Boosting the Output Performance of the MoS2 Monolayer-Based Piezoelectric Nanogenerator by Artificial Dual Strain Concentration

Piezoelectric nanogenerators (PENGs) with molybdenum disulfide (MoS2) monolayers have been intensively studied owing to their superior mechanical durability and stability. However, the limited output performance resulting from a small active area and low strain levels continues to pose a significant challenge that should be overcome. Herein, we report a novel strategy for the epoch-making output performance of a PENG with a MoS2 monolayer by adopting the additive strain concentration concept. The simulation study indicates that strain in the MoS2 monolayer can be initially augmented by the wavy structure resulting from the prestretched poly(dimethylsiloxane) (PDMS) and is further increased through flexural deformation (i.e., bending). Based on these studies, we have developed concentrated strain-applied PENGs with MoS2 monolayers. The wavy structures effectively applied strain to the MoS2 monolayer and generated a piezoelectric output voltage and current of around 580 mV and 47.5 nA, respectively. Our innovative approach to enhancing the performance of PENGs with MoS2 monolayers through the artificial dual strain concept has led to groundbreaking results, achieving the highest recorded output voltage and current for PENGs based on two-dimensional (2D) materials, which provides unique opportunities for the 2D-based energy harvesting field and structural insight into how to improve the net strain on 2D materials.

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase-Transition-Induced Growth

Wafer-scale growth of transition metal dichalcogenides with precise control over the number of layers, and hence the electronic state is an essential technology for expanding the practical application of 2D materials. Herein, a new growth method, phase-transition-induced growth (PTG), is proposed for the precisely controlled growth of molybdenum disulfide (MoS₂ ) films consisting of one to eleven layers with spatial uniformity on a 2 in. wafer. In this method, an energetically unstable amorphous MoS_x O_y (a-MoS_x O_y ) phase is effectively converted to a thermodynamically stable crystalline MoS₂ film. The number of MoS₂ layers is readily controlled layer-by-layer by controlling the amount of Mo atoms in a-MoS_x O_y , which is also applicable for the growth of heteroatom-inserted MoS₂ . The electronic states of intrinsic and Nb-inserted MoS₂ with one and four layers grown by PTGare are analyzed based on their work functions. The work function of monolayer MoS₂ effectively increases with the substitution of Nb for Mo. As the number of layers increases to four, charge screening becomes weaker, dopant ionization becomes easier, and ultimately the work function increases further. Thus, better electronic state modulation is achieved in a thicker layer, and in this respect, PTG has the advantage of enabling precise control over the film thickness.

Sustainable power generation via hydro-electrochemical effects

Recent efforts towards energy scavenging with eco-friendly methods and abundant water look very promising for powering wearables and distributed electronics. However, the time duration of electricity generation is typically too short, and the current level is not sufficient to meet the required threshold for the proper operation of electronics despite the relatively large voltage. This work newly introduced an electrochemical method in combination with hydro-effects in order to extend the energy scavenging time and boost the current. Our device consists of corroded porous steel electrodes whose corrosion overpotential was lowered when the water concentration was increased and vice versa. Then a potential difference was created between two electrodes, generating electricity via the hydro-electrochemical method up to an open-circuit voltage of 750 mV and a short-circuit current of 90 μA cm^-2. Furthermore, electricity was continuously generated for more than 1500 minutes by slow water diffusion against gravity from the bottom electrode. Lastly, we demonstrated that our hydro-electrochemical power generators successfully operated electronics, showing the feasibility of offering electrical power for sufficiently long time periods in practice.

Mixed Triboelectric and Flexoelectric Charge Transfer at the Nanoscale

The triboelectric effect is a ubiquitous phenomenon in which the surfaces of two materials are easily charged during the contact-separation process. Despite the widespread consequences and applications, the charging mechanisms are not sufficiently understood. Here, the authors report that, in the presence of a strain gradient, the charge transfer is a result of competition between flexoelectricity and triboelectricity, which could enhance charge transfer during triboelectric measurements when the charge transfers of both effects are in the same direction. When they are in the opposite directions, the direction and amount of charge transfer could be modulated by the competition between flexoelectric and triboelectric effects, which leads to a distinctive phenomenon, that is, the charge transfer is reversed with varying forces. The subsequent results on the electrical power output signals from the triboelectrification support the proposed mechanism. Therefore, the present study emphasizes the key role of the flexoelectric effect through experimental approaches, and suggests that both the amount and direction of charge transfer can be modulated by manipulating the mixed triboelectric and flexoelectric effects. This finding may provide important information on the triboelectric effect and can be further extended to serve as a guideline for material selection during a nanopatterned device design.

