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Xu S, Wang X, Bellaiche L, Xu B. Electric Control of Magnetism in Multiferroic Rare-Earth-Substituted BiFeO_{3} with Ferrielectricity. PHYSICAL REVIEW LETTERS 2024; 133:046801. [PMID: 39121429 DOI: 10.1103/physrevlett.133.046801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 04/23/2024] [Accepted: 06/05/2024] [Indexed: 08/11/2024]
Abstract
The multiferroic rare-earth-substituted BiFeO_{3} has emerged as a promising candidate to achieve ultralow-energy-dissipation logic or memory devices, but the fundamental details of the switching mechanism involving the electrical, structural, and magnetic degrees of freedom is not fully understood, in particular, in its single-phase form. Here, a first-principles-based computational scheme is used to study Nd-doped BiFeO_{3} as a model system. The structure that yields a reduced P-E hysteresis loop is found to be ferrielectric with modulated octahedral tiltings, and it is shown that both the in-plane and out-of-plane ferromagnetization can be controlled by an applied electric field. The switching behaviors can be well interpreted by a Landau-type model, in which the magnetoelectric coupling is indirect and mediated by octahedral tiltings. The effects of varied composition and temperature are further discussed, revealing important correlations between the polarization switching and the robustness of the control of magnetization.
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Affiliation(s)
- Shiji Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - Xin Wang
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - L Bellaiche
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Bin Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
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2
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Husain S, Harris I, Meisenheimer P, Mantri S, Li X, Ramesh M, Behera P, Taghinejad H, Kim J, Kavle P, Zhou S, Kim TY, Zhang H, Stevenson P, Analytis JG, Schlom D, Salahuddin S, Íñiguez-González J, Xu B, Martin LW, Caretta L, Han Y, Bellaiche L, Yao Z, Ramesh R. Non-volatile magnon transport in a single domain multiferroic. Nat Commun 2024; 15:5966. [PMID: 39013862 PMCID: PMC11252442 DOI: 10.1038/s41467-024-50180-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Accepted: 07/02/2024] [Indexed: 07/18/2024] Open
Abstract
Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO3 the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum (La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understanding the fundamental origins of magnon transport in such a single domain multiferroic.
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Affiliation(s)
- Sajid Husain
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Isaac Harris
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sukriti Mantri
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas, USA
| | - Xinyan Li
- Materials Science and NanoEngineering, Rice University, Houston, Texas, USA
| | - Maya Ramesh
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - Piush Behera
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Hossein Taghinejad
- Department of Physics, University of California, Berkeley, CA, USA
- Heising-Simons Junior Fellow, Kavli Energy NanoScience Institute (ENSI), University of California, Berkeley, CA, USA
| | - Jaegyu Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Pravin Kavle
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Shiyu Zhou
- Department of Physics, Brown University, Providence, RI, USA
| | - Tae Yeon Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Hongrui Zhang
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Paul Stevenson
- Department of Physics, Northeastern University, Boston, MA, USA
| | - James G Analytis
- Department of Physics, University of California, Berkeley, CA, USA
| | - Darrell Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | - Sayeef Salahuddin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
| | - Jorge Íñiguez-González
- Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - Bin Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, China
| | - Lane W Martin
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Science and NanoEngineering, Rice University, Houston, Texas, USA
- Departments of Chemistry, and Physics and Astronomy, Rice University, Houston, TX, USA
- Rice Advanced Materials Institute, Rice University, Houston, TX, USA
| | - Lucas Caretta
- School of Engineering, Brown University, Providence, RI, USA
| | - Yimo Han
- Materials Science and NanoEngineering, Rice University, Houston, Texas, USA
| | - Laurent Bellaiche
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas, USA
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Ramamoorthy Ramesh
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Science and NanoEngineering, Rice University, Houston, Texas, USA.
- Departments of Chemistry, and Physics and Astronomy, Rice University, Houston, TX, USA.
- Rice Advanced Materials Institute, Rice University, Houston, TX, USA.
