1
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Stam M, Almeida G, Ubbink RF, van der Poll LM, Vogel YB, Chen H, Giordano L, Schiettecatte P, Hens Z, Houtepen AJ. Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF 3 Treatment. ACS NANO 2024; 18:14685-14695. [PMID: 38773944 PMCID: PMC11155241 DOI: 10.1021/acsnano.4c03290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Revised: 05/06/2024] [Accepted: 05/15/2024] [Indexed: 05/24/2024]
Abstract
Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we present a simple postsynthesis HF-free treatment that is based on passivating the surface of the InP QDs with InF3. For optimized conditions, this results in a PLQY as high as 93% and nearly monoexponential photoluminescence decay. Etching of the particle surface is entirely avoided if the treatment is performed under stringent acid-free conditions. We show that this treatment is applicable to InP QDs with various sizes and InP QDs obtained via different synthesis routes. The optical properties of the resulting core-only InP QDs are on par with InP/ZnSe/ZnS core-shell QDs, with significantly higher absorption coefficients in the blue, and with potential for faster charge transport. These are important advantages when considering InP QDs for use in micro-LEDs or photodetectors.
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Affiliation(s)
- Maarten Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Guilherme Almeida
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Reinout F. Ubbink
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Lara M. van der Poll
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Yan B. Vogel
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Hua Chen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Luca Giordano
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Pieter Schiettecatte
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Zeger Hens
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, 9000 Gent, Belgium
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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2
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Kern S, Yi G, Büttner P, Scheler F, Tran MH, Korenko S, Dehm KE, Kundrata I, Zahl A, Albrecht S, Bachmann J, Crisp RW. Monolithic Two-Terminal Tandem Solar Cells Using Sb 2S 3 and Solution-Processed PbS Quantum Dots Achieving an Open-Circuit Potential beyond 1.1 V. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13903-13913. [PMID: 38459939 DOI: 10.1021/acsami.3c16154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/11/2024]
Abstract
Multijunction solar cells have the prospect of a greater theoretical efficiency limit than single-junction solar cells by minimizing the transmissive and thermalization losses a single absorber material has. In solar cell applications, Sb2S3 is considered an attractive absorber due to its elemental abundance, stability, and high absorption coefficient in the visible range of the solar spectrum, yet with a band gap of 1.7 eV, it is transmissive for near-IR and IR photons. Using it as the top cell (the cell where light is first incident) in a two-terminal tandem architecture in combination with a bottom cell (the cell where light arrives second) of PbS quantum dots (QDs), which have an adjustable band gap suitable for absorbing longer wavelengths, is a promising approach to harvest the solar spectrum more effectively. In this work, these two subcells are monolithically fabricated and connected in series by a poly(3,4-ethylene-dioxythiophene) polystyrene sulfonate (PEDOT:PSS)-ZnO tunnel junction as the recombination layer. We explore the surface morphology of ZnO QD films with different spin-coating conditions, which serve as the PbS QD cell's electron transport material. Furthermore, we examine the differences in photogenerated current upon varying the PbS QD absorber layer thickness and the electrical and optical characteristics of the tandem with respect to the stand-alone reference cells. This tandem architecture demonstrates an extended spectral response into the IR with an open-circuit potential exceeding 1.1 V and a power conversion efficiency of 5.6%, which is greater than that of each single-junction cell.
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Affiliation(s)
- Selina Kern
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Gyusang Yi
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Pascal Büttner
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Florian Scheler
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
- Perovskite Tandem Solar Cells, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 12489, Germany
| | - Minh-Hoa Tran
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Sofia Korenko
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Katharina E Dehm
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Ivan Kundrata
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Achim Zahl
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Steve Albrecht
- Perovskite Tandem Solar Cells, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin 12489, Germany
| | - Julien Bachmann
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
| | - Ryan W Crisp
- Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, Erlangen 91058, Germany
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3
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Thrupthika T, Nataraj D, Ramya S, Sangeetha A, Thangadurai TD. Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics. Phys Chem Chem Phys 2023; 25:25331-25343. [PMID: 37702661 DOI: 10.1039/d3cp02424e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/14/2023]
Abstract
Mn-doped CdTe (Mn-CdTe) quantum dot (QD) as well as quantum dot solid (QD solid) nanostructures are formed and the established structures are confirmed through HR-TEM analysis. The dynamics of charge carriers in both doped & undoped QD and QD solid structures were investigated by transient absorption (TA) spectroscopy. A slow band edge bleach recovery is obtained for Mn-doped CdTe QD and CdTe QD solid systems at room temperature. Additionally, a blue shifted broad bleach behaviour is identified for the Mn-CdTe QD solid system, which is attributed to hot exciton formation in the solid upon photoexcitation with a higher photon energy than the band gap energy (hν > Eg). This noteworthy process of generation of hot excitons and slow charge recombination occurs by means of a synergetic action of the Mn dopant in the host CdTe QD solid system as well as the extended electronic wave function between the coupled QD solid. Apart from the Mn-assisted delayed relaxation of hot electrons in the QD solid, a suppression in dark current as well as a high ION/IOFF ratio of 3203.12 at 1 V is observed in the Mn-CdTe QD-solid based photosensitized device in the visible region. Furthermore, we were able to improve the UV photon harvesting property in a narrow band gap Mn-CdTe QD solid through reducing the higher excited carrier's energy losses.
