeaters, arrayed quantum sensors, and modular quantum computers.

Rare-earth metal catalysts for high-pressure synthesis of rare diamonds

The combination of the unique properties of diamond and the prospects for its high-technology applications urges the search for new solvents–catalysts for the synthesis of diamonds with rare and unusual properties. Here we report the synthesis of diamond from melts of 15 rare-earth metals (REM) at 7.8 GPa and 1800–2100 °C. The boundary conditions for diamond crystallization and the optimal parameters for single crystal diamond synthesis are determined. Depending on the REM catalyst, diamond crystallizes in the form of cube–octahedrons, octahedrons and specific crystals bound by tetragon–trioctahedron and trigon–trioctahedron faces. The synthesized diamonds are nitrogen-free and belong to the rare type II, indicating that the rare-earth metals act as both solvent–catalysts and nitrogen getters. It is found that the REM catalysts enable synthesis of diamond doped with group IV elements with formation of impurity–vacancy color centers, promising for the emerging quantum technologies. Our study demonstrates a new field of application of rare-earth metals.

First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride

A recent study associates carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN, suggests the existence of SPEs based on carbon clusters. Here, by means of density functional theory calculations, we studied clusters of substitutional carbon atoms up to tetramers in h-BN. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in the experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements because of the large spectral weight of low-energy breathing modes, ubiquitous in such defects.

Quantum Information and Algorithms for Correlated Quantum Matter

Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.

Fluorine-based color centers in diamond

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600–670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.

Enhancing Spin-Phonon and Spin-Spin Interactions Using Linear Resources in a Hybrid Quantum System

Hybrid spin-mechanical setups offer a versatile platform for quantum science and technology, but improving the spin-phonon as well as the spin-spin couplings of such systems remains a crucial challenge. Here, we propose and analyze an experimentally feasible and simple method for exponentially enhancing the spin-phonon and the phonon-mediated spin-spin interactions in a hybrid spin-mechanical setup, using only linear resources. Through modulating the spring constant of the mechanical cantilever with a time-dependent pump, we can acquire a tunable and nonlinear (two-phonon) drive to the mechanical mode, thus amplifying the mechanical zero-point fluctuations and directly enhancing the spin-phonon coupling. This method allows the spin-mechanical system to be driven from the weak-coupling regime to the strong-coupling regime, and even the ultrastrong coupling regime. In the dispersive regime, this method gives rise to a large enhancement of the phonon-mediated spin-spin interactions between distant solid-state spins, typically two orders of magnitude larger than that without modulation. As an example, we show that the proposed scheme can apply to generating entangled states of multiple spins with high fidelities even in the presence of large dissipations.

Versatile direct-writing of dopants in a solid state host through recoil implantation

Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe⁺ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices.

Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond

We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using β^{-} emission channeling following low fluence ^{121}Sn implantation (2×10^{12}  atoms/cm^{2}, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. Our data show that the split-vacancy configuration is formed immediately upon implantation with a surprisingly high efficiency of ≈40%. Upon thermal annealing at 920 °C ≈30% of Sn is found in the ideal bond-center position. Photoluminescence revealed the characteristic SnV^{-} line at 621 nm, with an extraordinarily narrow ensemble linewidth (2.3 nm) of near-perfect Lorentzian shape. These findings further establish the SnV^{-} center as a promising candidate for single photon emission applications, since, in addition to exceptional optical properties, it also shows a remarkably simple structural formation mechanism.

Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition

Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.

High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO₂ on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.

Photoluminescence studies of nitrogen-vacancy and silicon-vacancy centers transformation in CVD diamond

In this study, the low-temperature micro-photoluminescence (PL) technology was employed to investigate the transformation of nitrogen-vacancy (NV), silicon-vacancy (SiV) centers in diamond crystal. Results showed that the NV and SiV luminescence were controlled by electron irradiation followed by thermal annealing. Both centers vanished together with the emergence of neutral single vacancy (GR1 center) after 200 keV electron irradiation. Interstitial related defects and vacancies were activated to diffuse by annealing (above ∼400 and 700 °C, respectively). The vacancies migrated to be captured by N and Si atoms due to the strain fields around the atoms attracted vacancies, and the NV and SiV centers appeared again in the PL spectra. In addition, compared the annealing behavior with NV center, the new emission at 639.7 nm was attributed to the nitrogen combined with carbon interstitials.

