Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

Ferroelectric Hf0.5Zr0.5O2 with Enhanced Intermediate Polarization: A Platform for Neuromorphic and Logic-in-Memory Computing

Ferroelectric materials, known for their nonvolatile and reversible polarization states, are emerging as promising candidates for innovative computing paradigms such as neuromorphic computing and logic-in-memory (LiM) architectures. Their polarization dynamics in response to external stimuli closely emulates biological synapses, a feature crucial for learning and adaptation in neural networks. Achieving multiple intermediate states between fully polarized states is critical for energy-efficient computation. However, the exploitation of switching properties for weight modulation in ferroelectric materials remain underexplored. In this study, we demonstrate improved intermediate and cumulative polarization levels in Hf0.5Zr0.5O2 (HZO) through phase engineering. Consequently, HZO-based synaptic ferroelectric field-effect transistors (FeFETs) achieve a wide range of synaptic weights (up to 8 bits) with remarkable linearity, resulting in high classification accuracies of 98% for MNIST and 88% for Fashion-MNIST in neuromorphic computing tasks. Additionally, we present reconfigurable in-memory NOR and NAND logic functions along with 3-bit logic state generation using a multigate FeFET, demonstrating the potential for LiM operations. This work underscores the successful cointegration of neuromorphic and LiM computing functionalities within a unified platform, addressing key challenges in developing efficient and versatile computing architectures. Our findings highlight the potential of HZO to enable next-generation computing systems that seamlessly integrate learning and logic capabilities.

Self-Restoration of a Wrinkled Hf0.5Zr0.5O2 Ferroelectric Membrane

Ferroelectric oxides are generally prone to brittle deformation, which impedes their applicability in flexible devices. Using a damage-free peel-off process, we successfully synthesized wrinkled 10 nm thick membranes of zirconium-doped hafnium oxide Hf0.5Zr0.5O2 (HZO). We studied their self-restoration dynamics via in situ scanning probe microscopy. Substantial deformations were induced as the tip descended by applying and sustaining a predefined static force at the crest of the wrinkled membrane. The membrane was fully restored to its original wrinkled state within a specific force range, with no observed damage after force removal. The membrane demonstrated self-restoration even after forces exceeding 100 nN, which completely collapsed the wrinkles, highlighting the exceptional flexibility of these freestanding HZO membranes─an uncommon property among functional oxides. Combining phase-field simulations, we observed the emergence of a region exhibiting continuous variation in polarization intensity within the strained area. The formation of this specific domain structure plays a pivotal role in the self-restoration behavior of the freestanding ferroelectric membranes. This self-restoration capability is essential for the long-term stability of flexible electronic devices, such as sensors, energy harvesters, and electronic skins.

Unlocking the phase evolution of the hidden non-polar to ferroelectric transition in HfO2-based bulk crystals

The discovery of ferroelectricity in hafnium dioxide (HfO2) thin films over the past decade has revolutionized the landscape of ferroelectrics, providing a promising candidate for next-generation ferroelectrics beyond the constraints of Moore's law. However, the underlying formation mechanism of their metastable and volatile ferroelectric phase is under debate. Herein, we successfully grow HfO2-based (Lu:Hf1-xZrxO2) bulk crystals and gain a comprehensive understanding of the non-polar to ferroelectric phase evolution. We achieve a controllable polymorphic engineering by elucidating the synergistic modulation of co-doped Lu3+ and Zr4+ ions. Our investigation unveils the intricate local structural transitions involved in the formation of the ferroelectric orthorhombic Pbc21 phase from the metastable tetragonal phase. We also establish a controllable tetragonal-to-orthorhombic transformation route, effectively improving the ferroelectric phase component within bulk crystals. Our findings will advance the comprehension of ferroelectric mechanisms in fluorite-structured materials, paving the way for significant strides in developing HfO2-based nonvolatile electronic and photonic devices.

Compressive Strain-Induced Uphill Hydrogen Distribution in Strontium Ferrite Films

Hydrogen incorporation into metal oxides enhances their electrochemical properties, making them highly suitable for various energy conversion applications. The controlled distribution of hydrogen ions in material systems and their conduction at elevated temperatures have garnered significant attention for various energy storage and environmental monitoring applications, including fuel cells, smart windows, and sensor technologies. In this work, cost-effective, high-concentration hydrogen-doped SrFeO3-δ (HSrFeO3-δ) films were prepared under ambient conditions by treating Al(s)|SrFeO3-δ(s) films with KOH(aq), utilizing electron-proton codoping to investigate hydrogen distribution. The uphill hydrogen distributions in SrFeO3-δ films with compressive strain, in contrast to the density gradient behavior under tensile strain, suggest the fundamental role of the strain states in the hydrogen accommodation. Compressively strained films with a rich Al source follow an anomalous uphill feature of hydrogen distribution, highlighting their potential use as electrolyte for fuel cells. The strain significantly influences the structure, chemical lattice coupling, and consequently the ionic transport in SrFeO3-δ. Ionic conductivity measurements reveal that compressively strained HSrFeO3-δ films with uphill hydrogen distributions exhibit a significant ionic conductivity of 0.189 S/cm at 413 K, with an activation energy of approximately 0.29 eV, making them suitable for low-temperature electrochemical applications. These findings provide a promising approach for tuning material properties and valuable insights for building iontronic devices.

