Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature

The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 µm), with a blackbody detectivity of 2.7 × 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 µm. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection

Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.

Seeded growth of single-crystal black phosphorus nanoribbons

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions

A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.

Highly Sensitive Broadband Polarized Photodetector Based on the As0.6P0.4/WSe2 Heterostructure toward Imaging and Optical Communication Application

Polarization-sensitive photodetectors based on two-dimensional anisotropic materials still encounter the issues of narrow spectral coverage and low polarization sensitivity. To address these obstacles, anisotropic As0.6P0.4 with a narrow band gap has been integrated with WSe2 to construct a type-II heterostructure, realizing a high-performance polarization-sensitive photodetector with broad spectral range from 405 to 2200 nm. By operating in photovoltaic mode at zero bias, the device shows a very low dark current of ∼0.02 picoampere, high responsivity of 492 m A/W, and high photoswitching ratio of 6 × 104, yielding a high specific detectivity of 1.4 × 1012 Jones. The strong in-plane anisotropy of As0.6P0.4 endows the device with a capability of polarization-sensitive detection with a high polarization ratio of 6.85 under a bias voltage. As an image sensor and signal receiver, the device shows great potential in imaging and optical communication applications. This work develops an anisotropic vdW heterojunction to realize polarization-sensitive photodetectors with wide spectral coverage, fast response, and high sensitivity, providing a new candidate for potential applications of polarization-resolved electronics and photonics.

Quantitative Mid-infrared Photoluminescence Characterization of Black Phosphorus-Arsenic Alloys

Black phosphorus (bP) is a promising material for mid-infrared (mid-IR) optoelectronic applications, exhibiting high performance light emission and detection. Alloying bP with arsenic extends its operation toward longer wavelengths from 3.7 μm (bP) to 5 μm (bP3As7), which is of great practical interest. Quantitative optical characterizations are performed to establish black phosphorus-arsenic (bPAs) alloys optoelectronic quality. Anisotropic optical constants (refractive index, extinction coefficient, and absorption coefficient) of bPAs alloys from near-infrared to mid-IR (0.2-0.9 eV) are extracted with reflection measurements, which helps optical device design. Quantitative photoluminescence (PL) of bPAs alloys with different As concentrations are measured from room temperature to 77 K. PL quantum yield measurements reveal a 2 orders of magnitude decrease in radiative efficiency with increasing As concentration. An optical cavity is designed for bP3As7, which allows for up to an order of magnitude enhancement in the quantum yield due to the Purcell effect. Our comprehensive optical characterization provides the foundation for high performance mid-IR optical device design using bPAs alloys.

Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi-1D Pseudogap System (TaSe4 )2 I

Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid-wave infrared (MWIR) and long-wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra-broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi-1D pseudogap (PG) system (TaSe4 )2 I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W-1 ) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time-resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high-performance uncooled MWIR and LWIR detection by using quasi-1D PG materials.

Next-Generation Photodetectors beyond Van Der Waals Junctions

With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.

Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2 and the Room-Temperature Mid-Infrared (10 μm) Photoresponse

Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2 for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70-130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107 Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2 through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109 Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.

Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.

Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer

Photodetectors operating across the short-, mid-, and long-wave infrared (SWIR-LWIR, λ = 1-14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution-processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR-LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2  W-1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow-bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.

Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces

Black phosphorus (BP) has been established as a promising material for room temperature midwave infrared (MWIR) photodetectors. However, many of its attractive optoelectronic properties are often observable only at smaller film thicknesses, which inhibits photodetector absorption and performance. In this work, we show that metasurface gratings increase the absorption of BP-MoS2 heterojunction photodiodes over a broad range of wavelengths in the MWIR. We designed, fabricated, and characterized metasurface gratings that increase absorption at selected wavelengths or broad spectral ranges. We evaluated the broadband metasurfaces by measuring the room temperature responsivity and specific detectivity of BP-MoS2 photodiodes at multiple MWIR wavelengths. Our results show that broadband metasurface gratings are a scalable approach for boosting the performance of BP photodiodes over large spectral ranges.

