A quantum coherent spin in hexagonal boron nitride at ambient conditions

Solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration-ideally under ambient conditions-hold great promise for the implementation of quantum networks and sensors. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here we report quantum coherent control under ambient conditions of a single-photon-emitting defect spin in a layered van der Waals material, namely, hexagonal boron nitride. We identify that the carbon-related defect has a spin-triplet electronic ground-state manifold. We demonstrate that the spin coherence is predominantly governed by coupling to only a few proximal nuclei and is prolonged by decoupling protocols. Our results serve to introduce a new platform to realize a room-temperature spin qubit coupled to a multiqubit quantum register or quantum sensor with nanoscale sample proximity.

Engineering Quantum Light Sources with Flat Optics

Quantum light sources are essential building blocks for many quantum technologies, enabling secure communication, powerful computing, and precise sensing and imaging. Recent advancements have witnessed a significant shift toward the utilization of "flat" optics with thickness at subwavelength scales for the development of quantum light sources. This approach offers notable advantages over conventional bulky counterparts, including compactness, scalability, and improved efficiency, along with added functionalities. This review focuses on the recent advances in leveraging flat optics to generate quantum light sources. Specifically, the generation of entangled photon pairs through spontaneous parametric down-conversion in nonlinear metasurfaces, and single photon emission from quantum emitters including quantum dots and color centers in 3D and 2D materials are explored. The review covers theoretical principles, fabrication techniques, and properties of these sources, with particular emphasis on the enhanced generation and engineering of quantum light sources using optical resonances supported by nanostructures. The diverse application range of these sources is discussed and the current challenges and perspectives in the field are highlighted.

Room-temperature strong coupling in a single-photon emitter-metasurface system

Solid state single-photon sources with high brightness and long coherence time are promising qubit candidates for modern quantum technology. To prevent decoherence processes and preserve the integrity of the qubits, decoupling the emitters from their surrounding environment is essential. To this end, interfacing single photon emitters (SPEs) with high-finesse cavities is required, especially in the strong coupling regime, when the interaction between emitters can be mediated by cavity fields. However, achieving strong coupling at elevated temperatures is challenging due to competing incoherent processes. Here, we address this long-standing problem by using a quantum system, which comprises a class of SPEs in hexagonal boron nitride and a dielectric cavity based on bound states in the continuum (BIC). We experimentally demonstrate, at room temperature, strong coupling of the system with a large Rabi splitting of ~4 meV thanks to the combination of the narrow linewidth and large oscillator strength of the emitters and the efficient photon trapping of the BIC cavity. Our findings unveil opportunities to advance the fundamental understanding of quantum dynamical system in strong coupling regime and to realise scalable quantum devices capable of operating at room temperature.

Optically addressable spin defects coupled to bound states in the continuum metasurfaces

Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances, exceeding 102, leveraging quasi-bound states in the continuum (qBICs). Coupling between defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth and increased narrowband spin-readout efficiency. Our findings demonstrate a new class of metasurfaces for spin-defect-based technologies and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission.

First-principles theory of the nitrogen interstitial in hBN: a plausible model for the blue emitter

Color centers in hexagonal boron nitride (hBN) have attracted considerable attention due to their remarkable optical properties enabling robust room temperature photonics and quantum optics applications in the visible spectral range. On the other hand, identification of the microscopic origin of color centers in hBN has turned out to be a great challenge that hinders the in-depth theoretical characterization, on-demand fabrication, and development of integrated photonic devices. This is also true for the blue emitter, which is a result of irradiation damage in hBN, emitting at 436 nm wavelength with desirable properties. Here, we propose the negatively charged nitrogen split interstitial defect in hBN as a plausible microscopic model for the blue emitter. To this end, we carried out a comprehensive first-principles theoretical study of the nitrogen interstitial. We carefully analyzed the accuracy of first-principles methods and showed that the commonly used HSE hybrid exchange-correlation functional fails to describe the electronic structure of this defect. Using the generalized Koopman's theorem, we fine-tuned the functional and obtained a zero-phonon photoluminescence (ZPL) energy in the blue spectral range. We showed that the defect exhibits a high emission rate in the ZPL line and features a characteristic phonon side band that resembles the blue emitter's spectrum. Furthermore, we studied the electric field dependence of the ZPL and numerically showed that the defect exhibits a quadratic Stark shift that is perpendicular to plane electric fields, making the emitter insensitive to electric field fluctuations in the first order. Our work emphasizes the need for assessing the accuracy of common first-principles methods in hBN and exemplifies a workaround methodology. Furthermore, our work is a step towards understanding the structure of the blue emitter and utilizing it in photonics applications.