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Affiliation(s)
- Thankappan Thrupthika
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Devaraj Nataraj
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
- UGC-CPEPA Centre for Advanced Studies in Physics for the Development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641 046, India
| | - Subramaniam Ramya
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Arumugam Sangeetha
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - T Daniel Thangadurai
- KPR Institute of Engineering and Technology, Coimbatore, Tamil Nadu, 641 407, India.
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4
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Stam M, du Fossé I, Infante I, Houtepen AJ. Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots. ACS NANO 2023; 17:18576-18583. [PMID: 37712414 PMCID: PMC10540256 DOI: 10.1021/acsnano.3c07029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 09/12/2023] [Indexed: 09/16/2023]
Abstract
Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.
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Affiliation(s)
- Maarten Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Ivan Infante
- BC
Materials, Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa 48940, Spain
- Ikerbasque,
Basque Foundation for Science, Bilbao 48009, Spain
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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5
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Lee J, Kim B, Kim C, Lee MH, Kozakci I, Cho S, Kim B, Lee SY, Kim J, Oh J, Lee JY. Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39408-39416. [PMID: 37555937 DOI: 10.1021/acsami.3c08419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Hybrid colloidal quantum dot (CQD)/organic architectures are promising candidates for emerging optoelectronic devices having high performance and inexpensive fabrication. For unlocking the potential of CQD/organic hybrid devices, enhancing charge extraction properties at electron transport layer (ETL)/CQD interfaces is crucial. Hence, we carefully adjust the interface properties between the ETL and CQD layer by incorporating an interfacial layer for the ETL (EIL) using several types of cinnamic acid ligands. The EIL having a cascading band offset (ΔEC) between the ETL and CQD layer suppresses the potential barrier and the local charge accumulation at ETL/CQD interfaces, thereby reducing the bimolecular recombination. An optimal EIL effectively expands the depletion region that facilitates charge extraction between the ETL and CQD layer while preventing the formation of shallow traps. Representative devices with an EIL exhibit a maximum power conversion efficiency of 14.01% and retain over 80% of initial performances after 300 h under continuous maximum power point operation.
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Affiliation(s)
- Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Ho Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sungjun Cho
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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6
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Sklénard B, Mugny G, Chehaibou B, Delerue C, Arnaud A, Li J. Size and Solvation Effects on Electronic and Optical Properties of PbS Quantum Dots. J Phys Chem Lett 2022; 13:9044-9050. [PMID: 36150151 DOI: 10.1021/acs.jpclett.2c02247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
PbS quantum dots (QDs), among the most mature nanocrystals obtained by colloidal chemistry, are promising candidates in optoelectronic applications at various operational frequencies. QD device performances are often determined by charge transport, either carrier injection before photoemission or charge detection after photoabsorption, which is significantly influenced by the dielectric environment. Here, we present the electronic structure and the optical gap of PbS QDs versus size for various solvents calculated using ab initio methods including the many-body perturbation approaches. This study highlights the importance of the dielectric environment, pointing out (1) the non-negligible shift of the electronic structure due to the ground state polarization and (2) a substantial impact on the electronic bandgap. The electron-hole binding energy, which varies largely with the QD size and solvent, is well-described by an electrostatic model. This study reveals the fundamental physics of size and solvation effects, which could be useful to design PbS QD-based optoelectronic devices.