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3
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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Zhou C, Ma L, Feng Y, Kuo CY, Ku YC, Liu CE, Cheng X, Li J, Si Y, Huang H, Huang Y, Zhao H, Chang CF, Das S, Liu S, Chen Z. Enhanced polarization switching characteristics of HfO 2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15:2893. [PMID: 38570498 PMCID: PMC10991407 DOI: 10.1038/s41467-024-47194-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 03/22/2024] [Indexed: 04/05/2024] Open
Abstract
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
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Affiliation(s)
- Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Yu-Chieh Ku
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Cheng-En Liu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Xianlong Cheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Jingxuan Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Haoliang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Hongjian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China.
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China.
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5
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Vaz DC, Lin CC, Plombon JJ, Choi WY, Groen I, Arango IC, Chuvilin A, Hueso LE, Nikonov DE, Li H, Debashis P, Clendenning SB, Gosavi TA, Huang YL, Prasad B, Ramesh R, Vecchiola A, Bibes M, Bouzehouane K, Fusil S, Garcia V, Young IA, Casanova F. Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices. Nat Commun 2024; 15:1902. [PMID: 38429273 PMCID: PMC10907725 DOI: 10.1038/s41467-024-45868-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 02/06/2024] [Indexed: 03/03/2024] Open
Abstract
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.
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Affiliation(s)
- Diogo C Vaz
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.
| | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - John J Plombon
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Won Young Choi
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- VanaM Inc., 21-1 Doshin-ro 4-gil, Yeongdeungpo-gu, Seoul, Republic of Korea
| | - Inge Groen
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
| | - Isabel C Arango
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain
| | | | - Hai Li
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | | | | | - Tanay A Gosavi
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Yen-Lin Huang
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Bhagwati Prasad
- Materials Engineering Department, Indian Institute of Science, Bengaluru, 560012, Karnataka, India
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Aymeric Vecchiola
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Manuel Bibes
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Karim Bouzehouane
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Stephane Fusil
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Vincent Garcia
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, 91767, Palaiseau, France
| | - Ian A Young
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain.
- IKERBASQUE, Basque Foundation for Science, 48009, Bilbao, Basque Country, Spain.
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6
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Husain S, Harris I, Gao G, Li X, Meisenheimer P, Shi C, Kavle P, Choi CH, Kim TY, Kang D, Behera P, Perrodin D, Guo H, M Tour J, Han Y, Martin LW, Yao Z, Ramesh R. Low-temperature grapho-epitaxial La-substituted BiFeO 3 on metallic perovskite. Nat Commun 2024; 15:479. [PMID: 38212317 PMCID: PMC10784590 DOI: 10.1038/s41467-024-44728-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 01/03/2024] [Indexed: 01/13/2024] Open
Abstract
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
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Affiliation(s)
- Sajid Husain
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Xinyan Li
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Pravin Kavle
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chi Hun Choi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Tae Yeon Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Deokyoung Kang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Piush Behera
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Didier Perrodin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - James M Tour
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Lane W Martin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
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7
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Kim KH, Karpov I, Olsson RH, Jariwala D. Wurtzite and fluorite ferroelectric materials for electronic memory. NATURE NANOTECHNOLOGY 2023; 18:422-441. [PMID: 37106053 DOI: 10.1038/s41565-023-01361-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Accepted: 02/24/2023] [Indexed: 05/21/2023]
Abstract
Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Ilya Karpov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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8
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Dahan MM, Mulaosmanovic H, Levit O, Dünkel S, Beyer S, Yalon E. Sub-Nanosecond Switching of Si:HfO 2 Ferroelectric Field-Effect Transistor. NANO LETTERS 2023; 23:1395-1400. [PMID: 36763845 DOI: 10.1021/acs.nanolett.2c04706] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to meet the growing need for fast, low-power, low-cost, and high-density nonvolatile memory, and neuromorphic devices. Although HfO2 FeFETs have been widely studied in the past few years, their fundamental switching speed is yet to be explored. Importantly, the shortest polarization time demonstrated to date in HfO2-based FeFET was ∼10 ns. Here, we report that a single subnanosecond pulse can fully switch HfO2-based FeFET. We also study the polarization switching kinetics across 11 orders of magnitude in time (300 ps to 8 s) and find a remarkably steep time-voltage relation, which is captured by the classical nucleation theory across this wide range of pulse widths. These results demonstrate the high-speed capabilities of FeFETs and help better understand their fundamental polarization switching speed limits and switching kinetics.