Vanadium spin qubits as telecom quantum emitters in silicon carbide

Solid-state quantum emitters with spin registers are promising platforms for quantum communication, yet few emit in the narrow telecom band necessary for low-loss fiber networks. Here, we create and isolate near-surface single vanadium dopants in silicon carbide (SiC) with stable and narrow emission in the O band, with brightness allowing cavity-free detection in a wafer-scale material. In vanadium ensembles, we characterize the complex d ¹ orbital physics in all five available sites in 4H-SiC and 6H-SiC. The optical transitions are sensitive to mass shifts from local silicon and carbon isotopes, enabling optically resolved nuclear spin registers. Optically detected magnetic resonance in the ground and excited orbital states reveals a variety of hyperfine interactions with the vanadium nuclear spin and clock transitions for quantum memories. Last, we demonstrate coherent quantum control of the spin state. These results provide a path for telecom emitters in the solid state for quantum applications.

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV^-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV^- centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes, and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phonon limited with an exponential temperature scaling leading to T_{1}>10  ms, and the coherence time, T_{2}^{*} reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.

Quantum nanophotonics with group IV defects in diamond

Diamond photonics is an ever-growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field shaped by the nitrogen-vacancy (NV) centre with both breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged-group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond

Qubits based on colour centres in diamond became a prominent system for solid-state quantum information processing and sensing. But the deterministic creation of qubits and the control of their environment are still critical issues, preventing the development of a room-temperature quantum computer. We report on the high creation yield of NV centres of 75% (a tenfold enhancement) by charge-assisted defect engineering, together with an improvement of their spin coherence. The method strongly favours the formation and negative charge state of the NV centres with respect to intrinsic diamond, while it hinders the formation of competing and perturbing defects such as di-vacancies or NVH complexes. We evidence spectrally the charge state tuning of the implantation-induced vacancies from V⁰ to V⁻, key element of this Coulomb-driven engineering. The generality of the method is demonstrated using several donors (phosphorous, oxygen and sulphur) and applying it to other centres (SnV and MgV) in diamond.

Nitrogen vacancy centres occur naturally in diamond and have potential uses in quantum computing but many applications require scalable, accurate fabrication methods. Here the authors demonstrate that tuning the doping modifies the dynamics of centre formation, increasing yields and coherence times.

Effect of Rare-Earth Element Oxides on Diamond Crystallization in Mg-Based Systems

Diamond crystallization in Mg-R2O3-C systems (R = Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb) was studied at 7.8 GPa and 1800 °C. It was found that rare-earth oxide additives in an amount of 10 wt % did not significantly affect both the degree of graphite-to-diamond conversion and crystal morphology relative to the Mg-C system. The effect of higher amounts of rare-earth oxide additives on diamond crystallization was studied for a Mg-Sm2O3-C system with a Sm2O3 content varied from 0 to 50 wt %. It was established that with an increase in the Sm2O3 content in the growth system, the degree of graphite-to-diamond conversion decreased from 80% at 10% Sm2O3 to 0% at 40% Sm2O3. At high Sm2O3 contents (40 and 50 wt %), instead of diamond, mass crystallization of metastable graphite was established. The observed changes in the degree of the graphite-to-diamond conversion, the changeover of diamond crystallization to the crystallization of metastable graphite, and the changes in diamond crystal morphology with increasing the Sm2O3 content attested the inhibiting effect of rare-earth oxides on diamond crystallization processes in the Mg-Sm-O-C system. The crystallized diamonds were studied by a suite of optical spectroscopy techniques, and the major characteristics of their defect and impurity structures were revealed. For diamond crystals produced with 10 wt % and 20 wt % Sm2O3 additives, a specific photoluminescence signal comprising four groups of lines centered at approximately 580, 620, 670, and 725 nm was detected, which was tentatively assigned to emission characteristic of Sm3+ ions.

Initialization and Readout of Nuclear Spins via a Negatively Charged Silicon-Vacancy Center in Diamond

In this Letter, we demonstrate initialization and readout of nuclear spins via a negatively charged silicon-vacancy (SiV) electron spin qubit. Under Hartmann-Hahn conditions the electron spin polarization is coherently transferred to the nuclear spin. The readout of the nuclear polarization is observed via the fluorescence of the SiV. We also show that the coherence time of the nuclear spin (6 ms) is limited by the electron spin-lattice relaxation due to the hyperfine coupling to the electron spin. This Letter paves the way toward realization of building blocks of quantum hardware with an efficient spin-photon interface based on the SiV color center coupled to a long lasting nuclear memory.

Cascaded Cavities Boost the Indistinguishability of Imperfect Quantum Emitters

Recently, Grange et al. [Phys. Rev. Lett. 114, 193601 (2015)PRLTAO0031-900710.1103/PhysRevLett.114.193601] showed the possibility of single-photon generation with a high indistinguishability from a quantum emitter despite strong pure dephasing, by "funneling" emission into a photonic cavity. Here, we show that a cascaded two-cavity system can further improve the photon characteristics and greatly reduce the Q factor requirement to levels achievable with present-day technology. Our approach leverages recent advances in nanocavities with an ultrasmall mode volume and does not require ultrafast excitation of the emitter. These results were obtained by numerical and closed-form analytical models with strong emitter dephasing, representing room-temperature quantum emitters.

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Nanodiamonds hosting colour centres are a promising material platform for various quantum technologies. The fabrication of non-aggregated and uniformly-sized nanodiamonds with systematic integration of single quantum emitters has so far been lacking. Here, we present a top-down fabrication method to produce 30.0 ± 5.4 nm uniformly-sized single-crystal nanodiamonds by block copolymer self-assembled nanomask patterning together with directional and isotropic reactive ion etching. We show detected emission from bright single nitrogen vacancy centres hosted in the fabricated nanodiamonds. The lithographically precise patterning of large areas of diamond by self-assembled masks and their release into uniformly sized nanodiamonds open up new possibilities for quantum information processing and sensing.

Optical bistability and multistability induced by quantum coherence in diamond germanium-vacancy color centers

Optical bistability (OB) and optical multistability (OM) behaviors are investigated theoretically in a four-level N-type diamond germanium-vacancy (GeV) color center scheme immersed in a unidirectional ring cavity based on electromagnetically induced transparency (EIT). It is found that OB behavior is very sensitive to the system parameters, such as the detunings of probe and coupling fields and the intensities of coupling fields as well as the density of GeV centers, and the thresholds of OB can be controlled via changing these parameters. In addition, we can switch OB to OM by adjusting the intensity of control field and the density of GeV centers or vice versa. Our results may provide some guidance for an all-optical switching, optical communications, and optical logic devices in a solid-state system.

Coherent Control and Wave Mixing in an Ensemble of Silicon-Vacancy Centers in Diamond

Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications due to the relative ease of fabrication of components. Silicon vacancy centers (SiV^{-}) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via the four-wave mixing of a weak signal field in an ensemble of SiV^{-} centers.

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

Observation of an environmentally insensitive solid-state spin defect in diamond

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV⁰). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV⁰ SiV⁰ exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with ~90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV⁰ a promising defect for quantum network applications.

Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes-namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material-and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.

One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment

Single electron spins coupled to multiple nuclear spins provide promising multi-qubit registers for quantum sensing and quantum networks. The obtainable level of control is determined by how well the electron spin can be selectively coupled to, and decoupled from, the surrounding nuclear spins. Here we realize a coherence time exceeding a second for a single nitrogen-vacancy electron spin through decoupling sequences tailored to its microscopic nuclear-spin environment. First, we use the electron spin to probe the environment, which is accurately described by seven individual and six pairs of coupled carbon-13 spins. We develop initialization, control and readout of the carbon-13 pairs in order to directly reveal their atomic structure. We then exploit this knowledge to store quantum states in the electron spin for over a second by carefully avoiding unwanted interactions. These results provide a proof-of-principle for quantum sensing of complex multi-spin systems and an opportunity for multi-qubit quantum registers with long coherence times.

Controlling the coherence of a diamond spin qubit through its strain environment

The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. For quantum bits in the solid state, decoherence from thermal vibrations of the surrounding lattice can typically only be suppressed by lowering the temperature of operation. Here, we use a nano-electro-mechanical system to mitigate the effect of thermal phonons on a spin qubit - the silicon-vacancy colour centre in diamond - without changing the system temperature. By controlling the strain environment of the colour centre, we tune its electronic levels to probe, control, and eventually suppress the interaction of its spin with the thermal bath. Strain control provides both large tunability of the optical transitions and significantly improved spin coherence. Finally, our findings indicate the possibility to achieve strong coupling between the silicon-vacancy spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.

On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) were fabricated on single crystalline silver plates to contain those of deposited nanodiamonds that are found to feature appropriate single GeV centres. The low-loss plasmonic configuration enabled the 532-nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV centre was incorporated. The remote GeV emitter was thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~six-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, thereby opening new avenues for the implementation of nanoscale functional quantum devices.