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Affiliation(s)
| | - Gabriel Mugny
- STMicroelectronics, 12 rue Jules Horowitz, 38019 Grenoble, France
| | - Bilal Chehaibou
- Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Centrale Lille, Junia, UMR 8520-IEMN, F-59000 Lille, France
| | - Christophe Delerue
- Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Centrale Lille, Junia, UMR 8520-IEMN, F-59000 Lille, France
| | - Arthur Arnaud
- STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France
| | - Jing Li
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
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7
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du Fossé I, Lal S, Hossaini AN, Infante I, Houtepen AJ. Effect of Ligands and Solvents on the Stability of Electron Charged CdSe Colloidal Quantum Dots. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2021; 125:23968-23975. [PMID: 34765075 PMCID: PMC8573769 DOI: 10.1021/acs.jpcc.1c07464] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2021] [Revised: 10/12/2021] [Indexed: 06/07/2023]
Abstract
Many colloidal quantum dot (QD)-based devices involve charging of the QD, either via intentional electronic doping or via electrical charge injection or photoexcitation. Previous research has shown that this charging can give rise to undesirable electrochemical surface reactions, leading to the formation of localized in-gap states. However, little is known about the factors that influence the stability of charged QDs against surface oxidation or reduction. Here, we use density functional theory to investigate the effect of various ligands and solvents on the reduction of surface Cd in negatively charged CdSe QDs. We find that X-type ligands can lead to significant shifts in the energy of the band edges but that the in-gap state related to reduced surface Cd is shifted in the same direction. As a result, shifting the band edges to higher energies does not necessarily lead to less stable electron charging. However, subtle changes in the local electrostatic environment lead to a clear correlation between the position of the in-gap state in the bandgap and the energy gained upon surface reduction. Binding ligands directly to the Cd sites most prone to reduction was found to greatly enhance the stability of the electron charged QDs. We find that ligands bind much more weakly after reduction of the Cd site, leading to a loss in binding energy that makes charge localization no longer energetically favorable. Lastly, we show that increasing the polarity of the solvent also increases the stability of QDs charged with electrons. These results highlight the complexity of surface reduction reactions in QDs and provide valuable strategies for improving the stability of charged QDs.
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Affiliation(s)
- Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Snigdha Lal
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Aydin Najl Hossaini
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Ivan Infante
- Department
of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
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8
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du Fossé I, Boehme SC, Infante I, Houtepen AJ. Dynamic Formation of Metal-Based Traps in Photoexcited Colloidal Quantum Dots and Their Relevance for Photoluminescence. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2021; 33:3349-3358. [PMID: 34054218 PMCID: PMC8154315 DOI: 10.1021/acs.chemmater.1c00561] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 04/09/2021] [Indexed: 05/11/2023]
Abstract
Trap states play a crucial role in the design of colloidal quantum dot (QD)-based technologies. The presence of these in-gap states can either significantly limit the efficiency of devices (e.g., in solar cells or LEDs) or play a pivotal role in the functioning of the technology (e.g., in catalysis). Understanding the atomistic nature of traps is therefore of the highest importance. Although the mechanism through which undercoordinated chalcogenide atoms can lead to trap states in II-VI QDs is generally well understood, the nature of metal-based traps remains more elusive. Previous research has shown that reduction of metal sites in negatively charged QDs can lead to in-gap states. Here, we use density functional theory to show that metal-based traps are also formed in charge-neutral but photoexcited CdSe QDs. It is found that Cd-Cd dimers and the concomitant trap states are transient in nature and appear and disappear on the picosecond time scale. Subsequent nonradiative recombination from the trap is shown to be much faster than radiative recombination, indicating that dimer-related trap states can quench the photoluminescence. These results are expected to be transferable to other II-VI materials and highlight the importance of surface redox reactions for the optical properties of QDs. Moreover, they show that photoexcitation can lead to atomic rearrangements on the surface and thus create transient in-gap states.
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Affiliation(s)
- Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Simon C. Boehme
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1, 8093 Zürich, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Ivan Infante
- Department
of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
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9
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Gréboval C, Chu A, Goubet N, Livache C, Ithurria S, Lhuillier E. Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration. Chem Rev 2021; 121:3627-3700. [DOI: 10.1021/acs.chemrev.0c01120] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Nicolas Goubet
- CNRS, Laboratoire de la Molécule aux Nano-objets; Réactivité, Interactions et Spectroscopies, MONARIS, Sorbonne Université, 4 Place Jussieu, Case Courier 840, F-75005 Paris, France
| | - Clément Livache
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
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10
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Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Colloidal HgTe Quantum Dot/Graphene Phototransistor with a Spectral Sensitivity Beyond 3 µm. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2003360. [PMID: 33747735 PMCID: PMC7967065 DOI: 10.1002/advs.202003360] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 12/14/2020] [Indexed: 05/03/2023]
Abstract
Infrared light detection enables diverse technologies ranging from night vision to gas analysis. Emerging technologies such as low-cost cameras for self-driving cars require highly sensitive, low-cost photodetector cameras with spectral sensitivities up to wavelengths of 10 µm. For this purpose, colloidal quantum dot (QD) graphene phototransistors offer a viable alternative to traditional technologies owing to inexpensive synthesis and processing of QDs. However, the spectral range of QD/graphene phototransistors is thus far limited to 1.6 µm. Here, HgTe QD/graphene phototransistors with spectral sensitivity up to 3 µm are presented, with specific detectivities of 6 × 108 Jones at a wavelength of 2.5 µm and a temperature of 80 K. Even at kHz light modulation frequencies, specific detectivities exceed 108 Jones making them suitable for fast video imaging. The simple device architecture and QD film patterning in combination with a broad spectral sensitivity manifest an important step toward low-cost, multi-color infrared cameras.
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Affiliation(s)
- Matthias J. Grotevent
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Claudio U. Hail
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Dominik Bachmann
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Michel Calame
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
- Department of PhysicsUniversity of BaselKlingelbergstrasse 82BaselCH‐4056Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process EngineeringETH ZurichSonneggstrasse 3ZurichCH‐8092Switzerland
| | - Maksym V. Kovalenko
- Department of Chemistry and Applied BiosciencesETH ZurichVladimir Prelog Weg 1ZurichCH‐8093Switzerland
- Laboratory for Thin Films and PhotovoltaicsSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
| | - Ivan Shorubalko
- Laboratory for Transport at Nanoscale InterfacesSwiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129DübendorfCH‐8600Switzerland
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11
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Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Kara G, Dirin DN, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:848-856. [PMID: 33350310 DOI: 10.1021/acsami.0c15226] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 1010 Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.
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Affiliation(s)
- Matthias J Grotevent
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Claudio U Hail
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dominik Bachmann
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Gökhan Kara
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dmitry N Dirin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Michel Calame
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Ivan Shorubalko
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
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12
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Bederak D, Sukharevska N, Kahmann S, Abdu-Aguye M, Duim H, Dirin DN, Kovalenko MV, Portale G, Loi MA. On the Colloidal Stability of PbS Quantum Dots Capped with Methylammonium Lead Iodide Ligands. ACS APPLIED MATERIALS & INTERFACES 2020; 12:52959-52966. [PMID: 33174723 PMCID: PMC7705889 DOI: 10.1021/acsami.0c16646] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Phase-transfer exchange of pristine organic ligands for inorganic ones is essential for the integration of colloidal quantum dots (CQDs) in optoelectronic devices. This method results in a colloidal dispersion (ink) which can be directly deposited by various solution-processable techniques to fabricate conductive films. For PbS CQDs capped with methylammonium lead iodide ligands (MAPbI3), the most commonly employed solvent is butylamine, which enables only a short-term (hours) colloidal stability and thus brings concerns on the possibility of manufacturing CQD devices on a large scale in a reproducible manner. In this work, we studied the stability of alternative inks in two highly polar solvents which impart long-term colloidal stability of CQDs: propylene carbonate (PC) and 2,6-difluoropyridine (DFP). The aging and the loss of the ink's stability were monitored with optical, structural, and transport measurements. With these solvents, PbS CQDs capped with MAPbI3 ligands retain colloidal stability for more than 20 months, both in dilute and concentrated dispersions. After 17 months of ink storage, transistors with a maximum linear mobility for electrons of 8.5 × 10-3 cm2/V s are fabricated; this value is 17% of the one obtained with fresh solutions. Our results show that both PC- and DFP-based PbS CQD inks offer the needed shelf life to allow for the development of a CQD device technology.
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Affiliation(s)
- Dmytro Bederak
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Nataliia Sukharevska
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Simon Kahmann
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Mustapha Abdu-Aguye
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Herman Duim
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Dmitry N. Dirin
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Vladimir
Prelog Weg 1, Zürich 8093, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Uberlandstrasse 129, Dübendorf 8600, Switzerland
| | - Maksym V. Kovalenko
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Vladimir
Prelog Weg 1, Zürich 8093, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Uberlandstrasse 129, Dübendorf 8600, Switzerland
| | - Giuseppe Portale
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
| | - Maria A. Loi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh
4, Groningen 9747AG, The Netherlands
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13
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Marino E, Sciortino A, Berkhout A, MacArthur KE, Heggen M, Gregorkiewicz T, Kodger TE, Capretti A, Murray CB, Koenderink AF, Messina F, Schall P. Simultaneous Photonic and Excitonic Coupling in Spherical Quantum Dot Supercrystals. ACS NANO 2020; 14:13806-13815. [PMID: 32924433 PMCID: PMC7596773 DOI: 10.1021/acsnano.0c06188] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Semiconductor nanocrystals, or quantum dots (QDs), simultaneously benefit from inexpensive low-temperature solution processing and exciting photophysics, making them the ideal candidates for next-generation solar cells and photodetectors. While the working principles of these devices rely on light absorption, QDs intrinsically belong to the Rayleigh regime and display optical behavior limited to electric dipole resonances, resulting in low absorption efficiencies. Increasing the absorption efficiency of QDs, together with their electronic and excitonic coupling to enhance charge carrier mobility, is therefore of critical importance to enable practical applications. Here, we demonstrate a general and scalable approach to increase both light absorption and excitonic coupling of QDs by fabricating hierarchical metamaterials. We assemble QDs into crystalline supraparticles using an emulsion template and demonstrate that these colloidal supercrystals (SCs) exhibit extended resonant optical behavior resulting in an enhancement in absorption efficiency in the visible range of more than 2 orders of magnitude with respect to the case of dispersed QDs. This successful light trapping strategy is complemented by the enhanced excitonic coupling observed in ligand-exchanged SCs, experimentally demonstrated through ultrafast transient absorption spectroscopy and leading to the formation of a free biexciton system on sub-picosecond time scales. These results introduce a colloidal metamaterial designed by self-assembly from the bottom up, simultaneously featuring a combination of nanoscale and mesoscale properties leading to simultaneous photonic and excitonic coupling, therefore presenting the nanocrystal analogue of supramolecular structures.
