Modulation of Nucleation and Growth Kinetics of Perovskite Nanocrystals Enables Efficient and Spectrally Stable Pure-Red Light-Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) based on CsPb(Br/I)3 nanocrystals (NCs) usually suffer from severe spectral instability under operating voltage due to the poor-quality PeNCs. Herein, zeolite was utilized to prepare high-quality CsPb(Br/I)3 NCs via promoting the homogeneous nucleation and growth and suppressing the Ostwald ripening of PeNCs. In addition, the decomposed zeolite interacted strongly with PeNCs through Pb-O bonds and hydrogen bonds, which inhibited the formation of defects and suppressed halide ion migration, leading to an improved photoluminescence quantum yield (PLQY) and enhanced stability of PeNCs. Moreover, the strong binding affinity of decomposed zeolite to PeNCs contributed to the formation of homogeneous perovskite films with high PLQY. As a result, pure-red PeLEDs with Commission International de I'Eclairage (CIE) coordinates of (0.705, 0.291) were fabricated, approaching the Rec. 2020 red primary color. The devices achieved a peak external quantum efficiency of 23.0% and outstanding spectral stability.

Charge Injection and Auger Recombination Modulation for Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes

The inefficient charge transport and large exciton binding energy of quasi-2D perovskites pose challenges to the emission efficiency and roll-off issues for perovskite light-emitting diodes (PeLEDs) despite excellent stability compared to 3D counterparts. Herein, alkyldiammonium cations with different molecular sizes, namely 1,4-butanediamine (BDA), 1,6-hexanediamine (HDA) and 1,8-octanediamine (ODA), are employed into quasi-2D perovskites, to simultaneously modulate the injection efficiency and recombination dynamics. The size increase of the bulky cation leads to increased excitonic recombination and also larger Auger recombination rate. Besides, the larger size assists the formation of randomly distributed 2D perovskite nanoplates, which results in less efficient injection and deteriorates the electroluminescent performance. Moderate exciton binding energy, suppressed 2D phases and balanced carrier injection of HDA-based PeLEDs contribute to a peak external quantum efficiency of 21.9%, among the highest in quasi-2D perovskite based near-infrared devices. Besides, the HDA-PeLED shows an ultralong operational half-lifetime T50 up to 479 h at 20 mA cm‒2, and sustains the initial performance after a record-level 30 000 cycles of ON-OFF switching, attributed to the suppressed migration of iodide anions into adjacent layers and the electrochemical reaction in HDA-PeLEDs. This work provides a potential direction of cation design for efficient and stable quasi-2D-PeLEDs.

Eliminating the Adverse Impact of Composition Modulation in Perovskite Light-Emitting Diodes toward Ultra-High Brightness and Stability

Excess ammonium halides as composition additives are widely employed in perovskite light-emitting diodes (PeLEDs), aiming to achieve high performance by controlling crystallinity and passivating defects. However, an in-depth understanding of whether excess organoammonium components affect the film physical/electrical properties and the resultant device instability is still lacking. Here, the trade-off between the performance and stability in high-efficiency formamidinium lead iodide (FAPbI3)-based PeLEDs with excess ammonium halides is pointed, and the underlying mechanism is explored. Systematic experimental and theoretical studies reveal that excess halide salt-induced ion-doping largely alters the PeLEDs properties (e.g., carrier injection, field-dependent ion-drifting, defect physics, and phase stability). A surface clean assisted cross-linking strategy is demonstrated to eliminate the adverse impact of composition modulation and boost the operational stability without sacrificing the efficiency, achieving a high efficiency of 23.6%, a high radiance of 964 W sr-1 m-2 (The highest value for FAPbI3 based PeLEDs), and a prolong lifetime of 106.1 h at large direct current density (100 mA cm-2), concurrently. The findings uncovered an important link between excess halide salts and the device performance, providing a guideline for rational design of stable, bright, and high efficiency PeLEDs.

Stable and Efficient Mixed-halide Perovskite LEDs

Tailoring bandgap by mixed-halide strategy in perovskites has attracted extraordinary attention due to the flexibility of halide ion combinations and has emerged as the most direct and effective approach to precisely tune the emission wavelength throughout the entire visible light spectrum. Mixed-halide perovskites, yet, still suffered from several problems, particularly phase segregation under external stimuli because of ions migration. Understanding the essential cause and finding sound strategies, thus, remains a challenge for stable and efficient mixed-halide perovskite light-emitting diodes (PeLEDs). The review herein presents an overview of the diverse application scenarios and the profound significance associated with mixed-halide perovskites. We then summarize the challenges and potential research directions toward developing high stable and efficient mixed-halide PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of mixed-halide perovskite materials and resulting PeLEDs.

Ordered Perovskite Structure with Functional Units for High Performance and Stable Solar Cells

Ion migration is one of the most critical challenges that affects the stability of metal-halide perovskite solar cells (PSCs). However, the current arsenal of available strategies for solving this issue is limited. Here, novel perovskite active layers following the concept of ordered structures with functional units (OSFU) to intrinsically suppress ion migration, in which a three-dimensional (3D) perovskite layer is deposited by vapor deposition for light absorption and a 2D layer is deposited by solution process for ion inhibition, are constructed. As a promising result, the activation energy of ion migration increases from 0.36 eV for the conventional perovskite to 0.54 eV for the OSFU perovskite. These devices exhibit substantially enhanced operational stability in comparison with the conventional ones, retaining >85% of their initial efficiencies after 1200 h under ISOS-L-1. Moreover, the OSFU devices show negligible fatigue behavior with a robust performance under light/dark cycling aging test (ISOS-LC-1 protocol), which demonstrates the promising application of functional motif theory in this field.

Conjugated Phosphonic Acids Enable Robust Hole Transport Layers for Efficient and Intrinsically Stable Perovskite Solar Cells

High efficiency and long-term stability are the prerequisites for the commercialization of perovskite solar cells (PSCs). However, inadequate and non-uniform doping of hole transport layers (HTLs) still limits the efficiency improvements, while the intrinsic instability of HTLs caused by ion migration and accumulation is difficult to be addressed by external encapsulation. Here it is shown that the addition of a conjugated phosphonic acid (CPA) to the Spiro-OMeTAD benchmark HTL can greatly enhance the device efficiency and intrinsic stability. Featuring an optimal diprotic-acid structure, indolo(3,2-b)carbazole-5,11-diylbis(butane-4,1-diyl) bis(phosphonic acid) (BCZ) is developed to promote morphological uniformity and mitigate ion migration across both perovskite/HTL and HTL/Ag interfaces, leading to superior charge conductivity, reinforced ion immobilization, and remarkable film stability. The dramatically improved interfacial charge collection endows BCZ-based n-i-p PSCs with a champion power conversion efficiency of 24.51%. More encouragingly, the BCZ-based devices demonstrate remarkable stability under harsh environmental conditions by retaining 90% of initial efficiency after 3000 h in air storage. This work paves the way for further developing robust organic HTLs for optoelectronic devices.

Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration

Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI3 FETs arises not only from the oxidation of Sn2+ but also from the migration of FA+ ions. The formation of hydrogen bonding between FA+ and F- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm2 V-1 s-1 with an Ion/off ratio of 107 is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.

Kornblum Oxidation Reaction-Induced Collective Transformation of Lead Polyhalides for Stable Perovskite Photovoltaics

The iodide vacancy defects generated during the perovskite crystallization process are a common issue that limits the efficiency and stability of perovskite solar cells (PSCs). Although excessive ionic iodides have been used to compensate for these vacancies, they are not effective in reducing defects through modulating the perovskite crystallization. Moreover, these iodide ions present in the perovskite films can act as interstitial defects, which are detrimental to the stability of the perovskite. Here, an effective approach to suppress the formation of vacancy defects by manipulating the coordination chemistry of lead polyhalides during perovskite crystallization is demonstrated. To achieve this suppression, an α-iodo ketone is introduced to undergo a process of Kornblum oxidation reaction that releases halide ions. This process induces a rapid collective transformation of lead polyhalides during the nucleation process and significantly reduces iodide vacancy defects. As a result, the ion mobility is decreased by one order of magnitude in perovskite film and the PSC achieves significantly improved thermal stability, maintaining 82% of its initial power conversion efficiency at 85 °C for 2800 h. These findings highlight the potential of halide ions released by the Kornblum oxidation reaction, which can be widely used for achieving high-performance perovskite optoelectronics.

Suppressing Ion Migration by Synergistic Engineering of Anion and Cation toward High-Performance Inverted Perovskite Solar Cells and Modules

Ion migration-induced intrinsic instability and large-area fabrication pose a tough challenge for the commercial deployment of perovskite photovoltaics. Herein, an interface heterojunction and metal electrode stabilization strategy is developed by suppressing ion migration via managing lead-based imperfections. After screening a series of cations and nonhalide anions, the ideal organic salt molecule dimethylammonium trifluoroacetate (DMATFA) consisting of dimethylammonium (DMA+) cation and trifluoroacetate (TFA-) anion is selected to manipulate the surface of perovskite films. DMA+ enables the conversion of active excess and/or unreacted PbI2 into stable new phase DMAPbI3, inhibiting photodecomposition of PbI2 and ion migration. Meanwhile, TFA- can suppress iodide ion migration through passivating undercoordinated Pb2+ and/or iodide vacancies. DMA+ and TFA- synergistically stabilize the heterojunction interface and silver electrode. The DMATFA-treated inverted perovskite solar cells and modules achieve a maximum efficiency of 25.03% (certified 24.65%, 0.1 cm2) and 20.58% (63.74 cm2), respectively, which is the record efficiency ever reported for the devices based on vacuum flash evaporation technology. The DMATFA modification results in outstanding operational stability, as evidenced by maintaining 91% of its original efficiency after 1520 h of maximum power point continuous tracking.

The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites

Grain boundaries (GBs) have a significant role in polycrystalline perovskite solar cells (PSCs). However, there is ongoing debate regarding the impact of GBs on the performance and long-term stability of PSCs. Employing the first-principles molecular dynamics for perovskites, the iodine vacancy defect migrations both in bulk and at GBs are investigated. i) The positive iodine vacancy (VI +) is found that have both lower formation energy (1.4 eV) and activation energy (0.18 eV) than those of neutral iodine vacancy (VI), statistically. It indicated the VI + acts as the dominant migrated iodine vacancy rather than VI; ii) the iodine vacancy at GBs has ≈0.48 eV higher activation energy than those in bulk, which leads to the accumulation of iodine vacancy at GBs; iii) the presence of VI + result in a 3-fold increase in charge recombination ratio at GBs, compared to pristine PSCs. Based on quantum molecular dynamics statistical results, which are consistent with experimental measurements, insights into iodine vacancy migration both at GBs and in the bulk are gained. This understanding can be valuable for defects engineering related to ion migration, in order to improve the long-term stability and promote the performance of PSCs.

High-Performance Flat-Panel Perovskite X-ray Detectors Enabled by Defect Passivation in Ruddlesden-Popper Perovskites

Halide perovskites have emerged as promising candidates in X-ray detection due to their strong X-ray absorption and excellent optoelectronic properties. The development of sensitive and stable flat-panel X-ray detectors with high resolution is crucial for practical applications. In this paper, we introduce a novel flat-panel X-ray detector that integrates quasi-two-dimensional (2D) Ruddlesden-Popper (RP) perovskite with a pixeled thin film transistor (TFT) backplane. We incorporate 2,5-dibromopyrimidine (DBPM) as an additive to passivate the Lewis acid defects in the quasi-2D RP perovskite. This modification results in suppressed ion migration, improved optoelectronic performance, and enhanced operational stability of the device. Impressively, the activation energy of the RP perovskite increases from 0.96 to 1.35 eV with the DBPM additive. As a result, X-ray detectors exhibit a high sensitivity of ∼13,600 μC Gyair-1 cm-2, a low detection limit of 6.56 nGyair s-1, and excellent operational stability. Moreover, the flat-panel detectors demonstrate a high spatial resolution of 3.7 line pairs per millimeter and excellent X-ray imaging properties under a remarkably low X-ray dose of ∼50 μGyair, which is just half of the X-ray dose typically used in commercial equipment. This study opens new avenues for the development of flat-panel perovskite X-ray detectors with significant potential for various applications.

Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing

Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen-rich SnO2 nanoflowers switching medium, enabled by seed-mediated wet chemistry, to overcome the ion migration issue for enhanced analog in-memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+ ) in the Ag/SnO2 /p++ -Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10-year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired-pulse facilitation, long-term potentiation/depression, and spike-time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in-memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade-offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting-edge neuromorphic applications.

Piezo-Acoustic Resistive Switching Behaviors in High-Performance Organic-Inorganic Hybrid Perovskite Memristors

Memristors are regarded as promising candidates for breaking the problems including high off-chip memory access delays and the hash rate cost of frequent data moving induced by algorithms for data-intensive applications of existing computational systems. Recently, organic-inorganic halide perovskites (OIHPs) have been recognized as exceptionally favorable materials for memristors due to ease of preparation, excellent electrical conductivity, and structural flexibility. However, research on OIHP-based memristors focuses on modulating resistive switching (RS) performance through electric fields, resulting in difficulties in moving away from complex external circuits and wire connections. Here, a multilayer memristor has been constructed with eutectic gallium and indium (EGaIn)/ MAPbI3 /poly(3,4-ethylenedioxythiophene): poly(4-styrenesulphonate) (PEDOT: PSS)/indium tin oxide (ITO) structure, which exhibits reproducible and reliable bipolar RS with low SET/RESET voltages, stable endurance, ultrahigh average ON/OFF ratio, and excellent retention. Importantly, based on ion migration activated by sound-driven piezoelectric effects, the device exhibits a stable acoustic response with an average ON/OFF ratio greater than 103 , thus realizing non-contact, multi-signal, and far-field control in RS modulation. This study provides a single-structure multifunctional memristor as an integrated architecture for sensing, data storage, and computing.

Enhancing the Stability and Efficiency of Inverted Perovskite Solar Cells with a Mixed Ammonium Ligands Passivation Strategy

The perovskite solar cell (PSC), which has achieved efficiencies of more than 26%, is expected to be a promising technology that can alternate silicon-based solar cells. However, the performance of PSCs is still limited due to defects and ion migration that occur at the large number of grain boundaries present in perovskite thin films. In this study, the mixed ammonium ligands passivation strategy (MAPS) is demonstrated, which combines n-octylammonium iodide (OAI) and 1,3-diaminopropane (DAP) can effectively suppress the grain boundary defects and ion migration through grain boundaries by the synergistic effect of OAI and DAP, resulting in improved efficiency and stability of PSCs. It has also been revealed that MAPS not only enhances crystallinity and reduces grain boundaries but also improves charge transport while suppressing charge recombination. The MAPS-based opaque PSC shows the best power conversion efficiency (PCE) of 21.29% with improved open-circuit voltage (VOC ) and fill factor (FF), and retained 84% of its initial PCE after 1900 h at 65 °C in N2 atmosphere. Amazingly, the MAPS-based semi-transparent PSC (STP-PSC) retained 94% of their maximum power (21.00% at around 10% AVT) after 1000 h under 1 sun illumination and MAPS-based perovskite submodule (PSM) achieved a PCE of 19.59%, which is among the highest values reported recently.

Aging CsPbBr3 Nanocrystal Wafer for Ultralow Ionic Migration and Environmental Stability for Direct X-ray Detection

The outstanding photoelectric properties of perovskites demonstrate extreme promise for application in X-ray detection. However, the soft lattice of the perovskite results in severe ionic migration for three-dimensional materials, limiting the operation stability of perovskite X-ray detectors. Although ligand-decorated nanocrystals (NCs) exhibit significantly higher stability than three-dimensional perovskites, defects remaining on the interface of NCs could still trigger halide migration under a high bias due to the incomplete ligand decoration. Furthermore, it is still challenging to realize sufficient thickness of absorption layers based on NCs for X-ray detectors through traditional methods. Herein, we develop a centimeter-size and millimeter-thick wafer based on CsPbBr3 NCs through isostatic pressing for X-ray detectors, in which the interfacial defects of NCs are remedied by CsPb2Br5 during aging of wafer in ambient humidity. The wafer shows outstanding sensitivity (200 μC Gyair-1 cm-2) and ultralow dark current drift (1.78 × 10-8 nA cm-1 s-1 V-1 @ 400 V cm-1). Moreover, it shows storage stability with negligible performance degradation for 60 days in ambient humidity. Thus, aging perovskite NC wafers for X-ray detection holds huge potential for next-generation X-ray imaging plates.

High-Performance and Stable Perovskite X-ray Detection and Imaging Based on a Ti Cathode

High-energy radiation detectors with a good imaging resolution, fast response, and high sensitivity are desired to operate at a high electric field. However, strong ion migration triggered by electrochemical reactions at the interface between a high-potential electrode and an organic-inorganic hybrid perovskite limits the stability of radiation detectors under a high electric field. Herein, we demonstrate that such ion migration could be effectively suppressed in devices with a Ti cathode, even at a high electric field of 50 V mm-1, through time-of-flight secondary-ion mass spectrometry. X-ray photoelectron spectroscopy illustrates that Ti-N bonds formed at the interface of MAPbBr3 perovskite single crystals/Ti electrode effectively inhibit the electrochemical reaction in organic-inorganic hybrid perovskite devices and ultimately improve the operating stability under a high electric field. The device with a Ti electrode reaches a high sensitivity of 96 ± 1 mC Gyair-1 cm-2 and a low detection limit of 2.8 ± 0.3 nGy s-1 under hard X-ray energy.

PbS/CsPbBr3 Heterojunction for Broadband Neuromorphic Vision Sensing

Neuromorphic light sensors with analogue-domain image processing capability hold promise for overcoming the energy efficiency limitations and latency of von Neumann architecture-based vision chips. Recently, metal halide perovskites, with strong light-matter interaction, long carrier diffusion length, and exceptional photoelectric conversion efficiencies, exhibit reconfigurable photoresponsivity due to their intrinsic ion migration effect, which is expected to advance the development of visual sensors. However, suffering from a large bandgap, it is challenging to achieve highly tunable responsivity simultaneously with a wide-spectrum response in perovskites, which will significantly enhance the image recognition accuracy through the machine learning algorithm. Herein, we demonstrate a broadband neuromorphic visual sensor from visible (Vis) to near-infrared (NIR) by coupling all-inorganic metal halide perovskites (CsPbBr3) with narrow-bandgap lead sulfide (PbS). The PbS/CsPbBr3 heterostructure is composed of high-quality single crystals of PbS and CsPbBr3. Interestingly, the ion migration of CsPbBr3 with the implementation of an electric field induces the energy band dynamic bending at the interface of the PbS/CsPbBr3 heterojunction, leading to reversible, multilevel, and linearly tunable photoresponsivity. Furthermore, the reconfigurable and broadband photoresponse in the PbS/CsPbBr3 heterojunction allows convolutional neuronal network processing for pattern recognition and edge enhancements from the Vis to the NIR waveband, suggesting the great potential of the PbS/CsPbBr3 heterostructure in artificial intelligent vision sensing.

Polycrystalline Lead-Free Perovskite Direct X-Ray Detectors with High Durability and Low Limit of Detection via Low-Temperature Coating

Direct X-ray detectors represent a transformative technology in the realm of radiography and imaging. The double halide-based perovskite cesium silver bismuth bromide (Cs2AgBiBr6) has emerged as a promising material for use in direct X-ray imaging, owing to its nontoxic composition, strong X-ray absorption, decent charge mobility lifetime product (μτ), and low-cost preparation. However, formidable issues related to scalability and ion migration, stemming from intrinsic factors such as halogen vacancies and grain boundaries, have presented significant impediments. These issues have been associated with substantial noise, baseline instability, and a curtailment of detection performance. In response to these multifaceted challenges, we propose a slurry-based in situ treatment technique for fabricating robust Cs2AgBiBr6 thick films. This novel approach adeptly mitigates halogen vacancies, actively passivates grain boundaries, and concurrently elevates the ion migration activation energy, thus effectively suppressing ion migration. Consequently, the obtained X-ray detector exhibits excellent operating stability with minimal signal drift of 8.5 × 10-9 nA cm-1 s-1 V-1 and achieves a remarkable 385% increase in sensitivity with a limit of detection as low as 7.8 nGyair s-1. These results mark a significant step toward the development of high-performance and long-lasting lead-free perovskite direct X-ray detectors.

Strain Regulation and Defect Passivation of FA-Based Perovskite Materials for Highly Efficient Solar Cells

Formamidine lead triiodide (FAPbI3 ) perovskites have attracted increasing interest for photovoltaics attributed to the optimal bandgap, high thermal stability, and the record power conversion efficiency (PCE). However, the materials still face several key challenges, such as phase transition, lattice defects, and ion migration. Therefore, external ions (e.g., cesium ions (Cs+ )) are usually introduced to promote the crystallization and enhance the phase stability. Nevertheless, the doping of Cs+ into the A-site easily leads to lattice compressive strain and the formation of pinholes. Herein, trioctylphosphine oxide (TOPO) is introduced into the precursor to provide tensile strain outside the perovskite lattice through intermolecular forces. The special strain compensation strategy further improves the crystallization of perovskite and inhibits the ion migration. Moreover, the TOPO molecule significantly passivates grain boundaries and undercoordinated Pb2+ defects via the forming of P═O─Pb bond. As a result, the target solar cell devices with the synergistic effect of Cs+ and TOPO additives have achieved a significantly improved PCE of 22.71% and a high open-circuit voltage of 1.16 V (voltage deficit of 0.36 V), with superior stability under light exposure, heat, or humidity conditions.

Self-Healing Behavior of the Metal Halide Perovskites and Photovoltaics

Perovskite solar cells have achieved rapid progress in the new-generation photovoltaic field, but the commercialization lags behind owing to the device stability issue under operational conditions. Ultimately, the instability issue is attributed to the soft lattice of ionic perovskite crystal. In brief, metal halide perovskite materials are susceptible to structural instability processes, including phase segregation, component loss, lattice distortion, and fatigue failure under harsh external stimuli such as high humidity, strong irradiation, wide thermal cycles, and large stress. Developing self-healing perovskites to further improve the unsatisfactory operational stability of their photoelectric devices under harsh stimuli has become a cutting-edge hotspot in this field. This self-healing behavior needs to be studied more comprehensively. Therefore, the self-healing behavior of the metal halide perovskites and photovoltaics is classified and summarized in this review. By discussing recent advances, underlying mechanisms, strategies, and existing challenges, this review provides perspectives on self-healing of perovskite solar cells in the future.

Halide Perovskites and Their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications

The past decade has witnessed a rapid rise in the performance of optoelectronic devices based on lead-halide perovskites (LHPs). The large mobility-lifetime products and defect tolerance of these materials, essential for optoelectronics, also make them well-suited for radiation detectors, especially given the heavy elements present, which is essential for strong X-ray and γ-ray attenuation. Over the past decade, LHP thick films, wafers, and single crystals have given rise to direct radiation detectors that have outperformed incumbent technologies in terms of sensitivity (reported values up to 3.5 × 106 µC Gyair -1 cm-2 ), limit of detection (directly measured values down to 1.5 nGyair s-1 ), along with competitive energy and imaging resolution at room temperature. At the same time, lead-free perovskite-inspired materials (e.g., methylammonium bismuth iodide), which have underperformed in solar cells, have recently matched and, in some areas (e.g., in polarization stability), surpassed the performance of LHP detectors. These advances open up opportunities to achieve devices for safer medical imaging, as well as more effective non-invasive analysis for security, nuclear safety, or product inspection applications. Herein, the principles behind the rapid rises in performance of LHP and perovskite-inspired material detectors, and how their properties and performance link with critical applications in non-invasive diagnostics are discussed. The key strategies to engineer the performance of these materials, and the important challenges to overcome to commercialize these new technologies are also discussed.

Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells

In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.

Ferrocene Derivatives for Improving the Efficiency and Stability of MA-Free Perovskite Solar Cells from the Perspective of Inhibiting Ion Migration and Releasing Film Stress

Further improvement of the performance and stability of inverted perovskite solar cells (PSCs) is necessary for commercialization. Here, ferrocene derivative dibenzoylferrocene (DBzFe) is used as an additive to enhance the performance and stability of MA- and Br- free PSCs. The results show that the introduction of DBzFe not only passivates the defects in the film but also inhibits the ion migration in the film. The final device achieves a power conversion efficiency (PCE) of 23.53%, which is one of the highest efficiencies currently based on self-assembled monolayers (SAMs). Moreover, it maintains more than 96.4% of the original efficiency when running continuously for 400 h at the maximum power point.

Fluorine Passivation Inhibits "Particle Talking" Behaviors under Thermal and Electrical Conditions of Pure Blue Mixed Halide Perovskite Nanocrystals

Owing to outstanding optoelectronic properties, lead halide perovskite nanocrystals (PNCs) are considered promising emitters for next-generation displays. However, the development of pure blue (460-470 nm) perovskite nanocrystal light-emitting diodes (PNC-LEDs), which correspond to the requirements of Rec. 2020 standard, lag far behind that of their green and red counterparts. Here, pure blue CsPb(Br/Cl)3 nanocrystals with remarkable optical performance are demonstrated by a facile fluorine passivation strategy. Prominently, the fluorine passivation on halide vacancies and strong bonding of Pb-F intensely enhance crystal structure stability and inhibit "particle talking" behaviors under both thermal and electrical conditions. Fluorine-based PNCs with high resistance of luminescence thermal quenching retain 70% of photoluminescent intensity when heated to 343 K, which can be attributed to the elevated activation energy for carrier trapping and unchanged grain size. Fluorine-based PNC-LEDs also exhibit stable pure blue electroluminescence (EL) emission with sevenfold promoted luminance and external quantum efficiencies (EQEs), where the suppression of ion migration is further evidenced by a lateral structure device with applied polarizing potential.

Ultrasensitive and Robust CsPbBr3 Single-Crystal X-ray Detectors Based on Interface Engineering

Halide lead perovskites have shown great development in recent years for ionizing radiation detection. However, the bias-induced interfacial electrochemical reaction between the perovskite and electrode severely deteriorates detector performance. We report that BCP strongly interacts with Al and constructs a stable Al-BCP chelating interface, resulting in the suppression of a detrimental electrochemical reaction. The fabricated Au/Al/BCP/C60/CsPbBr3/Au detector shows a low dark current of 3 nA with a stable baseline at an extremely high bias of 100 V (∼100 V mm-1). The superior high-bias stability enables a high sensitivity of 7.3 × 104 μC Gyair-1 cm-2 at 100 V. Meanwhile, a low detection limit of 15 nGyair s-1 at 40 V is achieved due to the reduced noise. The outstanding performance of our device exceeds that of most advanced detectors based on CsPbBr3 single crystals. Besides, X-ray imaging with 1 mm spatial resolution is well demonstrated at a low dose rate of 200 nGyair s-1. The interfacial chelating strategy overcomes the technical limitation of bias-induced instability of perovskite radiation detectors and can be anticipated to operate under an extremely high electrical field.

Direct Observation of Contact Reaction Induced Ion Migration and its Effect on Non-Ideal Charge Transport in Lead Triiodide Perovskite Field-Effect Transistors

The migration of ionic defects and electrochemical reactions with metal electrodes remains one of the most important research challenges for organometal halide perovskite optoelectronic devices. There is still a lack of understanding of how the formation of mobile ionic defects impact charge carrier transport and operational device stability, particularly in perovskite field-effect transistors (FETs), which tend to exhibit anomalous device characteristics. Here, the evolution of the n-type FET characteristics of one of the most widely studied materials, Cs0.05 FA0.17 MA0.78 PbI3, is investigated during repeated measurement cycles as a function of different metal source-drain contacts and precursor stoichiometry. The channel current increases for high work function metals and decreases for low work function metals when multiple cycles of transfer characteristics are measured. The cycling behavior is also sensitive to the precursor stoichiometry. These metal/stoichiometry-dependent device non-idealities are correlated with the quenching of photoluminescence near the positively biased electrode. Based on elemental analysis using electron microscopy the observations can be understood by an n-type doping effect of metallic ions that are created by an electrochemical interaction at the metal-semiconductor interface and migrate into the channel. The findings improve the understanding of ion migration, contact reactions, and the origin of non-idealities in lead triiodide perovskite FETs.

Mitigating Ion Migration with an Ultrathin Self-Assembled Ionic Insulating Layer Affords Efficient and Stable Wide-Bandgap Inverted Perovskite Solar Cells

Wide-bandgap perovskite solar cells (PSCs) are attracting increasing attention because they play an irreplaceable role in tandem solar cells. Nevertheless, wide-bandgap PSCs suffer large open-circuit voltage (VOC ) loss and instability due to photoinduced halide segregation, significantly limiting their application. Herein, a bile salt (sodium glycochenodeoxycholate, GCDC, a natural product), is used to construct an ultrathin self-assembled ionic insulating layer firmly coating the perovskite film, which suppresses halide phase separation, reduces VOC loss, and improves device stability. As a result, 1.68 eV wide-bandgap devices with an inverted structure deliver a VOC of 1.20 V with an efficiency of 20.38%. The unencapsulated GCDC-treated devices are considerably more stable than the control devices, retaining 92% of their initial efficiency after 1392 h storage under ambient conditions and retaining 93% after heating at 65 °C for 1128 h in an N2 atmosphere. This strategy of mitigating ion migration via anchoring a nonconductive layer provides a simple approach to achieving efficient and stable wide-bandgap PSCs.

Hydrochromic Perovskite System with Reversible Blue-Green Color for Advanced Anti-Counterfeiting

The intrinsic instability of halide perovskites toward to external stimulus, has created a competitive advantage for designing stimuli-responsive materials. However, the external environment tuning reversibly fluorescence emission of perovskite system is still limited. In this work, humidity is verified to act as a new option to modulate the emission properties of mixed-halide perovskite. The perovskite nanocrystals (PNCs) photoirradiated in dichloromethane are easily and stably redispersed in water, and emit bright fluorescence which is quite different from the original. Moreover, the perovskites confined on glass slide can reversibly switch their fluorescence between blue and green colors under moisture. It is demonstrated that the factors of different solubilities of CsCl and CsBr in water, the structural transformation of perovskites and the confine of glass matrix play key roles in the reversible transformation. Finally, the combination of hydrochromic CsPb(Brx Cly )3 and water-resistant CsPb(Brx Cly )3 -polymethyl methacrylate have been applied in advanced anti-counterfeiting, which greatly improves the information security. This work not only give an insight into the effects of humidity on fluorescence and structures of PNCs, but also offer a new class of hydrochromic PNCs materials based on reversible emission transformation for potential application in sensors, anti-counterfeiting and information encryption.

Multiple-ion Management of Perovskites by Regulating Spatial Distribution of Hydroxyls in Oligosaccharides

Suppressing migrations of intrinsic and extrinsic ions (e.g., Pb2+ , I- , FA+ /MA+ , and Li+ ) in organic-inorganic hybrid perovskites is critical for alleviating the hysteresis and degradation of perovskite solar cells (PSCs). However, various additives reported for that purpose usually interact with one or two types of those ions, not inhibiting multiple-ion migrations simultaneously. Two oligosaccharides (β-cyclodextrin (β-CD) and maltotetraose (G4)), containing 14 hydroxyls (-OH) with different spatial distributions, for the suppression of multiple-ion migrations in PSCs is herein employed. Compared to linear arrangement of -OH in G4, annular distribution of -OH around wide and narrow rims of β-CD can form supramolecular multi-site interactions in a focal manner with various ions, more effectively capturing and immobilizing these migrated ions. With this multiple-ion management strategy, β-CD-based PSCs exhibit an impressive efficiency of 24.22% with negligible hysteresis and excellent device stability. This work highlights the significances of multi-site interactions and molecular configuration of the additive for inhibiting multi-ion migrations in PSCs.

Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

For the CH3NH3PbI3-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivation method is developed to reduce GBs of the CH3NH3PbI3 film and improve the switching uniformity of the memristor. The crystal grain size of CH3NH3PbI3 increases with the addition of PAN, and the corresponding number of GBs is consequently reduced. The fluctuations of the RS parameters of the memristor device are significantly reduced. With the memristor, nonvolatile image sensing, image memory, and image Boolean operations are demonstrated. This work proposes a strategy for developing high-performance CH3NH3PbI3 optoelectronic memristors.

Ionic Field Screening in MAPbBr3 Crystals Revealed from Remnant Sensitivity in X-ray Detection

Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr₃) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times.

Photo- and Thermal-Induced Ion Migration and Phase Separation in Mn-Doped Two-Dimensional PEA2PbX4 Perovskite

Ion migration and phase separation in perovskite materials have negatively affected the solid-state lighting and display. Studying photo- and thermal-induced degradation is considered as a promising approach to understanding the luminescence mechanism and promoting practical applications. Herein, the Mn-doped two-dimensional PEA₂PbX₄ (X = Cl, Br, I) microcrystals with changing halogen composition were synthesized by an acid-assisted post-processing strategy. Then, photo- and thermal-induced degradation was studied by using steady-state and time-resolved photoluminescence (PL) spectroscopy. The band edge exciton PL peak of Mn-doped 2D PEA₂PbX₄ microcrystals was adjusted from 397 to 500 nm. The reduced Mn PL lifetime (1.37 to 0.21 ms) was monitored under ion exchange from Cl to Br to I. The degradation mechanism could be divided into two cases: (i) The halide ion migration in Mn-doped 2D perovskite under continuous illumination was revealed, suggesting that the migration of Cl ions was more accessible than that of Br and I. (ii) The PL redshift and lifetime reduction were observed after annealing at 420 K, which means that thermally induced aggregation of Mn ions resulted in the formation of Mn²⁺-Mn²⁺ dimers. In addition, the experimental results indicated that the induced B-site phase separation at high temperature annealing made the mixed perovskite phase of Pb and Mn ultimately transform into pure PEA₂PbBr₄ and PEA₂MnBr₄.

Modification of Two-Dimensional Tin-Based Perovskites by Pentanoic Acid for Improved Performance of Field-Effect Transistors

Understanding and controlling the nucleation and crystallization in solution-processed perovskite thin films are critical to achieving high in-plane charge carrier transport in field-effect transistors (FETs). This work demonstrates a simple and effective additive engineering strategy using pentanoic acid (PA). Here, PA is introduced to both modulate the crystallization process and improve the charge carrier transport in 2D 2-thiopheneethylammonium tin iodide ((TEA)₂ SnI₄ ) perovskite FETs. It is revealed that the carboxylic group of PA is strongly coordinated to the spacer cation TEAI and [SnI₆ ]^4- framework in the perovskite precursor solution, inducing heterogeneous nucleation and lowering undesired oxidation of Sn²⁺ during the film formation. These factors contribute to a reduced defect density and improved film morphology, including lower surface roughness and larger grain size, resulting in overall enhanced transistor performance. The reduced defect density and decreased ion migration lead to a higher p-channel charge carrier mobility of 0.7 cm² V^-1 s^-1 , which is more than a threefold increase compared with the control device. Temperature-dependent charge transport studies demonstrate a mobility of 2.3 cm² V^-1 s^-1 at 100 K due to the diminished ion mobility at low temperatures. This result illustrates that the additive strategy bears great potential to realize high-performance Sn-based perovskite FETs.

Integrated Moist-Thermoelectric Generator for Efficient Waste Steam Energy Utilization

Industrial waste steam is one of the major sources of global energy losses. Therefore, the collection and conversion of waste steam energy into electricity have aroused great interest. Here, a "two-in-one" strategy is reported that combines thermoelectric and moist-electric generation mechanisms for a highly efficient flexible moist-thermoelectric generator (MTEG). The spontaneous adsorption of water molecules and heat in the polyelectrolyte membrane induces the fast dissociation and diffusion of Na⁺ and H⁺ , resulting in the high electricity generation. Thus, the assembled flexible MTEG generates power with a high open-circuit voltage (V_oc ) of 1.81 V (effective area = 1cm² ) and a power density of up to 4.75±0.4 µW cm^-2 . With efficient integration, a 12-unit MTEG can produce a V_oc of 15.97 V, which is superior to most known TEGs and MEGs. The integrated and flexible MTEGs reported herein provide new insights for harvesting energy from industrial waste steam.

A Three-Dimensional Neuromorphic Photosensor Array for Nonvolatile In-Sensor Computing

In-sensor computing hardware based on emerging reconfigurable photosensors can effectively reduce redundant data and decrease power consumption, which can greatly promote the evolution of machine vision. However, because of the complex device structures and low integration abilities, the common architectures mainly lie in two dimensions, resulting in low time and area efficiencies. Here we propose a three-dimensional (3D) neuromorphic photosensor array for parallel in-sensor image processing. It is constructed on a vertical Graphite/CuInP₂S₆/Graphite photosensor unit, where the directional Cu⁺ ion migrations after voltage pulse programming enable a reconfigurable photovoltaic effect and an in-sensor computing capability. With a memristor-like device structure, van der Waals interfaces, and a high uniformity with a low crosstalk problem, a 10 × 10 array is fabricated for intelligent image recognition. Furthermore, using a vertically stacked 3D 3 × 3 × 3 array, we demonstrate an in-sensor convolution strategy with high time and area efficiencies.

Pseudohalogen Resurfaced CsPbBr3 Nanocrystals for Bright, Efficient, and Stable Green-Light-Emitting Diodes

Lead halide perovskite nanocrystals (LHP NCs) are regarded as promising emitters for next-generation ultrahigh-definition displays due to their high color purity and wide color gamut. Recently, the external quantum efficiency (EQE) of LHP NC based light-emitting diodes (PNC LEDs) has been rapidly improved to a level required by practical applications. However, the poor operational stability of the device, caused by halide ion migration at the grain boundary of LHP NC thin films, remains a great challenge. Herein, we report a resurfacing strategy via pseudohalogen ions to mitigate detrimental halide ion migration, aiming to stabilize PNC LEDs. We employ a thiocyanate solution processed post-treatment method to efficiently resurface CsPbBr₃ NCs and demonstrate that the thiocyanate ions can effectively inhibit bromide ion migration in LHP NC thin films. Owing to thiocyanate resurfacing, we fabricated LEDs with a high EQE of 17.3%, a maximum brightness of 48000 cd m^-2, and an excellent operation half-life time.

Eliminating Nanocrystal Surface Light Loss and Ion Migration to Achieve Bright Mixed-Halide Blue Perovskite LEDs

Blue light-emittin g diodes (LEDs) are important components for perovskite electroluminescence applications, which still suffer from insufficient luminescence efficiency and poor stability. In Cl/Br mixed perovskite NCs, surficial defects cause severe light failure and ion migration, the in-depth mechanism of which is also not clear. To gain insights into these issues, we employ the ligand post-addition approach for mixed Cl/Br NCs by using octylammonium hydrobromide (OctBr) ligands, which effectively decrease surficial light loss and block ion migration pathways. The passivated CsPbCl_1.5Br_1.5 NCs exhibit exceptional blue emission with 95% PLQY, and the electroluminescence spectra of LEDs are located at the initial positions at the initial states. The treated NC blue devices show a negligible color shift as the voltage increases, which proves that electric-field-driven ion migration is drastically suppressed. In addition, OctBr-treated CsPbCl_1.5Br_1.5 and CsPbClBr₂ NC LEDs show high external quantum efficiencies of 2.42 and 3.05% for emission peaks at 456 and 480 nm, respectively. Our work identified the nature of NC surface defects and provided a surficial modification approach to develop high-performance and color-stable blue mixed-halide perovskite LEDs.

BiOBr Surface-Functionalized Halide Double-Perovskite Films for Slow Ion Migration and Improved Stability

Surface-tailored lead-free halide double-perovskite (Cs₂AgBiX₆) thin films are utilized for ion migration studies. A thin surface layer of BiOBr/Cl is grown via intentional annealing of the halide films in ambient conditions. Herein, we physically stacked the two films, viz., Cs₂AgBiBr₆ and Cs₂AgBiCl₆, to thermally activate the halide ion migration at different temperatures (room temperature (RT)-150 °C). While annealing, the films' color changes from orange to pale yellow and transparent brown to yellow as a result of the migration of Br^- ions from Cs₂AgBiBr₆ to Cs₂AgBiCl₆ and Cl^- ions from Cs₂AgBiCl₆ to Cs₂AgBiBr₆, respectively. Annealing helps in homogenizing the halide ions throughout the films, consequently leading to a mixed phase, i.e., Cs₂AgBiCl_xBr_6-x/Cs₂AgBiBr_xCl_6-x (x = 0 to 6) formation. The movement of ions is understood by absorption studies performed at regular time intervals. These investigations reveal a redshift (from 366 to 386 nm) and a blueshift (from 435 to 386 nm) in absorption spectra, indicating the migration of Br^- and Cl^- toward Cs₂AgBiCl₆ and Cs₂AgBiBr₆, respectively. The films characterized using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal the presence of a peak at 2θ = 10.90° and binding energy of 158.1 eV, respectively, corresponding to the formation of Bi-O bonds at the film surface. Also, XRD studies show a lower 2θ shift of the diffraction peak in the case of Cs₂AgBiCl₆ films and a higher 2θ shift in the case of Cs₂AgBiB₆ films, which further confirms the migration of Cl^- and Br^- from one film to the other. XPS investigations confirm the compositional change with a gradual increment in the concentration of Br^-/Cl^- with an increase in heating time for Cs₂AgBiCl₆/Cs₂AgBiBr₆ films. All these studies confirm thermal diffusion of halide ions in double-perovskite films. Further, from the exponential decay of the absorption spectra, the rate constant for halide (Br) ion diffusion is calculated, which shows an increment from 1.7 × 10^-6 s^-1 at RT to 12.1 × 10^-3 s^-1 at 150 °C. The temperature-dependent rate constant follows Arrhenius behavior and renders an activation energy of 0.42 eV (0.35 eV) for bromide (chloride) ion mobility. A larger estimated value as compared to the reported values for Cs₂AgBiBr₆ wafers (∼0.20 eV) reveals a slow mobility of halide ions in thin films of Cs₂AgBiBr₆/Cl₆. The formation of a BiOBr passivation layer at the surface of Cs₂AgBiBr₆ thin film might be one of the plausible causes of the slow anion diffusion in the present work. Slow ion migration is an indication that the films are stable and of high-quality.

A Universal Microscopic Patterned Doping Method for Perovskite Enables Ultrafast, Self-Powered, Ultrasmall Perovskite Photodiodes

Novel metal halide perovskite is proven to be a promising optoelectronic material. However, fabricating microscopic perovskite devices is still challenging because the perovskite is soluble with the photoresist, which conflicts with conventional microfabrication technology. The size of presently reported perovskite devices is about 50 µm. Limited by the large size of perovskite optoelectronic devices, they cannot be readily adopted in the fields of imaging, display, etc. Herein a universal microscopic patterned doping method is proposed, which can realize microscale perovskite devices. Rather than by the conventional doping method, in this study the local Fermi level of perovskite is modulated by the redistributing intrinsic ion defects via a polling voltage. A satisfactorily stable polarized ion distribution can be achieved by optimization of the perovskite material and polling voltage, resulting in ultrafast (40 µs), self-powered microscale (2 µm) photodiodes. This work sheds light on a route to fabricate integrated perovskite optoelectronic chips.

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81 Fe19 /CuOx /TaN Heterostructure

The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin-orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni₈₁ Fe₁₉ /CuO_x /TaN heterostructures with various CuO_x oxidization concentrations. The ionic liquid gating induces the migration of oxygen ions, which modulates the oxygen concentration at the Ni₈₁ Fe₁₉ /CuO_x interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuO_x layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin-orbitronic devices through ionic engineering.

Enhancement of Amplified Spontaneous Emission by Electric Field in CsPbBr3 Perovskites

Perovskite gain materials can sustain continuous-wave lasing at room-temperature. A first step toward the unachieved goal of electrically excited lasing would be an improvement in gain when electrical stimulation is added to the optical. However, to date, electrical stimulation supplementing optical has reduced gain performance. We find that amplified spontaneous emission (ASE) in a CsPbBr₃ perovskite light-emitting diode (LED) held under invariant subthreshold optical excitation can be turned on/off by the addition/removal of an electric field. A positive bias voltage leads to a factor of 3 reduction in the optical ASE threshold, the cause of which can be attributed to an enhancement of the radiative rate. The slow components (10 s time scale) of the modulation in the photoluminescence and ASE when the voltage is changed suggest that the relocation of mobile ions trigger the increased radiative rate and observed lowering of ASE thresholds.

Amyloid-Gold Nanoparticle Hybrids for Biocompatible Memristive Devices

Biomolecular materials offer tremendous potential for the development of memristive devices due to their low cost of production, environmental friendliness, and, most notably, biocompatibility. Herein, biocompatible memristive devices based on amyloid-gold nanoparticle hybrids have been investigated. These memristors demonstrate excellent electrical performance, featuring an ultrahigh R_off/R_on ratio (>10⁷), a low switching voltage (<0.8 V), and reliable reproducibility. Additionally, the reversible transition from threshold switching to resistive switching mode was achieved in this work. The arrangement of peptides in amyloid fibrils endows the surface polarity and phenylalanine packing, which provides channels for the migration of Ag ions in the memristors. By modulating voltage pulse signals, the study successfully imitates the synaptic behavior of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP). More interestingly, Boolean logic standard cells were designed and simulated using the memristive devices. The fundamental and experimental results of this study thus offer insights into the utilization of biomolecular materials for advanced memristive devices.

Metallographic Mechanism of Embrittlement of 15 μm Ultrafine Quaternary Silver Alloy Bonding Wire in Chloride Ions Environment

Chloride ions contained in the sealing compound currently used in the electronic packaging industry not only interact with intermetallic compounds but also have a serious impact on silver alloy wires. A 15 μm ultrafine quaternary silver-palladium-gold-platinum alloy wire was used in this study. The wire and its bonding were immersed in a 60 °C saturated sodium chloride solution (chlorination experiment), and the strength and elongation before and after chlorination were measured. Finally, the fracture surface and cross-section characteristics were observed using a scanning electron microscope and focused ion microscope. The results revealed that chloride ions invade the wire along the grain boundary, and chlorides have been generated inside the cracks to weaken the strength and elongation of the wire. In addition, chloride ions invade the interface of the wire bonding to erode the aluminum substrate after immersing it for enough long time, causing galvanic corrosion, which in turn causes the bonding joint to separate from the aluminum substrate.

Bulk Heterostructure BA2PbI4/MAPbI3 Perovskites for Suppressed Ion Migration To Achieve Sensitive X-ray Detection Performance

Three-dimensional (3D) lead-halide perovskites with outstanding mobility-lifetime products and large attenuation coefficients for X-ray photons have demonstrated highly sensitive X-ray detection. However, there exists severe ion migration, especially under electrical bias, that results in dark-current drift and poorer device stability. Theoretical analyses suggest that 3D perovskites with two-dimensional (2D) perovskites may mitigate ion migration and reduce the dark current to achieve a drastically lower detection limit, which is badly needed for X-ray diagnostics. A bulk 2D/3D perovskite heterostructure is therefore designed and prepared by hot-pressing a mixture of BA₂PbI₄ and MAPbI₃ particles. Compared with the pure MAPbI₃ pellet, the bulk 2D/3D heterostructure pellet shows much higher resistivity, hence, significantly reduced ion migration and a much smaller dark-current drift of 4.84 × 10^-5 nA cm^-1 s^-1 V^-1, which is much lower than that of the pristine MAPbI₃ pellet, thus demonstrating its effectiveness for the suppression of ion migration. The bulk 2D/3D heterostructure pellet attains an X-ray sensitivity of 2.0 × 10³ μC Gy_air^-1 cm^-2 as well as a lower detection limit of 111.76 nGy s^-1 under 10 V bias. This work provides a successful strategy to prepare X-ray detectors with suppressed ion migration and negligible dark current drift, which will further benefit the development of lead-halide perovskite X-ray detectors.

Chemical and mechanical interfacial degradation in bifacial glass/glass and glass/transparent backsheet photovoltaic modules

Glass/glass (G/G) photovoltaic modules are quickly rising in popularity, but the durability of modern G/G packaging has not yet been established. In this work, we examine the interfacial degradation modes in G/G and glass/transparent backsheet modules under damp heat (DH) with and without system bias voltage, comparing emerging polyolefin elastomer (POE) and industry-standard poly(ethylene-co-vinyl acetate) (EVA) encapsulants. We investigate the transport of ionic species at cell/encapsulant interfaces, demonstrating that POE limits both sodium and silver ion migration compared with EVA. Changes to the chemical structures of the encapsulants at the cell/encapsulant interfaces demonstrate that both POE and EVA are more susceptible to degradation in modules with a transparent backsheet than in the G/G configuration. Adhesion testing reveals that POE and EVA have comparable critical debond energies after the DH exposures regardless of system bias polarity. The results of this study indicate that the interfacial degradation mechanisms of G/G appear to be similar to those of conventional glass/backsheet modules. For emerging materials, our results demonstrate that POE offers advantages over EVA but that transparent backsheets may accelerate encapsulant degradation due to increased moisture ingress when compared with the G/G structure.

Manipulating the Migration of Iodine Ions via Reverse-Biasing for Boosting Photovoltaic Performance of Perovskite Solar Cells

Perovskite solar cells (PSCs) are being developed rapidly and exhibit greatly potential commercialization. Herein, it is found that the device performance can be improved by manipulating the migration of iodine ions via reverse-biasing, for example, at -0.4 V for 3 min in dark. Characterizations suggest that reverse bias can increase the charge recombination resistance, improve carrier transport, and enhance built-in electric field. Iodine ions including iodine interstitials in perovskites are confirmed to migrate and accumulate at the SnO₂ /perovskite interface under reverse-basing, which fill iodine vacancies at the interface and interact with SnO₂ . First-principles calculations suggest that the SnO₂ /perovskite interface with less iodine vacancies has a stronger interaction and higher charge transfer, leading to larger built-in electric field and improved charge transport. Iodine ions that may pass through the SnO₂ /perovskite interface are also confirmed to be able to interact with Sn⁴⁺  and passivate oxygen vacancies on the surface of SnO₂ . Consequently, an efficiency of 23.48% with the open-circuit voltage (V_oc ) of 1.16 V is achieved for PSCs with reverse-biasing, as compared with the initial efficiency of 22.13% with a V_oc  of 1.10 V. These results are of great significance to reveal the physics mechanism of PSCs under electric field.

Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors

Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10^-3 mA cm^-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.

Surface Characterization of the Solution-Processed Organic-Inorganic Hybrid Perovskite Thin Films

The surface properties of organic-inorganic hybrid perovskites can strongly affect the efficiency and stability of corresponding devices. Even though different surface passivation methods are developed, the microscopic structures of solution-processed perovskite film surfaces are not systematically studied. This study uses low-temperature scanning tunneling microscopy to study the organic-inorganic hybrid perovskite thin films, MA_0.4 FA_0.6 PbI₃ and MAPbI₃ , synthesized by the spin-coating method. Flat surface structures, atomic steps, and crystal grain boundaries are resolved at an atomic resolution. The surface imperfections are also characterized, as well as the dominant defects. Simulations on different types of iodine vacancy configurations are performed by density functional theory calculations. In addition, it is observed that the surface iodine lattice structure is unstable during scanning. Tip scanning can also cause the vertical migration of surface iodine ions. The measurements provide the direct visualizations of the surface imperfections of the solution-processed perovskite films. They are essential for understanding the surface-related optoelectronic effects and rationally designing more efficient surface passivation methods.

Engineering Electro-Optic BaTiO3 Nanocrystals via Efficient Doping

Electro-optic (EO) modulators provide electrical-to-optical signal conversion relevant to optical communications. Barium titanate (BaTiO₃ ) is a promising material system for EO modulation in light of its optical ultrafast nonlinearity, low optical loss, and high refractive index. To enhance further its spontaneous polarization, BaTiO₃ can be doped at the Ba and Ti sites; however, doping is often accompanied by ion migration, which diminishes EO performance. Here, donor-acceptor doping and its effect on EO efficiency are investigated, finding that La-doped BaTiO₃ achieves an EO coefficient of 42 pm V^-1 at 1 kHz, fully twice that of the pristine specimen; however, it is also observed that, with this single-element doping, the EO response falls off rapidly with frequency. From impedance spectroscopy, it is found that frequency-dependent EO is correlated with ion migration. Density functional theory calculations predict that the ion-migration barrier decreases with La³⁺ doping but can be recovered with further Mn²⁺ doping, a finding that prompts to prevent ion migration by incorporating Mn²⁺ into the Ti-site to compensate for the charge imbalance.

What Can Glow Discharge Optical Emission Spectroscopy (GD-OES) Technique Tell Us about Perovskite Solar Cells?

The emerging broad range of applications of the glow discharge optical emission spectroscopy (GD-OES) technique in the field of perovskite solar cells (PSCs) research is reviewed. It can provide a large palette of information by easily and quickly tracking the depth distribution of light to heavy elements. After a discussion of the advantages and the limitations of the technique and a comparison with other analytical techniques, how GD-OES is employed to give structural information on perovskite solar cells is shown. GD-OES has allowed the full perovskite film formation process investigation, from the initial precursor layers containing soaking and complexed solvent to the final crystallized 3D perovskite layers. The A-site elemental cations distribution is followed-up during the film formation. In addition, this technique gives a deep insight into the action mechanism of additives and their effects on the film formation. It provides fruitful information on optimized light absorbing layers and on the selective contact layers which ensure the charge transport in PSCs. It allows to directly visualize halide ions migration and their blocking by ad-hoc chemical engineering and to study the films and PSCs ageing. GD-OES opens new perspectives to explain the final performances of the devices.