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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. Small 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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Ding LP, Guo ZA, Qiao FY, Guo YJ, Shao P, Ding F. Role of Edge Reconstruction in the Synthesis of Few-Layer Black Phosphorene. J Phys Chem Lett 2024; 15:1999-2005. [PMID: 38349331 DOI: 10.1021/acs.jpclett.4c00358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Recent advancements in preparing few-layer black phosphorene (BP) are hindered by edge reconstruction challenges. Our previous studies have revealed the factors contributing to the difficulty of growing few-layer BP. In this study, we have successfully identified three reconstructed edges in bi- and multilayer BP through a combination of the crystal structure analysis by particle swarm optimization (CALYPSO) global structure search and density functional theory (DFT). Notably, the reconstruction between adjacent layers proves more beneficial than self-passivation or maintaining pristine edges. Among the reconstructed edges, the reconstructed ZZ edge is the most stable, regardless of the number of layers. Calculated electronic band structures reveal a significant transition in the electronic properties of black phosphorus nanoribbons (BPNRs), changing from metallic to semiconducting. This insight not only enhances the understanding of the fundamental properties of BP but also provides valuable theoretical guidance for the experimental growth of BPNRs or black phosphorus nanowires (BPNWs).
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Affiliation(s)
- Li-Ping Ding
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, People's Republic of China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Zi Ao Guo
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Fei-Yue Qiao
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Yi-Jin Guo
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Peng Shao
- Department of Optoelectronic Science & Technology, School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Feng Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong 518055, People's Republic of China
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Kang MS, Jang HJ, Jo HJ, Raja IS, Han DW. MXene and Xene: promising frontier beyond graphene in tissue engineering and regenerative medicine. Nanoscale Horiz 2023; 9:93-117. [PMID: 38032647 DOI: 10.1039/d3nh00428g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
The emergence of 2D nanomaterials (2D NMs), which was initiated by the isolation of graphene (G) in 2004, revolutionized various biomedical applications, including bioimaging and -sensing, drug delivery, and tissue engineering, owing to their unique physicochemical and biological properties. Building on the success of G, a novel class of monoelemental 2D NMs, known as Xenes, has recently emerged, offering distinct advantages in the fields of tissue engineering and regenerative medicine. In this review, we focus on the comparison of G and Xene materials for use in fabricating tissue engineering scaffolds. After a brief introduction to the basic physicochemical properties of these materials, recent representative studies are classified in terms of the engineered tissue, i.e., bone, cartilage, neural, muscle, and skin tissues. We analyze several methods of improving the clinical potential of Xene-laden scaffolds using state-of-the-art fabrication technologies and innovative biomaterials. Despite the considerable advantages of Xene materials, critical concerns, such as biocompatibility, biodistribution and regulatory challenges, should be considered. This review and collaborative efforts should advance the field of Xene-based tissue engineering and enable innovative, effective solutions for use in future tissue regeneration.
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Affiliation(s)
- Moon Sung Kang
- Department of Cogno-Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Republic of Korea.
| | - Hee Jeong Jang
- Department of Cogno-Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Republic of Korea.
| | - Hyo Jung Jo
- Department of Cogno-Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Republic of Korea.
| | | | - Dong-Wook Han
- Department of Cogno-Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Republic of Korea.
- BIO-IT Fusion Technology Research Institute, Pusan National University, Busan 46241, Republic of Korea
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Shutt RRC, Ramireddy T, Stylianidis E, Di Mino C, Ingle RA, Ing G, Wibowo AA, Nguyen HT, Howard CA, Glushenkov AM, Stewart A, Clancy AJ. Synthesis of Black Phosphorene Quantum Dots from Red Phosphorus. Chemistry 2023; 29:e202301232. [PMID: 37435907 PMCID: PMC10947263 DOI: 10.1002/chem.202301232] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 06/06/2023] [Accepted: 07/11/2023] [Indexed: 07/13/2023]
Abstract
Black phosphorene quantum dots (BPQDs) are most commonly derived from high-cost black phosphorus, while previous syntheses from the low-cost red phosphorus (Pred ) allotrope are highly oxidised. Herein, we present an intrinsically scalable method to produce high quality BPQDs, by first ball-milling Pred to create nanocrystalline Pblack and subsequent reductive etching using lithium electride solvated in liquid ammonia. The resultant ~25 nm BPQDs are crystalline with low oxygen content, and spontaneously soluble as individualized monolayers in tertiary amide solvents, as directly imaged by liquid-phase transmission electron microscopy. This new method presents a scalable route to producing quantities of high quality BPQDs for academic and industrial applications.