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Affiliation(s)
- Emanuele Marino
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
- Department
of Chemistry, University of Pennsylvania, 231 S. 34th St., Philadelphia, Pennsylvania 19104, United States
| | - Alice Sciortino
- Dipartimento
di Fisica e Chimica−Emilio Segrè, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Annemarie Berkhout
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098XG Amsterdam, The Netherlands
| | - Katherine E. MacArthur
- Ernst
Ruska Centre for Microscopy and Spectroscopy with Electrons and Peter
Grünberg Institute, Forschungszentrum
Jülich GmbH, 52425 Jülich, Germany
| | - Marc Heggen
- Ernst
Ruska Centre for Microscopy and Spectroscopy with Electrons and Peter
Grünberg Institute, Forschungszentrum
Jülich GmbH, 52425 Jülich, Germany
| | - Tom Gregorkiewicz
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
| | - Thomas E. Kodger
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
- Physical
Chemistry and Soft Matter, Wageningen University
and Research, Stippeneng 4, 6708WE Wageningen, The Netherlands
| | - Antonio Capretti
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
| | - Christopher B. Murray
- Department
of Chemistry, University of Pennsylvania, 231 S. 34th St., Philadelphia, Pennsylvania 19104, United States
- Department
of Materials Science and Engineering, University
of Pennsylvania, 220
S 33rd St., Philadelphia, Pennsylvania 19104, United States
| | - A. Femius Koenderink
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098XG Amsterdam, The Netherlands
| | - Fabrizio Messina
- Dipartimento
di Fisica e Chimica−Emilio Segrè, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Peter Schall
- Van
der Waals−Zeeman Institute, University
of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands
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14
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Nguyen HT, Ryu SY, Duong AT, Lee S. Impact of 1,2-ethanedithiol treatment on luminescence and charge-transport characteristics in colloidal quantum-dot LEDs. NANOTECHNOLOGY 2019; 30:505202. [PMID: 31501359 DOI: 10.1088/1361-6528/ab42dd] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on a substantial increase in luminance and luminous efficiency of green-light emitting devices (LEDs) that use colloidal CdSe@ZnS quantum dots (QDs) as a light-emitting material in response to treatment with 1,2-ethanedithiol (EDT). The maximum luminance increased from 1146 to 8075 cd m-2, and luminous yield from 0.15 to 1.41 cd A-1 as a result of treating an incomplete device with drops of EDT right after spin-coating QDs onto a ZnO-nanoparticle layer. Based on systematic studies on substrate-dependent change in photoluminescence, and current-voltage and luminance-voltage characteristics, we propose that passivation of intra-gap defect states and relative shifts of energy levels relevant to the operation of QD LEDs are two main results of EDT treatment. In particular, we argue that energy-level shift without emission-color change can be attributed to surface-dipole effects.
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Affiliation(s)
- Huu Tuan Nguyen
- Phenikaa Research and Technology Institute (PRATI), A&A Green Phoenix Group, 167 Hoang Ngan, Hanoi, 10000, Vietnam. Faculty of Electrical and Electronic Engineering and Phenikaa Institute for Advanced Study (PIAS), Phenikaa University, Yen Nghia, Ha-Dong District, Hanoi, 10000, Vietnam
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15
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Grimaldi G, van den Brom MJ, du Fossé I, Crisp RW, Kirkwood N, Gudjonsdottir S, Geuchies JJ, Kinge S, Siebbeles LDA, Houtepen AJ. Engineering the Band Alignment in QD Heterojunction Films via Ligand Exchange. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2019; 123:29599-29608. [PMID: 31867087 PMCID: PMC6913897 DOI: 10.1021/acs.jpcc.9b09470] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2019] [Revised: 11/18/2019] [Indexed: 05/24/2023]
Abstract
Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the size of the QDs. However, control over the band alignment between the two materials is required to tune the dynamics of carrier transfer across a heterostructure. We demonstrate that ligand exchange strategies can be used to control the band alignment of PbSe and CdSe QDs in a mixed QD solid, shifting it from a type-I to a type-II alignment. The change in alignment is observed in both spectroelectrochemical and transient absorption measurements, leading to a change in the energy of the conduction band edges in the two materials and in the direction of electron transfer upon photoexcitation. Our work demonstrates the possibility to tune the band offset of QD heterostructures via control of the chemical species passivating the QD surface, allowing full control over the energetics of the heterostructure without requiring changes in the QD composition.
