Near-equilibrium growth from borophene edges on silver

Coherently confined single-metal-atom chains in 2D semiconductors

Single-metal-atom chains (SMACs) possess a variety of unique properties and functionalities but suffer from ambient vulnerability due to their delicate one-atom-width structures. While some SMACs can be effectively stabilized by nanochannel confining, it remains a pressing challenge to experimentally realize more versatile atomic chains with sufficient stability and extended length. Here, we propose a computational protocol to identify transition metals capable of forming SMACs along mirror twin boundaries in two-dimensional metal dichalcogenides. Taking MoS2 as a prototypical example, our thermodynamics and kinetics calculations indicate that Co, Ni, Rh, Pd, and Pt atoms can be enticed by the progressive formation of mirror twin boundaries to yield robust SMACs; whereas other transition metal elements tend to result in either substitutional doping or nanoclusters. These findings are supported by successful experimental synthesis of Co-, Ni-, Pd- and Pt-based SMACs using a chemical vapor co-deposition method, which exhibit high stability due to their covalent bonding with MoS2 grains. These results lay a solid foundation for investigating exotic transport behaviors within extremely confined channels.

Synthesis and Anisotropic Memristive Behavior of Borophene Nanosheets

Neuromorphic computing, marked by its parallel computational abilities and low power usage, has become pivotal in advancing artificial intelligence. However, the advancement of neuromorphic computing has faced significant obstacles due to the performance limitations of traditional memory devices struggling with high power consumption and limited reliability. Two-dimensional (2D) materials have been extensively investigated as high-performance memristive materials, but they are often restricted by fixed memristive properties, which complicate circuit design and limit flexibility. Here, we report that multilayer borophene nanosheets represent a breakthrough material, displaying anisotropic variable memristive properties. The nanosheets, comprising semiconductor α'-4H-borophene sheets and metal β12-borophene sheets, have been synthesized on aluminum foil surface through chemical vapor deposition method. The multilayer borophene nanosheets exhibit volatile memory behavior in the vertical direction and non-volatile memory behavior in the planar direction. This innovative class of 2D nanosheets not only overcomes the limitations of conventional memory devices but also expands the potential applications of borophene-based memories in information storage and in-memory computing.

Ab Initio Kinetic Pathway of Diborane Decomposition on Transition Metal Surfaces in Borophene Chemical Vapor Deposition Growth

The chemical vapor deposition (CVD) method holds promise for the scalable and controlled synthesis of high-quality borophene. However, the current lack of an atomistic understanding of intricate kinetic pathways from precursors to borophene impedes process optimization. Here, we employ first-principles simulations to systematically explore the pyrolytic decomposition pathways of the most used precursor diborane (B2H6) to borophene on various transition metal surfaces. Our results reveal that B2H6 on various metal substrates exhibits different dissociation behaviors. Meanwhile, the activity of the examined metal substrates is quite anisotropic and surface direction-dependent, where the estimated overall catalytic activity order of these metals is found to be Pd ≈ Pt ≈ Rh > Ir ≈ Ru ≈ Cu > Au ≈ Ag. Our study provides atomistic insights into the dissociation kinetics of diborane precursors on various transition metal surfaces, serving as a guide for experimental growth of borophene.

Hybrid van der Waals Epitaxy

The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the growth of a nitride epilayer on a vdW substrate, e.g., AlN on graphene, may belong to a previously unknown model, named hybrid vdW epitaxy (HVE). Atomic-scale simulations demonstrate that a unique interfacial hybrid-vdW interaction can be created between AlN and graphene, and, consequently, a first-principles-based continuum growth model is developed to capture the unusual features of HVE. Surprisingly, it is revealed that the in-plane and out-of-plane growth are strongly correlated in HVE, which is absent in existing growth models. The concept of HVE is confirmed by our experimental measurements, presenting a new growth mechanism beyond the current category of material growth.

Boron nanosheets boosting solar thermal water evaporation

Hydrogel-based solar vapour generators (SVGs) are promising for wastewater treatment and desalination. The performance of SVG systems is governed by solar thermal conversion and water management. Progress has been made in achieving high energy conversion efficiency, but the water evaporation rates are still unsatisfactory under 1 sun irradiation. This study introduced novel two-dimensional (2D) boron nanosheets as additives into hydrogel-based SVGs. The resulting SVGs exhibit an outstanding evaporation rate of 4.03 kg m-2 h-1 under 1 sun irradiation. This significant improvement is attributed to the 2D boron nanosheets, which leads to the formation of a higher content of intermediate water and reduced water evaporation enthalpy to 845.11 kJ kg-1. The SVGs into which boron nanosheets were incorporated also showed high salt resistance and durability, demonstrating their great potential for desalination applications.

Self-Termination of Borophene Edges

Due to boron's unique bonding nature, planar boron materials, including borophenes, boron nanoclusters, and nanoribbons, show very puzzling features, especially the superior stability of the free-standing planar boron edges. Here, we present a systematic investigation of the bonding configurations of various edges of borophene. Because of the flexibility of forming either three-center two-electron (3c-2e) or two-center two-electron bonds (2c-2e), an edge of borophene tends to be self-terminated by adopting a different bonding configuration at the edge from that in bulk. Among various borophene edge types, the double-chain-terminated flat edge is found to be significantly stable. As a consequence, we found that the double- and triple-chain borophene nanoribbons with a triangular lattice and wider ribbons with hexagonal holes in the central area are more stable than the quadruple-chain borophene nanoribbon. This study greatly deepens our understanding of the bonding configurations, electronic properties, and stabilities of planar boron nanostructures and paves the way for the rational design and synthesis of various boron materials.

Synthesis of Quantum-Confined Borophene Nanoribbons

Borophene nanoribbons (BNRs) are one-dimensional strips of atomically thin boron expected to exhibit quantum-confined electronic properties that are not present in extended two-dimensional borophene. While the parent material borophene has been experimentally shown to possess anisotropic metallicity and diverse polymorphic structures, the atomically precise synthesis of nanometer-wide BNRs has not yet been achieved. Here, we demonstrate the synthesis of multiple BNR polymorphs with well-defined edge configurations within the nanometer-scale terraces of vicinal Ag(977). Through atomic-scale imaging, spectroscopy, and first-principles calculations, the synthesized BNR polymorphs are characterized and found to possess distinct edge structures and electronic properties. For single-phase BNRs, v1/6-BNRs and v1/5-BNRs adopt reconstructed armchair edges and sawtooth edges, respectively. In addition, the electronic properties of single-phase v1/6-BNRs and v1/5-BNRs are dominated by Friedel oscillations and striped moiré patterns, respectively. On the other hand, mixed-phase BNRs possess quantum-confined states with increasing nodes in the electronic density of states at elevated biases. Overall, the high degree of polymorphism and diverse edge topologies in borophene nanoribbons provide a rich quantum platform for studying one-dimensional electronic states.

A family of superconducting boron crystals made of stacked bilayer borophenes

Monolayer borophenes tend to be easily oxidized, while thicker borophenes have stronger antioxidation properties. Herein, we proposed four novel metallic boron crystals by stacking the experimentally synthesized borophenes, and one of the crystals has been reported in our previous experiments. Bilayer units tend to act as blocks for crystals as determined by bonding analyses. Their kinetic, thermodynamic and mechanical stabilities are confirmed by our calculated phonon spectra, molecular dynamics and elastic constants. Our proposed allotropes are more stable than the boron α-Ga phase below 1000 K at ambient pressure. Some of them become more stable than the α-rh or γ-B₂₈ phases at appropriate external pressure. More importantly, our calculations show that three of the proposed crystals are phonon-mediated superconductors with critical temperatures of about 5-10 K, higher than those of most superconducting elemental solids, in contrast to typical boron crystals with significant band gaps. Our study indicates a novel preparation method for metallic and superconducting boron crystals dispensing with high pressure.

Quasi-Freestanding Bilayer Borophene on Ag(111)

The lattice structure of monolayer borophene depends sensitively on the substrate yet is metallic independent of the environment. Here, we show that bilayer borophene on Ag(111) shares the same ground state as its freestanding counterpart that becomes semiconducting with an indirect bandgap of 1.13 eV, as evidenced by an extensive structural search based on first-principles calculations. The bilayer structure is composed of two covalently bonded v_1/12 boron monolayers that are stacked in an AB mode. The interlayer bonds not only localize electronic states that are otherwise metallic in monolayer borophene but also in part decouple the whole bilayer from the substrate, resulting in a quasi-freestanding system. More relevant is that the predicted bilayer model of a global minimum agrees well with recently synthesized bilayer borophene on Ag(111) in terms of lattice constant, topography, and moiré pattern.

Probing borophene oxidation at the atomic scale

Two-dimensional boron (i.e. borophene) holds promise for a variety of emerging nanoelectronic and quantum technologies. Since borophene is synthesized under ultrahigh vacuum (UHV) conditions, it is critical that the chemical stability and structural integrity of borophene in oxidizing environments are understood for practical borophene-based applications. In this work, we assess the mechanism of borophene oxidation upon controlled exposure to air and molecular oxygen in UHV via scanning tunneling microscopy andspectroscopy, x-ray photoelectron spectroscopy, and density functional theory calculations. While borophene catastrophically degrades almost instantaneously upon exposure to air, borophene undergoes considerably more controlled oxidation when exposed to molecular oxygen in UHV. In particular, UHV molecular oxygen dosing results in single-atom covalent modification of the borophene basal plane in addition to disordered borophene edge oxidation that shows altered electronic characteristics. By comparing these experimental observations with density functional theory calculations, further atomistic insight is gained including pathways for molecular oxygen dissociation, surface diffusion, and chemisorption to borophene. Overall, this study provides an atomic-scale perspective of borophene oxidation that will inform ongoing efforts to passivate and utilize borophene in ambient conditions.

Monolayer, Bilayer, and Bulk BSi as Potential Anode Materials of Li-Ion Batteries

Monolayer, bilayer, and bulk BSi are studied to explore their application potential as anode materials of Li-ion batteries. Structural stability and metallicity are obtained in each case. The Li storage capacities of monolayer and bilayer BSi are 1378 and 689 mAh/g, respectively, with average open circuit voltages of 1.30 and 0.47 V as well as Li diffusion barriers of 0.48 and 0.27 eV. Bulk BSi realizes a layered structure in the presence of a small amount of Li and its Li diffusion barrier of 0.48 eV is identical to that of graphite and lower than that of bulk Si (0.58 eV). The Li storage capacity of bulk BSi is found to be 689 mAh/g, i.e., much higher than that of graphite (372 mAh/g). The volume expansion turns out to be 33% and the chemical bonds remain intact at full lithiation, outperforming the 72% volume expansion of bulk Si at the same capacity and thus pointing to excellent cyclability.

Borophane Polymorphs

Hydrogenated borophenes─borophanes─have recently been synthesized as a new platform for studying low-dimensional borides, but most of their lattice structures remain unknown. Here, we determine the structures of borophane polymorphs on Ag(111) by performing extensive structural search using the cluster expansion method augmented with first-principles calculations. Our results reveal rich borophane polymorphs whose stability depends on hydrogen pressure. At relatively low hydrogen pressures, borophane structures with rhombic patterns of two-center-two-electron B-H bonds are energetically preferred, in excellent agreement with two experimentally observed phases. In a wider range of hydrogen pressures, the structure with a combination of two-center-two-electron B-H and three-center-two-electron B-H-B bonds is a deep global minimum, rationalizing its experimental prevalence. For all these borophane polymorphs, their hydrogen "skin" raises the energy barriers for oxidation above 1.1 eV, while their work functions can be reduced by more than 0.5 eV through varying the hydrogen coverage.

Anisotropic Kubo conductivity of electric field-induced monolayer β12-borophene

The optical conductivity of β12-borophene for polarized light along x direction is studied.

Step-Edge Epitaxy for Borophene Growth on Insulators

Borophene─a monatomic layer of boron atoms─stands out among two-dimensional (2D) materials, with its versatile properties tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. Borophene growth on an inert insulator would allow postsynthesis exfoliation, but the weak adhesion to such a substrate results in a high 2D nucleation barrier, preventing clean borophene growth. This challenge can be circumvented in a strategy devised and demonstrated here with ab initio calculations. Naturally present 1D-defects, the step-edges on an h-BN substrate surface, enable boron epitaxial assembly, reduce the nucleation dimensionality, and lower the barrier by an order of magnitude (to 1.1 eV or less), yielding a v_1/9 phase. Weak borophene adhesion to the insulator makes it readily accessible for comprehensive property tests or transfer into the device setting.

