h/e Superconducting Quantum Interference through Trivial Edge States in InAs

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on nontopological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable h/e SQUID signal is observed that, as we find, stems from crossed Andreev states.

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

We report on strain-induced structural defect formation in core Si nanowires of a Si/Ge core/shell nanowire heterostructure and the influence of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in the Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only the Ge shell region or in both the Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relaxation of the misfit strain in the [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of crossover of defect formation is of great importance for understanding heteroepitaxy in radial heterostructures at the nanoscale and for building three dimensional heterostructures for the various applications. Furthermore, the effect of the defect formation on the nanomaterial's functionality is investigated using electrochemical performance tests. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

Giant Spin-Orbit Splitting in Inverted InAs/GaSb Double Quantum Wells

Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electronlike and holelike states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in e^{2}/h steps and a nontrivial Berry phase.

Quantized Conductance and Large g-Factor Anisotropy in InSb Quantum Point Contacts

Because of a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g₁| = 26) and out-of-plane (|g₁| = 52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2  kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires

Knowledge of nanoscale heteroepitaxy is continually evolving as advances in material synthesis reveal new mechanisms that have not been theoretically predicted and are different than what is known about planar structures. In addition to a wide range of potential applications, core/shell nanowire structures offer a useful template to investigate heteroepitaxy at the atomistic scale. We show that the growth of a Ge shell on a Si core can be tuned from the theoretically predicted island growth mode to a conformal, crystalline, and smooth shell by careful adjustment of growth parameters in a narrow growth window that has not been explored before. In the latter growth mode, Ge adatoms preferentially nucleate islands on the {113} facets of the Si core, which outgrow over the {220} facets. Islands on the low-energy {111} facets appear to have a nucleation delay compared to the {113} islands; however, they eventually coalesce to form a crystalline conformal shell. Synthesis of epitaxial and conformal Si/Ge/Si core/multishell structures enables us to fabricate unique cylindrical ring nanowire field-effect transistors, which we demonstrate to have steeper on/off characteristics than conventional core/shell nanowire transistors.

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators

High-performance photovoltaic (PV) devices require strong light absorption, low reflection and efficient photogenerated carrier collection for high quantum efficiency. Previous optical studies of vertical wires arrays have revealed that extremely efficient light absorption in the visible wavelengths is achievable. Photovoltaic studies have further advanced the wire approach by employing radial p-n junction architectures to achieve more efficient carrier collection. While radial p-n junction formation and optimized light absorption have independently been considered, PV efficiencies have further opportunities for enhancement by exploiting the radial p-n junction fabrication procedures to form arrays that simultaneously enhance both light absorption and carrier collection efficiency. Here we report a concept of morphology control to improve PV performance, light absorption and quantum efficiency of silicon radial p-i-n junction arrays. Surface energy minimization during vapor phase epitaxy is exploited to form match-head structures at the tips of the wires. The match-head structure acts as a built-in light concentrator and enhances optical absorptance and external quantum efficiencies by 30 to 40%, and PV efficiency under AM 1.5G illumination by 20% compared to cylindrical structures without match-heads. The design rules for these improvements with match-head arrays are systematically studied. This approach of process-enhanced control of three-dimensional Si morphologies provides a fab-compatible way to enhance the PV performance of Si radial p-n junction wire arrays.

Advances in mid-infrared detection and imaging: a key issues review

It has been over 200 years since people recognized the presence of infrared radiation, and developed methods to capture this signal. However, current material systems and technologies for infrared detections have not met the increasing demand for high performance infrared detectors/cameras, with each system having intrinsic drawbacks. Type-II InAs/GaSb superlattice has been recently considered as a promising candidate for the next generation of infrared detection and imaging. Type-II superlattice is a man-made crystal structure, consisting of multiple quantum wells placed next to each other in a controlled way such that adjacent quantum wells can interact. The interaction between multiple quantum wells offers an additional degree of freedom in tailoring the material's properties. Another advantage of type-II superlattice is the experimental benefit of inheriting previous research on material synthesis and device fabrication of bulk semiconductors. It is the combination of these two unique strengths of type-II superlattice--novel physics and easy manipulation--that has enabled unprecedented progress in recent years. In this review, we will describe historical development, and current status of type-II InAs/GaSb superlattice for advanced detection and imaging in the mid-infrared regime (λ = 3-5 µm).

Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors

Heterostructure engineering capability, especially in the radial direction, is a unique property of bottom-up nanowires (NWs) that makes them a serious candidate for high-performance field-effect transistors (FETs). In this Letter, we present a comprehensive study on size dependent carrier transport behaviors in vapor-liquid-solid grown Ge/Si core/shell NWFETs. Transconductance, subthreshold swing, and threshold voltage exhibit a linear increase with the NW diameter due to the increase of the transistor body size. Carrier confinement in this core/shell architecture is shown to maintain a diameter-independent hole mobility as opposed to surface-induced mobility degradation in homogeneous Ge NWs. The Si shell thickness also exhibits a slight effect on the hole mobility, while the most abrupt mobility transition is between structures with and without the Si shell. A hole mobility of 200 cm(2)/(V · s) is extracted from transistor performance for core/shell NWs with a diameter range of 15-50 nm and a 3 nm Si shell. The constant mobility enables a complete and unambiguous dependence of FET performance on NW diameter to be established and provides a caliper for performance comparisons between NWFETs and with other FET families.

Tailoring lithiation behavior by interface and bandgap engineering at the nanoscale

Controlling the transport of lithium (Li) ions and their reaction with electrodes is central in the design of Li-ion batteries for achieving high capacity, high rate, and long lifetime. The flexibility in composition and structure enabled by tailoring electrodes at the nanoscale could drastically change the ionic transport and help meet new levels of Li-ion battery performance. Here, we demonstrate that radial heterostructuring can completely suppress the commonly observed surface insertion of Li ions in all reported nanoscale systems to date and to exclusively induce axial lithiation along the [111] direction in a layer-by-layer fashion. The new lithiation behavior is achieved through the deposition of a conformal, epitaxial, and ultrathin silicon (Si) shell on germanium (Ge) nanowires, which creates an effective chemical potential barrier for Li ion diffusion through and reaction at the nanowire surface, allowing only axial lithiation and volume expansion. These results demonstrate for the first time that interface and bandgap engineering of electrochemical reactions can be utilized to control the nanoscale ionic transport/insertion paths and thus may be a new tool to define the electrochemical reactions in Li-ion batteries.

Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance

We report a high performance long-wavelength IR dual-band imager based on type-II superlattices with 100% cutoff wavelengths at 9.5 μm (blue channel) and 13 μm (red channel). Test pixels reveal background-limited behavior with specific detectivities as high as ~5×10¹¹ Jones at 7.9 μm in the blue channel and ~1×10¹¹ Jones at 10.2 μm in the red channel at 77 K. These performances were attributed to low dark currents thanks to the M-barrier and Fabry-Perot enhanced quantum efficiencies despite using thin 2 μm absorbing regions. In the imager, the high signal-to-noise ratio contributed to median noise equivalent temperature differences of ~20 milli-Kelvin for both channels with integration times on the order of 0.5 ms, making it suitable for high speed applications.

Risk factors associated with typhoid fever in Son La province, northern Vietnam

Between July and December 2002, we undertook a hospital-based case-control study to identify risk factors associated with typhoid fever in Son La province, northern Vietnam. Among 617 suspected cases, 90 cases of typhoid fever were confirmed by blood or stool culture. One hundred and eighty controls (neighbours of typhoid cases matched for gender and age) were chosen. Participants were interviewed at home using a standardized questionnaire. Seventy-five per cent of cases were aged 10-44 years. No cases in patients aged less than 5 years were recorded in this study. In a conditional logistic regression analysis recent contact with a typhoid patient (OR = 3.3, 95% CI 1.7-6.2, P < 0.001), no education (OR = 2.0, 95% CI 1.0-3.7, P = 0.03) and drinking untreated water (OR = 3.9, 95% CI 2.0-7.5, P < 0.001) were independently associated with typhoid fever. Improving quality of drinking water must be a priority and health education strategies targeted at individuals with no schooling, and contacts of patients, would be expected to decrease the burden of typhoid fever.

Drug susceptibility and its genetic basis in epidemic Vibrio cholerae O1 in Vietnam

The drug susceptibility and genes responsible for the drug resistance of Vibrio cholerae O1 isolated in Vietnam in 1995, 2000 and 2002 were studied. The strains isolated in 1995 were resistant to streptomycin and harboured the class I integron which contained the aadA1 gene responsible for streptomycin resistance. The strains isolated in 2000 were devoid of a class I integron but were multiple-drug resistant and harboured SXT constin, with several drug-resistant genes. The genes responsible for streptomycin resistance were strA and strB. The strains isolated in 2002 were sensitive to all drugs examined, and the organisms were devoid of both class I integron and SXT constin. Cholera outbreaks in the three periods examined (1995, 2000 and 2002) were apparently due to different categories of V. cholerae O1.

Age-related prevalence of Shigella and Salmonella antibodies and their association with diarrhoeal diseases in Peruvian children

Shigella and Salmonella antibodies in relation to diarrhoea were studied in a cohort of 413 children between 2 and 27 months of age in peri-urban Lima, Peru. Blood samples were obtained at 2, 3 and 12 months of age. Antibody titres against lipopolysaccharide from Shigella flexneri serotype Y, Shigella dysenteriae serotype 1, Shigella sonnei, Salmonella serogroups AO, BO, DO, and Shigella Ipa and Salmonella typhi Vi antigens were measured by enzyme immunoassay. IgG titres against S. flexneri and Shigella Ipa were higher at 2 than at 3 or 12 months of age (p=0.001), while the changes in IgG titres against S. dysenteriae, S. sonnei and Salmonella were not pronounced. IgA and IgM titres against S. flexneri, Shigella Ipa, S. dysenteriae, S. sonnei and Salmonella were significantly higher at 12 than at 2 or 3 months of age (p=0.001). Stool samples were obtained from children in 64% of all diarrhoeal episodes. Shigella spp. were isolated from 20% of the children during the first 2 y of life and Salmonella in 3%. Most isolates were from children at 13-24 months of age (78%). IgG antibodies at 12 months of age did not protect against shigellosis during the second year of life.

Safety and immunogenicity study of the auxotrophic Shigella flexneri 2a vaccine SFL1070 with a deleted aroD gene in adult Swedish volunteers

The live auxotrophic Shigella flexneri 2a vaccine strain SFL1070 with a deleted aroD gene was given orally to 37 adult Swedish volunteers who received three doses within 5 days. Each dose comprised 1 x 10(5) (n = 9), 1 x 10(7) (n = 10), 1 x 10(8) (n = 9) or 1 x 10(9) (n = 9) c.f.u. S. flexneri SFL1070. One volunteer vaccinated with 1 x 10(7) and three vaccinated with 1 x 10(8) c.f.u. reported mild gastrointestinal symptoms after the first dose. Vaccination with 1 x 10(9) c.f.u. caused abdominal pain and watery diarrhoea in four volunteers who all recovered spontaneously within 72 h. S. flexneri SFL1070 was not recovered from volunteers given 1 x 10(5) c.f.u., but was shed in faeces by six volunteers vaccinated with 1 x 10(7), by all nine vaccinated with 1 x 10(8), and by seven volunteers vaccinated with 1 x 10(9) c.f.u. The mean excretion time was 2.6 (range 0-4) days in the 1 x 10(8) and the 1 x 10(9) groups. Serum antibody responses against either S. flexneri 2a and Y lipopolysaccharides (LPSs) or Shigella invasion plasmid antigens (Ipa) were seen in eight volunteers vaccinated with 1 x 10(9) (p < 0.01 to p < 0.05 for mean relative titres of IgA and IgG against S. flexneri 2a and Y LPSs), in four vaccinated with 1 x 10(8), and in two and one volunteers each vaccinated with 1 x 10(7) and 1 x 10(5) c.f.u. of S. flexneri SFL1070. Intestinal sIgA responses to the same antigens were elicited in all volunteers in the 1 x 10(9) and the 1 x 10(8) groups, and in six and one volunteers vaccinated with 1 x 10(7) and 1 x 10(5) c.f.u., respectively. The sIgA responses against S. flexneri 2a and Y LPSs were significant in all but the 1 x 10(5) group (p < 0.01 to p < 0.05). Significant antibody-secreting cell (ASC) responses specific to S. flexneri 2a LPS were seen in peripheral blood from eight volunteers each in the 1 x 10(9) and 1 x 10(8) groups and from five volunteers vaccinated with 1 x 10(7) c.f.u. (p < 0.01 to p < 0.05). The number of volunteers showing anti-Shigella Ipa ASC responses in these groups were five (p < 0.01 to p < 0.05), three and one, respectively.(ABSTRACT TRUNCATED AT 400 WORDS)

Penetration of cefamandole, cephalothin, and desacetylcephalothin into fibrin clots

The conversion of cephalothin into a less active metabolite (desacetylcephalothin) might influence its distribution in tissues. An experimental rabbit model devised to determine concentrations of antibiotics in subcutaneous fibrin clots was used in this study. Groups of five to six animals received 100-mg/kg intravenous injections of either cefamandole or cephalothin. One hour after the injection, the concentration of cefamandole in serum was 20 times higher than that of cephalothin. Whereas cephalothin was undetectable at 4 h, cefamandole was still detectable at the end of the experiment. The half-lives of cephalothin and cefamandole in serum were 16 and 27 min, respectively. The concentration of cefamandole found in fibrin clots was severalfold higher than that of cephalothin. The half-life of cefamandole in clots (81 min) was superior to that of cephalothin (38 min). Although concentrations of both antibiotics were higher in serum than in clots at 1 h, the concentrations of these drugs in the clots persisted at higher levels throughout the next 5 h of the experiment. The extent of binding of cefamandole (87%) to rabbit serum was greater than that of cephalothin (50%). At least 55% of cephalothin was metabolized in vivo into its less active metabolite desacetylcephalothin. This metabolite was found in higher proportion in the serum (75%) than in the clots (55%). Whereas only 12% of the free (unbound) cephalothin reached the clots, 78% of the free cefamandole was found in the clots. This lower level of penetration of unbound cephalothin might be explained by the short half-life of this antibiotic, not permitting equilibrium to occur.