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Affiliation(s)
- Mor Mordechai Dahan
- Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
| | | | - Or Levit
- Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
| | - Stefan Dünkel
- GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany
| | - Sven Beyer
- GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany
| | - Eilam Yalon
- Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
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9
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Enhanced ferroelectric and ferrimagnetism properties at room temperature in BaTiO3 doped GaFeO3 ceramics. Chem Phys Lett 2023. [DOI: 10.1016/j.cplett.2023.140316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
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10
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Parsonnet E, Caretta L, Nagarajan V, Zhang H, Taghinejad H, Behera P, Huang X, Kavle P, Fernandez A, Nikonov D, Li H, Young I, Analytis J, Ramesh R. Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field. PHYSICAL REVIEW LETTERS 2022; 129:087601. [PMID: 36053684 DOI: 10.1103/physrevlett.129.087601] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Revised: 03/07/2022] [Accepted: 05/27/2022] [Indexed: 06/15/2023]
Abstract
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO_{3}, to demonstrate nonvolatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. These findings are an important step toward magnon-based devices, where electric-field-only control is highly desirable.
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Affiliation(s)
- Eric Parsonnet
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Vikram Nagarajan
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Hossein Taghinejad
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Pravin Kavle
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - Hai Li
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - James Analytis
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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11
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Jiang Y, Parsonnet E, Qualls A, Zhao W, Susarla S, Pesquera D, Dasgupta A, Acharya M, Zhang H, Gosavi T, Lin CC, Nikonov DE, Li H, Young IA, Ramesh R, Martin LW. Enabling ultra-low-voltage switching in BaTiO 3. NATURE MATERIALS 2022; 21:779-785. [PMID: 35618823 DOI: 10.1038/s41563-022-01266-6] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Accepted: 04/20/2022] [Indexed: 06/15/2023]
Abstract
Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO3 thin films with nearly bulk-like properties. Thickness scaling provides access to the coercive voltages (<100 mV) and fields (<10 kV cm-1) required for future applications and results in a switching energy of <2 J cm-3 (corresponding to <2 aJ per bit in a 10 × 10 × 10 nm3 device). While reduction in film thickness reduces coercive voltage, it does so at the expense of remanent polarization. Depolarization fields impact polar state stability in thicker films but fortunately suppress the coercive field, thus driving a deviation from Janovec-Kay-Dunn scaling and enabling a constant coercive field for films <150 nm in thickness. Switching studies reveal fast speeds (switching times of ~2 ns for 25-nm-thick films with 5-µm-diameter capacitors) and a pathway to subnanosecond switching. Finally, integration of BaTiO3 thin films onto silicon substrates is shown. We also discuss what remains to be demonstrated to enable the use of these materials for next-generation devices.
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Affiliation(s)
- Y Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - E Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - A Qualls
- Department of Physics, University of California, Berkeley, CA, USA
| | - W Zhao
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - S Susarla
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - D Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Catalan Institute of Nanoscience and Nanotechnology, CSIC and BIST, Barcelona, Spain
| | - A Dasgupta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - M Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - H Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - T Gosavi
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - C-C Lin
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - D E Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - H Li
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - I A Young
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, University of California, Berkeley, CA, USA
| | - L W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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12
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Shi Q, Parsonnet E, Cheng X, Fedorova N, Peng RC, Fernandez A, Qualls A, Huang X, Chang X, Zhang H, Pesquera D, Das S, Nikonov D, Young I, Chen LQ, Martin LW, Huang YL, Íñiguez J, Ramesh R. The role of lattice dynamics in ferroelectric switching. Nat Commun 2022; 13:1110. [PMID: 35236832 PMCID: PMC8891289 DOI: 10.1038/s41467-022-28622-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 02/03/2022] [Indexed: 11/10/2022] Open
Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.
