Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Optical Phenomena in Molecule-Based Magnetic Materials

Since the last century, we have witnessed the development of molecular magnetism which deals with magnetic materials based on molecular species, i.e., organic radicals and metal complexes. Among them, the broadest attention was devoted to molecule-based ferro-/ferrimagnets, spin transition materials, including those exploring electron transfer, molecular nanomagnets, such as single-molecule magnets (SMMs), molecular qubits, and stimuli-responsive magnetic materials. Their physical properties open the application horizons in sensors, data storage, spintronics, and quantum computation. It was found that various optical phenomena, such as thermochromism, photoswitching of magnetic and optical characteristics, luminescence, nonlinear optical and chiroptical effects, as well as optical responsivity to external stimuli, can be implemented into molecule-based magnetic materials. Moreover, the fruitful interactions of these optical effects with magnetism in molecule-based materials can provide new physical cross-effects and multifunctionality, enriching the applications in optical, electronic, and magnetic devices. This Review aims to show the scope of optical phenomena generated in molecule-based magnetic materials, including the recent advances in such areas as high-temperature photomagnetism, optical thermometry utilizing SMMs, optical addressability of molecular qubits, magneto-chiral dichroism, and opto-magneto-electric multifunctionality. These findings are discussed in the context of the types of optical phenomena accessible for various classes of molecule-based magnetic materials.

Atomic-Scale Visualization of Multiferroicity in Monolayer NiI2

Progress in layered van der Waals materials has resulted in the discovery of ferromagnetic and ferroelectric materials down to the monolayer limit. Recently, evidence of the first purely 2D multiferroic material was reported in monolayer NiI2. However, probing multiferroicity with scattering-based and optical bulk techniques is challenging on 2D materials, and experiments on the atomic scale are needed to fully characterize the multiferroic order at the monolayer limit. Here, scanning tunneling microscopy (STM) supported by density functional theory (DFT) calculations is used to probe and characterize the multiferroic order in monolayer NiI2. It is demonstrated that the type-II multiferroic order displayed by NiI2, arising from the combination of a magnetic spin spiral order and a strong spin-orbit coupling, allows probing the multiferroic order in the STM experiments. Moreover, the magnetoelectric coupling of NiI2 is directly probed by external electric field manipulation of the multiferroic domains. The findings establish a novel point of view to analyze magnetoelectric effects at the microscopic level, paving the way toward engineering new multiferroic orders in van der Waals materials and their heterostructures.

Magnet-in-ferroelectric crystals exhibiting photomultiferroicity

Growing crystallographically incommensurate and dissimilar organic materials is fundamentally intriguing but challenging for the prominent cross-correlation phenomenon enabling unique magnetic, electronic, and optical functionalities. Here, we report the growth of molecular layered magnet-in-ferroelectric crystals, demonstrating photomanipulation of interfacial ferroic coupling. The heterocrystals exhibit striking photomagnetization and magnetoelectricity, resulting in photomultiferroic coupling and complete change of their color while inheriting ferroelectricity and magnetism from the parent phases. Under a light illumination, ferromagnetic resonance shifts of 910 Oe are observed in heterocrystals while showing a magnetization change of 0.015 emu/g. In addition, a noticeable magnetization change (8% of magnetization at a 1,000 Oe external field) in the vicinity of ferro-to-paraelectric transition is observed. The mechanistic electric-field-dependent studies suggest the photoinduced ferroelectric field effect responsible for the tailoring of photo-piezo-magnetism. The crystallographic analyses further evidence the lattice coupling of a magnet-in-ferroelectric heterocrystal system.

A Multistate Non-Volatile Photoelectronic Memory Device Based on Ferroelectric Tunnel Junction with Modulable Visible Light Photoresponse

Recently, certain ferroelectric tunnel junctions (FTJs) exhibit non-volatile modulations on photoresponse as well as tunneling electroresistance (TER) effects related to ferroelectric polarization states. From the opposite perspective, the corresponding polarization states can be read by detecting the levels of the photocurrent. In this study, we fabricate a novel amorphous selenium (a-Se)/PbZr0.2Ti0.8O3 (PZT)/Nb-doped SrTiO3 (NSTO) heterojunction, which exhibits a high TER of 3 × 106. Unlike perovskite oxide FTJs with a limited ultraviolet response, the introduction of a narrow bandgap semiconductor (a-Se) enables self-powered photoresponse within the visible light range. The self-powered photoresponse characteristics can be significantly modulated by ferroelectric polarization. The photocurrent after writing polarization voltages of +4 and -5 V exhibits a 1200% increase. Furthermore, the photocurrent could be clearly distinguished after writing stepwise polarization voltages, and then a multistate information storage is designed with nondestructive readout capacity under light illumination. This work holds great significance in advancing the development of ferroelectric multistate photoelectronic memories with high storage density and expanding the design possibilities for FTJs.

