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Li Z, Wang X, Yao Y, Xin J, Xie L, Han Y, Zhu Z. Preparation of a high-performance H 2S gas sensor based on CuO/Co 3O 4composite derived from bimetallic MOF. Nanotechnology 2024; 35:195701. [PMID: 38295405 DOI: 10.1088/1361-6528/ad2481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 01/31/2024] [Indexed: 02/02/2024]
Abstract
The bimetallic metal-organic frameworks (MOFs), Cu/Co-MOF, was synthesized through a solvothermal method and calcined to obtain CuO/Co3O4composites. By adjusting the molar ratio between Cu and Co ions, a composite material of CuO/Co3O4(Cu:Co = 1:1) was developed and showed excellent sensing capabilities, and the response reached as high as 196.3 for 10 ppm H2S detection. Furthermore, the optimal operating temperature as low as 40 °C was found. In comparison with the sensors prepared by pristine CuO and pristine Co3O4, the sensor based on CuO/Co3O4composite exhibited a significant response. Additionally, the sensor can detect H2S gas down to 300 ppb. The gas sensing mechanism is discussed in depth from the perspective of p-p heterojunction formation between the p-type CuO and p-type Co3O4. The as-prepared CuO/Co3O4composite-based sensor is expected to find practical application in the low-power monitoring of H2S.
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Affiliation(s)
- Zhanhong Li
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, People's Republic of China
| | - Xu Wang
- National Enterprise Technology Center, Inner Mongolia Erdos Electric Power and Metallurgy Group Company Limited, Ordos 016064, Inner Mongolia, People's Republic of China
| | - Yu Yao
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, People's Republic of China
| | - Jiangang Xin
- School of Energy and Materials, Shanghai Polytechnic University, Shanghai, 201209, People's Republic of China
| | - Lili Xie
- School of Energy and Materials, Shanghai Polytechnic University, Shanghai, 201209, People's Republic of China
| | - Yutong Han
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, People's Republic of China
| | - Zhigang Zhu
- School of Health Science and Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, People's Republic of China
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2
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Momen F, Shayeganfar F, Ramazani A. Boron-rich hybrid BCN nanoribbons for highly ambient uptake of H 2S, HF, NH 3, CO, CO 2 toxic gases. Phys Chem Chem Phys 2024; 26:5262-5288. [PMID: 38264800 DOI: 10.1039/d3cp04767a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Nanomaterials-based gas sensors are widely applied for the monitoring and fast detection of hazardous gases owing to their sensitivity and selectivity. Hydrogen sulfide (H2S), hydrogen fluoride (HF), ammonia (NH3), and carbon monoxide/dioxide (CO/CO2) produced from petroleum fields, sewage, mines, and gasoline are harmful for both human life and environment. With an increase in the emission of these toxic compounds, their real-time monitoring and efficient adsorbent application and storage are very necessary. To this end, we investigated the adsorption characteristic and sensitivity factor of these five toxic gases on armchair and zigzag hybrid boron-carbon-nitride (BCN) nanoribbons with/without boron-rich (B-rich) defects using first principle calculation, where 25%, 33%, and 50% carbon concentration were considered. Our findings reveal that B-rich nanoribbons have strong adsorption energy, charge transfer, and structural deformation owing to the double acceptor of B-rich defects. Moreover, the zigzag and armchair forms of these hybrid BCN nanoribbons show physical adsorption, altering their band gap and phase transition after adsorbing these toxic gases, where B-rich nanoribbons possess high sensitivity to NH3 and CO among other gases. Furthermore, B-rich hybrid nanoribbons have higher CO2 adsorption energy than the standard free energy of CO2 at room temperature. This study suggests that hybrid BCN nanoribbons and B-rich defected structures can be good candidates for the uptake and storage of toxic gases, helping experimental groups to design efficient ambient gas sensors.
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Affiliation(s)
- Fatemeh Momen
- Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran, Iran.
| | - Farzaneh Shayeganfar
- Department of Physics and Energy Engineering, Amirkabir University of Technology, Tehran, Iran.
| | - Ali Ramazani
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
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3
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Adimule V, Dv S, Sharma K, Manhas N, Bathula C. Development of Highest Value of the Measured Efficiency of Mesoporous Petal Shaped Europium (III) Doped Cobalt Tetroxide@Cupric Oxide Hybrid Nanomaterials for Enhanced Room Temperature Photoluminescence and Fluorescence Decay Properties. J Fluoresc 2023:10.1007/s10895-023-03471-1. [PMID: 37897516 DOI: 10.1007/s10895-023-03471-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2023] [Accepted: 10/12/2023] [Indexed: 10/30/2023]
Abstract
In our work, a novel series of europium (III) (Eu3+) (5, 10 and 15 wt %) doped cobalt tetroxide@cupric oxide (Co3O4@CuO) nanomaterials (NMs) were synthesized by facile coprecipitation method. The synthesized NMs were characterized by XRD (X-ray diffraction), FT-IR (Fourier transform infrared), UV (ultraviolet)-visible absorption spectra, XPS (X-ray photoelectron), BET (Brunauer-Emmett-Teller) analytical methods. Crystal structure studies revealed the formation of polycrystalline nature with monoclinic and cubic phase. The morphology studies of Eu3+x:Co3O4@CuO (x = 5, 10 and 15 wt %) showed petal shape nanoparticles (NPs) with agglomeration. Redshift in optical absorption spectra appeared with a significant impact on the optical band gap as Eu3+ concentration increases on Co3O4@CuO bimetallic oxide NMs. The chemical composition and valence state of the elements confirmed from XPS studies detected the presence of Eu, Cu, Co, O and C elements. An increase in the pore size and surface area resulted as the Eu3+ concentration increased on Co3O4@CuO NMs. However, room temperature photoluminescence (RTPL) spectra of Co3O4@CuO bimetallic oxide NMs at two different excitations (λ excitation = 280 nm, 320 nm) showed sharp, strong emission intensities located at near ultraviolet (NUV) region and weak emissions detected at far ultraviolet (FUV) regions of the RTPL spectrum. Further, visible range emission intensities were displayed by Eu3+:Co3O4@CuO (5, 10 and 15 wt %) NMs when exited at 280 nm. The characteristic white light emission peaks in the visible range of the RTPL spectra showed intense blue, green and orange colours. Emission intensity increases with an increase in Eu3+ concentration on Co3O4@CuO bimetallic oxide NMs. The fluorescence (FL) decay spectra of Eu3+ 10wt% and 15 wt%: Co3O4@CuO NMs showed a decay lifetime of 2.54 and 2.31 ns (ns) attributed to the dynamic, ultrafast excitation energy transfer between Eu3+ (dopant) and Co3O4@CuO (host) NMs. It is proposed that enhanced RTPL emission intensity and FL decay behavior of Eu3+x:Co3O4@CuO NMs closely related to the change in the optical band gap, variation in the crystallite size, formation of more number of oxygen vacancies in the crystal structure of hybrid nanomaterials.
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Affiliation(s)
- Vinayak Adimule
- Department of Chemistry, Angadi Institute of Technology and Management (AITM), Savagaon Road, Belagavi, 590009, Karnataka, India.
| | - Sunitha Dv
- Department of Physics, School of Applied Sciences, REVA University, Bangalore, 560064, Karnataka, India
| | - Kalpana Sharma
- Department of Physics, M S Ramaiah Institute of Technology, MSR Nagar, Bangalore, 560054, Karnataka, India
| | - Nidhi Manhas
- Chemistry Discipline, School of Sciences, Indira Gandhi National Open University (IGNOU), Maidan Garhi, 110068, New Delhi, India
| | - Chinna Bathula
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
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Paghi A, Mariani S, Barillaro G. 1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review. Small 2023; 19:e2206100. [PMID: 36703509 DOI: 10.1002/smll.202206100] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 12/04/2022] [Indexed: 06/18/2023]
Abstract
Rapid progress in the synthesis and fundamental understanding of 1D and 2D materials have solicited the incorporation of these nanomaterials into sensor architectures, especially field effect transistors (FETs), for the monitoring of gas and vapor in environmental, food quality, and healthcare applications. Yet, several challenges have remained unaddressed toward the fabrication of 1D and 2D FET gas sensors for real-field applications, which are related to properties, synthesis, and integration of 1D and 2D materials into the transistor architecture. This review paper encompasses the whole assortment of 1D-i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)-and 2D-i.e., graphene, transition metal dichalcogenides (TMD), phosphorene-materials used in FET gas sensors, critically dissecting how the material synthesis, surface functionalization, and transistor fabrication impact on electrical versus sensing properties of these devices. Eventually, pros and cons of 1D and 2D FETs for gas and vapor sensing applications are discussed, pointing out weakness and highlighting future directions.
