Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.

High-Performance W-Doped Bi0.5Sb1.5Te3 Flexible Thermoelectric Films and Generators

Bi-Sb-Te-based thermoelectric materials have the best room-temperature thermoelectric properties, but their inherent brittleness and rigidity limit their application in the wearable field. In this study, W-doped p-type Bi0.5Sb1.5Te3 (W-BST) thin films were prepared using magnetron sputtering on polyimide substrates to create thermoelectric generators (TEGs). Bending tests showed that the thin film has excellent flexibility and mechanical durability, meeting the flexible requirements of wearable devices. W doping can significantly increase the carrier concentration, Seebeck coefficient, and electrical conductivity of BST thin films. At 300 K, the power factor of the W-BST film is 2.25 times higher than that of the undoped film, reaching 13.75 μW cm-1 K-2. First-principles calculations showed that W doping introduces significant impurity peaks in the bandgap, in which W d electrons remarkably hybridize with the Sb and Te p electrons, leading to an improved electrical conductivity of BST films. Furthermore, W doping significantly reduces the work function of BST films, thereby improving the carrier mobility. A TEG module fabricated from four layers of W-BST thin films achieved a maximum output power density of 6.91 mW cm-2 at a temperature difference of 60 K. Application tests showed that the flexible TEG module could power a portable clock using the temperature difference between body temperature and room temperature. At a medium temperature of 439 K, the assembled TEG module can provide a stable output voltage of 1.51 V to power a LED. This study demonstrates the feasibility of combining inorganic thermoelectric materials with flexible substrates to create high-performance flexible TEGs.

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

Record-High Thermoelectric Performance in Al-Doped ZnO via Anderson Localization of Band Edge States

Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics (P F max = $PF_{\text{max}} =$  21.5 µW cm-1 K-2 andz T max = $zT_{\text{max}} =$  0.5 at 1100 K inZn 0.96 Al 0.04 O ${\rm Zn}_{0.96} {\rm Al}_{0.04}{\rm O}$ ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

Dramatically Enhanced Mechanical Properties of Nano-TiN-Dispersed n-Type Bismuth Telluride by Multi-Effect Modulation

Bismuth telluride (Bi2Te3)-based alloys have been extensively employed in energy harvesting and refrigeration applications for decades. However, commercially produced Bi2Te3-based alloys using the zone-melting (ZM) technique often encounter challenges such as insufficient mechanical properties and susceptibility to cracking, particularly in n-type Bi2Te3-based alloys, which severely limit the application scenarios for bismuth telluride devices. In this work, we seek to enhance the mechanical properties of n-type Bi2Te2.7Se0.3 alloys while preserving their thermoelectrical performance by a mixed mechanism of grain refinement and the TiN composite phase-introduced pinning effect. These nanoscale processes, coupled with the addition of TiN, result in a reduction in grain size. The pinning effects of nano-TiN contribute to increased resistance to crack propagation. Finally, the TiN-dispersed Bi2Te2.7Se0.3 samples demonstrate increased hardness, bending strength and compressive strength, reaching 0.98 GPa, 36.3 MPa and 74 MPa. When compared to the ZM ingots, those represent increments of 181%, 60% and 67%, respectively. Moreover, the thermoelectric performance of the TiN-dispersed Bi2Te2.7Se0.3 samples is identical to the ZM ingots. The samples exhibit a peak dimensionless figure of merit (ZT) value of 0.957 at 375 K, with an average ZT value of 0.89 within the 325-450 K temperature range. This work has significantly enhanced mechanical properties, increasing the adaptability and reliability of bismuth telluride devices for various applications, and the multi-effect modulation of mechanical properties demonstrated in this study can be applied to other thermoelectric material systems.

Effect of Ni Doping on the Thermoelectric Properties of YbCo2Zn20

Thermoelectric devices are both solid-state heat pumps and energy generators. Having a reversible process without moving parts is of high importance for applications in remote locations or under extreme conditions. Yet, most thermoelectric devices have a rather limited energy conversion efficiency due to the natural competition between high electrical conductivity and low thermal conductivity, both being essential conditions for achieving a high energy conversion efficiency. Heavy-fermion compounds YbT2Zn20 (T = Co, Rh, Ir) have been reported to be potential candidate materials for thermoelectric applications at low temperatures. Motivated by this result, we applied chemical substitution studies on the transition metal site in order to optimize the charge carrier concentration as well as promote more efficient phonon scatterings. Here, we present the latest investigation on the Ni-doped specimens YbCo2-xNixZn20, where enhanced thermoelectric figure of merit values have been obtained.

Synthesis and Transport Properties of ZnSnP2-yAsy Chalcopyrite Solid Solutions

This work focuses on the synthesis and properties of quaternary ZnSnP2-yAsy chalcopyrite solid solutions. Full miscibility of the solid solution is achieved using ball milling followed by hot press sintering. The measured electrical conductivity increases substantially with As substitution from 0.03 S cm-1 for ZnSnP2 to 10.3 S cm-1 for ZnSnAs2 at 715 K. Band gaps calculated from the activation energies show a steady decrease with increasing As concentration from 1.4 eV for ZnSnP2 to 0.7 eV for ZnSnAs2. The Seebeck coefficient decreases significantly with As substitution from nearly 1000 μV K-1 for ZnSnP2 to -100 μV K-1 for ZnSnAs2 at 650 K. Thermal conductivity is decreased for the solid solutions due to alloy phonon scattering, compared to the end members with y = 0 and y = 2, with the y = 0.5 and y = 1.0 samples exhibiting the lowest values of 1.4 W m-1 K-1 at 825 K. Figure of merit values are increased for the undoped solid solutions at lower temperatures when compared to the end members due to the decreased thermal conductivity, with the y = 0.5 sample reaching zT = 1.6 × 10-3 and y = 1 reaching 2.1 × 10-3 at 700 K. The largest values of the figure of merit zT for the undoped series was found for y = 2 with zT = 2.8 × 10-3 at 700 K due to the increasing n-type Seebeck coefficient. Boltztrap calculations reveal that p-doping could yield zT values above unity at 800 K in case of ZnSnAs2, comparable with ZnSnP2.

Enhancing Thermoelectric Performance in P-Type Sb2Te3-Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect

P-type Sb2Te3 has been recognized as a potential thermoelectric material for applications in low-medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high-energy ball milling and rapid hot-pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb2Te3, yielding a remarkable ZT value of 0.55 at 323 K due to the donor-like effect. Furthermore, the incorporation of Nb─Ag co-doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb2Te3-based materials attain an impressive range of 0.5-0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb1.97Nb0.03Ag0.005Te3 escalates to 0.92 at 548 K with a record average ZT value (ZTavg) of 0.75 within the temperature range of 323-573 K. These achievements hold promising implications for advancing the viability of V-VI commercialized materials for low-medium temperature application.

Comparative Study of the Orientation and Order Effects on the Thermoelectric Performance of 2D and 3D Perovskites

Calcium titanium oxide has emerged as a highly promising material for optoelectronic devices, with recent studies suggesting its potential for favorable thermoelectric properties. However, current experimental observations indicate a low thermoelectric performance, with a significant gap between these observations and theoretical predictions. Therefore, this study employs a combined approach of experiments and simulations to thoroughly investigate the impact of structural and directional differences on the thermoelectric properties of two-dimensional (2D) and three-dimensional (3D) metal halide perovskites. Two-dimensional (2D) and three-dimensional (3D) metal halide perovskites constitute the focus of examination in this study, where an in-depth exploration of their thermoelectric properties is conducted via a comprehensive methodology incorporating simulations and experimental analyses. The non-equilibrium molecular dynamics simulation (NEMD) was utilized to calculate the thermal conductivity of the perovskite material. Thermal conductivities along both in-plane and out-plane directions of 2D perovskite were computed. The NEMD simulation results show that the thermal conductivity of the 3D perovskite is approximately 0.443 W/mK, while the thermal conductivities of the parallel and vertical oriented 2D perovskites increase with n and range from 0.158 W/mK to 0.215 W/mK and 0.289 W/mK to 0.309 W/mK, respectively. Hence, the thermal conductivity of the 2D perovskites is noticeably lower than the 3D ones. Furthermore, the parallel oriented 2D perovskites exhibit more effective blocking of heat transfer behavior than the perpendicular oriented ones. The experimental results reveal that the Seebeck coefficient of the 2D perovskites reaches 3.79 × 102 µV/K. However, the electrical conductivity of the 2D perovskites is only 4.55 × 10-5 S/cm, which is one order of magnitude lower than that of the 3D perovskites. Consequently, the calculated thermoelectric figure of merit for the 2D perovskites is approximately 1.41 × 10-7, slightly lower than that of the 3D perovskites.

Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study

In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.

Thermoelectric Performance Improvement in the ZrNiSn-Based Composite via Modulating Si Addition

To ensure optimal performance, ZrNiSn is required to possess a low thermal conductivity and exhibit minimal bipolar effects under high-temperature conditions. This study demonstrates the integration of silicon (Si) at different doping levels into ZrNiSn. The composites consist of secondary phases of in situ ZrNiSi and Si. At a temperature of 873 K, the Seebeck coefficient experiences a 16% increase, despite the charge carrier concentration increasing three times as a result of the electron injection from ZrNiSi. The phenomenon can be elucidated by the introduction of Si, which causes energy filtering and inhibits the flow of minority charge carriers. When the doping levels in n- or p-type Si reach high levels (1019 to 1020 cm-3), the mixed interfaces ZrNiSn/ZrNiSi and ZrNiSn/Si reduce the thermal conductivity by 15%, resulting in a 50% increase in zT. These findings indicate that electron transfer in ZrNiSn can be regulated by precise doping in Si. They also demonstrate that incorporating an optimal p-type semiconductor can enhance the thermoelectric performance of n-type ZrNiSn. Additionally, a novel approach is proposed to separate electrical conductivity and the Seebeck coefficient by designing unique secondary phase interfaces.

Ionic Thermoelectric Generators in Vertical and Planar Topologies Based on Fluorinated Polymer Hybrid Materials with Ionic Liquids

Ionic thermoelectrics (TEs), in which voltage generation is based on ion migration, are suitable for applications based on their low cost, high flexibility, high ionic conductivity, and wide range of Seebeck coefficients. This work reports on the development of ionic TE materials based on the poly(vinylidene fluoride-trifluoroethylene), Poly(VDF-co-TrFE), as host polymer blended with different contents of the ionic liquid, IL, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, [EMIM][TFSI]. The morphology, physico-chemical, thermal, mechanical, and electrical properties of the samples are evaluated together with the TE response. It is demonstrated that the IL acts as a nucleating agent for polymer crystallization. The mechanical properties and ionic conductivity values are dependent on the IL content. A high room temperature ionic conductivity of 0.008 S cm-1 is obtained for the sample with 60 wt% of [EMIM][TFSI] IL. The TE properties depend on both IL content and device topology-vertical or planar-the largest generated voltage range being obtained for the planar topology and the sample with 10 wt% of IL content, characterized by a Seebeck coefficient of 1.2 mV K-1 . Based on the obtained maximum power density of 4.9 µW m-2 , these materials are suitable for a new generation of TE devices.

Synergistic Dual Doping of Sulfur and Copper for Improved Thermoelectric Properties of Silver Selenide Nanomaterials

Research on flexible thermoelectric (TE) materials has typically focused on conducting polymers and conducting polymer-based composites. However, achieving TE properties comparable in magnitude to those exhibited by their inorganic counterparts remains a formidable challenge. This study focuses on the synthesis of silver selenide (Ag2 Se) nanomaterials using solvothermal methods and demonstrates a significant enhancement in their TE properties through the synergistic dual doping of sulfur and copper. Flexible TE thin films demonstrating excellent flexibility are successfully fabricated using vacuum filtration and hot-pressing techniques. The resulting thin films also exhibited outstanding TE performance, with a high Seebeck coefficient (S = -138.5 µV K-1 ) and electrical conductivity (σ = 1.19 × 105  S m-1 ). The record power factor of 2296.8 µW m-1  K-2 at room temperature is primarily attributed to enhanced carrier transport and interfacial energy filtration effects in the composite material. Capitalizing on these excellent TE properties, the maximum power output of flexible TE devices reached 1.13 µW with a temperature difference of 28.6 K. This study demonstrates the potential of Ag2 Se-based TE materials for flexible and efficient energy-harvesting applications.

Flexible Ag2Se Thermoelectric Films Enable the Multifunctional Thermal Perception in Electronic Skins

Skin is critical for shaping our interactions with the environment. The electronic skin (E-skin) has emerged as a promising interface for medical devices to replicate the functions of damaged skin. However, exploration of thermal perception, which is crucial for physiological sensing, has been limited. In this work, a multifunctional E-skin based on flexible thermoelectric Ag2Se films is proposed, which utilizes the Seebeck effect to replicate the sensory functions of natural skin. The E-skin can enable capabilities including temperature perception, tactile perception, contactless perception, and material recognition by analyzing the thermal conduction behaviors of various materials. To further validate the capabilities of constructed E-skins, a wearable device with multiple sensory channels was fabricated and tested for gesture recognition. This work highlights the potential for using flexible thermoelectric materials in advanced biomedical applications including health monitoring and smart prosthetics.

Biomimetic Multimodal Receptors for Comprehensive Artificial Human Somatosensory System

Electronic skin (e-skin) capable of acquiring environmental and physiological information has attracted interest for healthcare, robotics, and human-machine interaction. However, traditional 2D e-skin only allows for in-plane force sensing, which limits access to comprehensive stimulus feedback due to the lack of out-of-plane signal detection caused by its 3D structure. Here, a dimension-switchable bioinspired receptor is reported to achieve multimodal perception by exploiting film kirigami. It offers the detection of in-plane (pressure and bending) and out-of-plane (force and airflow) signals by dynamically inducing the opening and reclosing of sensing unit. The receptor's hygroscopic and thermoelectric properties enable the sensing of humidity and temperature. Meanwhile, the thermoelectric receptor can differentiate mechanical stimuli from temperature by the voltage. The development enables a wide range of sensory capabilities of traditional e-skin and expands the applications in real life.

Efficiency Enhancement in Ocean Thermal Energy Conversion: A Comparative Study of Heat Exchanger Designs for Bi2Te3-Based Thermoelectric Generators

This research focuses on enhancing the efficiency of Bi2Te3-based thermoelectric generators (TEGs) in ocean thermal energy conversion (OTEC) systems through innovative heat exchanger designs. Our comparative study uses computer simulations to evaluate three types of heat exchangers: cavity, plate-fins, and longitudinal vortex generators (LVGs). We analyze their impact on thermoelectric conversion performance, considering the thermal energy transfer from warm surface seawater to TEGs. The results demonstrate that heat exchangers with plate-fins and LVGs significantly outperform the cavity heat exchanger regarding thermal energy transfer efficiency. Specifically, plate-fins increase TEG output power by approximately 22.92% and enhance thermoelectric conversion efficiency by 38.20%. Similarly, LVGs lead to a 13.02% increase in output power and a 16.83% improvement in conversion efficiency. These advancements are contingent upon specific conditions such as seawater flow rates, fin heights, LVG tilt angles, and locations. The study underscores the importance of optimizing heat exchanger designs in OTEC systems, balancing enhanced heat transfer against the required pump power. Our findings contribute to a broader understanding of materials science in sustainable energy technologies.

Pseudopolymorphic Phase Engineering for Improved Thermoelectric Performance in Copper Sulfides

Polymorphism (and its extended form - pseudopolymorphism) in solids is ubiquitous in mineralogy, crystallography, chemistry/biochemistry, materials science, and the pharmaceutical industries. Despite the difficulty of controlling (pseudo-)polymorphism, the realization of specific (pseudo-)polymorphic phases and associated boundary structures is an efficient route to enhance material performance for energy conversion and electromechanical applications. Here, this work applies the pseudopolymorphic phase (PP) concept to a thermoelectric copper sulfide, Cu2- x S (x ≤ 0.25), via CuBr2 doping. A peak ZT value of 1.25 is obtained at 773 K in Cu1.8 S + 3 wt% CuBr2 , which is 2.3 times higher than that of a pristine Cu1.8 S sample. Atomic-resolution scanning transmission electron microscopy confirms the transformation of pristine Cu1.8 S low digenite into PP-engineered high digenite, as well as the formation of (semi-)coherent interfaces between different PPs, which is expected to enhance phonon scattering. The results demonstrate that PP engineering is an effective approach for achieving improved thermoelectric performance in Cu-S compounds. It is also expected to be useful in other materials.

Unveiling the Remarkable Potential of Geopolymer-Based Materials by Harnessing Manganese Dioxide Incorporation

Thermoelectric (TE) building materials have the potential to revolutionize sustainable architecture by converting temperature differences into electrical energy. This study introduces geopolymeric TE materials enhanced with manganese dioxide (MnO2 ) as a modifying agent. Calorimetric experiments examine the impact of MnO2 on geopolymerization. Mechanical tests show that adding MnO2 (up to 5% by weight) improves the geopolymer composite's strength, achieving a peak compressive strength of 36.8 MPa. The Seebeck effect of the MnO2 -modified geopolymeric composite is also studied. The inclusion of MnO2 boosts the Seebeck coefficient of the geopolymer, reaching a notable 4273 µV C-1 at a 5% MnO2 dosage. This enhancement is attributed to an increase in the density of states (DOS) and a reduction in relaxation time. However, excessive MnO2 or high alkali levels may adversely affect the Seebeck coefficient by lengthening the relaxation time.

Low Thermal Conductivity and High Thermoelectric Performance of Nb-Doped Quarternary Mixed Crystal Nb0.05W0.95-xMox(Se1-xSx)2

Transition-metal dichalcogenide WSe2 has attracted increasing interest due to its large thermopower (S), low-cost, and environment-friendly constituents. However, its thermoelectric figure of merit, ZT, of WSe2 is limited due to its large lattice thermal conductivity (κL) and low electrical conductivity. In view of WSe2 and MoS2 having the same crystal structure, here we designed and prepared Nb-doped quarternary mixed crystal (MC) Nb0.05W0.95-xMox(Se1-xSx)2 (0 ≤ x ≤ 0.095). The results indicate that the κL of the MC can reach as low as 0.12 W m K-1 at 850 K, being 93% smaller than that of WSe2. Our analysis reveals that its low κL originates chiefly from intense scattering of both high-frequency phonons from point defects (mainly alloying elements) and mid/low-frequency phonons from MoS2 inclusions residual within MC. In addition, the alloying of WSe2 with MoS2 causes a 5-fold increase in cation vacancies (VW‴'), leading to a large increase in hole concentration and electrical conductivity, which gives rise to a ∼7.5 times increase in power factor (reaching 4.2 μ W cm-1 K-2 at 850 K). As a result, a record high ZTmax = 0.63 is achieved at 850 K for the MC sample with x = 0.076, which is 20 times larger than that of WSe2, demonstrating that MC Nb0.05W0.95-xMox(Se1-xSx)2 is a promising thermoelectric material.

Selective Charge Carrier Transport and Bipolar Conduction in an Inorganic/Organic Bulk-Phase Composite: Optimization for Low-Temperature Thermoelectric Performance

Abundant conducting polymers are promising organic substances for low-temperature thermoelectric applications due to their inherently low thermal conductivities. By introducing a conducting polymer filler (PEDOT:PSS─poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonic acid)) into a representative inorganic thermoelectric matrix (Bi2Te3), a bulk-phase composite (i.e., inorganic matrix/organic filler) for low-temperature thermoelectric applications is proposed. This composite hosts an interfacial energy barrier between the inorganic and organic components, facilitating controlled carrier transport based on its energy level, known as the energy filtering effect, and thus the composite exhibits a highly improved Seebeck coefficient compared to pristine Bi2Te3. The composite also displays a completely different temperature dependence on the Seebeck coefficient from Bi2Te3 due to its distinct bipolar conduction tendency. By regulation of the energy filtering effect and bipolar conduction tendency, the composite undergoes noticeable variations in the Seebeck coefficient, resulting in a significantly enhanced power factor. Furthermore, the composite shows a substantially reduced thermal conductivity compared to Bi2Te3 because it has lower carrier/lattice thermal contributions, possibly attributed to its high carrier/phonon scattering probabilities. Owing to the superior power factor and reduced thermal conductivity, the composite exhibits markedly enhanced thermoelectric performance, achieving a maximum figure of merit of approximately 1.26 at 380 K and an average figure of merit of approximately 1.23 in the temperature range of 323-423 K. The performance of the composite is competitive with previously reported n-type Bi2Te3 binary or ternary analogues. Therefore, the composite is highly expected to be a promising n-type counterpart of p-type Bi2Te3-based alloys for various low-temperature thermoelectric applications.

Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg3(Sb1-xBix)2 Thermoelectric Materials

In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.

All-Scale Hierarchical Structuring, Optimized Carrier Concentration, and Band Manipulation Lead to Ultra-High Thermoelectric Performance in Eco-Friendly MnTe

MnTe emerges as an enormous potential for medium-temperature thermoelectric applications due to its lead-free nature, high content of Mn in the earth's crust, and superior mechanical properties. Here, it is demonstrate that multiple valence band convergence can be realized through Pb and Ag incorporations, producing large Seebeck coefficient. Furthermore, the carrier concentration can be obviously enhance by Pb and Ag codoping, contributing to significant enhancement of power factor. Moreover, microstructural characterizations reveal that PbTe nanorods can be introduced into MnTe matrix by alloying Pb. This can modify the microstructure into all-scale hierarchical architectures (including PbTe nanorods, enhances point-defect scattering, dense dislocations and stacking faults), strongly lowering lattice thermal conductivity to a record low value of 0.376 W m-1 K-1 in MnTe system. As a result, an ultra-high ZT of 1.5 can be achieved in MnTe thermoelectric through all-scale hierarchical structuring, optimized carrier concentration, and valence band convergence, outperforming most of MnTe-based thermoelectric materials.

Effect of Starting Powder Particle Size on the Thermoelectric Properties of Hot-Pressed Bi0.3Sb1.7Te3 Alloys

P-type Bi0.3Sb1.7Te3 polycrystalline pellets were fabricated using different methods: melting and mechanical alloying, followed by hot-press sintering. The effect of starting powder particle size on the thermoelectric properties was investigated in samples prepared using powders of different particle sizes (with micro- and/or nano-scale dimensions). A peak ZT (350 K) of ~1.13 was recorded for hot-pressed samples prepared from mechanical alloyed powder. Moreover, hot-pressed samples prepared from ≤45 μm powder exhibited similar ZT (~1.1). These high ZT values are attributed both to the presence of high-density grain boundaries, which reduced the lattice thermal conductivity, as well as the formation of antisite defects during milling and grinding, which resulted in lower carrier concentrations and higher Seebeck coefficient values. In addition, Bi0.3Sb1.7Te3 bulk nanocomposites were fabricated in an attempt to further reduce the lattice thermal conductivity. Surprisingly, however, the lattice thermal conductivity showed an unexpected increasing trend in nanocomposite samples. This surprising observation can be attributed to a possible overestimation of the lattice thermal conductivity component by using the conventional Wiedemann-Franz law to estimate the electronic thermal conductivity component, which is known to occur in nanocomposite materials with significant grain boundary electrical resistance.

High-Throughput Strategies in the Discovery of Thermoelectric Materials

Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.

Thermoelectric Properties of Mg3(Bi,Sb)2 under Finite Temperatures and Pressures: A First-Principles Study

Mg3Bi2-vSbv (0 ≤ v ≤ 2) is a class of promising thermoelectric materials that have a high thermoelectric performance around room temperatures, whereas their thermoelectric properties under pressures and temperatures are still illusive. In this study, we examined the influence of pressure, temperature, and carrier concentration on the thermoelectric properties of Mg3Bi2-vSbv using first-principle calculations accompanied with Boltzmann transport equations method. There is a decrease in the lattice thermal conductivity of Mg3Sb2 (i.e., v = 2) with increasing pressure. For a general Mg3Bi2-vSbv system, power factors are more effectively improved by n-type doping where electrons are the primary carriers over holes in n-type doping, and can be further enhanced by applied pressure. The figure of merit (zT) exhibits a positive correlation with temperature. A high zT value of 1.53 can be achieved by synergistically tuning the temperature, pressure, and carrier concentration in Mg3Sb2. This study offers valuable insights into the tailoring and optimization of the thermoelectric properties of Mg3Bi2-vSbv.

General Figures of Merit ZQ for Thermoelectric Generators Under Constant Heat-In Flux Boundary

The thermoelectric figure of merit ZT bridges the efficiency and material parameters for a thermoelectric device operating under constant temperature of the hot- and cold-source thermal boundary (Type-I TB). However, many application scenarios fall under the constant heat-in flux (qh ) and constant cold-source temperature (Tc ) thermal boundary (Type-II TB), for which a figure of merit is absent for more than half a century. This study aims to fill this gap and propose a figure of merit ZQD for the thermoelectric devices under the Type-II TB condition, defined asZ Q D = ( Z T c Z T c + 1 ) ( h κ ) ( q h T c ) $Z{Q}_{\mathrm{D}} = ( {\frac{{Z{T}_{\mathrm{c}}}}{{Z{T}_{\mathrm{c}} + 1}}} )( {\frac{h}{\kappa }} )( {\frac{{{q}_{\mathrm{h}}}}{{{T}_{\mathrm{c}}}}} )$ , where Z, h, and κ are the traditional figure of merit, leg height, and thermal conductivity, respectively. The effectiveness of ZQD is verified through both numerical calculations and experiments, which are more accurate and practical than ZT. Furthermore, a system-level figure of merit ZQS is suggested after considering the external thermal resistance. Finally, optimization strategies for thermoelectric systems based on ZQS are proposed, showing a 30% enhancement in the efficiency. ZQD and ZQS are expected to be widely used in the thermoelectric field.

Molecular Engineering for Enhanced Thermoelectric Performance of Single-Walled Carbon Nanotubes/π-Conjugated Organic Small Molecule Hybrids

Hybridizing single-walled carbon nanotubes (SWCNTs) with π-conjugated organic small molecules (π-OSMs) offers a promising approach for producing high-performance thermoelectric (TE) materials through the facile optimization of the molecular geometry and energy levels of π-OSMs. Designing a twisted molecular structure for the π-OSM with the highest occupied molecular orbital energy level comparable to the valence band of SWCNTs enables effective energy filtering between the two materials. The SWCNTs/twisted π-OSM hybrid exhibits a high Seebeck coefficient of 110.4 ± 2.6 µV K-1 , leading to a significantly improved power factor of 2,136 µW m-1 K-2 , which is 2.6 times higher than that of SWCNTs. Moreover, a maximum figure of merit over 0.13 at room temperature is achieved via the efficient TE transport of the SWCNTs/twisted π-OSM hybrid. The study highlights the promising potential of optimizing molecular engineering of π-OSMs for hybridization with SWCNTs to create next-generation, efficient TE materials.

Improved Thermoelectric Performance of Sb2Te3 Nanosheets by Coating Pt Particles in Wide Medium-Temperature Zone

The p-type Sb2Te3 alloy, a binary compound belonging to the V2VI3-based materials, has been widely used as a commercial material in the room-temperature zone. However, its low thermoelectric performance hinders its application in the low-medium temperature range. In this study, we prepared Sb2Te3 nanosheets coated with nanometer-sized Pt particles using a combination of solvothermal and photo-reduction methods. Our findings demonstrate that despite the adverse effects on certain properties, the addition of Pt particles to Sb2Te3 significantly improves the thermoelectric properties, primarily due to the enhanced electronic conductivity. The optimal ZT value reached 1.67 at 573 K for Sb2Te3 coated with 0.2 wt% Pt particles, and it remained above 1.0 within the temperature range of 333-573 K. These values represent a 47% and 49% increase, respectively, compared to the pure Sb2Te3 matrix. This enhancement in thermoelectric performance can be attributed to the presence of Pt metal particles, which effectively enhance carrier and phonon transport properties. Additionally, we conducted a Density Functional Theory (DFT) study to gain further insights into the underlying mechanisms. The results revealed that Sb2Te3 doped with Pt exhibited a doping level in the band structure, and a sharp rise in the Density of States (DOS) was observed. This sharp rise can be attributed to the presence of Pt atoms, which lead to enhanced electronic conductivity. In conclusion, our findings demonstrate that the incorporation of nanometer-sized Pt particles effectively improves the carrier and phonon transport properties of the Sb2Te3 alloy. This makes it a promising candidate for medium-temperature thermoelectric applications, as evidenced by the significant enhancement in thermoelectric performance achieved in this study.

Strained Lamellar Structures Leading to Improved Thermoelectric Performance in Mg3Sb1.5Bi0.5

Mg3Sb2-xBix solid-solutions represent an important class of thermoelectric (TE) materials due to their high efficiency and variable operating temperature range. Of particular significance for midtemperature applications is the Mg3Sb1.5Bi0.5 composition whose superior thermoelectric (TE) performance is attributed to the complex conduction band edge in conjunction with alloy dominated phonon scattering. In this work, we show that microstructure also plays a significant role in lowering the lattice thermal conductivity which in turn affects the overall TE performance (change in peak zT values between 1.1 and 1.4 have been observed). Temperature dependent TE properties of Mg3+xSb1.5Bi0.5 compositions with varying nominal Mg content (x = 0.2, 0.3, 0.4) have been studied. A marked reduction of the lattice thermal conductivity (κL) is observed in compositions with low nominal Mg content (x = 0.2), which is due to the presence of lamellar structures within the grains. These lamellar regions are isostructural to the matrix with a low misfit angle and represent compositional fluctuations in the Bi to Sb ratio. Both the size (200 nm-500 nm) and the interfacial strain contribute to the enhanced phonon scattering. A quantitative estimate of κL reduction due to these structures have been carried out using a mean free path (MFP) spectrum analysis which reveal a good match with experiments at room temperature. Further, the electrical properties are not influenced by these lamellar structures as observed from the similar power-factor (S2σ) and weighted mobilities in all of the compositions. This is due to their similar orientation to the adjacent matrix region. Thus, the zT parameter in the various compositions with similar carrier concentration can be significantly altered (∼25%) by adjusting the nominal Mg content. The results demonstrate that preferential phonon scattering by microstructure modification can be a new route for property improvement in Mg3+xSb2-yBiy solid-solutions.

Assessing Effects of van der Waals Corrections on Elasticity of Mg3Bi2-xSbx in DFT Calculations

As a promising room-temperature thermoelectric material, the elastic properties of Mg3Bi2-xSbx (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two typical van der Waals corrections on the elasticity of Mg3Bi2-xSbx nanocomposites using first-principles calculations within the frame of density functional theory. The two van der Waals correction methods, PBE-D3 and vdW-DFq, were examined and compared to PBE functionals without van der Waals correction. Interestingly, our findings reveal that the lattice constant of the system shrinks by approximately 1% when the PBE-D3 interaction is included. This leads to significant changes in certain mechanical properties. We conducted a comprehensive assessment of the elastic performance of Mg3Bi2-xSbx, including Young's modulus, Poisson's ratio, bulk modulus, etc., for different concentration of Sb in a 40-atom simulation box. The presence or absence of van der Waals corrections does not change the trend of elasticity with respect to the concentration of Sb; instead, it affects the absolute values. Our investigation not only clarifies the influence of van der Waals correction methods on the elasticity of Mg3Bi2-xSbx, but could also help inform the material design of room-temperature thermoelectric devices, as well as the development of vdW corrections in DFT calculations.

Selective Scatterings of Phonons and Electrons in Defective Half-Heusler Nb1- δ CoSb for the Figure of Merit zT > 1

The recently developed defective 19-electron half-Heusler (HH) compounds, represented by Nb1- δ CoSb, possess massive intrinsic vacancies at the cation site and thus intrinsically low lattice thermal conductivity that is desirable for thermoelectric (TE) applications. Yet the TE performance of defective HHs with a maximum figure of merit (zT) <1.0 is still inferior to that of the conventional 18-electron ones. Here, a peak zT exceeding unity is obtained at 1123 K for both Nb0.7 Ta0.13 CoSb and Nb0.6 Ta0.23 CoSb, a benchmark value for defective 19-electron HHs. The improved zT results from the achievement of selective scatterings of phonons and electrons in defective Nb0.83 CoSb, using lanthanide contraction as a design factor to select alloying elements that can strongly impede the phonon propagation but weakly disturb the periodic potential. Despite the massive vacancies induced strong point defect scattering of phonons in Nb0.83 CoSb, Ta alloying is still found effective in suppressing lattice thermal conductivity while maintaining the carrier mobility almost unchanged. In comparison, V alloying significantly deteriorates the carrier transport and thus the TE performance. These results enlarge the category of high-performance HH TE materials beyond the conventional 18-electron ones and highlight the effectiveness of selective scatterings of phonons and electrons in developing TE materials even with massive vacancies.

Band engineering enhances thermoelectric performance of Ag-doped Sn0.98Se

Ag doping can effectively increase the carrier concentration ofp-type SnSe polycrystalline, thereby enhancing the thermoelectric (TE) performance. However, the key role of the transport valence band in Ag-doped SnSe remains unclear. Particularly, understanding the influence of evaluating the optimal balance between band convergence and carrier mobility on weighted mobility is a primary consideration in designing high-performance TE materials. Here, we strongly confirm through theoretical and experimental evidence that Ag-doped Sn0.98Se can promote the evolution of valence bands and achieve band convergence and density of states distortion. The significantly increased carrier concentration and effective mass result in a dramatic increase in weighted mobility, which favors the achievement of superior power factors. Furthermore, the Debye model reveals the reasons for the evolution of lattice thermal conductivity. Eventually, a superior average power factor and averagezTvalue are obtained in the Ag-doped samples in both directions over the entire test temperature range. This strategy of improving TE performance through band engineering provides an effective way to advance TEs.

High-Throughput Screening of High-Performance Thermoelectric Materials with Gibbs Free Energy and Electronegativity

Thermoelectric (TE) materials are an important class of energy materials that can directly convert thermal energy into electrical energy. Screening high-performance thermoelectric materials and improving their TE properties are important goals of TE materials research. Based on the objective relationship among the molar Gibbs free energy (Gm), the chemical potential, the Fermi level, the electronegativity (X) and the TE property of a material, a new method for screening TE materials with high throughput is proposed. This method requires no experiments and no first principle or Ab initio calculation. It only needs to find or calculate the molar Gibbs free energy and electronegativity of the material. Here, by calculating a variety of typical and atypical TE materials, it is found that the molar Gibbs free energy of Bi2Te3 and Sb2Te3 from 298 to 600 K (Gm = -130.20~-248.82 kJ/mol) and the electronegativity of Bi2Te3 and Sb2Te3 and PbTe (X = 1.80~2.21) can be used as criteria to judge the potential of materials to become high-performance TE materials. For good TE compounds, Gm and X are required to meet the corresponding standards at the same time. By taking Gm = -130.20~-248.82 kJ/mol and X = 1.80~2.21 as screening criteria for high performance TE materials, it is found that the Gm and X of all 15 typical TE materials and 9 widely studied TE materials meet the requirement very well, except for the X of Mg2Si, and 64 pure substances are screened as potential TE materials from 102 atypical TE materials. In addition, with reference to their electronegativity, 44 pure substances are selected directly from a thermochemical data book as potential high-performance TE materials. A particular finding is that several carbides, such as Be2C, CaC2, BaC2, SmC2, TaC and NbC, may have certain TE properties. Because the Gm and X of pure substances can be easily found in thermochemical data books and calculated using the X of pure elements, respectively, the Gm and X of materials can be used as good high-throughput screening criteria for predicting TE properties.

Flexible Ag-S-Te System with Promising Room-Temperature Thermoelectric Performance

Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag₂S_xTe_1-x (x = 0.55-0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag₂S_0.55Te_0.45 sample is 4.9 μW cm^-1 K^-2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag₂S_0.55Te_0.45 (Ag₂S_0.55Te_0.45+y) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm^-1 K^-2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

A unified understanding of minimum lattice thermal conductivity

We propose a first-principles model of minimum lattice thermal conductivity ([Formula: see text]) based on a unified theoretical treatment of thermal transport in crystals and glasses. We apply this model to thousands of inorganic compounds and find a universal behavior of [Formula: see text] in crystals in the high-temperature limit: The isotropically averaged [Formula: see text] is independent of structural complexity and bounded within a range from ∼0.1 to ∼2.6 W/(m K), in striking contrast to the conventional phonon gas model which predicts no lower bound. We unveil the underlying physics by showing that for a given parent compound, [Formula: see text] is bounded from below by a value that is approximately insensitive to disorder, but the relative importance of different heat transport channels (phonon gas versus diffuson) depends strongly on the degree of disorder. Moreover, we propose that the diffuson-dominated [Formula: see text] in complex and disordered compounds might be effectively approximated by the phonon gas model for an ordered compound by averaging out disorder and applying phonon unfolding. With these insights, we further bridge the knowledge gap between our model and the well-known Cahill-Watson-Pohl (CWP) model, rationalizing the successes and limitations of the CWP model in the absence of heat transfer mediated by diffusons. Finally, we construct graph network and random forest machine learning models to extend our predictions to all compounds within the Inorganic Crystal Structure Database (ICSD), which were validated against thermoelectric materials possessing experimentally measured ultralow κL. Our work offers a unified understanding of [Formula: see text], which can guide the rational engineering of materials to achieve [Formula: see text].

Flexible Thermoelectric Films Based on Bi2Te3 Nanowires and Boron Nitride Nanotube Networks with Carbon Doping

Energy recovery and reuse, industrial waste heat, and thermal energy recovery and conversion in emerging electronic devices are topics of widespread interest. Flexible composite thermoelectric (TE) films have become the key to TE conversion, and many studies and synthesis methods related to them have made great progress. However, little research has been performed on the corresponding composites of typical TE materials with low-dimensional nanotubular materials, particularly modulation of the overall TE properties using doped low-dimensional nanotubular materials. In this work, high-quality bismuth telluride (Bi₂Te₃) nanowires and boron nitride nanotubes (BNNTs) were prepared using electrolytic deposition and high-temperature catalytic deposition, respectively. Bi₂Te₃-BNNTs composite films were prepared using a solvent hot pressing method. The Bi₂Te₃-BNNTs composite film conductivity reached 179.6 S/cm at room temperature (300 K), the corresponding Seebeck coefficient was 171.4 μV/K, and the power factor (PF) was 52.8 nW/mK². Carbon doping of BNNTs resulted in carbon-boron nitride nanotubes (BCNNTs), and Bi₂Te₃-BNNTs composite films were prepared. The Bi₂Te₃-BCNNTs composite films obtained a conductivity of 4629.6 S/cm, at room temperature (300 K), a corresponding Seebeck coefficient of 181.2 μV/K, and a PF of 1520.0 nW/mK². This study has important reference value for the application of TE conversion. Moreover, the electrical conductivity decreased by no more than 10% after 400 cycles of bending tests, and the electrical conductivity showed signs of recovery after repressing thermally, which undoubtedly proves that Bi₂Te₃-BCNNTs composite films have good flexibility and thermal stability, and this has contributed to the application and promotion of flexible thermoelectric materials.

Enhanced Power Factor and Ultralow Lattice Thermal Conductivity Induced High Thermoelectric Performance of BiCuTeO/BiCuSeO Superlattice

Based on the first-principles calculations, the electronic structure and transport properties of BiMChO (M=Cu and Ag, Ch=S, Se, and Te) superlattices have been studied. They are all semiconductors with indirect band gaps. The increased band gap and decreased band dispersion near the valence band maximum (VBM) lead to the lowest electrical conductivity and the lowest power factor for p-type BiAgSeO/BiCuSeO. The band gap value of BiCuTeO/BiCuSeO decreases because of the up-shifted Fermi level of BiCuTeO compared with BiCuSeO, which would lead to relatively high electrical conductivity. The converged bands near VBM can produce a large effective mass of density of states (DOS) without explicitly reducing the mobility µ for p-type BiCuTeO/BiCuSeO, which means a relatively large Seebeck coefficient. Therefore, the power factor increases by 15% compared with BiCuSeO. The up-shifted Fermi level leading to the band structure near VBM is dominated by BiCuTeO for the BiCuTeO/BiCuSeO superlattice. The similar crystal structures bring out the converged bands near VBM along the high symmetry points Γ-X and Z-R. Further studies show that BiCuTeO/BiCuSeO possesses the lowest lattice thermal conductivity among all the superlattices. These result in the ZT value of p-type BiCuTeO/BiCuSeO increasing by over 2 times compared with BiCuSeO at 700 K.

Modulation of Vacancy Defects and Texture for High Performance n-Type Bi2 Te3 via High Energy Refinement

The carrier concentration in n-type layered Bi₂ Te₃ -based thermoelectric (TE) material is significantly impacted by the donor-like effect, which would be further intensified by the nonbasal slip during grain refinement of crushing, milling, and deformation, inducing a big challenge to improve its TE performance and mechanical property simultaneously. In this work, high-energy refinement and hot-pressing are used to stabilize the carrier concentration due to the facilitated recovery of cation and anion vacancies. Based on this, combined with SbI₃ doping and hot deformation, the optimized carrier concentration and high texture degree are simultaneously realized. As a result, a peak figure of merit (zT) of 1.14 at 323 K for Bi₂ Te_2.7 Se_0.3  + 0.05 wt.% SbI₃ sample with the high bending strength of 100 Mpa is obtained. Furthermore, a 31-couple thermoelectric cooling device consisted of n-type Bi₂ Te_2.7 Se_0.3  + 0.05 wt.% SbI₃ and commercial p-type Bi_0.5 Sb_1.5 Te₃ legs is fabricated, which generates the large maximum temperature difference (ΔT_max ) of 85 K at a hot-side temperature of 343 K. Thus, the discovery of recovery effect in high energy refinement and hot-pressing has significant implications for improving TE performance and mechanical strength of n-type Bi₂ Te₃ , thereby promoting its applications in harsh conditions.

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Mg₃ (Sb,Bi)₂ is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (V_Mg ) in Mg₃ (Sb,Bi)₂ . This study proposes an approach to mitigating the negative scattering effect of V_Mg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and C_s -corrected scanning transmission electron microscopy analyses indicated that the V_Mg tends to coalesce due to the introduced Bi vacancies (V_Bi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic V_Mg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg₃ (Sb,Bi)₂ by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg₃ (Sb,Bi)₂ as an emerging thermoelectric material.

Simultaneous Enhancement of the Power Factor and Phonon Blocking in Nb-Doped WSe2

Transition-metal dichalcogenide WSe₂ is a potentially good thermoelectric (TE) material due to its high thermopower (S). However, the low electrical conductivity (σ), power factor (PF), and relatively large lattice thermal conductivity (κ_L) of pristine WSe₂ degenerate its TE performance. Here, we show that through proper substitution of Nb for W in WSe₂, its PF can be increased by ∼10 times, reaching 5.44 μW cm^-1 K^-2 (at 850 K); simultaneously, κ_L lowers from 1.70 to 0.80 W m^-1 K^-1. Experiments reveal that the increase of PF originates from both increased hole concentration due to the replacement of W⁴⁺ by Nb³⁺ and elevated thermopower (S) caused by the enhanced density of states effective mass, while the reduced κ_L comes mainly from phonon scattering at point defects Nb_W. As a result, a record high figure of merit ZT_max ∼0.42 is achieved at 850 K for the doped sample W_0.95Nb_0.05Se₂, which is ∼13 times larger than that of pristine WSe₂, demonstrating that Nb doping at the W site is an effective approach to improve the TE performance of WSe₂.

Highly Stable Metal─Na0.02Pb0.98Te Contacts for Medium Temperature Thermoelectric Devices

In the medium temperature (600-850 K) range, Na_0.02Pb_0.98Te is a highly efficient p-type thermoelectric compound. Device fabrication utilizing this compound for power generation demands highly stable low-contact resistance contacts with metal electrodes. This work investigates the microstructural, electrical, mechanical, and thermochemical stability of Na_0.02Pb_0.98Te-metal (Ni, Fe, and Co) contacts made by a one-step vacuum hot pressing process. Direct contact mostly resulted in either an interface with poor mechanical integrity, as in Co and Fe, or poisoning of the TE compound, as in the case of Ni, which results in high specific contact resistance (r_c). In Ni and Co, adding a SnTe interlayer lowers the r_c and strengthens the contact. It does not, however, effectively stop Ni from diffusing into Na_0.02Pb_0.98Te. The bonding is poor in the Fe/SnTe/Na_0.02Pb_0.98Te contacts due to the absence of any reaction at the Fe/SnTe interface. A composite buffer layer Co + 75 vol % SnTe with SnTe improves the mechanical stability of the Co contact with moderately lesser r_c than pure SnTe alone. However, a similar approach with Fe does not yield stable contact. The Co/Co + 75 vol % SnTe/SnTe/Na_0.02Pb_0.98Te contact exhibits r_c less than 50 μΩ cm² and has good microstructural and mechanical stability after annealing at 723 K for 170 h.

Roadmap on thermoelectricity

The increasing energy demand and the ever more pressing need for clean technologies of energy conversion pose one of the most urgent and complicated issues of our age. Thermoelectricity, namely the direct conversion of waste heat into electricity, is a promising technique based on a long-standing physical phenomenon, which still has not fully developed its potential, mainly due to the low efficiency of the process. In order to improve the thermoelectric performance, a huge effort is being made by physicists, materials scientists and engineers, with the primary aims of better understanding the fundamental issues ruling the improvement of the thermoelectric figure of merit, and finally building the most efficient thermoelectric devices. In this Roadmap an overview is given about the most recent experimental and computational results obtained within the Italian research community on the optimization of composition and morphology of some thermoelectric materials, as well as on the design of thermoelectric and hybrid thermoelectric/photovoltaic devices.

Investigating the Role of Vacancies on the Thermoelectric Properties of EuCuSb-Eu2ZnSb2 Alloys

AMX compounds with the ZrBeSi structure type tolerate a vacancy concentration of up to 50% on the M-site in their planar honeycomb MX-layers. Here, we investigate the impact of vacancies on the thermal and electronic properties across the full EuCu1-xZn0.5xSb solid solution. The transition from a fully-occupied honeycomb (EuCuSb) to one with a quarter of the atoms missing (EuZn0.5Sb) has wide-ranging structural consequences; we observe a significant non-linear expansion of the average bond lengths in the honeycomb, consistent with anion-anion repulsion, and increasing atomic displacement parameters on the M and Sb-sites. Increasing the vacancy concentration causes lattice softening and a corresponding decrease in sound velocity, as well as a rapid increase in point defect scattering, leading to a drop in room temperature lattice thermal conductivity from 3 W/mK to 0.5 W/mK. The effect of increasing Zn and vacancy concentration on the electronic properties is more nuanced, leading to a small increase in effective mass, large increase in band gap, and decrease in carrier concentration. Ultimately, the maximum zT increases from 0.09 to 0.7 as the composition varies from EuCuSb to EuZn0.5Sb.

Perspective and Prospects for Ordered Functional Materials

Many functional materials are approaching their performance limits due to inherent trade-offs between essential physical properties. Such trade-offs can be overcome by engineering a material that has an ordered arrangement of structural units, including constituent components/phases, grains, and domains. By rationally manipulating the ordering with abundant structural units at multiple length scales, the structural ordering opens up unprecedented opportunities to create transformative functional materials, as amplified properties or disruptive functionalities can be realized. In this perspective article, a brief overview of recent advances in the emerging ordered functional materials across catalytic, thermoelectric, and magnetic materials regarding the fabrication, structure, and property is presented. Then the possibility of applying this structural ordering strategy to highly efficient neuromorphic computing devices and durable battery materials is discussed. Finally, remaining scientific challenges are highlighted, and the prospects for ordered functional materials are made. This perspective aims to draw the attention of the scientific community to the emerging ordered functional materials and trigger intense studies on this topic.

Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Ge1-x-yBixCayTe with Ultrafine Ferroelectric Domain Structure

GeTe and its derivatives emerging as a promising lead-free thermoelectric candidate have received extensive attention. Here, a new route was proposed that the minimization of κ_L in GeTe through considerable enhancement of acoustic phonon scattering by introducing ultrafine ferroelectric domain structure. We found that Bi and Ca dopants induce strong atomic strain disturbance in the GeTe matrix because of large differences in atom radius with host elements, leading to the formation of ultrafine ferroelectric domain structure. Furthermore, large strain field and mass fluctuation induced by Bi and Ca codoping result in further reduced κ_L by effectively shortening the phonon relaxation time. The co-existence of ultrafine ferroelectric domain structure, large strain field, and mass fluctuation contribute to an ultralow lattice thermal conductivity of 0.48 W m^-1 K^-1 at 823 K. Bi and Ca codoping significantly enhances the Seebeck coefficient and power factor through reducing the energy offset between light and heavy valence bands of GeTe. The modified band structure boosts the power factor up to 47 μW cm^-1 K^-2 in Ge_0.85Bi_0.09Ca_0.06Te. Ultimately, a high ZT of ∼2.2 can be attained. This work demonstrates a new design paradigm for developing high-performance thermoelectric materials.

High-Conductivity Chalcogenide Glasses in Ag-Ga2Te3-SnTe Systems and Their Suitability as Thermoelectric Materials

A novel high-conductivity Ag_x[(Ga₂Te₃)₃₄(SnTe)₆₆]_100-x tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of x = 0-15 mol %. A bulk Ag₁₀[(Ga₂Te₃)₃₄(SnTe)₆₆]₉₀ glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ_300 K = 46 S m^-1), larger glass transition temperature (T_g = 482 K), and ultralower thermal conductivity (∼0.19 W m^-1 K^-1) compared to those of previously reported Cu-Ge-Te, Cu-As-Te, Cu-Ge-As-Te, and Cu-As-Se-Te glassy systems with the approximate doping concentrations of 5-20%, demonstrating that this distinctive Ag-Ga₂Te₃-SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag-Ga₂Te₃-SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.

Development of Nanostructured Bi2Te3 with High Thermoelectric Performance by Scalable Synthesis and Microstructure Manipulations

Nanostructuring of thermoelectric (TE) materials leads to improved energy conversion performance; however, it requires a perfect fit between the nanoprecipitates' chemistry and crystal structure and those of the matrix. We synthesize bulk Bi₂Te₃ from molecular precursors and characterize their structure and chemistry using electron microscopy and analyze their TE transport properties in the range of 300-500 K. We find that synthesis from Bi₂O₃ + Na₂TeO₃ precursors results in n-type Bi₂Te₃ containing a high number density (N_v ∼ 2.45 × 10²³ m^-3) of Te-nanoprecipitates decorating the Bi₂Te₃ grain boundaries (GBs), which yield enhanced TE performance with a power factor (PF) of ∼19 μW cm^-1 K^-2 at 300 K. First-principles calculations validate the role of Te/Bi₂Te₃ interfaces in increasing the charge carrier concentration, density of states, and electrical conductivity. These optimized TE coefficients yield a promising TE figure of merit (zT) peak value of 1.30 at 450 K and an average zT of 1.14 from 300 to 500 K. This is one of the cutting-edge zT values recorded for n-type Bi₂Te₃ produced by chemical routes. We believe that this chemical synthesis strategy will be beneficial for future development of scalable n-type Bi₂Te₃ based devices.

Correlated Rattling of Sodium-Chains Suppressing Thermal Conduction in Thermoelectric Stannides

Tin-based intermetallics with tunnel frameworks containing zigzag Na chains that excite correlated rattling impinging on the framework phonons are attractive as thermoelectric materials owing to their low lattice thermal conductivity. The correlated rattling of Na atoms in the zigzag chains and the origin of the low thermal conductivity is uncovered via experimental and computational analyses. The Na atoms behave as oscillators along the tunnel, resulting in substantial interactions between Na atoms in the chain and between the chain and framework. In these intermetallic compounds, a shorter inter-rattler distance results in lower thermal conductivity, suggesting that phonon scattering by the correlated rattling Na-chains is enhanced. These results provide new insights into the behavior of thermoelectric materials with low thermal conductivity and suggest strategies for the development of such materials that utilize the correlated rattling.

High-Power Factor Enabled by Efficient Manipulation Interaxial Angle for Enhancing Thermoelectrics of GeTe-Cu2Te Alloys

The emerged strategy of manipulating the rhombohedral crystal structure provides another new degree of freedom for optimizing the thermoelectric properties of GeTe-based compounds. However, the concept is difficult to be effectively measured and often depends on heavy doping that scatters carriers severely. Herein, we synergistically manipulate lattice distortion and vacancy concentration to promote the excellent electrical transport of GeTe-Cu2Te alloys and quantify the interaxial angle-dependent density of state effective mass. Distinct from the conventional electronic coupling effect, about 2% substitution of Zr4+ significantly increases the interaxial angle, thereby enhancing the band convergence effect and improving the Seebeck coefficient. In addition, Ge-compensation attenuates the mobility deterioration, leading to improved power factor over the whole temperature range, especially exceeding ∼22 μW cm-1 K-2 at 300 K. Furthermore, the Debye-Callaway model elucidates low lattice thermal conductivity due to strong phonon scattering from Zr/Ge substitutional defects. As a result, the highest figure of merit zT of ∼1.6 (at 650 K) and average zTave of ∼0.9 (300-750 K) are obtained in (Ge1.01Zr0.02Te)0.985(Cu2Te)0.015. This work demonstrates the effective band modulation of Zr on GeTe-based materials, indicating that the modification of the interaxial angle is a deep pathway to improve thermoelectrics.

Structure Optimization and Multi-frequency Phonon Scattering Boosting Thermoelectrics in Self-Doped CoSb3-Based Skutterudites

The utilization of thermoelectric devices that directly convert waste heat to electricity is an effective approach to alleviate the global energy crisis. However, the low efficiency of thermoelectric materials has puzzled the widespread applications. The CoSb₃-based skutterudites are favored by device integration due to the excellent thermal stability, while the development of pristine CoSb₃ materials is limited by the ultra-high thermal conductivity and the poor Seebeck coefficient. In this work, we demonstrate that both structural improvement and strong phonon interaction are realized simultaneously in In-filled CoSb₃ coordinated with excessive Sb. The extra Sb compensates the deficiency on the Sb₄ ring, improving the Seebeck coefficient, and cooperates with In to further advance the carrier concentration. Therefore, the structure optimization and chemical potential regulation maximize the electrical properties. Thermally, the residual InSb nanoparticles and partial In/Sb-alloying, along with vibration of In in voids, jointly shorten the multi-frequency phonon relaxation time, leading to a dramatic decline in the lattice thermal conductivity. As a result, a maximum zT_max of ∼1.27 at 650 K and an average zT_avg of ∼0.9 from 300 to 750 K was obtained in In_1.4Co₄Sb₁₂ + 8%Sb, respectively. Our findings provide valuable guidance for the selection of CoSb₃-based skutterudite dopants to achieve high-performance thermoelectric materials.