Enhancing Nonenzymatic Glucose Detection Through Cobalt-Substituted Hafnia

Engineered defect chemistry in ultrathin (≈5 nm) hafnia through substitutional cobalt (HCO) is investigated for selective glucose sensing. Thin films of HCO, grown using chemical solution deposition (CSD)-traditionally used to grow thick films-on silicon, show significant glucose sensing activity and undergo monoclinic to orthorhombic phase transformation. The presence of multivalent cobalt in hafnia, with oxygen vacancies in proximity, selectively oxidizes glucose with minimal interference from ascorbic acid, dopamine, and uric acid. Theoretical investigations reveal that these oxygen vacancies create a shallow donor level that significantly enhances electrocatalytic activity by promoting charge transfer to the conduction band. This results in considerable selectivity, repeatability, and reproducibility in sensing characteristics. These findings highlight the technological importance of using CSD for thin films, paving the way for ultrathin CSD-processed HCOs as potential candidates for selective glucose sensing applications.

Ferroelectricity in Orthorhombic Zirconia Thin Films

Ferroelectric fluorite oxides such as hafnium (HfO2)-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO2)-based fluorite materials, which have the same structure as HfO2 and more abundant resources and lower cost of raw materials, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization (Pr) of ∼15 μC/cm2 in orthorhombic ZrO2 thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO2 thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.

Unexpected Large Electrostatic Gating by Pyroelectric Charge Accumulation

Pyroelectricity refers to the accumulation of charges due to changes in the spontaneous polarization of ferroelectric materials when subjected to temperature variations. Typically, these pyroelectric charges are considered unstable and dissipate quickly through interactions with the external environment. Consequently, the pyroelectric effect has been largely overlooked in ferroelectric field-effect transistors. In this work, we leverage the van der Waals interface of hBN to achieve a substantial and long-term electrostatic gating effect in graphene devices via the pyroelectric properties of a ferroelectric LiNbO3 substrate. Upon cooling, the polarization change in LiNbO3 induces high doping concentrations of up to 1013 cm-2 in the adjacent graphene. Through a combination of transport measurements and noncontact techniques, we demonstrate that the pyroelectric charge accumulation, as well as its enhancement in electric fields, are responsible for this unexpectedly high doping level. Our findings introduce a novel mechanism for voltage-free electrostatic gating control with long retention.

Mapping of the full polarization switching pathways for HfO2 and its implications

The discovery of ferroelectric phases in HfO2 offers insights into ferroelectricity. Its unique fluorite structure and complex polarization switching pathways exhibit distinct characteristics, challenging conventional analysis methods. Combining group theory and first-principles calculations, we identify numerous unconventional electric polarization switching pathways in HfO2 with energy barriers of 0.32 to 0.57 eV as a function of the different shift in the suboxygen lattices. In total, we identify 47 switching pathways for the orthorhombic phase, corresponding to the left cosets of the [Formula: see text] group with [Formula: see text] group. Contrary to the conception that the tetracoordinated oxygen (OIV) layers are inactive, our result demonstrates that both the tricoordinated oxygen (OIII) and OIV can be displaced, leading to polarization switching along any axial direction. The multiple switching pathways in HfO2 result in both 180° polarization reversal and the formation of 90° domains observed experimentally. Calculations show that specific switching pathways depend on the orientation of the applied electric field relative to the HfO2 growth surface. This allows HfO2 to automatically adjust the in-plane polarization direction under an out-of-plane electric field, thereby maximizing the out-of-plane component and contributing to the wake-up process. These findings redefine the roles of OIII and OIV layers, clarify unconventional switching pathways, and enhance our understanding of electric field response mechanisms, wake-up, and fatigue in ferroelectrics.

High-κ monocrystalline dielectrics for low-power two-dimensional electronics

The downscaling of complementary metal-oxide-semiconductor technology has produced breakthroughs in electronics, but more extreme scaling has hit a wall of device performance degradation. One key challenge is the development of insulators with high dielectric constant, wide bandgap and high tunnel masses. Here, we show that two-dimensional monocrystalline gadolinium pentoxide, which is devised through combining particle swarm optimization algorithm and theoretical calculations and synthesized via van der Waals epitaxy, could exhibit a high dielectric constant of ~25.5 and a wide bandgap simultaneously. A desirable equivalent oxide thickness down to 1 nm with an ultralow leakage current of ~10-4 A cm-2 even at 5 MV cm-1 is achieved. The molybdenum disulfide transistors gated by gadolinium pentoxide exhibit high on/off ratios over 108 and near-Boltzmann-limit subthreshold swing at an operation voltage of 0.5 V. We also constructed inverter circuits with high gain and nanowatt power consumption. This reliable approach to integrating ultrathin monocrystalline insulators paves the way to future nanoelectronics.

Stabilizing Schottky-to-Ohmic Switching in HfO2-Based Ferroelectric Films via Electrode Design

The discovery of ferroelectric phases in HfO2-based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky-to-Ohmic transition (SOT) observed in devices consisting of ultrathin epitaxial ferroelectric Hf0.93Y0.07O2 (YHO) films deposited on La0.67Sr0.33MnO3-buffered Nb-doped SrTiO3 (NbSTO|LSMO) with Ti|Au top electrodes. These findings indicate combined filamentary RS and ferroelectric switching occurs in devices with designed electrodes, having an ON/OFF ratio of over 100 during about 105 cycles. Transport measurements of modified device stacks show no change in SOT when the ferroelectric YHO layer is replaced with an equivalent hafnia-based layer, Hf0.5Zr0.5O2 (HZO). However, incomplete SOT is observed for variations in the top electrode thickness or material, as well as LSMO electrode thickness. This underscores the importance of employing oxygen-reactive electrodes and a bottom electrode with reduced conductivity to stabilize SOT. These findings provide valuable insights for enhancing the performance of ferroelectric RS devices through integration with filamentary RS mechanism.

Engineering Nonvolatile Polarization in 2D α-In2Se3/α-Ga2Se3 Ferroelectric Junctions

The advent of two-dimensional (2D) ferroelectrics offers a new paradigm for device miniaturization and multifunctionality. Recently, 2D α-In2Se3 and related III-VI compound ferroelectrics manifest room-temperature ferroelectricity and exhibit reversible spontaneous polarization even at the monolayer limit. Here, we employ first-principles calculations to investigate group-III selenide van der Waals (vdW) heterojunctions built up by 2D α-In2Se3 and α-Ga2Se3 ferroelectric (FE) semiconductors, including structural stability, electrostatic potential, interfacial charge transfer, and electronic band structures. When the FE polarization directions of α-In2Se3 and α-Ga2Se3 are parallel, both the α-In2Se3/α-Ga2Se3 P↑↑ (UU) and α-In2Se3/α-Ga2Se3 P↓↓ (NN) configurations possess strong built-in electric fields and hence induce electron-hole separation, resulting in carrier depletion at the α-In2Se3/α-Ga2Se3 heterointerfaces. Conversely, when they are antiparallel, the α-In2Se3/α-Ga2Se3 P↓↑ (NU) and α-In2Se3/α-Ga2Se3 P↑↓ (UN) configurations demonstrate the switchable electron and hole accumulation at the 2D ferroelectric interfaces, respectively. The nonvolatile characteristic of ferroelectric polarization presents an innovative approach to achieving tunable n-type and p-type conductive channels for ferroelectric field-effect transistors (FeFETs). In addition, in-plane biaxial strain modulation has successfully modulated the band alignments of the α-In2Se3/α-Ga2Se3 ferroelectric heterostructures, inducing a type III-II-III transition in UU and NN, and a type I-II-I transition in UN and NU, respectively. Our findings highlight the great potential of 2D group-III selenides and ferroelectric vdW heterostructures to harness nonvolatile spontaneous polarization for next-generation electronics, nonvolatile optoelectronic memories, sensors, and neuromorphic computing.

Toward quantitative thermoelectric characterization of (nano)materials by in-situ transmission electron microscopy

We explore the possibility to perform an in-situ transmission electron microscopy (TEM) thermoelectric characterization of materials. A differential heating element on a custom in-situ TEM microchip allows to generate a temperature gradient across the studied materials, which are simultaneously measured electrically. A thermovoltage was induced in all studied devices, whose sign corresponds to the sign of the Seebeck coefficient of the tested materials. The results indicate that in-situ thermoelectric TEM studies can help to profoundly understand fundamental aspects of thermoelectricity, which is exemplary demonstrated by tracking the thermovoltage during in-situ crystallization of an amorphous Ge thin film. We propose an improved in-situ TEM microchip design, which should facilitate a full quantitative measurement of the induced temperature gradient, the electrical and thermal conductivities, as well as the Seebeck coefficient. The benefit of the in-situ approach is the possibility to directly correlate the thermoelectric properties with the structure and chemical composition of the entire studied device down to the atomic level, including grain boundaries, dopants or crystal defects, and to trace its dynamic evolution upon heating or during the application of electrical currents.

Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography

Interfaces in heterostructures play a major role in the functionality of electronic devices. Phenomena such as charge trapping/detrapping at interfaces under electric field affect the dynamics of metal/oxide/metal capacitors and metal/oxide/semiconductor transistors used for memory and logic applications. Charge traps are also key for the stabilization of a ferroelectric polarization and its ability to switch in ferroelectric devices such as ferroelectric tunnel junctions (FTJs). However, electric-field induced charging phenomena remain unclear even in conventional dielectric heterostructures due to a lack of direct measurement methods. Here, it is shown how operando off-axis electron holography can be used to quantify the charges trapped at the dielectric/dielectric interfaces as well as metal/dielectric interfaces in HfO2- and Al2O3-based nanocapacitors. By mapping the electrostatic potential at sub-nanometer spatial resolution while applying a bias, it is demonstrated that these interfaces present a high density of trapped charges, which strongly influence the electric field distribution within the device. The unprecedented sensitivity of the electron holography experiments coupled with numerical simulations highlights for the first time the linear relationship between the trapped charges at each interface and the applied bias, and the effect of the trapped charges on the local electrical behavior.

Support-Based Transfer and Contacting of Individual Nanomaterials for In Situ Nanoscale Investigations

Although in situ transmission electron microscopy (TEM) of nanomaterials has been gaining importance in recent years, difficulties in sample preparation have limited the number of studies on electrical properties. Here, a support-based preparation method of individual 1D and 2D materials is presented, which yields a reproducible sample transfer for electrical investigation by in situ TEM. A mechanically rigid support grid facilitates the transfer and contacting to in situ chips by focused ion beam with minimum damage and contamination. The transfer quality is assessed by exemplary specimens of different nanomaterials, including a monolayer of WS2. Possible studies concern the interplay between structural properties and electrical characteristics on the individual nanomaterial level as well as failure analysis under electrical current or studies of electromigration, Joule heating, and related effects. The TEM measurements can be enriched by additional correlative microscopy and spectroscopy carried out on the identical object with techniques that allow a characterization with a spatial resolution in the range of a few microns. Although developed for in situ TEM, the present transfer method is also applicable to transferring nanomaterials to similar chips for performing further studies or even for using them in potential electrical/optoelectronic/sensing devices.