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Affiliation(s)
- Qiwu Shi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Natalya Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xue Chang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Material Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, L-4422, Belvaux, Luxembourg
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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13
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Zhang Y, Parsonnet E, Fernandez A, Griffin SM, Huyan H, Lin CK, Lei T, Jin J, Barnard ES, Raja A, Behera P, Pan X, Ramesh R, Yang P. Ferroelectricity in a semiconducting all-inorganic halide perovskite. SCIENCE ADVANCES 2022; 8:eabj5881. [PMID: 35138890 PMCID: PMC10921957 DOI: 10.1126/sciadv.abj5881] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2021] [Accepted: 12/16/2021] [Indexed: 06/14/2023]
Abstract
Ferroelectric semiconductors are rare materials with both spontaneous polarizations and visible light absorptions that are promising for designing functional photoferroelectrics, such as optical switches and ferroelectric photovoltaics. The emerging halide perovskites with remarkable semiconducting properties also have the potential of being ferroelectric, yet the evidence of robust ferroelectricity in the typical three-dimensional hybrid halide perovskites has been elusive. Here, we report on the investigation of ferroelectricity in all-inorganic halide perovskites, CsGeX3, with bandgaps of 1.6 to 3.3 eV. Their ferroelectricity originates from the lone pair stereochemical activity in Ge (II) that promotes the ion displacement. This gives rise to their spontaneous polarizations of ~10 to 20 μC/cm2, evidenced by both ab initio calculations and key experiments including atomic-level ionic displacement vector mapping and ferroelectric hysteresis loop measurement. Furthermore, characteristic ferroelectric domain patterns on the well-defined CsGeBr3 nanoplates are imaged with both piezo-response force microscopy and nonlinear optical microscopic method.
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Affiliation(s)
- Ye Zhang
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
| | - Sinéad M. Griffin
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Huaixun Huyan
- Department of Materials Science and Engineering, University of California, Irvine, Irvine, CA 92697, USA
| | - Chung-Kuan Lin
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Teng Lei
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
| | - Jianbo Jin
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
| | - Edward S. Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, Irvine, CA 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, Irvine, CA 92697, USA
- Irvine Materials Research Institute, University of California, Irvine, Irvine, CA 92697, USA
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, CA 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Peidong Yang
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoScience Institute, Berkeley, CA 94720, USA
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14
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Müller M, Huang YL, Vélez S, Ramesh R, Fiebig M, Trassin M. Training the Polarization in Integrated La 0.15 Bi 0.85 FeO 3 -Based Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104688. [PMID: 34606122 DOI: 10.1002/adma.202104688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Revised: 09/03/2021] [Indexed: 06/13/2023]
Abstract
The functionalities of BiFeO3 -based magnetoelectric multiferroic heterostructures rely on the controlled manipulation of their ferroelectric domains and of the corresponding net in-plane polarization, as this aspect guides the voltage-controlled magnetic switching. Chemical substitution has emerged as a key to push the energy dissipation of the BiFeO3 into the attojoule range but appears to result in a disordered domain configuration. Using non-invasive optical second-harmonic generation on heavily La-substituted BiFeO3 films, it is shown that a weak net in-plane polarization remains imprinted in the pristine films despite the apparent domain disorder. It is found that this ingrained net in-plane polarization can be trained with out-of-plane electric fields compatible with applications. Operando studies on capacitor heterostructures treated in this way show the full restoration of the domain configuration of pristine BiFeO3 along with a giant net in-plane polarization enhancement. Thus, the experiments reveal a surprising robustness of the net in-plane polarization of BiFeO3 against chemical modification, an important criterion in ongoing attempts to integrate magnetoelectric materials into energy-efficient devices.