Antiphase Boundaries as Faceted Metallic Wires in 2D Transition Metal Dichalcogenides

Antiphase boundaries (APBs) in 2D transition metal dichalcogenides have attracted wide interest as 1D metallic wires embedded in a semiconducting matrix, which could be exploited in fully 2D-integrated circuits. Here, the anisotropic morphologies of APBs (i.e., linear and saw-toothed APBs) in the nanoscale are investigated. The experimental and computational results show that despite their anisotropic nanoscale morphologies, all APBs adopt a predominantly chalcogen-oriented dense structure to maintain the energetically most stable atomic configuration. Moreover, the effect of the nanoscale morphology of an APB on electron transport from two-probe field effect transistor measurements is investigated. A saw-toothed APB has a considerably lower electron mobility than a linear APB, indicating that kinks between facets are the main factors of scattering. The observations contribute to the systematical understanding of the faceted APBs and its impact on electrical transport behavior and it could potentially extend the applications of 2D materials through defect engineering to achieve the desired properties.

Investigation on energy bandgap states of amorphous SiZnSnO thin films

The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO) has been investigated by controlling the oxygen partial pressure (O_p). The systematic change in O_p during deposition has been used to control the electrical characteristics and energy bandgap of a-SZTO. As O_p increased, the electrical properties degraded, while the energy bandgap increased systematically. This is mainly due to the change in the oxygen vacancy inside the a-SZTO thin film by controlling O_p. Changes in oxygen vacancies have been observed by using X-ray photoelectron spectroscopy (XPS) and investigated by analyzing the variation in density of states (DOS) inside the energy bandgaps. In addition, energy bandgap parameters, such as valence band level, Fermi level, and energy bandgap, were extracted by using ultraviolet photoelectron spectroscopy, Kelvin probe force microscopy, and high-resolution electron energy loss spectroscopy. As a result, it was confirmed that the difference between the conduction band minimum and the Fermi level in the energy bandgap increased systematically as O_p increases. This shows good agreement with the measured results of XPS and DOS analyses.

Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

The change of electrical performance of amorphous SiZnSnO thin film transistors (a-SZTO TFTs) has been investigated depending on various metal capping layers on the channel layer by causing different contact property. It was confirmed that the change of electrical characteristics was sensitively dependent on the change of the capping layer materials on the same channel layer between the source/drain electrodes. This sensitive change in the electrical characteristics is mainly due to different work function of metal capping layer on the channel layer. The work function of each capping layer material has been analyzed and derived by using Kelvin probe force microscopy and compared with the energy bandgap of the SZTO layer. When the work function of the capping layer is larger than that of the channel layer, electrons are depleted from the channel layer to the capping layer. On the contrary, in the case of using a material having a work function smaller than that of the channel layer, the electrical characteristics were improved because electrons were injected into the channel layer. Based on depletion and injection mechanism caused by different contact barrier between metal capping layer and channel layer, NOT, NAND, and NOR logic circuits have been implemented simply by changing metal capping layer on the channel layer.

A Surface-Functionalized Ionovoltaic Device for Probing Ion-Specific Adsorption at the Solid-Liquid Interface

Aqueous ion-solid interfacial interactions at an electric double layer (EDL) are studied in various research fields. However, details of the interactions at the EDL are still not fully understood due to complexity induced from the specific conditions of the solid and liquid parts. Several technical tools for ion-solid interfacial probing are experimentally and practically proposed, but they still show limitations in applicability due to the complicated measurements. Recently, an energy conversion device based on ion dynamics (called ionovoltaic device) was also introduced as another monitoring tool for the EDL, showing applicability as a novel probing method for interfacial interactions. Herein, a monitoring technique for specific ion adsorption (Cu²⁺ and Pb²⁺ in the range of 5 × 10^-6 -1000 × 10^-6 m) in the solid-liquid interface based on the ionovoltaic device is newly demonstrated. The specific ion adsorption and the corresponding interfacial potentials profiles are also investigated to elucidate a working mechanism of the device. The results give the insight of molecular-level ion adsorption through macroscopic water-motion-induced electricity generation. The simple and cost-effective detection of the device provides an innovative route for monitoring specific adsorption and expandability as a monitoring tool for various solid-liquid interfacial phenomena that are unrevealed.

Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N2, H2/N2, and O2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS2 thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.