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Affiliation(s)
- Gianluca Grimaldi
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Mark J. van den Brom
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Ryan W. Crisp
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Nicholas Kirkwood
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Solrun Gudjonsdottir
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Jaco J. Geuchies
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Sachin Kinge
- Toyota
Motor Europe, Materials Research & Development, Hoge Wei 33, B-1930 Zaventem, Belgium
| | - Laurens D. A. Siebbeles
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
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16
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Nguyen TP, Nguyen DLT, Nguyen VH, Le TH, Vo DVN, Ly QV, Kim SY, Le QV. Recent Progress in Carbon-Based Buffer Layers for Polymer Solar Cells. Polymers (Basel) 2019; 11:E1858. [PMID: 31717989 PMCID: PMC6918399 DOI: 10.3390/polym11111858] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2019] [Revised: 10/23/2019] [Accepted: 11/05/2019] [Indexed: 12/04/2022] Open
Abstract
Carbon-based materials are promising candidates as charge transport layers in various optoelectronic devices and have been applied to enhance the performance and stability of such devices. In this paper, we provide an overview of the most contemporary strategies that use carbon-based materials including graphene, graphene oxide, carbon nanotubes, carbon quantum dots, and graphitic carbon nitride as buffer layers in polymer solar cells (PSCs). The crucial parameters that regulate the performance of carbon-based buffer layers are highlighted and discussed in detail. Furthermore, the performances of recently developed carbon-based materials as hole and electron transport layers in PSCs compared with those of commercially available hole/electron transport layers are evaluated. Finally, we elaborate on the remaining challenges and future directions for the development of carbon-based buffer layers to achieve high-efficiency and high-stability PSCs.
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Affiliation(s)
- Thang Phan Nguyen
- Laboratory of Advanced Materials Chemistry, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam;
- Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City 700000, Vietnam
| | - Dang Le Tri Nguyen
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam; (D.L.T.N.); (Q.V.L.)
| | - Van-Huy Nguyen
- Key Laboratory of Advanced Materials for Energy and Environmental Applications, Lac Hong University, Bien Hoa 810000, Vietnam;
| | - Thu-Ha Le
- Faculty of Materials Technology, Ho Chi Minh City University of Technology (HCMUT), Vietnam National University–Ho Chi Minh City (VNU–HCM), 268 Ly Thuong Kiet, District 10, Ho Chi Minh City 700000, Viet Nam;
| | - Dai-Viet N. Vo
- Center of Excellence for Green Energy and Environmental Nanomaterials (CE@GrEEN), Nguyen Tat Thanh University, 300A Nguyen Tat Thanh, District 4, Ho Chi Minh City 755414, Vietnam;
| | - Quang Viet Ly
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam; (D.L.T.N.); (Q.V.L.)
- State Key Laboratory of Separation Membrane and Membrane Processes, National Center for International Joint Research on Membrane Science and Technology, School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, China
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Quyet Van Le
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam; (D.L.T.N.); (Q.V.L.)
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17
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Chu A, Martinez B, Ferré S, Noguier V, Gréboval C, Livache C, Qu J, Prado Y, Casaretto N, Goubet N, Cruguel H, Dudy L, Silly MG, Vincent G, Lhuillier E. HgTe Nanocrystals for SWIR Detection and Their Integration up to the Focal Plane Array. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33116-33123. [PMID: 31426628 DOI: 10.1021/acsami.9b09954] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the short-wave infrared (SWIR, λ < 1.7 μm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for a wider band gap such as the one made for solar cells, while HgTe takes advantage of the development relative to mid-wave infrared detectors. Here, we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from the p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multipixel devices to quantize spatial homogeneity and onto read-out circuits to obtain a fast and sensitive infrared laser beam profile.
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Affiliation(s)
- Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Bertille Martinez
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Simon Ferré
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Vincent Noguier
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Casaretto
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Sorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS , F-75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Lenart Dudy
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
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18
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Khanam JJ, Foo SY, Yu Z, Liu T, Mao P. Efficient, Stable, and Low-Cost PbS Quantum Dot Solar Cells with Cr-Ag Electrodes. NANOMATERIALS 2019; 9:nano9091205. [PMID: 31461887 PMCID: PMC6780186 DOI: 10.3390/nano9091205] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Revised: 08/21/2019] [Accepted: 08/23/2019] [Indexed: 11/16/2022]
Abstract
PbS quantum dots (QDs) are a promising nanostructured material for solar cells. However, limited works have been done to explore the active layer thickness, layer deposition techniques, stability improvement, and cost reduction for PbS QD solar cells. We address those issues of device fabrication herein and suggest their possible solutions. In our work, to get the maximum current density from a PbS QD solar cell, we estimated the optimized active layer thickness using Matlab simulation. After that, we fabricated a high-performance and low-cost QD photovoltaic (PV) device with the simulated optimized active layer thickness. We implemented this low-cost device using a 10 mg/mL PbS concentration. Here, spin coating and drop-cast layer deposition methods were used and compared. We found that the device prepared by the spin coating method was more efficient than that by the drop cast method. The spin-coated PbS QD solar cell provided 6.5% power conversion efficiency (PCE) for the AM1.5 light spectrum. Besides this, we observed that Cr (chromium) interfaced with the Ag (Cr–Ag) electrode can provide a highly air-stable electrode.