Concomitant Light-Reversible Magnetic Response in Multiferroic Oxide Heterostructures for Multiphysics Applications

The concept of multiphysics, where materials respond to diverse external stimuli, such as magnetic fields, electric fields, light irradiation, stress, heat, and chemical reactions, plays a fundamental role in the development of innovative devices. Nanomanufacturing, especially in low-dimensional systems, enhances the synergistic interactions taking place on the nanoscale. Light-matter interaction, rather than electric fields, holds great promise for achieving low-power, wireless control over magnetism, solving two major technological problems: the feasibility of electrical contacts at smaller scales and the undesired heating of the devices. Here, we shed light on the remarkable reversible modulation of magnetism using visible light in epitaxial Fe3O4/BaTiO3 heterostructure. This achievement is underpinned by the convergence of two distinct mechanisms. First, the magnetoelastic effect, triggered by ferroelectric domain switching, induces a proportional change in coercivity and remanence upon laser illumination. Second, light-matter interaction induces charged ferroelectric domain walls' electrostatic decompensations, acting intimately on the magnetization of the epitaxial Fe3O4 film by magnetoelectric coupling. Crucially, our experimental results vividly illustrate the capability to manipulate magnetic properties using visible light. This concomitant mechanism provides a promising avenue for low-intensity visible-light manipulation of magnetism, offering potential applications in multiferroic devices.

Thickness-Dependent Gilbert Damping and Soft Magnetism in Metal/Co-Fe-B/Metal Sandwich Structure

The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization.

Perspectives: Light Control of Magnetism and Device Development

Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

Magnetic domain wall (DW)-based logic devices offer numerous opportunities for emerging electronics applications allowing superior performance characteristics such as fast motion, high density, and nonvolatility to process information. However, these devices rely on an external magnetic field, which limits their implementation; this is particularly problematic in large-scale applications. Multiferroic systems consisting of a piezoelectric substrate coupled with ferromagnets provide a potential solution that provides the possibility of controlling magnetization through an electric field via magnetoelastic coupling. Strain-induced magnetization anisotropy tilting can influence the DW motion in a controllable way. We demonstrate a method to perform all-electrical logic operations using such a system. Ferromagnetic coupling between neighboring magnetic domains induced by the electric-field-controlled strain has been exploited to promote noncollinear spin alignment, which is used for realizing essential building blocks, including DW generation, propagation, and pinning, in all implementations of Boolean logic, which will pave the way for scalable memory-in-logic applications.

Barium Titanate/Gadolinium Ferrite: A New Material Composite to Store Energy

This work investigates the dielectric properties of barium titanate/gadolinium ferrite ceramic composites, with different concentrations of each material. Our objective was to increase the storage ability of this material, finding a compromise between high permittivity and low dielectric losses. A two-step sintering procedure was used in the preparation of the composites to attain the desired results. Their morphological, structural and electrical properties were tested using scanning electron microscopy, X-Ray powder diffraction and impedance spectroscopy, respectively. Dielectric characterizations were performed on the frequency band of 100 Hz-1 MHz and for different temperatures (180-380 K). The best compromise between barium titanate and gadolinium ferrite in the composition was calculated in order to obtain a potential material for electrical energy storage. The sample with 25% gadolinium ferrite presented the best results. The dielectric constant reached values of the order of 2000, at 1 kHz and 340 K. It was also important not to have very high losses, and this was confirmed by the calculated loss tangent.

Coexisting Ferroelectric and Ferrovalley Polarizations in Bilayer Stacked Magnetic Semiconductors

It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations in one magnetic semiconductor could offer the possibility to revolutionize electronic devices. In this study, monolayer and bilayer YI₂ are studied. Monolayer YI₂ is a ferromagnetic semiconductor and exhibits a valley polarization up to 105 meV. All of the present bilayer YI₂ regardless of stacking orders show antiferromagnetic states. Interestingly, the bilayer YI₂ with 3R-type stackings shows not only valley polarization but also unexpected ferroelectric polarization, proving the concurrent ferrovalley and multiferroics behaviors. Moreover, the valley polarization of 3R-type bilayer YI₂ can be reversed by controlling the direction of ferroelectric polarization through an electric field or manipulating the magnetization direction using an external magnetic field. The amazing phenomenon is also demonstrated in 2D van der Waals LaI₂ and GdBr₂ bilayers. A design idea of multifunctional devices is proposed based on the concurrent ferrovalley and multiferroics characteristics.

Deterministic Magnetic Switching in Perpendicular Magnetic Trilayers Through Sunlight-Induced Photoelectron Injection

Finding an energy-efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin-polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8 nm)/Co (0.65 nm)/Pt (2.5 nm)/PN Si heterojunction in an energy-efficient manner is proposed. The coercive field (H_C ) is altered from 261 to 95 Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140 Oe magnetic bias assistant. The element-resolved X-ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron-induced redistribution of the orbital and spin moment in Co magnetization. The first-principle calculations also reveal that the photo-induced electrons shift the Fermi level of electrons and enhance the in-plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding H_C decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current.

Anisotropic Melting Path of Charge-Ordering Insulator in LSMO/STO Superlattice

Multiple phases coexist in manganite with simultaneously active couplings, and the transition among them depends on the relative intensities of different interactions. However, the melting path with variable intensities is unclear. The concentration and the ordering of oxygen vacancy in previous work are found to induce ferromagnetic charge-ordering insulator phase in [(La_0.7 Sr_0.3 MnO₃ )₁₀ /(SrTiO₃ )₅ ]_n superlattice, which translates into metallic phase with magnetic field H and temperature T. In the current work, the H-T phase diagram for current I//[100] and I//[110] shows a large difference with H normal to the film plane, which is ascribed to the response of a variable range of hopping process to H with the in-plane anisotropic hopping probability of charge carrier. With H rotating from the out-of-plane to the in-plane direction, the preferred occupancy of the 3 d z 2 - r 2 $3{d}_{{z}^2 - {r}^2}$ orbital causes a decrease of spin-orbital coupling and lowers the activation energy, inducing a gentler melting process of a charge-ordering insulator. This work shows that the melting path of a charge-ordering insulator phase can be largely modulated in manganite with anisotropy.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si

Two-dimensional electron gas (2DEG) at the interface of amorphous Al₂O₃/SrTiO₃ (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.

Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films

Voltage control of magnetic anisotropy (VCMA) in Si-compatible ferroelectric/ferromagnetic multiferroic thin films is promising to enable power-efficient and integrated magnetic memories. However, their VCMA effect is weak and is always smaller than that of the bulk counterparts. Here, we achieve a more substantial VCMA effect in thin films than in the bulk, benefiting from the large in-plane piezo-strain mediated magnetoelectric coupling under strong fields. Si-compatible ferroelectric Pb(Zr,Ti)O₃ (PZT) thin films with large breakdown strength of up to 3.2 MV cm^-1 are fabricated to further construct multiferroic thin films. Since conventional methods fail to measure the VCMA effect under strong fields, we establish a micro-ferromagnetic resonance method based on micro-fabrication. An enhanced VCMA effect is demonstrated in PZT/CoFeB thin films, whose voltage-induced effective magnetic field (H_eff) could experimentally reach 26.1 Oe, which is much stronger than that in bulk control samples "PZT ceramic/CoFeB" (2.6 Oe) and "PMN-PT single crystal/CoFeB" (18.5 Oe) as well as previous reports. Theoretically, the H_eff in thin films could be > 60 Oe near the breakdown strength, resulting from a giant in-plane piezo-strain S₃₁ < -0.3%, which is comparable to that of the best ferroelectric single crystals. Si-compatible multiferroic thin films with enhanced VCMA will be a useful platform for developing integrated magnetic and spintronic devices.

Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3

Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe₂/In₂Se₃experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In₂Se₃, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In₂Se₃to VSe₂, the heterostructure has a type-III band alignment, and the charge transfer from In₂Se₃into VSe₂induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In₂Se₃is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe₂was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe₂/In₂Se₃predicts its wide applications in the fields of both 2D spintronics and multiferroics.

Electric-field control of nonlinear THz spintronic emitters

Energy-efficient spintronic technology holds tremendous potential for the design of next-generation processors to operate at terahertz frequencies. Femtosecond photoexcitation of spintronic materials generates sub-picosecond spin currents and emission of terahertz radiation with broad bandwidth. However, terahertz spintronic emitters lack an active material platform for electric-field control. Here, we demonstrate a nonlinear electric-field control of terahertz spin current-based emitters using a single crystal piezoelectric Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) that endows artificial magnetoelectric coupling onto a spintronic terahertz emitter and provides 270% modulation of the terahertz field at remnant magnetization. The nonlinear electric-field control of the spins occurs due to the strain-induced change in magnetic energy of the ferromagnet thin-film. Results also reveal a robust and repeatable switching of the phase of the terahertz spin current. Electric-field control of terahertz spintronic emitters with multiferroics and strain engineering offers opportunities for the on-chip realization of tunable energy-efficient spintronic-photonic integrated platforms.

Spintronic terahertz (THz) emitters are a class of magnetic heterostructure where femtosecond laser excitations generate THz radiation emission. While they have great potential, electric field control of spintronic emitter remains a challenge. Here, by combining a spintronic emitter with a piezoelectric substrate, Agarwal et al. demonstrate electric field control of THz emission through induced piezostrain.

Lead-Free Aurivillius Phase Bi2LaNb1.5Mn0.5O9: Structure, Ferroelectric, Magnetic, and Magnetodielectric Effects

Aurivillius phase Bi₂LaNb_1.5Mn_0.5O₉, derived from ferroelectric PbBi₂Nb₂O₉ by simultaneous substitution of the A-site and B-site cations, was synthesized using a molten-salt method. Here, we discuss the structure-property relationships in detail. X-ray and neutron diffraction show that Bi₂LaNb_1.5Mn_0.5O₉ adopts an A2₁am orthorhombic crystal structure. Rietveld refinement analysis, supported by Raman spectroscopy, indicates that the Bi³⁺ ions occupy the bismuth oxide blocks, La³⁺ ions occupy the perovskite A-site, and Nb⁵⁺/Mn³⁺ ions occupy the perovskite B-site. Ferroelectric ordering takes place at 535 K, which coexists with local ferromagnetic order below 65 K. The cation disorder on the B-site results in relaxor-ferroelectric behavior, and the short-range ferromagnetic order can be attributed to Mn³⁺/Mn⁴⁺ double-exchange. Magnetodielectric coupling measured at 5 K and 100 kHz in a field of 5 T suggests the existence of intrinsic spin-lattice coupling with a magnetodielectric coefficient of 0.20%. These findings will provide significant impetus for further research into potential devices based on the magnetodielectric effect in Aurivillius materials.