Mie Resonance-Modulated Spatial Distributions of Photogenerated Carriers in Poly(3-hexylthiophene-2,5-diyl)/Silicon Nanopillars

Organic/silicon hybrid solar cells have great potential as low-cost, high-efficiency photovoltaic devices. The superior light trapping capability, mediated by the optical resonances, of the organic/silicon hybrid nanostructure-based cells enhances their optical performance. In this work, we fabricated Si nanopillar (NP) arrays coated with organic semiconductor, poly(3-hexylthiophene-2,5-diyl), layers. Experimental and calculated optical properties of the samples showed that Mie-resonance strongly concentrated incoming light in the NPs. Spatial mapping of surface photovoltage, i.e., changes in the surface potential under illumination, using Kelvin probe force microscopy enabled us to visualize the local behavior of the photogenerated carriers in our samples. Under red light, surface photovoltage was much larger (63 meV) on the top surface of a NP than on a planar sample (13 meV), which demonstrated that the confined light in the NPs produced numerous carriers within the NPs. Since the silicon NPs provide pathways for efficient carrier transportation, high collection probability of the photogenerated carriers near the NPs can be expected. This suggests that the optical resonance in organic/silicon hybrid nanostructures benefits not only broad-band light trapping but also efficient carrier collection.

Gender Differences in Sexual Behavior and Condom-related Behaviours and Attitudes among Korean Youths

We examined gender differences in sexual behaviours, condom-related behaviours and attitudes to premarital sex in order to identify gender differences in young Korean singles aged 19 to 30 years. This study was based on data from the 2003 national survey of attitudes and behaviours towards AIDS in the Korean adult population, which contains information on a national sample of the general population aged 19 to 59 years. We selected 501 unmarried subjects between the ages of 19-30 from 1,995 respondents. The selection criterion for the subjects' age was based on the 2003 Korean mean age for marriage which was 29.8 for men and 27.0 for women. Gender differentials in sexual behaviour, condom use and related attitudes toward condom use were assessed. Although men initiated sexual practice earlier and had more multiple partners than women, both genders were equally likely to have engaged in inconsistent condom use, even when having sex with a high risk partner. These findings suggest that sex education focusing on condom use should be included in the school curricula. Implementation of early sexual education should start before the students initiate sexual activity to give them a chance to prepare gradu ally. Asia Pac J Public Health 2007; 19(2): 45-52.

Photoheat-induced Schottky nanojunction and indirect Mott transition in VO₂: photocurrent analysis

In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d(1)), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d(1)) for the Mott insulator is screened (trapped) by the indirect band (impurities).

Selective photochemical synthesis of Ag nanoparticles on position-controlled ZnO nanorods for the enhancement of yellow-green light emission

A novel technique for the selective photochemical synthesis of silver (Ag) nanoparticles (NPs) on ZnO nanorod arrays is established by combining ultraviolet-assisted nanoimprint lithography (UV-NIL) for the definition of growth sites, hydrothermal reaction for the position-controlled growth of ZnO nanorods, and photochemical reduction for the decoration of Ag NPs on the ZnO nanorods. During photochemical reduction, the size distribution and loading of Ag NPs on ZnO nanorods can be tuned by varying the UV-irradiation time. The photochemical reduction is hypothesized to facilitate the adsorbed citrate ions on the surface of ZnO, allowing Ag ions to preferentially form Ag NPs on ZnO nanorods. The ratio of visible emission to ultraviolet (UV) emission for the Ag NP-decorated ZnO nanorod arrays, synthesized for 30 min, is 20.5 times that for the ZnO nanorod arrays without Ag NPs. The enhancement of the visible emission is believed to associate with the surface plasmon (SP) effect of Ag NPs. The Ag NP-decorated ZnO nanorod arrays show significant SP-induced enhancement of yellow-green light emission, which could be useful in optoelectronic applications. The technique developed here requires low processing temperatures (120 °C and lower) and no high-vacuum deposition tools, suitable for applications such as flexible electronics.

Novel architecture of plasmon excitation based on self-assembled nanoparticle arrays for photovoltaics

An efficient approach to producing hexagonally self-assembled and well-dispersed gold (Au) nanoparticles (NPs) in the pores of porous anodic aluminum oxide (AAO) is reported. This approach is particularly useful for tuning the surface plasmon resonance frequency of Au NPs by varying the effective dielectric constant of AAO. A strongly enhanced Raman spectrum of dye molecule rhodamine 6G using these well-dispersed Au NPs revealed that such a self-assembled Au NP array can induce a strong plasmonic field. Furthermore, we demonstrated a new architecture of plasmon excitation in a bulk heterojunction (BHJ) inverted organic solar cell (IOSC) using the Au NP array with AAO. The optical response of an active layer poly(3-hexylthiophene):(6,6)-phenyl-C61-butyric acid methyl ester was enhanced by this strong plasmonic field associated a well-dispersed Au NP array. A comparative study of AAO with and without Au NPs confirmed plasmonic improvement of the BHJ IOSC. Simulation results showed that Au NPs concentrate the incoming light into a strongly localized field and enhance light absorption in a wide wavelength range.