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Affiliation(s)
- Jobeda J Khanam
- Department of Electrical and Computer Engineering, FAMU-FSU College of Engineering, Tallahassee, FL 32310, USA
| | - Simon Y Foo
- Department of Electrical and Computer Engineering, FAMU-FSU College of Engineering, Tallahassee, FL 32310, USA.
| | - Zhibin Yu
- Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, FAMU-FSU College of Engineering, Florida State University, Tallahassee, FL 32310, USA
| | - Tianhan Liu
- Department of Physics, Florida State University, Tallahassee, FL 32306, USA
| | - Pengsu Mao
- Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, FAMU-FSU College of Engineering, Florida State University, Tallahassee, FL 32310, USA
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19
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du Fossé I, ten Brinck S, Infante I, Houtepen AJ. Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2019; 31:4575-4583. [PMID: 31274957 PMCID: PMC6595709 DOI: 10.1021/acs.chemmater.9b01395] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2019] [Revised: 05/25/2019] [Indexed: 05/19/2023]
Abstract
The efficiency of nanocrystal (NC)-based devices is often limited by the presence of surface states that lead to localized energy levels in the bandgap. Yet, a complete understanding of the nature of these traps remains challenging. Although theoretical modeling has greatly improved our comprehension of the NC surface, several experimental studies suggest the existence of metal-based traps that have not yet been found with theoretical methods. Since there are indications that these metal-based traps form in the presence of excess electrons, the present work uses density functional theory (DFT) calculations to study the effects of charging II-VI semiconductor NCs with either full or imperfect surface passivation. It is found that charge injection can lead to trap-formation via two pathways: metal atom ejection from perfectly passivated NCs or metal-metal dimer-formation in imperfectly passivated NCs. Fully passivated CdTe NCs are observed to be stable up to a charge of two electrons. Further reduction leads to charge localization on a surface Cd atom and the formation of in-gap states. The effects of suboptimal passivation are probed by charging NCs where an X-type ligand is removed from the (100) plane. In this case, injection of even one electron leads to Cd-dimerization and trap-formation. Addition of an L-type amine ligand prevents this dimer-formation and is suggested to also prevent trapping of photoexcited electrons in charge neutral NCs. The results presented in this work are generalized to NCs of different sizes and other II-VI semiconductors. This has clear implications for n-doping II-VI semiconductor NCs without introducing surface traps due to metal ion reduction. The possible effect of these metal ion localized traps on the photoluminescence efficiency of neutral NCs is also discussed.
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Affiliation(s)
- Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Stephanie ten Brinck
- Department
of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands
| | - Ivan Infante
- Department
of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands
- Department
of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- E-mail:
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
- E-mail:
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20
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Fabrication and Luminescent Properties of Zn–Cu–In–S/ZnS Quantum Dot Films under UV Excitation. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9112367] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Quantum dots (QDs) are quite interesting materials due to their unique chemical and physical properties. ZnCuInS/ZnS QDs can be produced either in hydrophobic or hydrophilic form, are non-toxic, and thus favorable for studies in the area of biology. Poly(methyl methacrylate) (PMMA) is a well-known biocompatible resin which is widely used in dentistry, ophthalmology, and orthopedic surgery. Four composite PMMA films of ZnCuInS/ZnS nanocrystals with maximum emission at 530 nm and concentrations of 1.0, 4.0, 6.0, and 10.0 %w/v, were prepared. X-ray irradiation was used to evaluate the volume homogeneity of the final samples, as a measure of QD dispersion. The luminescent efficiency was evaluated, under ultraviolet (UV) irradiation. The process of UV irradiation involved the experimental measurement of the forward luminescent light, as well as the backward luminescent light, in order to accurately calculate the energy quantum efficiency (EQE) of ZnCuInS/ZnS QDs. Reflected UV radiation was also measured, and results showed that it ranges from 2% to 6% approximately as the QD concentration rises from 1.0 %w/v to 10.0 %w/v. Beyond 6.0 %w/v, the reflected UV radiation remains essentially unchanged. Additionally, the reflected UV radiation remained unaffected as the power of the incident UV increased. Approximately 9% of incident UV radiation passed through the 1.0 %w/v sample, whereas for the samples with higher ZnCuInS/ZnS concentration, 0% UV radiation passed through. The EQE reached a maximum of about 45% with the 10.0 %w/v sample, while it remained practically unaffected relative to the increase of the emitted UV power. The homogeneity measurements revealed that the coefficient of variation (CV) increased with increasing concentration, for the 1.0, 4.0, and 6.0 %w/v samples. The minimum CV was obtained for the sample of 10.0 %w/v due to the incorporation of sonication in the final product, during the fabrication process.
