Electrical control of single-photon emission in highly charged individual colloidal quantum dots

Off-Normal Polarized Single-Photon Emission with Anisotropic Holography Metasurfaces

Solid-state quantum emitters (QEs) with arbitrary direction emission and well-defined polarization are critical for scalable single-photon sources and quantum information processing. However, the design strategy for on-chip generation of off-normal photon emission with high-purity polarization characteristics has so far remained elusive. Here, we introduce the anisotropic holography metasurfaces for efficiently manipulating the emission direction and polarization of QE. The proposed method offers a flexible way to realize phase matching in surface plasmon scattering with spatially varying filling factors and provides an efficient route for designing advanced QE-coupled metasurfaces. By nonradiatively coupling nanodiamonds with metasurfaces, we experimentally demonstrate on-chip generation of well-collimated single-photon emission propagating along off-normal directions (i.e., 20° and 30°) featuring a divergence angle lower than 2.5°. The experimental average degree of linear polarization attains up to >0.98, thereby revealing markedly high polarization purity. This study facilitates applications of QEs in the deployment of integrated quantum networks.

Electronic States of Single Perovskite Quantum Dots in Weak and Strong Interaction Regimes: Implications in Electrically Pumped Quantum Emitters

We investigate the effect of Coulomb interactions on the electronic states of a single perovskite quantum dot (PQD), CsPbBr3, through scanning tunneling microscopy/spectroscopy (STM/S). Under a weak interaction regime, where the time-averaged occupation of electrons in a PQD remains zero, the peaks observed in the differential tunneling conductance (dI/dV) spectrum correspond to the single-particle density of states (DOS) without any electron-electron correlation. However, with a shorter tunnel distance between the STM tip and PQD, additional electrons are trapped in the QD, leading to a strong interaction regime with well-defined electronic fine structures due to the lifting of spin degeneracy in the conduction bands. Interestingly, we observe that the strong Coulomb interaction can modify the spin-orbit coupling (SOC) strength in the PQDs. We have concluded that the energy levels under a strong electron-electron interaction regime are of utmost importance since they will be applicable to electrically pumped PQD-based single photon quantum emitters.

Ligand Controls Excited Charge Carrier Dynamics in Metal-Rich CdSe Quantum Dots: Computational Insights

Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron-phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd28Se17X22 QDs (X = HCOO-, OH-, Cl-, and SH-) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron-phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd28Se17(OH)22 has the fastest nonradiative recombination rate due to the strongest electron-phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron-phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.

Robust consistent single quantum dot strong coupling in plasmonic nanocavities

Strong coupling between a single quantum emitter and an optical cavity (at rate Ω) accesses fundamental quantum optics and provides an essential building block for photonic quantum technologies. However, the minimum mode volume of conventional dielectric cavities restricts their operation to cryogenic temperature for strong coupling. Here we harness surface self-assembly to make deterministic strong coupling at room temperature using CdSe/CdS quantum dots (QDs) in nanoparticle-on-mirror (NPoM) plasmonic nanocavities. We achieve a fabrication yield of ~70% for single QD strong coupling by optimizing their size and nano-assembly. A clear and reliable Rabi splitting is observed both in the scattering of each nanocavity and their photoluminescence, which are however not equal. Integrating these quantum elements with electrical pumping allows demonstration of strong coupling in their electroluminescence. This advance provides a straightforward way to achieve practical quantum devices at room temperature, and opens up exploration of their nonlinear, electrical, and quantum correlation properties.