A high-performance long-wave infrared photodetector based on a WSe2/PdSe2 broken-gap heterodiode

Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.

Nonlinear Plasmonics in Nanostructured Phosphorene

Phosphorene has emerged as an atomically thin platform for optoelectronics and nanophotonics due to its excellent optical properties and the possibility of actively tuning light-matter interactions through electrical doping. While phosphorene is a two-dimensional semiconductor, plasmon resonances characterized by pronounced anisotropy and strong optical confinement are anticipated to emerge in highly doped samples. Here we show that the localized plasmons supported by phosphorene nanoribbons (PNRs) exhibit high tunability in relation to both edge termination and doping charge polarity and can trigger an intense nonlinear optical response at moderate doping levels. Our explorations are based on a second-principles theoretical framework, employing maximally localized Wannier functions constructed from ab initio electronic structure calculations, which we introduce here to describe the linear and nonlinear optical response of PNRs on mesoscopic length scales. Atomistic simulations reveal the high tunability of plasmons in doped PNRs at near-infrared frequencies, which can facilitate the synergy between the electronic band structure and plasmonic field confinement to drive efficient high-harmonic generation. Our findings establish nanostructured phosphorene as a versatile atomically thin material candidate for nonlinear plasmonics.

Bottom-Up Photosynthesis of an Air-Stable Radical Semiconductor Showing Photoconductivity to Full Solar Spectrum and X-Ray

Single-component semiconductors with photoresponse to full solar spectrum are highly desirable to simplify the device structure of commercial photodetectors and to improve solar conversion or photocatalytic efficiency but remain scarce. This work reports bottom-up photosynthesis of an air-stable radical semiconductor using BiI3 and a photochromism-active benzidine derivative as a photosensitive functional motif. This semiconductor shows photoconductivity to full solar spectrum contributed by radical and non-radical forms of the benzidine derivative. It has also the potential to detect X-rays because of strong X-ray absorption coefficient. This finding opens up a new synthetic method for radical semiconductors and may find applications on extending photoresponsive ranges of perovskites, transition metal sulfides, and other materials.

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

Infrared HOT Photodetectors: Status and Outlook

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Dark Current Analysis on GeSn p-i-n Photodetectors

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze the impact of defects on the performance of GeSn p-i-n homojunction PDs. We first present our theoretical models to calculate various contributing components of the dark current, including minority carrier diffusion in p- and n-regions, carrier generation-recombination in the active intrinsic region, and the tunneling effect. We then analyze the effect of defect density in the GeSn active region on carrier mobilities, scattering times, and the dark current. A higher defect density increases the dark current, resulting in a reduction in the detectivity of GeSn p-i-n PDs. In addition, at low Sn concentrations, defect-related dark current density is dominant, while the generation dark current becomes dominant at a higher Sn content. These results point to the importance of minimizing defect densities in the GeSn material growth and device processing, particularly for higher Sn compositions necessary to expand the cutoff wavelength to mid- and long-wave infrared regime. Moreover, a comparative study indicates that further improvement of the material quality and optimization of device structure reduces the dark current and thereby increases the detectivity. This study provides more realistic expectations and guidelines for evaluating GeSn p-i-n PDs as a competitor to the III-V- and II-VI-based infrared PDs currently on the commercial market.

High-pressure response of vibrational properties of b-AsxP1-x:in situRaman studies

The structural evolution of black arsenic-phosphorous (b-AsxP1-x) alloys with varying arsenic concentrations was investigated under hydrostatic pressure usingin situRaman spectroscopy. High-pressure experiments were conducted using a diamond anvil cell, which revealed pressure-induced shifts in vibrational modes associated with P-P bonds (A1g,A2g,B2g), As-As bonds (A1g,A2g,B2g), and As-P bonds in b-AsxP1-xalloys. Two distinct pressure regimes were observed. In the first regime (region I), all vibrational modes exhibited a monotonic upshift, indicating phonon hardening due to hydrostatic pressure. In the second regime (region II), As0.4P0.6and As0.6P0.4alloys displayed a linear blueshift (or negligible change in some modes) at a reduced rate, suggesting local structural reorganization with less compression on the bonds. Notably, the alloy with the highest As concentration, As0.8P0.2, exhibited anomalous behavior in the second pressure regime, with a downward shift observed in all As-As and As-P Raman modes (and some P-P modes). Interestingly, the emergence of new peaks corresponding to theEgmode andA1gmode of the gray-As phase was observed in this pressure range, indicating compressive strain-induced structural changes. The anomalous change in region II confirms the formation of a new local structure, characterized by elongation of the P-P, As-As, and As-P bonds along the zigzag direction within the b-AsxP1-xphase, possibly near the grain boundary. Additionally, a gray-As phase undergoes compressive structural changes. This study underscores the significance of pressure in inducing structural transformations and exploring novel phases in two-dimensional materials, including b-AsxP1-xalloys.

Production of Magnetic Arsenic-Phosphorus Alloy Nanoribbons with Small Band Gaps and High Hole Conductivities

Quasi-1D nanoribbons provide a unique route to diversifying the properties of their parent 2D nanomaterial, introducing lateral quantum confinement and an abundance of edge sites. Here, a new family of nanomaterials is opened with the creation of arsenic-phosphorus alloy nanoribbons (AsPNRs). By ionically etching the layered crystal black arsenic-phosphorus using lithium electride followed by dissolution in amidic solvents, solutions of AsPNRs are formed. The ribbons are typically few-layered, several micrometers long with widths tens of nanometers across, and both highly flexible and crystalline. The AsPNRs are highly electrically conducting above 130 K due to their small band gap (ca. 0.035 eV), paramagnetic in nature, and have high hole mobilities, as measured with the first generation of AsP devices, directly highlighting their properties and utility in electronic devices such as near-infrared detectors, quantum computing, and charge carrier layers in solar cells.

Black Phosphorus for Photonic Integrated Circuits

Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.

Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus

A single photodetector capable of switching its peak spectral photoresponse between two wavelength bands is highly useful, particularly for the infrared (IR) bands in applications such as remote sensing, object identification, and chemical sensing. Technologies exist for achieving dual-band IR detection with bulk III-V and II-VI materials, but the high cost and complexity as well as the necessity for active cooling associated with some of these technologies preclude their widespread adoption. In this study, we leverage the advantages of low-dimensional materials to demonstrate a bias-selectable dual-band IR detector that operates at room temperature by using lead sulfide colloidal quantum dots and black phosphorus nanosheets. By switching between zero and forward bias, these detectors switch peak photosensitive ranges between the mid- and short-wave IR bands with room temperature detectivities of 5 × 10⁹ and 1.6 × 10¹¹ cm Hz^1/2 W^-1, respectively. To the best of our knowledge, these are the highest reported room temperature values for low-dimensional material dual-band IR detectors to date. Unlike conventional bias-selectable detectors, which utilize a set of back-to-back photodiodes, we demonstrate that under zero/forward bias conditions the device's operation mode instead changes between a photodiode and a phototransistor, allowing additional functionalities that the conventional structure cannot provide.

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As[Formula: see text]P[Formula: see text] gate layer

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text]P[Formula: see text]) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As[Formula: see text]P[Formula: see text] energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As[Formula: see text]P[Formula: see text] atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of [Formula: see text] A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.

Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers

Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 μ_B can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.

Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors

Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO₂/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeO_x/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW^-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 10³%, a maximum specific detectivity of 4.16 × 10¹⁰ Jones, and an ultralow noise equivalent power of 0.09 pW/Hz^1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.

Hydrogen-Terminated Two-Dimensional Germanane/Silicane Alloys as Self-Powered Photodetectors and Sensors

2D monoelemental materials, particularly germanene and silicene (the single layer of germanium and silicon), which are the base materials for modern electronic devices demonstrated tremendous attraction for their 2D layer structure along with the tuneable electronics and optical band gap. The major shortcoming of synthesized thermodynamically very unstable layered germanene and silicene with their inclination toward oxidation was overcome by topochemical deintercalation of a Zintl phase (CaGe₂, CaGe_1.5Si_0.5, and CaGeSi) in a protic environment. The exfoliated Ge-H, Ge_0.75Si_0.25H, and Ge_0.5Si_0.5H were successfully synthesized and employed as the active layer for photoelectrochemical photodetectors, which showed broad response (420-940 nm), unprecedented responsivity, and detectivity on the order of 168 μA W^-1 and 3.45 × 10⁸ cm Hz^1/2 W^-1, respectively. The sensing capability of exfoliated germanane and silicane composites was explored using electrochemical impedance spectroscopy with ultrafast response and recovery time of less than 1 s. These positive findings serve as the application of exfoliated germanene and silicene composites and can pave a new path to practical applications in efficient future devices.

Recent Progress in MXene Hydrogel for Wearable Electronics

Recently, hydrogels have attracted great attention because of their unique properties, including stretchability, self-adhesion, transparency, and biocompatibility. They can transmit electrical signals for potential applications in flexible electronics, human-machine interfaces, sensors, actuators, et al. MXene, a newly emerged two-dimensional (2D) nanomaterial, is an ideal candidate for wearable sensors, benefitting from its surface's negatively charged hydrophilic nature, biocompatibility, high specific surface area, facile functionalization, and high metallic conductivity. However, stability has been a limiting factor for MXene-based applications, and fabricating MXene into hydrogels has been proven to significantly improve their stability. The unique and complex gel structure and gelation mechanism of MXene hydrogels require intensive research and engineering at nanoscale. Although the application of MXene-based composites in sensors has been widely studied, the preparation methods and applications of MXene-based hydrogels in wearable electronics is relatively rare. Thus, in order to facilitate the effective evolution of MXene hydrogel sensors, the design strategies, preparation methods, and applications of MXene hydrogels for flexible and wearable electronics are comprehensively discussed and summarized in this work.

Coupling between Pyroelectricity and Built-In Electric Field Enabled Highly Sensitive Infrared Phototransistor Based on InSe/WSe2/P(VDF-TrFE) Heterostructure

The assorted utilization of infrared detectors induces the demand for more comprehensive and high-performance electronic devices that work at room temperature. The intricacy of the fabrication process with bulk material limits the exploration in this field. However, two-dimensional (2D) materials with a narrow band gap opening aid in infrared (IR) detection relatively, but the photodetection range is narrowed due to the inherent band gap. In this study, we report an unprecedented attempt at the coordinated use of both 2D heterostructure (InSe/WSe₂) and the dielectric polymer (poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE)) for both visible and IR photodetection in a single device. The remnant polarization due to the ferroelectric effect of the polymer dielectric enhances the photocarrier separation in the visible range, resulting in high photoresponsivity. On the other hand, the pyroelectric effect of the polymer dielectric causes a change in the device current due to the increased temperature induced by the localized heating effect of the IR irradiation, which results in the change of ferroelectric polarization and induces the redistribution of charge carriers. In turn, it changes the built-in electric field, the depletion width, and the band alignment across the p-n heterojunction interface. Consequently, the charge carrier separation and the photosensitivity are therefore enhanced. Through the coupling between pyroelectricity and built-in electric field across the heterojunction, the specific detectivity for the photon energy below the band gap of the constituent 2D materials can reach up to 10¹¹ Jones, which is better than all reported pyroelectric IR detectors. The proposed approach combining the ferroelectric and pyroelectric effects of the dielectric as well as exceptional properties of the 2D heterostructures can spark the design of advanced and not-yet realized optoelectronic devices.

A two-dimensional mid-infrared optoelectronic retina enabling simultaneous perception and encoding

Infrared machine vision system for object perception and recognition is becoming increasingly important in the Internet of Things era. However, the current system suffers from bulkiness and inefficiency as compared to the human retina with the intelligent and compact neural architecture. Here, we present a retina-inspired mid-infrared (MIR) optoelectronic device based on a two-dimensional (2D) heterostructure for simultaneous data perception and encoding. A single device can perceive the illumination intensity of a MIR stimulus signal, while encoding the intensity into a spike train based on a rate encoding algorithm for subsequent neuromorphic computing with the assistance of an all-optical excitation mechanism, a stochastic near-infrared (NIR) sampling terminal. The device features wide dynamic working range, high encoding precision, and flexible adaption ability to the MIR intensity. Moreover, an inference accuracy more than 96% to MIR MNIST data set encoded by the device is achieved using a trained spiking neural network (SNN).

Record-High Work-Function p-Type CuBiP2 Se6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor

The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP₂ Se₆ atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm² V^-1 s^-1 , and an ultrahigh on/off current exceeding 10⁶ at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP₂ Se₆ . Additionally, a multilayer graphene/CuBiP₂ Se₆ /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 10⁴ A W^-1 , an external quantum efficiency (EQE) of 1.5 × 10⁷ %, a detectivity (D) of 1.14 × 10¹³ Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP₂ Se₆ an ideal p-type candidate material for next-generation CMOSs logic devices.

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

Large-Area Black Phosphorus/PtSe2 Schottky Junction for High Operating Temperature Broadband Photodetectors

High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe₂ films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe₂ interface and resulting in full depleted working channels, the BP/PtSe₂ photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W^-1 and 6.4 × 10¹¹ Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe₂ photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe₂ films.

Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release

Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to ~6,500 cm² V^-1 s^-1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.

Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors

Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic anisotropy arising from the low-symmetry structure can be applied in the design of new devices. However, the rapid degradation of mechanically exfoliated GeAs in the environment poses a challenge to its practical development in scalable devices. Here, an approach to stabilize the sensitive material without isolation from the ambient environment is reported. The graphene capping layer effectively suppresses environmental degradation, enabling the encapsulated GeAs photodetectors to maintain the key electronic properties for more than 3 months under ambient conditions. In addition, the regulation of the work function of graphene significantly improves the device performance. An improved responsivity of 965.07 A/W is 20 times higher than that of pure GeAs. This work provides opportunities for the practical application of GeAs and other environmentally sensitive 2D materials.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Chalcogen (S, Se, and Te) decorated few-layered Ti3C2Tx MXene hybrids: modulation of properties through covalent bonding

2D carbides and nitrides of transition metals (MXenes) have shown great promise in a variety of energy storage and energy conversion applications. The extraordinary properties of MXenes are because of their excellent conductivity, large carrier concentration, vast specific surface area, superior hydrophilicity, high volumetric capacitance, and rich surface chemistry. However, it is still desired to synthesize MXenes with specific functional groups that deliver the required characteristics. This is due to the fact that a considerable amount of metal atoms is exposed on the surface of MXenes during their synthesis through an etching procedure; hence, other anions and cations are uncontrollably implanted on their surfaces. Because of this situation, the first invented Ti₃C₂T_x MXene suffers from low photoresponsivity and detectivity, large overpotential, and small sensitivity in photoelectrochemical (PEC) photodetectors, hydrogen evolution reaction (HER), and sensing applications. Therefore, surface modification of the MXene structure is required to develop the device's performance. On the other hand, there is still a lack of understanding of the MXene mechanism in such cutting-edge applications. Thus, the manipulations of MXenes are highly dependent on understanding the device mechanism, suitable modification elements, and modification methods. This study for the first time reveals the conjugation effect of pre-selected S, Se, and Te chalcogen elements on a few-layered Ti₃C₂T_x MXene to synthesize new composites for PEC photodetector, HER, and vapor sensor applications. Also, the mechanism of the chalcogen decorated few-layered Ti₃C₂T_x MXene composites for each application is discussed. The selection of a few-layered Ti₃C₂T_x MXene is due to its fascinating characteristics which make it capable to be considered as an appropriate substrate and incorporating chalcogen atoms. The Te-decorated few-layered Ti₃C₂T_x MXene composite provides better performances in PEC photodetector and vapor sensing applications. Although the potential value of the Se-decorated few-layered Ti₃C₂T_x composite is slightly lower than that of the Te-decorated sample in HER application, its overpotential is still greater than that of the Te-decorated sample. The acquired results show that the S-decorated few-layered Ti₃C₂T_x composite demonstrates the lowest performance in all three examined applications in comparison with the other two samples.

Stable multifunctional aluminum phosphides at high pressures

Phosphides have been used in a wide range of applications due to their excellent optical, mechanical, and catalytic properties. Using an effective unbiased structure searching method combined with first-principles calculations, the phase diagram and physical and chemical properties of aluminum phosphides have been determined at high pressures. The results reveal that the unconventional stoichiometries of Al₂P, AlP₂, and AlP₃ remain stable above 66, 91, and 116 GPa, respectively. Interestingly, the analysis of the phonon spectrum suggests that AlP₂ with P2₁ symmetry can be dynamically stable at atmospheric pressure. In addition, the band gap of 1.51 eV at the HSE06 level and the estimated Vickers hardness of ∼10.54 GPa make P2₁-AlP₂ a hard photoelectric material. Moreover, our electronic properties show that AlP₃ with Immm symmetry and AlP₂ with I4/mmm structure are metallic at high pressures and further electron-phonon coupling calculations indicate Immm-AlP₃ and I4/mmm-AlP₂ are superconductors with estimated T_c values of 3.9 K at 150 GPa and 10.2 K at 100 GPa, respectively. Our work provides significant inputs toward understanding novel chemical bonding in aluminum phosphides and gives a direction for the experimental synthesis of multifunctional materials at high pressures.

Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and roughness-induced light polarization state variation, displace unique advantages in the fields of national security, medical diagnosis, and aerospace. The utilization of in-plane anisotropic two-dimensional (2D) materials has led the polarization photodetector into a polarizer-free regime, and facilitated the miniaturization of optoelectronic device integration. However, the insufficient polarization ratio (usually less than 10) restricts the detection resolution of polarized signals. Here, we designed a sub-wavelength array (SWA) structure of 2D germanium selenium (GeSe) to further improve its anisotropic sensitivity, which boosts the polarized photocurrent ratio from 1.6 to 18. This enhancement comes from the combination of nano-scale arrays with atomic-scale lattice arrangement at the low-symmetric direction, while the polarization-sensitive photoresponse along the high-symmetric direction is strongly suppressed due to the SWA-caused depolarization effect. Our mechanism study revealed that the SWA can improve the asymmetry of charge distribution, attenuate the matrix element in zigzag direction, and the localized surface plasma, which elevates the photo absorption and photoelectric transition probability along the armchair direction, therefore accounts for the enhanced polarization sensitivity. In addition, the photodetector based on GeSe SWA exhibited a broad power range of 40 dB at a near-infrared wavelength of 808 nm and the ability of weak-light detection under 0.1 LUX of white light (two orders of magnitude smaller than pristine 2D GeSe). This work provides a feasible guideline to improve the polarization sensitivity of 2D materials, and will greatly benefit the development of polarized imaging sensors.

2D Few-Layered PdPS: Toward High-Efficient Self-Powered Broadband Photodetector and Sensors

Photodetectors and sensors have a prominent role in our lives and cover a wide range of applications, including intelligent systems and the detection of harmful and toxic elements. Although there have been several studies in this direction, their practical applications have been hindered by slow response and low responsiveness. To overcome these problems, we have presented here a self-powered (photoelectrochemical, PEC), ultrasensitive, and ultrafast photodetector platform. For this purpose, a novel few-layered palladium-phosphorus-sulfur (PdPS) was fabricated by shear exfoliation for effective photodetection as a practical assessment. The characterization of this self-powered broadband photodetector demonstrated superior responsivity and specific detectivity in the order of 33 mA W^-1 and 9.87 × 10¹⁰ cm Hz^1/2 W^-1, respectively. The PEC photodetector also exhibits a broadband photodetection capability ranging from UV to IR spectrum, with the ultrafast response (∼40 ms) and recovery time (∼50 ms). In addition, the novel few-layered PdPS showed superior sensing ability to organic vapors with ultrafast response and a recovery time of less than 1 s. Finally, the photocatalytic activity in the form of hydrogen evolution reaction was explored due to the suitable band alignment and pronounced light absorption capability. The self-powered sensing platforms and superior catalytic activity will pave the way for practical applications in efficient future devices.

Phase-controlled van der Waals growth of wafer-scale 2D MoTe2 layers for integrated high-sensitivity broadband infrared photodetection

Being capable of sensing broadband infrared (IR) light is vitally important for wide-ranging applications from fundamental science to industrial purposes. Two-dimensional (2D) topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation. However, the low charge separation efficiency, high noise level, and on-chip integration difficulty of these semimetals significantly hinder their further technological applications. Here, we demonstrate a facile thermal-assisted tellurization route for the van der Waals (vdW) growth of wafer-scale phase-controlled 2D MoTe₂ layers. Importantly, the type-II Weyl semimetal 1T'-MoTe₂ features a unique orthorhombic lattice structure with a broken inversion symmetry, which ensures efficient carrier transportation and thus reduces the carrier recombination. This characteristic is a key merit for the well-designed 1T'-MoTe₂/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6 µm and a large room temperature specific detectivity of over 10⁸ Jones in the mid-infrared (MIR) range. Moreover, the large-area synthesis of 2D MoTe₂ layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array. This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

Black Arsenic-Phosphorus Nanosheets for Highly Responsive Photodetection and Dual-Wavelength Ultrafast Pulse Generation at Telecommunication Bands

Black arsenic-phosphorus (b-AsP), an alloy containing black phosphorus and arsenic in the form of b-As_xP_1-x, has a broadly tunable band gap changing with the chemical ratios of As and P. Although mid-infrared photodetectors and mode-locked or Q-switched pulse lasers based on b-AsP (mostly b-As_0.83P_0.17) are investigated, the potential of this family of materials for near-infrared photonic and optoelectronic applications at telecommunication bands is not fully explored. Here, we have verified a multifunctional fiber device based on b-As_0.4P_0.6 nanosheets for highly responsive photodetection and dual-wavelength ultrafast pulse generation at around 1550 nm. The fiber laser with a saturable absorber (SA) based on b-As_0.4P_0.6 nanosheets can output dual-wavelength mode-locking pulses with a larger bandwidth and spectral separation than those based on other two-dimensional (2D) materials. Remarkably, it is found that the b-As_0.4P_0.6-based photodetector can achieve a high responsivity of 10,200 A/W at 1550 nm and a peak responsivity of 2.29 × 10⁵ A/W at 980 nm. Our work suggests that b-As_0.4P_0.6 shows great potential in ultrafast photonics, dual-comb spectroscopy, and infrared signal detection.

High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process

This paper reports a series of novel photodetectors based on one-dimensional array of metal-oxide-semiconductor field-effect transistors (MOSFETs), which were fabricated using the standard 0.8-µm complementary metal oxide semiconductor (CMOS) process. Normally, the metal fingers of MOSFET must be manufactured above active region in standard CMOS process, causing MOSFET insensitive to light. The proposed photodetectors use the metal fingers of MOSFETs in a one-dimensional array to form periodical slit structures, which make the transmittance of incident light higher, due to the surface plasmons (SPs) resonance effect. The number of parallel MOSFETs in one-dimensional array is 3, 5, 7, 9 and 11. The experimental results show that all responsivities (Rv) are greater than 10³ A/W within visible and near-infrared spectra under room temperature and a maximum value of 1.40 × 10⁵ A/W is achieved, which is at least one order of magnitude larger than those of published photodetectors. Furthermore, a minimum noise equivalent power (NEP) of 5.86 fW/Hz^0.5 at 30 Hz and a maximum detectivity (D*) of 2.21 × 10¹³ Jones are obtained. The photodetectors still have good signal-to-noise ratio when the bandwidth is 1 GHz. At the same time, the optical scanning imaging was completed by utilizing the photodetectors. This combination of high Rv, excellent NEP, high speed and broad spectrum range photodetectors will be widely used in imaging systems.

Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector

Black phosphorus (BP) has emerged as a promising materials system for mid-wave infrared photodetection because of its moderate bandgap, high carrier mobility, substrate compatibility, and bandgap tunability. However, its uniquely tunable bandgap can only be taken advantage of with thin layer thicknesses, which ultimately limits the optical absorption of a BP photodetector. This work demonstrates an absorption-boosting resonant metal-insulator-metal (MIM) metasurface grating integrated with a thin-film BP photodetector. We designed and fabricated different MIM gratings and characterized their spectral properties. Then, we show that an MIM structure increased room temperature responsivity from 12 to 77 mA W^-1 at 3.37 μm when integrated with a thin-film BP photodetector. Our results show that MIM structures simultaneously increase mid-wave infrared absorption and responsivity in a thin-film BP photodetector.

Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI2 Nanoplates

Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI₂ nanoplates on transparent conducting substrates. Characterization of PbI₂ nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10^-13 A, a high light on/off ratio up to 10⁶, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.

First-principles study of O-functionalized two-dimensional AsP monolayers: electronic structure, mechanical, piezoelectric, and optical properties

Using density functional theory, we investigated the geometrical properties, electronic structures, carrier mobilities, piezoelectric coefficients, and optical absorption behaviors of three O-functionalizedβ-phase AsP structures (b-AsPO-FO, b-AsPO-As-SO and b-AsPO-P-SO). It is shown that three O-functionalized monolayers are all indirect semiconductors with bandgaps of 0.21, 0.67, and 0.80 eV, respectively. Our calculations demonstrated that the pristine AsP monolayer and these O-functionalized AsP monolayers have strongly anisotropic carrier mobilities, allowing their potential applications for in-plane anisotropic electronic device. The bandgaps of three functionalized nanomaterials exhibit non-monotonic variations under the biaxial strains changing from -0.10 to +0.10, all experiencing metal-indirect bandgap-direct bandgap transition. The calculated in-plane Young's modulus results suggest that they are fairly flexible to allow the application of large elastic strains on the chemically functionalized AsP monolayers. Furthermore, the b-AsPO-FO monolayer exhibits excellent anisotropic light-harvesting behavior (absorption peak: 2.36 and 2.76 eV alongxand 2.37 eV alongydirection) in visible light region. The b-AsPO-As-SO and b-AsPO-P-SO monolayers have strong absorption peak at 2.60 eV and 2.87 eV, respectively. The tunable electronic structures, anisotropic carrier mobility, and excellent optical absorption properties may facilitate practical applications of O-functionalized b-AsP monolayers in nanoelectronics and photovoltaics.

Tunable Schottky and ohmic contacts in the Ti2NF2/α-Te van der Waals heterostructure

Two dimensional α-Te holds great promise in optoelectronic devices because of its high mobility and excellent environmental stability. In this study, the electronic structures and interfacial contact characteristics of the Ti₂NF₂/α-Te van der Waals heterostructure are investigated by means of first-principles calculations. It is found that p-type Schottky contacts with a Schottky barrier (SB) of 0.21 eV are formed at the Ti₂NF₂/α-Te interface. By applying external electric fields or controlling the interlayer coupling between the Ti₂NF₂ and α-Te monolayers, the SB height can be effectively tuned, and all the n-type Schottky, p-type Schottky, n-type ohmic and p-type ohmic contacts can be achieved. Such an extremely high tunability is further found to be closely associated with the charge transfer at the interface, as well as the interface dipole and the potential step. Our results provide an avenue for the design of future α-Te-based electronic devices with high performance.

Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS₂ -BP-MoS₂ vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W^-1 and low noise-equivalent power of 2.0 × 10^-14  W Hz^-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 10¹⁰  cm Hz^1/2  W^-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.