Preface to Special Issue on Sustainable Ammonia Synthesis

In this Editorial, Guest Editors Douglas R. MacFarlane, Egill Skúlason, Hideo Hosono and Minhua Shao discuss the newly emerging field of electrochemical nitrogen reduction reaction (NRR) in the Special Issue of ChemSusChem on Sustainable Ammonia Synthesis.

Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway

Amorphous oxide semiconductors (AOSs) with low off-currents and processing temperatures offer promising alternative materials for next-generation high-density memory devices. The complex vertical stacking process of memory devices significantly increases the probability of encountering internal contact issues. Conventional surface treatment methods developed for planar devices necessitate efficient approaches to eliminate contact issues at deep internal interfaces in the nanoscale complex structures of AOS devices. In this work, we report the pioneering use of palladium thin film as a high-efficiency active hydrogen transfer pathway from the outside to the internal contact interface via low-temperature postannealing in the H2 atmosphere, and the formation of highly conductive metallic interlayer effectively solves the contact issues at the deeply buried interfaces in devices. The application of this method reduced the contact resistance of Pd electrodes/amorphous indium-gallium-zinc oxide (a-IGZO) thin-film by 2 orders of magnitude, and thereby the mobility of thin-film transistor was increased from 3.2 cm2 V-1 s-1 to nearly 20 cm2 V-1 s-1, preserving an excellent bias stress stability. This technology has wide applicability for the solution of contact resistance issues in oxide semiconductor devices with complex architectures.

Polaronic Nonlinear Optical Response and All-Optical Switching Based on an Ionic Metal Oxide

It has been well-established that light-matter interactions, as manifested by diverse linear and nonlinear optical (NLO) processes, are mediated by real and virtual particles, such as electrons, phonons, and excitons. Polarons, often regarded as electrons dressed by phonons, are known to contribute to exotic behaviors of solids, from superconductivity to photocatalysis, while their role in materials' NLO response remains largely unexplored. Here, the NLO response mediated by polarons supported by a model ionic metal oxide, TiO2, is examined. It is observed that the formation of polaronic states within the bandgap results in a dramatic enhancement of NLO absorption coefficient by over 130 times for photon energies in the sub-bandgap regions, characterized by a 100 fs scale ultrafast response that is typical for thermalized electrons in metals. The ultrafast polaronic NLO response is then exploited for the development of all-optical switches for ultrafast pulse generation in near-infrared (NIR) fiber lasers and modulation of optical signal in the telecommunication band based on evanescent interaction on a planar waveguide chip. These results suggest that the polarons supported by dielectric ionic oxides can fill the gaps left by dielectric and metallic materials and serve as a novel platform for nonlinear photonic applications.

Dipole Coupling Accelerated H2 O Dissociation by Magnesium-Based Intermetallic Catalysts

The water (H2 O) dissociation is critical for various H2 O-associated reactions, including water gas shift, hydrogen evolution reaction and hydrolysis corrosion. While the d-band center concept offers a catalyst design guideline for H2 O activation, it cannot be applied to intermetallic or main group elements-based systems because Coulomb interaction was not considered. Herein, using hydrolysis corrosion of Mg as an example, we illustrate the critical role of the dipole of the intermetallic catalysts for H2 O dissociation. The H2 O dissociation kinetics can be enhanced using Mgx Mey (Me=Co, Ni, Cu, Si and Al) as catalysts, and the hydrogen generation rate of Mg2 Ni-loaded Mg reached 80 times as high as Ni-loaded Mg. The adsorbed H2 O molecules strongly couple with the Mg-Me dipole of Mgx Mey , lowering the H2 O dissociation barrier. The dipole-based H2 O dissociation mechanism is applicable to non-transition metal-based systems, such as Mg2 Si and Mg17 Al12 , offering a flexible catalyst design strategy for controllable H2 O dissociation.

Inverse-Perovskite Ba3 BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity

High energy-conversion efficiency (ZT) of thermoelectric materials has been achieved in heavy metal chalcogenides, but the use of toxic Pb or Te is an obstacle for wide applications of thermoelectricity. Here, high ZT is demonstrated in toxic-element free Ba3 BO (B = Si and Ge) with inverse-perovskite structure. The negatively charged B ion contributes to hole transport with long carrier life time, and their highly dispersive bands with multiple valley degeneracy realize both high p-type electronic conductivity and high Seebeck coefficient, resulting in high power factor (PF). In addition, extremely low lattice thermal conductivities (κlat ) 1.0-0.4 W m-1  K-1 at T = 300-600 K are observed in Ba3 BO. Highly distorted O-Ba6 octahedral framework with weak ionic bonds between Ba with large mass and O provides low phonon velocities and strong phonon scattering in Ba3 BO. As a consequence of high PF and low κlat , Ba3 SiO (Ba3 GeO) exhibits rather high ZT = 0.16-0.84 (0.35-0.65) at T = 300-623 K (300-523 K). Finally, based on first-principles carrier and phonon transport calculations, maximum ZT is predicted to be 2.14 for Ba3 SiO and 1.21 for Ba3 GeO at T = 600 K by optimizing hole concentration. Present results propose that inverse-perovskites would be a new platform of environmentally-benign high-ZT thermoelectric materials.