In silico assessment of electrophysiological neuronal recordings mediated by magnetoelectric nanoparticles

Magnetoelectric materials hold untapped potential to revolutionize biomedical technologies. Sensing of biophysical processes in the brain is a particularly attractive application, with the prospect of using magnetoelectric nanoparticles (MENPs) as injectable agents for rapid brain-wide modulation and recording. Recent studies have demonstrated wireless brain stimulation in vivo using MENPs synthesized from cobalt ferrite (CFO) cores coated with piezoelectric barium titanate (BTO) shells. CFO–BTO core–shell MENPs have a relatively high magnetoelectric coefficient and have been proposed for direct magnetic particle imaging (MPI) of brain electrophysiology. However, the feasibility of acquiring such readouts has not been demonstrated or methodically quantified. Here we present the results of implementing a strain-based finite element magnetoelectric model of CFO–BTO core–shell MENPs and apply the model to quantify magnetization in response to neural electric fields. We use the model to determine optimal MENPs-mediated electrophysiological readouts both at the single neuron level and for MENPs diffusing in bulk neural tissue for in vivo scenarios. Our results lay the groundwork for MENP recording of electrophysiological signals and provide a broad analytical infrastructure to validate MENPs for biomedical applications.

Coupled Multiphysics Modelling of Sensors for Chemical, Biomedical, and Environmental Applications with Focus on Smart Materials and Low-Dimensional Nanostructures

Low-dimensional nanostructures have many advantages when used in sensors compared to the traditional bulk materials, in particular in their sensitivity and specificity. In such nanostructures, the motion of carriers can be confined from one, two, or all three spatial dimensions, leading to their unique properties. New advancements in nanosensors, based on low-dimensional nanostructures, permit their functioning at scales comparable with biological processes and natural systems, allowing their efficient functionalization with chemical and biological molecules. In this article, we provide details of such sensors, focusing on their several important classes, as well as the issues of their designs based on mathematical and computational models covering a range of scales. Such multiscale models require state-of-the-art techniques for their solutions, and we provide an overview of the associated numerical methodologies and approaches in this context. We emphasize the importance of accounting for coupling between different physical fields such as thermal, electromechanical, and magnetic, as well as of additional nonlinear and nonlocal effects which can be salient features of new applications and sensor designs. Our special attention is given to nanowires and nanotubes which are well suited for nanosensor designs and applications, being able to carry a double functionality, as transducers and the media to transmit the signal. One of the key properties of these nanostructures is an enhancement in sensitivity resulting from their high surface-to-volume ratio, which leads to their geometry-dependant properties. This dependency requires careful consideration at the modelling stage, and we provide further details on this issue. Another important class of sensors analyzed here is pertinent to sensor and actuator technologies based on smart materials. The modelling of such materials in their dynamics-enabled applications represents a significant challenge as we have to deal with strongly nonlinear coupled problems, accounting for dynamic interactions between different physical fields and microstructure evolution. Among other classes, important in novel sensor applications, we have given our special attention to heterostructures and nucleic acid based nanostructures. In terms of the application areas, we have focused on chemical and biomedical fields, as well as on green energy and environmentally-friendly technologies where the efficient designs and opportune deployments of sensors are both urgent and compelling.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe₃O₄/BaTiO₃ nanopillar composites are successfully constructed. The well-ordered BaTiO₃ nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe₃O₄ layer is coated on BaTiO₃ nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C^-1 near the phase transition of BaTiO₃ (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Effect of interfacial and edge roughness on magnetoelectric control of Co/Ni microdisks on PMN-PT(011)

Uniform magnetic behavior within arrays of magnetoelectric heterostructures is important for the development of reliable strain-mediated microdevices. Multiple mechanisms may contribute to observed nonuniform magnetization reversal including surface roughness, non-uniform strain, and fabrication induced imperfections. Here, Co/Ni microdisks of 7 µm diameter were produced on both [Pb(Mg_1/3Nb_2/3)O₃]_1−x–[PbTiO₃]_x with x = 0.3 nominal composition (PMN-30PT) (011) and Si substrates, and the out-of-plane magnetization reversal was characterized using magneto-optical Kerr effect (MOKE). Coercivity variation across the microdisks within the arrays was observed on both the PMN-30PT and Si specimens with zero electric field applied. Co/Ni microdisks on a PMN-30PT substrate displayed relatively larger coercivity than those on a Si substrate due to the surface roughness effect. Quasistatic electric fields of varying magnitude were applied to the PMN-30PT substrate to assess the dependence of the coercivity on electric field induced strain. Our results indicate that while coercivity decreases with the increase of electric field induced strain, interfacial and edge roughness combine to realize a prohibitively large coercivity to overcome within the Co/Ni microdisks as well as a broad distribution of coercive field across a patterned microdisk array.

Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures

Nonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions.

Low-voltage magnetoelectric coupling in membrane heterostructures

Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE)/ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low-power multifunctional devices. Relaxor-FEs, such as (1 − x)Pb(Mg_1/3Nb_2/3)O₃-(x)PbTiO₃ (PMN-xPT), are ideal FE layer candidates because of their giant piezoelectricity. However, thin films of PMN-PT suffer from substrate clamping, which substantially reduces piezoelectric in-plane strains. Here, we demonstrate low-voltage ME coupling in an all-thin-film heterostructure that uses the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90° Ni magnetization rotation with 3 V PMN-PT bias, much less than the bulk PMN-PT ~100-V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step toward understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven ME heterostructures.

A voltage-pulse-modulated giant magnetoresistance switch with four flexible sensing ranges

This article introduces an innovative technique for achieving a giant magnetoresistance (GMR) switch with an adjustable sensing field range. A spin-valve (SV) patterned into a strip shape is grown on a specific (110)-cut Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃(PMN-PT) substrate. In the process of depositing films, a magnetic easy axis of the free layer in the SV is produced along the [001] direction (thex-axis) of the PMN-PT. This PMN-PT can produce a nonvolatile strain by using a positive voltage pulse. Accordingly, the magnetic moment of the free layer can be modulated to they-axis by the strain-mediated magnetoelectric coupling effect produced in the SV/PMN-PT heterostructure. Furthermore, a negative voltage pulse can release the strain and revert the magnetic moment to the initial [001] direction. The effective field along the [1-10] direction produced by the nonvolatile strain can modulate the easy axis of the free layer, changing it from thex-axis to they-axis. Therefore, large and small switching fields are achieved in a bipolar GMR switch. Furthermore, by applying positive and negative voltage pulses at appropriate moments, two asymmetrical switching field ranges are obtained. Thus, a GMR switch with four adjustable switching field ranges can be obtained. The proposed modulating model is flexible and can meet the requirements of specific and different application systems. The proposed design reveals a great potential for the application to the internet of things and the development of low-power and high-efficient magnetoresistive sensors.

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn_1/3Nb_2/3O₃)_1−x-(PbTiO₃)_x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

The 2021 Magnonics Roadmap

Magnonics is a budding research field in nanomagnetism and nanoscience that addresses the use of spin waves (magnons) to transmit, store, and process information. The rapid advancements of this field during last one decade in terms of upsurge in research papers, review articles, citations, proposals of devices as well as introduction of new sub-topics prompted us to present the first roadmap on magnonics. This is a collection of 22 sections written by leading experts in this field who review and discuss the current status besides presenting their vision of future perspectives. Today, the principal challenges in applied magnonics are the excitation of sub-100 nm wavelength magnons, their manipulation on the nanoscale and the creation of sub-micrometre devices using low-Gilbert damping magnetic materials and its interconnections to standard electronics. To this end, magnonics offers lower energy consumption, easier integrability and compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity and efficient tunability by various external stimuli to name a few. Hence, despite being a young research field, magnonics has come a long way since its early inception. This roadmap asserts a milestone for future emerging research directions in magnonics, and hopefully, it will inspire a series of exciting new articles on the same topic in the coming years.

Full-Electrical Writing and Reading of Magnetization States in a Magnetic Junction with Symmetrical Structure and Antiparallel Magnetic Configuration

Full-electrical writing and reading of magnetization states are vital for the development of next-generation spintronic devices with high density and ultralow-power consumption. Here, we proposed a method to realize the full-electrical writing and reading of magnetization states via a structural design, which only requires a symmetrical device structure and an antiparallel magnetic configuration. CrBr₃, h-BN, and 1T-MnSe₂ were selected to construct the device of CrBr₃/h-BN/1T-MnSe₂/h-BN/CrBr₃, where the magnetization of two CrBr₃ layers was fixed to the antiparallel state. By changing the direction and magnitude of the applied electric field, it is proved that the magnetization of 1T-MnSe₂ could be reversed. Moreover, the device energies before and after the magnetization reversal are the same when the applied electric field is removed due to the structural symmetry. Meanwhile, the magnetic anisotropy energy of 1T-MnSe₂ could induce an energy barrier, to guarantee the nonvolatile magnetization reversal in the present device. In addition, the tunnel magnetoresistance ratio was found up to 421%, showing a promising application to full-electrically write and read magnetization in spintronics. The present study likely promotes the development of full-electrical and ultralow-power spintronics devices.