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Affiliation(s)
- Alessandro Paghi
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Stefano Mariani
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
| | - Giuseppe Barillaro
- Dipartimento di Ingegneria dell'Informazione, via G. Caruso 16, Pisa, 56122, Italy
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Wu Y, Li J, Lv M, Zhang X, Gao R, Guo C, Cheng X, Zhou X, Xu Y, Gao S, Major Z, Huo L. Selective detection of trace carbon monoxide at room temperature based on CuO nanosheets exposed to (111) crystal facets. J Hazard Mater 2023; 442:130041. [PMID: 36166911 DOI: 10.1016/j.jhazmat.2022.130041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Revised: 09/18/2022] [Accepted: 09/19/2022] [Indexed: 06/16/2023]
Abstract
In recent years, carbon monoxide (CO) intoxication incidents occur frequently, and the sensitive detection of CO is particularly significant. At present, most reported carbon monoxide (CO) sensors meet the disadvantage of high working temperature. It is always a challenge to realize the sensitive detection of carbon monoxide at room temperature. In this study, CuO nanosheets exposed more (111) active crystal facets and oxygen vacancy defects were synthesized by a simple and environmentally friendly one-step hydrothermal method. The sensor has good comprehensive gas sensing performance, compared with other sensors that can detect CO at room temperature. The response value to 100 ppm CO at room temperature is as high as 39.6. In addition, it also has excellent selectivity, low detection limit (100 ppb), good reproducibility, moisture resistance and long-term stability (60 days). This excellent gas sensing performance is attributed to the special structural characteristics of 2D materials and the synergistic effect of more active crystal facets exposed on the crystal surface and oxygen vacancy defects. Therefore, it is expected to become a promising sensitive material for rapid and accurate detection of trace CO gas under low energy consumption, reduce the risk of poisoning, and then effectively protect human life safety.
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Affiliation(s)
- Yuanyuan Wu
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Ji Li
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Mingsong Lv
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Xianfa Zhang
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Rui Gao
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Chuanyu Guo
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Xiaoli Cheng
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Xin Zhou
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yingming Xu
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China.
| | - Shan Gao
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China
| | - Zoltán Major
- Institute of Polymer Product Engineering, Johannes Kepler University Linz, Austria
| | - Lihua Huo
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, China.
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Kabir MH, Ibrahim H, Ayon SA, Billah MM, Neaz S. Structural, nonlinear optical and antimicrobial properties of sol-gel derived, Fe-doped CuO thin films. Heliyon 2022; 8:e10609. [PMID: 36148277 PMCID: PMC9485048 DOI: 10.1016/j.heliyon.2022.e10609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Revised: 04/20/2022] [Accepted: 09/07/2022] [Indexed: 11/17/2022] Open
Abstract
Undoped and Fe-doped CuO thin films with different weight ratios (3, 6, and 9 wt.% of Fe) were deposited onto glass substrates using the sol-gel spin coating technique. X-ray diffraction analysis of these samples indicated that all the films were polycrystalline, and crystallite size decreased with doping concentration. As revealed by scanning electron microscopy, Fe doping increased average particle size and improved size distribution in films. The bandgap of undoped CuO thin film was tuned from 3.48 to 2.79 by the addition of 9 wt.% Fe, and reasonable explanations have been presented. Optical parameters, such as refractive index, extinction coefficient, dielectric constant, and optical conductivity, were calculated for optoelectronic applications. Finally, antimicrobial properties were measured for their possibility to be used as disinfectants, and the antifungal activity of Fe-doped CuO thin films was shown to be more effective.
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Affiliation(s)
- Mohammad Humaun Kabir
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
| | - Humayra Ibrahim
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
| | - Sikder Ashikuzzaman Ayon
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
| | - Md Muktadir Billah
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
| | - Sharif Neaz
- Department of Chemistry, Dhaka Commerce College, Dhaka, Bangladesh
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7
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Kny E, Reiner-rozman C, Dostalek J, Hassel A, Nöhammer C, Pfaffeneder-mantai F, Szunerits S, Weber V, Knoll W, Kleber C. State of the Art of Chemosensors in a Biomedical Context. Chemosensors 2022; 10:199. [DOI: 10.3390/chemosensors10060199] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Healthcare is undergoing large transformations, and it is imperative to leverage new technologies to support the advent of personalized medicine and disease prevention. It is now well accepted that the levels of certain biological molecules found in blood and other bodily fluids, as well as in exhaled breath, are an indication of the onset of many human diseases and reflect the health status of the person. Blood, urine, sweat, or saliva biomarkers can therefore serve in early diagnosis of diseases such as cancer, but also in monitoring disease progression, detecting metabolic disfunctions, and predicting response to a given therapy. For most point-of-care sensors, the requirement that patients themselves can use and apply them is crucial not only regarding the diagnostic part, but also at the sample collection level. This has stimulated the development of such diagnostic approaches for the non-invasive analysis of disease-relevant analytes. Considering these timely efforts, this review article focuses on novel, sensitive, and selective sensing systems for the detection of different endogenous target biomarkers in bodily fluids as well as in exhaled breath, which are associated with human diseases.
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Jung G, Hong S, Jeong Y, Shin W, Park J, Kim D, Lee JH. Highly Selective and Low-Power Carbon Monoxide Gas Sensor Based on the Chain Reaction of Oxygen and Carbon Monoxide to WO 3. ACS Appl Mater Interfaces 2022; 14:17950-17958. [PMID: 35385642 DOI: 10.1021/acsami.1c25221] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Carbon monoxide (CO) poisoning can easily occur in industrial and domestic settings, causing headaches, loss of consciousness, or death from overexposure. Commercially available CO gas sensors consume high power (typically 38 mW), whereas low-power gas sensors using nanostructured materials with catalysts lack reliability and uniformity. A low-power (1.8 mW @ 392 °C), sensitive, selective, reliable, and practical CO gas sensor is presented. The sensor adopts floated WO3 film as a sensing material to utilize the unique reaction of lattice oxide of WO3 with CO gas. The sensor locally modulates the electron concentration in the WO3 film, allowing O2 and CO gases to react primarily in different sensing areas. Electrons generated by the CO gas reaction can be consumed for O2 gas adsorption in a remote area, and this promotes the additional reaction of CO gas, boosting sensitivity and selectivity. The proposed sensor exhibits a 39.5 times higher response than the conventional resistor-type gas sensor fabricated on the same wafer. As a proof of concept, sensors with In2O3 film are fabricated, and the proposed sensor platform shows no advantage in detecting CO gas. Fabrication of the proposed sensor is reproducible and inexpensive due to conventional silicon-based processes, making it attractive for practical applications.
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Affiliation(s)
- Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Yujeong Jeong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Wonjun Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Jinwoo Park
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Donghee Kim
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea
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Bang J, Jung Y, Kim H, Kim D, Cho M, Ko SH. Multi-Bandgap Monolithic Metal Nanowire Percolation Network Sensor Integration by Reversible Selective Laser-Induced Redox. Nanomicro Lett 2022; 14:49. [PMID: 35076794 PMCID: PMC8789997 DOI: 10.1007/s40820-021-00786-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 12/07/2021] [Indexed: 05/05/2023]
Abstract
Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning. However, the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure. The ideal electronics should not have defective interfaces of dissimilar materials. In this study, we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor-metal interface by reversible selective laser-induced redox (rSLIR) method. Furthermore, rSLIR can control the oxidation state of transition metal (Cu) to yield semiconductors with two different bandgap states (Cu2O and CuO with bandgaps of 2.1 and 1.2 eV, respectively), which may allow multifunctional sensors with multiple bandgaps from the same materials. This novel method enables the seamless integration of single-phase Cu, Cu2O, and CuO, simultaneously while allowing reversible, selective conversion between oxidation states by simply shining laser light. Moreover, we fabricated a flexible monolithic metal-semiconductor-metal multispectral photodetector that can detect multiple wavelengths. The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.
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Affiliation(s)
- Junhyuk Bang
- Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea
| | - Yeongju Jung
- Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea
| | - Hyungjun Kim
- Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Dongkwan Kim
- Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea
| | - Maenghyo Cho
- Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Seung Hwan Ko
- Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea.
- Institute of Advanced Machines and Design, Institute of Engineering Research, Seoul National University, Seoul, 08826, Republic of Korea.
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Zhang G, Zeng H, Liu J, Nagashima K, Takahashi T, Hosomi T, Tanaka W, Yanagida T. Nanowire-based sensor electronics for chemical and biological applications. Analyst 2021; 146:6684-6725. [PMID: 34667998 DOI: 10.1039/d1an01096d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Detection and recognition of chemical and biological species via sensor electronics are important not only for various sensing applications but also for fundamental scientific understanding. In the past two decades, sensor devices using one-dimensional (1D) nanowires have emerged as promising and powerful platforms for electrical detection of chemical species and biologically relevant molecules due to their superior sensing performance, long-term stability, and ultra-low power consumption. This paper presents a comprehensive overview of the recent progress and achievements in 1D nanowire synthesis, working principles of nanowire-based sensors, and the applications of nanowire-based sensor electronics in chemical and biological analytes detection and recognition. In addition, some critical issues that hinder the practical applications of 1D nanowire-based sensor electronics, including device reproducibility and selectivity, stability, and power consumption, will be highlighted. Finally, challenges, perspectives, and opportunities for developing advanced and innovative nanowire-based sensor electronics in chemical and biological applications are featured.