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Hafnium-based binary oxides are essential for fabricating nanoscale high-density ferroelectric memory devices. However, effective strategies to control and improve their thin-film single crystallinity and metastable ferroelectricity remain elusive, hindering potential applications. Here, using NdGaO3 (NGO) substrates with four crystalline orientations, we report a systematic study of the structural characterizations and ferroelectric properties of epitaxial Hf0.5Zr0.5O2 (HZO) films, demonstrating orientation-controlled high crystallinity and enhanced ferroelectric properties. HZO films grown on NGO(001) and NGO(110) substrates exhibit relatively low crystallinity and a significant presence of the monoclinic phase. In contrast, HZO films grown on NGO(100) and NGO(010) possess high single crystallinity and a dominant ferroelectric phase. These differences are attributed to the surface symmetry of the NGO substrate, which favors the formation of 4- or 2-fold domain configurations. Moreover, the optimized HZO films exhibit a large polarization (2Pr) of ∼50 μC/cm2, enhanced fatigue behavior up to 1011 cycles, improved retention of 2Pr ∼ 40 μC/cm2 after 10 years, and characteristic polarization switching speeds in the submicrosecond range. Our results highlight the importance of modulating the single crystallinity and ferroelectric phase fraction of HfO2-based films to enhance ferroelectric properties, further revealing the potential of epitaxial symmetry engineering.

Depth-Resolved X-Ray Photoelectron Spectroscopy Evidence of Intrinsic Polar States in HfO2-Based Ferroelectrics

The discovery of ferroelectricity in nanoscale hafnia-based oxide films has spurred interest in understanding their emergent properties. Investigation focuses on the size-dependent polarization behavior, which is sensitive to content and movement of oxygen vacancies. Though polarization switching and electrochemical reactions is shown to co-occur, their relationship remains unclear. This study employs X-ray photoelectron spectroscopy with depth sensitivity to examine changes in electrochemical states occurring during polarization switching. Contrasting Hf0.5Zr0.5O2 (HZO) with Hf0.88La0.04Ta0.08O2 (HLTO), a composition with an equivalent structure and comparable average ionic radius, electrochemical states are directly observed for specific polarization directions. Lower-polarization films exhibit more significant electrochemical changes upon switching, suggesting an indirect relationship between polarization and electrochemical state. This research illuminates the complex interplay between polarization and electrochemical dynamics, providing evidence for intrinsic polar states in HfO2-based ferroelectrics.

All-In-One Optoelectronic Transistors for Bio-Inspired Visual System

Visual perception has profound effects on human decision-making and emotional responses. Replicating the functions of the human visual system through device development has been a constant pursuit in recent years. However, to fully simulate the various functions of the human visual system, it is often necessary to integrate multiple devices with different functions, resulting in complex, large-volume device structures and increased power consumption. Here, an optoelectronic transistor with comprehensive visual functions is introduced. By coupling diverse photoreceptive properties of the channel and electrical regulation through charge injection/ferroelectric switching from the hafnium-based gate, the devices can simulate functions of both photoreceptors in the retina and synapses in the visual cortex. A device array is constructed to confirm the perceptual functions of cone and rod cells. Subsequently, color discrimination and recognition for color images are achieved by combining the tunable perception and synapse functions. Then an intelligent traffic judgment system with this all-in-one device is developed, which is capable of making judgments and decisions regarding traffic signals and pedestrian movements. This work provides a potential solution for developing compact and efficient devices for the next-generation bio-inspired visual system.

Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing

Ferroelectric (FE) materials are key to advancing electronic devices owing to their non-volatile properties, rapid state-switching abilities, and low-energy consumption. FE-based devices are used in logic circuits, memory-storage devices, sensors, and in-memory computing. However, the primary challenge in advancing the practical applications of FE-based memory is its reliability. To address this problem, a novel polarization pruning (PP) method is proposed. The PP is designed to eliminate weakly polarized domains by applying an opposite-sign pulse immediately after a program or erase operation. Significant improvements in the reliability of ferroelectric devices are achieved by reducing the depolarization caused by weakly polarized domains and mitigating the fluctuations in the ferroelectric dipole. These enhancements include a 25% improvement in retention, a 50% reduction in read noise, a 45% decrease in threshold voltage variation, and a 72% improvement in linearity. The proposed PP method significantly improves the memory storage efficiency and performance of neuromorphic systems.

Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO2

Determining the stability of complex phases in HfO2 is fundamental to advancing its development and application as ferroelectric material. However, there is ongoing debate regarding whether the ferroelectric phase of HfO2 originates from the orthorhombic phase or the rhombohedral one. Using first-principles calculations with symmetry group and phonon structure analysis, we have derived multiple phase transitions and ferroelectric switching pathways for the rhombohedral phase, and analyzed their static and dynamic stability. The results indicate that the R3m phase, characterized by imaginary frequencies, is a metastable structure that spontaneously transitions to the tetragonal one through multiple pathways. Although the R3 phase lacks imaginary frequencies, the high formation energy due to internal stress leads to all its ferroelectric switching pathways decaying to lower energy orthorhombic or tetragonal phases. Additionally, different Zr distributions in Hf0.5Zr0.5O2 disrupt the spatial group symmetry of the R3 phase, causing it to spontaneously transition to orthorhombic or monoclinic phases. Consequently, both the phase stability and ferroelectric cycling endurance of the rhombohedral phase are inferior to those of the orthorhombic phase for practical applications. These findings are crucial for experimentally determining the phase structure of HfO2 and further developing its ferroelectric mechanisms and potential.

Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties

A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.

Field-Driven Solid-State Defect Control of Bilayer Switching Devices

We develop a framework for controlling and investigating reversible ionic transfer between two solid metal oxides layers by examining field-driven changes in electrical properties of the thin film bilayer oxide system Pr0.1Ce0.9O2/La1.85Ce0.15CuO4 (PCO/LCCO). We show that we can reversibly redistribute oxygen ions by applied voltage in a highly controlled and reversible fashion near ambient temperatures over large oxygen ion activity limits, which, for the first time, is directly interpretable by defect chemical models. This allowed us to determine how defect concentrations in each layer systematically varied with voltage and the subsequent impact on each film's conductance. These results showcase the relevance and applicability of defect chemical models, traditionally considered only at elevated temperatures, to the development of bilayer devices of importance to neuromorphic memory applications. This allows for a more systematic approach for studying and understanding the solid-solid exchange process in electrochemically controlled microelectronic devices. Moreover, our work sets the foundation for the development of large-area field-driven defect-controlled bilayer switching devices with potential application to a broad array of functionally modulated devices.

Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO2 nanocrystals

Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising applications in silicon-compatible non-volatile memories and logic devices. However, the polar orthorhombic (O) phase of fluorite oxides is a metastable phase that is prone to transforming into the ground-state non-polar monoclinic (M) phase, leading to macroscopic ferroelectric degradation. Here we investigate the reversibility of the O-M phase transition in ZrO2 nanocrystals via in situ visualization of the martensitic transformation at the atomic scale. We reveal that the reversible shear deformation pathway from the O phase to the monoclinic-like (M') state, a compressive-strained M phase, is protected by 90° ferroelectric-ferroelastic switching. Nevertheless, as the M' state gradually accumulates localized strain, a critical tensile strain can pin the ferroelastic domain, resulting in an irreversible M'-M strain relaxation and the loss of ferroelectricity. These findings demonstrate the key role of ferroelastic switching in the reversibility of phase transition and also provide a tensile-strain threshold for stabilizing the metastable ferroelectric phase in fluorite oxide thin films.

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer

Ferroelectric hafnia-based thin films have attracted significant interest due to their compatibility with complementary metal-oxide-semiconductor technology (CMOS). Achieving and stabilizing the metastable ferroelectric phase in these films is crucial for their application in ferroelectric devices. Recent research efforts have concentrated on the stabilization of the ferroelectric phase in hafnia-based films and delving into the mechanisms responsible for this stability. In this study, we experimentally demonstrate that stabilization of the ferroelectric phase in Hf_{0.5}Zr_{0.5}O_{2} (HZO) can be controlled by the interfacial charge transfer and the associated hole doping of HZO. Using the meticulously engineered charge transfer between an La_{1-x}Sr_{x}MnO_{3} buffer layer with variable Sr concentration x and an HZO film, we find the optimal x=0.33 that provides the required hole doping of HZO to most efficiently stabilize its ferroelectric phase. Our theoretical modeling reveals that the competition of the hole distribution between the threefold and fourfold coordinated oxygen sites in HZO controls the enhancement or reduction of the ferroelectric phase. Our findings offer a novel strategy to stabilize the ferroelectric phase of hafnia-based films and provide new insights into the development of ferroelectric devices compatible with CMOS.

Approaching the Ideal Linearity in Epitaxial Crystalline-Type Memristor by Controlling Filament Growth

Brain-inspired neuromorphic computing has attracted widespread attention owing to its ability to perform parallel and energy-efficient computation. However, the synaptic weight of amorphous/polycrystalline oxide based memristor usually exhibits large nonlinear behavior with high asymmetry, which aggravates the complexity of peripheral circuit system. Controllable growth of conductive filaments is highly demanded for achieving the highly linear conductance modulation. However, the stochastic behavior of the filament growth in commonly used amorphous/polycrystalline oxide memristor makes it very challenging. Here, the epitaxially grown Hf0.5Zr0.5O2-based memristor with the linearity and symmetry approaching ideal case is reported. A layer of Cu nanoparticles is inserted into epitaxially grown Hf0.5Zr0.5O2 film to form the grain boundaries due to the breaking of the epitaxial growth. By combining with the local electric field enhancement, the growth of filament is confined in the grain boundaries due to the fact that the diffusion of oxygen vacancy in crystalline lattice is more difficult than that in the grain boundaries. Furthermore, the decimal operation and high-accuracy neural network are demonstrated by utilizing the highly linear and multi-level conductance modulation capacity. This method opens an avenue to control the filament growth for the application of resistance random access memory (RRAM) and neuromorphic computing.

Ferroelectric freestanding hafnia membranes with metastable rhombohedral structure down to 1-nm-thick

Two-dimensional freestanding membranes of materials, which can be transferred onto and make interfaces with any material, have attracted attention in the search for functional properties that can be utilized for next-generation nanoscale devices. We fabricated stable 1-nm-thick hafnia membranes exhibiting the metastable rhombohedral structure and out-of-plane ferroelectric polarizations as large as 13 μC/cm2. We also found that the rhombohedral phase transforms into another metastable orthorhombic phase without the ferroelectricity deteriorating as the thickness increases. Our results reveal the key role of the rhombohedral phase in the scale-free ferroelectricity in hafnia and also provide critical insights into the formation mechanism and phase stability of the metastable hafnia. Moreover, ultrathin hafnia membranes enable heterointerfaces and devices to be fabricated from structurally dissimilar materials beyond structural constrictions in conventional film-growth techniques.