Scalable Bright and Pure Single Photon Sources by Droplet Epitaxy on InP Nanowire Arrays

High-quality quantum light sources are crucial components for the implementation of practical and reliable quantum technologies. The persistent challenge, however, is the lack of scalable and deterministic single photon sources that can be synthesized reproducibly. Here, we present a combination of droplet epitaxy with selective area epitaxy to realize the deterministic growth of single quantum dots in nanowire arrays. By optimization of the single quantum dot growth and the nanowire cavity design, single emissions are effectively coupled with the dominant mode of the nanowires to realize Purcell enhancement. The resonance-enhanced quantum emitter system boasts a brightness of millions of counts per second with nanowatt excitation power, a short radiation lifetime of 350 ± 5 ps, and a high single-photon purity with g(2)(0) value of 0.05 with continuous wave above-band excitation. Finite-difference time-domain (FDTD) simulation results show that the emissions of single quantum dots are coupled into the TM01 mode of the nanowires, giving a Purcell factor ≈ 3. Our technology can be used for creating on-chip scalable single photon sources for future quantum technology applications including quantum networks, quantum computation, and quantum imaging.

Optical Nonlinearity Enabled Super-Resolved Multiplexing Microscopy

Optical multiplexing for nanoscale object recognition is of great significance within the intricate domains of biology, medicine, anti-counterfeiting, and microscopic imaging. Traditionally, the multiplexing dimensions of nanoscopy are limited to emission intensity, color, lifetime, and polarization. Here, a novel dimension, optical nonlinearity, is proposed for super-resolved multiplexing microscopy. This optical nonlinearity is attributable to the energy transitions between multiple energy levels of the doped lanthanide ions in upconversion nanoparticles (UCNPs), resulting in unique optical fingerprints for UCNPs with different compositions. A vortex beam is applied to transport the optical nonlinearity onto the imaging point-spread function (PSF), creating a robust super-resolved multiplexing imaging strategy for differentiating UCNPs with distinctive optical nonlinearities. The composition information of the nanoparticles can be retrieved with variations of the corresponding PSF in the obtained image. Four channels multiplexing super-resolved imaging with a single scanning, applying emission color and nonlinearity of two orthogonal imaging dimensions with a spatial resolution higher than 150 nm (1/6.5λ), are demonstrated. This work provides a new and orthogonal dimension - optical nonlinearity - to existing multiplexing dimensions, which shows great potential in bioimaging, anti-counterfeiting, microarray assays, deep tissue multiplexing detection, and high-density data storage.

Bottom-up, Chip-Scale Engineering of Low Threshold, Multi-Quantum-Well Microring Lasers

Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic circuitry. Specifically, III-V materials that are of technological relevance have attracted considerable attention. However, traditional microcavity laser fabrication techniques, including top-down etching and bottom-up catalytic growth, often result in undesirable cavity geometries with poor scalability and reproducibility. Here, we utilize the selective area epitaxy method to deterministically engineer thousands of microring lasers on a single chip. Specifically, we realize a catalyst-free, epitaxial growth of a technologically critical material, InAsP/InP, in a ring-like cavity with embedded multi-quantum-well heterostructures. We elucidate a detailed growth mechanism and leverage the capability to deterministically control the adatom diffusion lengths on selected crystal facets to reproducibly achieve ultrasmooth cavity sidewalls. The engineered devices exhibit a tunable emission wavelength in the telecommunication O-band and show low-threshold lasing with over 80% device efficacy across the chip. Our work marks a significant milestone toward the implementation of a fully integrated III-V materials platform for next-generation high-density integrated photonic and optoelectronic circuits.

