Fermiology and Superconductivity of Topological Surface States in PdTe_{2}

Decomposition of methanol activated by surface under-coordinated Pd on layered PdTe2

The reactivity of layered PdTe2 toward methanol (CH3OH) decomposition was promoted by surface under-coordinated Pd (denoted as Pduc) generated by removing surface Te with controlled Ar ion bombardment. Methanol on the Pduc sites at surface Te vacancies decomposed through competing dehydrogenation and C-O bond cleavage processes; approximately 26% of methanol was converted to CHx* and 17% to CHxO* (* denotes adspecies; x = 2 and 3) as major intermediates at 180 K, leading to a reaction probability of >40% and an ultimate gaseous production of molecular hydrogen, formaldehyde, methane and water. The characteristic reactivity arose from both geometric and electronic effects-the hexagonal-lattice positioning and partial oxidation of the Pduc; its comparison with that of PtTe2 surface emphasized the critical role of electronic structures in determining the reactivity and selectivity. Notably, these reaction processes produced scarce C* as the intermediate CHx* was preferentially hydrogenated. Our results suggest that a PdTe2 surface with Pduc at surface Te vacancies can serve as an efficient catalyst toward methanol decomposition and against carbon poisoning.

Metallated carbon nanowires for potential quantum computing applications via substrate proximity

The realization of next-generation quantum computing devices is hindered by the formidable challenge of detecting and manipulating Majorana zero mode (MZM). In this study, we study if MZM exist in metallated carbyne nanowires. Through optimizations of distinct types of metallated carbyne, we have achieved an average magnetic moment surpassing 1μB for the cases of Mo, Tc, and Ru metallated carbyne. where their local moments exceed 2μB. The magnetism of the Ru atom displays periodic variations with increasing carbyne length. associated with a strong average spin-orbital coupling of ∼140meV. When the ferromagnetic Ru metallated carbyne, coupled with a superconducting Ru substrate, could trigger band inversions at the gamma (G) point and M point, where spin-orbital coupling triggers the transition between the band inversion and the Dirac gap. Our findings present an exciting opportunity to realize carbon-based materials capable of hosting MZM.

Two-Dimensional M-Chalcogene Family with Tunable Superconducting, Topological, and Magnetic Properties

An interesting question is whether chalcogen atoms can emulate the role of carbon or boron elements stabilized between two transition metal layers, as observed in MXenes or MBenes. Here, we predict a new family of two-dimensional ternary compounds M4XY2 (where M = Pd, Y, Zr, etc.; X = S, Se, Te; and Y = Cl, Br, I), named M-chalcogene. Through first-principles calculations, we reveal diverse physical properties in these compounds, including superconducting, topological, and magnetic characteristics, where the bilayer transition metals play crucial roles. Moreover, the expected helical edge states and superconducting transition temperatures in Pd4SCl2 can be finely tuned by strains. Additionally, the Ti4SCl2 is predicted to be a topological insulator and shows promise as a gas sensor candidate for certain exotic gases. Our findings expand two-dimensional material families and provide promising platforms for diverse physical phenomena with efficient tunability by external stimuli for various applications.

Chemical Trends of the Bulk and Surface Termination-Dependent Electronic Structure of Metal-Intercalated Transition Metal Dichalcogenides

The addition of metal intercalants into the van der Waals gaps of transition metal dichalcogenides has shown great promise as a method for controlling their functional properties. For example, chiral helimagnetic states, current-induced magnetization switching, and a giant valley-Zeeman effect have all been demonstrated, generating significant renewed interest in this materials family. Here, we present a combined photoemission and density-functional theory study of three such compounds: , , and , to investigate chemical trends of the intercalant species on their bulk and surface electronic structure. Our resonant photoemission measurements indicate increased hybridization with the itinerant NbS2-derived conduction states with increasing atomic number of the intercalant, leading to pronounced mixing of the nominally localized intercalant states at the Fermi level. Using spatially and angle-resolved photoemission spectroscopy, we show how this impacts surface-termination-dependent charge transfers and leads to the formation of new dispersive states of mixed intercalant-Nb character at the Fermi level for the intercalant-terminated surfaces. This provides an explanation for the origin of anomalous states previously reported in this family of compounds and paves the way for tuning the nature of the magnetic interactions in these systems via control of the hybridization of the magnetic ions with the itinerant states.

Highly Efficient Spintronic Terahertz Emitter Utilizing a Large Spin Hall Conductivity of Type-II Dirac Semimetal PtTe2

The remarkable spin-charge interconversion ability of transition metal dichalcogenides (TMDs) makes them promising candidates for spintronic applications. Nevertheless, their potential as spintronic terahertz (THz) emitters (STEs) remains constrained mainly due to their sizable resistivity and low spin Hall conductivity (SHC), which consequently result in modest THz emission. In this work, the TMD PtTe2, a type-II Dirac semimetal is effectively utilized to develop efficient STEs. This high efficiency primarily results from the large SHC of PtTe2, stemming from its low resistivity and significant spin-to-charge conversion efficiency, attributed to surface states and the local Rashba effect in addition to the inverse spin Hall effect. Remarkably, the peak THz emission from PtTe2/Co-STE exceeds that of Pt/Co-STE by ∼15% and is nearly double that of a similarly thick Pt/Co-STE. The efficient THz emission in the PtTe2/Co heterostructure opens new possibilities for utilizing the semimetal TMDs for developing THz emitters.

Experimental Realization of a Three-Dimensional Dirac Semimetal Phase with a Tunable Lifshitz Transition in Au_{2}Pb

Three-dimensional Dirac semimetals are an exotic state of matter that continue to attract increasing attention due to the unique properties of their low-energy excitations. Here, by performing angle-resolved photoemission spectroscopy, we investigate the electronic structure of Au_{2}Pb across a wide temperature range. Our experimental studies on the (111)-cleaved surface unambiguously demonstrate that Au_{2}Pb is a three-dimensional Dirac semimetal characterized by the presence of a bulk Dirac cone projected off-center of the bulk Brillouin zone (BZ), in agreement with our theoretical calculations. Unusually, we observe that the bulk Dirac cone is significantly shifted by more than 0.4 eV to higher binding energies with reducing temperature, eventually going through a Lifshitz transition. The pronounced downward shift is qualitatively reproduced by our calculations indicating that an enhanced orbital overlap upon compression of the lattice, which preserves C_{4} rotational symmetry, is the main driving mechanism for the Lifshitz transition. These findings not only broaden the range of currently known materials exhibiting three-dimensional Dirac phases, but also show a viable mechanism by which it could be possible to switch on and off the contribution of the degeneracy point to electron transport without external doping.

Evidence for unconventional superconductivity and nontrivial topology in PdTe

PdTe is a superconductor with T_c ~ 4.25 K. Recently, evidence for bulk-nodal and surface-nodeless gap features has been reported in PdTe. Here, we investigate the physical properties of PdTe in both the normal and superconducting states via specific heat and magnetic torque measurements and first-principles calculations. Below T_c, the electronic specific heat initially decreases in T³ behavior (1.5 K < T < T_c) then exponentially decays. Using the two-band model, the superconducting specific heat can be well described with two energy gaps: one is 0.372 meV and another 1.93 meV. The calculated bulk band structure consists of two electron bands (α and β) and two hole bands (γ and η) at the Fermi level. Experimental detection of the de Haas-van Alphen (dHvA) oscillations allows us to identify four frequencies (F_α = 65 T, F_β = 658 T, F_γ = 1154 T, and F_η = 1867 T for H // a), consistent with theoretical predictions. Nontrivial α and β bands are further identified via both calculations and the angle dependence of the dHvA oscillations. Our results suggest that PdTe is a candidate for unconventional superconductivity.

Tuning Multiple Landau Quantization in Transition-Metal Dichalcogenide with Strain

Landau quantization associated with the quantized cyclotron motion of electrons under magnetic field provides the effective way to investigate topologically protected quantum states with entangled degrees of freedom and multiple quantum numbers. Here we report the cascade of Landau quantization in a strained type-II Dirac semimetal NiTe₂ with spectroscopic-imaging scanning tunneling microscopy. The uniform-height surfaces exhibit single-sequence Landau levels (LLs) at a magnetic field originating from the quantization of topological surface state (TSS) across the Fermi level. Strikingly, we reveal the multiple sequence of LLs in the strained surface regions where the rotation symmetry is broken. First-principles calculations demonstrate that the multiple LLs attest to the remarkable lifting of the valley degeneracy of TSS by the in-plane uniaxial or shear strains. Our findings pave a pathway to tune multiple degrees of freedom and quantum numbers of TMDs via strain engineering for practical applications such as high-frequency rectifiers, Josephson diode and valleytronics.

Toward Perfect Surfaces of Transition Metal Dichalcogenides with Ion Bombardment and Annealing Treatment

Layered transition metal dichalcogenides (TMDs) are two-dimensional materials exhibiting a variety of unique features with great potential for electronic and optoelectronic applications. The performance of devices fabricated with mono or few-layer TMD materials, nevertheless, is significantly affected by surface defects in the TMD materials. Recent efforts have been focused on delicate control of growth conditions to reduce the defect density, whereas the preparation of a defect-free surface remains challenging. Here, we show a counterintuitive approach to decrease surface defects on layered TMDs: a two-step process including Ar ion bombardment and subsequent annealing. With this approach, the defects, mainly Te vacancies, on the as-cleaved PtTe₂ and PdTe₂ surfaces were decreased by more than 99%, giving a defect density <1.0 × 10¹⁰ cm^-2, which cannot be achieved solely with annealing. We also attempt to propose a mechanism behind the processes.

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe2 Ultrathin Films

The superconductor PdTe₂ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe₂ a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the spectroscopic characterization of ultrathin PdTe₂ films with thickness down to three monolayers (ML). In the 3 ML PdTe₂ film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The observation of isolated surface resonances and gapped topological surface states sheds light on the applications of PdTe₂ quantum films in spintronics and topological quantum computation.

The surface charge induced high activity of oxygen reduction reaction on the PdTe2 bilayer

Developing transition metal dichalcogenides as electrocatalysts has attracted great interest due to their tunable electronic properties and good thermal stabilities. Herein, we propose a PdTe₂ bilayer as a promising electrocatalyst candidate towards the oxygen reduction reaction (ORR), based on extensive investigation of the electronic properties of PdTe₂ thin films as well as atomic-level reaction kinetics at explicit electrode potentials. We verify that under electrochemical reducing conditions, the electron emerging on the electrode surface is directly transferred to O₂ adsorbed on the PdTe₂ bilayer, which greatly reduces the dissociation barrier of O₂, and thereby facilitates the ORR to proceed via a dissociative pathway. Moreover, the barriers of the electrochemical steps in this pathway are all found to be less than 0.1 eV at the ORR limiting potential, demonstrating fast ORR kinetics at ambient conditions. This unique mechanism offers excellent energy efficiency and four-electron selectivity for the PdTe₂ bilayer, and it is identified as a promising candidate for fuel cell applications.

Coexistence of Bulk-Nodal and Surface-Nodeless Cooper Pairings in a Superconducting Dirac Semimetal

The interplay of nontrivial topology and superconductivity in condensed matter physics gives rise to exotic phenomena. However, materials are extremely rare where it is possible to explore the full details of the superconducting pairing. Here, we investigate the momentum dependence of the superconducting gap distribution in a novel Dirac material PdTe. Using high resolution, low temperature photoemission spectroscopy, we establish it as a spin-orbit coupled Dirac semimetal with the topological Fermi arc crossing the Fermi level on the (010) surface. This spin-textured surface state exhibits a fully gapped superconducting Cooper pairing structure below T_{c}∼4.5  K. Moreover, we find a node in the bulk near the Brillouin zone boundary, away from the topological Fermi arc. These observations not only demonstrate the band resolved electronic correlation between topological Fermi arc states and the way it induces Cooper pairing in PdTe, but also provide a rare case where surface and bulk states host a coexistence of nodeless and nodal gap structures enforced by spin-orbit coupling.

Ultrasensitive Self-Driven Terahertz Photodetectors Based on Low-Energy Type-II Dirac Fermions and Related Van der Waals Heterojunctions

The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W^-1 , with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz^-0.5 , with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.

Excitonic Insulator Enabled Ultrasensitive Terahertz Photodetection with Efficient Low-Energy Photon Harvesting

Despite the interest toward the terahertz (THz) rapidly increasing, the high-efficient detection of THz photon is not widely available due to the low photoelectric conversion efficiency at this low-energy photon regime. Excitonic insulator (EI) states in emerging materials with anomalous optical transitions and renormalized valence band dispersions render their nontrivial photoresponse, which offers the prospect of harnessing the novel EI properties for the THz detection. Here, an EI-based photodetector is developed for efficient photoelectric conversion in the THz band. High-quality EI material Ta₂ NiSe₅ is synthesized and the existence of the EI state at room temperature is confirmed. The THz scanning near-field optical microscopy experimentally reveals the strong light-matter interaction in the THz band of EI state in the Ta₂ NiSe₅ . Benefiting from the strong light-matter interaction, the Ta₂ NiSe₅ -based photodetectors exhibit superior THz detection performances with a detection sensitivity of ≈42 pW Hz^-1/2 and a response time of ≈1.1 µs at 0.1 THz at room temperature. This study provides a new avenue for realizing novel high-performance THz photodetectors by exploiting the emerging EI materials.

Probing the topological surface states in superconducting Sn4Au single crystal: a magneto transport study

Materials exhibiting bulk superconductivity along with magnetoresistance (MR) in their normal state have emerged as suitable candidates for topological superconductivity. In this article, we report a flux free method to synthesize single crystal of topological superconductor candidate Sn₄Au. The phase purity and single crystalline nature are confirmed through various characterizations viz. x-ray diffraction, field emission scanning electron microscopy, selected area electron diffraction, and transmission electron microscopy. Chemical states of the constituent element viz. Sn and Au are analysed through x-ray photoelectron spectroscopy. Superconductivity in synthesized Sn₄Au single crystal is evident formρ-Tplot, for which the critical field (H_c) is determined throughρ-Hplot at 2 K i.e. just below critical temperatureT_c. A positive MR is observed inρ-Hmeasurements at different temperatures aboveT_c, viz. at 3 K, 5 K, 10 K and 20 K. Further, the magnetoconductivity (MC) is analysed by using Hikami-Larkin-Nagaoka formalism, which signifies the presence of weak antilocalization (WAL) effect in Sn₄Au. Angle dependent magneto-transport measurement has been performed to detect the origin of observed WAL effect in Sn₄Au single crystal. Normalized MC vsHcosθplot shows presence of topological surface states in the studied system. It is evident that Sn₄Au is a 2.6 K topological superconductor.

Controlling Spin-Orbit Coupling to Tailor Type-II Dirac Bands

NiTe₂, a type-II Dirac semimetal with a strongly tilted Dirac band, has been explored extensively to understand its intriguing topological properties. Here, using density functional theory calculations, we report that the strength of the spin-orbit coupling (SOC) in NiTe₂ can be tuned by Se substitution. This results in negative shifts of the bulk Dirac point (BDP) while preserving the type-II Dirac band. Indeed, combined studies using scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy confirm that the BDP in the NiTe_2-xSe_x alloy moves from +0.1 eV (NiTe₂) to -0.3 eV (NiTeSe) depending on the Se concentrations, indicating the effective tunability of type-II Dirac Fermions. Our results demonstrate an approach to tailor the type-II Dirac band in NiTe₂ by controlling the SOC strength via chalcogen substitution. This approach can be applicable to different types of topological materials.