BaTiO3-xNy: Highly Basic Oxide Catalyst Exhibiting Coupling of Electrons at Oxygen Vacancies with Substituted Nitride Ions

The base strength of oxide catalysts is controlled by the electron charge distribution between cations and anions, with unsaturated oxygen ions that have lone pair electrons typically acting as basic sites. Substitution of oxide ions with anions that have different valences, such as nitride and hydride ions, can often generate basic sites. It is plausible that electrons trapped at oxygen vacancy sites could provide increased electron density and shift the highest occupied molecular orbital energy levels of anions upward in the case that the oxygen vacancies couple with surface-substituted anions. The present work demonstrates that high catalytic basicity can be obtained via site-selective doping of anions at face-sharing Ti2O9 dimer sites with oxygen vacancies in BaTiO3-x. This improved basicity stems from the coupling of substituted nitride ions to electrons at oxygen vacancies. The oxynitride BaTiO3-xNy was found to contain nitride ions that have increased electronic charge density on the basis of such interactions. Enhanced surface basicity following doping with nitride ion was also confirmed by CO2 temperature-programmed desorption and infrared spectroscopy in conjunction with the adsorption of CHCl3. The strong Lewis base sites resulting from the formation of the oxynitride evidently facilitated the catalytic activation of C-H bonds to promote Knoevenagel condensation reactions between aldehydes and active methylene compounds with pKa values of up to 28.9.

Ammonia Synthesis over Fe-Supported Catalysts Mediated by Face-Sharing Nitrogen Sites in BaTiO3-x Ny Oxynitride

Invited for this Issue's cover is the group of Professor Hideo Hosono at Tokyo Institute of Technology. The Cover image explores the question which activation dominates N2 activation for ammonia synthesis. The Research Article itself is available at 10.1002/cssc.202300551.

Ammonia Synthesis over Fe-Supported Catalysts Mediated by Face-Sharing Nitrogen Sites in BaTiO3-x Ny Oxynitride

Nitride and hydride materials have been proposed as active supports for the loading of transition metal catalysts in thermal catalytic ammonia synthesis. However, the contribution of nitrogen or hydride anions in the support to the catalytic activity for supported transition-metal catalysts is not well understood, especially for Fe-based catalysts. Here, we report that hexagonal-BaTiO3-x Ny with nitrogen vacancies at face-sharing sites acts as a more efficient support for Fe catalysts for ammonia synthesis than BaTiO3 or BaTiO3-x Hx at 260 °C to 400 °C. Isotopic experiments, in situ measurements, and a small inverse isotopic effect in ammonia synthesis have revealed that nitrogen molecules are activated at nitrogen vacancies formed at the interface between Fe nanoparticles and the support. Nitrogen vacancies on BaTiO3-x Ny can promote the activity of Fe and Ni catalysts, while electron donation and suppression of hydrogen poisoning by BaTiO3-x Hx are significant in the Ru and Co systems.

Ammonia Synthesis on Ternary LaSi-based Electrides: Tuning the Catalytic Mechanism by the Third Metal

Intermetallic electrides have recently drawn considerable attention due to their unique electronic structure and high catalytic performance for the activation of inert chemical bonds under mild conditions. However, the relationship between electride (anionic) electron abundance and catalytic performance is undefined; the key deciding factor for the performance of intermetallic electride catalysts remains to be addressed. Here, the secret behind electride catalysts La-TM-Si (TM=Co, Fe and Mn) with the same crystal structure but different anionic electrons was studied. Unexpectedly, LaCoSi with the least anionic electrons showed the best catalytic activity. The experiments and first-principles calculations showed that the electride anions promote the N2 dissociation which alters the rate-determining step (RDS) for ammonia synthesis on the studied electrides. Different reaction mechanisms were found for La-TM-Si (TM=Fe, Co) and LaMnSi. A dual-site module was revealed for LaCoSi and LaFeSi, in which transition metals were available for the N2 dissociation and La accelerates the NHx formation, respectively, breaking the Sabatier scaling relation. For LaMnSi, which is the most efficient for the N2 activation, the activity for ammonia synthesis is limited and confined by the scaling relations. The findings provide new insight into the working mechanism of intermetallic electrides.

Ammonia Cracking Catalyzed by Ni Nanoparticles Confined in the Framework of CeO2 Support

For the extraction of hydrogen from ammonia at low temperatures, we investigated Ni-based catalysts fabricated by the thermal decomposition of RNi5 intermetallics (R = Ce or Y). The interconnected microstructure formed via phase separation between the Ni catalyst and the resulting oxide support was observed to evolve via low-temperature thermal decomposition of RNi5. The resulting Ni/CeO2 nanocomposite exhibited superior catalytic activity of ∼25% at 400 °C for NH3 cracking. The high catalytic activity was attributed to the interlocking of Ni nanoparticles with the CeO2 framework. The growth of Ni nanoparticles was prevented by this interconnected microstructure, in which the Ni nanoparticles incorporated nitrogen owing to the size effect, whereas Ni does not commonly form nitrides. To the best of our knowledge, this is a unique example of a microstructure that enhances catalytic NH3 cracking.

Multiple reaction pathway on alkaline earth imide supported catalysts for efficient ammonia synthesis

The tunability of reaction pathways is required for exploring efficient and low cost catalysts for ammonia synthesis. There is an obstacle by the limitations arising from scaling relation for this purpose. Here, we demonstrate that the alkali earth imides (AeNH) combined with transition metal (TM = Fe, Co and Ni) catalysts can overcome this difficulty by utilizing functionalities arising from concerted role of active defects on the support surface and loaded transition metals. These catalysts enable ammonia production through multiple reaction pathways. The reaction rate of Co/SrNH is as high as 1686.7 mmol·gCo-1·h-1 and the TOFs reaches above 500 h-1 at 400 °C and 0.9 MPa, outperforming other reported Co-based catalysts as well as the benchmark Cs-Ru/MgO catalyst and industrial wüstite-based Fe catalyst under the same reaction conditions. Experimental and theoretical results show that the synergistic effect of nitrogen affinity of 3d TMs and in-situ formed NH2- vacancy of alkali earth imides regulate the reaction pathways of the ammonia production, resulting in distinct catalytic performance different from 3d TMs. It was thus demonstrated that the appropriate combination of metal and support is essential for controlling the reaction pathway and realizing highly active and low cost catalysts for ammonia synthesis.

A 2D Ba2N Electride for Transition Metal-Free N2 Dissociation under Mild Conditions

N2 activation is a key step in the industrial synthesis of ammonia and other high-value-added N-containing chemicals, and typically is heavily reliant on transition metal (TM) sites as active centers to reduce the large activation energy barrier for N2 dissociation. In the present work, we report that a 2D electride of Ba2N with anionic electrons in the interlayer spacings works efficiently for TM-free N2 dissociation under mild conditions. The interlayer electrons significantly boost N2 dissociation with a very small activation energy of 35 kJ mol-1, as confirmed by the N2 isotopic exchange reaction. The reaction of anionic electrons with N2 molecules stabilizes (N2)2- anions, the so-called diazenide, in the large interlayer space (∼4.5 Å) sandwiched by 2 cationic slabs of Ba2N as the main intermediate.

Topological insulator as an efficient catalyst for oxidative carbonylation of amines

Topological materials have received much attention because of their robust topological surface states, which can be potentially applied in electronics and catalysis. Here, we show that the topological insulator bismuth selenide functions as an efficient catalyst for the oxidative carbonylation of amines with carbon monoxide and dioxygen to synthesize urea derivatives. For example, the carbonylation of butylamine can be completed over bismuth selenide nanoparticle catalyst in 4 hours at 20°C with a yield of 99%, whereas most noble metal-based catalysts do not function at such a low temperature. Density functional theory calculations further reveal that the topological surface states facilitate the activation of dioxygen through a triplet-to-singlet spin-conversion reaction, in which active oxygen species are formed with a barrier of 0.4 electron volts for the subsequent reactions with amine and carbon monoxide.

Discovery of Two-dimensional Hexagonal MBene HfBO and Exploration on its Potential for Lithium-Ion Storage

The practical applications of two-dimensional (2D) transition-metal borides (MBenes) have been severely hindered by the lack of accessible MBenes because of the difficulties in the selective etching of traditional ternary MAB phases with orthorhombic symmetry (ort-MAB). Here, we discover a family of ternary hexagonal MAB (h-MAB) phases and 2D hexagonal MBenes (h-MBenes) by ab initio predictions and experiments. Calculations suggest that the ternary h-MAB phases are more suitable precursors for MBenes than the ort-MAB phases. Based on the prediction, we report the experimental synthesis of h-MBene HfBO by selective removal of In from h-MAB Hf2 InB2 . The synthesized 2D HfBO delivered a specific capacity of 420 mAh g-1 as an anode material in lithium-ion batteries, demonstrating the potential for energy-storage applications. The discovery of this h-MBene HfBO added a new member to the growing family of 2D materials and provided opportunities for a wide range of novel applications.

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors

While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe2 nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios. Density functional theory calculations also proved that the addition of Nb to 2D WSe2 generates defect tolerance levels, thereby governing the charging and de-trapping mechanisms of the synaptic devices. Physically doped electronic synapses are expected to be a promising strategy for the development of bioinspired artificial electronic devices.

Spiers Memorial Lecture: Catalytic activation of molecular nitrogen for green ammonia synthesis: introduction and current status

The efficient synthesis of ammonia using carbon-footprint-free hydrogen under mild conditions is a grand challenge in chemistry today. To achieve this objective, novel concepts are needed for the activation process and catalyst. This article briefly reviews catalytic activation of N₂ for ammonia synthesis under mild conditions. The features of the various activation methods reported so far are summarized, looking chronologically back at progress in heterogeneous catalysts since the use of iron oxide for the Haber-Bosch process, and finally the technical challenges to be overcome are described. Establishing low work functions for the support materials of the metal catalysts is one key to reducing the activation barrier to dissociate N₂. Surfaces of electride materials that preserve the character of the bulk are shown to be useful for this purpose. The requirements of desired catalysts are high efficiency at low temperatures, Ru-free compositions, and chemical robustness in the ambient atmosphere.

Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure

Blue-emitting Cs₃Cu₂I₅ has attracted attention owing to its near-unity PL quantum yield and applications in DUV photodetectors and scintillators. Its PL properties originate from the unique local structure around the luminescent center, the [Cu₂I₅]^3- polyhedron iodocuprate anion consisting of the edge-shared CuI₃ triangle and the CuI₄ tetrahedron dimer, which is isolated by Cs⁺ ions. We found that solid-state reactions between CsI and CuI occur near room temperature (RT) to form Cs₃Cu₂I₅ and/or CsCu₂I₃ phases. High-quality thin films of these phases were obtained by the sequential deposition of CuI and CsI by thermal evaporation. We elucidated that the formation of interstitial Cu⁺ and the antisite of I^- at the Cs⁺ site in the CsI crystal through Cu⁺ and I^- diffusion results in the RT synthesis of Cs₃Cu₂I₅. The unique structure formation of the luminescent center was revealed using a model based on the low packing density of the CsCl-type crystal structure, similar sizes of Cs⁺ and I^- ions, and the high diffusivity of Cu⁺. The self-aligned patterning of the luminous regions on thin films was demonstrated.

Boosted Activity of Cobalt Catalysts for Ammonia Synthesis with BaAl2O4-xHy Electrides

Electrides are promising support materials to promote transition metal catalysts for ammonia synthesis due to their strong electron-donating ability. Cobalt (Co) is an alternative non-noble metal catalyst to ruthenium in ammonia synthesis; however, it is difficult to achieve acceptable activity at low temperatures due to the weak Co-N interaction. Here, we report a novel oxyhydride electride, BaAl₂O_4-xH_y, that can significantly promote ammonia synthesis over Co (500 mmol g_Co^-1 h^-1 at 340 °C and 0.90 MPa) with a very low activation energy (49.6 kJ mol^-1; 260-360 °C), which outperforms the state-of-the-art Co-based catalysts, being comparable to the latest Ru catalyst at 300 °C. BaAl₂O_4-xH_y with a stuffed tridymite structure has interstitial cage sites where anionic electrons are accommodated. The surface of BaAl₂O_4-xH_y with very low work functions (1.7-2.6 eV) can donate electrons strongly to Co, which largely facilitates N₂ reduction into ammonia with the aid of the lattice H^- ions. The stuffed tridymite structure of BaAl₂O_4-xH_y with a three-dimensional AlO₄-based tetrahedral framework has great chemical stability and protects the accommodated electrons and H^- ions from oxidation, leading to robustness toward the ambient atmosphere and good reusability, which is a significant advantage over the reported hydride-based catalysts.

Room-Temperature CO2 Hydrogenation to Methanol over Air-Stable hcp-PdMo Intermetallic Catalyst

CO₂ hydrogenation to methanol is one of the most promising routes to CO₂ utilization. However, difficulty in CO₂ activation at low temperature, catalyst stability, catalyst preparation, and product separation are obstacles to the realization of a practical hydrogenation process under mild conditions. Here, we report a PdMo intermetallic catalyst for low-temperature CO₂ hydrogenation. This catalyst can be synthesized by the facile ammonolysis of an oxide precursor and exhibits excellent stability in air and the reaction atmosphere and significantly enhances the catalytic activity for CO₂ hydrogenation to methanol and CO compared with a Pd catalyst. A turnover frequency of 0.15 h^-1 was achieved for methanol synthesis at 0.9 MPa and 25 °C, which is comparable to or higher than that of the state-of-the-art heterogeneous catalysts under higher-pressure conditions (4-5 MPa).

Superconductivity in an Orbital-Reoriented SnAs Square Lattice: A Case Study of Li0.6 Sn2 As2 and NaSnAs

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs₃ structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li_0.6 Sn₂ As₂ and NaSnAs through a topotactic structural transformation of trigonal SnAs₃ to square SnAs₄ under pressure, resulting in a record-high T_c among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane p_z orbital to the in-plane p_x +p_y orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconducting systems.

Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts

Methanol, a raw material for C1 chemistry, is industrially produced under harsh conditions using Cu/ZnO-based catalysts. The synthesis of methanol under mild conditions is a challenging subject using an improved catalyst. Here, Zn_1-xSi_xO (ZSO) nanoparticles were synthesized by a thermal plasma method, and their work function and carrier concentration could be tuned by the Zn:Si ratio. The electrically conductive ZSO nanoparticles with a low work function enhanced the donation of electrons to loaded Cu and significantly promoted hydrogenation of CO to methanol, whereas insulating ZSO nanoparticles with a similar low work function did not. These results reveal that efficient electronic promotion by the transfer of electrons from a support to loaded Cu plays a key role in low-temperature methanol synthesis.

Extremely Shallow Valence Band in Lanthanum Trihydride

Hydride ions (H^-) in solvents are chemically active anions with strong electron-donating ability and are used as reducing agents in organic chemistry. Here, we evaluate the energy level of 1s-electrons in H^- accommodated in solid lanthanum hydrides, LaH_x (2 ≤ x ≤ 3), by photoemission (ultraviolet photoelectron and photoelectron yield spectroscopies) measurements and density functional theory calculations. We show that a very shallow valance band maximum with an ionization potential of 3.8 eV is attained in LaH₃ and that the primary cause is attributed to the small electronegativity of hydrogen and the significant bonding-antibonding interaction between neighboring H^-s with a close separation originating from the H-stuffed fluorite-related structure. These results encourage the challenge for p-type conduction in hydride semiconductors and provide a clue to the chemical understanding of polyhydride superconductors.

Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires

L1₀-ordered ferromagnetic nanowires with large coercivity are essential for realizing next-generation spintronic devices. Ferromagnetic nanowires have been commonly fabricated by first L1₀-ordering of initially disordered ferromagnetic films by annealing and then etching them into nanowire structures using lithography. If the L1₀-ordered nanowires can be fabricated using only lithography and subsequent annealing, the etching process can be omitted, which leads to an improvement in the fabrication process for spintronic devices. However, when nanowires are subjected to annealing, they easily transform into droplets, which is well-known as Plateau-Rayleigh instability. Here, we propose a concept of "nanostructure-induced L1₀-ordering" of twinned single-crystals in CoPt ferromagnetic nanowires with a 30 nm scale ultrafine linewidth on Si/SiO₂ substrates. The driving forces for nanostructure-induced L1₀-ordering during annealing are atomic surface diffusion and extremely large internal stress at ultrasmall 10 nm scale curvature radii of the nanowires. (Co/Pt)₆ multilayer nanowires are fabricated by a lift-off process combining electron-beam lithography and electron-beam evaporation, followed by annealing. Cross-sectional scanning transmission electron microscope images and nano-beam electron diffraction patterns clearly indicate nanostructure-induced L1₀-ordering of twinned single-crystals in the CoPt ferromagnetic nanowires, which exhibit a large coercivity of 10 kOe for perpendicular, longitudinal, and transversal directions of the nanowires. Two-dimensional grazing incidence X-ray diffraction shows superlattice peaks with Debye-Scherrer ring shapes, which also supports the nanostructure-induced L1₀-ordering. The fabrication method for nanostructure-induced L1₀-ordered CoPt ferromagnetic nanowires with twinned single-crystals on Si/SiO₂ substrates would be significant for future silicon-technology-compatible spintronic applications.

High Entropy van der Waals Materials

By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage of the high entropy concept and van der Waals systems to form a new family of materials category, namely the high entropy van der Waals materials (HEX, HE = high entropy, X = anion clusters) and describes the current issues and next challenges. The design strategy for HEX has integrated the local feature (e.g., composition, spin, and valence states) of structural units in high entropy materials and the holistic degrees of freedom (e.g., stacking, twisting, and intercalating species) in van der Waals materials, and is successfully used for the discovery of high entropy dichalcogenides, phosphorus tri-chalcogenides, halogens, and MXene. The rich combination and random distribution of the multiple metallic constituents on the nearly regular 2D lattice give rise to a flexible platform to study the correlation features behind a range of selected physical properties, e.g., superconductivity, magnetism, and metal-insulator transition. The deliberate design of structural units and their stacking configuration can also create novel catalysts to enhance their performance in a bunch of chemical reactions.

Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor

p-Type doping in Cu(I)-based semiconductors is pivotal for solar cell photoabsorbers and hole transport materials to improve the device performance. Impurity doping is a fundamental technology to overcome the intrinsic limits of hole concentration controlled by native defects. Here, we report that alkali metal impurities are prominent p-type dopants for the Cu(I)-based cation-deficient hole conductors. When the size mismatch with Cu⁺ in the host lattice is increased, these isovalent impurities are preferentially located at interstitial positions to interact with the constituent Cu cations, forming stable impurity-defect complexes. We demonstrate that the Cs impurity in γ-CuI semiconductors enhances hole concentration controllability for single crystals and thin films in the range of 10¹³-10¹⁹ cm^-3. First-principles calculations indicate that the Cs impurity forms impurity-defect complexes that act as shallow acceptors leading to the increased p-type conductivity. This isovalent doping provides an approach for controlled doping into cation-deficient semiconductors through an interaction of impurities with native defects.

Intermetallic Copper-Based Electride Catalyst with High Activity for C-H Oxidation and Cycloaddition of CO2 into Epoxides

Inorganic electrides have been proved to be efficient hosts for incorporating transition metals, which can effectively act as active sites giving an outstanding catalytic performance. Here, it is demonstrated that a reusable and recyclable (for more than 7 times) copper-based intermetallic electride catalyst (LaCu0.67 Si1.33 ), in which the Cu sites activated by anionic electrons with low-work function are uniformly dispersed in the lattice framework, shows vast potential for the selective C-H oxidation of industrially important hydrocarbons and cycloaddition of CO2 with epoxide. This leads to the production of value-added cyclic carbonates under mild reaction conditions. Importantly, the LaCu0.67 Si1.33 catalyst enables much higher turnover frequencies for the C-H oxidation (up to 25 276 h-1 ) and cycloaddition of CO2 into epoxide (up to 800 000 h-1 ), thus exceeding most nonnoble as well as noble metal catalysts. Density functional theory investigations have revealed that the LaCu0.67 Si1.33 catalyst is involved in the conversion of N-hydroxyphthalimide (NHPI) into the phthalimido-N-oxyl (PINO), which then triggers selective abstraction of an H atom from ethylbenzene for the generation of a radical susceptible to further oxygenation in the presence of O2 .

18-Crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics

Recently, an "interlayer" has been often adopted in organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs). The term "interlayer" infers that the layer function is not clear, but it improves electroluminescence (EL) performance. In this respect, it is of interest to determine the exact role of the interlayer and how it works in PeLEDs. In this study, the interlayer is determined to play a crucial role in suppressing the chemical reaction between the metal oxide and hybrid perovskite layers. Nevertheless, the use of an interlayer, a wide gap insulator, does not guarantee the best PeLED performance because it hinders charge injection into the emission layer. Here, a method is proposed that does not apply an "interlayer" but enables simultaneous attainment of high EL performance and outstanding device stability. 18-crown 6-ether (18C6) additive (2.5 mg mL^-1 ) is found to fully suppress the chemical reaction between the metal oxide and hybrid perovskite layers. With the 18C6 additive, an 82-fold longer device lifetime and very low operating voltage (3.2 V at 10 000 cd m^-2 ) are demonstrated in a PeLED.

Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications

Copper iodide (CuI) is a promising p-type transparent semiconductor with excellent carrier mobility. However, the high hole concentration in conventionally fabricated CuI including the single crystal hinders its applicability to the channel layer of thin-film transistors. We found that Zn substitution into Cu+ sites can effectively reduce the hole concentration. Experimental and computational examinations showed that the dominant mechanism involved the formation of a defect pair, the Zn-substituted Cu site (ZnCu) and Cu vacancy (VCu), and the simultaneous suppression of VCu arising from the stabilization of Cu+ in the Zn-substituted CuI lattice, rather than hole compensation by the electrons generated from Zn2+ substitution into Cu+ sites. Our results show that the hole concentration of Zn-substituted CuI is tunable in the range of 1014-1018 cm-3, making it suitable for thin-film transistors and hole transport layers in OLEDs.

Unconventional excitonic states with phonon sidebands in layered silicon diphosphide

Complex correlated states emerging from many-body interactions between quasiparticles (electrons, excitons and phonons) are at the core of condensed matter physics and material science. In low-dimensional materials, quantum confinement affects the electronic, and subsequently, optical properties for these correlated states. Here, by combining photoluminescence, optical reflection measurements and ab initio theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP₂), where the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus-phosphorus chains and holes extended in two-dimensional SiP₂ layers. The excitonic state and emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Our ab initio many-body calculations confirm that the observed phonon sideband results from the correlated interaction between excitons and optical phonons. With these results, we propose layered SiP₂ as a platform for the study of excitonic physics and many-particle effects.