Three-dimensional structure of the synaptic contact of the neuromuscular junction in the rat lumbrical muscle

This study examined the three-dimensional structures of the synaptic contact in rat lumbrical muscles by scanning electron microscopy using three different methods: the aldehyde prefix-osmium-dimethyl sulfoxide-osmium method (A-O-D-O method), the cell-extraction method, and the NaOH-digestion method. These three methods visualized the motor nerve endings, subneural basal lamina and postsynaptic sarcolemma, respectively. The motor nerve endings were composed of a cluster of spherical and cylindrical terminals. Pores on the presynaptic membrane were considered openings of exocytotic vesicles. The postsynaptic side of the subneural basal lamina showed numerous ridges, corresponding to junctional folds. Most of the ridges rose vertically from their base. The ridges showed widening, narrowing, and branching. The subneural basal lamina appeared to be composed of small granular substances. The basal lamina of the primary synaptic clefts had pores 25-30 nm in diameter, which may facilitate the transport of acetylcholine (ACh) without being hydrolyzed by ACh esterase in the lamina. On the outer surface of the postsynaptic sarcolemma in a sole plate, the primary synaptic clefts were composed of a mixture of depressions and gutters; so far as we know, this represents the only example of such a phenomenon. These depressions and gutters seem to fit respectively into the spherical and cylindrical terminals of the motor nerve endings. The openings of the junctional folds consisted of a mixture of many slits and a few pits in the primary synaptic clefts.

Scanning electron microscopic observation on the equatorial region of the rat intrafusal muscle fibres, especially on the subsarcolemmal sarcoplasmic reticulum

We examined intracellular structures in the equatorial region of the muscle spindles of rat soleus muscles by scanning electron microscopy, paying particular attention to the ultrastructure of the sarcoplasmic reticulum (SR) beneath the sarcolemma. The subsarcolemmal SR was more developed in nuclear chain fibres than in nuclear bag fibres as was reported in the sleeve and extracapsular regions. In addition, the subsarcolemmal SR of the chain fibre formed a fenestrated sheet, whereas that of the bag fibre organized a layer of fenestrated bands beneath the sarcolemma where the sensory nerve endings are associated. No T-tubules were discerned in the subsarcolemmal SR of both fibres, which may be concerned with the little contraction of the equatorial region.

Sequence analysis of the 3'-terminal half of RNA 1 of wheat spindle streak mosaic virus

cDNA complementary to the 3'-terminal half of RNA 1 of wheat spindle streak mosaic virus (WSSMV) from Southern France has been cloned and sequenced. One large open reading frame (ORF) of 4410 nucleotides and a nontranslated region (NTR) of 213 nucleotides at the 3'-end excluding the poly(A)-tail were found. Because of the amino acid sequence homology to the polyprotein of barley yellow mosaic virus (BaYMV) RNA 1, the encoded polyprotein of the sequenced region of WSSMV is supposed to comprise the C-terminal part of the putative cytoplasmic inclusion (CI) protein, the nuclear inclusion a (NIa) proteinase, the (NIb) RNA-polymerase and the capsid protein. The first 19 N-terminal amino acids of the capsid protein were determined by direct sequencing of proteins of purified WSSMV particles and confirmed this hypothesis. The deduced capsid protein has 294 amino acids and shows 74% identity with the BaYMV capsid protein sequence. This high sequence homology with BaYMV, in addition to the significant identities with barley mild mosaic virus (BaMMV, 35%) and its marginal homology to capsid protein sequences of aphid and mite-borne potyviruses (22-24%), supports the classification of WSSMV as a distinct member of the genus Baymovirus, family Potyviridae.

Molecular analysis of the capsid protein gene of a german isolate of barley mild mosaic virus

Barley mild mosaic virus (BaMMV) is one of the agents causing the barley yellow mosaic disease. The sequence corresponding to the 3'end of the BaMMV RNA1 of a German isolate was sequenced and the coding sequence for the 251 amino acid containing capsid protein was determined. Comparison of this sequence to other potyviral sequences and to the corresponding sequence of two Japanese isolates of BaMMV was done. The three different isolates of BaMMV show a high degree of similarity.