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Affiliation(s)
- Guozhu Zhang
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan.
| | - Hao Zeng
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan.
| | - Jiangyang Liu
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan.
| | - Kazuki Nagashima
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan. .,JST-PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Tsunaki Takahashi
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan. .,JST-PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Takuro Hosomi
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan. .,JST-PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Wataru Tanaka
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan.
| | - Takeshi Yanagida
- Department of Applied Chemistry, Graduate School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan. .,Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-Koen, Kasuga, Fukuoka, 816-8580, Japan
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11
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Meng J, Li Q, Huang J, Li Z. Tunable Schottky barrier height of a Pt-CuO junction via a triboelectric nanogenerator. Nanoscale 2021; 13:17101-17105. [PMID: 34632472 DOI: 10.1039/d1nr04752c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tuning Schottky barrier height is crucial to optimize the performance of Schottky junction devices. Here, we demonstrate that the Schottky barrier height can be tuned with the voltage from a triboelectric nanogenerator (TENG). Schottky barrier heights at both ends are increased after the treatment with the voltage generated by the TENG. The electric field generated by the impulse voltage of the TENG drives the diffusion of the ionized oxygen vacancy in a CuO nanowire, which induces the nonuniform distribution of the ionized oxygen vacancy. The positively charged oxygen vacancy accumulates at the contacted interface of Pt and the CuO nanowire, and it impels the conduction and valence bands to bend downwards. The Schottky barrier height is raised. A theoretical model based on the energy band diagram is proposed to explain this phenomenon. This method offers a simple and effective avenue to tune the Schottky barrier height. It opens up the possibility to develop a high-performance Schottky sensor by tuning the Schottky barrier height.
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Affiliation(s)
- Jianping Meng
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Qi Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- College of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, China
| | - Jing Huang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- College of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, China
| | - Zhou Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, P.R. China
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12
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Affiliation(s)
- K. S. Shalini Devi
- Centre for Nanotechnology and Advanced Biomaterials (CeNTAB) SASTRA Deemed University Thanjavur India – 613401
- School of Chemical and Biotechnology SASTRA Deemed University Thanjavur India – 613401
| | - Aadhav Anantharamakrishnan
- Centre for Nanotechnology and Advanced Biomaterials (CeNTAB) SASTRA Deemed University Thanjavur India – 613401
- School of Chemical and Biotechnology SASTRA Deemed University Thanjavur India – 613401
| | - Uma Maheswari Krishnan
- Centre for Nanotechnology and Advanced Biomaterials (CeNTAB) SASTRA Deemed University Thanjavur India – 613401
- School of Chemical and Biotechnology SASTRA Deemed University Thanjavur India – 613401
- School of Arts Science and Humanities SASTRA Deemed University Thanjavur India – 613401
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13
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Nami-Ana SF, Nasresfahani S, Tashkhourian J, Shamsipur M, Zargarpour Z, Sheikhi MH. Nanofibers of Polyaniline and Cu(II)-l-Aspartic Acid for a Room-Temperature Carbon Monoxide Gas Sensor. ACS Appl Mater Interfaces 2021; 13:39791-39805. [PMID: 34397209 DOI: 10.1021/acsami.1c07116] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In the present study, the carbon monoxide (CO) sensing property of Cu(II)-l-aspartic acid nanofibers/polyaniline (PANI) nanofibers composite was investigated at room temperature. The nanofiber composite was formed through the ultrasound mixing of emeraldine salt PANI nanofibers and Cu(II)-l-aspartic acid nanofibers, which were synthesized by using a polymerization process and simple self-assembly method, respectively. The nanofibers composite demonstrated a branched structure in which the Cu(II)-l-aspartic acid nanofiber framework is similar to the trunk of a tree and the polyaniline nanofibers is like its branches. It seems that this special structure and one-dimension/one-dimension interface are suitable for gas adsorption and sensing. The performance of the prepared sensor toward CO gas was investigated at room temperature in a wide concentration range (200-8000 ppm). The experimental results indicate that the incorporation of amino acid-based copper metal-biomolecule framework nanofibers to PANI nanofibers enhances the response value (12.41% to 4000 ppm), yielding good selectivity and acceptable response and recovery characteristics (220 s/240 s) at room temperature. The detection limit of Cu(II)-l-aspartic acid nanofibers/PANI nanofibers sensor for carbon monoxide is obtained at 120 ppm.
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Affiliation(s)
- S F Nami-Ana
- Department of Chemistry, College of Sciences, Shiraz University, Shiraz 71456, Iran
| | - Sh Nasresfahani
- Department of Electrical and Computer Engineering, Golpayegan College of Engineering, Isfahan University of Technology, Golpayegan 87717-67498, Iran
| | - J Tashkhourian
- Department of Chemistry, College of Sciences, Shiraz University, Shiraz 71456, Iran
| | - M Shamsipur
- Department of Chemistry, Razi University, Kermanshah 67149, Iran
| | - Z Zargarpour
- School of Electrical and Computer Engineering, Shiraz University, Shiraz 71456, Iran
| | - M H Sheikhi
- School of Electrical and Computer Engineering, Shiraz University, Shiraz 71456, Iran
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14
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Umar A, Algadi H, Kumar R, Akhtar MS, Ibrahim AA, Albargi H, Alhamami MAM, Alsuwian T, Zeng W. Ultrathin Leaf-Shaped CuO Nanosheets Based Sensor Device for Enhanced Hydrogen Sulfide Gas Sensing Application. Chemosensors 2021; 9:221. [DOI: 10.3390/chemosensors9080221] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Abstract
Herein, a simple, economical and low temperature synthesis of leaf-shaped CuO nanosheets is reported. As-synthesized CuO was examined through different techniques including field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), X-ray diffraction (XRD), fourier transform infrared spectroscopic (FTIR) and Raman spectroscopy to ascertain the purity, crystal phase, morphology, vibrational, optical and diffraction features. FESEM and TEM images revealed a thin leaf-like morphology for CuO nanosheets. An interplanar distance of ~0.25 nm corresponding to the (110) diffraction plane of the monoclinic phase of the CuO was revealed from the HRTEM images XRD analysis indicated a monoclinic tenorite crystalline phase of the synthesized CuO nanosheets. The average crystallite size for leaf-shaped CuO nanosheets was found to be 14.28 nm. Furthermore, a chemo-resistive-type gas sensor based on leaf-shaped CuO nanosheets was fabricated to effectively and selectively detect H2S gas. The fabricated sensor showed maximum gas response at an optimized temperature of 300 °C towards 200 ppm H2S gas. The corresponding response and recovery times were 97 s and 100 s, respectively. The leaf-shaped CuO nanosheets-based gas sensor also exhibited excellent selectivity towards H2S gas as compared to other analyte gases including NH3, CH3OH, CH3CH2OH, CO and H2. Finally, we have proposed a gas sensing mechanism based upon the formation of chemo-resistive CuO nanosheets.
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15
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Ingale N, Tavhare P, Solimannejad M, Chaudhari A. Titanium-benzene complex as a molecular oxide adsorbent: a first principles approach. J Mol Model 2021; 27:242. [PMID: 34370101 DOI: 10.1007/s00894-021-04869-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Accepted: 08/02/2021] [Indexed: 10/20/2022]
Abstract
CO, SO, NO, CO2, SO2, and NO2 gas sensing properties of Ti-benzene (C6H6Ti) complex are studied with first principles calculations by analyzing change in structural parameters, electronic properties, and charge transfer. Adsorption of all six oxide molecules on C6H6Ti complex is found to be thermodynamically favorable at ambient conditions. The Gibbs free energy-corrected adsorption energy range for oxide molecules is found be 0.6-5.9 eV. The SO2 transfers maximum charge to Ti metal, i.e., 0.36 (e-) as compare to other oxides. The binding energy of Ti atom to benzene ring remains higher even after adsorption of oxide gas molecules. The higher values of HOMO-LUMO gap show that oxide-adsorbed complexes are chemically stable. The ADMP-MD simulations show that all oxide molecules remain adsorbed on Ti-benzene complex during the simulations for the temperature range 300-500 K. The Ti-benzene complex shows considerable gas sensing properties at ambient conditions.
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Affiliation(s)
- Nilesh Ingale
- Department of Physics, The Institute of Science, Dr. Homi Bhabha State University, Mumbai, 400032, India
| | - Priyanka Tavhare
- Department of Physics, The Institute of Science, Dr. Homi Bhabha State University, Mumbai, 400032, India
| | - Mohammad Solimannejad
- Department of Chemistry, Faculty of Science, Arak University, 38156-8-8349, Arak, Iran.
| | - Ajay Chaudhari
- Department of Physics, The Institute of Science, Dr. Homi Bhabha State University, Mumbai, 400032, India.
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16
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Liu W, Tao Z, Wang D, Liu Q, Zhang Y, Zhang Y, Dong A. Immobilization of Cu (II) via a graphene oxide-supported strategy for antibacterial reutilization with long-term efficacy. J Hazard Mater 2021; 410:124601. [PMID: 33250312 DOI: 10.1016/j.jhazmat.2020.124601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2020] [Revised: 11/11/2020] [Accepted: 11/13/2020] [Indexed: 06/12/2023]
Abstract
The past several decades have witnessed tremendous research to discover ways for controlling heavy metal pollution, but most of the strategies do not involve reuse of the captured heavy metals. Herein, we propose a graphene oxide -based strategy for the effective removal of Cu2+ ions from water, coupled with their reuse as an antibacterial agent. Using GO nanosheets as an adsorbent and nanosupport, the Cu2+ ions were effectively extracted from water (>99.9%) and reduced in situ to copper nanoparticles (Cu NPs) containing both crystalline Cu and Cu2O. The as-captured Cu NPs showed efficient in vitro antibacterial ability against Escherichia coli, reducing the bacteria from 109 to 101 CFU mL-1 by using 1 mg mL-1 Cu NPs/GO NSs for 1 h. The minimum inhibitory concentration determined to be only 16 μg mL-1. For practical applications, Cu recovered from wastewater could reduce bacteria by 8 log CFU in 1 h. The recovered Cu was still able to reduce the bacteria by 7 log CFU after 2 months of storage in an argon atmosphere. This strategy of extracting heavy metals and subsequently reutilizing to kill bacteria will be of great significance for environmental remediation and public healthcare.
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Affiliation(s)
- Wenxin Liu
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Zhaofan Tao
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Duo Wang
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Qianqian Liu
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Yinan Zhang
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Yanling Zhang
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China
| | - Alideertu Dong
- College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, People's Republic of China; Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot 010021, People's Republic of China.
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Abstract
Metal oxide semiconductors have found widespread applications in chemical sensors based on electrical transduction principles, in particular for the detection of a large variety of gaseous analytes, including environmental pollutants and hazardous gases. This review recapitulates the progress in copper oxide nanomaterial-based devices, while discussing decisive factors influencing gas sensing properties and performance. Literature reports on the highly sensitive detection of several target molecules, including volatile organic compounds, hydrogen sulfide, carbon monoxide, carbon dioxide, hydrogen and nitrogen oxide from parts-per-million down to parts-per-billion concentrations are compared. Physico-chemical mechanisms for sensing and transduction are summarized and prospects for future developments are outlined.
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Hussain M, Jeong W, Kang IS, Choi KK, Jaffery SHA, Ali A, Hussain T, Ayaz M, Hussain S, Jung J. Highly Fast Response of Pd/Ta 2O 5/SiC and Pd/Ta 2O 5/Si Schottky Diode-Based Hydrogen Sensors. Sensors (Basel) 2021; 21:s21041042. [PMID: 33546357 PMCID: PMC7913499 DOI: 10.3390/s21041042] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 01/25/2021] [Accepted: 01/31/2021] [Indexed: 11/24/2022]
Abstract
Herein, the fabrication of a novel highly sensitive and fast hydrogen (H2) gas sensor, based on the Ta2O5 Schottky diode, is described. First, Ta2O5 thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (RF) sputtering method. Then, Pd and Ni are respectively deposited on the front and back of the device. The deposited Pd serves as a H2 catalyst, while the Ni functions as an Ohmic contact. The devices are then tested under various concentrations of H2 gas at operating temperatures of 300, 500, and 700 °C. The results indicate that the Pd/Ta2O5 Schottky diode on the SiC substrate exhibits larger concentration and temperature sensitivities than those of the device based on the Si substrate. In addition, the optimum operating temperature of the Pd/Ta2O5 Schottky diode for use in H2 sensing is shown to be about 300 °C. At this optimum temperature, the dynamic responses of the sensors towards various concentrations of H2 gas are then examined under a constant bias current of 1 mA. The results indicate a fast rise time of 7.1 s, and a decay of 18 s, for the sensor based on the SiC substrate.
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Affiliation(s)
- Muhammad Hussain
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Woonyoung Jeong
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Il-Suk Kang
- National Nanofab Center, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea;
| | - Kyeong-Keun Choi
- NINT (National Institute for Nanomaterials Technology), Pohang University of Science and Technology, Pohang 37673, Korea;
| | - Syed Hassan Abbas Jaffery
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Asif Ali
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Tassawar Hussain
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Muhammad Ayaz
- Department of Electronic Engineering, Semyung University, Chungcheongbuk-do 27136, Korea;
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
| | - Jongwan Jung
- Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea; (M.H.); (W.J.); (S.H.A.J.); (A.A.); (T.H.); (S.H.)
- Correspondence:
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Wang Y, Duan L, Deng Z, Liao J. Electrically Transduced Gas Sensors Based on Semiconducting Metal Oxide Nanowires. Sensors (Basel) 2020; 20:E6781. [PMID: 33260973 PMCID: PMC7729516 DOI: 10.3390/s20236781] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/27/2020] [Revised: 11/20/2020] [Accepted: 11/23/2020] [Indexed: 12/20/2022]
Abstract
Semiconducting metal oxide-based nanowires (SMO-NWs) for gas sensors have been extensively studied for their extraordinary surface-to-volume ratio, high chemical and thermal stabilities, high sensitivity, and unique electronic, photonic and mechanical properties. In addition to improving the sensor response, vast developments have recently focused on the fundamental sensing mechanism, low power consumption, as well as novel applications. Herein, this review provides a state-of-art overview of electrically transduced gas sensors based on SMO-NWs. We first discuss the advanced synthesis and assembly techniques for high-quality SMO-NWs, the detailed sensor architectures, as well as the important gas-sensing performance. Relationships between the NWs structure and gas sensing performance are established by understanding general sensitization models related to size and shape, crystal defect, doped and loaded additive, and contact parameters. Moreover, major strategies for low-power gas sensors are proposed, including integrating NWs into microhotplates, self-heating operation, and designing room-temperature gas sensors. Emerging application areas of SMO-NWs-based gas sensors in disease diagnosis, environmental engineering, safety and security, flexible and wearable technology have also been studied. In the end, some insights into new challenges and future prospects for commercialization are highlighted.
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Affiliation(s)
- Ying Wang
- Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China;
| | - Li Duan
- Beijing Key Laboratory of Security and Privacy in Intelligent Transportation, Beijing Jiaotong University, Beijing 100044, China;
| | - Zhen Deng
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianhui Liao
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;
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Yen TJ, Chin A, Gritsenko V. High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer. Nanomaterials (Basel) 2020; 10:nano10112145. [PMID: 33126463 PMCID: PMC7694091 DOI: 10.3390/nano10112145] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2020] [Revised: 10/24/2020] [Accepted: 10/24/2020] [Indexed: 11/16/2022]
Abstract
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs.
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Affiliation(s)
- Te Jui Yen
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
| | - Albert Chin
- Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
- Correspondence: ; Tel.: +886-3-5731841
| | - Vladimir Gritsenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia;
- Novosibirsk State University, 630090 Novosobirsk, Russia
- Novosibirsk State Technical University, 630020 Novosibirsk, Russia
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21
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Jerome R, Keerthivasan PV, Murugan N, Devi NR, Sundramoorthy AK. Preparation of Stable CuO/Boron Nitride Nanocomposite Modified Electrode for Selective Electrochemical Detection of L–Cysteine. ChemistrySelect 2020. [DOI: 10.1002/slct.202002105] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Affiliation(s)
- Rajendran Jerome
- Department of ChemistrySRM Institute of Science and Technology Kattankulathur 603 203 Tamil Nadu India
| | | | - Nagaraj Murugan
- Department of ChemistrySRM Institute of Science and Technology Kattankulathur 603 203 Tamil Nadu India
| | - Nagarajan Ramila Devi
- Department of ChemistrySRM Institute of Science and Technology Kattankulathur 603 203 Tamil Nadu India
| | - Ashok K. Sundramoorthy
- Department of ChemistrySRM Institute of Science and Technology Kattankulathur 603 203 Tamil Nadu India
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Peng F, Sun Y, Lu Y, Yu W, Ge M, Shi J, Cong R, Hao J, Dai N. Studies on Sensing Properties and Mechanism of CuO Nanoparticles to H 2S Gas. Nanomaterials (Basel) 2020; 10:E774. [PMID: 32316393 PMCID: PMC7221834 DOI: 10.3390/nano10040774] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 04/10/2020] [Accepted: 04/14/2020] [Indexed: 11/17/2022]
Abstract
In this work, the high crystalline copper oxide (CuO) nanoparticles were fabricated by a hydrothermal method, and their structural properties were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The sensing results show that CuO nanoparticles exhibit enhanced sensitivity and good selectivity for hydrogen sulfide (H2S) gas at a low temperature. There are two working mechanisms involved in the H2S sensing based on CuO nanoparticle sensors. They are the H2S oxidation mechanism and the copper sulphide (CuS) formation mechanism, respectively. The two sensing mechanisms collectively enhance the sensor's response in the H2S sensing process. The Cu-S bonding is stable and cannot break spontaneously at a low temperature. Therefore, the CuS formation inhibits the sensor's recovery process. Such inhibition gradually enhances as the gas concentration increases from 0.2 ppm to 5 ppm, and it becomes weaker as the operating temperature rises from 40 °C to 250 °C. The XPS results confirmed the CuS formation phenomenon, and the micro Raman spectra demonstrated that the formation of CuS bonding and its decomposition can be effectively triggered by a thermal effect. Gas-sensing mechanism analysis supplied abundant cognition for the H2S sensing phenomena based on CuO materials.