Unique Conduction Band Minimum of Semiconductors Possessing a Zincblende-Type Framework

Tetrahedral semiconductors such as Si adopt a diamond-type crystal structure with low packing density arising from open cavities in the crystallographic space. By taking LiAlGe as an example, we propose a zincblende-type framework as a platform for semiconductors possessing electroactive cavities. LiAlGe adopts a half-Heusler-type crystal structure including an ordered diamond-type sublattice (zincblende-type) (AlGe) and is an indirect semiconductor with a band gap of ∼0.1 eV. The conduction band minimum (CBM) is uniquely located at the cavity space surrounded by four cations (Al₄) in real space. The bond ionicity and cation (Al) p orbitals located around the Fermi energy are requisite for the CBM to float in the cavity space. DFT calculations indicate the conversion of the semiconductor to a semimetallic electride under a pressure of ∼8 GPa, which is accompanied by band gap collapse due to electron transfer from valence band maximum to the cavity space. The high-pressure electride of LiAlGe formed under a very small critical pressure is derived from the presence of inherent crystallographic cavities having deep orbital levels energetically. This finding suggests the possible utilization of electroactive cavity spaces in tetrahedral semiconductors, which are widely used in modern electronic devices.

Unique Catalytic Mechanism for Ru-Loaded Ternary Intermetallic Electrides for Ammonia Synthesis

Intermetallic electrides have recently shown their priority as catalyst components in ammonia synthesis and CO₂ activation. However, their function mechanism has been elusive since its inception, which hinders the further development of such catalysts. In this work, ternary intermetallic electrides La-TM-Si (TM = Co, Fe, and Mn) were synthesized as hosts of ruthenium (Ru) particles for ammonia synthesis catalysis. Although they have the same crystal structure and possess low work functions commonly, the promotion effects on Ru particles rather differ from each other. The catalytic activity follows the sequence of Ru/LaCoSi > Ru/LaFeSi > Ru/LaMnSi. Furthermore, Ru/LaCoSi exhibits much better catalytic durability than the other two. A combination of experiments and first-principles calculations shows that apparent N₂ activation energy on each catalyst is much lower than that over conventional Ru-based catalysts, which suggests that N₂ dissociation can be conspicuously promoted by the concerted actions of the specific electronic structure and atomic configuration of intermetallic electride-supported catalysts. The NH_x formations proceeded on La are energetically favored, which makes it possible to bypass the scaling relations based on only Ru as the active site. The rate-determining step of Ru/La-TM-Si was identified to be NH₂ formation. The transition metal (TM) in La-TM-Si electrides has a significant influence on the metal-support interaction of Ru and La-TM-Si. These findings provide a guide for the development of new and effective catalyst hosts for ammonia synthesis and other hydrogenation reactions.

Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction

Resistive switching induced by ion migration is promising for applications such as random-access memory (ReRAM) and neuromorphic transistors. Hydride ions (H^-) are an interesting candidate as the migration ion for resistive switching devices because they have fast diffusion in several compounds at room temperature and doping/dedoping can be used effectively to achieve significant changes in the electronic conductivity. Here, we report reversible resistive switching characteristics in rare-earth oxyhydrides (REH_xO_(3-x)/2) induced by field insertion/extraction of H^-. The current-voltage measurements revealed that the resistive switching response, hysteresis, and switching voltage vary greatly with the H^-/O^2- ratio in the films. We fabricated a ReRAM device using Ti/YH_1.3O_0.85/MoO_x structure and confirmed the bipolar-type operation with the resistance switching ratio of 1 order of magnitude over 1000 cycles. The composition gradient of H^-/O^2- in YH_xO_(3-x)/2 films, in addition to the hydrogen-absorbing ability of the top electrode, is essential for effective device operation. Our findings show that hydride-conducting solid-state electrolytes are suitable for resistive switching device development.

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution

Tin mono-selenide (SnSe) exhibits the world record of thermoelectric conversion efficiency ZT in the single crystal form, but the performance of polycrystalline SnSe is restricted by low electronic conductivity (σ) and high thermal conductivity (κ), compared to those of the single crystal. Here an effective strategy to achieve high σ and low κ simultaneously is reported on p-type polycrystalline SnSe with isovalent Te ion substitution. The nonequilibrium Sn(Se1- x Tex ) solid solution bulks with x up to 0.4 are synthesized by the two-step process composed of high-temperature solid-state reaction and rapid thermal quenching. The Te ion substitution in SnSe realizes high σ due to the 103 -times increase in hole carrier concentration and effectively reduced lattice κ less than one-third at room temperature. The large-size Te ion in Sn(Se1- x Tex ) forms weak SnTe bonds, leading to the high-density formation of hole-donating Sn vacancies and the reduced phonon frequency and enhanced phonon scattering. This result-doping of large-size ions beyond the equilibrium limit-proposes a new idea for carrier doping and controlling thermal properties to enhance the ZT of polycrystalline SnSe.

High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate

Metastable cubic (Sn_1-xPb_x)Se with x ≥ 0.5 is expected to be a high mobility semiconductor due to its Dirac-like electronic state, but it has an excessively high carrier concentration of ∼10¹⁹ cm^-3 and is not suitable for semiconductor device applications such as thin film transistors and solar cells. Further, thin films of (Sn_1-xPb_x)Se require a complicated synthesis process because of the high vapor pressure of Pb. We herein report the direct growth of metastable cubic (Sn_1-xCa_x)Se films alloyed with CaSe, which has a wider bandgap and lower vapor pressure than PbSe. The cubic (Sn_1-xCa_x)Se epitaxial films with x = 0.4-0.8 are stabilized on YSZ (111) single crystalline substrates by pulsed laser deposition. (Sn_1-xCa_x)Se has a direct-transition-type bandgap, and the bandgap energy can be varied from 1.4 eV (x = 0.4) to 2.0 eV (x = 0.8) by changing x. These films with x = 0.4-0.6 show p-type conduction with low hole carrier concentrations of ∼10¹⁷ cm^-3. Hall mobility analysis suggests that the hole transport would be dominated by 180° rotational domain structures, which is specific to (111) oriented epitaxial films. However, it, in turn, clarifies that the in-grain carrier mobility in the (Sn_0.6Ca_0.4)Se film is as high as 322 cm²/(Vs), which is much higher than those in thermodynamically stable layered SnSe and other Sn-based layered semiconductor films at room temperature. Therefore, the present results prove the potential of high mobility (Sn_1-xCa_x)Se films for semiconductor device applications via a simple thin-film deposition process.

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

We report the synthesis and optoelectronic properties of high phase-purity (>94 mol %) bulk polycrystals of KCoO₂-type layered nitrides AETMN₂ (AE = Sr, Ba; and TM = Ti, Zr, Hf), which are expected to exhibit unique electron transport properties originating from their natural two-dimensional (2D) electronic structure, but high-purity intrinsic samples have yet been reported. The bulks were synthesized using a solid-state reaction between AENH and TMN precursors with NaN₃ to achieve high N chemical potential during the reaction. The AETMN₂ bulks are n-type semiconductors with optical band gaps of 1.63 eV for SrTiN₂, 1.97 eV for BaZrN₂, and 2.17 eV for BaHfN₂. SrTiN₂ and BaZrN₂ bulks show degenerated electron conduction due to the natural high-density electron doping and paramagnetic behavior in all of the temperature ranges examined, while such unintentional carrier generation is largely suppressed in BaHfN₂, which exhibits nondegenerated electron conduction. The BaHfN₂ sample also exhibits weak ferromagnetic behavior at temperatures lower than 35 K. Density functional theory calculations suggest that the high-density electron carriers in SrTiN₂ come from oxygen impurity substitution at the N site (O_N) acting as a shallow donor even if the high-N chemical potential synthesis conditions are employed. On the other hand, the formation energy of O_N becomes larger in BaHfN₂ because of the stronger TM-N chemical bonds. Present results demonstrate that the easiness of impurity incorporation is designed by density functional calculations to produce a more intrinsic semiconductor in wider chemical conditions, opening a way to cultivating novel functional materials that are sensitive to atmospheric impurities and defects.

Hexagonal BaTiO(3-x)Hx Oxyhydride as a Water-Durable Catalyst Support for Chemoselective Hydrogenation

We present heavily H^--doped BaTiO_(3-x)H_x (x ≈ 1) as an efficient and water-durable catalyst support for Pd nanoparticles applicable to liquid-phase hydrogenation reactions. The BaTiO_(3-x)H_x oxyhydride with a hexagonal crystal structure (P6₃/mmc) was synthesized by the direct reaction of BaH₂ and TiO₂ at 800 °C under a stream of hydrogen, and the estimated chemical composition was BaTiO_2.01H_0.96. Density functional theory calculations and magnetic measurements indicated that such heavy H^- doping results in a metallic nature with delocalized electrons and a low work function. The potential of BaTiO_(3-x)H_x as a catalyst support was examined for the selective hydrogenation of unsaturated C-C bonds by Pd nanoparticles deposited on BaTiO_(3-x)H_x. We found that the turnover frequency for phenylacetylene hydrogenation per total amount of Pd in Pd/BaTiO_(3-x)H_x was the highest among the supported Pd catalysts reported to date. The strong electronic charge transfer between Pd and the support, as confirmed by X-ray photoelectron spectroscopy measurements, can be attributed to be responsible for such high catalytic activity. The combination of the BaTiO_(3-x)H_x support and Pd nanoparticles provides for the selective hydrogenation of unsaturated C-C bonds and highlights the validity of catalyst design that integrates H^- in support materials.

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3 (X = As, P)

Here, we report on a new kind of compound, X_δIr₄X_12-δ (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic-resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (T_c) of 4.4 K (4.8 K) in IrAs₃ (IrP₃). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in X_δIr₄X_12-δ are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct pairing mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of T_c. The discovery of X_δIr₄X_12-δ provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements.