Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here it is shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing

This study investigates the effects of annealing on the tunnel magnetoresistance (TMR) ratio in CoFeB/MgO/CoFeB-based magnetic tunnel junctions (MTJs) with different capping layers and correlates them with microstructural changes. It is found that the capping layer plays an important role in determining the maximum TMR ratio and the corresponding annealing temperature (Tann). For a Pt capping layer, the TMR reaches ~95% at a Tann of 350 °C, then decreases upon a further increase in Tann. A microstructural analysis reveals that the low TMR is due to severe intermixing in the Pt/CoFeB layers. On the other hand, when introducing a Ta capping layer with suppressed diffusion into the CoFeB layer, the TMR continues to increase with Tann up to 400 °C, reaching ~250%. Our findings indicate that the proper selection of a capping layer can increase the annealing temperature of MTJs so that it becomes compatible with the complementary metal-oxide-semiconductor backend process.

Layer-Dependent Magnetism and Spin Fluctuations in Atomically Thin van der Waals Magnet CrPS4

van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling and layer-number dependent magnetic and electronic interactions, which promise to deliver previously unavailable merits to develop multifunctional microelectronic devices. As a further ingredient of this emerging topic, here we report nanoscale quantum sensing and imaging of the atomically thin vdW magnet chromium thiophosphate CrPS4, revealing its characteristic layer-dependent 2D static magnetism and dynamic spin fluctuations. We also show a large tunneling magnetoresistance in CrPS4-based spin filter vdW heterostructures. The excellent material stability and robust strategy against environmental degradation in combination with tailored magnetic properties highlight the potential of CrPS4 in developing state-of-the-art 2D spintronic devices for next-generation information technologies.

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

Periodic superlattices constitute ideal structures to modulate the transport properties of two-dimensional materials. In this paper, we show that the tunneling magnetoresistance (TMR) in phosphorene can be tuned effectively through periodic magnetic modulation. Deltaic magnetic barriers are arranged periodically along the phosphorene armchair direction in parallel (PM) and anti-parallel magnetization (AM) fashion. The theoretical treatment is based on a low-energy effective Hamiltonian, the transfer matrix method and the Landauer-Büttiker formalism. We find that the periodic modulation gives rise to oscillating transport characteristics for both PM and AM configurations. More importantly, by adjusting the electrostatic potential appropriately we find Fermi energy regions for which the AM conductance is reduced significantly while the PM conductance keeps considerable values, resulting in an effective TMR that increases with the magnetic field strength. These findings could be useful in the design of magnetoresistive devices based on magnetic phosphorene superlattices.

Self-consistent computation of spin torques and magneto-resistance in tunnel junctions and magnetic read-heads with metallic pinhole defects

A three-dimensional self-consistent spin transport model is developed, which includes both tunnelling transport, leading to tunnelling magneto-resistance, as well as metallic transport, leading to giant magneto-resistance. An explicit solution to the drift-diffusion model is also derived, which allows analysing the effect of both the reference and free layer thickness on the spin-transfer torque polarization and field-like coefficient. It is shown the model developed here can be used to compute the signal-to-noise ratio in realistic magnetic read-heads, where spin torque-induced fluctuations and instabilities limit the maximum operating voltage. The effect of metallic pinhole defects in the insulator layer is also analysed. Increasing the area covered by pinholes results in a rapid degradation of the magneto-resistance, following an inverse dependence. Moreover, the spin torque angular dependence becomes skewed, similar to that obtained in fully metallic spin valves, and the spin-transfer torque polarization decreases. The same results are obtained when considering tunnel junctions with a single pinhole defect, but decreasing cross-sectional area, showing that even a single pinhole defect can significantly degrade the performance of tunnel junctions and magnetic read-heads below the 40 nm node.

Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness

The van der Waals magnets CrX₃ (X = I, Br, and Cl) exhibit highly tunable magnetic properties and are promising candidates for developing novel two-dimensional (2D) spintronic devices such as magnetic tunnel junctions and spin tunneling transistors. Previous studies of the antiferromagnetic CrCl₃ have mainly focused on mechanically exfoliated samples. Controlled synthesis of high quality atomically thin flakes is critical for their technological implementation but has not been achieved to date. This work reports the growth of large CrCl₃ flakes down to monolayer thickness via the physical vapor transport technique. Both isolated flakes with well-defined facets and long stripe samples with the trilayer portion exceeding 60 µm have been obtained. High-resolution transmission electron microscopy studies show that the CrCl₃ flakes are single crystalline in the monoclinic structure, consistent with the Raman results. The room temperature stability of the CrCl₃ flakes decreases with decreasing thickness. The tunneling magnetoresistance of graphite/CrCl₃ /graphite tunnel junctions confirms that few-layer CrCl₃ possesses in-plane magnetic anisotropy and Néel temperature of 17 K. This study paves the path for developing CrCl₃ -based scalable 2D spintronic applications.

Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices

Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-) MSSLs as typical aperiodic superlattices. Our findings indicate that aperiodic superlattices with higher disorder provide better spin-valley polarization and TMR values. In particular, TM-MSSLs reduce considerably the conductance oscillations giving rise to two well-defined spin-valley polarization states and a better TMR than F- and P-MSSLs. F-MSSLs also improve the spin-valley polarization and TMR, however they depend strongly on the parity of the superlattice generation.

Temperature effects on the conductance, spin-valley polarization and tunneling magnetoresistance of single magnetic silicene junctions

Magnetic silicene junctions are versatile structures with spin-valley polarization and magnetoresistive capabilities. Here, we investigate the temperature effects on the transport properties of single magnetic silicene junctions. We use the transfer matrix method and the Landauer-Büttiker formalism to calculate the transmittance, conductance, spin-valley polarization and tunneling magnetoresistance (TMR). We studied the case forT= 0 K, finding the specific parameters where the spin-valley polarization and the TMR reach optimized values. Regarding the temperature effects, we find that its impact is not the same on the different transport properties. In the case of the conductance, depending on the spin-valley configuration the resonant peaks disappear at different temperatures. The spin polarization persists at a considerable value up toT= 80 K, contrary to the valley polarization which is more susceptible to the temperature effects. In addition, a stepwise spin-valley polarization can be achieved at low temperature. The TMR is attenuated considerably as the temperature rises, decreasing more than two orders of magnitude afterT= 20 K. These findings indicate that in order to preserve the spin-valley polarization and magnetoresistive capabilities of magnetic silicene junctions is fundamental to modulate the temperature adequately.

Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet

Materials with a quasi-one-dimensional stripy magnetic order often exhibit low crystal and magnetic symmetries, thus allowing the presence of various energy coupling terms and giving rise to macroscopic interplay between spin, charge, and phonon. In this work, we performed optical, electrical and magnetic characterizations combined with first-principles calculations on a van der Waals antiferromagnetic insulator chromium oxychloride (CrOCl). We detected the subtle phase transition behaviors of exfoliated CrOCl under varying temperature and magnetic field and clarified its controversial spin structures. We found that the antiferromagnetism and its air stability persist down to few-layer samples, making it a promising candidate for future 2D spintronic devices. Additionally, we verified the magnetoelastic coupling effect in CrOCl, allowing for the potential manipulation of the magnetic states via electric field or strain. These virtues of CrOCl provide us with an ideal platform for fundamental research on spin-charge, spin-phonon coupling, and spin-interactions.

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe₃ GeTe₂ as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe₃ GeTe₂ /InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all-2D van der Waals ferromagnet/semiconductor heterojunction devices.

High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition

Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) are a key to obtaining high-tunneling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including atomic-scale control over the TB thickness, conformal coating, and a low defect density. Motivated by this, this work explores the fabrication and characterization of spin-valve Fe/ALD-Al₂O₃/Fe MTJs with an ALD-Al₂O₃ TB thickness of 0.55 nm using in situ ALD. Remarkably, high TMR values of ∼77 and ∼90% have been obtained, respectively, at room temperature and at 100 K, which are comparable to the best reported values on MTJs having thermal AlO_x TBs with optimized device structures. In situ scanning tunneling spectroscopy characterization of the ALD-Al₂O₃ TBs has revealed a higher TB height (E_b) of 1.33 ± 0.06 eV, in contrast to E_b ∼ 0.3-0.6 eV for their AlO_x TB counterparts, indicative of significantly lower defect concentrations in the former. This first success of the MTJs with subnanometer thick ALD-Al₂O₃ TBs demonstrates the feasibility of in situ ALD for the fabrication of pinhole-free and low-defect ultrathin TBs for practical applications, and the performance could be further improved through device optimization.

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1-CrTe2 Electrodes

Two-dimensional (2D) van der Waals (vdW) heterostructures have opened new avenues for spintronic applications with novel properties. Here, by density functional theory calculations, we investigated the spin-dependent transport in vdW magnetic tunnel junctions (MTJs) composed of 1T-CrTe₂ ferromagnetic electrodes. Meanwhile, graphene and h-BN are employed as tunnel barriers. It has been found that the tunneling magnetoresistance (TMR) effects of two types of vdW MTJs present analogous trends: thicknesses of barriers have a great influence on the TMR ratios, which reach up to the maximum when barriers increase to five monolayers. However, despite the similarity, the graphene-barrier junction is more promising for optimization. Through observing the energy-resolved transmission spectra of vdW MTJs, we noticed that TMR ratios of graphene-barrier junctions are tunable and could be enhanced through tuning the position of Fermi energy. Therefore, we successfully realized the TMR optimization by substitutional doping. When substituting one carbon atom with one boron atom in the graphene barrier, TMR ratios are drastically improved, and a TMR ratio as high as 6962% could be obtained in the doped seven-monolayer-barrier junction. Our results pave the way for vdW MTJ applications in spintronics.

Van der Waals Multiferroic Tunnel Junctions

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for nonvolatile memory devices. So far, however, all of the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic Fe_nGeTe₂ (n = 3, 4, 5) electrodes and 2D ferroelectric In₂Se₃ barrier layers. We demonstrate that such Fe_mGeTe₂/In₂Se₃/Fe_nGeTe₂ (m, n = 3, 4, 5; m ≠ n) MFTJs exhibit multiple nonvolatile resistance states associated with different polarization orientation of the ferroelectric In₂Se₃ layer and magnetization alignment of the two ferromagnetic Fe_nGeTe₂ layers. We find a remarkably low RA product (less than 1 Ω·μm²) which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for nonvolatile memory applications.

Design, Analysis and Simulation of a MEMS-Based Gyroscope with Differential Tunneling Magnetoresistance Sensing Structure

The design, analysis, and simulation of a new Micro-electromechanical System (MEMS) gyroscope based on differential tunneling magnetoresistance sensing are presented in this paper. The device is driven by electrostatic force, whereas the Coriolis displacements are transferred to intensity variations of magnetic fields, further detected by the Tunneling Magnetoresistance units. The magnetic fields are generated by a pair of two-layer planar multi-turn copper coils that are coated on the backs of the inner masses. Together with the dual-mass structure of proposed tuning fork gyroscope, a two-stage differential detection is formed, thereby enabling rejection of mechanical and magnetic common-mode errors concurrently. The overall conception is described followed by detailed analyses of proposed micro-gyroscope and rectangle coil. Subsequently, the FEM simulations are implemented to determine the mechanical and magnetic characteristics of the device separately. The results demonstrate that the micro-gyroscope has a mechanical sensitivity of 1.754 nm/°/s, and the micro-coil has a maximum sensitivity of 41.38 mOe/µm. When the detection height of Tunneling Magnetoresistance unit is set as 60 µm, the proposed device exhibits a voltage-angular velocity sensitivity of 0.131 mV/°/s with a noise floor of 7.713 × 10⁻⁶°/s/Hz in the absence of any external amplification.

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Magnetic tunnel junctions (MTJs) capable of electrical read and write operations have emerged as a canonical building block for nonvolatile memory and logic. However, the cause of the widespread device properties found experimentally in various MTJ stacks, including tunneling magnetoresistance (TMR), perpendicular magnetic anisotropy (PMA), and voltage-controlled magnetic anisotropy (VCMA), remains elusive. Here, using high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy, we found that the MTJ crystallization quality, boron diffusion out of the CoFeB fixed layer, and minimal oxidation of the fixed layer correlate with the TMR. As with the CoFeB free layer, seed layer diffusion into the free layer/MgO interface is negatively correlated with the interfacial PMA, whereas the metal-oxides concentrations in the free layer correlate with the VCMA. Combined with formation enthalpy and thermal diffusion analysis that can explain the evolution of element distribution from MTJ stack designs and annealing temperatures, we further established a predictive materials design framework to guide the complex design space explorations for high-performance MTJs. On the basis of this framework, we demonstrate experimentally high PMA and VCMA values of 1.74 mJ/m² and 115 fJ/V·m^-1 with annealing stability above 400 °C.

Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe₂/MoS₂ heterojunction, where the VSe₂ monolayer acts as a ferromagnet with room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS₂, SOT is promising for the magnetization switching of VSe₂ free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe₂/MoS₂ provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.

Spin Filtering in CrI3 Tunnel Junctions

The recently discovered magnetism of two-dimensional (2D) van der Waals crystals has attracted a lot of attention. Among these materials is CrI₃, a magnetic semiconductor, exhibiting transitions between ferromagnetic and antiferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of face-centered cubic Cu(111) electrodes and a CrI₃ tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically ordered four-monolayer CrI₃ and a tunneling magnetoresistance of about 3000% associated with a change of magnetic ordering in CrI₃. This behavior is understood in terms of the spin and wave-vector-dependent evanescent states in CrI₃, which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI₃, which adds new features to the mechanism of spin filtering in CrI₃-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI₃ tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals.

Ultrathin Scale Tailoring of Anisotropic Magnetic Coupling and Anomalous Magnetoresistance in SrRuO3-PrMnO3 Superlattices

A strong perpendicular magnetocrystalline anisotropy (PMA) in antiferromagnetically coupled SrRuO₃(17 uc (unit cell))/PrMnO₃( n uc) superlattices effectively reconstructs the interfacial spin ordering. The occurrence of significant anisotropic interfacial antiferromagnetic coupling between the Ru and Mn ions is systematically tuned by varying the PrMnO₃ layer thickness in ultrathin scale from 3 to 12 uc, which is associated with a rise in PMA energy from 0.28 × 10⁶ to 1.60 × 10⁶ erg/cm³. The analysis using the Stoner-Wohlfarth model and density functional theory confirm that the exchange anisotropy is the major contribution to the PMA. The superlattices with PrMnO₃ layer thickness ≥7 uc exhibit the tunneling-like transport of Ru 4d electrons, which is rather expected in the stronger antiferromagnetically coupled superlattices with thinner PrMnO₃ layer. Tunneling-like transport at thicker spacer layer in the SrRuO₃-PrMnO₃ superlattice system is an unique feature of two ferromagnet-based superlattices. Our investigations show that the technologically important interfacial magnetic coupling, PMA, and tunneling magnetoresistance could be achieved in a periodically stacked bilayer and can be precisely manipulated by the size effect in ultrathin scale.

Magnetoresistance in Co-hBN-NiFe Tunnel Junctions Enhanced by Resonant Tunneling through Single Defects in Ultrathin hBN Barriers

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modeling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door toward exploiting the spin degree of freedom in current studies of point defects as quantum emitters.

Tunneling Spin Valves Based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals Heterostructures

Thin van der Waals (vdW) layered magnetic materials hold the possibility of realizing vdW heterostructures with new functionalities. Here, we report on the realization and investigation of tunneling spin valves based on van der Waals heterostructures consisting of an atomically thin hBN layer acting as tunnel barrier and two exfoliated Fe₃GeTe₂ crystals acting as ferromagnetic electrodes. Low-temperature anomalous Hall effect measurements show that thin Fe₃GeTe₂ crystals are metallic ferromagnets with an easy axis perpendicular to the layers and a very sharp magnetization switching at magnetic field values that depends slightly on their geometry. In Fe₃GeTe₂/hBN/Fe₃GeTe₂ heterostructures, we observe textbook behavior of the tunneling resistance, which is minimum (maximum) when the magnetization in the two electrodes is parallel (antiparallel) to each other. The magnetoresistance is 160% at low temperature, from which we determine the spin polarization of Fe₃GeTe₂ to be 0.66, corresponding to 83% and 17% of the majority and minority carriers, respectively. The measurements also show that, with increasing temperature, the evolution of the spin polarization extracted from the tunneling magnetoresistance is proportional to the temperature dependence of the magnetization extracted from the analysis of the anomalous Hall conductivity. This suggests that the magnetic properties of the surface are representative of those of the bulk, as may be expected for vdW materials.

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors

As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz∙V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz∙V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range.

Flexible MgO Barrier Magnetic Tunnel Junctions

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.

Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn-Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.

Tunneling magnetoresistance from a symmetry filtering effect

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.