Weakly Confined Semiconductor Nanocrystals Excel in Photochemical and Optoelectronic Properties: Evidence from Single-Dot Studies

Single-molecule spectroscopy offers state-resolved measurements on charge-transfer reactions of single semiconductor nanocrystals, leading to the discovery of up to six single-charge transfer reactions with seven transient states for single CdSe/CdS core/shell nanocrystals with water (or oxygen) as the hole (or electron) acceptors. Kinetic rates of three photoinduced single-hole transfer reactions decrease significantly upon increasing the number of excess electrons in a nanocrystal, mainly due to efficient Auger nonradiative recombination of the charged single excitons. Conversely, the kinetic rates of three single-electron transfer reactions of an unexcited nanocrystal increase proportionally to the number of excess electrons in it. Results here reveal that charge-transfer reactions of nanocrystals, at the center of nearly all their functions, could only be deciphered at a state-resolved level on a single nanocrystal. Size-dependent studies validate the weakly confined semiconductor nanocrystals, instead of strongly confined ones (quantum dots), as optimal candidates for photochemical and optoelectronic applications.

Highly Efficient MAPbI3-Based Quantum Dots Exhibiting Unusual Nonblinking Single Photon Emission at Room Temperature

Highly emissive semiconductor nanocrystals, or so-called quantum dots (QDs) possess a variety of applications from displays and biology labeling, to quantum communication and modern security. Though ensembles of QDs have already shown very high photoluminescent quantum yields (PLQYs) and have been widely utilized in current optoelectronic products, QDs that exhibit high absorption cross-section, high emission intensity, and, most important, nonblinking behavior at single-dot level have long been desired and not yet realized at room temperature. In this work, infrared-emissive MAPbI3-based halide perovskite QDs is demonstrated. These QDs not only show a ≈100% PLQY at the ensemble level but also, surprisingly, at the single-dot level, display an extra-large absorption cross-section up to 1.80 × 10-12 cm2 and non-blinking single photon emission with a high single photon purity of 95.3%, a unique property that is extremely rare among all types of quantum emitters operated at room temperature. An in-depth analysis indicates that neither trion formation nor band-edge carrier trapping is observed in MAPbI3 QDs, resulting in the suppression of intensity blinking and lifetime blinking. Fluence-dependent transient absorption measurements reveal that the coexistence of non-blinking behavior and high single photon purity in these perovskite QDs results from a significant repulsive exciton-exciton interaction, which suppresses the formation of biexciton, and thus greatly reduces photocharging. The robustness of these QDs is confirmed by their excellent stability under continuous 1 h electron irradiation in high-resolution transmission electron microscope inspection. It is believed that these results mark an important milestone in realizing nonblinking single photon emission in semiconductor QDs.

Ultrafast and Bright Quantum Emitters from the Cavity-Coupled Single Perovskite Nanocrystals

Perovskite nanocrystals (NCs) have attracted increasing interest in the realization of single-photon emitters owing to their ease of chemical synthesis, wide spectral tunability, fast recombination rate constant, scalability, and high quantum yield. However, the integration of a single perovskite NC into a photonic structure has yet to be accomplished. In this work, the integration of a highly stable individual zwitterionic ligand-based CsPbBr3 perovskite NC with a circular Bragg grating (CBG) is successfully demonstrated. The far-field radiation pattern of the NC inside the CBG exhibits high directionality toward a low azimuthal angle, which is consistent with the simulation results. A 5.4-fold enhancement in brightness is observed due to an increase in collection efficiency. Moreover, a 1.95-fold increase in the recombination rate constant is achieved. This study offers ultrafast (<100 ps) single-photon emission and an improved brightness of perovskite NCs, which are critical factors for practical quantum optical applications.

Gate Controlled Excitonic Emission in Quantum Dot Thin Films

Formation of charged trions is detrimental to the luminescence quantum efficiency of colloidal quantum dot (QD) thin films as they predominantly undergo nonradiative recombination. In this regard, control of charged trion formation is of interest for both fundamental characterization of the quasi-particles and performance optimization. Using CdSe/CdS QDs as a prototypical material system, here we demonstrate a metal-oxide-semiconductor capacitor based on QD thin films for studying the background charge effect on the luminescence efficiency and lifetime. The concentration ratio of the charged and neutral quasiparticles in the QDs is reversibly controlled by applying a gate voltage, while simultaneous steady-state and time-resolved photoluminescence measurements are performed. Notably, the photoluminescence intensity is modulated by up to 2 orders of magnitude with a corresponding change in the effective lifetime. In addition, chip-scale modulation of brightness is demonstrated, where the photoluminescence is effectively turned on and off by the gate, highlighting potential applications in voltage-controlled electrochromics.

