Effect of Low-Temperature Oxygen Plasma Treatment of Titanium Alloy Surface on Tannic Acid Coating Deposition

In this study, the effect of low-temperature oxygen plasma treatment with various powers of a titanium alloy surface on the structural and morphological properties of a substrate and the deposition of a tannic acid coating was investigated. The surface characteristics of the titanium alloy were evaluated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and contact angle measurements. Following this, the tannic acid coatings were deposited on the titanium alloy substrates and the structural and morphological properties of the tannic acid coatings deposited were subject to characterization by XPS, SEM, and spectroscopic ellipsometry (SE) measurements. The results show that the low-temperature oxygen plasma treatment of titanium alloys leads to the formation of titanium dioxides that contain -OH groups on the surface being accompanied by a reduction in carbon, which imparts hydrophilicity to the titanium substrate, and the effect increases with the applied plasma power. The performed titanium alloy substrate modification translates into the quality of the deposited tannic acid coating standing out by higher uniformity of the coating, lower number of defects indicating delamination or incomplete bonding of the coating with the substrate, lower number of cracks, thinner cracks, and higher thickness of the tannic acid coatings compared to the non-treated titanium alloy substrate. A similar effect is observed as the applied plasma power increases.

Optical Properties of Amorphous Carbon Thin Films Fabricated Using a High-Energy-Impulse Magnetron-Sputtering Technique

This paper reports the results of amorphous carbon thin films fabricated by using the gas-impulse-injection magnetron-sputtering method and differing the accelerating voltage (1.0-1.4 kV). The obtained layers were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XRD), and spectroscopic ellipsometry (SE). The analysis of the Raman and XPS spectra point to the significant content of sp3 hybridization in the synthesized materials (above 54-73%). The refractive index of the films is very high-above 2.45 in the infrared spectral range. The band-gap energy (determined using the inversed-logarithmic-derivative method) depends on the discharging voltage and is in the range from 1.58 eV (785 nm) to 2.45 eV (506 nm). Based on the obtained results, we have elaborated a model explaining the a-C layers' formation process.

Impact of Methanol Concentration on Properties of Ultra-Nanocrystalline Diamond Films Grown by Hot-Filament Chemical Vapour Deposition

Diamond is a very interesting material with a wide range of properties, making it highly applicable, for example, in power electronics, chemo- and biosensors, tools' coatings, and heaters. Due to the high demand for this innovative material based on the properties it is already expected to have, it is important to obtain homogeneous diamond layers for specific applications. Doping is often chosen to modify the properties of layers. However, there is an alternative way to achieve this goal and it is shown in this publication. The presented research results reveal that the change in methanol content during the Hot Filament Chemical Vapour Deposition (HF CVD) process is a sufficient factor to tune the properties of deposited layers. This was confirmed by analysing the properties of the obtained layers, which were determined using Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and an atomic force microscope (AFM), and the results were correlated with those of X-ray photoelectron spectroscopy (XPS). The results showed that the increasing of the concentration of methanol resulted in a slight decrease in the sp3 phase content. At the same time, the concentration of the -H, -OH, and =O groups increased with the increasing of the methanol concentration. This affirmed that by changing the content of methanol, it is possible to obtain layers with different properties.

Influence of the Microstructure and Optical Constants on Plasmonic Properties of Copper Nanolayers

Copper layers with thicknesses of 12, 25, and 35 nm were thermally evaporated on silicon substrates (Si(100)) with two different deposition rates 0.5 and 5.0 Å/s. The microstructure of produced coatings was studied using atomic force microscopy (AFM) and powder X-ray diffractometer (XRD). Ellipsometric measurements were used to determine the effective dielectric functions <ε˜> as well as the quality indicators of the localized surface plasmon (LSP) and the surface plasmon polariton (SPP). The composition and purity of the produced films were analysed using X-ray photoelectron spectroscopy (XPS).

The Influence of Annealing on the Optical Properties and Microstructure Recrystallization of the TiO2 Layers Produced by Means of the E-BEAM Technique

Titanium dioxide films, about 200 nm in thickness, were deposited using the e-BEAM technique at room temperature and at 227 °C (500K) and then annealed in UHV conditions (as well as in the presence of oxygen (at 850 °C). The fabricated dielectric films were examined using X-ray powder diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and spectroscopic ellipsometry. The applied experimental techniques allowed us to characterize the phase composition and the phase transformation of the fabricated TiO₂ coatings. The films produced at room temperature are amorphous but after annealing consist of anatase crystallites. The layers fabricated at 227 °C contain both anatase and rutile phases. In this case the anatase crystallites are accumulated near the substrate interface whilst the rutile crystallites were formed closer to the surface of the TiO₂ film. It should be emphasized that these two phases of TiO₂ are distinctly separated from each other.

Microstructure and Optical Properties of Nanostructural Thin Films Fabricated through Oxidation of Au-Sn Intermetallic Compounds

AuSn and AuSn₂ thin films (5 nm) were used as precursors during the formation of semiconducting metal oxide nanostructures on a silicon substrate. The nanoparticles were produced in the processes of annealing and oxidation of gold–tin intermetallic compounds under ultra-high vacuum conditions. The formation process and morphology of a mixture of SnO₂ and Au@SnO_x (the core–shell structure) nanoparticles or Au nanocrystalites were carefully examined by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) combined with energy-dispersive X-ray spectroscopy (EDX). The annealing and oxidation of the thin film of the AuSn intermetallic compound led to the formation of uniformly distributed structures with a size of ∼20–30 nm. All of the synthesized nanoparticles exhibited a strong absorption band at 520–530 nm, which is typical for pure metallic or metal oxide systems.

The Effect of Surface Treatment on Structural Properties of CVD Diamond Layers with Different Grain Sizes Studied by Raman Spectroscopy

Extensive Raman spectroscopy studies combined with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) measurements were performed to investigate structural and chemical changes in diamond layers deposited by chemical vapour deposition (CVD) upon post-growth treatment with hydrogen. The aim of this study is to characterize the changes in micro-structural properties of diamond layers with different grain sizes and different contents of sp2 carbon phase. Hydrogenation or oxidization of diamond layer surface is often performed to modify its properties; however, it can also strongly affect the surface structure. In this study, the impact of hydrogenation on the structure of diamond layer surface and its chemical composition is investigated. Owing to their polycrystalline nature, the structural properties of CVD diamond layers can strongly differ within the same layer. Therefore, in this project, in order to compare the results before and after hydrogen treatment, the diamond layers are subjected to Raman spectroscopy studies in the vicinity of a T-shape marker fabricated on the surface of each diamond layer studied.

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

Noble metal nanolayers on flat substrates are often deposited with the use of semiconductor interlayers, which may strongly interact with the noble metal overlayer. We investigated the crystallinity, atomic concentration profile and optical parameters of ≈35 nm-thick silver and gold layers deposited on glass substrates with 2 nm-thick tellurium or selenium interlayers. Our study, based on X-ray reflectometry (XRR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and ellipsometric measurements, showed that using either of these interlayers introduces strain in nanocrystals of both plasmonic films. This, in turn, influences the migration of Se and Te into the metal layers. Selenium atoms migrate both in the silver and gold nanolayers, while tellurium atoms migrate only in silver. The Te concentration curve clearly suggests that this migration is an effect of the segregation of Te atoms in the silver structure. The differences in crystallinity, as well as the migration process, strongly influence the optical parameters of Ag and Au. In the permittivity of Ag deposited on either Te or Se, additional plasmonic bands originating from grain boundary segregation or diffusion occur, while for the Au layer, such resonances were not pronounced. In the permittivity of both materials, the intensity of the interband transition peaks is strongly altered, possibly due to the nano-alloy formation, but more likely due to the microstrain on metal grains.

Ge wetting layer increases ohmic plasmon losses in Ag film due to segregation

We have investigated the influence of the Ge wetting layer on both ohmic and scattering losses of a surface plasmon-polariton (SPP) wave in Ag film deposited on SiO2 substrate with an e-beam evaporator. Samples were examined by means of atomic force microscopy (AFM), spectroscopic ellipsometry (SE), two-dimensional X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and microscopic four-point probe (M4PP) sheet resistance measurements. Ag films of 100 nm thickness were deposited at 180 and 295 K directly onto the substrates with or without a Ge interlayer. In AFM scans, we confirm the fact that the commonly used Ge adhesion layer smooths the surface of Ag film and therefore reduces scattering losses of the SPP wave on surface roughness. However, our ellipsometric measurements indicate for the first time that segregation of Ge leads to a considerable increase in ohmic losses connected with a boost of the imaginary part of Ag permittivity in the 500-800 nm spectral range. Moreover, the trend develops over time, as confirmed in a series of measurements performed over an interval of three months. XPS analysis confirms the Ge segregation to the Ag free surface and most probably to grain boundaries. M4PP measurements show that the specific resistivity in Ag films evaporated on a Ge interlayer at 295 K is nearly twice as high as in layers deposited directly on a SiO2 substrate. The use of an amorphous Al2O3 overlayer prevents Ge segregation to free surface.