Creating Ferroelectricity in Monoclinic (HfO_{2})_{1}/(CeO_{2})_{1} Superlattices

Ferroelectricity in CMOS-compatible hafnia (HfO_{2}) is crucial for the fabrication of high-integration nonvolatile memory devices. However, the capture of ferroelectricity in HfO_{2} requires the stabilization of thermodynamically metastable orthorhombic or rhombohedral phases, which entails the introduction of defects (e.g., dopants and vacancies) and pays the price of crystal imperfections, causing unpleasant wake-up and fatigue effects. Here, we report a theoretical strategy on the realization of robust ferroelectricity in HfO_{2}-based ferroelectrics by designing a series of epitaxial (HfO_{2})_{1}/(CeO_{2})_{1} superlattices. The designed ferroelectric superlattices are defects free, and most importantly, on the base of the thermodynamically stable monoclinic phase of HfO_{2}. Consequently, this allows the creation of superior ferroelectric properties with an electric polarization >25  μC/cm^{2} and an ultralow polarization-switching energy barrier at ∼2.5  meV/atom. Our work may open an avenue toward the fabrication of high-performance HfO_{2}-based ferroelectric devices.

Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond

Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.

Weld-free mounting of lamellae for electrical biasing operando TEM

Recent advances in microelectromechanical systems (MEMS)-based substrates and sample holders for in situ transmission electron microscopy (TEM) are currently enabling exciting new opportunities for the nanoscale investigation of materials and devices. The ability to perform electrical testing while simultaneously capturing the wide spectrum of signals detectable in a TEM, including structural, chemical, and even electronic contrast, represents a significant milestone in the realm of nanoelectronics. In situ studies hold particular promise for the development of Metal-Insulator-Metal (MIM) devices for use in next-generation computing. However, achieving successful device operation in the TEM typically necessitates meticulous sample preparation involving focused ion beam (FIB) systems. Conducting contamination introduced during the FIB thinning process and subsequent attachment of the sample onto a MEMS-based chip remains a formidable challenge. This article delineates an improved FIB-based sample preparation methodology that results in good electrical connectivity and operational functionality across various MIM devices. To exemplify the efficacy of the sample preparation technique, we demonstrate preparation of a clean cross section extracted from a Au/Pt/BaSrTiO3/SrMoO3 tunable capacitor (varactor). The FIB-prepared TEM lamella mounted on a MEMS-based chip showed current levels in the tens of picoamperes range at 0.1 V. Furthermore, the electric response and current density of the TEM lamella device closely align with macro-scale devices. These samples exhibit comparable current densities to their macro-sized counterparts thus validating the sample preparation process and confirming device connectivity. The simultaneous operation and TEM characterization of electronic devices enabled by this process enables direct correlation between device structure and function, which could prove pivotal in the development of new MIM systems.

Deterministic Orientation Control of Ferroelectric HfO2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode

The scale-free ferroelectricity with superior Si compatibility of HfO2 has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal-oxide-semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO2 remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO2 thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO2 through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO2 layer. By stabilizing different polarization directions of HfO2 through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO2.

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1-xMgxO, Al-xScxN, and Bi1-xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.

Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf0.5Zr0.5O2 and Co

Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. Thus, it is highly relevant to study the integration of ferroelectric hafnia into multiferroic systems. In particular, ferroelectricity in hafnia, and the eventual magnetoelectric coupling when ferromagnetic layers are grown atop of it, are very much dependent on quality of interfaces. Since magnetic metals frequently exhibit noticeable reactivity when grown onto oxides, it is expected that ferroelectricity and magnetoelectricity might be reduced in multiferroic hafnia-based structures. In this article, we present excellent ferroelectric endurance and retention in epitaxial Hf0.5Zr0.5O2 films grown on buffered silicon using Co as the top electrode. The crucial influence of a thin Pt capping layer grown on top of Co on the ferroelectric functional characteristics is revealed by contrasting the utilization of Pt-capped Co, non-capped Co and Pt. Magnetic control of the imprint electric field (up to 40% modulation) is achieved in Pt-capped Co/Hf0.5Zr0.5O2 structures, although this does not lead to appreciable tuning of the ferroelectric polarization, as a result of its high stability. Computation of piezoelectric and flexoelectric strain-mediated mechanisms of the observed magnetoelectric coupling reveal that flexoelectric contributions are likely to be at the origin of the large imprint electric field variation.

Giant energy storage and power density negative capacitance superlattices

Dielectric electrostatic capacitors1, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems2-5. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness2,3,6, leaving an opportunity for electrostatic microcapacitors. Here we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO2-ZrO2-based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO2-ZrO2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect7-12, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm-3) (ref. 13). Second, to increase total energy storage, antiferroelectric superlattice engineering14 scales the energy storage performance beyond the conventional thickness limitations of HfO2-ZrO2-based (anti)ferroelectricity15 (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm-2 and 300 kW cm-2, respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy1,16. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors5, which can unlock substantial energy storage and power delivery performance for electronic microsystems17-19.

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.

Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

The discovery of unconventional scale-free ferroelectricity in HfO2-based fluorite thin films has attracted great attention in recent years for their promising applications in low-power logic and nonvolatile memories. The ferroelectricity of HfO2 is intrinsically originated from the widely accepted ferroelectric metastable orthorhombic Pca21 phase. In the last decade, defect-doping/solid solution has shown excellent prospects in enhancing and stabilizing the ferroelectricity via isovalent or aliovalent defect-engineering. Here, the recent advances in defect-engineered HfO2-based ferroelectrics are first reviewed, including progress in mono-ionic doping and mixed ion-doping. Then, the defect-lattice correlation, the point-defect promoted phase transition kinetics, and the interface-engineered dynamic behaviour of oxygen vacancy are summarized. In addition, thin film preparation and ion bombardment doping are summarized. Finally, the outlook and challenges are discussed. A multiscale structural optimization approach is suggested for further property optimization. This article not only covers an overview of the state-of-art advances of defects in fluorite ferroelectrics, but also future prospects that may inspire their further property-optimization via defect-engineering.

Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report electrically controllable ferroelectricity in a Hf0.5Zr0.5O2-based heterostructure with Sr-doped LaMnO3, a mixed ionic-electronic conductor, as an electrode. Electrically reversible extraction and insertion of an oxygen vacancy into Hf0.5Zr0.5O2 are macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multilevel polarization states modulated by the electric field. Our study demonstrates the usefulness of the mixed conductor to repair, create, manipulate, and utilize advanced ferroelectric functionality. Furthermore, the programmed ferroelectric heterostructures with Si-compatible doped hafnia are desirable for the development of future ferroelectric electronics.

Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films

Incorporating hydrogen into transition-metal oxides (TMOs) provides a facile and powerful way to manipulate the performances of TMOs, and thus numerous efforts have been invested in developing hydrogenation methods and exploring the property modulation via hydrogen doping. However, the distribution of hydrogen ions, which is a key factor in determining the physicochemical properties on a microscopic scale, has not been clearly illustrated. Here, focusing on prototypical perovskite oxide (NdNiO3 and La0.67Sr0.33MnO3) epitaxial films, we find that hydrogen distribution exhibits an anomalous "uphill" feature (against the concentration gradient) under tensile strain, namely, the proton concentration enhances upon getting farther from the hydrogen source. Distinctly, under a compressive strain state, hydrogen shows a normal distribution without uphill features. The epitaxial strain significantly influences the chemical lattice coupling and the energy profile as a function of the hydrogen doping position, thus dominating the hydrogen distribution. Furthermore, the strain-(H+) distribution relationship is maintained in different hydrogenation methods (metal-alkali treatment) which is first applied to perovskite oxides. The discovery of strain-dependent hydrogen distribution in oxides provides insights into tailoring the magnetoelectric and energy-conversion functionalities of TMOs via strain engineering.

A ferroelectric fin diode for robust non-volatile memory

Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 1010 cycles, an ON/OFF ratio of ~102, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 104 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.

Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia

Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet studies of ferroelectrics and ionic conductors are often considered separate fields. Based on first-principles calculations and deep-learning-assisted large-scale molecular dynamics simulations, we report ferroelectric-switching-promoted oxygen ion transport in HfO_{2}, a wide-band-gap insulator with both ferroelectricity and ionic conductivity. Applying a unidirectional bias can activate multiple switching pathways in ferroelectric HfO_{2}, leading to polar-antipolar phase cycling that appears to contradict classical electrodynamics. This apparent conflict is resolved by the geometric-quantum-phase nature of electric polarization that carries no definite direction. Our molecular dynamics simulations demonstrate bias-driven successive ferroelectric transitions facilitate ultrahigh oxygen ion mobility at moderate temperatures, highlighting the potential of combining ferroelectricity and ionic conductivity for the development of advanced materials and technologies.

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

The anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in hafnia

The anti-symmetric and anisotropic symmetric exchange interactions between two magnetic dipole moments - responsible for intriguing magnetic textures (e.g., magnetic skyrmions) - have been discovered since last century, while their electric analogues were either hidden for a long time or still not known. It is only recently that the anti-symmetric exchange interactions between electric dipoles was proved to exist (with materials hosting such an interaction being still rare) and the existence of anisotropic symmetric exchange interaction between electric dipoles remains ambiguous. Here, by symmetry analysis and first-principles calculations, we identify hafnia as a candidate material hosting the non-collinear dipole alignments, the analysis of which reveals the anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in this material. Our findings can hopefully deepen the current knowledge of electromagnetism in condensed matter, and imply the possibility of discovering novel states of matter (e.g., electric skyrmions) in hafnia-related materials.

Unconventional Polarization-Switching Mechanism in (Hf, Zr)O_{2} Ferroelectrics and Its Implications

HfO_{2}-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal performance of these devices. Here, a generalized solid-state variable cell nudged elastic band method is employed to predict the switching pathway associated with domain-wall motion in (Hf,Zr)O_{2} ferroelectrics. It is found that the polarization reversal pathway, where threefold coordinated O atoms pass across the nominal unit-cell boundaries defined by the Hf/Zr atomic planes, is energetically more favorable than the conventional pathway where the O atoms do not pass through these planes. This finding implies that the polarization orientation in the orthorhombic Pca2_{1} phase of HfO_{2} and its derivatives is opposite to that normally assumed, predicts the spontaneous polarization magnitude of about 70  μC/cm^{2} that is nearly 50% larger than the commonly accepted value, signifies a positive intrinsic longitudinal piezoelectric coefficient, and suggests growth of ferroelectric domains, in response to an applied electric field, structurally reversed to those usually anticipated. These results provide important insights into the understanding of ferroelectricity in HfO_{2}-based ferroelectrics.

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.