Optimizing ZnO-Quantum Dot Interface with Thiol as Ligand Modification for High-Performance Quantum Dot Light-Emitting Diodes

As the electron transport layer in quantum dot light-emitting diodes (QLEDs), ZnO suffers from excessive electrons that lead to luminescence quenching of the quantum dots (QDs) and charge-imbalance in QLEDs. Therefore, the interplay between ZnO and QDs requires an in-depth understanding. In this study, DFT and COSMOSL simulations are employed to investigate the effect of sulfur atoms on ZnO. Based on the simulations, thiol ligands (specifically 2-hydroxy-1-ethanethiol) to modify the ZnO nanocrystals are adopted. This modification alleviates the excess electrons without causing any additional issues in the charge injection in QLEDs. This modification strategy proves to be effective in improving the performance of red-emitting QLEDs, achieving an external quantum efficiency of over 23% and a remarkably long lifetime T95 of >12 000 h at 1000 cd m-2 . Importantly, the relationship between ZnO layers with different electronic properties and their effect on the adjacent QDs through a single QD measurement is investigated. These findings show that the ZnO surface defects and electronic properties can significantly impact the device performance, highlighting the importance of optimizing the ZnO-QD interface, and showcasing a promising ligand strategy for the development of highly efficient QLEDs.

Multiple channelling single-photon emission with scattering holography designed metasurfaces

Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves. Using holographic metasurfaces fabricated around nanodiamonds with single Ge vacancy centres, we experimentally demonstrate on-chip integrated efficient generation of two well-collimated single-photon beams propagating along different 15° off-normal directions with orthogonal linear polarizations.

Ligand-Induced Symmetry Breaking as the Origin of Multiexponential Photoluminescence Decay in CdSe Quantum Dots

The bright photoluminescence (PL) of colloidal CdSe quantum dots (QDs) makes them interesting for optical applications. For most of them, well-defined PL properties, dominated by a single excitonic state, are required. However, in many PL experiments with QD ensembles, multiexponential decay was observed. On the basis of spin-orbit density functional theory and screened configuration interaction calculations, we show that highly symmetric and defect-free CdSe QDs with diameters of 1.7 and 2.0 nm possess a multiexponential low-temperature PL at the single-dot level. This is a consequence of ligand-induced symmetry breaking with a subsequent rearrangement of the lowest eight excitonic states in two sets of four singly degenerate excitonic states. For each set, the lowest state is dark and the other three are bright. We find that the splitting between the sets can be modified by the coverage and choice of the ligand, which facilitates the engineering of the PL properties of CdSe QDs.

Single-Photon Emitting Arrays by Capillary Assembly of Colloidal Semiconductor CdSe/CdS/SiO2 Nanocrystals

The controlled placement of colloidal semiconductor nanocrystals (NCs) onto planar surfaces is crucial for scalable fabrication of single-photon emitters on-chip, which are critical elements of optical quantum computing, communication, and encryption. The positioning of colloidal semiconductor NCs such as metal chalcogenides or perovskites is still challenging, as it requires a nonaggressive fabrication process to preserve the optical properties of the NCs. In this work, periodic arrays of 2500 nanoholes are patterned by electron beam lithography in a poly(methyl methacrylate) (PMMA) thin film on indium tin oxide/glass substrates. Colloidal core/shell CdSe/CdS NCs, functionalized with a SiO₂ capping layer to increase their size and facilitate deposition into 100 nm holes, are trapped with a close to optimal Poisson distribution into the PMMA nanoholes via a capillary assembly method. The resulting arrays of NCs contain hundreds of single-photon emitters each. We believe this work paves the way to an affordable, fast, and practical method for the fabrication of nanodevices, such as single-photon-emitting light-emitting diodes based on colloidal semiconductor NCs.

