First-principle investigation of structural, electronic, and phase stabilities in chalcopyrite semiconductors: insights from Meta-GGA functionals

We undertake a comprehensive first-principles investigation into the factors influencing the optoelectronic efficiencies of PIQIIIR2VIchalcopyrite semiconductors. The structural attributes, electronic properties, and phase stabilities are explored using various meta-GGA exchange-correlation (XC) functionals within the density functional framework. In particular, we assess the relative performance of these XC functionals in obtaining estimates of various relevant parameters. The structural parameteruin chalcopyrite semiconductors is a noteworthy aspect, as it is intrinsically tied to the extent of orbital hybridization between distinct atoms and thereby strongly influences the electronic properties. In general, the application of widely used GGA-PBE XC functional to these chalcopyrites results in unreliable predictions of band gaps and 'u' parameter due to delocalization errors that in turn arise due to the inclusion ofdandfcore electrons. While hybrid functionals offer remarkable accuracy through state-of-the-art methods, their main drawback lies in their computational expense and resource demands. Our findings strongly suggest that in comparison to GGA-PBE, the meta-GGA XC functionals perform quite well and provide results that closely align with experimental values. In particular, ther2SCAN andrMGGAC XC functionals are preferable and superior for investigating chalcopyrites and other solid-state systems. This preference is rooted in their excellent performance and substantially reduced computational costs compared to hybrid functionals.

Performance of machine learning algorithms in spectroscopic ellipsometry data analysis of ZnTiO3 nanocomposite

In this research, the optical properties of the PVP: ZnTiO3 nanocomposite are studied using the spectroscopic ellipsometry technique. The preparation procedure of the ZnTiO3 nanocomposite is explained in detail. The absorbance/transmittance, surface morphology, structural information, chemical identification, and surface topography of the ZnTiO3 nanocomposite is studied using UV-Vis spectroscopy, field-emission scanning electron microscopy, Raman spectroscopy, Fourier transform infra-red, and atomic force microscopy, respectively. The ellipsometry method is used to obtain the spectra of the real and imaginary parts of the dielectric function and refractive index in the photon energy range of 0.59-4.59 eV. Moreover, using two machine learning algorithms, namely artificial neural network and support vector regression methods, the ellipsometric parameters ψ and Δ are analyzed and compared with non-linear regression. The error and accuracy of each three methods, as well as the time required for their execution, are calculated to compare their suitability in the ellipsometric data analysis. Also, the absorption coefficient was used to determine the band gap energy of the ZnTiO3 nanocomposite, which is found to be 3.83 eV. The second-energy derivative of the dielectric function is utilized to identify six critical point energies of the prepared sample. Finally, the spectral-dependent optical loss function and optical conductivity of the ZnTiO3 nanocomposite are investigated.

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Improved electronic structure prediction of chalcopyrite semiconductors from a semilocal density functional based on Pauli kinetic energy enhancement factor

The correct treatment ofdelectrons is of prime importance in order to predict the electronic properties of the prototype chalcopyrite semiconductors. The effect ofdstates is linked with the anion displacement parameteru, which in turn influences the bandgap of these systems. Semilocal exchange-correlation functionals which yield good structural properties of semiconductors and insulators often fail to predict reasonableubecause of the underestimation of the bandgaps arising from the strong interplay betweendelectrons. In the present study, we show that the meta-generalized gradient approximation (meta-GGA) obtained from the cuspless hydrogen density (MGGAC) (2019Phys. Rev.B 100 155140) performs in an improved manner in apprehending the key features of the electronic properties of chalcopyrites, and its bandgaps are comparative to that obtained using state-of-art hybrid methods. Moreover, the present assessment also shows the importance of the Pauli kinetic energy enhancement factor,α= (τ-τ^W)/τ^unifin describing thedelectrons in chalcopyrites. The present study strongly suggests that the MGGAC functional within semilocal approximations can be a better and preferred choice to study the chalcopyrites and other solid-state systems due to its superior performance and significantly low computational cost.

CuSCN as the Back Contact for Efficient ZMO/CdTe Solar Cells

The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl₂ treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm², and a fill factor of 74.0%.