Operando two-terminal devices inside a transmission electron microscope

Advanced nanomaterials are at the core of innovation for the microelectronics industry. Designing, characterizing, and testing two-terminal devices, such as metal-insulator-metal structures, is key to improving material stack design and integration. Electrical biasing within in situ transmission electron microscopy using MEMS-based platforms is a promising technique for nano-characterization under operando conditions. However, conventional focused ion beam sample preparation can introduce parasitic current paths, limiting device performance and leading to overestimated electrical responses. Here we demonstrate connectivity of TEM lamella devices obtained from a novel electrical contacting method based solely on van der Waals forces. This method reduces parasitic leakage currents by at least five orders of magnitude relative to reported preparation approaches. Our methodology enables operation of stack devices inside a microscope with device currents as low as 10 pA. We apply this approach to observe in situ biasing-induced defect formation, providing valuable insights into the behavior of an SrTiO3-based memristor.

Oscar Recalde-Benitez and colleagues report a FIB-based sample preparation process to limit current leakage during operando TEM experiments, thus improving the accuracy of device nanocharacterization under operating conditions. The methodology results in leakage currents that are small compared to device currents, which enables the analysis of operating stack devices inside the microscope.

Interface-type tunable oxygen ion dynamics for physical reservoir computing

Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.

An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors

The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, in the present study, large-grained (>100 nm) La-doped HfO2 (HLO) films are grown directly on silicon by adopting engineered water-diluted precursors with a minimum carbonaceous load and excellent shelf life. The o-phase stabilization is accomplished through a well-distributed La dopant, which generates uniformly populated oxygen vacancies, eliminating the need for oxygen-scavenging electrodes. These oxygen-deficient HLOs show a maximum remnant polarization of 37.6 μC/cm2 (2Pr) without wake-up and withstand large fields (>6.2 MV/cm). Furthermore, CSD-HLO in series with Al2O3 improves switching of MOSFETs (with an amorphous oxide channel) based on the negative capacitance effect. Thus, uniformly distributed oxygen vacancies serve as a standalone factor in stabilizing the o-phase, enabling efficient wake-up-free ferroelectricity without the need for nanostructuring, capping stresses, or oxygen-reactive electrodes.

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.

Power-Efficient Multisensory Reservoir Computing Based on Zr-Doped HfO2 Memcapacitive Synapse Arrays

Hardware implementation tailored to requirements in reservoir computing would facilitate lightweight and powerful temporal processing. Capacitive reservoirs would boost power efficiency due to their ultralow static power consumption but have not been experimentally exploited yet. Here, this work reports an oxide-based memcapacitive synapse (OMC) based on Zr-doped HfO2 (HZO) for a power-efficient and multisensory processing reservoir computing system. The nonlinearity and state richness required for reservoir computing could originate from the capacitively coupled polarization switching and charge trapping of hafnium-oxide-based devices. The power consumption (≈113.4 fJ per spike) and temporal processing versatility outperform most resistive reservoirs. This system is verified by common benchmark tasks, and it exhibits high accuracy (>94%) in recognizing multisensory information, including acoustic, electrophysiological, and mechanic modalities. As a proof-of-concept, a touchless user interface for virtual shopping based on the OMC-based reservoir computing system is demonstrated, benefiting from its interference-robust acoustic and electrophysiological perception. These results shed light on the development of highly power-efficient human-machine interfaces and machine-learning platforms.

Applications of Transmission Electron Microscopy in Phase Engineering of Nanomaterials

Phase engineering of nanomaterials (PEN) is an emerging field that aims to tailor the physicochemical properties of nanomaterials by precisely manipulating their crystal phases. To advance PEN effectively, it is vital to possess the capability of characterizing the structures and compositions of nanomaterials with precision. Transmission electron microscopy (TEM) is a versatile tool that combines reciprocal-space diffraction, real-space imaging, and spectroscopic techniques, allowing for comprehensive characterization with exceptional resolution in the domains of time, space, momentum, and, increasingly, even energy. In this Review, we first introduce the fundamental mechanisms behind various TEM-related techniques, along with their respective application scopes and limitations. Subsequently, we review notable applications of TEM in PEN research, including applications in fields such as metallic nanostructures, carbon allotropes, low-dimensional materials, and nanoporous materials. Specifically, we underscore its efficacy in phase identification, composition and chemical state analysis, in situ observations of phase evolution, as well as the challenges encountered when dealing with beam-sensitive materials. Furthermore, we discuss the potential generation of artifacts during TEM imaging, particularly in scanning modes, and propose methods to minimize their occurrence. Finally, we offer our insights into the present state and future trends of this field, discussing emerging technologies including four-dimensional scanning TEM, three-dimensional atomic-resolution imaging, and electron microscopy automation while highlighting the significance and feasibility of these advancements.

Ferroelectricity in hafnia controlled via surface electrochemical state

Ferroelectricity in binary oxides including hafnia and zirconia has riveted the attention of the scientific community due to the highly unconventional physical mechanisms and the potential for the integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviours such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggest that ferroelectricity in these materials is strongly influenced by other factors, including electrochemical boundary conditions and strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via the decoupling of electrochemical and electrostatic controls, realized via environmental and ultra-high vacuum piezoresponse force microscopy, we show that these materials demonstrate a rich spectrum of ferroic behaviours including partial-pressure-induced and temperature-induced transitions between ferroelectric and antiferroelectric behaviours. These behaviours are consistent with an antiferroionic model and suggest strategies for hafnia-based device optimization.