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Affiliation(s)
- Fang Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
- School of Electronic Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan Sun
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
| | - Yue Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Weiwei Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
- School of Electronic Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meiying Ge
- National Engineering Research Center for Nanotechnology, No. 28 East Jiang Chuan Road, Shanghai 200241, China;
| | - Jichao Shi
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, China;
| | - Rui Cong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
| | - Jiaming Hao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (F.P.); (Y.L.); (W.Y.); (R.C.); (J.H.)
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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Wang H, Wang Y, Hou X, Xiong B. Bioelectronic Nose Based on Single-Stranded DNA and Single-Walled Carbon Nanotube to Identify a Major Plant Volatile Organic Compound (p-Ethylphenol) Released by Phytophthora Cactorum Infected Strawberries. Nanomaterials (Basel) 2020; 10:nano10030479. [PMID: 32155991 PMCID: PMC7153259 DOI: 10.3390/nano10030479] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Revised: 02/24/2020] [Accepted: 03/03/2020] [Indexed: 12/20/2022]
Abstract
The metabolic activity in plants or fruits is associated with volatile organic compounds (VOCs), which can help identify the different diseases. P-ethylphenol has been demonstrated as one of the most important VOCs released by the Phytophthora cactorum (P. cactorum) infected strawberries. In this study, a bioelectronic nose based on a gas biosensor array and signal processing model was developed for the noninvasive diagnostics of the P. cactorum infected strawberries, which could overcome the limitations of the traditional spectral analysis methods. The gas biosensor array was fabricated using the single-wall carbon nanotubes (SWNTs) immobilized on the surface of field-effect transistor, and then non-covalently functionalized with different single-strand DNAs (ssDNA) through π–π interaction. The characteristics of ssDNA-SWNTs were investigated using scanning electron microscope, atomic force microscopy, Raman, UV spectroscopy, and electrical measurements, indicating that ssDNA-SWNTs revealed excellent stability and repeatability. By comparing the responses of different ssDNA-SWNTs, the sensitivity to P-ethylphenol was significantly higher for the s6DNA-SWNTs than other ssDNA-SWNTs, in which the limit of detection reached 0.13% saturated vapor of P-ethylphenol. However, s6DNA-SWNTs can still be interfered with by other VOCs emitted by the strawberries in the view of poor selectivity. The bioelectronic nose took advantage of the different sensitivities of different gas biosensors to different VOCs. To improve measure precision, all ssDNA-SWNTs as a gas biosensor array were applied to monitor the different VOCs released by the strawberries, and the detecting data were processed by neural network fitting (NNF) and Gaussian process regression (GPR) with high accuracy.
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Affiliation(s)
- Hui Wang
- State Key Laboratory of Animal Nutrition, Institute of Animal Sciences, Chinese Academy of Agricultural Sciences, Beijing 100193, China;
- Research Institute of Wood Industry, Chinese Academy of Forestry, Beijing 100091, China;
- Correspondence: or (H.W.); (B.X.); Tel.: +86-010-62811680 (B.X.)
| | - Yue Wang
- State Key Laboratory of Animal Nutrition, Institute of Animal Sciences, Chinese Academy of Agricultural Sciences, Beijing 100193, China;
| | - Xiaopeng Hou
- Research Institute of Wood Industry, Chinese Academy of Forestry, Beijing 100091, China;
| | - Benhai Xiong
- State Key Laboratory of Animal Nutrition, Institute of Animal Sciences, Chinese Academy of Agricultural Sciences, Beijing 100193, China;
- Correspondence: or (H.W.); (B.X.); Tel.: +86-010-62811680 (B.X.)
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Yang X, Cheng H. Recent Developments of Flexible and Stretchable Electrochemical Biosensors. Micromachines (Basel) 2020; 11:E243. [PMID: 32111023 PMCID: PMC7143805 DOI: 10.3390/mi11030243] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2019] [Revised: 02/20/2020] [Accepted: 02/24/2020] [Indexed: 12/14/2022]
Abstract
The skyrocketing popularity of health monitoring has spurred increasing interest in wearable electrochemical biosensors. Compared with the traditionally rigid and bulky electrochemical biosensors, flexible and stretchable devices render a unique capability to conform to the complex, hierarchically textured surfaces of the human body. With a recognition element (e.g., enzymes, antibodies, nucleic acids, ions) to selectively react with the target analyte, wearable electrochemical biosensors can convert the types and concentrations of chemical changes in the body into electrical signals for easy readout. Initial exploration of wearable electrochemical biosensors integrates electrodes on textile and flexible thin-film substrate materials. A stretchable property is needed for the thin-film device to form an intimate contact with the textured skin surface and to deform with various natural skin motions. Thus, stretchable materials and structures have been exploited to ensure the effective function of a wearable electrochemical biosensor. In this mini-review, we summarize the recent development of flexible and stretchable electrochemical biosensors, including their principles, representative application scenarios (e.g., saliva, tear, sweat, and interstitial fluid), and materials and structures. While great strides have been made in the wearable electrochemical biosensors, challenges still exist, which represents a small fraction of opportunities for the future development of this burgeoning field.
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Affiliation(s)
- Xudong Yang
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing 400044, China;
- Department of Automotive Engineering, Beihang University, Beijing 100191, China
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Huanyu Cheng
- Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing 400044, China;
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, USA
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
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25
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Abstract
This review presents the recent development of printed gas sensors based on functional inks.
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Affiliation(s)
- Jie Dai
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | | | | | - Qian Sun
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE)
| | - Wenbei Yu
- Cambridge Graphene Centre
- University of Cambridge
- Cambridge CB3 0FA
- UK
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
| | - Yu Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Bao-Lian Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Tawfique Hasan
- Cambridge Graphene Centre
- University of Cambridge
- Cambridge CB3 0FA
- UK
| | - Xiao Huang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Wei Huang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE)
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Sun J, Peng M, Zhang Y, Zhang L, Peng R, Miao C, Liu D, Han M, Feng R, Ma Y, Dai Y, He L, Shan C, Pan A, Hu W, Yang ZX. Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors. Nano Lett 2019; 19:5920-5929. [PMID: 31374165 DOI: 10.1021/acs.nanolett.9b01503] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V-1 s-1, a high responsivity of 61 A W-1, and fast rise and decay times of 195.1 and 380.4 μs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.
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Affiliation(s)
- Jiamin Sun
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Meng Peng
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
- Wuhan National Laboratory for Optoelectronics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Lei Zhang
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Rui Peng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Chengcheng Miao
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Dong Liu
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
| | - Mingming Han
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
| | - Runfa Feng
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Yandong Ma
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Ying Dai
- School of Physics , Shandong University , Jinan 250100 , P. R. China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System , Southeast University , Nanjing 210096 , P. R. China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering , Zhengzhou University , Zhengzhou 450001 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , P. R. China
| | - Weida Hu
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , P. R. China
| | - Zai-Xing Yang
- School of Microelectronics , Shandong University , Jinan 250100 , P. R. China
- Shenzhen Research Institute of Shandong University , Shenzhen 518057 , P. R. China
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Kao YT, Yang SM, Lu KC. Synthesis and Photocatalytic Properties of CuO-CuS Core-Shell Nanowires. Materials (Basel) 2019; 12:ma12071106. [PMID: 30987124 PMCID: PMC6479540 DOI: 10.3390/ma12071106] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2019] [Revised: 03/26/2019] [Accepted: 04/01/2019] [Indexed: 11/16/2022]
Abstract
In this study, an efficient method to synthesize CuO-CuS core-shell nanowires by two-step annealing process was reported. CuO nanowires were prepared on copper foil via thermal oxidation in a three-zone horizontal tube furnace. To obtain larger surface area for photocatalytic applications, we varied four processing parameters, finding that growth at 550 °C for 3 h with 16 °C/min of the ramping rate under air condition led to CuO nanowires of appropriate aspect ratio and number density. The second step, sulfurization process, was conducted to synthesize CuO-CuS core-shell nanowires by annealing with sulfur powder at 250 °C for 30 min under lower pressure. High-resolution transmission electron microscopy studies show that a 10 nm thick CuS shell formed and the growth mechanism of the nanowire heterostructure has been proposed. With BET, the surface area was measured to be 135.24 m2·g−1. The photocatalytic properties were evaluated by the degradation of methylene blue (MB) under visible light irradiation. As we compared CuO-CuS core-shell nanowires with CuO nanowires, the 4-hour degradation rate was enhanced from 67% to 89%. This could be attributed to more effective separation of photoinduced electron and hole pairs in the CuO-CuS heterostructure. The results demonstrated CuO-CuS core-shell nanowires as a promising photocatalyst for dye degradation in polluted water.
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Affiliation(s)
- Yuan-Tse Kao
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
| | - Shu-Meng Yang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
| | - Kuo-Chang Lu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
- Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan.
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28
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Fritz-Popovski G, Sosada-Ludwikowska F, Köck A, Keckes J, Maier GA. Study of CuO Nanowire Growth on Different Copper Surfaces. Sci Rep 2019; 9:807. [PMID: 30692601 PMCID: PMC6349934 DOI: 10.1038/s41598-018-37172-8] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2018] [Accepted: 11/14/2018] [Indexed: 11/29/2022] Open
Abstract
Cupric oxide (CuO) nanowires were produced by thermal oxidation of copper surfaces at temperatures up to 450 °C. Three different surfaces, namely a copper foil as well as evaporation deposited copper and an application relevant sputtered copper film on Si(100) substrates were characterized ex-situ before and after the experiment. The development of oxide layers and nanowires were monitored in-situ using grazing incidence small angle X-ray scattering. The number density of nanowires is highest for the sputtered surface and lowest for the surface prepared by evaporation deposition. This can be linked to different oxide grain sizes and copper grain boundary diffusions on the different surfaces. Small grains of the copper substrate and high surface roughness thereby lead to promoted growth of the nanowires.