Deterministic Fabrication of a Coupled Cavity-Emitter System in Hexagonal Boron Nitride

Light-matter interactions in optical cavities underpin many applications of integrated quantum photonics. Among various solid-state platforms, hexagonal boron nitride (hBN) is gaining considerable interest as a compelling van der Waals host of quantum emitters. However, progress to date has been limited by an inability to engineer simultaneously an hBN emitter and a narrow-band photonic resonator at a predetermined wavelength. Here, we overcome this problem and demonstrate deterministic fabrication of hBN nanobeam photonic crystal cavities with high quality factors over a broad spectral range (∼400 to 850 nm). We then fabricate a monolithic, coupled cavity-emitter system designed for a blue quantum emitter that has an emission wavelength of 436 nm and is induced deterministically by electron beam irradiation of the cavity hotspot. Our work constitutes a promising path to scalable on-chip quantum photonics and paves the way to quantum networks based on van der Waals materials.

Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor

Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material that can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (V_B^-) defects in a powder of ultrathin hBN nanoflakes (<10 atomic monolayers thick on average) and measure the longitudinal spin relaxation time (T₁) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd³⁺ ions and observe a clear T₁ quenching under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements, including T₁ relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications and make steps toward the realization of a truly 2D, ultrasensitive quantum sensor.

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride

Negatively charged boron vacancies (V_B^-) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate the charge state switching of V_B defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states (V_B^- ⇌ V_B⁰ + e^-), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the V_B charge state, and to stabilize the -1 state which is a prerequisite for spin manipulation and optical readout of the defect.

Layered materials as a platform for quantum technologies

Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.

Dual-Band Coupling of Phonon and Surface Plasmon Polaritons with Vibrational and Electronic Excitations in Molecules

Strong coupling (SC) between light and matter excitations bears intriguing potential for manipulating material properties. Typically, SC has been achieved between mid-infrared (mid-IR) light and molecular vibrations or between visible light and excitons. However, simultaneously achieving SC in both frequency bands remains unexplored. Here, we introduce polaritonic nanoresonators (formed by h-BN layers on Al ribbons) hosting surface plasmon polaritons (SPPs) at visible frequencies and phonon polaritons (PhPs) at mid-IR frequencies, which simultaneously couple to excitons and molecular vibrations in an adjacent layer of CoPc molecules, respectively. Employing near-field optical nanoscopy, we demonstrate the colocalization of near fields at both visible and mid-IR frequencies. Far-field transmission spectroscopy of the nanoresonator structure covered with a layer of CoPc molecules shows clear mode splittings in both frequency ranges, revealing simultaneous SPP-exciton and PhP-vibron coupling. Dual-band SC may offer potential for manipulating coupling between exciton and molecular vibration in future optoelectronics, nanophotonics, and quantum information applications.

Time-dependent Mandel Q parameter analysis for a hexagonal boron nitride single photon source

The time-dependent Mandel Q parameter, Q(T), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q(T) to characterise single photon emission from a quantum emitter in hexagonal boron nitride (hBN). Under pulsed excitation a negative Q parameter was measured, indicating photon antibunching at an integration time of 100 ns. For larger integration times Q is positive and the photon statistics become super-Poissonian, and we show by comparison with a Monte Carlo simulation for a three-level emitter that this is consistent with the effect of a metastable shelving state. Looking towards technological applications for hBN single photon sources, we propose that Q(T) provides valuable information on the intensity stability of single photon emission. This is useful in addition to the commonly used g⁽²⁾(τ) function for the complete characterisation of a hBN emitter.

Real-Time Ratiometric Optical Nanoscale Thermometry

All-optical nanothermometry has become a powerful, remote tool for measuring nanoscale temperatures in applications ranging from medicine to nano-optics and solid-state nanodevices. The key features of any candidate nanothermometer are brightness, sensitivity, and (signal, spatial, and temporal) resolution. Here, we demonstrate a real-time, diamond-based nanothermometry technique with excellent sensitivity (1.8% K^-1) and record-high resolution (5.8 × 10⁴ K Hz^-1/2 W cm^-2) based on codoped nanodiamonds. The distinct performance of our approach stems from two factors: (i) temperature sensors─nanodiamonds cohosting two group IV color centers─engineered to emit spectrally separated Stokes and anti-Stokes fluorescence signals under excitation by a single laser source and (ii) a parallel detection scheme based on filtering optics and high-sensitivity photon counters for fast readout. We demonstrate the performance of our method by monitoring temporal changes in the local temperature of a microcircuit and a MoTe₂ field-effect transistor. Our work advances a powerful, alternative strategy for time-resolved temperature monitoring and mapping of micro-/nanoscale devices such as microfluidic channels, nanophotonic circuits, and nanoelectronic devices, as well as complex biological environments such as tissues and cells.

Quantum Emitters in Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.

Lanthanide Ion Resonance-Driven Rayleigh Scattering of Nanoparticles for Dual-Modality Interferometric Scattering Microscopy

Light scattering from nanoparticles is significant in nanoscale imaging, photon confinement. and biosensing. However, engineering the scattering spectrum, traditionally by modifying the geometric feature of particles, requires synthesis and fabrication with nanometre accuracy. Here it is reported that doping lanthanide ions can engineer the scattering properties of low-refractive-index nanoparticles. When the excitation wavelength matches the ion resonance frequency of lanthanide ions, the polarizability and the resulted scattering cross-section of nanoparticles are dramatically enhanced. It is demonstrated that these purposely engineered nanoparticles can be used for interferometric scattering (iSCAT) microscopy. Conceptually, a dual-modality iSCAT microscopy is further developed to identify different nanoparticle types in living HeLa cells. The work provides insight into engineering the scattering features by doping elements in nanomaterials, further inspiring exploration of the geometry-independent scattering modulation strategy.

Coupling spin defects in hexagonal boron nitride to titanium dioxide ring resonators

Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO₂ to enhance the emission from negatively charged boron vacancies (V_B^-) in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled V_B^- showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.

Quantum Interference of Resonance Fluorescence from Germanium-Vacancy Color Centers in Diamond

Resonance fluorescence from a quantum emitter is an ideal source to extract indistinguishable photons. By using the cross-polarization to suppress the laser scattering, we observed resonance fluorescence from GeV color centers in diamond at cryogenic temperature. The Fourier-transform-limited line width emission with T₂/2T₁ ∼ 0.86 allows for two-photon interference based on single GeV color center. Under pulsed excitation, the separated photons exhibit a Hong-Ou-Mandel quantum interference above classical limit, whereas the continuous-wave excitation leads to a coalescence time window of 1.05 radiative lifetime. In addition, we demonstrated a single-shot readout of spin states with a fidelity of 74%. Our experiments lay down the foundation for building a quantum network with GeV color centers in diamond.

Electrical control of quantum emitters in a Van der Waals heterostructure

Controlling and manipulating individual quantum systems in solids underpins the growing interest in the development of scalable quantum technologies. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large bandgap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study the electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN-graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behavior. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~160 MHz. Our results enhance the potential of hBN for tunable solid-state quantum emitters for the growing field of quantum information science.

Excited-State Optically Detected Magnetic Resonance of Spin Defects in Hexagonal Boron Nitride

Negatively charged boron vacancy (V_{B}^{-}) centers in hexagonal boron nitride (h-BN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of D_{ES}=2160  MHz and its associated optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. In contrast to nitrogen vacancy (NV^{-}) centers in diamond, the ODMR contrast of V_{B}^{-} centers is more prominent at cryotemperature than at room temperature. The ES has a g factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anticrossing of the V_{B}^{-} defects under varying external magnetic fields. Our results provide important information for utilizing the spin defects of h-BN in quantum technology.

Integrated room temperature single-photon source for quantum key distribution: publisher's note

This publisher's note contains a correction to Opt. Lett.47, 1673 (2022)10.1364/OL.454450.

Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized VB- Spin States in hBN

Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (V_B^-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the V_B^- spin with a characteristic decay time T_coh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the V_B^- spin with the three nearest ¹⁴N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.

Integrated room temperature single-photon source for quantum key distribution

High-purity single-photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realize an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.

Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays

Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (V_B^-) centers. Here, we demonstrate a scalable method to enhance the V_B^- emission using an array of SiO₂ nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the V_B^- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the V_B^- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.

Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm². Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.

Hybrid device of hexagonal boron nitride nanoflakes with defect centres and a nano-fibre Bragg cavity

Solid-state quantum emitters coupled with a single mode fibre are of interest for photonic and quantum applications. In this context, nanofibre Bragg cavities (NFBCs), which are microcavities fabricated in an optical nanofibre, are promising devices because they can efficiently couple photons emitted from the quantum emitters to the single mode fibre. Recently, we have realized a hybrid device of an NFBC and a single colloidal CdSe/ZnS quantum dot. However, colloidal quantum dots exhibit inherent photo-bleaching. Thus, it is desired to couple an NFBC with hexagonal boron nitride (hBN) as stable quantum emitters. In this work, we realize a hybrid system of an NFBC and ensemble defect centres in hBN nanoflakes. In this experiment, we fabricate NFBCs with a quality factor of 807 and a resonant wavelength at around 573 nm, which matches well with the fluorescent wavelength of the hBN, using helium-focused ion beam (FIB) system. We also develop a manipulation system to place hBN nanoflakes on a cavity region of the NFBCs and realize a hybrid device with an NFBC. By exciting the nanoflakes via an objective lens and collecting the fluorescence through the NFBC, we observe a sharp emission peak at the resonant wavelength of the NFBC.

Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities

Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (V_B ^- ) centers, are emerging candidates for quantum sensing. However, the V_B ^- defects suffer from low quantum efficiency and, as a result, exhibit weak photoluminescence. In this work, a scalable approach is demonstrated to dramatically enhance the V_B ^- emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, two orders of magnitude are extracted in photoluminescence enhancement associated with a corresponding twofold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and in realization of nanophotonic devices with spin defects in hexagonal boron nitride.

Purcell Enhancement of a Cavity-Coupled Emitter in Hexagonal Boron Nitride

Integration of solid-state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic-based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for a quantum emitter. In this work, the resonant tuning of a monolithic cavity integrated hBN quantum emitter is demonstrated through gas condensation at cryogenic temperature. In resonance, an emission enhancement and lifetime reduction are observed, with an estimate for the Purcell factor of ≈15.

Enhanced Emission from Interlayer Excitons Coupled to Plasmonic Gap Cavities

The emergence of interlayer excitons (IEs) from atomic layered transition metal dichalcogenides (TMDCs) heterostructures has drawn tremendous attention due to their unique and exotic optoelectronic properties. Coupling the IEs into optical cavities provides distinctive electromagnetic environments which plays an important role in controlling multiple optical processes such as optical nonlinear generation or photoluminescence enhancement. Here, the integration of IEs in TMDCs into plasmonic nanocavities based on a nanocube on a metallic mirror is reported. Spectroscopic studies reveal an order of magnitude enhancement of the IE at room temperature and a 5-time enhancement in fluorescence at cryogenic temperatures. Cavity modeling reveals that the enhancement of the emission is attributed to both increased excitation efficiency and Purcell effect from the cavity. The results show a novel method to control the excitonic processes in TMDC heterostructures to build high performance photonics and optoelectronics devices.

Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride

Single-photon emitters in hexagonal boron nitride (hBN) are promising constituents for integrated quantum photonics. Specifically, engineering these emitters in large-area, high-quality, exfoliated hBN is needed for their incorporation into photonic devices and two dimensional heterostructures. Here, we report on two different routes to generate high-density quantum emitters with excellent optical properties-including high brightness and photostability. We study in detail high-temperature annealing and plasma treatments as an efficient means to generate dense emitters. We show that both an optimal oxygen flow rate and annealing temperature are required for the formation of high-density quantum emitters. In parallel, we demonstrate that the plasma treatment in various environments, followed by standard annealing is also an effective route for emission engineering. Our work provides vital information for the fabrication of quantum emitters in high-quality, exfoliated hBN flakes and paves the way toward the integration of the quantum emitters with photonic devices.

Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities

Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the VB-. Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.

Recoil implantation using gas-phase precursor molecules

Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed "recoil implantation" - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat. Commun., 2020, 11, 5039]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar+ ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation with the potential to be suitable to a larger portion of the periodic table, and to applications in which thin film deposition/removal is impractical.

Near-Field Excited Archimedean-like Tiling Patterns in Phonon-Polaritonic Crystals

Phonon-polaritons (PhPs) arise from the strong coupling of photons to optical phonons. They offer light confinement and harnessing below the diffraction limit for applications including sensing, imaging, superlensing, and photonics-based communications. However, structures consisting of both suspended and supported hyperbolic materials on periodic dielectric substrates are yet to be explored. Here we investigate phonon-polaritonic crystals (PPCs) that incorporate hyperbolic hexagonal boron nitride (hBN) to a silicon-based photonic crystal. By using the near-field excitation in scattering-type scanning near-field optical microscopy (s-SNOM), we resolved two types of repetitive local field distribution patterns resembling the Archimedean-like tiling on hBN-based PPCs, i.e., dipolar-like field distributions and highly dispersive PhP interference patterns. We demonstrate the tunability of PPC band structures by varying the thickness of hyperbolic materials, supported by numerical simulations. Lastly, we conducted scattering-type nanoIR spectroscopy to confirm the interaction of hBN with photonic crystals. The introduced PPCs will provide the base for fabricating essential subdiffraction components of advanced optical systems in the mid-IR range.

Nanofabrication of high Q, transferable diamond resonators

Advancement of diamond based photonic circuitry requires robust fabrication protocols of key components - including diamond resonators and cavities. Here, we present 1D (nanobeam) photonic crystal cavities generated from single crystal diamond membranes utilising a metallic tungsten layer as a restraining, conductive and removable hard mask. The use of tungsten instead of a more conventional silicon oxide layer enables good repeatability and reliability of the fabrication procedures. The process yields high quality diamond cavities with quality factors (Q-factors) approaching 1 × 104. Finally, we show that the cavities can be picked up and transferred onto a trenched substrate to realise fully suspended diamond cavities. Our fabrication process demonstrates the capability of diamond membranes as modular components for broader diamond based quantum photonic circuitry.

Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride

We demonstrate the fabrication of large-scale arrays of single-photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ∼250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route toward spatially controlled generation of hBN SPEs and provide an effective and efficient method to create large-scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications.

Room temperature coherent control of spin defects in hexagonal boron nitride

Optically active spin defects are promising candidates for solid-state quantum information and sensing applications. To use these defects in quantum applications coherent manipulation of their spin state is required. Here, we realize coherent control of ensembles of boron vacancy centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure a spin-lattice relaxation time of 18 microseconds and a spin coherence time of 2 microseconds at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. By applying a method to decouple the spin state from its inhomogeneous nuclear environment the optically detected magnetic resonance linewidth is substantially reduced to several tens of kilohertz. Our results are important for the employment of van der Waals materials for quantum technologies, specifically in the context of high resolution quantum sensing of two-dimensional heterostructures, nanoscale devices, and emerging atomically thin magnets.

Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters

Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size ≤10 nm) are highly desirable, at this size range, their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this article, a facile, bottom-up technique for the fabrication of sub-10-nm hexagonal boron nitride (hBN) nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine is demonstrated. A simple stabilization protocol that significantly reduces intensity fluctuation by ≈85% and narrows the emission linewidth by ≈14% by employing a common sol-gel silica coating process is also implemented. This study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles.

Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged [Formula: see text] defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices.

Quantum Energy and Charge Transfer at Two-Dimensional Interfaces

Energy and charge transfer processes in interacting donor-acceptor systems are the bedrock of many fundamental studies and technological applications ranging from biosensing to energy storage and quantum optoelectronics. Central to the understanding and utilization of these transfer processes is having full control over the donor-acceptor distance. With their atomic thickness and ease of integrability, two-dimensional materials are naturally emerging as an ideal platform for the task. Here, we review how van der Waals semiconductors are shaping the field. We present a selection of some of the most significant demonstrations involving transfer processes in layered materials that deepen our understanding of transfer dynamics and are leading to intriguing practical realizations. Alongside current achievements, we discuss outstanding challenges and future opportunities.

Large few-layer hexagonal boron nitride flakes for nonlinear optics

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000µm². We show that hBN in this form can be integrated with photonic microstructures: as an example, we use a circular Bragg grating (CBG). The layer quality of the exfoliated hBN flake on and off a CBG is confirmed by Raman spectroscopy and second-harmonic generation (SHG) microscopy. We show that the SHG signal is uniform across the hBN sample outside the CBG and is amplified in the center of the CBG.

Versatile direct-writing of dopants in a solid state host through recoil implantation

Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe⁺ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices.

[U(H2O)2]{[(UO2)10O10(OH)2][(UO4)(H2O)2]}: A Mixed-Valence Uranium Oxide Hydrate Framework

A uranium oxide hydrate framework, [U(H₂O)₂]{[(UO₂)₁₀O₁₀(OH)₂][(UO₄)(H₂O)₂]} (UOF1), was synthesized hydrothermally using schoepite as a uranium precursor. The crystal strucutre of UOF1 was revealed with synchrotron single-crystal X-ray diffraction and confirmed with transmission electron miscroscopy. The typical uranyl oxide hydroxide layers similar to those in β-U₃O₈ are further connected via double-pentagonal-bipyramidal uranium polyhedra to form a three-dimensional (3D) framework structure with tetravalent uranium species inside the channels. The presence of mixed-valence uranium was investigated with a combination of X-ray absorption near-edge structure and diffuse reflectance spectroscopy. Apart from the major hexavalent uranium, evidence for tetravalent uranium was also found, consistent with the bond valence sum calculations. The successful preparation of UOF1 as the first pure uranium oxide hydrate framework sheds light on the structural understanding of the alteration of UO_2+x as either a mineral or spent nuclear fuel.

A Single Chiral Nanoparticle Induced Valley Polarization Enhancement

Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS₂ is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization, together with accelerated radiative recombination of valley excitons due to the Purcell effect. The experimental results are corroborated by the optical simulation using the finite-difference time-domain (FDTD) method. Additionally, the single chiral nanoparticle enables the observation of valley-polarized luminescence with a linear excitation. The results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.

Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Silicon carbide (SiC) has become a key player in the realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results highligh the key role of NV centers in SiC as a potential candidate for quantum information processing.

Controlled Doping of GeV and SnV Color Centers in Diamond Using Chemical Vapor Deposition

Group IV color centers in diamond (Si, Ge, Sn, and Pb) have recently emerged as promising candidates for realization of scalable quantum photonics. However, their synthesis in nanoscale diamond is still in its infancy. In this work we demonstrate controlled synthesis of selected group IV defects (Ge and Sn) into nanodiamonds and nanoscale single crystal diamond membranes by microwave plasma chemical vapor deposition. We take advantage of inorganic salts to prepare the chemical precursors that contain the required ions that are then incorporated into the growing diamond. Photoluminescence measurements confirm that the selected group IV emitters are present in the diamond without degrading its structural quality. Our results are important to expand the versatile synthesis of color centers in diamond.

Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities

Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si₃N₄) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si₃N₄ hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.