Electric-Field Control of Propagating Spin Waves by Ferroelectric Domain-Wall Motion in a Multiferroic Heterostructure

Magnetoelectric coupling in multiferroic heterostructures offers a promising platform for electric-field control of magnonic devices based on low-power spin-wave transport. Here, electric-field manipulation of the amplitude and phase of propagating spin waves in a ferromagnetic Fe film on top of a ferroelectric BaTiO₃ substrate is demonstrated experimentally. Electric-field effects in this composite material system are mediated by strain coupling between alternating ferroelectric stripe domains with in-plane and perpendicular polarization and fully correlated magnetic anisotropy domains with differing spin-wave transport properties. The propagation of spin waves across the strain-induced magnetic anisotropy domains of the Fe film is directly imaged and it is shown how reversible electric-field-driven motion of ferroelectric domain walls and pinned anisotropy boundaries turns the spin-wave signal on and off. Furthermore, linear electric-field tuning of the spin-wave phase by altering the width of strain-coupled stripe domains is demonstrated. The results provide a new route toward energy-efficient reconfigurable magnonics.

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe_1-xGa_x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe_1-xGa_x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe_1-xGa_x - [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10^-5 s m^-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

Single-Domain Multiferroic Array-Addressable Terfenol-D (SMArT) Micromagnets for Programmable Single-Cell Capture and Release

Programming magnetic fields with microscale control can enable automation at the scale of single cells ≈10 µm. Most magnetic materials provide a consistent magnetic field over time but the direction or field strength at the microscale is not easily modulated. However, magnetostrictive materials, when coupled with ferroelectric material (i.e., strain-mediated multiferroics), can undergo magnetization reorientation due to voltage-induced strain, promising refined control of magnetization at the micrometer-scale. This work demonstrates the largest single-domain microstructures (20 µm) of Terfenol-D (Tb_0.3 Dy_0.7 Fe_1.92 ), a material that has the highest magnetostrictive strain of any known soft magnetoelastic material. These Terfenol-D microstructures enable controlled localization of magnetic beads with sub-micrometer precision. Magnetically labeled cells are captured by the field gradients generated from the single-domain microstructures without an external magnetic field. The magnetic state on these microstructures is switched through voltage-induced strain, as a result of the strain-mediated converse magnetoelectric effect, to release individual cells using a multiferroic approach. These electronically addressable micromagnets pave the way for parallelized multiferroics-based single-cell sorting under digital control for biotechnology applications.

Enhancing Sunlight Control of Interfacial Magnetism by Introducing the ZnO Layer for Electron Harvesting

Recently, researchers have developed photovoltaic (PV) control of magnetism to provide a new way of manipulating spin states in an energy-effective manner, where the capability of magnetism manipulation is crucial. Here, we established a PV heterostructure of Pt/PV/ZnO/Co/Si to realize sunlight control of magnetism, where the ZnO layer is introduced to enhance the electron transportation as well as the interfacial optical-electromagnetic tunability. Compared to the PV heterostructure without the ZnO layer (245 Oe), a much greater ferromagnetic resonance shift (1149 Oe) and a saturated magnetization reduction (12.7%) were obtained with the optimal ZnO inserting layer under sunlight illumination. These results prove that the ZnO layer plays a key role in optimizing magnetic manipulation and opening a door toward PV spintronics in the future.

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

Room-temperature skyrmions in magnetic multilayers are considered to be promising candidates for the next-generation spintronic devices. Several approaches have been developed to control skyrmions, but they either cause significant heat dissipation or require ultrahigh electric fields near the breakdown threshold. Here, we demonstrate electric-field control of skyrmions through strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric multiferroic heterostructures. We show the process of non-volatile creation of multiple skyrmions, reversible deformation and annihilation of a single skyrmion by performing magnetic force microscopy with in situ electric fields. Strain-induced changes in perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction strength are characterized experimentally. These experimental results, together with micromagnetic simulations, demonstrate that strain-mediated magnetoelectric coupling (via strain-induced changes in both the perpendicular magnetic anisotropy and interfacial Dzyaloshinskii–Moriya interaction is responsible for the observed electric-field control of skyrmions. Our work provides a platform to investigate electric-field control of skyrmions in multiferroic heterostructures and paves the way towards more energy-efficient skyrmion-based spintronics.

The common approaches to control of skymions cause significant heat dissipation or require high electric fields near the breakdown threshold. Here, the authors demonstrate electric-field control of skyrmions through strain-mediated magnetoelectric coupling in multiferroic heterostructures.

Non-Volatile Regulation of Magnetism via Electric Fields in Polycrystal FeSi/(011) PMN-0.32PT Heterostructures

The choice and configuration of the ferroelectric (FE) substrate and the ferromagnetic (FM) layer in FM/FE heterostructures play an important role in magnetism modification with regard to amplitude and efficiency. In this study, we fabricated FeSi films on low crystalline (011) [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-0.32PT) using radio frequency magnetron sputtering. In the annealed FeSi/(011) PMN-0.32PT heterostructures, the FeSi film presented with a (011) preferred orientated polycrystalline structure and low magnetocrystalline anisotropy. Both loop-like and butterfly-like magnetism modifications were observed by applying bipolar electric fields, and the weak and abnormal electrically mediated magnetism behaviors were significantly different from the prominent magnetic anisotropy transition in FeSi/(011) PMN-0.3PT. The comparative analyses suggest that the resulting high-quality single-crystalline PMN-xPT and FM films with low coercivity are of great significance for exploring giant, reversible, and non-volatile magnetism regulation.

A New Highly Anisotropic Rh-Based Heusler Compound for Magnetic Recording

The development of high-density magnetic recording media is limited by superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat-assisted magnetic recording was developed, rapidly heating the media to the Curie temperature T_c before writing, followed by rapid cooling. Requirements are a suitable T_c , coupled with anisotropic thermal conductivity and hard magnetic properties. Here, Rh₂ CoSb is introduced as a new hard magnet with potential for thin-film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJ m^-3 is combined with a saturation magnetization of μ₀ M_s  = 0.52 T at 2 K (2.2 MJ m^-3 and 0.44 T at room temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth-free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 μ_B on Co, which is hybridized with neighboring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature dependence of the anisotropy that follows from its T_c of 450 K, together with a thermal conductivity of 20 W m^-1 K^-1 , make Rh₂ CoSb a candidate for the development of heat-assisted writing with a recording density in excess of 10 Tb in.^-2 .

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this work, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.

Carbon resistive probe memory designed for ultra-high storage density

Probe-based storage memories are considered one of the most promising solutions to address the mass storage issues in the near future. However, data size arising from conventional probe memories is usually larger than probe size due to the thermal diffusion effect. To eliminate such thermal interference and make data dimension fully dominated by probe dimension, we proposed a concept of carbon-based resistive probe memory and developed a comprehensive computational model to predict its write, rewrite and readout performances governed by electro-thermal and mass concentration processes. The physical reality of such a theoretical model was demonstrated through the good agreement between the calculated and experimental measured threshold voltages for different layered thickness. The data bit of carbon-based resistive probe memory, considered as the sp² filament inside sp³ background, is formed completely underneath the tip edge due to the localized electric field induced here. This makes the bit size fully determined by the probe tip dimension and allows for the achievement of ultra-high density using an ultra-small probe tip with low energy consumption. Such a conductive filament can be also rewritten back to its pristine sp³ state at relatively high temperature (~250 °C) and detected by sensing the device reading contrast (~1). The designed carbon-based resistive probe memory can retain its bit completeness even if we reduce the bit pitch to 28 nm for a probe size of 25 nm, exhibiting a superior immunity to thermal cross-talk effect. It, however, induces strong readout cross-talk, which is revealed from the resistance image of the multiple bit pattern. This adversely reduces the achievable recording density due to the required large bit pitch, which can be alleviated using either a very sharp tip apex or the optical readout scheme.

Magnetoelectrics: Three Centuries of Research Heading towards the 4.0 Industrial Revolution

Magnetoelectric (ME) materials composed of magnetostrictive and piezoelectric phases have been the subject of decades of research due to their versatility and unique capability to couple the magnetic and electric properties of the matter. While these materials are often studied from a fundamental point of view, the 4.0 revolution (automation of traditional manufacturing and industrial practices, using modern smart technology) and the Internet of Things (IoT) context allows the perfect conditions for this type of materials being effectively/finally implemented in a variety of advanced applications. This review starts in the era of Rontgen and Curie and ends up in the present day, highlighting challenges/directions for the time to come. The main materials, configurations, ME coefficients, and processing techniques are reported.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Recent progress in the development of artificial intelligence technologies, aided by deep learning algorithms, has led to an unprecedented revolution in neuromorphic circuits, bringing us ever closer to brain-like computers. However, the vast majority of advanced algorithms still have to run on conventional computers. Thus, their capacities are limited by what is known as the von-Neumann bottleneck, where the central processing unit for data computation and the main memory for data storage are separated. Emerging forms of non-volatile random access memory, such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory, and resistive random access memory, are widely considered to offer the best prospect of circumventing the von-Neumann bottleneck. This is due to their ability to merge storage and computational operations, such as Boolean logic. This paper reviews the most common kinds of non-volatile random access memory and their physical principles, together with their relative pros and cons when compared with conventional CMOS-based circuits (Complementary Metal Oxide Semiconductor). Their potential application to Boolean logic computation is then considered in terms of their working mechanism, circuit design and performance metrics. The paper concludes by envisaging the prospects offered by non-volatile devices for future brain-inspired and neuromorphic computation.

Ferroelectrically tunable magnetism in BiFeO3/BaTiO3 heterostructure revealed by the first-principles calculations

The perovskite oxide interface has attracted extensive attention as a platform for achieving strong coupling between ferroelectricity and magnetism. In this work, robust control of magnetoelectric (ME) coupling in the BiFeO3/BaTiO3 (BFO/BTO) heterostructure (HS) was revealed by using the first-principles calculation. Switching of the ferroelectric polarization of BTO induce large ME effect with significant changes on the magnetic ordering and easy magnetization axis, making up for the weak ME coupling effect of single-phase multiferroic BFO. In addition, the Dzyaloshinskii-Moriya interaction (DMI) and the exchange coupling constants J for the BFO part of the HSs are simultaneously manipulated by the ferroelectric polarization, especially the DMI at the interface is significantly enhanced, which is three or four times larger than that of the individual BFO bulk. This work paves the way for designing new nanomagnetic devices based on the substantial interfacial ME effect.

Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet

Spintronics exhibits significant potential for a neuromorphic computing system with high speed, high integration density, and low dissipation. In this article, we propose an ultralow-dissipation skyrmion-based nanodevice composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate for neuromorphic computing. Skyrmions/skyrmion bubbles can be generated in the upper layer of an SAF with a weak anisotropy energy (E _a). Applying a weak electric field on the heterostructure, interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces a variation of the resistance of a magnetic tunneling junction that can mimic the potentiation/depression of a synapse and the leaky-integral-and-fire function of a neuron at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.

Selection and Optimization of a K0.5Na0.5NbO3-Based Material for Environmentally-Friendly Magnetoelectric Composites

Li- and Ta-modified K0.5Na0.5NbO3 compounds are among the most promising lead-free ferroelectrics for high-sensitivity piezoelectric ceramic materials, and are potentially capable of replacing Pb(Zr,Ti)O3. They are also being investigated as piezoelectric components in environmentally friendly magnetoelectric composites. However, most suitable modifications for this application have not been identified. We report here a simulation study of how the magnetoelectric voltage responses of layered composite structures based on Lix(K0.5Na0.5)1−xNb1−yTayO3 varies with the chemical composition of the piezoelectric. Instead of relying on material coefficients from the literature, which would have required using different sources, an ad hoc set of materials was prepared. This demanded tailoring preparation by conventional means to obtain dense ceramics while controlling alkali volatilization, perovskite phase and microstructure, as well as characterizing their dielectric, elastic and electromechanical properties. This provided the set of relevant material coefficients as a function of composition, which was used to obtain the magnetoelectric responses of model layered structures including a reference magnetostrictive spinel oxide by simulation. The piezoelectric material leading to the highest magnetoelectric coefficient was identified, and shown to be different to that showing the highest piezoelectric coefficient. This reflects the dependence of the magnetoelectric response on all material coefficients, along with the complex interplay between composition, processing and properties in K0.5Na0.5NbO3-based ceramics.

Enhanced Magnetoelectric Coupling in BaTiO3-BiFeO3 Multilayers-An Interface Effect

Combining various (multi-)ferroic materials into heterostructures is a promising route to enhance their inherent properties, such as the magnetoelectric coupling in BiFeO3 thin films. We have previously reported on the up-to-tenfold increase of the magnetoelectric voltage coefficient α ME in BaTiO3-BiFeO3 multilayers relative to BiFeO3 single layers. Unraveling the origin and mechanism of this enhanced effect is a prerequisite to designing new materials for the application of magnetoelectric devices. By careful variations in the multilayer design we now present an evaluation of the influences of the BaTiO3-BiFeO3 thickness ratio, oxygen pressure during deposition, and double layer thickness. Our findings suggest an interface driven effect at the core of the magnetoelectric coupling effect in our multilayers superimposed on the inherent magnetoelectric coupling of BiFeO3 thin films, which leads to a giant α ME coefficient of 480 V c m -1 Oe-1 for a 16 × (BaTiO3-BiFeO3) superlattice with a 4 . 8 nm double layer periodicity.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Electric-Field-Enhanced Bulk Perpendicular Magnetic Anisotropy in GdFe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Perpendicular magnetic anisotropy is important for increasing the information storage density in the perpendicular magnetic recording media, and for rare-earth-transition-metal alloys with bulk perpendicular magnetic anisotropy that generate great research interest due to their abundant interesting phenomena, such as fast domain wall motion and skyrmion. Here, we deposit amorphous GdFe ferrimagnetic films on Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ ferroelectric substrate and investigate the effect of electric-field-induced piezostrain on its bulk perpendicular magnetic anisotropy. The anomalous Hall effect and polar Kerr image measurements suggest an enhanced bulk perpendicular magnetic anisotropy by electric field, which originates from a positive magnetoelastic anisotropy due to the positive magnetostriction coefficient of the GdFe film and the electric-field-induced tensile strain along the z axis in Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ ferroelectric substrate. Our results enrich the electrical control of perpendicular magnetic anisotropy and are useful for designing spintronic devices based on perpendicular magnetic anisotropy.

Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications

The inexorable trend of next generation spintronics is to develop smaller, lighter, faster, and more energy efficient devices. Ultimately, spintronics driven by free energy, for example, solar power, is imperative. Here, a prototype photovoltaic spintronic device with an optical-magneto-electric tricoupled photovoltaic/magnetic thin film heterojunction, where magnetism can be manipulated directly by sunlight via interfacial effect, is proposed. The magnetic anisotropy is reduced evidenced by the out-of-plane ferromagnetic resonance (FMR) field change of 640.26 Oe under 150 mW cm-2 illumination via in situ electron spin resonance (ESR) method. The transient absorption analysis and the first-principles calculation reveal that the photovoltaic electrons doping in the cobalt film alter the band filling of this ferromagnetic film. The findings provide a new path of electron doping control magnetism and demonstrate an optical-magnetic dual controllable logical switch with limited energy supply, which may further transform the landscape of spintronics research.