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Affiliation(s)
- Marvin Müller
- Department of Materials, ETH Zurich, Zurich, 8093, Switzerland
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA
| | - Saül Vélez
- Department of Materials, ETH Zurich, Zurich, 8093, Switzerland
- Condensed Matter Physics Center (IFIMAC) and Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, E-28049, Spain
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Zurich, 8093, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Zurich, 8093, Switzerland
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15
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Giraldo D, Almodóvar P, López M, Rodríguez-Aguado E, Rodríguez-Castellón E, Galdámez A, Álvarez-Serrano I. Exploring multiferroicity in BiFeO3 - NaNbO3 thermistor electroceramics. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.07.045] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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16
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Krishnamoorthy A, Tiwari SC, Nakano A, Kalia RK, Vashishta P. Electric-field-induced crossover of polarization reversal mechanisms in Al 1-xSc xN ferroelectrics. NANOTECHNOLOGY 2021; 32:49LT02. [PMID: 34433137 DOI: 10.1088/1361-6528/ac20fc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2021] [Accepted: 08/25/2021] [Indexed: 06/13/2023]
Abstract
Scandium-doped aluminum nitride, Al1-xScxN, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al-Sc-N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al1-xScxN to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms-inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.
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Affiliation(s)
- Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Subodh C Tiwari
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, United States of America
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17
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Abstract
Electric field control of magnetism is an extremely exciting area of research, from both a fundamental science and an applications perspective and has the potential to revolutionize the world of computing. To realize this will require numerous further innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between condensed matter physics and the actual manifestations of the physical concepts into applications. We have attempted to paint a broad-stroke picture of the field, from the macroscale all the way down to the fundamentals of spin–orbit coupling that is a key enabler of the physics discussed. We hope it will help spur more translational research within the broad materials physics community. Needless to say, this article is written on behalf of a large number of colleagues, collaborators and researchers in the field of complex oxides as well as current and former students and postdocs who continue to pursue cutting-edge research in this field.
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Affiliation(s)
- Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sasikanth Manipatruni
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kepler Computing, Portland, OR 97229, USA
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18
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Gradauskaite E, Meisenheimer P, Müller M, Heron J, Trassin M. Multiferroic heterostructures for spintronics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.
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Affiliation(s)
- Elzbieta Gradauskaite
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - Peter Meisenheimer
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Marvin Müller
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - John Heron
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Morgan Trassin
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
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19
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Liao YC, Nikonov DE, Dutta S, Chang SC, Hsu CS, Young IA, Naeemi A. Understanding the Switching Mechanisms of the Antiferromagnet/Ferromagnet Heterojunction. NANO LETTERS 2020; 20:7919-7926. [PMID: 33054222 DOI: 10.1021/acs.nanolett.0c01852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electric-field-driven spintronic devices are considered promising candidates for beyond CMOS logic and memory applications thanks to their potential for ultralow energy switching and nonvolatility. In this work, we have developed a comprehensive modeling framework to understand the fundamental physics of the switching mechanisms of the antiferromagnet/ferromagnet heterojunction by taking BiFeO3/CoFe heterojunctions as an example. The models are calibrated with experimental results and demonstrate that the switching of the ferromagnet in the antiferromagnet/ferromagnet heterojunction is caused by the rotation of the Neel vector in the antiferromagnet and is not driven by the unidirectional exchange bias at the interface as was previously speculated. Additionally, we demonstrate that the fundamental limit of the switching time of the ferromagnet is in the subnanosecond regime. The geometric dependence and the thermal stability of the antiferromagnet/ferromagnet heterojunction are also explored. Our simulation results provide the critical metrics for designing magnetoelectric devices.
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Affiliation(s)
- Yu-Ching Liao
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Dmitri E Nikonov
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Sourav Dutta
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Sou-Chi Chang
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Chia-Sheng Hsu
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Ian A Young
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Azad Naeemi
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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20
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Pesquera D, Parsonnet E, Qualls A, Xu R, Gubser AJ, Kim J, Jiang Y, Velarde G, Huang YL, Hwang HY, Ramesh R, Martin LW. Beyond Substrates: Strain Engineering of Ferroelectric Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003780. [PMID: 32964567 DOI: 10.1002/adma.202003780] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 08/19/2020] [Indexed: 06/11/2023]
Abstract
Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO3 , production of precisely strain-engineered, substrate-released nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm-1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth.
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Affiliation(s)
- David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Ruijuan Xu
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Andrew J Gubser
- Department of Nuclear Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Jieun Kim
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Gabriel Velarde
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Harold Y Hwang
- Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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