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Affiliation(s)
- Rebecca R. C. Shutt
- Department of Physics and AstronomyUniversity College LondonLondonWC1E 6BTUK
| | - Thrinathreddy Ramireddy
- Research School of ChemistryThe Australian National UniversityActonACT 2601Australia
- Battery Storage and Grid Integration ProgramThe Australian National UniversityActonACT 2601Australia
| | | | - Camilla Di Mino
- Department of Physics and AstronomyUniversity College LondonLondonWC1E 6BTUK
| | - Rebecca A. Ingle
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Gabriel Ing
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Ary A. Wibowo
- School of EngineeringThe Australian National UniversityActonACT 2601Australia
| | - Hieu T. Nguyen
- School of EngineeringThe Australian National UniversityActonACT 2601Australia
| | | | - Alexey M. Glushenkov
- Research School of ChemistryThe Australian National UniversityActonACT 2601Australia
- Battery Storage and Grid Integration ProgramThe Australian National UniversityActonACT 2601Australia
| | - Andrew Stewart
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Adam J. Clancy
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
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Abstract
Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS2/WSe2). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes
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Adak AK, Sharma D, Narasimhan S. Blue and black phosphorene on metal substrates: a density functional theory study. J Phys Condens Matter 2021; 34:084001. [PMID: 34768253 DOI: 10.1088/1361-648x/ac394e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2021] [Accepted: 11/12/2021] [Indexed: 06/13/2023]
Abstract
We have performed density functional theory calculations to study blue phosphorene and black phosphorene on metal substrates. The substrates considered are the (111) and (110) surfaces of Al, Cu, Ag, Ir, Pd, Pt and Au and the (0001) and (101¯0) surfaces of Zr and Sc. The formation energyEFis negative (energetically favorable) for all 36 combinations of overlayer and substrate. By comparing values of ΔΩ, the change in free energy per unit area, as well as the overlayer-substrate binding energyEb, we identify that Ag(111), Al(110), Cu(111), Cu(110) and possibly Au(110) may be especially suitable substrates for the synthesis and subsequent exfoliation of blue phosphorene, and the Ag(110) and Al(111) substrates for the synthesis of black phosphorene. However, these conclusions are drawn assuming the source of P atoms is bulk phosphorus, and can alter upon changing synthesis conditions (chemical potential of phosphorus). Thus, when the source of phosphorus atoms is P4, blue phosphorene is favored only over Pt(111). We find that for all combinations of overlayer and substrate, the charge transfer per bond can be captured by the universal descriptorD=Δχ/ΔR, where ΔχandΔRare, respectively, the differences in electronegativity and atomic size between phosphorus and the substrate metal.
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Affiliation(s)
- Abhishek K Adak
- Theoretical Sciences Unit & School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064, India
| | - Devina Sharma
- Theoretical Sciences Unit & School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064, India
| | - Shobhana Narasimhan
- Theoretical Sciences Unit & School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064, India
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Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Saravanan S, Nagarajan V, Chandiramouli R. Alcohol molecular interaction studies on stair phosphorene nanosheets: a first-principles approach. Struct Chem 2020. [DOI: 10.1007/s11224-020-01615-8] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Huang L, Xie J, Sheng W. Hubbard excitons in two-dimensional nanomaterials. J Phys Condens Matter 2019; 31:275302. [PMID: 30952139 DOI: 10.1088/1361-648x/ab1677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Excitons in two-dimensional nanomaterials are studied by solving the many-electron Hamiltonian with a configuration-interaction approach. It is shown that graphene or phosphorene nanoflakes can not accommodate any excitonic bound states if the long-range Coulomb interaction is suppressed when the systems are placed in a high-k dielectric environment or on a metal substrate. Hence it is revealed that an electron-hole pair created by an optical excitation does not always form an exciton even in a confined nanostructure. The negative exciton binding energy is found to exhibit distinct dependence on the strength of short-range Coulomb interaction as the system undergoes a phase transition from non-magnetic to anti-ferromagnetic. It is further shown that the electron-hole pair may form an exciton state only when the long-range Coulomb interaction is recovered in the nanoflakes.
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Affiliation(s)
- Linan Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, People's Republic of China
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Wang J, Cai Q, Lei J, Yang G, Xue J, Chen D, Liu B, Lu H, Zhang R, Zheng Y. Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles. ACS Appl Mater Interfaces 2019; 11:20956-20964. [PMID: 31046216 DOI: 10.1021/acsami.9b02192] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We systematically study the device characteristics of the monolayer (ML) blue phosphorene metal-oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations. The ML blue phosphorene MOSFETs show superior performances with ultrashort-channel length. We first predict the ultrascaled ML blue phosphorene MOSFETs with proper doping concentration and underlap structures are compliant with the high-performance (HP) and low-power (LP) requirements of the International Technology Roadmap for Semiconductors in the next decade in the aspects of the on-state current, delay time, and power dissipation. Encouragingly, the performances of the ML blue phosphorene MOSFETs are superior to that of the MOSFETs based on arsenene, antimonene, InSe, etc. in terms of the on-state current at similar device size. We also consider the electron-phonon scattering in 10.2 nm gate ML blue phosphorene MOSFET. It is found that the on-state current with the scattering of the blue phosphorene device is degraded by 25.4 and 23.6% for HP and LP applications, which can also fulfill the HP and LP application target. Therefore, we can deduce that ML blue phosphorene is an alternative channel material to silicon for ultrascaled FETs if the large-scale and high-quality blue phosphorene can be achieved.
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Affiliation(s)
- Jin Wang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Jianming Lei
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology , Jiangnan University , Wuxi 214122 , China
| | - Junjun Xue
- School of Electronic Science and Engineering , Nanjing University of Posts and Telecommunications , Nanjing 210023 , China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
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Costa JC, Spina F, Lugoda P, Garcia-garcia L, Roggen D, Münzenrieder N. Flexible Sensors—From Materials to Applications. Technologies 2019; 7:35. [DOI: 10.3390/technologies7020035] [Citation(s) in RCA: 94] [Impact Index Per Article: 18.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.
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Hu Z, Niu T, Guo R, Zhang J, Lai M, He J, Wang L, Chen W. Two-dimensional black phosphorus: its fabrication, functionalization and applications. Nanoscale 2018; 10:21575-21603. [PMID: 30457619 DOI: 10.1039/c8nr07395c] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Phosphorus, one of the most abundant elements in the Earth (∼0.1%), has attracted much attention in the last five years since the rediscovery of two-dimensional (2D) black phosphorus (BP) in 2014. The successful scaling down of BP endows this 'old material' with new vitality, resulting from the intriguing semiconducting properties in the atomic scale limit, i.e. layer-dependent bandgap that covers from the visible light to mid-infrared light spectrum as well as hole-dominated ambipolar transport characteristics. Intensive research effort has been devoted to the fabrication, characterization, functionalization and application of BP and other phosphorus allotropes. In this review article, we summarize the fundamental properties and fabrication techniques of BP, with particular emphasis on the recent progress in molecular beam epitaxy growth of 2D phosphorus. Subsequently, we highlight recent progress in BP (opto)electronic device applications achieved via customized manipulation methods, such as interface, defect and bandgap engineering as well as forming Lego-like stacked heterostructures.
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Affiliation(s)
- Zehua Hu
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
| | - Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, No. 200 Xiaolingwei, Nanjing 210094, China.
| | - Rui Guo
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
| | - Jialin Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
| | - Min Lai
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Jun He
- School of Physics and Electronics, Central South University, 932 Lushan Road, Changsha 100083, China
| | - Li Wang
- Institute for Advanced Study and Department of Physics, Nanchang University, 999 Xue Fu Da Dao, Nanchang 330000, China
| | - Wei Chen
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore. and Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore and National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, China
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Zhang JL, Han C, Hu Z, Wang L, Liu L, Wee ATS, Chen W. 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices. Adv Mater 2018; 30:e1802207. [PMID: 30101443 DOI: 10.1002/adma.201802207] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2018] [Revised: 05/17/2018] [Indexed: 06/08/2023]
Abstract
Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.
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Affiliation(s)
- Jia Lin Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Zehua Hu
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Li Wang
- Institute for Advanced Study and Department of Physics, Nanchang University, 999 Xue Fu Da Dao, Nanchang, 330031, China
| | - Lei Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
| | - Wei Chen
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Jiang Su, 215123, China
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14
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Affiliation(s)
- Junfeng Gao
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
| | - Ziwei Xu
- School of Materials Science & Engineering; Jiangsu University; Zhenjiang 212013 China
| | - Shuai Chen
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
| | | | - Yong-Wei Zhang
- Institute of High Performance Computing; A*STAR Singapore 138632 Singapore
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