Properties of Novel Non-Silicon Materials for Photovoltaic Applications: A First-Principle Insight

Due to the low absorption coefficients of crystalline silicon-based solar cells, researchers have focused on non-silicon semiconductors with direct band gaps for the development of novel photovoltaic devices. In this study, we use density functional theory to model the electronic structure of a large database of candidates to identify materials with ideal properties for photovoltaic applications. The first screening is operated at the GGA level to select only materials with a sufficiently small direct band gap. We extracted twenty-seven candidates from an initial population of thousands, exhibiting GGA band gap in the range 0.5⁻1 eV. More accurate calculations using a hybrid functional were performed on this subset. Based on this, we present a detailed first-principle investigation of the four optimal compounds, namely, TlBiS₂, Ba₃BiN, Ag₂BaS₂, and ZrSO. The direct band gap of these materials is between 1.1 and 2.26 eV. In the visible region, the absorption peaks that appear in the optical spectra for these compounds indicate high absorption intensity. Furthermore, we have investigated the structural and mechanical stability of these compounds and calculated electron effective masses. Based on in-depth analysis, we have identified TlBiS₂, Ba₃BiN, Ag₂BaS₂, and ZrSO as very promising candidates for photovoltaic applications.

Grain-boundary-enhanced carrier collection in CdTe solar cells

When CdTe solar cells are doped with Cl, the grain boundaries no longer act as recombination centers but actively contribute to carrier collection efficiency. The physical origin of this remarkable effect has been determined through a combination of aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles theory. Cl substitutes for a large proportion of the Te atoms within a few unit cells of the grain boundaries. Density functional calculations reveal the mechanism, and further indicate the grain boundaries are inverted to n type, establishing local p-n junctions which assist electron-hole pair separation. The mechanism is electrostatic, and hence independent of the geometry of the boundary, thereby explaining the universally high collection efficiency of Cl-doped CdTe solar cells.

Improved efficiency of a large-area Cu(In,Ga)Se₂ solar cell by a nontoxic hydrogen-assisted solid Se vapor selenization process

A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 × 30 cm(2)) Cu(In,Ga)Se2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (Voc) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd(Cu) participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe2) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.

One-Pot controlled synthesis of spongelike CuInS(2) microspheres for efficient counter electrode with graphene assistance in dye-sensitized solar cells

Spongelike CuInS2 3D microspheres were synthesized through a solvothermal method employing CuCl, InCl3, and thiourea as Cu, In, and S sources, respectively, and PVP as surfactant. The as-prepared products have regular spherical shapes with diameters of 0.8-3.7 μm, the spheres consisted of small nanosheets, which are composed of small nanoparticles. As an important solar cell material, its photovoltaic property was also tested and the results showed a solar energy conversion efficiency of 3.31%. With the help of reduced graphene, its conversion efficiency could be further increased to 6.18%. Compared with conventional Pt material used in counter electrodes of solar cells, this new material has an advantages of low-cost, facile synthesis and high efficiency with graphene assistance.

Effects of experimental conditions on the morphologies, structures and growth modes of pulsed laser-deposited CdS nanoneedles

CdS nanoneedles with different morphologies, structures, and growth modes have been grown on Ni-coated Si(100) surface under different experimental conditions by pulsed laser deposition method. The effects of catalyst layer, substrate temperature, and laser pulse energy on the growth of the CdS nanoneedles were studied in detail. It was confirmed that the formation of the molten catalyst spheres is the key to the nucleation of the CdS nanoneedles by observing the morphologies of the Ni catalyst thin films annealed at different substrate temperatures. Both the substrate temperature and laser pulse energy strongly affected the growth modes of the CdS nanoneedles. The secondary growth of the smaller nanoneedles on the top of the main nanoneedles was found at appropriate conditions. A group of more completed pictures of the growth modes of the CdS nanoneedles were presented.

Study of band structure at the Zn(S,O,OH)/Cu(In,Ga)Se2 interface via rapid thermal annealing and their effect on the photovoltaic properties

This study focused on understanding the mechanisms of the photovoltaic property changes in Zn(S,O,OH)/Cu(In,Ga)Se2 solar cells, which were fabricated via annealing, using reflection electron energy loss spectroscopy (REELS), ultraviolet photoelectron spectroscopy (UPS), low temperature photoluminescence (LTPL), and secondary ion mass spectroscopy (SIMS). A pinhole-free Zn(S,O,OH) buffer layer was grown on a CIGS absorber layer using the chemical bath deposition (CBD). When the Zn(S,O,OH) film was annealed until 200 °C, the Zn-OH bonds in the film decreased. The band gap value of the annealed film decreased and the valence band offset (VBO) value at the Zn(S,O,OH)/CIGS interface with the annealed film increased. Both results contribute to the conduction band offset (CBO) value at the Zn(S,O,OH)/CIGS interface and, in turn, yield a reduction in the energy barrier at the interface. As a result of the annealing, the short circuit current (JSC) and quantum efficiency (QE) values (400-600 nm) of the cell increased due to the improvement in the electron injection efficiency. However, when the Zn(S,O,OH) film was annealed at 300 °C, the cell efficiency declined sharply due to the QE loss in the long wavelength region (800-1100 nm). The SIMS analysis demonstrated that the Cu content in the CIGS bulk decreased and the Cu element also diffused into CIGS/Mo interface. Through LTPL analysis, it was seen that the considerable drop of the Cu content in the CIGS bulk induced a 1.15 eV PL peak, which was associated with the transition from a deep donor defect to degrade the quality of the CIGS bulk. Accordingly, the series resistance (RS) and efficiency of the cell increased.

Electroluminescent, polycrystalline cadmium selenide nanowire arrays

Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and metal-semiconductor-metal (M-S-M) devices were prepared by the evaporation of two gold contacts spaced by either 0.6 or 5 μm. These M-S-M devices showed symmetrical current voltage curves characterized by currents that increased exponentially with applied voltage bias. As the applied biased was increased, an increasing number of nanowires within the array "turned on", culminating in EL emission from 30 to 50% of these nanowires at applied voltages of 25-30 V. The spectrum of the emitted light was broad and centered at 770 nm, close to the 1.74 eV (712 nm) band gap of CdSe. EL light emission occurred with an external quantum efficiency of 4 × 10(-6) for devices with a 0.60 μm gap between the gold contacts and 0.5 × 10(-6) for a 5 μm gap-values similar to those reported for M-S-M devices constructed from single-crystalline CdSe nanowires. Kelvin probe force microscopy of 5 μm nc-CdSe nanowire arrays showed pronounced electric fields at the gold electrical contacts, coinciding with the location of strongest EL light emission in these devices. This electric field is implicated in the Poole-Frenkel minority carrier emission and recombination mechanism proposed to account for EL light emission in most of the devices that were investigated.

Elongated nanostructures for radial junction solar cells

In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition systems and the stability of the devices are significantly enhanced. These features lead to lower cost per installed watt peak for solar cells, provided that the (stabilized) efficiency is the same as for thicker devices. However, merely thinning down inevitably leads to a reduced light absorption. Therefore, advanced light trapping schemes are crucial to increase the light path length. The use of elongated nanostructures is a promising method for advanced light trapping. The enhanced optical performance originates from orthogonalization of the light's travel path with respect to the direction of carrier collection due to the radial junction, an improved anti-reflection effect thanks to the three-dimensional geometric configuration and the multiple scattering between individual nanostructures. These advantages potentially allow for high efficiency at a significantly reduced quantity and even at a reduced material quality, of the semiconductor material. In this article, several types of elongated nanostructures with the high potential to improve the device performance are reviewed. First, we briefly introduce the conventional solar cells with emphasis on thin film technology, following the most commonly used fabrication techniques for creating nanostructures with a high aspect ratio. Subsequently, several representative applications of elongated nanostructures, such as Si nanowires in realistic photovoltaic (PV) devices, are reviewed. Finally, the scientific challenges and an outlook for nanostructured PV devices are presented.

Electrochemical synthesis of CdTe/SWNT hybrid nanostructures and their tunable electrical and optoelectrical properties

A facile electrodeposition technique was utilized to deposit single-walled carbon nanotubes (SWNTs) with cadmium telluride (CdTe) with well-controlled size, density, surface morphology, and composition. By controlling the applied charge, the morphology of these hybrid nanostructures was altered from CdTe nanoparticles on SWNTs to SWNT/CdTe core/shell nanostructures and the composition of the CdTe nanoparticles was altered from Te-rich (29 at% Cd) to Cd-rich (79 at% Cd) CdTe by adjusting the deposition potential. The electrical and optoelectrical properties of these hybrid nanostructures showed that photo-induced current can be tuned by tailoring the conductivity type (n-type or p-type), morphology, and size of the CdTe nanostructures, with a maximum photosensitivity (ΔI/I(0)) of about 30% for SWNT/Cd-rich CdTe (n-type) core/shell nanostructures. This work demonstrates a novel approach for synthesizing metal chalcogenide/SWNT hybrid nanostructures for various electrical and optoelectrical applications.