Hidden spin-orbital texture at the Γ ¯ -located valence band maximum of a transition metal dichalcogenide semiconductor

Finding stimuli capable of driving an imbalance of spin-polarised electrons within a solid is the central challenge in the development of spintronic devices. However, without the aid of magnetism, routes towards this goal are highly constrained with only a few suitable pairings of compounds and driving mechanisms found to date. Here, through spin- and angle-resolved photoemission along with density functional theory, we establish how the p-derived bulk valence bands of semiconducting 1T-HfSe2 possess a local, ground-state spin texture spatially confined within each Se-sublayer due to strong sublayer-localised electric dipoles orientated along the c-axis. This hidden spin-polarisation manifests in a 'coupled spin-orbital texture' with in-equivalent contributions from the constituent p-orbitals. While the overall spin-orbital texture for each Se sublayer is in strict adherence to time-reversal symmetry (TRS), spin-orbital mixing terms with net polarisations at time-reversal invariant momenta are locally maintained. These apparent TRS-breaking contributions dominate, and can be selectively tuned between with a choice of linear light polarisation, facilitating the observation of pronounced spin-polarisations at the Brillouin zone centre for all kz. We discuss the implications for the generation of spin-polarised populations from 1T-structured transition metal dichalcogenides using a fixed energy, linearly polarised light source.

Quantum spin Hall effect in tilted penta silicene and its isoelectronic substitutions

Silicene, a competitive two-dimensional (2D) material for future electronic devices, has attracted intensive attention in condensed matter physics. Utilizing an adaptive genetic algorithm (AGA), we identify a topological allotrope of silicene, named tilted penta (tPenta) silicene. Based on first-principles calculations, the geometric and electronic properties of tPenta silicene and its isoelectronic substitutions (Ge, Sn) are investigated. Our results indicate that tPenta silicene exhibits a semimetallic state with distorted Dirac cones in the absence of spin-orbit coupling (SOC). When SOC is considered, it shows semiconducting behavior with a gap opening of 2.4 meV at the Dirac point. Based on the results of invariant ( = 1) and the helical edge states, we demonstrate that tPenta silicene is a topological insulator. Furthermore, the effect of isoelectronic substitutions on tPenta silicene is studied. Two stoichiometric phases, i.e., tPenta Si_0.333Ge_0.667 and tPenta Si_0.333Sn_0.667 are found to retain the geometric framework of tPenta silicene and exhibit high stabilities. Our calculations show that both tPenta Si_0.333Ge_0.667 and tPenta Si_0.333Sn_0.667 are QSH insulators with enlarged band gaps of 32.5 meV and 94.3 meV, respectively, at the HSE06 level, offering great potential for practical applications at room temperature.

Protonation enhanced superconductivity in PdTe2

Electrochemical ionic liquid gating is an effective way to intercalate ions into layered materials and modulate the properties. Here we report an enhanced superconductivity in a topological superconductor candidate PdTe₂through electrochemical gating procedure. The superconducting transition temperature was increased to approximately 3.2 K by ionic gating induced protonation at room temperature. Moreover, a further enhanced superconductivity of both superconducting transition temperature and superconducting volume fraction was observed after the gated samples were placed in a glove box for 2 months. This may be caused by the diffusion of protons in the gated single crystals, which is rarely reported in electrochemical ionic liquid gating experiments. Our results further the superconducting study of PdTe₂and may reveal a common phenomenon in the electrochemical gating procedure.

Proximity-Effect-Induced Anisotropic Superconductivity in a Monolayer Ni-Pb Binary Alloy

A proximity effect facilitates the penetration of Cooper pairs that permits superconductivity in a normal metal, offering a promising approach to turn heterogeneous materials into superconductors and develop exceptional quantum phenomena. Here, we have systematically investigated proximity-induced anisotropic superconductivity in a monolayer Ni-Pb binary alloy by combining scanning tunneling microscopy/spectroscopy (STM/STS) with theoretical calculations. By means of high-temperature growth, the ( 3 3 × 3 3 ) R 30 o Ni-Pb surface alloy has been fabricated on Pb(111) and the appearance of a domain boundary as well as a structural phase transition can be deduced from a half-unit-cell lattice displacement. Given the high spatial and energy resolution, tunneling conductance (dI/dU) spectra have resolved the reduced but anisotropic superconducting gap ΔNiPb ≈ 1.0 meV, in stark contrast to the isotropic ΔPb ≈ 1.3 meV. In addition, the higher density of states at the Fermi energy (D(EF)) of the Ni-Pb surface alloy results in an enhancement of coherence peak height. According to the same Tc ≈ 7.1 K with Pb(111) from the temperature-dependent ΔNiPb and the short decay length Ld ≈ 3.55 nm from the spatially monotonic decrease of ΔNiPb, both results are supportive of a proximity-induced superconductivity. Despite a lack of a bulk counterpart, the atomically thick Ni-Pb bimetallic compound opens a pathway to engineer superconducting properties down to the two-dimensional limit, giving rise to the emergence of anisotropic superconductivity via a proximity effect.

Fermi surface chirality induced in a TaSe2 monosheet formed by a Ta/Bi2Se3 interface reaction

Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi₂Se₃ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe₂ grown by a method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe₂-like TL is reduced from D_3h to C_3v resulting from a vertical atomic shift of the tantalum atom. Spin- and momentum-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a route to realize chiral two-dimensional electron systems via interface engineering in van der Waals epitaxy that do not exist in the corresponding bulk materials.

Current limitations of spintronics devices based on bulk topological materials stimulate the search for new materials and structures with interesting spin properties. Here the authors report a chiral spin texture around the Fermi level related to structural symmetry breaking in a TaSe₂ layer grown on a Bi2Se3 surface.

Detailed magneto heat capacity analysis of SnAs topological superconductor

In this article, we report magneto heat capacity analysis of superconducting SnAs. Magneto heat capacity analysis of superconductors is an important tool to determine bulk superconductivity as well as the pairing mechanism of Cooper pairs. SnAs crystal is characterized through x-ray diffraction and x-ray photoelectron spectroscopy. Magneto transport measurements of studied SnAs superconductor evidenced presence of superconductivity at around 4 K, which persists up to an applied field of 250 Oe. The bulk nature of superconductivity is determined through AC susceptibility (χ) along with the heat capacity measurements. Magneto heat capacity measurements show SnAs to be a fully gapped s wave superconductor. This finding is well supported by calculated physical parameters likeα(3.36),λ_e-ph(0.70) and ΔC_el/γT_c(1.41). Calculation of residual Sommerfeld coefficient (γ_res) at different fields, confirms node-less superconductivity in SnAs.

Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting

Despite the considerable effort, fast and highly sensitive photodetection is not widely available at the low-photon-energy range (~meV) of the electromagnetic spectrum, owing to the challenging light funneling into small active areas with efficient conversion into an electrical signal. Here, we provide an alternative strategy by efficiently integrating and manipulating at the nanoscale the optoelectronic properties of topological Dirac semimetal PtSe₂ and its van der Waals heterostructures. Explicitly, we realize strong plasmonic antenna coupling to semimetal states near the skin-depth regime (λ/10⁴), featuring colossal photoresponse by in-plane symmetry breaking. The observed spontaneous and polarization-sensitive photocurrent are correlated to strong coupling with the nonequilibrium states in PtSe₂ Dirac semimetal, yielding efficient light absorption in the photon range below 1.24 meV with responsivity exceeding ∼0.2 A/W and noise-equivalent power (NEP) less than ~38 pW/Hz^0.5, as well as superb ambient stability. Present results pave the way to efficient engineering of a topological semimetal for high-speed and low-energy photon harvesting in areas such as biomedical imaging, remote sensing or security applications.

Josephson diode effect from Cooper pair momentum in a topological semimetal

Cooper pairs in non-centrosymmetric superconductors can acquire finite centre-of-mass momentum in the presence of an external magnetic field. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not in the opposite one. Here we report the discovery of a giant Josephson diode effect in Josephson junctions formed from a type-II Dirac semimetal, NiTe₂. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover, the asymmetry changes sign several times with an increasing field. These characteristic features are accounted for by a model based on finite-momentum Cooper pairing that largely originates from the Zeeman shift of spin-helical topological surface states. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to build novel superconducting computing devices using the Josephson diode effect.

Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3

Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires preparation of materials with various compositions. Thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy and spin- and angle-resolved photoemission spectroscopy to visualize the strain-driven band-structure evolution of the quasi-one-dimensional superconductor TaSe₃. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-one-dimensional topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-one-dimensional superconductor TaSe₃ provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for a spin current that is robust against impurity scattering.

A millikelvin scanning tunneling microscope in ultra-high vacuum with adiabatic demagnetization refrigeration

We present the design and performance of an ultra-high vacuum scanning tunneling microscope (STM) that uses adiabatic demagnetization of electron magnetic moments for controlling its operating temperature ranging between 30 mK and 1 K with an accuracy of up to 7 μK rms. At the same time, high magnetic fields of up to 8 T can be applied perpendicular to the sample surface. The time available for STM experiments at 50 mK is longer than 20 h, at 100 mK about 40 h. The single-shot adiabatic demagnetization refrigerator can be regenerated automatically within 7 h while keeping the STM temperature below 5 K. The whole setup is located in a vibrationally isolated, electromagnetically shielded laboratory with no mechanical pumping lines penetrating its isolation walls. The 1 K pot of the adiabatic demagnetization refrigeration cryostat can be operated silently for more than 20 days in a single-shot mode using a custom-built high-capacity cryopump. A high degree of vibrational decoupling together with the use of a specially designed minimalistic STM head provides outstanding mechanical stability, demonstrated by the tunneling current noise, STM imaging, and scanning tunneling spectroscopy measurements, all performed on an atomically clean Al(100) surface.

Electronic and topological properties of group-10 transition metal dichalcogenides

The group 10 transition metal dichalcogenides (TMDs) (MX ₂: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal-insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron-electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.

Angle, Spin, and Depth Resolved Photoelectron Spectroscopy on Quantum Materials

The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal "hidden" spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.

Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

Emergent topological Dirac semimetals afford fresh pathways for optoelectronics, although device implementation has been elusive to date. Specifically, palladium ditelluride (PdTe₂) combines the capabilities provided by its peculiar band structure, with topologically protected electronic states, with advantages related to the occurrence of high-mobility charge carriers and ambient stability. Here, we demonstrate large photogalvanic effects with high anisotropy at terahertz frequency in PdTe₂-based devices. A responsivity of 10 A/W and a noise-equivalent power lower than 2 pW/Hz^0.5 are achieved at room temperature, validating the suitability of PdTe₂-based devices for applications in photosensing, polarization-sensitive detection, and large-area fast imaging. Our findings open opportunities for exploring uncooled and sensitive photoelectronic devices based on topological semimetals, especially in the highly pursuit terahertz band.

Fermi-crossing Type-II Dirac fermions and topological surface states in NiTe2

Transition-metal dichalcogenides (TMDs) offer an ideal platform to experimentally realize Dirac fermions. However, typically these exotic quasiparticles are located far away from the Fermi level, limiting the contribution of Dirac-like carriers to the transport properties. Here we show that NiTe₂ hosts both bulk Type-II Dirac points and topological surface states. The underlying mechanism is shared with other TMDs and based on the generic topological character of the Te p-orbital manifold. However, unique to NiTe₂, a significant contribution of Ni d orbital states shifts the energy of the Type-II Dirac point close to the Fermi level. In addition, one of the topological surface states intersects the Fermi energy and exhibits a remarkably large spin splitting of 120 meV. Our results establish NiTe₂ as an exciting candidate for next-generation spintronics devices.

Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides

Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.

The superconductivity and topological surface state of type-II Dirac semimetal NiTe2

NiTe₂ is a type-II Dirac semimetal with the Dirac point very close to the Fermi level. In this paper, its electronic structure, phonon structure and electron-phonon interaction are studied via first-principles calculations. The noteworthy result is that the nontrival bands around the type-II Dirac point are strongly coupled with phonon modes, suggesting that they play an important role in superconductivity. Furthermore, the topological surface states on the (0 0 1) cleavage plane originated from the nontrivial Z ₂ are well separated from the bulk states and can be tuned to approach the Fermi level by adding holes or by V substitution. The possible topological superconductivity in type-II Dirac semimetal NiTe₂ is discussed.

High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2

Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities. Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe₂ , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe₂ thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe₂ layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe₂ -like TMDs for wafer-scale spintronic device applications.

Enhanced, homogeneously type-II superconductivity in Cu-intercalated PdTe2

Though the superconducting phase of the type-II Dirac semimetal PdTe₂ was shown to be conventional in nature, the phase continued to be interesting in terms of its magnetic properties. While certain experiments indicated an unexpected type-I superconducting phase, other experiments revealed formation of vortices under the application of magnetic fields. Recently, scanning tunneling spectroscopy (STS) experiments revealed the existence of a mixed phase where type-I and type-II behaviours coexist. Here, based on our temperature and magnetic field dependent STS experiments on Cu-intercalated PdTe₂, we show that as the critical temperature of the superconducting phase goes up from 1.7 K to 2.4 K on Cu-intercalation, the mixed phase disappears and the system becomes homogeneously type-II. This may be attributed to an averaging effect caused by quasiparticle exchange between type-I and type-II domains mediated by the Cu atoms and to decreased coherence length due to increased disorder.

Superconductivity under pressure in the Dirac semimetal PdTe2

The Dirac semimetal PdTe₂ was recently reported to be a type-I superconductor (T _c   =  1.64 K, [Formula: see text] mT) with unusual superconductivity of the surface sheath. We here report a high-pressure study, [Formula: see text] GPa, of the superconducting phase diagram extracted from ac-susceptibility and transport measurements on single crystalline samples. T _c (p ) shows a pronounced non-monotonous variation with a maximum T _c   =  1.91 K around 0.91 GPa, followed by a gradual decrease to 1.27 K at 2.5 GPa. Surface superconductivity is robust under pressure as demonstrated by the large superconducting screening signal that persists for applied dc-fields [Formula: see text]. Surprisingly, for [Formula: see text] GPa the superconducting transition temperature at the surface [Formula: see text] is larger than T _c of the bulk. Therefore surface superconductivity may possibly have a non-trivial topological nature. We compare the measured pressure variation of T _c with recent results from band structure calculations and discuss the importance of a Van Hove singularity.

Mixed type I and type II superconductivity due to intrinsic electronic inhomogeneities in the type II Dirac semimetal PdTe2

The type II Dirac semimetal PdTe[Formula: see text] is unique in the family of topological parent materials because it displays a superconducting ground state below 1.7 K. Despite wide speculation on the possibility of an unconventional topological superconducting phase, tunneling and heat capacity measurements revealed that the superconducting phase of PdTe[Formula: see text] follows predictions of the microscopic theory of Bardeen, Cooper and Schrieffer for conventional superconductors. The superconducting phase in PdTe[Formula: see text] is further interesting because it also displays properties that are characteristic of type-I superconductors and are generally unexpected for binary compounds. Here, from scanning tunneling spectroscopic measurements we show that the surface of PdTe[Formula: see text] displays intrinsic electronic inhomogeneities in the normal state which leads to a mixed type I and type II superconducting behaviour along with a spatial distribution of critical fields in the superconducting state. Understanding of the origin of such inhomogeneities may be important for understanding the topological properties of PdTe[Formula: see text] in the normal state.

Penetration depth study of the type-I superconductor PdTe2

Superconductivity in the topological non-trivial Dirac semimetal PdTe₂ was recently shown to be type-I. We hereby report measurements of the relative magnetic penetration depth, [Formula: see text], on several single crystals using a high precision tunnel diode oscillator technique. The temperature variation [Formula: see text] follows an exponential function for [Formula: see text], consistent with a fully-gapped superconducting state and weak or moderately coupling superconductivity. By fitting the data we extract a [Formula: see text]-value of  ∼500 nm. The normalized superfluid density is in good agreement with the computed curve for a type-I superconductor with nonlocal electrodynamics. Small steps are observed in [Formula: see text], which possibly relates to a locally lower [Formula: see text] due to defects in the single crystalline sample.