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21
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Marino E, Balazs DM, Crisp RW, Hermida-Merino D, Loi MA, Kodger TE, Schall P. Controlling Superstructure-Property Relationships via Critical Casimir Assembly of Quantum Dots. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2019; 123:13451-13457. [PMID: 31205576 PMCID: PMC6558640 DOI: 10.1021/acs.jpcc.9b02033] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2019] [Revised: 04/26/2019] [Indexed: 05/17/2023]
Abstract
The assembly of colloidal quantum dots (QDs) into dense superstructures holds great promise for the development of novel optoelectronic devices. Several assembly techniques have been explored; however, achieving direct and precise control over the interparticle potential that controls the assembly has proven to be challenging. Here, we exploit the application of critical Casimir forces to drive the growth of QDs into superstructures. We show that the exquisite temperature-dependence of the critical Casimir potential offers new opportunities to control the assembly process and morphology of the resulting QD superstructures. The direct assembly control allows us to elucidate the relation between structural, optical, and conductive properties of the critical Casimir-grown QD superstructures. We find that the choice of the temperature setting the interparticle potential plays a central role in maximizing charge percolation across QD thin-films. These results open up new directions for controlling the assembly of nanostructures and their optoelectronic properties.
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Affiliation(s)
- Emanuele Marino
- Van
der Waals—Zeeman Institute, University
of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Daniel M. Balazs
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Ryan W. Crisp
- Chemical
Engineering, Optoelectronic Materials, Delft
University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | | | - Maria A. Loi
- Zernike
Institute for Advanced Materials, University
of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Thomas E. Kodger
- Van
der Waals—Zeeman Institute, University
of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
- Physical
Chemistry and Soft Matter, Wageningen University
& Research, Stippeneng 4, 6708 WE Wageningen, The Netherlands
| | - Peter Schall
- Van
der Waals—Zeeman Institute, University
of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
- E-mail:
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22
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Grimaldi G, Geuchies JJ, van der Stam W, du Fossé I, Brynjarsson B, Kirkwood N, Kinge S, Siebbeles LD, Houtepen AJ. Spectroscopic Evidence for the Contribution of Holes to the Bleach of Cd-Chalcogenide Quantum Dots. NANO LETTERS 2019; 19:3002-3010. [PMID: 30938530 PMCID: PMC6509645 DOI: 10.1021/acs.nanolett.9b00164] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2019] [Revised: 03/22/2019] [Indexed: 05/20/2023]
Abstract
In transient absorption (TA) measurements on Cd-chalcogenide quantum dots (QDs), the presence of a band-edge (BE) bleach signal is commonly attributed entirely to conduction-band electrons in the 1S(e) state, neglecting contributions from BE holes. While this has been the accepted view for more than 20 years, and has often been used to distinguish electron and hole kinetics, the reason for the absence of a hole contribution to the BE-bleach has remained unclear. Here, we show with three independent experiments that holes do in fact have a significant impact on the BE-bleach of well-passivated Cd-chalcogenide QD samples. Transient absorption experiments on high photoluminescence quantum yield CdSe/CdS/ZnS core-shell-shell QDs clearly show an increase of the band-edge bleach as holes cool down to the band edge. The relative contribution of electron-to-hole bleach is 2:1, as predicted by theory. The same measurements on core-only CdSe QDs with a lower quantum yield do not show a contribution of holes to the band-edge bleach. We assign the lack of hole bleach to the presence of ultrafast hole trapping in samples with insufficient passivation of the QD surface. In addition, we show measurements of optical gain in core-shell-shell QD solutions, providing clear evidence of a significant hole contribution to the BE transient absorption signal. Finally, we present spectroelectrochemical measurements on CdTe QDs films, showing the presence of a BE-bleach for both electron and hole injections. The presence of a contribution of holes to the bleach in passivated Cd-chalcogenides QDs bears important implications for quantitative studies on optical gain as well as for TA determinations of carrier dynamics.
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Affiliation(s)
- Gianluca Grimaldi
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
- E-mail:
| | - Jaco J. Geuchies
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
- E-mail:
| | - Ward van der Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
| | - Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
| | - Baldur Brynjarsson
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
| | - Nicholas Kirkwood
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
| | - Sachin Kinge
- Materials
Research & Development, Toyota Motor
Europe, Hoge Wei 33, Zaventem B-1930, Belgium
| | - Laurens D.A. Siebbeles
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, HAZ Delft 2629, The Netherlands
- E-mail:
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