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Affiliation(s)
- Gerhard Fritz-Popovski
- Materials Center Leoben GmbH, Roseggerstr. 12, 8700, Leoben, Austria.,Institute of Physics, Montanuniversität Leoben, 8700, Leoben, Austria
| | | | - Anton Köck
- Materials Center Leoben GmbH, Roseggerstr. 12, 8700, Leoben, Austria
| | - Jozef Keckes
- Department of Materials Physics, Montanuniversität Leoben, 8700, Leoben, Austria
| | - Günther A Maier
- Materials Center Leoben GmbH, Roseggerstr. 12, 8700, Leoben, Austria.
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29
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Abstract
We have introduced a new fabrication process for a CO gas sensor using a kinetically sprayed Cu thin layer, followed by oxidation at 250 °C.
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Affiliation(s)
- Dahyun Choi
- Department of Materials engineering
- Hanyang University
- Gyeonggi-do
- Republic of Korea
| | - Hyojun Kim
- Department of Materials engineering
- Hanyang University
- Gyeonggi-do
- Republic of Korea
| | - Minhee Son
- Department of Materials engineering
- Hanyang University
- Gyeonggi-do
- Republic of Korea
| | - Hyungsub Kim
- Department of Electrical Engineering
- University of South Carolina
- Columbia
- USA
| | - Hee Chul Lee
- Department of Advanced Materials Engineering
- Korea Polytechnic University
- Gyeonggi-do
- Republic of Korea
| | - Caroline Sunyong Lee
- Department of Materials engineering
- Hanyang University
- Gyeonggi-do
- Republic of Korea
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30
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Tong B, Deng Z, Xu B, Meng G, Shao J, Liu H, Dai T, Shan X, Dong W, Wang S, Zhou S, Tao R, Fang X. Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO 2 Gas Sensors. ACS Appl Mater Interfaces 2018; 10:34727-34734. [PMID: 30207676 DOI: 10.1021/acsami.8b10485] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
p-type ternary oxides can be extensively explored as alternative sensing channels to binary oxides with diverse structural and compositional versatilities. Seeking a novel approach to magnify their sensitivities toward gas molecules, e.g., volatile organic compounds (VOCs), will definitely expand their applications in the frontier area of healthcare and air-quality monitoring. In this work, delafossite CuCrO2 (CCO) nanoparticles with different grain sizes have been utilized as p-type ternary oxide sensors. It was found that singly ionized oxygen vacancies (Vo•) defects, compared with the grain size of CCO nanoparticles, play an important role in enhancing the charge exchange at the VOCs molecules/CCO interface. In addition to suppressing the hole concentration of the sensor channel, the unpaired electron trapped in Vo• provides an active site for chemisorptions of environmental oxygen and VOCs molecules. The synergetic effect is responsible for the observed increase of sensitivity. Furthermore, the sensitive (Vo• defect-rich) CCO sensor exhibits good reproducibility and stability under a moderate operation temperature (<325 °C). Our work highlights that Vo• defects, created via either in situ synthesis or postannealing treatment, could be explored to rationally boost the performance of p-type ternary oxide sensors.
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Affiliation(s)
- Bin Tong
- University of Science and Technology of China , Hefei 230026 , China
| | | | - Bo Xu
- China Pharmaceutical University , Nanjing 211198 , China
| | | | | | - Hongyu Liu
- University of Science and Technology of China , Hefei 230026 , China
| | - Tiantian Dai
- University of Science and Technology of China , Hefei 230026 , China
| | - Xueyan Shan
- University of Science and Technology of China , Hefei 230026 , China
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31
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Hou L, Zhang C, Li L, Du C, Li X, Kang XF, Chen W. CO gas sensors based on p-type CuO nanotubes and CuO nanocubes: Morphology and surface structure effects on the sensing performance. Talanta 2018; 188:41-49. [DOI: 10.1016/j.talanta.2018.05.059] [Citation(s) in RCA: 125] [Impact Index Per Article: 20.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2018] [Revised: 05/10/2018] [Accepted: 05/17/2018] [Indexed: 11/28/2022]
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32
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Ma S, Peng Z, Kitai AH. A CuO Nanowire-Based Alternating Current Oxide Powder Electroluminescent Device with High Stability. Angew Chem Int Ed Engl 2018. [DOI: 10.1002/ange.201805519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Siwei Ma
- Department of Material Science and Engineering; McMaster University; 1280 Main Street West Hamilton Ontario L8S 4L8 Canada
| | - Zhilin Peng
- Department of Engineering Physics; McMaster University; 1280 Main Street West Hamilton Ontario L8S 4L8 Canada
| | - Adrian H. Kitai
- Department of Material Science and Engineering; McMaster University; 1280 Main Street West Hamilton Ontario L8S 4L8 Canada
- Department of Engineering Physics; McMaster University; 1280 Main Street West Hamilton Ontario L8S 4L8 Canada
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33
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Teng F, Hu K, Ouyang W, Fang X. Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials. Adv Mater 2018; 30:e1706262. [PMID: 29888448 DOI: 10.1002/adma.201706262] [Citation(s) in RCA: 107] [Impact Index Per Article: 17.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2017] [Revised: 01/18/2018] [Indexed: 05/03/2023]
Abstract
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
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Affiliation(s)
- Feng Teng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Kai Hu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Weixin Ouyang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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34
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Ma S, Peng Z, Kitai AH. A CuO Nanowire-Based Alternating Current Oxide Powder Electroluminescent Device with High Stability. Angew Chem Int Ed Engl 2018; 57:11267-11272. [PMID: 30059186 DOI: 10.1002/anie.201805519] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2018] [Revised: 07/10/2018] [Indexed: 11/06/2022]
Abstract
An AC-driven powder electroluminescent (EL) device has been achieved by constructing a CuO nanowire-Zn2 GeO4 :Mn phosphor heterogeneous junction. The CuO nanowires enhance the local electric field, resulting in electroluminescence of an oxide-based phosphor in EL devices owing to field injection at the nanowire tips. The CuO nanowire array was synthesized by an in situ thermal oxidation method at 400 °C in air and employed as an electric field enhancement layer in the EL device. The heterogeneous structures were created through drop coating of a phosphor suspension on the CuO nanowire array. The initial EL device tests show good luminescent performance with very promising brightness maintenance for over 360 h, with a loss of luminescent intensity of under 1 % at over 10 cd m-2 luminance. The fabrication method offers the prospect of simple, low-cost, large-scale EL devices with the potential to solve the limited operational lifetime of sulfide-based AC powder EL devices.
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Affiliation(s)
- Siwei Ma
- Department of Material Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L8, Canada
| | - Zhilin Peng
- Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L8, Canada
| | - Adrian H Kitai
- Department of Material Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L8, Canada.,Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario, L8S 4L8, Canada
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35
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Hajimammadov R, Bykov A, Popov A, Juhasz KL, Lorite GS, Mohl M, Kukovecz A, Huuhtanen M, Kordas K. Random networks of core-shell-like Cu-Cu 2O/CuO nanowires as surface plasmon resonance-enhanced sensors. Sci Rep 2018; 8:4708. [PMID: 29549337 PMCID: PMC5856813 DOI: 10.1038/s41598-018-23119-6] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2017] [Accepted: 03/01/2018] [Indexed: 12/20/2022] Open
Abstract
The rapid oxide formation on pristine unprotected copper surfaces limits the direct application of Cu nanomaterials in electronics and sensor assemblies with physical contacts. However, it is not clear whether the growing cuprous (Cu2O) and cupric oxides (CuO) and the formation of core-shell-like Cu-Cu2O/CuO nanowires would cause any compromise for non-contact optical measurements, where light absorption and subsequent charge oscillation and separation take place such as those in surface plasmon-assisted and photocatalytic processes, respectively. Therefore, we analyze how the surface potential of hydrothermally synthetized copper nanowires changes as a function of time in ambient conditions using Kelvin probe force microscopy in dark and under light illumination to reveal charge accumulation on the nanowires and on the supporting gold substrate. Further, we perform finite element modeling of the optical absorption to predict plasmonic behavior of the nanostructures. The results suggest that the core-shell-like Cu-Cu2O/CuO nanowires may be useful both in photocatalytic and in surface plasmon-enhanced processes. Here, by exploiting the latter, we show that regardless of the native surface oxide formation, random networks of the nanowires on gold substrates work as excellent amplification media for surface-enhanced Raman spectroscopy as demonstrated in sensing of Rhodamine 6G dye molecules.
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Affiliation(s)
- Rashad Hajimammadov
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland
| | - Alexander Bykov
- Optoelectronics and Measurement Techniques Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland
| | - Alexey Popov
- Optoelectronics and Measurement Techniques Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland
| | - Koppany L Juhasz
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, Szeged, 6720, Hungary
| | - Gabriela S Lorite
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland
| | - Melinda Mohl
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland
| | - Akos Kukovecz
- Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, Szeged, 6720, Hungary
| | - Mika Huuhtanen
- Environmental and Chemical Engineering Research Unit, Faculty of Technology, University of Oulu, P.O. Box 4300, 90570, Oulu, Finland
| | - Krisztian Kordas
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, 90570, Oulu, Finland.
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36
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Bhattacharjee A, Ahmaruzzaman M. Microwave assisted facile and green route for synthesis of CuO nanoleaves and their efficacy as a catalyst for reduction and degradation of hazardous organic compounds. J Photochem Photobiol A Chem 2018; 353:215-28. [DOI: 10.1016/j.jphotochem.2017.11.018] [Citation(s) in RCA: 44] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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37
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Lin Z, Zhan R, Li L, Liu H, Jia S, Chen H, Tang S, She J, Deng S, Xu N, Chen J. Defect-concentration dependence of electrical transport mechanisms in CuO nanowires. RSC Adv 2018; 8:2188-2195. [PMID: 35542572 PMCID: PMC9077248 DOI: 10.1039/c7ra11862g] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2017] [Accepted: 12/30/2017] [Indexed: 11/21/2022] Open
Abstract
Investigations of the transport mechanisms of individual nanowires are important for advancing their use in applications. Based on statistical results for the temperature-dependent electrical characteristics of individual CuO nanowires, and by characterizing them using transmission electron microscopy, we have found that the defect concentration is the most important parameter affecting electron transport in nanowires. Space-charge-limited currents can be observed for sufficiently high applied voltages, for example about 10 V. In the ohmic regime, before the current–voltage curves of nanowires enter the trap-filling stage, three main transport mechanisms have been proposed. They are related to the defect concentrations and include combinations of defect-induced nearest-neighbor hopping, trap activation, and intrinsic excitation. Numerical calculations using the model to fit the experimental data agree very well, confirming the proposed transport mechanisms. Defect concentration is pinpointed to be the main parameter that determine the transportation in CuO nanowire by statistical results.![]()
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38
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Zhang X, Lee H, Kim J, Kim EJ, Park J. Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors. Materials (Basel) 2017; 11:ma11010046. [PMID: 29283408 PMCID: PMC5793544 DOI: 10.3390/ma11010046] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2017] [Revised: 12/28/2017] [Accepted: 12/28/2017] [Indexed: 01/16/2023]
Abstract
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.
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Affiliation(s)
- Xue Zhang
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
| | - Hyeonju Lee
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
| | - Jungwon Kim
- Department of Environmental Sciences & Biotechnology, Hallym University, Chuncheon 24252, Korea.
| | - Eui-Jik Kim
- Department of Convergence Software, Hallym University, Chuncheon 24252, Korea.
| | - Jaehoon Park
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
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39
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Yang X, Gan H, Tian Y, Peng L, Xu N, Chen J, Chen H, Deng S, Liang SD, Liu F. Fast identification of the conduction-type of nanomaterials by field emission technique. Sci Rep 2017; 7:13057. [PMID: 29026102 PMCID: PMC5638822 DOI: 10.1038/s41598-017-12741-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2017] [Accepted: 09/18/2017] [Indexed: 11/09/2022] Open
Abstract
There are more or less dopants or defects existing in nanomaterials, so they usually have different conduct-types even for the same substrate. Therefore, fast identification of the conduction-type of nanomaterials is very essential for their practical application in functional nanodevices. Here we use the field emission (FE) technique to research nanomaterials and establish a generalized Schottky-Nordheim (SN) model, in which an important parameter λ (the image potential factor) is first introduced to describe the effective image potential. By regarding λ as the criterion, their energy-band structure can be identified: (a) λ = 1: metal; (b) 0.5 < λ < 1: n-type semiconductor; (c) 0 < λ < 0.5: p-type semiconductor. Moreover, this method can be utilized to qualitatively evaluate the doping-degree for a given semiconductor. We test numerically and experimentally a group of nanomaterial emitters and all results agree with our theoretical results very well, which suggests that our method based on FE measurements should be an ideal and powerful tool to fast ascertain the conduction-type of nanomaterials.
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Affiliation(s)
- Xun Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Haibo Gan
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Yan Tian
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Luxi Peng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
| | - Shi-Dong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
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40
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Presmanes L, Thimont Y, El Younsi I, Chapelle A, Blanc F, Talhi C, Bonningue C, Barnabé A, Menini P, Tailhades P. Integration of P-CuO Thin Sputtered Layers onto Microsensor Platforms for Gas Sensing. Sensors (Basel) 2017. [PMID: 28621738 PMCID: PMC5492108 DOI: 10.3390/s17061409] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
Abstract
P-type semiconducting copper oxide (CuO) thin films deposited by radio-frequency (RF) sputtering were integrated onto microsensors using classical photolithography technologies. The integration of the 50-nm-thick layer could be successfully carried out using the lift-off process. The microsensors were tested with variable thermal sequences under carbon monoxide (CO), ammonia (NH3), acetaldehyde (C2H4O), and nitrogen dioxide (NO2) which are among the main pollutant gases measured by metal-oxide (MOS) gas sensors for air quality control systems in automotive cabins. Because the microheaters were designed on a membrane, it was then possible to generate very rapid temperature variations (from room temperature to 550 °C in only 50 ms) and a rapid temperature cycling mode could be applied. This measurement mode allowed a significant improvement of the sensor response under 2 and 5 ppm of acetaldehyde.
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Affiliation(s)
- Lionel Presmanes
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Yohann Thimont
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Imane El Younsi
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Audrey Chapelle
- LAAS-CNRS, Université de Toulouse, UPS, INSA, 7 avenue du colonel Roche, F-31031 Toulouse, France.
| | - Frédéric Blanc
- LAAS-CNRS, Université de Toulouse, UPS, INSA, 7 avenue du colonel Roche, F-31031 Toulouse, France.
| | - Chabane Talhi
- LAAS-CNRS, Université de Toulouse, UPS, INSA, 7 avenue du colonel Roche, F-31031 Toulouse, France.
| | - Corine Bonningue
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Antoine Barnabé
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
| | - Philippe Menini
- LAAS-CNRS, Université de Toulouse, UPS, INSA, 7 avenue du colonel Roche, F-31031 Toulouse, France.
| | - Philippe Tailhades
- CIRIMAT, Université de Toulouse, CNRS, INPT, UPS, 118 Route de Narbonne, F-31062 Toulouse CEDEX 9, France.
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41
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Abstract
In this review, we comprehensively summarize the important advances in hollow CuxO micro/nanostructures, including the universal synthesis strategies, the interfacial Cu–O atomic structures as well as the intrinsic properties, and potential applications. Remarks on emerging issues and promising research directions are also discussed.
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Affiliation(s)
- Shaodong Sun
- Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology
- School of Materials Science and Engineering
- Xi'an University of Technology
- Xi'an 710048
- People's Republic of China
| | - Qing Yang
- Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology
- School of Materials Science and Engineering
- Xi'an University of Technology
- Xi'an 710048
- People's Republic of China
| | - Shuhua Liang
- Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology
- School of Materials Science and Engineering
- Xi'an University of Technology
- Xi'an 710048
- People's Republic of China
| | - Zhimao Yang
- School of Science
- State Key Laboratory for Mechanical Behavior of Materials
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter
- Center of Suzhou Nano Science and Technology
- Xi'an Jiaotong University
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42
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Bae Y, Pikhitsa PV, Cho H, Choi M. Multifurcation Assembly of Charged Aerosols and Its Application to 3D Structured Gas Sensors. Adv Mater 2017; 29:1604159. [PMID: 27862366 DOI: 10.1002/adma.201604159] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2016] [Revised: 09/22/2016] [Indexed: 06/06/2023]
Abstract
Multifurcated assemblies composed of charged nanoparticles (NPs) are fabricated by using spark discharge and manipulating the electric field. The multifurcated structure of the assembly of NPs and spontaneous interconnections between the near structures are described. The gas sensor with the tetrafurcated-NP-assembled structure demonstrates ≈200% enhanced response to 100 ppm CO at 300 °C.