Purifying single photon emission from giant shell CdSe/CdS quantum dots at room temperature

Giant shell CdSe/CdS quantum dots are bright and flexible emitters, with near-unity quantum yield and suppressed blinking, but their single photon purity is reduced by efficient multiexcitonic emission. We report the observation, at the single dot level, of a large blueshift of the photoluminescence biexciton spectrum (24 ± 5 nm over a sample of 32 dots) for pure-phase wurtzite quantum dots. By spectral filtering, we demonstrate a 2.3 times reduction of the biexciton quantum yield relative to the exciton emission, while preserving as much as 60% of the exciton single photon emission, thus improving the purity from g₂(0) = 0.07 ± 0.01 to g₂(0) = 0.03 ± 0.01. At a larger pump fluency, spectral purification is even more effective with up to a 6.6 times reduction in g₂(0), which is due to the suppression of higher order excitons and shell states experiencing even larger blueshifts. Our results indicate the potential for the synthesis of engineered giant shell quantum dots, with further increased biexciton blueshifts, for quantum optical applications requiring both high purity and brightness.

Deterministic Quantum Light Arrays from Giant Silica-Shelled Quantum Dots

Colloidal quantum dots (QDs) are promising candidates for single-photon sources with applications in photonic quantum information technologies. Developing practical photonic quantum devices with colloidal materials, however, requires scalable deterministic placement of stable single QD emitters. In this work, we describe a method to exploit QD size to facilitate deterministic positioning of single QDs into large arrays while maintaining their photostability and single-photon emission properties. CdSe/CdS core/shell QDs were encapsulated in silica to both increase their physical size without perturbing their quantum-confined emission and enhance their photostability. These giant QDs were then precisely positioned into ordered arrays using template-assisted self-assembly with a 75% yield for single QDs. We show that the QDs before and after assembly exhibit antibunching behavior at room temperature and their optical properties are retained after an extended period of time. Together, this bottom-up synthetic approach via silica shelling and the robust template-assisted self-assembly offer a unique strategy to produce scalable quantum photonics platforms using colloidal QDs as single-photon emitters.

Spectroelectrochemistry of CdSe/CdxZn1-xS Nanoplatelets

We report an unexpected enhancement of photoluminescence (PL) in CdSe-based core/shell nanoplatelets (NPLs) upon electrochemical hole injection. Moderate hole doping densities induce an enhancement of more than 50% in PL intensity. This is accompanied by a narrowing and blue-shift of the PL spectrum. Simultaneous, time-resolved PL experiments reveal a slower luminescence decay. Such hole-induced PL brightening in NPLs is in stark contrast to the usual observation of PL quenching of CdSe-based quantum dots following hole injection. We propose that hole injection removes surface traps responsible for the formation of negative trions, thereby blocking nonradiative Auger processes. Continuous photoexcitation causes the enhanced PL intensity to decrease back to its initial level, indicating that photocharging is a key step leading to loss of PL luminescence during normal aging. Modulating the potential can be used to reversibly enhance or quench the PL, which enables electro-optical switching.

CdS Quantum Dots as Potent Photoreductants for Organic Chemistry Enabled by Auger Processes

