Transform-Limited Photons From a Coherent Tin-Vacancy Spin in Diamond

Nonlinear Quantum Photonics with a Tin-Vacancy Center Coupled to a One-Dimensional Diamond Waveguide

Color centers integrated with nanophotonic devices have emerged as a compelling platform for quantum science and technology. Here, we integrate tin-vacancy centers in a diamond waveguide and investigate the interaction with light at the single-photon level in both reflection and transmission. We observe single-emitter-induced extinction of the transmitted light up to 25% and measure the nonlinear effect on the photon statistics. Furthermore, we demonstrate fully tunable interference between the reflected single-photon field and laser light backscattered at the fiber end and show the corresponding controlled change between bunched and antibunched photon statistics in the reflected field.

Toward Programmable Quantum Processors Based on Spin Qubits with Mechanically Mediated Interactions and Transport

Solid-state spin qubits are promising candidates for quantum information processing, but controlled interactions and entanglement in large, multiqubit systems are currently difficult to achieve. We describe a method for programmable control of multiqubit spin systems, in which individual nitrogen-vacancy (NV) centers in diamond nanopillars are coupled to magnetically functionalized silicon nitride mechanical resonators in a scanning probe configuration. Qubits can be entangled via interactions with nanomechanical resonators while programmable connectivity is realized via mechanical transport of qubits in nanopillars. To demonstrate the feasibility of this approach, we characterize both the mechanical properties and the magnetic field gradients around the micromagnet placed on the nanobeam resonator. We demonstrate coherent manipulation of a spin qubit in the proximity of a transported micromagnet by utilizing nuclear spin memory and use the NV center to detect the time-varying magnetic field from the oscillating micromagnet, extracting a spin-mechanical coupling of 7.7(9) Hz. With realistic improvements, the high-cooperativity regime can be reached, offering a new avenue toward scalable quantum information processing with spin qubits.

Heterogeneous integration of spin-photon interfaces with a CMOS platform

Colour centres in diamond have emerged as a leading solid-state platform for advancing quantum technologies, satisfying the DiVincenzo criteria1 and recently achieving quantum advantage in secret key distribution2. Blueprint studies3-5 indicate that general-purpose quantum computing using local quantum communication networks will require millions of physical qubits to encode thousands of logical qubits, presenting an open scalability challenge. Here we introduce a modular quantum system-on-chip (QSoC) architecture that integrates thousands of individually addressable tin-vacancy spin qubits in two-dimensional arrays of quantum microchiplets into an application-specific integrated circuit designed for cryogenic control. We demonstrate crucial fabrication steps and architectural subcomponents, including QSoC transfer by means of a 'lock-and-release' method for large-scale heterogeneous integration, high-throughput spin-qubit calibration and spectral tuning, and efficient spin state preparation and measurement. This QSoC architecture supports full connectivity for quantum memory arrays by spectral tuning across spin-photon frequency channels. Design studies building on these measurements indicate further scaling potential by means of increased qubit density, larger QSoC active regions and optical networking across QSoC modules.

Synchronized source of indistinguishable photons for quantum networks

We present a source of indistinguishable photons at telecom wavelength, synchronized to an external clock, for the use in distributed quantum networks. We characterize the indistinguishability of photons generated in independent parametric down-conversion events using a Hong-Ou-Mandel interferometer, and show non-classical interference with coalescence, C = 0.83(5). We also demonstrate the synchronization to an external clock within sub-picosecond timing jitter, which is significantly shorter than the single-photon wavepacket duration of ≈ 35 ps. Our source enables scalable quantum protocols over multi-node, long-distance optical networks using network-based clock recovery systems.

Closed-loop electron-beam-induced spectroscopy and nanofabrication around individual quantum emitters

Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with a width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron-emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando cathodoluminescence measurement and fabrication around single photon emitters demonstrated here provide a new foundation for the potential control of emitter-cavity interactions in integrated quantum photonics.

Nanodiamonds: A Cutting-Edge Approach to Enhancing Biomedical Therapies and Diagnostics in Biosensing

Nanodiamonds (NDs) have garnered attention in the field of nanomedicine due to their unique properties. This review offers a comprehensive overview of NDs synthesis methods, properties, and their uses in biomedical applications. Various synthesis techniques, such as detonation, high-pressure, high-temperature, and chemical vapor deposition, offer distinct advantages in tailoring NDs' size, shape, and surface properties. Surface modification methods further enhance NDs' biocompatibility and enable the attachment of bioactive molecules, expanding their applicability in biological systems. NDs serve as promising nanocarriers for drug delivery, showcasing biocompatibility and the ability to encapsulate therapeutic agents for targeted delivery. Additionally, NDs demonstrate potential in cancer treatment through hyperthermic therapy and vaccine enhancement for improved immune responses. Functionalization of NDs facilitates their utilization in biosensors for sensitive biomolecule detection, aiding in precise diagnostics and rapid detection of infectious diseases. This review underscores the multifaceted role of NDs in advancing biomedical applications. By synthesizing NDs through various methods and modifying their surfaces, researchers can tailor their properties for specific biomedical needs. The ability of NDs to serve as efficient drug delivery vehicles holds promise for targeted therapy, while their applications in hyperthermic therapy and vaccine enhancement offer innovative approaches to cancer treatment and immunization. Furthermore, the integration of NDs into biosensors enhances diagnostic capabilities, enabling rapid and sensitive detection of biomolecules and infectious diseases. Overall, the diverse functionalities of NDs underscore their potential as valuable tools in nanomedicine, paving the way for advancements in healthcare and biotechnology.