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Affiliation(s)
- Yongjun Bae
- Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul, 08826, South Korea
- Global Frontier Center for Multiscale Energy System, Seoul, 08826, South Korea
| | - Peter V Pikhitsa
- Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul, 08826, South Korea
- Global Frontier Center for Multiscale Energy System, Seoul, 08826, South Korea
| | - Hyesung Cho
- Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, PA, 19104, USA
| | - Mansoo Choi
- Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul, 08826, South Korea
- Global Frontier Center for Multiscale Energy System, Seoul, 08826, South Korea
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43
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Um DS, Lee Y, Lim S, Park S, Lee H, Ko H. High-Performance MoS 2/CuO Nanosheet-on-One-Dimensional Heterojunction Photodetectors. ACS Appl Mater Interfaces 2016; 8:33955-33962. [PMID: 27960400 DOI: 10.1021/acsami.6b12574] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
van der Waals heterostructures based on stacked two-dimensional (2D) materials provide novel device structures enabling high-performance electronic and optoelectronic devices. While 2D-2D or 2D-bulk heterostructures have been largely explored for fundamental understanding and novel device applications, 2D-one-dimensional (1D) heterostructures have been rarely studied because of the difficulty in achieving high-quality heterojunctions between 2D and 1D structures. In this study, we introduce nanosheet-on-1D van der Waals heterostructure photodetectors based on a wet-transfer printing of a MoS2 nanosheet on top of a CuO nanowire (NW). MoS2/CuO nanosheet-on-1D photodetectors show an excellent photocurrent rectification ratio with an ideality factor of 1.37, which indicates the formation of an atomically sharp interface and a high-quality heterojunction in the MoS2/CuO heterostructure by wet-transfer-enhanced van der Waals bonding. Furthermore, nanosheet-on-1D heterojunction photodetectors exhibit excellent photodetection capabilities with an ultrahigh photoresponsivity (∼157.6 A/W), a high rectification ratio (∼6000 at ±2 V), a low dark current (∼38 fA at -2 V), and a fast photoresponse time (∼34.6 and 51.9 ms of rise and decay time), which cannot be achievable with 1D-on-nanosheet heterojunction photodetectors. The wet-transfer printing of nanosheet-on-1D heterostructures introduced in this study provides a robust platform for the fundamental study of various combinations of 2D-on-1D heterostructures and their applications in novel heterojunction devices.
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Affiliation(s)
- Doo-Seung Um
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
| | - Youngsu Lee
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
| | - Seongdong Lim
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
| | - Seungyoung Park
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
| | - Hochan Lee
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
| | - Hyunhyub Ko
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology , Ulsan 689-798, Korea
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44
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Lee H, Zhang X, Hwang J, Park J. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors. Materials (Basel) 2016; 9:ma9100851. [PMID: 28773973 PMCID: PMC5456589 DOI: 10.3390/ma9100851] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/08/2016] [Revised: 10/12/2016] [Accepted: 10/13/2016] [Indexed: 01/10/2023]
Abstract
We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.
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Affiliation(s)
- Hyeonju Lee
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
| | - Xue Zhang
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
| | - Jaeeun Hwang
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin 17104, Korea.
| | - Jaehoon Park
- Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
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45
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Abstract
A simple solvothermal microwave irradiation (SMI) route was used first time for the preparation of pure and different concentrations of cobalt (Co) doped CuO nanocrystals. The structure, morphology and composition of the as-synthesized nanocrystals were investigated by X-ray powder diffraction (XRD), Field emission scanning electron microscopy (FESEM) and Energy dispersive X-ray spectral (EDX) analysis. The XRD results confirmed the formation of the single phase monoclinic structure of pure and doped CuO with average crystallite sizes in the range of 10–16[Formula: see text]nm. The surface morphology of the Co doped CuO nanocrystals did not show much change following the increasing concentration of doping. The EDX analysis showed that the atomic percentage of Cu decreases with the increasing dopant (Co) concentrations, which have proved that the Cu atoms have successfully replaced their Co counterparts as dopant. The optical absorption properties were determined by a UV-Vis spectral analysis and the results showed that the as-prepared pure and Co doped CuO nanoparticles have a larger bandgap values in the range of 2.804–3.193[Formula: see text]eV. A strong and sharp photoluminescence (PL) emission at 300[Formula: see text]nm excitation wavelength is reported from the prepared nanoparticles. The results show that the pure and doped CuO nanoparticles have high dispersion and narrow size distribution.
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Affiliation(s)
- V. Ponnarasan
- Department of Physics, CMS College of Engineering, Namakkal, Tamil Nadu 637 003, India
| | - A. Krishnan
- Department of Physics, M.A.M. College of Engineering, Tiruchirappalli, Tamil Nadu 621 105, India
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46
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Miccoli B, Cauda V, Bonanno A, Sanginario A, Bejtka K, Bella F, Fontana M, Demarchi D. One-Dimensional ZnO/Gold Junction for Simultaneous and Versatile Multisensing Measurements. Sci Rep 2016; 6:29763. [PMID: 27405279 PMCID: PMC4942824 DOI: 10.1038/srep29763] [Citation(s) in RCA: 73] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2015] [Accepted: 06/20/2016] [Indexed: 11/09/2022] Open
Abstract
The sensing capabilities of zinc oxide nano/micro-structures have been widely investigated and these structures are frequently used in the fabrication of cutting-edge sensors. However, to date, little attention has been paid to the multi-sensing abilities of this material. In this work, we present an efficient multisensor based on a single zinc oxide microwire/gold junction. The device is able to detect in real time three different stimuli, UV-VIS light, temperature and pH variations. This is thanks to three properties of zinc oxide its photoconductive response, pyroelectricity and surface functionalization with amino-propyl groups, respectively. The three stimuli can be detected either simultaneously or in a sequence/random order. A specific mathematical tool was also developed, together with a design of experiments (DoE), to predict the performances of the sensor. Our micro-device allows reliable and versatile real-time measurements of UV-VIS light, temperature and pH variations. Therefore, it shows great potential for use in the field of sensing for living cell cultures.
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Affiliation(s)
- Beatrice Miccoli
- Department of Electronics and Telecommunication, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy
| | - Valentina Cauda
- Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, Torino 10129, Italy.,Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy
| | - Alberto Bonanno
- Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, Torino 10129, Italy
| | - Alessandro Sanginario
- Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, Torino 10129, Italy
| | - Katarzyna Bejtka
- Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, Torino 10129, Italy
| | - Federico Bella
- Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy
| | - Marco Fontana
- Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy
| | - Danilo Demarchi
- Department of Electronics and Telecommunication, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino 10129, Italy.,Center for Space Human Robotics@PoliTo, Istituto Italiano di Tecnologia, Corso Trento 21, Torino 10129, Italy
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47
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Affiliation(s)
- M. M. Momeni
- Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111, Iran
| | - Z. Nazari
- Department of Physics, Payame Noor University, Iran Nano Structured Coatings Institute, Yazd, Iran
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48
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Steinhauer S, Chapelle A, Menini P, Sowwan M. Local CuO Nanowire Growth on Microhotplates: In Situ Electrical Measurements and Gas Sensing Application. ACS Sens 2016. [DOI: 10.1021/acssensors.6b00042] [Citation(s) in RCA: 61] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Stephan Steinhauer
- Nanoparticles
by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Tancha Onna-Son, Okinawa 904-0495, Japan
| | - Audrey Chapelle
- University of Toulouse, Laboratoire d’Analyses
et d’Architecture des Systèmes CNRS-LAAS, 7 Avenue du Colonel Roche, 31031 Toulouse Cedex 4, France
| | - Philippe Menini
- University of Toulouse, Laboratoire d’Analyses
et d’Architecture des Systèmes CNRS-LAAS, 7 Avenue du Colonel Roche, 31031 Toulouse Cedex 4, France
| | - Mukhles Sowwan
- Nanoparticles
by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Tancha Onna-Son, Okinawa 904-0495, Japan
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49
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Yu X, Marks TJ, Facchetti A. Metal oxides for optoelectronic applications. Nat Mater 2016; 15:383-96. [PMID: 27005918 DOI: 10.1038/nmat4599] [Citation(s) in RCA: 366] [Impact Index Per Article: 45.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2015] [Accepted: 02/15/2016] [Indexed: 05/27/2023]
Abstract
Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
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Affiliation(s)
- Xinge Yu
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Opto-electronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
- Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA
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50
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Juan YM, Chang SJ, Hsueh HT, Wang SH, Cheng TC, Huang SW, Hsueh TJ, Yeh YM, Hsu CL. Electron field emitters made of 3-D CuO nanowires on flexible silicon substrate fabricated by heating Cu rods with through silicon via process. RSC Adv 2016. [DOI: 10.1039/c6ra07781a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023] Open
Abstract
Cu rods with a diameter of 10 μm on a flexible silicon substrate were fabricated using the through silicon via (TSV) process and chemical mechanical polishing (CMP).
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Affiliation(s)
- Y. M. Juan
- Institute of Microelectronics and Department of Electrical Engineering
- National Cheng Kung University
- Tainan 701
- Taiwan
| | - S. J. Chang
- Institute of Microelectronics and Department of Electrical Engineering
- National Cheng Kung University
- Tainan 701
- Taiwan
| | - H. T. Hsueh
- National Nano Device Laboratories
- National Applied Research Laboratories
- Tainan 741
- Taiwan
| | - S. H. Wang
- Institute of Microelectronics and Department of Electrical Engineering
- National Cheng Kung University
- Tainan 701
- Taiwan
| | - T. C. Cheng
- Department of Mechanical Engineering
- National Kaohsiung University of Applied Science
- Kaohsiung 807
- Taiwan
| | - S. W. Huang
- Department of Mechanical Engineering
- National Kaohsiung University of Applied Science
- Kaohsiung 807
- Taiwan
| | - T. J. Hsueh
- National Nano Device Laboratories
- National Applied Research Laboratories
- Tainan 741
- Taiwan
| | - Y. M. Yeh
- National Nano Device Laboratories
- National Applied Research Laboratories
- Tainan 741
- Taiwan
| | - C. L. Hsu
- Department of Electrical Engineering
- National University of Tainan
- Tainan 700
- Taiwan
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