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Ma S, Li G, Li Z, Wang T, Zhang Y, Li N, Chen H, Zhang N, Liu W, Huang Y. Negative Photoconductivity of Fe 3GeTe 2 Crystal with Native Heterostructure for Ultraviolet to Terahertz Ultra-Broadband Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305709. [PMID: 38207342 DOI: 10.1002/adma.202305709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 12/10/2023] [Indexed: 01/13/2024]
Abstract
Gaining insight into the photoelectric behavior of ferromagnetic materials is significant for comprehensively grasping their intrinsic properties and broadening future application fields. Here, through a specially designed Fe3GeTe2/O-Fe3GeTe2 heterostructure, first, the broad-spectrum negative photoconductivity phenomenon of ferromagnetic nodal line semimetal Fe3GeTe2 is reported that covers UV-vis-infrared-terahertz bands (355 nm to 3000 µm), promising to compensate for the inadequacies of traditional optoelectronic devices. The significant suppression of photoexcitation conductivity is revealed to arise from the semimetal/oxidation (sMO) interface-assisted dual-response mechanism, in which the electron excitation origins from the semiconductor photoconductivity effect in high-energy photon region, and semimetal topological band-transition in low-energy photon region. High responsivities ranging from 103 to 100 mA W-1 are acquired within ultraviolet-terahertz bands under ±0.1 V bias voltage at room temperature. Notably, the responsivity of 2.572 A W-1 at 3000 µm (0.1 THz) and the low noise equivalent power of 26 pW Hz-1/2 surpass most state-of-the-art mainstream terahertz detectors. This research provides a new perspective for revealing the photoelectric conversion properties of Fe3GeTe2 crystal and paves the way for the development of spin-optoelectronic devices.
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Affiliation(s)
- Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Tingyuan Wang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Ningning Li
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Haisheng Chen
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Nan Zhang
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Weiwei Liu
- Institute of Modern Optics, Key Laboratory of Optical Information Science and Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
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2
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Li J, Li Q, Mi J, Xu Z, Xie Y, Tang W, Zhu H, Li L, Tong L. Ultrabroadband High Photoresponsivity at Room Temperature Based on Quasi-1D Pseudogap System (TaSe 4 ) 2 I. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2302886. [PMID: 38064179 PMCID: PMC10870056 DOI: 10.1002/advs.202302886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 11/21/2023] [Indexed: 02/17/2024]
Abstract
Narrow bandgap materials have garnered significant attention within the field of broadband photodetection. However, the performance is impeded by diminished absorption near the bandgap, resulting in a rapid decline in photoresponsivity within the mid-wave infrared (MWIR) and long-wave infrared (LWIR) regions. Furthermore, they mostly worked in cryogenic temperature. Here, without the assistance of any complex structure and special environment, it is realized high responsivity covering ultra-broadband wavelength range (Ultraviolet (UV) to LWIR) in a single quasi-1D pseudogap (PG) system (TaSe4 )2 I nanoribbon, especially high responsivity (From 23.9 to 8.31 A W-1 ) within MWIR and LWIR region at room temperature (RT). Through direct probing the carrier relaxation process with broadband time-resolved transient absorption spectrum measurement, the underlying mechanism of majorly photoconductive effect is revealed, which causes an increased spectral weight extended to PG region. This work paves the way for realizing high-performance uncooled MWIR and LWIR detection by using quasi-1D PG materials.
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Affiliation(s)
- Jialin Li
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Qing Li
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Junjian Mi
- Zhejiang Province Key Laboratory of Quantum Technology and DeviceDepartment of PhysicsZhejiang UniversityHangzhou310027China
| | - Zhuan Xu
- Zhejiang Province Key Laboratory of Quantum Technology and DeviceDepartment of PhysicsZhejiang UniversityHangzhou310027China
| | - Yu Xie
- Research Center for Humanoid SensingZhejiang LabHangzhou311100China
| | - Wei Tang
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Huanfeng Zhu
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Intelligent Optics and Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing314000China
- Jiaxing Key Laboratory of Photonic Sensing and Intelligent ImagingJiaxing Institute Zhejiang UniversityJiaxing314000China
| | - Linjun Li
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
- Intelligent Optics and Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing314000China
- Jiaxing Key Laboratory of Photonic Sensing and Intelligent ImagingJiaxing Institute Zhejiang UniversityJiaxing314000China
| | - Limin Tong
- State Key Laboratory of Modern Optical InstrumentationCollege of Optical Science and EngineeringZhejiang UniversityHangzhou310027China
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3
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Xiong Y, Chen T, Feng W. Broadband high-performance vertical WS 1.08Se 0.92/Si heterojunction photodetector with MXene electrode. NANOTECHNOLOGY 2023; 35:025201. [PMID: 37797612 DOI: 10.1088/1361-6528/ad005a] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Accepted: 10/05/2023] [Indexed: 10/07/2023]
Abstract
Vertical semiconductor van der Waals heterojunctions are essential for fabricating high-performance photodetectors. However, the range of the spectral response and defect states of semiconductor materials are two critical factors affecting the performance of photodetectors. In this work, the spectral response range of WS2was changed through WS2band gap regulation, and a self-powered vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode was prepared by synthesizing WS1.08Se0.92film on Si substrate and vertically stacking Ti3C2TxMXene on the film. Due to the electron collection of MXene and the wonderful junction quality of WS1.08Se0.92/Si, the photodetector can detect near-infrared light in the range of 980-1310 nm, which exceed the detection limit of WS1.08Se0.92. And the device had high sensitivity in the broadband. The responsivity was 4.58 A W-1, the specific detectivity was 4.58 × 1011Jones, the on/off ratio was 4.95 × 103, and the fast response time was 9.81/9.03μs. These properties are superior to previously reported WS2-based photodetectors. Vertical structure, Energy band tuning, and MXene electrode provide a new idea for preparing broadband high-performance and self-powered photodetector.
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Affiliation(s)
- Yuexu Xiong
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Taihong Chen
- School of Physics and Astronomy, China West Normal University, Nanchong 637009, People's Republic of China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, People's Republic of China
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Rogalski A, Kopytko M, Hu W, Martyniuk P. Infrared HOT Photodetectors: Status and Outlook. SENSORS (BASEL, SWITZERLAND) 2023; 23:7564. [PMID: 37688032 PMCID: PMC10490682 DOI: 10.3390/s23177564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 08/23/2023] [Accepted: 08/25/2023] [Indexed: 09/10/2023]
Abstract
At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.
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Affiliation(s)
- Antoni Rogalski
- Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland; (A.R.); (M.K.)
| | - Małgorzata Kopytko
- Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland; (A.R.); (M.K.)
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China;
| | - Piotr Martyniuk
- Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland; (A.R.); (M.K.)
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5
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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6
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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7
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Li J, Wang L, Chen Y, Li Y, Zhu H, Li L, Tong L. Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:147. [PMID: 36616059 PMCID: PMC9824543 DOI: 10.3390/nano13010147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 12/25/2022] [Accepted: 12/26/2022] [Indexed: 06/17/2023]
Abstract
Interface interactions in 2D vertically stacked heterostructures play an important role in optoelectronic applications, and photodetectors based on graphene/InSe heterostructures show promising performance nowadays. However, nonlinear optical property studies based on the graphene/InSe heterostructure are insufficient. Here, we fabricated a graphene/InSe heterostructure by mechanical exfoliation and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface was confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by the built-in electric potential (~286 meV) and broadband nonlinear absorption, the application of the graphene/InSe heterostructure in a mode-locked laser was realized. Our work not only provides a deeper understanding of the dipole orientation-related interface interactions on the photoexcited charge transfer of graphene/InSe heterostructures, but also enriches the saturable absorber family for ultrafast photonics application.
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Affiliation(s)
- Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Lizhen Wang
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yuzhong Chen
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yujie Li
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Haiming Zhu
- Center for Chemistry of High-Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
| | - Limin Tong
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute, Zhejiang University, Jiaxing 314000, China
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8
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Wang G, Han B, Mak CH, Liu J, Liu B, Liu P, Hao X, Wang H, Ma S, Xu B, Hsu HY. Mixed-Dimensional van der Waals Heterostructure for High-Performance and Air-Stable Perovskite Nanowire Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55183-55191. [PMID: 36469437 DOI: 10.1021/acsami.2c15139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
An organic-inorganic hybrid perovskite nanowire (NW), CH3NH3PbI3, shows great potential for high-performance photodetectors due to its excellent photoresponse. However, the inefficient carrier collection between the one-dimensional (1D) NWs and metallic electrodes, as well as degradation of the perovskite, limits the viability of the CH3NH3PbI3 NWs for commercial production. Here, we demonstrate a photodetector with a mixed-dimensional van der Waals heterostructure of hexagonal boron nitride (hBN)/graphene (Gr)/1D CH3NH3PbI3, which exhibits excellent responsivity and specific detectivity of up to 558 A/W and 2.3 × 1012 Jones, owing to the improved carrier extraction at the electrical contact between Gr and the NW. As for the atomic encapsulation of hBN, the device is extremely robust and maintains its outstanding performance for more than 2 months when exposed to air. Moreover, benefitting from the 1D geometry of the CH3NH3PbI3 NW, our device is highly sensitive to polarized light. The mixed-dimensional van der Waals heterostructure, hBN/Gr/1D CH3NH3PbI3, would provide a novel idea and protocol for fabricating high-performance and air-stable photoelectronic devices based on organic-inorganic hybrid perovskite NWs.
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Affiliation(s)
- Guanghui Wang
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bin Han
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Chun Hong Mak
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
| | - Jialong Liu
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bo Liu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Peng Liu
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Xiaodong Hao
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Shufang Ma
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bingshe Xu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hsien-Yi Hsu
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
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9
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Li Y, Chen G, Zhao S, Liu C, Zhao N. Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor. SCIENCE ADVANCES 2022; 8:eabq0187. [PMID: 36149950 PMCID: PMC9506725 DOI: 10.1126/sciadv.abq0187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Accepted: 08/05/2022] [Indexed: 06/16/2023]
Abstract
The gain-bandwidth trade-off limits the development of high-performance photodetectors; i.e., the mutual restraint between the response speed and gain has intrinsically limited performance optimization of photomultiplication phototransistors and photodiodes. Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. By eliminating deep-trap defects through processing optimization, we achieved devices with a maximum responsivity close to 6 × 104 A/W, a specific detectivity (D*) of 1.06 × 1013 Jones, and an f3dB of 1.2 MHz at a low driving voltage of 3 V. As a result, a record gain-bandwidth product is achieved. The device further exhibits the advantage in photoplethysmography detection with weak illuminations, where our device accurately detects the detailed features that are out of the capability of conventional photodetectors.
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Affiliation(s)
- Yuanzhe Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR 999077, China
| | - Guowei Chen
- The State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Techology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Shenghe Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR 999077, China
| | - Chuan Liu
- The State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Techology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR 999077, China
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10
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Uddin MG, Das S, Shafi AM, Khayrudinov V, Ahmed F, Fernandez H, Du L, Lipsanen H, Sun Z. Engineering the Dipole Orientation and Symmetry Breaking with Mixed-Dimensional Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200082. [PMID: 35532325 PMCID: PMC9284189 DOI: 10.1002/advs.202200082] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Revised: 03/31/2022] [Indexed: 05/27/2023]
Abstract
Engineering of the dipole and the symmetry of materials plays an important role in fundamental research and technical applications. Here, a novel morphological manipulation strategy to engineer the dipole orientation and symmetry of 2D layered materials by integrating them with 1D nanowires (NWs) is reported. This 2D InSe -1D AlGaAs NW heterostructure example shows that the in-plane dipole moments in InSe can be engineered in the mixed-dimensional heterostructure to significantly enhance linear and nonlinear optical responses (e.g., photoluminescence, Raman, and second harmonic generation) with an enhancement factor of up to ≈12. Further, the 1D NW can break the threefold rotational symmetry of 2D InSe, leading to a strong optical anisotropy of up to ≈65%. These results of engineering dipole orientation and symmetry breaking with the mixed-dimensional heterostructures open a new path for photonic and optoelectronic applications.
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Affiliation(s)
- Md Gius Uddin
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Susobhan Das
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Abde Mayeen Shafi
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Vladislav Khayrudinov
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Faisal Ahmed
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Henry Fernandez
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Luojun Du
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Harri Lipsanen
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
| | - Zhipei Sun
- Department of Electronics and NanoengineeringAalto UniversityTietotie 3EspooFI‐02150Finland
- QTF Centre of ExcellenceDepartment of Applied PhysicsAalto UniversityAaltoFI‐00076Finland
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11
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Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study. MATERIALS 2022; 15:ma15124084. [PMID: 35744141 PMCID: PMC9230885 DOI: 10.3390/ma15124084] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 05/30/2022] [Accepted: 06/06/2022] [Indexed: 02/05/2023]
Abstract
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.
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12
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First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide. JOURNAL OF COMPOSITES SCIENCE 2022. [DOI: 10.3390/jcs6060163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivity and absorption spectra are calculated in the wavelength range of 200–2000 nm. It is revealed that the BlueP monolayer makes the greatest contribution to the formation of the profiles the dynamic conductivity and absorption coefficient spectrums of the ZnO/BlueP/ZnO heterostructure. This is indicated by the fact that, for the ZnO/BlueP/ZnO heterostructure, conductivity anisotropy is observed at different directions of wave polarization, as for blue phosphorus. It has been established that the absorption maximum of the heterostructure falls in the middle ultraviolet range, and, starting from a wavelength of 700 nm, there is a complete absence of absorption. The type of layer packing has practically no effect on the regularities in the formation of the spectra of dynamic conductivity and the absorption coefficient, which is important from the point of view of their application in optoelectronics.
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13
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Chen C, Dong N, Huang J, Wang Z, Wang J. Microscopic optical nonlinearities and transient carrier dynamics in indium selenide nanosheet. OPTICS EXPRESS 2022; 30:17967-17979. [PMID: 36221607 DOI: 10.1364/oe.459023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 04/27/2022] [Indexed: 06/16/2023]
Abstract
This work systematically investigates the third-order nonlinear optical (NLO) properties and ultrafast carrier dynamics of layered indium selenide (InSe) obtained by mechanical exfoliation (ME). The two-photon absorption (TPA) effect of layered InSe was tested using micro-Z/I-scan techniques. The results indicate that InSe flakes undergo the TPA response under the excitation of both 520 nm and 1040 nm fs pulses, and that InSe is more likely to achieve TPA saturation under visible light excitation. Furthermore, ultrafast carrier dynamics revealed that InSe flakes in the visible region undergo a transition from photoinduced absorption to photobleaching and exhibit a fast recombination time of ∼0.4-1ps, suggesting a high optical modulation speed as high as ∼1-2.5 THz.
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14
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Bao L, Huang L, Guo H, Gao HJ. Construction and physical properties of low-dimensional structures for nanoscale electronic devices. Phys Chem Chem Phys 2022; 24:9082-9117. [PMID: 35383791 DOI: 10.1039/d1cp05981e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.
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Affiliation(s)
- Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Li Huang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hui Guo
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, P. R. China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
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15
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Liao L, Wu B, Kovalska E, Oliveira FM, Azadmanjiri J, Mazánek V, Valdman L, Spejchalová L, Xu C, Levinský P, Hejtmánek J, Sofer Z. InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors. NANOSCALE 2022; 14:5412-5424. [PMID: 35319556 DOI: 10.1039/d1nr07150e] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials with tunable heterostructures and superior optoelectronic properties have opened a new platform for various applications, e.g., field-effect transistors, ultrasensitive photodetectors and photocatalysts. In this work, an InSe/InSe(Ge) (germanium doped InSe) vdW heterostructure is designed to improve the photoresponse performance of sole InSe in a photoelectrochemical (PEC)-type photodetector. Photoelectrochemical measurements demonstrated that this heterostructure has excellent photoresponse characteristics, including a photocurrent density of 9.8 μA cm-2, a photo-responsivity of 64 μA W-1, and a response time/recovery time of 0.128 s/0.1 s. Moreover, the measurements also revealed the self-powering capability and long-term cycling stability of this heterostructure. The electronic properties of the prepared pure and Ge-doped single crystals unveiled a negative and temperature-independent thermoelectric power and temperature-activated resistivity. The negative character of dominating charge carriers was confirmed by Hall measurements, which corroborated by electrical resistivity revealed a carrier concentration below ∼1015 cm-3 and an electron mobility of ∼500 cm2 V-1 s-1 in Ge-doped crystals. Additionally, the Mott-Schottky model explored the mechanism of charge transfer and enhanced PEC performance. Band bending at the InSe/InSe(Ge)-electrolyte interface benefits the separation and transformation of photogenerated carriers from the heterostructure to electrolyte due to the tunable energy band alignment. These results indicate that the InSe/InSe(Ge) vdW heterostructure is promising for PEC-type photodetectors, which provide a novel way to utilize 2D vdW heterostructures in optoelectronics.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Bing Wu
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Evgeniya Kovalska
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Filipa M Oliveira
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Jalal Azadmanjiri
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Vlastimil Mazánek
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Lukáš Valdman
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Lucie Spejchalová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
| | - Cunyun Xu
- Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, P. R. China
| | - Petr Levinský
- FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic
| | - Jiří Hejtmánek
- FZU - Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
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16
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Sui F, Jin M, Zhang Y, Hong J, Cheng Y, Qi R, Yue F, Huang R. Atomic insights into the influence of Bi doping on the optical properties of two-dimensional van der Waals layered InSe. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:224006. [PMID: 35290970 DOI: 10.1088/1361-648x/ac5e07] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
As a narrow-gap semiconductor, III-VI two-dimensional (2D) van der Waals layered indium selenide (InSe) has attracted a lot of attention due to excellent physical properties. For potential optoelectronic applications, the tunability of the optical property is challenging, e.g., the modulation of optical bandgap commonly by element doping. However, the deep understanding of the influence of element doping on the microstructure and the optical properties lacks of systematic investigation. In this work, by using aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, we investigate the influence of Bi doping on controlling of the microstructure and optical properties of InSe single crystal in detail. The results show that Bi doping can introduce additional stacking faults in InSe single crystal, and more importantly, the atomic spacing and lattice constant of Bi-doped InSe are changed a lot as compared to that of the undoped one. Further optical characterizations including photoluminescence and transmission spectra reveal that Bi-doping can broaden the transmission wavelength range of InSe and make its optical bandgap blue-shift, which can also be physically interpreted from the doping-induced structure change. Our work expands new ideas for the optical property modulation of 2D thin-layer materials and brings new possibilities for the development of thin-layer InSe optical devices.
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Affiliation(s)
- Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai 201306, People's Republic of China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Jin Hong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Physics and Electronic Science, East China Normal University, Shanghai 200062, People's Republic of China
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17
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 88] [Impact Index Per Article: 44.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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18
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Wu G, Chung HS, Bae TS, Cho J, Lee KC, Cheng HH, Coileáin CÓ, Hung KM, Chang CR, Wu HC. Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61799-61808. [PMID: 34927430 DOI: 10.1021/acsami.1c20499] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recombination of photogenerated electron-hole pairs dominates the photocarrier lifetime and then influences the performance of photodetectors and solar cells. In this work, we report the design and fabrication of band-aligned van der Waals-contacted photodetectors with atomically sharp and flat metal-semiconductor interfaces through transferred metal integration. A unity factor α is achieved, which is essentially independent of the wavelength of the light, from ultraviolet to near-infrared, indicating effective suppression of charge recombination by the device. The short-circuit current (0.16 μA) and open-circuit voltage (0.72 V) of the band-aligned van der Waals-contacted devices are at least 1 order of magnitude greater than those of band-aligned deposited devices and 2 orders of magnitude greater than those of non-band-aligned deposited devices. High responsivity, detectivity, and polarization sensitivity ratio of 283 mA/W, 6.89 × 1012 cm Hz1/2 W-1, and 3.05, respectively, are also obtained for the device at zero bias. Moreover, the efficient suppression of charge recombination in our air-stable self-powered photodetectors also results in a fast response speed and leads to polarization-sensitive performance.
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Affiliation(s)
- Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Hee-Suk Chung
- Jeonju Center, Korea Basic Science Institute, Jeonju 54896, Republic of Korea
| | - Tae-Sung Bae
- Jeonju Center, Korea Basic Science Institute, Jeonju 54896, Republic of Korea
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Kuo-Chih Lee
- Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Hung Hsiang Cheng
- Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Neubiberg 85579, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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19
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Ionic Transport Triggered by Asymmetric Illumination on 2D Nano-Membrane. Molecules 2021; 26:molecules26237078. [PMID: 34885657 PMCID: PMC8658790 DOI: 10.3390/molecules26237078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 11/16/2021] [Accepted: 11/19/2021] [Indexed: 11/17/2022] Open
Abstract
Ionic transport and ion sieving are important in the field of separation science and engineering. Based on the rapid development of nanomaterials and nano-devices, more and more phenomena occur on the nanoscale devices in the field of thermology, optics, mechanics, etc. Recently, we experimentally observed a novel ion transport phenomenon in nanostructured graphene oxide membrane (GOM) under asymmetric illumination. We first build a light-induced carriers’ diffusion model based on our previous experimental results. This model can reveal the light-induced ion transport mechanism and predict the carriers’ diffusion behavior under different operational situations and material characters. The voltage difference increases with the rise of illuminate asymmetry, photoresponsivity, recombination coefficient, and carriers’ diffusion coefficient ratio. Finally, we discuss the ion transport behavior with different surface charge densities using MD simulation. Moderate surface charge decreases the ion transport with the same type of charge due to the electrostatic repulsion; however, excess surface charge blocks both cation and anion because a thicker electrical double layer decreases effective channel height. Research here provides referenced operational and material conditions to obtain a greater voltage difference between the membrane sides. Also, the mechanism of ion transport and ion sieving can guide us to modify membrane material according to different aims.
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20
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Jiang Y, He A, Zhao R, Chen Y, Liu G, Lu H, Zhang J, Zhang Q, Wang Z, Zhao C, Long M, Hu W, Wang L, Qi Y, Gao J, Wu Q, Ge X, Ning J, Wee ATS, Qiu CW. Coexistence of Photoelectric Conversion and Storage in van der Waals Heterojunctions. PHYSICAL REVIEW LETTERS 2021; 127:217401. [PMID: 34860083 DOI: 10.1103/physrevlett.127.217401] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2020] [Revised: 06/02/2021] [Accepted: 09/27/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, have great potential for the development of ecofriendly and high-efficiency nanodevices, which shows valuable applications as photovoltaic cells, photodetectors, etc. However, the coexistence of photoelectric conversion and storage in a single device has not been achieved until now. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe_{2} layer and quasi-2D electron gas. After an optical illumination, the device stores the light-generated carriers for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs occurs at the end of their lifetime; in contrast, infinite-lifetime photocarriers can be generated and stored in CPC devices without recombination. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-photocarrier states below the critical temperature reaches as high as 10^{9}, with an external quantum efficiency of 93.8% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path toward the high-efficiency devices for photoelectric conversion and storage.
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Affiliation(s)
- Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Anpeng He
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Yu Chen
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Guozhen Liu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Hao Lu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Qing Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Zhuo Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Chen Zhao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Mingshen Long
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Yaping Qi
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA
| | - Ju Gao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
- School for Optoelectronic Engineering, Zaozhuang University, Shandong 277160, China
| | - Quanying Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People's Republic of China
| | - Xiaotian Ge
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiqiang Ning
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Suzhou, Jiangsu 215123, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117551, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
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21
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Bellani S, Bartolotta A, Agresti A, Calogero G, Grancini G, Di Carlo A, Kymakis E, Bonaccorso F. Solution-processed two-dimensional materials for next-generation photovoltaics. Chem Soc Rev 2021; 50:11870-11965. [PMID: 34494631 PMCID: PMC8559907 DOI: 10.1039/d1cs00106j] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Indexed: 12/12/2022]
Abstract
In the ever-increasing energy demand scenario, the development of novel photovoltaic (PV) technologies is considered to be one of the key solutions to fulfil the energy request. In this context, graphene and related two-dimensional (2D) materials (GRMs), including nonlayered 2D materials and 2D perovskites, as well as their hybrid systems, are emerging as promising candidates to drive innovation in PV technologies. The mechanical, thermal, and optoelectronic properties of GRMs can be exploited in different active components of solar cells to design next-generation devices. These components include front (transparent) and back conductive electrodes, charge transporting layers, and interconnecting/recombination layers, as well as photoactive layers. The production and processing of GRMs in the liquid phase, coupled with the ability to "on-demand" tune their optoelectronic properties exploiting wet-chemical functionalization, enable their effective integration in advanced PV devices through scalable, reliable, and inexpensive printing/coating processes. Herein, we review the progresses in the use of solution-processed 2D materials in organic solar cells, dye-sensitized solar cells, perovskite solar cells, quantum dot solar cells, and organic-inorganic hybrid solar cells, as well as in tandem systems. We first provide a brief introduction on the properties of 2D materials and their production methods by solution-processing routes. Then, we discuss the functionality of 2D materials for electrodes, photoactive layer components/additives, charge transporting layers, and interconnecting layers through figures of merit, which allow the performance of solar cells to be determined and compared with the state-of-the-art values. We finally outline the roadmap for the further exploitation of solution-processed 2D materials to boost the performance of PV devices.
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Affiliation(s)
- Sebastiano Bellani
- BeDimensional S.p.A., Via Lungotorrente Secca 30R, 16163 Genova, Italy.
- Istituto Italiano di Tecnologia, Graphene Labs, via Moreogo 30, 16163 Genova, Italy
| | - Antonino Bartolotta
- CNR-IPCF, Istituto per i Processi Chimico-Fisici, Via F. Stagno D'alcontres 37, 98158 Messina, Italy
| | - Antonio Agresti
- CHOSE - Centre for Hybrid and Organic Solar Energy, University of Rome "Tor Vergata", via del Politecnico 1, 00133 Roma, Italy
| | - Giuseppe Calogero
- CNR-IPCF, Istituto per i Processi Chimico-Fisici, Via F. Stagno D'alcontres 37, 98158 Messina, Italy
| | - Giulia Grancini
- University of Pavia and INSTM, Via Taramelli 16, 27100 Pavia, Italy
| | - Aldo Di Carlo
- CHOSE - Centre for Hybrid and Organic Solar Energy, University of Rome "Tor Vergata", via del Politecnico 1, 00133 Roma, Italy
- L.A.S.E. - Laboratory for Advanced Solar Energy, National University of Science and Technology "MISiS", 119049 Leninskiy Prosect 6, Moscow, Russia
| | - Emmanuel Kymakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University, Estavromenos 71410 Heraklion, Crete, Greece
| | - Francesco Bonaccorso
- BeDimensional S.p.A., Via Lungotorrente Secca 30R, 16163 Genova, Italy.
- Istituto Italiano di Tecnologia, Graphene Labs, via Moreogo 30, 16163 Genova, Italy
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22
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Lei T, Tu H, Lv W, Ma H, Wang J, Hu R, Wang Q, Zhang L, Fang B, Liu Z, Shi W, Zeng Z. Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe 2/InSe Heterostructure by a Photogating Effect. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50213-50219. [PMID: 34637265 DOI: 10.1021/acsami.1c12330] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe2/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from -1.76 × 104 to 5.48 × 104 A/W. Moreover, the photodetector possesses broadband photodetection (365-965 nm), an ultrahigh specific detectivity (D*) of 5.8 × 1013 Jones, an external quantum efficiency of 1.86 × 107%, and a rapid response time of 20.8 ms. The WSe2/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.
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Affiliation(s)
- Ting Lei
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huayao Tu
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Weiming Lv
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Haixin Ma
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Jiachen Wang
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Rui Hu
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qilitai Wang
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Like Zhang
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Bin Fang
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China
| | - Zhongyuan Liu
- State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China
| | - Wenhua Shi
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhongming Zeng
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China
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23
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Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C. In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes. NANOSCALE 2021; 13:16122-16130. [PMID: 34533169 DOI: 10.1039/d1nr03807a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional ferroelectric semiconductors (2DFeSs) have been attracting extensive research attention on account of their unique properties and versatile applications in random-access memory, digital signal processors, and neuromorphic computing. Germanium sulfide (GeS) is predicted as a typical 2DFeS with a large spontaneous polarization of 484 pC m-1. Furthermore, the moderate band gap equivalent to 1.63 eV of GeS provides it with significant potential to create a strong bulk photovoltage in the visible light range. However, the fabrication of chemically stable few-to-monolayer GeS has not been reported so far, owing to the strong interlayer force and high chemical reactivity of the surface. Herein we demonstrate a new method for fabricating high quality, air-stable, ultrathin GeS nanoflakes. The electrical characterization confirms the formation of few-layered GeS with a remarkable in-plane ferroelectric hysteresis, which is forbidden by the inversion symmetry in bulk GeS crystals. After applying a coercive field of about 18.1 kV cm-1, a switchable shift current can also be observed in the polarized GeS nanoflakes under light irradiation. To further enhance the photoresponsivity, few-layered InSe was transferred onto the GeS nanoflakes to form van der Waals ferroelectric diodes. The interfacial perturbation breaking the inversion symmetry results in the enhancement of robust dipoles in the GeS side along the interface, which can be tuned by the in-plane electric field. Overall, this work opens the door for exploring the low-dimensional ferroelectric memory and energy conversion applications based on 2D GeS nanoflakes and provides a deeper understanding of the photovoltaic mechanism with in-plane 2D ferroelectric diodes.
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Affiliation(s)
- Yong Yan
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Qunrui Deng
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Shasha Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3Ga, Canada
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 2a0023, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
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Ma Z, Li R, Xiong R, Zhang Y, Xu C, Wen C, Sa B. InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening. MATERIALS 2021; 14:ma14143768. [PMID: 34300687 PMCID: PMC8306732 DOI: 10.3390/ma14143768] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Revised: 06/30/2021] [Accepted: 07/01/2021] [Indexed: 11/22/2022]
Abstract
Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way.
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Affiliation(s)
- Zechen Ma
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Ruifeng Li
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Rui Xiong
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Yinggan Zhang
- College of Materials, Xiamen University, Xiamen 361005, China;
| | - Chao Xu
- Xiamen Talentmats New Materials Science & Technology Co., Ltd., Xiamen 361015, China;
| | - Cuilian Wen
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
- Correspondence: (C.W.); (B.S.)
| | - Baisheng Sa
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
- Correspondence: (C.W.); (B.S.)
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25
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Villalva J, Moreno-Da Silva S, Villa P, Ruiz-González L, Navío C, Garcia-Orrit S, Vega-Mayoral V, Cabanillas-González J, Castellanos-Gomez A, Giovanelli E, Pérez EM. Covalent modification of franckeite with maleimides: connecting molecules and van der Waals heterostructures. NANOSCALE HORIZONS 2021; 6:551-558. [PMID: 33889898 DOI: 10.1039/d1nh00147g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The building of van der Waals heterostructures and the decoration of 2D materials with organic molecules share a common goal: to obtain ultrathin materials with tailored properties. Performing controlled chemistry on van der Waals heterostructures would add an extra level of complexity, providing a pathway towards 2D-2D-0D mixed-dimensional heterostructures. Here we show that thiol-ene-like "click" chemistry can be used to decorate franckeite, a naturally occurring van der Waals heterostructure with maleimide reagents. ATR-IR and NMR analyses corroborate the Michael addition mechanism via the formation of a S-C covalent bond, while Raman and HR-TEM show that the SnS2-PbS alternating structure of franckeite is preserved, and suggest that SnS2 reacts preferentially, which is confirmed through XPS. We illustrate how this methodology can be used to add functional molecular moieties by decorating franckeite with porphyrins. UV-vis-NIR spectroscopy confirms that the chromophore ground state remains operative, showing negligible ground-state interactions with the franckeite. Excited-state interactions across the hybrid interface are revealed. Time-resolved photoluminescence confirms the presence of excited-state deactivation in the linked porphyrin ascribed to energy transfer to the franckeite.
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Affiliation(s)
- Julia Villalva
- IMDEA Nanociencia, c/Faraday 9, Campus de Cantoblanco, Madrid 28049, Spain.
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26
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Wu D, Guo J, Wang C, Ren X, Chen Y, Lin P, Zeng L, Shi Z, Li XJ, Shan CX, Jie J. Ultrabroadband and High-Detectivity Photodetector Based on WS 2/Ge Heterojunction through Defect Engineering and Interface Passivation. ACS NANO 2021; 15:10119-10129. [PMID: 34024094 DOI: 10.1021/acsnano.1c02007] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS2), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS2 and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS2/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS2 induced by the vacancy defects, the effective surface modification with an ultrathin AlOx layer, and the well-designed vertical n-n heterojunction structure, the WS2/AlOx/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 1011 Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS2-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.
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Affiliation(s)
- Di Wu
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiawen Guo
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chaoqiang Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Xiaoyan Ren
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongsheng Chen
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Pei Lin
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhifeng Shi
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xin Jian Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chong-Xin Shan
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
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27
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Yao X, Zhang X. Electronic Structures of Twisted Bilayer InSe/InSe and Heterobilayer Graphene/InSe. ACS OMEGA 2021; 6:13426-13432. [PMID: 34056490 PMCID: PMC8158824 DOI: 10.1021/acsomega.1c01562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Accepted: 04/28/2021] [Indexed: 06/12/2023]
Abstract
Building vertical van der Waals heterojunctions between two-dimensional layered materials has become a promising strategy for modulating the properties of two-dimensional materials. Herein, we investigate the electronic structures of non-twisted/twisted bilayer InSe/InSe and heterobilayer graphene/InSe (Gr/InSe) by employing density functional theory calculations. For twisted bilayer InSe/InSes, their interlayer distances and band gaps are almost identical but a bit larger than those of the AB-stacking one due to the spontaneous polarization. Differently, the band gaps of twisted Gr/InSe are found to vary with the rotation angles. Our results provide an effective way to tune the electronic properties of two-dimensional materials.
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Affiliation(s)
- Xiaojing Yao
- Department
of Physics, Hebei Normal University, Shijiazhuang 050024, China
| | - Xiuyun Zhang
- College
of Physics Science and Technology, Yangzhou
University, Yangzhou 225002, China
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28
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Wang Z, Wang X, Chen Q, Wang X, Huang X, Huang W. Core@shell and lateral heterostructures composed of SnS and NbS 2. NANOSCALE 2021; 13:5489-5496. [PMID: 33687419 DOI: 10.1039/d0nr08415h] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The spatial arrangement of heterostructures based on two-dimensional layered materials is important in controlling their electronic and optoelectronic properties. In this contribution, by controlling the reaction kinetics and thus the nucleation and growth sequence of p-type SnS and metallic NbS2, controllable preparation of both SnS@NbS2 core@shell and SnS/NbS2 lateral heterostructures was realized. The SnS@NbS2 core@shell heterostructures were further applied in photodetectors, and interestingly, a negative photoresponse was observed due to the Seebeck effect exerted on the NbS2 shell. Compared with the pure metallic NbS2, the SnS@NbS2 core@shell heterostructures showed a 15 times increased signal-to-noise ratio and much improved photocurrent stability, largely due to the charge and heat transfer between the SnS core and NbS2 shell.
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Affiliation(s)
- Zhiwei Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China. and Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Xiang Wang
- Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Xiaoshan Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China. and Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Xiao Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China. and Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China. and Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China.
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29
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Yan Y, Li S, Du J, Yang H, Wang X, Song X, Li L, Li X, Xia C, Liu Y, Li J, Wei Z. Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:1903252. [PMID: 33643781 PMCID: PMC7887575 DOI: 10.1002/advs.201903252] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2019] [Revised: 09/27/2020] [Indexed: 05/19/2023]
Abstract
2D van der Waals heterostructures (vdWHs) offer tremendous opportunities in designing multifunctional electronic devices. Due to the ultrathin nature of 2D materials, the gate-induced change in charge density makes amplitude control possible, creating a new programmable unilateral rectifier. The study of 2D vdWHs-based reversible unilateral rectifier is lacking, although it can give rise to a new degree of freedom for modulating the output state. Here, a InSe/GeSe vdWH-FET is constructed as a gate-controllable half wave rectifier. The device exhibits stepless adjustment from forward to backward rectifying performance, leading to multiple operation states of output level. Near-broken band alignment in the InSe/GeSe vdWH-FET is a crucial feature for high-performance reversible rectifier, which is shown to have backward and forward rectification ratio of 1:38 and 963:1, respectively. Being further explored as a new bridge rectifier, the InSe/GeSe device has great potential in future gate-controllable alternating current/direct current convertor. These results indicate that 2D vdWHs with near-broken band alignment can offer a pathway to simplify the commutating circuit and regulating speed circuit.
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Affiliation(s)
- Yong Yan
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Shasha Li
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Juan Du
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of PhysicsPeking UniversityBeijing100871China
| | - Huai Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
| | - Xiaohui Song
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Lixia Li
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and ApplicationsHenan Normal UniversityXinxiang453007China
| | - Xueping Li
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Congxin Xia
- Henan Key Laboratory of Photovoltaic Materials, School of PhysicsHenan Normal UniversityXinxiang453007China
| | - Yufang Liu
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and ApplicationsHenan Normal UniversityXinxiang453007China
| | - Jingbo Li
- Institute of SemiconductorsSouth China Normal UniversityGuangzhou510631China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing100083China
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30
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An J, Wang B, Shu C, Wu W, Sun B, Zhang Z, Li D, Li S. Research development of 2D materials based photodetectors towards mid‐infrared regime. NANO SELECT 2020. [DOI: 10.1002/nano.202000237] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- Junru An
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Bin Wang
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Chang Shu
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Wenming Wu
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Zhiyu Zhang
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- Key Laboratory of Optical System Advanced Manufacturing Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China
| | - Dabing Li
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
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Mohanta MK, Kishore A, De Sarkar A. Two-dimensional ultrathin van der Waals heterostructures of indium selenide and boron monophosphide for superfast nanoelectronics, excitonic solar cells, and digital data storage devices. NANOTECHNOLOGY 2020; 31:495208. [PMID: 32975227 DOI: 10.1088/1361-6528/abaf20] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Semiconducting indium selenide (InSe) monolayers have drawn a great deal of attention among all the chalcogenide two-dimensional materials on account of their high electron mobility; however, they suffer from low hole mobility. This inherent limitation of an InSe monolayer can be overcome by stacking it on top of a boron phosphide (BP) monolayer, where the complementary properties of BP can bring additional benefits. The electronic, optical, and external perturbation-dependent electronic properties of InSe/BP hetero-bilayers have been systematically investigated within density functional theory in anticipation of its cutting-edge applications. The InSe/BP heterostructure has been found to be an indirect semiconductor with an intrinsic type-II band alignment where the conduction band minimum (CBM) and valence band maximum (VBM) are contributed by the InSe and BP monolayers, respectively. Thus, the charge carrier mobility in the heterostructure, which is mainly derived from the BP monolayer, reaches as high as 12 × 103 cm2 V-1 s-1, which is very much desired in superfast nanoelectronics. The suitable bandgap accompanied by a very low conduction band offset between the donor and acceptor along with robust charge carrier mobility, and the mechanical and dynamical stability of the heterostructure attests its high potential for applications in solar energy harvesting and nanoelectronics. The solar to electrical power conversion efficiency (20.6%) predicted in this work surpasses the efficiencies reported for InSe based heterostructures, thereby demonstrating its superiority in solar energy harvesting. Moreover, the heterostructure transits from the semiconducting state (the OFF state) to the metallic state (the ON state) by the application of a small electric field (∼0.15 V Å-1) which is brought about by the actual movement of the bands rather than via the nearly empty free electron gas (NFEG) feature. This thereby testifies to its potential for applications in digital data storage. Moreover, the heterostructure shows strong absorbance over a wide spectrum ranging from UV to the visible light of solar radiation, which will be of great utility in UV-visible light photodetectors.
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Affiliation(s)
- Manish Kumar Mohanta
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab, 160062, India
| | - Amal Kishore
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab, 160062, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab, 160062, India
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Shawkat MS, Chowdhury TA, Chung HS, Sattar S, Ko TJ, Larsson JA, Jung Y. Large-area 2D PtTe 2/silicon vertical-junction devices with ultrafast and high-sensitivity photodetection and photovoltaic enhancement by integrating water droplets. NANOSCALE 2020; 12:23116-23124. [PMID: 33188373 DOI: 10.1039/d0nr05670g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
2D PtTe2 layers, a relatively new class of 2D crystals, have unique band structure and remarkably high electrical conductivity promising for emergent opto-electronics. This intrinsic superiority can be further leveraged toward practical device applications by merging them with mature 3D semiconductors, which has remained largely unexplored. Herein, we explored 2D/3D heterojunction devices by directly growing large-area (>cm2) 2D PtTe2 layers on Si wafers using a low-temperature CVD method and unveiled their superior opto-electrical characteristics. The devices exhibited excellent Schottky transport characteristics essential for high-performance photovoltaics and photodetection, i.e., well-balanced combination of high photodetectivity (>1013 Jones), small photo-responsiveness time (∼1 μs), high current rectification ratio (>105), and water super-hydrophobicity driven photovoltaic improvement (>300%). These performances were identified to be superior to those of previously explored 2D/3D or 2D layer-based devices with much smaller junction areas, and their underlying principles were confirmed by DFT calculations.
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33
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Anandan M, Hsieh HF, Liu FC, Chen CY, Lee KY, Chao LC, Ho CH, Chen RS. High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2Se 3 nanosheet photodetectors. NANOTECHNOLOGY 2020; 31:465201. [PMID: 32845871 DOI: 10.1088/1361-6528/abac7e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (In2Se3) nanostructures with α-phase hexagonal structure were studied. The In2Se3 nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from 300 nm to 1000 nm. The In2Se3 nanosheets achieve optimal responsivity of 720 A W-1 in near-infrared region (808 nm), and detectivity of 2.2 × 1012 Jones, which were higher than several 2D material photodetectors. The physical origins that result in high photoresponse in In2Se3 nanosheets such as carrier lifetime and mobility were also characterized by time-resolved PC and field-effect transistor measurements. The fast (hundred microseconds to milliseconds) and slow (seconds and longer) current rise or decay processes were both observed during the photoresponse. The narrowing (or relaxation) of depletion region and oxygen-sensitized photoconduction mechanism were suggested to be the causes of the efficient photoresponse in the In2Se3 nanostructure detectors. All these observations suggest that α-In2Se3 nanosheets could be a promising candidate for photosensitive material applications.
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Affiliation(s)
- Manickam Anandan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
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Jiang P, Boulet P, Record MC. Structure-Property Relationships of 2D Ga/In Chalcogenides. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2188. [PMID: 33147839 PMCID: PMC7693234 DOI: 10.3390/nano10112188] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Revised: 10/27/2020] [Accepted: 10/27/2020] [Indexed: 01/12/2023]
Abstract
Two-dimensional MX (M = Ga, In; X = S, Se, Te) homo- and heterostructures are of interest in electronics and optoelectronics. Structural, electronic and optical properties of bulk and layered MX and GaX/InX heterostructures have been investigated comprehensively using density functional theory (DFT) calculations. Based on the quantum theory of atoms in molecules, topological analyses of bond degree (BD), bond length (BL) and bond angle (BA) have been detailed for interpreting interatomic interactions, hence the structure-property relationship. The X-X BD correlates linearly with the ratio of local potential and kinetic energy, and decreases as X goes from S to Te. For van der Waals (vdW) homo- and heterostructures of GaX and InX, a cubic relationship between microscopic interatomic interaction and macroscopic electromagnetic behavior has been established firstly relating to weighted absolute BD summation and static dielectric constant. A decisive role of vdW interaction in layer-dependent properties has been identified. The GaX/InX heterostructures have bandgaps in the range 0.23-1.49 eV, absorption coefficients over 10-5 cm-1 and maximum conversion efficiency over 27%. Under strain, discordant BD evolutions are responsible for the exclusively distributed electrons and holes in sublayers of GaX/InX. Meanwhile, the interlayer BA adjustment with lattice mismatch explains the constraint-free lattice of the vdW heterostructure.
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Affiliation(s)
- Pingping Jiang
- Aix-Marseille University, CNRS, MADIREL, 13013 Marseille, France;
| | - Pascal Boulet
- Aix-Marseille University, CNRS, MADIREL, 13013 Marseille, France;
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Nissimagoudar AS, Rashid Z, Ma J, Li W. Lattice Thermal Transport in Monolayer Group 13 Monochalcogenides MX (M = Ga, In; X = S, Se, Te): Interplay of Atomic Mass, Harmonicity, and Lone-Pair-Induced Anharmonicity. Inorg Chem 2020; 59:14899-14909. [PMID: 32993283 DOI: 10.1021/acs.inorgchem.0c01407] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
We perform a systematic study of the lattice dynamics and the lattice thermal conductivity, κ, of monolayer group 13 monochalcogenides MX (M = Ga, In; X = S, Se, Te) by combining an iterative solution for linearized phonon Boltzmann transport equation and density functional theory. Among the competing factors influencing κ, harmonic parameters along with the atomic masses dominate over anharmonicity. An increase in atomic mass leads to a decrease in phonon frequencies and phonon group velocities and consequently in κ. At T = 300 K, the calculated κ values are 54.9, 48.1, 44.3, 25.0, 22.3, and 17.3 W m-1 K-1 for GaS, InS, GaSe, InSe, GaTe, and InTe monolayers, respectively. Further analysis of anharmonic scattering rates and average scattering matrix elements evidences that the anharmonicity characterized by the third-order IFCs in GaS and InS are the largest among all monolayer group 13 monochalcogenides despite the largest κ values. This is attributed to a strong interaction between nonbonding lone-pair s electrons around the S atom and adjacent bonding electrons. In addition, the κ of these monolayers further reduces to 50% for sample sizes 300-400 nm. Our findings provide fundamental insights into thermal transport in monolayer group 13 monochalcogenides and should stimulate further experimental exploration of thermal transport in these materials for possible theromoelectric and thermal management applications.
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Affiliation(s)
- Arun S Nissimagoudar
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China.,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zahid Rashid
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China.,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jinlong Ma
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China.,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Wu Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
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Hao Q, Liu J, Dong W, Yi H, Ke Y, Tang S, Qi D, Zhang W. Visible to near-infrared photodetector with novel optoelectronic performance based on graphene/S-doped InSe heterostructure on h-BN substrate. NANOSCALE 2020; 12:19259-19266. [PMID: 32930698 DOI: 10.1039/d0nr04338a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
van der Waals heterostructures of two-dimensional (2D) materials have attracted considerable attention due to their flexibility in the design of new functional devices. Despite numerous studies on graphene/2D semiconductor heterostructures, their optoelectronic applications are significantly hindered because of several disadvantages, such as large band gaps and chemical instability. In this work, we demonstrate the fabrication of graphene/S-doped InSe heterostructure photodetectors with excellent photoresponse performance, and this is attributed to the moderate band gap and band gap engineering by element doping of InSe as well as the high carrier mobility of graphene. In particular, the graphene/InSe0.9S0.1 device achieves an ultrahigh photoresponsivity of ∼4.9 × 106 A W-1 at 700 nm and an EQE of 8.7 × 108%, and it exhibits broadband photodetection (visible to near-infrared). More importantly, by virtue of the interaction between n-type graphene arising from the influence of h-BN as a dielectric layer and S-doped InSe with a high work-function, our devices always exhibited positive photocurrent when the polarity of the gate voltage is adjusted, and is different from that the previously reported graphene/2D semiconductor photodetectors. This work not only provides a promising platform for highly efficient broadband photodetectors but also sheds light on tuning the optoelectronic performance through band gap engineering and designing novel heterostructures-based various 2D materials.
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Affiliation(s)
- Qiaoyan Hao
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Weilong Dong
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Huan Yi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Yuxuan Ke
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Sisi Tang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Dianyu Qi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, Shenzhen 518060, China.
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Pham VT, Fang TH. Effects of temperature and intrinsic structural defects on mechanical properties and thermal conductivities of InSe monolayers. Sci Rep 2020; 10:15082. [PMID: 32934331 PMCID: PMC7492280 DOI: 10.1038/s41598-020-72162-9] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2020] [Accepted: 08/26/2020] [Indexed: 11/08/2022] Open
Abstract
We conduct molecular dynamics simulations to study the mechanical and thermal properties of monolayer indium selenide (InSe) sheets. The influences of temperature, intrinsic structural defect on the tensile properties were assessed by tensile strength, fracture strain, and Young's modulus. We found that the tensile strength, fracture strain, and Young's modulus reduce as increasing temperature. The results also indicate that with the existence of defects, the stress is concentrated at the region around the vacancy leading to the easier destruction. Therefore, the mechanical properties were considerably decreased with intrinsic structural defects. Moreover, Young's modulus is isotropy in both zigzag and armchair directions. The point defect almost has no influence on Young's modulus but it strongly influences the ultimate strength and fracture strain. Besides, the effects of temperature, length size, vacancy defect on thermal conductivity (κ) of monolayer InSe sheets were also studied by using none-equilibrium molecular dynamics simulations. The κ significantly arises as increasing the length of InSe sheets. The κ of monolayer InSe with infinite length at 300 K in armchair direction is 46.18 W/m K, while in zigzag direction is 45.87 W/m K. The difference of κ values in both directions is very small, indicating the isotropic properties in thermal conduction of this material. The κ decrease as increasing the temperature. The κ goes down with the number of atoms vacancy defect increases.
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Affiliation(s)
- Van-Trung Pham
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan
- Institute of Research and Development, Duy Tan University, Danang, 550000, Vietnam
| | - Te-Hua Fang
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.
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38
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Liu L, Wu L, Wang A, Liu H, Ma R, Wu K, Chen J, Zhou Z, Tian Y, Yang H, Shen C, Bao L, Qin Z, Pantelides ST, Gao HJ. Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity. NANO LETTERS 2020; 20:6666-6673. [PMID: 32822183 DOI: 10.1021/acs.nanolett.0c02448] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to ∼10-14A in the InSe channel by tuning the three different polarization states in ferroelectric P(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14 250 AW-1, a high detectivity up to 1.63 × 1013 Jones, and a fast response time of 600 μs even at zero-gate voltage. The present results highlight the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.
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Affiliation(s)
- Li Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Liangmei Wu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Aiwei Wang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Hongtao Liu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Ruisong Ma
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Kang Wu
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Jiancui Chen
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Zhang Zhou
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Haitao Yang
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
| | - Chengmin Shen
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Lihong Bao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Sokrates T Pantelides
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Hong-Jun Gao
- Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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Rehman A, Park SJ. State of the art two-dimensional materials-based photodetectors: Prospects, challenges and future outlook. J IND ENG CHEM 2020. [DOI: 10.1016/j.jiec.2020.06.009] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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40
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Qin F, Gao F, Dai M, Hu Y, Yu M, Wang L, Feng W, Li B, Hu P. Multilayer InSe-Te van der Waals Heterostructures with an Ultrahigh Rectification Ratio and Ultrasensitive Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37313-37319. [PMID: 32814416 DOI: 10.1021/acsami.0c08461] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Multilayer van der Waals (vdWs) semiconductors have promising applications in high-performance optoelectronic devices. However, photoconductive photodetectors based on layered semiconductors often suffer from sizeable dark currents and high external driving bias voltages. Here, we report vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellurium (Te). The multilayer InSe-Te vdWH device shows a record high forward rectification ratio greater than 107 at room temperature. The vdWH device achieves an ultrasensitive and broadband photoresponse photodetector with an ultrahigh photo/dark current ratio over 104 and a high detectivity of 1013 Jones under visible light illumination with weak incident power. Moreover, the vdWH device has a photovoltaic effect and can function as a self-powered photodetector (SPPD). The SPPD is also ultrasensitive to a broadband spectrum ranging from 300 to 1000 nm and is capable of detecting weak light signals. This work offers an opportunity to develop next-generation electronic and optoelectronic devices based on multilayer vdWs materials.
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Affiliation(s)
- Fanglu Qin
- Key Laboratory of Forest Plant Ecology, Ministry of Education, Northeast Forestry University, Harbin 150040, China
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Feng Gao
- School of Materials and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Mingjin Dai
- School of Materials and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Yunxia Hu
- School of Materials and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Miaomiao Yu
- Key Laboratory of Forest Plant Ecology, Ministry of Education, Northeast Forestry University, Harbin 150040, China
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - Wei Feng
- Key Laboratory of Forest Plant Ecology, Ministry of Education, Northeast Forestry University, Harbin 150040, China
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
- Post-doctoral Mobile Research Station of Forestry Engineering, Northeast Forestry University, Harbin 150040, China
| | - Bin Li
- Key Laboratory of Forest Plant Ecology, Ministry of Education, Northeast Forestry University, Harbin 150040, China
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
- Post-doctoral Mobile Research Station of Forestry Engineering, Northeast Forestry University, Harbin 150040, China
| | - PingAn Hu
- School of Materials and Engineering, Harbin Institute of Technology, Harbin 150080, China
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41
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Li H, Zhou Z, Wang H. Tunable Schottky barrier in InTe/graphene van der Waals heterostructure. NANOTECHNOLOGY 2020; 31:335201. [PMID: 32348976 DOI: 10.1088/1361-6528/ab8e77] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The structures and electronic properties of InTe/graphene van der Waals heterostructures are systematically investigated using the first-principles calculations. The electronic properties of InTe monolayer and graphene are well preserved respectively and the bandgap energy of graphene is opened to 36.5 meV in the InTe/graphene heterostructure. An n-type Schottky contact is formed in InTe/graphene heterostructure at the equilibrium state. There is a transformation between n-type and p-type Schottky contact when the interlayer distance is smaller than 3.56 Å or the applied electric field is larger than -0.06 V Å-1. In addition, the Schottky contact converts to Ohmic contact when the applied vertical electric field is larger than 0.11 V Å-1 or smaller than -0.13 V Å-1.
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Affiliation(s)
- Hengheng Li
- Henan Key Laboratory of Photovoltaic Materials, and School of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
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42
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Sun Y, Li Y, Li T, Biswas K, Patanè A, Zhang L. New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties. ADVANCED FUNCTIONAL MATERIALS 2020; 30:2001920. [PMID: 32774197 PMCID: PMC7405953 DOI: 10.1002/adfm.202001920] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2020] [Revised: 04/22/2020] [Accepted: 04/23/2020] [Indexed: 05/05/2023]
Abstract
The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.
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Affiliation(s)
- Yuanhui Sun
- State Key Laboratory of Integrated OptoelectronicsKey Laboratory of Automobile Materials of MOE and College of Materials Science and EngineeringJilin UniversityChangchun130012China
| | - Yawen Li
- State Key Laboratory of Integrated OptoelectronicsKey Laboratory of Automobile Materials of MOE and College of Materials Science and EngineeringJilin UniversityChangchun130012China
| | - Tianshu Li
- State Key Laboratory of Integrated OptoelectronicsKey Laboratory of Automobile Materials of MOE and College of Materials Science and EngineeringJilin UniversityChangchun130012China
| | - Koushik Biswas
- Department of Chemistry and PhysicsArkansas State UniversityJonesboroAR72467USA
| | - Amalia Patanè
- School of Physics and AstronomyThe University of NottinghamNottinghamNG7 2RDUK
| | - Lijun Zhang
- State Key Laboratory of Integrated OptoelectronicsKey Laboratory of Automobile Materials of MOE and College of Materials Science and EngineeringJilin UniversityChangchun130012China
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43
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Dai M, Chen H, Wang F, Long M, Shang H, Hu Y, Li W, Ge C, Zhang J, Zhai T, Fu Y, Hu P. Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts. ACS NANO 2020; 14:9098-9106. [PMID: 32603084 DOI: 10.1021/acsnano.0c04329] [Citation(s) in RCA: 44] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Self-powered photodetectors with great potential for implanted medical diagnosis and smart communications have been severely hindered by the difficulty of simultaneously achieving high sensitivity and fast response speed. Here, we report an ultrafast and highly sensitive self-powered photodetector based on two-dimensional (2D) InSe, which is achieved by applying a device architecture design and generating ideal Schottky or ohmic contacts on 2D layered semiconductors, which are difficult to realize in the conventional semiconductors owing to their surface Fermi-level pinning. The as-fabricated InSe photodiode features a maximal lateral self-limited depletion region and a vertical fully depleted channel. It exhibits a high detectivity of 1.26 × 1013 Jones and an ultrafast response speed of ∼200 ns, which breaks the response speed limit of reported self-powered photodetectors based on 2D semiconductors. The high sensitivity is achieved by an ultralow dark current noise generated from the robust van der Waals (vdW) Schottky junction and a high photoresponsivity due to the formation of a maximal lateral self-limited depletion region. The ultrafast response time is dominated by the fast carrier drift driven by a strong built-in electric field in the vertical fully depleted channel. This device architecture can help us to design high-performance photodetectors utilizing vdW layered semiconductors.
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Affiliation(s)
| | | | - Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Mingsheng Long
- Institutes of Physical Science and Information Technology, Anhui University, Anhui 230601, People's Republic of China
| | | | | | | | | | | | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yongqing Fu
- Faculty of Engineering & Environment, Northumbria University, Newcastle upon Tyne, NE1 8ST, U.K
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44
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Beck ME, Hersam MC. Emerging Opportunities for Electrostatic Control in Atomically Thin Devices. ACS NANO 2020; 14:6498-6518. [PMID: 32463222 DOI: 10.1021/acsnano.0c03299] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
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Affiliation(s)
- Megan E Beck
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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45
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Mamedov RM. A New Way of Obtaining Ultrathin Films of Indium Selenide. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A 2020. [DOI: 10.1134/s0036024420060163] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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46
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Yu M, Gao F, Hu Y, Wang L, Hu P, Feng W. Tunable electronic properties of multilayer InSe by alloy engineering for high performance self-powered photodetector. J Colloid Interface Sci 2020; 565:239-244. [PMID: 31972337 DOI: 10.1016/j.jcis.2020.01.025] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2019] [Revised: 01/10/2020] [Accepted: 01/11/2020] [Indexed: 10/25/2022]
Abstract
Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful tool to tune properties of materials, alloy engineering is absent for multilayer InSe. In this letter, for the first time, we investigate the electrical property of InSe1-xTex alloys and optoelectronic property of InSe-InSe0.82Te0.18p-n heterojunction. The electrical transport properties of InSe1-xTex alloys strongly depend on the content of Te composition. With the ratio of Te/Se increasing, the n-type electron transport behavior of InSe gradually transfers to the p-type hole transport behavior of InSe0.82Te0.18. The p-n InSe-InSe0.82Te0.18 heterojunction shows a rectification effect and a self-powered photodetection. The self-powered photodetector (SPPD) has a broad photodetection range from visible light (400 nm) to near-infrared (NIR) light (1000 nm). The responsivity (R) of SPPD is 14.1 mA/W under illuminated by NIR light (900 nm) at zero bias, which is comparable to some of the 2D heterojunctions NIR photodetectors measured with an external bias. The SPPD also shows a stable and fast response to NIR light (900 nm). This work demonstrates that the electrical transport properties of InSe1-xTex alloys significantly rely on the ratio of Te/Se and suggests that InSe-InSe1-xTex p-n heterojunction has a excellent potential for application in the self-powered optoelectronic device.
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Affiliation(s)
- Miaomiao Yu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Feng Gao
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, China
| | - Yunxia Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, China
| | - Lifeng Wang
- Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia
| | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, China.
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China.
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47
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Ubrig N, Ponomarev E, Zultak J, Domaretskiy D, Zólyomi V, Terry D, Howarth J, Gutiérrez-Lezama I, Zhukov A, Kudrynskyi ZR, Kovalyuk ZD, Patané A, Taniguchi T, Watanabe K, Gorbachev RV, Fal'ko VI, Morpurgo AF. Design of van der Waals interfaces for broad-spectrum optoelectronics. NATURE MATERIALS 2020; 19:299-304. [PMID: 32015532 DOI: 10.1038/s41563-019-0601-3] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2019] [Accepted: 12/20/2019] [Indexed: 05/12/2023]
Abstract
Van der Waals (vdW) interfaces based on 2D materials are promising for optoelectronics, as interlayer transitions between different compounds allow tailoring of the spectral response over a broad range. However, issues such as lattice mismatch or a small misalignment of the constituent layers can drastically suppress electron-photon coupling for these interlayer transitions. Here, we engineered type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the Γ point, and thus avoid any momentum mismatch. We found that these van der Waals interfaces exhibit radiative optical transitions irrespective of the lattice constant, the rotational and/or translational alignment of the two layers or whether the constituent materials are direct or indirect gap semiconductors. Being robust and of general validity, our results broaden the scope of future optoelectronics device applications based on two-dimensional materials.
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Affiliation(s)
- Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
- Group of Applied Physics, University of Geneva, Geneva, Switzerland.
| | - Evgeniy Ponomarev
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Johanna Zultak
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Viktor Zólyomi
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Daniel Terry
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - James Howarth
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - Alexander Zhukov
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | | | - Zakhar D Kovalyuk
- Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Branch, Chernivtsi, Ukraine
| | - Amalia Patané
- School of Physics & Astronomy, The University of Nottingham, Nottingham, UK
| | | | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - Roman V Gorbachev
- National Graphene Institute, University of Manchester, Manchester, UK
- School of Physics & Astronomy, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, Manchester, UK
| | - Vladimir I Fal'ko
- National Graphene Institute, University of Manchester, Manchester, UK.
- School of Physics & Astronomy, University of Manchester, Manchester, UK.
- Henry Royce Institute for Advanced Materials, Manchester, UK.
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
- Group of Applied Physics, University of Geneva, Geneva, Switzerland.
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48
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Li Y, Ye J, Yuan K, Zhai G, Li T, Ye Y, Wu X, Zhang X. Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes. NANOTECHNOLOGY 2020; 31:095713. [PMID: 31731280 DOI: 10.1088/1361-6528/ab5835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Carrier relaxation dynamics of InSe flakes is investigated by using time-resolved pump-probe reflectivity measurement. The photocarriers associated with the P xy orbital band-edge transition at 2.40 eV, which is coupled to the in-plane polarized light, is observed to possess a lifetime of ∼19 ps at room temperature and ∼99 ps at 10 K. The temperature and power dependent carrier lifetime suggests that Shockley-Read-Hall process is the dominant nonradiative recombination mechanism responsible for the carrier relaxation. In addition, the electron scattering with a 14.5 meV optical phonon plays an active role in the carrier relaxation with increasing temperatures. A broad absorption around 1.65-1.90 eV is observed. The photocarriers associated with this broad transition show a long lifetime of ∼200 ps that is nearly independent of temperature and photon energy. This is indicative of bound carriers by defects. Our experimental results provide essential information for the characteristics of carrier dynamics and defects in InSe flakes. The experimental findings are fundamentally important for further development of microelectronics and optoelectronics based on InSe.
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Affiliation(s)
- Ying Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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49
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Liu X, Zhang Y, Feng H, Ning Y, Shi Y, Wang X, Yang F. Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles. ACS OMEGA 2020; 5:3000-3005. [PMID: 32095723 PMCID: PMC7033984 DOI: 10.1021/acsomega.9b03949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Accepted: 01/20/2020] [Indexed: 06/10/2023]
Abstract
In this work, we propose using periodic Au nanoparticles (NPs) in indium selenide-based optoelectronic devices to tune the optical absorption of indium selenide. Electromagnetic simulations show that optical absorption of indium selenide can be manipulated by tuning plasmonic resonance. The effect on the plasmonic resonance of the size, period of NPs, the thickness of silicon oxide, and the insulator spacer is systematically analyzed. A high absorption enhancement over the visible spectrum is achieved through systematic optimization of nanostructures.
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Affiliation(s)
- Xiaoyu Liu
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yifei Zhang
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Huayu Feng
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yafei Ning
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yanpeng Shi
- Center
of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China
| | - Xiaodong Wang
- Engineering
Research Center for Semiconductor Integrated Technology, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Fuhua Yang
- Engineering
Research Center for Semiconductor Integrated Technology, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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50
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Li YH, Zhang ZH, Fan ZQ, Zhou RL. Magneto-electronic properties, carrier mobility and strain effects of InSe nanoribbon. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:015303. [PMID: 31499486 DOI: 10.1088/1361-648x/ab4293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The monolayer InSe has been successfully fabricated recently and studied intensely. Here, we investigate the geometrical stability and various physical properties such as electronic and magnetic feature, carrier mobility and strain effects for InSe nanoribbons. Our calculations show that armchair nanoribbons, regardless of the bare-edged or H-saturated ones, are semiconductors with an indirect bandgaps, but the bandgap size is increased greatly by H-saturation. Their electron mobility is predicted to be moderately large (from ~102 to ~103 cm2 V-1 s-1) with the holes being less mobile for wider ribbons, and the carrier polarity phenomenon becomes more prominently for H-saturation. The zigzag InSe nanoribbons are found to be magnetic metals with a bigger magnetic moment and the ferromagnetic ground state at the single edge. The magnetism stems from unpaired electrons at the In-rich edge. More interestingly, it is found that the externally applied mechanical strain can effectively tune the spin polarization efficiency at the Fermi level to two stepwise stages, suggesting that the strain can act as a tool for developing a mechanical switch to control spin-polarized transport under lower bias. The detailed analysis suggests that this strain-tuning mechanism can be attributed to the ionic and covalent bond-configuration competition due to the strain-induced bond-length alterations, which leads to the unpaired electron redistribution in magnetic atoms or vanishing.
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Affiliation(s)
- Y H Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, People's Republic of China
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