Field-effect transistors from lithographically patterned cadmium selenide nanowire arrays

Field-effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrodeposition (LPNE) process on SiO(2)/Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C × 4 h either with or without exposure to CdCl(2) in methanol-a grain growth promoter. The influence of CdCl(2) treatment was to increase the mean grain diameter from 10 to 80 nm as determined by grazing incidence X-ray diffraction and to convert the crystal structure from cubic to wurtzite. Measured transfer characteristics showed an increase of the field effect mobility (μ(eff)) by an order of magnitude from 1.94 × 10(-4) cm(2)/(V s) to 23.4 × 10(-4) cm(2)/(V s) for pc-CdSe nanowires subjected to the CdCl(2) treatment. The CdCl(2) treatment also reduced the threshold voltage (from 20 to 5 V) and the subthreshold slope (by ~35%). Transfer characteristics for pc-CdSe NWFETs were also influenced by the channel length, L. For CdCl(2)-treated nanowires, μ(eff) was reduced by a factor of eight as L increased from 5 to 25 μm. These channel length effects are attributed to the presence of defects including breaks and constrictions within individual pc-CdSe nanowires.

Mg-doped ZnO nanoparticles for efficient sunlight-driven photocatalysis

Magnesium-doped ZnO (ZMO) nanoparticles were synthesized through an oxalate coprecipitation method. Crystallization of ZMO upon thermal decomposition of the oxalate precursors was investigated using differential scanning calorimetry (DSC) and X-ray diffraction (XRD) techniques. XRD studies point toward a significant c-axis compression and reduced crystallite sizes for ZMO samples in contrast to undoped ZnO, which was further confirmed by HRSEM studies. X-ray photoelectron spectroscopy (XPS), UV/vis spectroscopy and photoluminescence (PL) spectroscopy were employed to establish the electronic and optical properties of these nanoparticles. (XPS) studies confirmed the substitution of Zn(2+) by Mg(2+), crystallization of MgO secondary phase, and increased Zn-O bond strengths in Mg-doped ZnO samples. Textural properties of these ZMO samples obtained at various calcination temperatures were superior in comparison to the undoped ZnO. In addition to this, ZMO samples exhibited a blue-shift in the near band edge photoluminescence (PL) emission, decrease of PL intensities and superior sunlight-induced photocatalytic decomposition of methylene blue in contrast to undoped ZnO. The most active photocatalyst 0.1-MgZnO obtained after calcination at 600 °C showed a 2-fold increase in photocatalytic activity compared to the undoped ZnO. Band gap widening, superior textural properties and efficient electron-hole separation were identified as the factors responsible for the enhanced sunlight-driven photocatalytic activities of Mg-doped ZnO nanoparticles.

Prospects for electron microscopy characterisation of solar cells: opportunities and challenges

Several electron microscopy techniques available for characterising thin-film solar cells are described, including recent advances in instrumentation, such as aberration-correction, monochromators, time-resolved cathodoluminescence and focused ion-beam microscopy. Two generic problems in thin-film solar cell characterisation, namely electrical activity of grain boundaries and 3D morphology of excitionic solar cells, are also discussed from the standpoint of electron microscopy. The opportunities as well as challenges facing application of these techniques to thin-film and excitonic solar cells are highlighted.

Thermochemical and Kinetic Aspects of Cadmium Telluride Solar Cell Processing

A chemical and kinetic basis underlying processing strategies for thin film polycrystalline CdTe/CdS solar cell fabrication is presented. The processing conditions employed for moderate and high conversion efficiency CdTe/CdS solar cells fall within a consistent framework based on temperature and concentration of CdCl2 and O2 species during film deposition or thermal treatment. Detailed microstructural and compositional results are compared for thin-film CdTe/CdS structures with CdTe deposited by physical vapor deposition, electrodeposition and close-space sublimation. X-ray diffraction coupled with a model for diffusion of CdS into CdTe is used to determine the effect of treatment conditions on bulk and grain boundary diffusion coefficients. The effects of CdS diffusion, oxides, recrystallization and grain growth with respect to device efficiency, stability and process control over large area are discussed.

Bringing some photonic structures for solar cells to the fore

A review on the use of photonic structures enabling a better absorption of solar radiation within solar cells is proposed. Specific geometric configurations, such as folded solar cells or fiber-based architectures, are shown to be promising solutions to reach better light absorption. Electromagnetic optimization of thin-film solar cells and the use of angular thin-film filters, proposed by several research groups, also provide solutions to better concentrate solar radiation within the active layers of solar cells. Finally, results on "photonized" solar cells comprising gratings or more advanced photonic components, such as photonic crystals or plasmonic structures, and their effects on light-matter interaction in solar cells are highlighted.

Ordered arrays of shape tunable CuInS(2) nanostructures, from nanotubes to nano test tubes and nanowires

Well-aligned arrays of chalcopyrite CuInS(2) one dimensional nanostructures have been prepared in a controllable manner via a convenient wet-chemical approach using anodic aluminium oxide (AAO) as a hard template. Highly oriented CuInS(2) nanotubes, nano test tubes and nanowires arrays can be selectively grown by simply varying reaction conditions. Oleylamine (OLA) was found to play a key role in the synthesis and morphology control of the CuInS(2) product. The structure, morphology, composition and optical absorption properties of the as-prepared samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy and UV-Vis spectrophotometry. The formation mechanism of the CuInS(2) arrays is discussed.

Novel Materials through Non-Hydrolytic Sol-Gel Processing: Negative Thermal Expansion Oxides and Beyond

Low temperature methods have been applied to the synthesis of many advanced materials. Non-hydrolytic sol-gel (NHSG) processes offer an elegant route to stable and metastable phases at low temperatures. Excellent atomic level homogeneity gives access to polymorphs that are difficult or impossible to obtain by other methods. The NHSG approach is most commonly applied to the preparation of metal oxides, but can be easily extended to metal sulfides. Exploration of experimental variables allows control over product stoichiometry and crystal structure. This paper reviews the application of NHSG chemistry to the synthesis of negative thermal expansion oxides and selected metal sulfides.

First-principles study of the electronic and optical properties of CuXS(2) (X = Al, Ga, In) and AgGaS(2) ternary compounds

First-principles calculations (using the CASTEP code, as implemented in the Materials Studio package) of electronic and optical properties of several representative ternary semiconductors (CuXS(2), X = Al, Ga, In, and AgGaS(2)) were performed. After geometry optimization of the crystal structures, the band structures and partial and total densities of states were calculated and analyzed for all compounds considered. A scissor operator value of about 1.5 eV was introduced systematically to overcome the intrinsic drawback of the calculation technique-underestimation of the calculated band gaps. From the dielectric functions calculated with this correction, Sellmeyer's approximations for the dependence of the refractive index on the wavelength were obtained for all crystals studied. The values of the refractive indices calculated are in reasonable agreement with the experimental data.

First-principles studies of the atomic reconstructions of CdSe (001) and (111) surfaces

We have performed the first-principles total-energy calculations to investigate (2 × 1), (1 × 2), (2 × 2), (4 × 2) and (2 × 4) reconstructions of Cd- and Se-terminated CdSe(001) and (111) surfaces as a function of the surface stoichiometry and the Cd chemical potential. We find that there exist Cd dimers on the (001) surface and Se tetramers on the (111) surface. Comparing surface formation energies as a function of the Cd chemical potential μ(Cd), we find the Cd-vacancy and Se-vacancy (2 × 2) structures to be energetically favorable for the Cd-terminated (001) surface at high μ(Cd) and Se-terminated (001) surface at low μ(Cd), respectively. In contrast, an Se-tetramer (2 × 4) structure is more favorable than the vacancy structure for the Se-terminated CdSe(111) surface almost in the whole region of allowed μ(Cd).

Synthesis of CuInS2 Microspheres using In2S3 Microspheres as Templates

CuInS2 microspheres have been prepared via a solvothermal route employing synthetic In2S3 microspheres as templates. X-ray diffraction analysis reveals that CuInS2 crystals assembled from In2S3 microsphere building blocks are tetragonal phase. Field emission scanning electron microscopy and transmission electron microscopy images show that the prepared CuInS2 microspheres are constructed by nanosheets. The evolution of crystal structure could be attributed to Cu+ ions inserted into the In2S3 microsphere templates, such that some In3+ ions were replaced and tetragonal CuInS2 crystals were formed during the solvothermal process.