Alignment-free coupling to arrays of diamond microdisk cavities with fabrication tolerant spin-photon interfaces

We propose a design for an efficient spin-photon interface to a color center in a diamond microdisk. The design consists of a silicon oxynitride triangular lattice overlaid on a diamond microdisk without any aligmnent between the layers. This enables vertical emission from the microdisk into low-numerical aperture modes, with quantum efficiencies as high as 46% for a tin vacancy (SnV) center. Our design is robust to manufacturing errors, potentially enabling large scale fabrication of quantum emitters coupled to optical collection modes. We also introduce a novel approach for optimizing the free space performance of our device using a dipole model, achieving comparable results to full-wave finite difference time domain simulations with 7 · 106 reduction in computational time.

Hyperfine Spectroscopy and Fast, All-Optical Arbitrary State Initialization and Readout of a Single, Ten-Level ^{73}Ge Vacancy Nuclear Spin Qudit in Diamond

A high-spin nucleus coupled to a color center can act as a long-lived memory qudit in a spin-photon interface. The germanium vacancy (GeV) in diamond has attracted recent attention due to its excellent spectral properties and provides access to the ten-dimensional Hilbert space of the I=9/2 ^{73}Ge nucleus. Here, we observe the ^{73}GeV  hyperfine structure, perform nuclear spin readout, and optically initialize the ^{73}Ge spin into any eigenstate on a μs timescale and with a fidelity of up to ∼84%. Our results establish ^{73}GeV as an optically addressable high-spin quantum platform for a high-efficiency spin-photon interface as well as for foundational quantum physics and metrology.

Nanoelectromechanical Control of Spin-Photon Interfaces in a Hybrid Quantum System on Chip

Color centers (CCs) in nanostructured diamond are promising for optically linked quantum technologies. Scaling to useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of spin-dependent optical transitions; C3 coherent spin control; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. Here, we introduce an architecture that simultaneously achieves C1-C6. We realize piezoelectric strain control of diamond waveguide-coupled tin vacancy centers with ultralow power dissipation necessary. The DC response of our device allows emitter transition tuning by over 20 GHz, combined with low-power AC control. We show acoustic spin resonance of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing, our work opens a path to scalable single-qubit control with optically mediated entangling gates.

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1-1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

A special issue preface: diamond for quantum applications

This special issue discusses current progress in the utilization of defect centres in diamond as spin-photon interfaces for quantum applications. This issue is based on the discussions of the Theo Murphy meeting 'Diamond for quantum applications' which covered the recent progress of diamond growth and engineering for the creation and optimization of colour centres, toward the integration of diamond-based qubits in quantum systems. This article is part of the Theo Murphy meeting issue 'Diamond for quantum applications'.

Large-scale optical characterization of solid-state quantum emitters

Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. Here we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of colour centres. We first demonstrate the ability to track colour centres by registering them to a fabricated machine-readable global coordinate system, enabling a systematic comparison of the same colour centre sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of colour centres and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable the accelerated identification of useful quantum emitters at chip scale, enabling advances in scaling up colour centre platforms for quantum information applications, materials science and device design and characterization.

Layered materials as a platform for quantum technologies

Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.

Quantum Interference between Fundamentally Different Processes Is Enabled by Shaped Input Wavefunctions

This work presents a general framework for quantum interference between processes that can involve different fundamental particles or quasi-particles. This framework shows that shaping input wavefunctions is a versatile and powerful tool for producing and controlling quantum interference between distinguishable pathways, beyond previously explored quantum interference between indistinguishable pathways. Two examples of quantum interference enabled by shaping in interactions between free electrons, bound electrons, and photons are presented: i) the vanishing of the zero-loss peak by destructive quantum interference when a shaped electron wavepacket couples to light, under conditions where the electron's zero-loss peak otherwise dominates; ii) quantum interference between free electron and atomic (bound electron) spontaneous emission processes, which can be significant even when the free electron and atom are far apart, breaking the common notion that a free electron and an atom must be close by to significantly affect each other's processes. Conclusions show that emerging quantum wave-shaping techniques unlock the door to greater versatility in light-matter interactions and other quantum processes in general.

Photonic Indistinguishability of the Tin-Vacancy Center in Nanostructured Diamond

Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with 99.7_{-2.5}^{+0.3}% purity and 63(9)% indistinguishability from a resonantly excited tin-vacancy center in a single-mode waveguide. We obtain quantum control of the optical transition with 1.71(1)-ns-long π pulses of 77.1(8)% fidelity and show it is spectrally stable over 100 ms. A modest Purcell enhancement factor of 12 would enhance the indistinguishability to 95%.

Qubit teleportation between non-neighbouring nodes in a quantum network

Future quantum internet applications will derive their power from the ability to share quantum information across the network^1,2. Quantum teleportation allows for the reliable transfer of quantum information between distant nodes, even in the presence of highly lossy network connections³. Although many experimental demonstrations have been performed on different quantum network platforms^4-10, moving beyond directly connected nodes has, so far, been hindered by the demanding requirements on the pre-shared remote entanglement, joint qubit readout and coherence times. Here we realize quantum teleportation between remote, non-neighbouring nodes in a quantum network. The network uses three optically connected nodes based on solid-state spin qubits. The teleporter is prepared by establishing remote entanglement on the two links, followed by entanglement swapping on the middle node and storage in a memory qubit. We demonstrate that, once successful preparation of the teleporter is heralded, arbitrary qubit states can be teleported with fidelity above the classical bound, even with unit efficiency. These results are enabled by key innovations in the qubit readout procedure, active memory qubit protection during entanglement generation and tailored heralding that reduces remote entanglement infidelities. Our work demonstrates a prime building block for future quantum networks and opens the door to exploring teleportation-based multi-node protocols and applications^2,11-13.

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury-Brown-Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond

Quantum emitters in diamond are leading optically accessible solid-state qubits. Among these, Group IV-vacancy defect centers have attracted great interest as coherent and stable optical interfaces to long-lived spin states. Theory indicates that their inversion symmetry provides first-order insensitivity to stray electric fields, a common limitation for optical coherence in any host material. Here we experimentally quantify this electric field dependence via an external electric field applied to individual tin-vacancy (SnV) centers in diamond. These measurements reveal that the permanent electric dipole moment and polarizability are at least 4 orders of magnitude smaller than for the diamond nitrogen vacancy (NV) centers, representing the first direct measurement of the inversion symmetry protection of a Group IV defect in diamond. Moreover, we show that by modulating the electric-field-induced dipole we can use the SnV as a nanoscale probe of local electric field noise, and we employ this technique to highlight the effect of spectral diffusion on the SnV.

Quantum Entanglement and Modulation Enhancement of Free-Electron-Bound-Electron Interaction

The modulation and engineering of the free-electron wave function bring new ingredients to the electron-matter interaction. We consider the dynamics of a free-electron passing by a two-level system fully quantum mechanically and study the enhancement of interaction from the modulation of the free-electron wave function. In the presence of resonant modulation of the free-electron wave function, we show that the electron energy loss and gain spectrum is greatly enhanced for a coherent initial state of the two-level system. Thus, a modulated electron can function as a probe of the atomic coherence. We further find that distantly separated two-level atoms can be entangled through interacting with the same free electron. Effects of modulation-induced enhancement can also be observed using a dilute beam of modulated electrons.

Field-based design of a resonant dielectric antenna for coherent spin-photon interfaces

We propose a field-based design for dielectric antennas to interface diamond color centers in dielectric membranes with a Gaussian propagating far field. This antenna design enables an efficient spin-photon interface with a Purcell factor exceeding 400 and a 93% mode overlap to a 0.4 numerical aperture far-field Gaussian mode. The antenna design with the back reflector is robust to fabrication imperfections, such as variations in the dimensions of the dielectric perturbations and the emitter dipole location. The field-based dielectric antenna design provides an efficient free-space interface for closely packed arrays of quantum memories for multiplexed quantum repeaters, arrayed quantum sensors, and modular quantum computers.

Realization of a multinode quantum network of remote solid-state qubits

The distribution of entangled states across the nodes of a future quantum internet will unlock fundamentally new technologies. Here, we report on the realization of a three-node entanglement-based quantum network. We combine remote quantum nodes based on diamond communication qubits into a scalable phase-stabilized architecture, supplemented with a robust memory qubit and local quantum logic. In addition, we achieve real-time communication and feed-forward gate operations across the network. We demonstrate two quantum network protocols without postselection: the distribution of genuine multipartite entangled states across the three nodes and entanglement swapping through an intermediary node. Our work establishes a key platform for exploring, testing, and developing multinode quantum network protocols and a quantum network control stack.

Quantum Information and Algorithms for Correlated Quantum Matter

Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.

Versatile direct-writing of dopants in a solid state host through recoil implantation

Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe⁺ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices.

Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond

We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using β^{-} emission channeling following low fluence ^{121}Sn implantation (2×10^{12}  atoms/cm^{2}, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. Our data show that the split-vacancy configuration is formed immediately upon implantation with a surprisingly high efficiency of ≈40%. Upon thermal annealing at 920 °C ≈30% of Sn is found in the ideal bond-center position. Photoluminescence revealed the characteristic SnV^{-} line at 621 nm, with an extraordinarily narrow ensemble linewidth (2.3 nm) of near-perfect Lorentzian shape. These findings further establish the SnV^{-} center as a promising candidate for single photon emission applications, since, in addition to exceptional optical properties, it also shows a remarkably simple structural formation mechanism.

Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition

Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the system’s intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the system’s spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.

Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV^-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV^- centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.