Imparting α-Borophene with High Work Function by Fluorine Adsorption: A First-Principles Investigation

Increasing the work function of borophene over a large range is crucial for the development of borophene-based anode materials for highly efficient electronic devices. In this study, the effect of fluorine adsorption on the structures and stabilities, particularly on the work function, of α-borophene (BBP), was systematically investigated via first-principles density functional theory. The calculations indicated that BBP was well-stabilized by fluorine adsorption and the work functions of metallic fluorine-adsorbed BBPs (F_n-BBPs) sharply increased with increasing fluorine content. Moreover, the work function of F-BBP was close to that of the frequently used anode material Au and even, for other F_n-BBPs, higher than that of Pt. Furthermore, we have comprehensively discussed the factors, including substrate deformation, charge transfer, induced dipole moment, and Fermi and vacuum energy levels, affecting the improvement of work function. Particularly, we have demonstrated that the charge redistribution of the substrate induced by the bonding interaction between fluorine and the matrix predominantly contributes to the observed increase in the work function. Additionally, the effect of fluorine adsorption on the increase in the work function of BBP was significantly stronger than that of silicene or graphene. Our results concretely support the fact that F_n-BBPs can be extremely attractive anode materials for electronic device applications.

Tuning Electronic Properties of 2D Materials Using Metal Adsorbates: Cu at WTe2 Edges

Two-dimensional materials exhibit properties promising for novel applications. Topologically protected states at their edges can be harnessed for use in quantum devices. We use ab initio simulations to examine properties of edges in 1T'-WTe₂ monolayers, known to exhibit topological order, and their interactions with Cu atoms. Comparison of (010)-oriented edges that have the same composition but different terminations shows that, as the number of Cu atoms increases, their thermodynamically preferred arrangement depends on the details of the edge structure. Cu atoms aggregate into a cluster at the most stable edge; while the cluster is nonmagnetic, it spin-polarizes the W atoms along the edge, which removes the topological protection. At the metastable edge, Cu atoms form a chain incorporated into the WTe₂ lattice; the topological state is preserved in spite of the dramatic edge restructuring. This suggests that exploiting interactions of metal species with metastable edge terminations can provide a path toward noninvasive interfaces.

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W-1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W-1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition-grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Fully Boron-Sheet-Based Field Effect Transistors from First-Principles: Inverse Design of Semiconducting Boron Sheets

High-performance two-dimensional (2D) field effect transistors (FETs) have a broad application prospect in future electronic devices. The lack of an ideal material system, however, hinders the breakthrough of 2D FETs. Recently, phase engineering offers a promising solution, but it requires both semiconducting and metallic phases of materials. Here we suggest borophenes as ideal systems for 2D FETs by theoretically searching semiconducting phases. Using multiobjective differential optimization algorithms implemented in the IM²ODE package and the first-principles calculations, we have successfully identified 16 new semiconducting borophenes. Among them, the B₁₂-1 borophene is the most stable semiconducting phase, whose total energy is lower than any other known semiconducting borophenes. By considering not only the band alignments but also the lattice matches between semiconducting and metallic borophenes, we then have theoretically proposed several device models of fully boron-sheet-based 2D FETs. Our work provides beneficial ideas and attempts for discovering novel borophene-based 2D FETs.

Motif based high-throughput structure prediction of superconducting monolayer titanium boride

Two-dimensional boron structures, due to their diverse properties, have attracted great attention because of their potential applications in nanoelectronic devices. A series of TiBn (2 ≤ n ≤ 13) monolayers are efficiently constructed through our motif based method and theoretically investigated through high-throughput first-principles calculations. The configurations are generated based on the motifs of boron dimeric/triangular/quadrilateral fragments and multi-coordinate titanium-centered boron molecular wheels. Besides previously reported TiB4 and TiB9 which were discovered by the global search method, we predict that high symmetry monolayer TiB7 (Cmmm), which is octa-coordinate titanium boride, is dynamically stable. The TiB7 monolayer is a BCS superconductor with a transition temperature Tc of up to 8.3 K. The motif based approach is proved to be efficient in searching stable structures with prior knowledge so that the potentially stable transition metal monolayers can be quickly constructed by using basic cluster motifs. As an efficient way of discovering materials, the method is easily extended to predict other types of materials which have common characteristic patterns in the structure.