Strong reducing agents (<-2.0 V vs saturated calomel electrode (SCE)) enable a wide array of useful organic chemistry, but suffer from a variety of limitations. Stoichiometric metallic reductants such as alkali metals and SmI₂ are commonly employed for these reactions; however, considerations including expense, ease of use, safety, and waste generation limit the practicality of these methods. Recent approaches utilizing energy from multiple photons or electron-primed photoredox catalysis have accessed reduction potentials equivalent to Li⁰ and shown how this enables selective transformations of aryl chlorides via aryl radicals. However, in some cases, low stability of catalytic intermediates can limit turnover numbers. Herein, we report the ability of CdS nanocrystal quantum dots (QDs) to function as strong photoreductants and present evidence that a highly reducing electron is generated from two consecutive photoexcitations of CdS QDs with intermediate reductive quenching. Mechanistic experiments suggest that Auger recombination, a photophysical phenomenon known to occur in photoexcited anionic QDs, generates transient thermally excited electrons to enable the observed reductions. Using blue light-emitting diodes (LEDs) and sacrificial amine reductants, aryl chlorides and phosphate esters with reduction potentials up to -3.4 V vs SCE are photoreductively cleaved to afford hydrodefunctionalized or functionalized products. In contrast to small-molecule catalysts, QDs are stable under these conditions and turnover numbers up to 47 500 have been achieved. These conditions can also effect other challenging reductions, such as tosylate protecting group removal from amines, debenzylation of benzyl-protected alcohols, and reductive ring opening of cyclopropane carboxylic acid derivatives.

Electrical control of biexciton Auger recombination in single CdSe/CdS nanocrystals

The Auger recombination effect is strongly enhanced in semiconductor nanocrystals due to the quantum confinement, and various strategies in chemical synthesis have been employed so far to suppress this nonradiative decay pathway of multiple excitons. Here we apply external electric fields on single CdSe/CdS giant nanocrystals at room temperature, showing that the biexciton Auger and single-exciton radiative rates can be averagely decreased by ∼40 and ∼10%, respectively. In addition to a reduced overlap of the electron-hole wavefunctions, the large decrease of biexciton Auger rate could be contributed by the enhanced exciton-exciton repulsion, while the electron-hole exchange interaction might be weakened to cause the relatively small decrease of the single-exciton radiative rate. The above findings have thus proved that the external electric field can serve as a post-synthetic knob to tune the exciton recombination dynamics in semiconductor nanocrystals towards their efficient applications in various optoelectronic devices.

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe₂ to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 10⁴ times brighter photoluminescence than in WSe₂ placed on low-refractive-index SiO₂ pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.

Single photon emitters (SPEs) in 2D semiconductors can be deterministically positioned using localized strain induced by underlying nanostructures. Here, the authors show SPE coupling in WSe₂ to GaP dielectric nanoantennas, substantially increasing quantum efficiency and photoluminescence brightness.

Enhanced Emission from Bright Excitons in Asymmetrically Strained Colloidal CdSe/CdxZn1-xSe Quantum Dots

Colloidal CdSe quantum dots (QDs) designed with a high degree of asymmetric internal strain have recently been shown to host a number of desirable optical properties including subthermal room-temperature line widths, suppressed spectral diffusion, and high photoluminescence (PL) quantum yields. It remains an open question, however, whether they are well-suited for applications requiring emission of identical single photons. Here we measure the low-temperature PL dynamics and the polarization-resolved fluorescence line narrowing spectra from ensembles of these strained QDs. Our spectroscopy reveals the radiative recombination rates of bright and dark excitons, the relaxation rate between the two, and the energy spectra of the quantized acoustic phonons in the QDs that can contribute to relaxation processes. In comparison to conventional colloidal CdSe/ZnS core/shell QDs, we find that in asymmetrically strained CdSe QDs over six times more light is emitted directly by the bright exciton. These results are therefore encouraging for the prospects of chemically synthesized colloidal QDs as emitters of single indistinguishable photons.

Exciton-Photonics: From Fundamental Science to Applications

Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned an advanced area of research that focuses on engineering, imaging, and modulating the coupling between excitons and photons, resulting in the formation of hybrid quasiparticles termed exciton-polaritons. This advanced area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and previous investigations of the optical properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is given to recent advances with critical evaluation of the bottlenecks that plague various materials toward practical device implementations including quantum light sources. Our review highlights a growing need for excitonic material development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications.