Perovskite Photodetectors Operating in Both Narrowband and Broadband Regimes

Recent Developments of Advanced Broadband Photodetectors Based on 2D Materials

With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations and exceptional electronic properties, two-dimensional (2D) materials are considered as ideal candidates for broadband photodetection applications. However, broadband photodetectors with both high responsivity and fast response time remain a challenging issue for all the researchers. This review paper is organized as follows. Introduction introduces the fundamental properties and broadband photodetection performances of transition metal dichalcogenides (TMDCs), perovskites, topological insulators, graphene, and black phosphorus (BP). This section provides an in-depth analysis of their unique optoelectronic properties and probes the intrinsic physical mechanism of broadband detection. In Two-Dimensional Material-Based Broadband Photodetectors, some innovative strategies are given to expand the detection wavelength range of 2D material-based photodetectors and enhance their overall performances. Among them, chemical doping, defect engineering, constructing heterostructures, and strain engineering methods are found to be more effective for improving their photodetection performances. The last section addresses the challenges and future prospects of 2D material-based broadband photodetectors. Furthermore, to meet the practical requirements for very large-scale integration (VLSI) applications, their work reliability, production cost and compatibility with planar technology should be paid much attention.

Cutting-Edge Developments in Metal Halide Perovskites Core/Shell Heterocrystals: from Photodetectors to Biomedical Applications

In recent years, the performance of metal halide perovskite (MHP)-based detectors (photon, biomedical, and X-ray detection) has significantly improved, resulting in higher carrier mobilities, longer carrier diffusion lengths, and excellent absorption coefficients. However, the widespread adoption of halide perovskites has been hindered by issues related to their stability and toxicity. Various strategies have been adopted to address these challenges, focusing on enhancing ambient stability and reducing toxicity by encapsulating MHPs within stable and robust host materials, such as silicon compounds, metal oxides, chalcogenides, and lead-free perovskites. This review focuses on recent developments in hybrid nanostructure-based detectors (photon, biomedical, and X-ray), particularly core/shell architectures, and provides a comprehensive analysis of techniques for mitigating degradation due to light and oxygen exposure, UV irradiance, and thermal effects. This review enhances the understanding of current advancements in core/shell-based detectors.

Self-Driven Perovskite/Organic Quasi-Tandem Photodetectors Operating in Both Narrowband and Broadband Regimes

Dual-band photodetectors (PDs) have attracted extensive research attention due to their great potential for diverse and refreshing application scenarios in full-color imaging, optical communication, and imaging detection. Here, a self-driven dual-band PD without filters and other auxiliary equipment to achieve a narrowband response in Mode 1 and a broadband response in Mode 2 was designed based on carrier-selective transmission narrowing (CSTN). The polymer material poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), which has the appropriate energy level, was selected to be the carrier-selective transmission layer. In Mode 1, the dual-band PD exhibits a near-infrared (NIR) narrowband response in 750-900 nm, which indicates a responsivity of 360 mA/W, a full-width at half-maximum (fwhm) of 81 nm, and a specific detectivity (D*) of 7.49 × 1010 Jones at 810 nm. Simultaneously, in Mode 2, the dual-band PD exhibits a UV-visible-NIR broadband responsivity of 180 mA/W and a specific detectivity (D*) of 3.8 × 1010 Jones at 520 nm. Our study provides a reliable idea for the commercial applications of dual-function photodetectors.

Perovskite versus Standard Photodetectors

Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors' design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (R), detectivity (D*) and response time (τ), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated R and D*, which may be due to two reasons: immature device technology and erroneous D* estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost D* for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a D* close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future.

Graphene-Perovskite Fibre Photodetectors

The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, fibre PDs are prepared by combining rolled graphene layers and photoactive perovskites. Conductive fibres (~500 Ωcm-1) are made by rolling single-layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al2O3 and parylene C), another rolled SLG as a channel, and perovskite as photoactive component. The resulting gate-tunable PD has a response time~9ms, with an external responsivity~22kAW-1 at 488nm for a 1V bias. The external responsivity is two orders of magnitude higher, and the response time one order of magnitude faster, than state-of-the-art wearable fibre-based PDs. Under bending at 4mm radius, up to~80% photocurrent is maintained. Washability tests show~72% of initial photocurrent after 30 cycles, promising for wearable applications.

Optoelectronic Devices for In-Sensor Computing

The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, the transmission of massive and unstructured sensory data from sensors to computing units poses great challenges in terms of power-efficiency, transmission bandwidth, data storage, time latency, and security. To efficiently process massive sensory data, it is crucial to achieve data compression and structuring at the sensory terminals. In-sensor computing integrates perception, memory, and processing functions within sensors, enabling sensory terminals to perform data compression and data structuring. Here, vision sensors are adopted as an example and discuss the functions of electronic, optical, and optoelectronic hardware for visual processing. Particularly, hardware implementations of optoelectronic devices for in-sensor visual processing that can compress and structure multidimensional vision information are examined. The underlying resistive switching mechanisms of volatile/nonvolatile optoelectronic devices and their processing operations are explored. Finally, a perspective on the future development of optoelectronic devices for in-sensor computing is provided.

Multidimensional vision sensors for information processing

The visual scene in the physical world integrates multidimensional information (spatial, temporal, polarization, spectrum and so on) and typically shows unstructured characteristics. Conventional image sensors cannot process this multidimensional vision data, creating a need for vision sensors that can efficiently extract features from substantial multidimensional vision data. Vision sensors are able to transform the unstructured visual scene into featured information without relying on sophisticated algorithms and complex hardware. The response characteristics of sensors can be abstracted into operators with specific functionalities, allowing for the efficient processing of perceptual information. In this Review, we delve into the hardware implementation of multidimensional vision sensors, exploring their working mechanisms and design principles. We exemplify multidimensional vision sensors built on emerging devices and silicon-based system integration. We further provide benchmarking metrics for multidimensional vision sensors and conclude with the principle of device-system co-design and co-optimization.

Enhancement of Photodetector Characteristics by Zn-Porphyrin-Passivated MAPbBr3 Single Crystals

Perovskite single crystals have garnered significant interest in photodetector applications due to their exceptional optoelectronic properties. The outstanding crystalline quality of these materials further enhances their potential for efficient charge transport, making them promising candidates for next-generation photodetector devices. This article reports the synthesis of methyl ammonium lead bromide (MAPbBr3) perovskite single crystal (SC) via the inverse-temperature crystallization method. To further improve the performance of the photodetector, Zn-porphyrin (Zn-PP) was used as a passivating agent during the growth of SC. The optical characterization confirmed the enhancement of optical properties with Zn-PP passivation. On single-crystal surfaces, integrated photodetectors are fabricated, and their photodetection performances are evaluated. The results show that the single-crystalline photodetector passivated with 0.05% Zn-PP enhanced photodetection properties and rapid response speed. The photoelectric performance of the device, including its responsivity (R), external quantum efficiency (EQE), detective nature (D), and noise-equivalent power (NEP), showed an enhancement of the un-passivated devices. This development introduces a new potential to employ high-quality perovskite single-crystal-based devices for more advanced optoelectronics.

Self-Powered Wide-Narrow Bandgap-Laminated Perovskite Photodetector with Bipolar Photoresponse for Secure Optical Communication

Perovskite photodetectors with bipolar photoresponse characteristics are expected to be applied in the field of secure optical communication (SOC). However, how to realize the perovskite photodetector with bipolar response remains challenging. Herein, by introducing bismuth iodide (BiI3 ) into Sn-Pb mixed perovskite precursor solution, 2D perovskite FA3 Bi2 I9 is spontaneously formed at the bottom to realize a wide-narrow bandgap-laminated perovskite film. Wavelength-dependent bipolar response is realized based on the absorption difference of the photoactive region with different bandgap combined with the carrier competition of the homotypic transport layer adopted in the as-fabricated photodetector. Under the visible/near-infrared (NIR) light irradiation, the bottom/top of the film generates a higher carrier concentration, where electrons are easier to be separated and transported by the SnO2 /PC61 BM to the bottom/top electrodes, respectively, resulting in a negative and positive bipolar response. Finally, based on positive NIR signal as the effective signal and negative visible signal as the interference signal, the SOC system is realized, where the positive NIR signal is well hidden by the negative visible signal. This work provides a simple and feasible strategy for fabrication of laminated perovskite films to achieve bipolar response.

Homogeneous Bridging Induces Compact and Scalable Perovskite Thick Films for X-Ray Flat-Panel Detectors

Solution-processed organic-inorganic hybrid perovskite polycrystalline thick films have shown great potential in X-ray detection. However, the preparation of compact perovskite thick films with large area is still challenging due to the limitation of feasible ink formulation and pinholes caused by solvent volatilization. Post-treatment and hot-pressing are usually involved to improve the film quality, which is however unsuitable for subsequent integration. In this work, a homogeneous bridging strategy is developed to prepare compact perovskite films directly. A stable perovskite slurry with suitable viscosity consisting of undissolved grains and supersaturated solution is formed by adding a weak coordination solvent to the pre-synthesized microcrystalline powders. Small perovskite grains in situ grow from the saturated solution during the annealing, filling the pinholes and connecting the surrounding original grains. As a result, large-area perovskite thick film with tight grain arrangement and ultralow current drift is blade-coated to achieve X-ray imaging. The optimal device displays an impressive mobility-lifetime product of 2.2 × 10-3  cm2  V-1 and a champion ratio of sensitivity to the dark current density of 2.23 × 1011  µC Gyair -1  A-1 . This work provides a simple and effective route to prepare high-quality perovskite thick films, which is instructive for the development of perovskite-based X-ray flat-panel detectors.

Fast Response, High Spectral Rejection Ratio, Self-Filtered Ultranarrowband Photodetectors Based on Perovskite Single-Crystal Heterojunctions

Narrowband photodetectors have wide application potential in high-resolution imaging and encrypted communication, due to their high-precision spectral resolution capability. In this work, we report a fast response, high spectral rejection ratio, and self-filtered ultranarrowband photodetector with a new mechanism, which introduces bulk recombination by doping Bi3+ and cooperates with surface recombination for further quenching photogenerated charges generated by short-wavelength-light excitation in perovskite single-crystal. A perovskite film focused on collecting charges is fabricated on the single crystal by a lattice-matched solution-processed epitaxial growth method. Due to the formation of PN heterojunctions, a narrowband photodetector in this mechanism has remarkable spectral selectivity and detection performance with an ultranarrow full width at half-maximum (FWHM) of 7.7 nm and a high spectral rejection ratio of 790, as well as a high specific detectivity up to 1.5 × 1010 Jones, a fast response speed with a rise time and fall time of ∼8 and 137 μs. The ultrafast and ultranarrow spectra response of self-filtered narrowband photodetector provides a new strategy in high-precision and high-resolution photoelectric detection.

Visible-Blind Narrowband Near-Infrared Photodetector for Precise Real-Time Photoplethysmography Measurement

The visible-blind narrowband photodetector (NPD) with spectral selective sensitivity to near-infrared (NIR) light is an important technology in the field of cardiovascular health assessment. However, the biological information carried by NIR light constantly changes signals with small amplitude and fast speed, which puts high requirements on the performance of detectors. Herein, visible-blind NIR NPDs were constructed by integrating solution-processable films of perovskite, CuSCN, and organic semiconductors. The NIR response was provided by the organic bulk heterojunction (OBHJ) film with a narrow band gap. A thick perovskite layer was applied to screen the incident visible light and suppress the leakage current in the dark state. CuSCN with a high LUMO level blocked the extraction of the visible-light-induced free electrons. The width of the response window was restricted by adjusting the band gap of the perovskite and the donor/acceptor ratio of the OBHJ film. The optimized NIR NPD exhibits a comprehensive performance including visible-blind response, a tunable response spectrum, a high responsivity/detectivity, and a short response time. In practical photoplethysmography measurements, the detector can record the human heart rate in real time through a noninvasive technique and precisely monitor the whole cardiac cycle, which provides an effective method for early detection of cardiovascular symptoms for timely diagnosis and treatment.

Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

In recent years, halide perovskite materials have been used to make high-performance solar cells and light-emitting devices. However, material defects still limit device performance and stability. Here, synchrotron-based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr3 (MA = CH3 NH3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light-induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X-ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.

Cascade perovskite single crystal for gamma-ray spectroscopy

The halide lead perovskite single crystals (HLPSCs) have great potential in gamma-ray detection with high attenuation coefficient, strong defects tolerance, and large mobility-lifetime product. However, mobile halide ions would migrate under high external bias, which would both weaken the gamma-ray response and cause additional noise. Here, we report the gamma-ray PIN photodiodes made of cascade HLPSCs including both ion-formed and electron-hole-formed electrical junctions that could suppress the ions migration and improve the charges collection. Our photodiodes based on cascade HLPSCs (MAPbBr3/MAPbBr2.5Cl0.5/MAPbCl3) show a wide halide-ion-formed depletion layer of ∼52 μm. The built-in potential along the wide ionic-formed junction ensures a high mobility-lifetime product of 1.1 × 10-2 cm2V-1. As a result, our gamma-ray PIN photodiodes exhibit compelling response to 241Am, 137Cs, and 60Co; the energy resolution can reach 9.4%@59.5keV and 5.9%@662keV, respectively. This work provides a new path toward constructing high-performance gamma-ray detectors based on HLPSCs.

3D-Heterojunction Based on Embedded Perovskite Micro-Sized Single Crystals for Fast Photomultiplier Photodetectors with Broad/Narrowband Dual-Mode

A fast photomultiplier photodetector with a broad/narrowband dual mode is implemented using a new 3D heterostructure based on embedded perovskite micro-sized single crystals. Because the single-crystal size is smaller than the electrode size, the active layer can be divided into a perovskite microcrystalline part for charge transport and a polymer-embedded part for charge storage. This induces an additional radial interface in the 3D heterojunction structure, and allows a photogenerated built-in electric field in the radial direction, especially when the energy levels between the perovskite and embedding polymer are similar. This type of heterojunction has a small radial capacitance that can effectively reduce carrier quenching and accelerate the carrier response. By controlling the applied bias direction, up to 300-1000% external quantum efficiency (EQE) and microsecond response can be achieved not only in the wide range of ultraviolet to visible light from 320 to 550 nm, but also in the narrow-band response with a full width at half minimum (FWHM) of 20 nm. This shows great potential for applications in integrated multifunctional photodetectors.

Recent Progress on Wavelength-Selective Perovskite Photodetectors for Image Sensing

Spectral sensing plays a crucial part in imaging technologies, optical communication, and other fields. However, complicated optical elements, such as prisms, interferometric filters, and diffraction grating, are required for commercial multispectral detectors, which hampers their advance toward miniaturization and integration. In recent years, metal halide perovskites have been emerging for optical-component-free wavelength-selective photodetectors (PDs) because of their continuously tunable bandgap, fascinating optoelectronic properties, and simple preparation processes. In this review, recent advances in wavelength-selective perovskite PDs, including narrowband PDs, dual-band PDs, multispectral-recognizable PDs, and X-ray PDs, are highlighted, with an emphasis on device structure designs, working mechanisms, and optoelectronic performances. Meanwhile, the applications of wavelength-selective PDs in image sensing for single-/dual-color imaging, full-color imaging, and X-ray imaging are introduced. Finally, the remaining challenges and perspectives in this emerging field are presented.

De Novo Studies of Working Mechanisms for Self-Driven Narrowband Perovskite Photodetectors

Self-driven narrowband perovskite photodetectors have recently attracted significant attention due to their simple preparation, high performance, and amenability for system integration. However, the origin of narrowband photoresponse and the related regulation mechanisms still remains elusive. To address these issues, we herein perform a systematic investigation by formulating an analytic model in conjunction with finite element simulation. The optical and electrical simulations have resulted in design principles for perovskite narrowband photodetectors in terms of the dependence of external quantum efficiency (EQE) on perovskite layer thickness, doping concentration, and band gap as well as trap state concentration. Careful investigations on the profiles of electric field, current, and optical absorption reveal the dependence of narrowband EQE on the direction of incident light and perovskite doping types: only p-type perovskite can yield the narrowband photoresponse for illumination from the hole transport layer (HTL) side. The simulation results demonstrated in this study shed new light on the mechanism of perovskite-based narrowband photodetectors and provide valuable guidance for their design.

Many-Body Correlations and Exciton Complexes in CsPbBr3 Quantum Dots

All-inorganic lead-halide perovskite (LHP) (CsPbX₃ , X = Cl, Br, I) quantum dots (QDs) have emerged as a competitive platform for classical light-emitting devices (in the weak light-matter interaction regime, e.g., LEDs and laser), as well as for devices exploiting strong light-matter interaction at room temperature. Many-body interactions and quantum correlations among photogenerated exciton complexes play an essential role, for example, by determining the laser threshold, the overall brightness of LEDs, and the single-photon purity in quantum light sources. Here, by combining cryogenic single-QD photoluminescence spectroscopy with configuration-interaction (CI) calculations, the size-dependent trion and biexciton binding energies are addressed. Trion binding energies increase from 7 to 17 meV for QD sizes decreasing from 30 to 9 nm, while the biexciton binding energies increase from 15 to 30 meV, respectively. CI calculations quantitatively corroborate the experimental results and suggest that the effective dielectric constant for biexcitons slightly deviates from the one of the single excitons, potentially as a result of coupling to the lattice in the multiexciton regime. The findings here provide a deep insight into the multiexciton properties in all-inorganic LHP QDs, essential for classical and quantum optoelectronic devices.

Tunable Multiband Halide Perovskite Tandem Photodetectors with Switchable Response

Photodetectors with multiple spectral response bands have shown promise to improve imaging and communications through the switchable detection of different photon energies. However, demonstrations to date have been limited to only two bands and lack capability for fast switching in situ. Here, we exploit the band gap tunability and capability of all-perovskite tandem solar cells to demonstrate a new device concept realizing four spectral bands of response from a single multijunction device, with fast, optically controlled switching between the bands. The response to monochromatic light is highly selective and narrowband without the need for additional filters and switches to broader response bands on applying bias light. Sensitive photodetection above 6 × 10¹¹ Jones is demonstrated in all modes, with rapid switching response times of <250 ns. We demonstrate proof of principle on how the manipulation of the modular multiband detector response through light conditions enables diverse applications in optical communications with secure encryption.

Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses

Narrowband photodetectors (NPDs) with the capability of detecting light within a selective wavelength range are in high demand for numerous emerging applications such as imaging systems, machine vision, and optical communication. Halide perovskite materials have been developed for eliminating the current complex filtering systems in NPDs due to their beneficial properties, while currently NPDs using perovskite materials are limited by hardly fully eliminated short wavelength response, low charge collection efficiency (CCE), complex fabrication process, and so forth. Herein, a series of perovskite single-crystalline heterojunctions (PSCHs) with a structure of Bi-MAPbX3/MAPbY3 are fabricated by liquid phase epitaxy for filter-free narrowband detection. By varying the halide component in the PSCH, the PSCH-based NPDs can realize continuously tunable spectral response range from blue to NIR regions and ultra-narrow full width at half-maximum (FWHM) of <20 nm. Specifically, the PSCH-based NPD with a high CCE under a large electric filed shows a high spectra rejection ratio of >1000, a fast response speed with rise/fall time of ∼160/∼225 μs, and long-term stability more than 3 months in ambient air. This work provides a simple strategy for designing low-cost and high-performance filter-free NPDs with a tunable spectral response.

Broadband-tunable spectral response of perovskite-on-paper photodetectors using halide mixing

Paper offers a low-cost and widely available substrate for electronics. It possesses alternative characteristics to silicon, as it shows low density and high flexibility, together with biodegradability. Solution processable materials, such as hybrid perovskites, also present light and flexible features, together with a huge tunability of the material composition with varying optical properties. In this study, we combine paper substrates with halide-mixed perovskites for the creation of low-cost and easy-to-prepare perovskite-on-paper photodetectors with a broadband-tunable spectral response. From the bandgap tunability of halide-mixed perovskites we create photodetectors with a cut-off spectral onset that ranges from the NIR to the green region, by increasing the bromide content on MAPb(I_1-xBr_x)₃ perovskite alloys. The devices show a fast and efficient response. The best performances are observed for pure I and Br perovskite compositions, with a maximum responsivity of ∼400 mA W^-1 on the MAPbBr₃ device. This study provides an example of the wide range of possibilities that the combination of solution processable materials with paper substrates offers for the development of low-cost, biodegradable and easy-to-prepare devices.

Two-Dimensional Perovskite (PEA)2PbI4 Two-Color Blue-Green Photodetector

Perovskite materials have been widely used to fabricate solar cells, laser diodes and other photodevices, owing to the advantage of high absorption coefficient, long carrier life and shallow defect energy levels. However, due to easy hydrolysis, it is difficult to fabricate perovskite micro-nano devices. Herein, we developed a water-free device fabrication technology and fabricated a two-dimensional (C₆H₅C₂H₄NH₃)₂PbI₄ ((PEA)₂PbI₄) two-color blue-green light detector, which exhibits high detection performance under the illumination of two-color lasers (λ = 460 nm, 532 nm). Compared with bulk devices, the dark current of the fabricated devices (10⁻¹¹ A) was reduced by 2 orders of magnitude. The peak responsivity and detectivity are about 1 A/W and 10¹¹ Jones, respectively. The photodetection performance of the device is basically the same under the two-color lasers. Our results provide a new process to fabricate perovskite microelectronic devices, and the fabricated photodetector shows great application prospects in underwater detection, owing to the blue-green window existing in water.

Halide perovskite single crystals: growth, characterization, and stability for optoelectronic applications

Recently, metal halide perovskite materials have received significant attention as promising candidates for optoelectronic applications with tremendous achievements, owing to their outstanding optoelectronic properties and facile solution-processed fabrication. However, the existence of a large number of grain boundaries in perovskite polycrystalline thin films causes ion migration, surface defects, and instability, which are detrimental to device applications. Compared with their polycrystalline counterparts, perovskite single crystals have been explored to realize stable and excellent properties such as a long diffusion length and low trap density. The development of growth techniques and physicochemical characterizations led to the widespread implementation of perovskite single-crystal structures in optoelectronic applications. In this review, recent progress in the growth techniques of perovskite single crystals, including advanced crystallization methods, is summarized. Additionally, their optoelectronic characterizations are elucidated along with a detailed analysis of their optical properties, carrier transport mechanisms, defect densities, surface morphologies, and stability issues. Furthermore, the promising applications of perovskite single crystals in solar cells, photodetectors, light-emitting diodes, lasers, and flexible devices are discussed. The development of suitable growth and characterization techniques contributes to the fundamental investigation of these materials and aids in the construction of highly efficient optoelectronic devices based on halide perovskite single crystals.

Harnessing of Spatially Confined Perovskite Nanocrystals Using Polysaccharide-based Block Copolymer Systems

Metal halide perovskite nanocrystals (PVSK NCs) are generally unstable upon their transfer from colloidal dispersions to thin film devices. This has been a major obstacle limiting their widespread application. In this study, we proposed a new approach to maintain their exceptional optoelectronic properties during this transfer by dispersing brightly emitting cesium lead halide PVSK NCs in polysaccharide-based maltoheptaose-block-polyisoprene-block-maltoheptaose (MH-b-PI-b-MH) triblock copolymer (BCP) matrices. Instantaneous crystallization of ion precursors with favorable coordination to the sugar (maltoheptaose) domains produced ordered NCs with varied nanostructures of controlled domain size (≈10-20 nm). Confining highly ordered and low dimension PVSK NCs in polysaccharide-based BCPs constituted a powerful tool to control the self-assembly of BCPs and PVSK NCs into predictable structures. Consequently, the hybrid thin films exhibited excellent durability to humidity and stretchability with a relatively high PL intensity and photoluminescence quantum yield (>70%). Furthermore, stretchable phototransistor memory devices were produced and maintained with a good memory ratio of 10⁵ and exhibited a long-term memory retention over 10⁴ s at a high strain of 100%.

Electrically Modulated Near-Infrared/Visible Light Dual-Mode Perovskite Photodetectors

Dual-mode photodetectors (PDs) have attracted increasing interest owing to their potential optoelectrical applications. However, the widespread use of PDs is still limited by the high cost of epitaxial semiconductors. In contrast, the solution processability and wide spectral tunability of perovskites have led to the development of various inexpensive and high-performance optoelectronic devices. In this study, we develop a high-performance electronically modulated dual-mode PD with near-infrared (NIR) narrowband and visible light broadband detection based on organic-inorganic hybrid methylammonium lead halide perovskite (MAPbX₃; MA = CH₃NH₃ and X = Cl, Br, and I) single crystals with a pnp configuration. The operating mode of the dual-mode PD can be switched according to voltage bias polarity because the photon absorption region and carrier transport performance are tuned at different bias voltages. The dual-mode PD exhibits a NIR light responsivity of 0.244 A/W and a narrow full width at half-maximum of ∼12 nm at 820 nm at positive voltages and an average visible light responsivity of ∼0.13 A/W at negative voltages. The detectivities of both modes are high (∼10¹² Jones), and the linear dynamic range is wide (>100 dB). Our study provides a new method for fabricating multifunctional PDs and can expand their application in integrated imaging systems.

Spray-Coating Thick Films of All-Inorganic Halide Perovskites for Filterless Narrowband Photodetectors

A significant challenge facing perovskite narrowband photodetectors is making high-quality and thick enough films. Here, we report a facile one-step spray-coating approach to deposit cesium lead halide perovskite thick films for filterless narrowband photodetectors, which exhibited a specific detectivity of 2.43 × 10¹⁰ Jones at 655 nm with an fwhm of 25 nm. We demonstrated that both substrate temperature and deposition time during the spray-coating process are key factors that govern the thickness and morphology of perovskite films. The photodetection behavior was dependent on the film thickness, and the narrowband photoresponse was recorded at a 3.9 μm thickness. We discovered that the internal electric field also plays a critical role in determining the narrowband photoresponse behavior. A distinct photoresponse behavior was observed when respectively applying a reverse bias and a forward bias, which is ascribed to the trade-off between the charge-trapping effect and charge extraction under the internal built-in electric field in different biased conditions. Through changing the halogen composition of perovskites from CsPbCl₂Br to CsPbI₂Br, the peak position of the narrowband spectral photoresponse was observed to shift from 460 to 660 nm. This study not only offers a controllable spray-coating approach to develop thick perovskite films but also provides an important guidance for the rational design of filterless narrowband photodetectors for practical applications in industrial control, visual imaging, and biological sensing.

All Optical Switching through Anistropic Gain of CsPbBr3 Single Crystal Microplatelet

Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr₃ microplatelets (MP) with anisotropic orthorhombic phase. Optical gain of CsPbBr₃ single crystal MP was investigated via microscale variable stripe-length measurement. A polarization-dependent optical gain was observed, and the gain along [002] was larger than that of [1-10]. The behavior was attributed to the lowest energy transition dipole moment of [002] induced by the smaller deviation of Br-Pb-Br bond from the perfect lattice. Along the [002] direction, we obtained the optical gain value up to 5077 cm^-1, which is the record value ever reported. Moreover, all optical switching of lasing is realized by periodical polarized excitation. Our results provide new perceptions in the design of novel functional anisotropic devices based on perovskite micro/nanostructures.

Room-Temperature, Highly Pure Single-Photon Sources from All-Inorganic Lead Halide Perovskite Quantum Dots

Attaining pure single-photon emission is key for many quantum technologies, from optical quantum computing to quantum key distribution and quantum imaging. The past 20 years have seen the development of several solid-state quantum emitters, but most of them require highly sophisticated techniques (e.g., ultrahigh vacuum growth methods and cryostats for low-temperature operation). The system complexity may be significantly reduced by employing quantum emitters capable of working at room temperature. Here, we present a systematic study across ∼170 photostable single CsPbX3 (X: Br and I) colloidal quantum dots (QDs) of different sizes and compositions, unveiling that increasing quantum confinement is an effective strategy for maximizing single-photon purity due to the suppressed biexciton quantum yield. Leveraging the latter, we achieve 98% single-photon purity (g(2)(0) as low as 2%) from a cavity-free, nonresonantly excited single 6.6 nm CsPbI3 QDs, showcasing the great potential of CsPbX3 QDs as room-temperature highly pure single-photon sources for quantum technologies.

Vertical Heterogeneous Integration of Metal Halide Perovskite Quantum-Wires/Nanowires for Flexible Narrowband Photodetectors

Charge collection narrowing (CCN) has been reported to be an efficient strategy to achieve optical filter-free narrowband photodetection (NPD) with metal halide perovskite (MHP) single crystals. However, the necessity of utilizing thick crystals in CCN limits their applications in large scale, flexible, self-driven, and high-performance optoelectronics. Here, for the first time, we fabricate vertically integrated MHP quantum wire/nanowire (QW/NW) array based photodetectors in nanoengineered porous alumina membranes (PAMs) showing self-driven broadband photodetection (BPD) and NPD capability simultaneously. Two cutoff detection edges of the NPDs are located at around 770 and 730 nm, with a full-width at half-maxima (fwhm) of around 40 nm. The optical bandgap difference between the NWs and the QWs, in conjunction with the high carrier recombination rate in QWs, contributes to the intriguing NPD performance. Thanks to the excellent mechanical flexibility of the PAMs, a flexible NPD is demonstrated with respectable performance. Our work here opens a new pathway to design and engineer a nanostructured MHP for novel color selective and full color sensing devices.

High-performance dual-mode ultra-thin broadband CdS/CIGS heterojunction photodetector on steel

An ultra-thin CdS/CIGS heterojunction photodiode fabricated on steel firstly exhibits dual-mode broadband photodetection from ultraviolet to near infrared spectrum. In the photovoltaic mode, the CIGS photodiode, working as a self-driven photodetector, shows an outstanding photodetection capability (under a light power density of 20 µW cm^-2 at 680 nm), reaching a record detectivity of ∼4.4×10¹² Jones, a low noise equivalent power (NEP) of 0.16 pW Hz^-1/2 and a high Ilight/Idark ratio of ∼10³, but a relatively low responsivity of ∼0.39 A W^-1 and an external quantum efficiency (EQE) of ∼71%. Working under the same illumination but in the photoconductive mode (1 V reverse bias), the responsivity and EQE are significantly enhanced to 1.24 A W^-1 and 226%, respectively, but with a relatively low detectivity of 7×10¹⁰ Jones and a higher NEP of 10.1 pW Hz^-1/2. To explain these results, a corrected photoconductive gain (G) model indicates that minority electrons could be localized in the defects, surface states and depletion region of the CIGS photodiode, causing excess hole accumulation in the ultra-thin CIGS photodiode and thus high EQE over 100% (G over 1).

A-Site Substitute for Fabricating All-Inorganic Perovskite CsPbCl3 with Application in Self-Powered Ultraviolet Photodetectors

Because of its stable chemical properties and wide band gap, CsPbCl₃ perovskite has shown great application prospects in ultraviolet photodetectors (UPDs). However, the poor solubility of CsCl in organic solvents impedes the fabrication of high-quality CsPbCl₃ films. Herein, we introduced an A-site substitute route for fabricating a high-quality CsPbCl₃ microcrystalline (MC) film by spin-coating cesium acetate on a MAPbCl₃ MC film followed by a high-temperature annealing process. To enhance the device performance of the FTO/SnO₂/CsPbCl₃ MCs/carbon structure UPD, a pressure-assisted annealing strategy was carried out, which reduced the void density and surface roughness of the microcrystal film. Finally, our optimized PDs showed high device performances with an on/off ratio of 6 × 10⁴, a responsivity of 0.13 A W^-1, a detectivity of as high as 1.07 × 10¹² Jones, and a rise/fall time of 10/24 μs. Moreover, our unpacked PDs showed good storage and light stability. Our results lay a foundation for the application of all inorganic perovskite in the ultraviolet region.

Fabry-Perot Mode-Limited High-Purcell-Enhanced Spontaneous Emission from In Situ Laser-Induced CsPbBr3 Quantum Dots in CsPb2Br5 Microcavities

The patterned metal halide perovskites exhibit novel photophysical properties and high performance in photonic applications. Here, we show that a UV continuous wave laser can induce in situ crystallization of individual and patterned CsPbBr₃ quantum dots (QDs) inside the CsPb₂Br₅ microplatelets. The microplatelet acts as a natural Fabry-Perot cavity and causes the high-Purcell-effect-enhanced (by 287 times) cavity mode spontaneous emission of the embedded CsPbBr₃ QDs. The luminescence exhibits a superlinear emission intensity-excitation intensity relation I(p) ∝ p^2.83, and the exponent is much bigger than that of the free-space exciton spontaneous emission, suggesting arising of stimulated emission at higher photon concentrations. These laser-driven crystallized and patterned cavity mode luminescent perovskite QDs in a waterproof wider-bandgap perovskite microcavity act as an ideal platform for studying the cavity quantum electrodynamics phenomena and for applications in information storage and encryption, anticounterfeiting, and low-threshold lasers.

Efficient Photoluminescence of Manganese-Doped Two-Dimensional Chiral Alloyed Perovskites

In this work, we introduced chiral cations into the achiral two-position layered perovskite system for the first time to form an alloyed system that still retains a clear layered structure. In addition, in order to explore the potential photoelectric properties of the alloyed system, manganese ions were doped into the alloyed system. The XRD pattern shows that the steady-state absorption and emission spectra of the alloyed system have a large structural distance, while the doped manganese system exhibits a two-color photoluminescence phenomenon. In addition, combined with time-resolved fluorescence and testing, the photoluminescence characteristics and ultralong lifetime of Mn-doped samples were further characterized. The exciton band structure of the lead halide perovskite framework can be adjusted through this design strategy. Mn²⁺ ions can form characteristic energy levels in the host system and then energy transfer of excitons occurs, which is of great significance for the development of new functional and high-efficiency photoluminescent materials.

Room-Temperature Synthesis of Air-Stable Near-Infrared Emission in FAPbI3 Nanoparticles Embedded in Silica

Hybrid organic-inorganic and all-inorganic metal halide perovskite nanoparticles (PNPs) have shown their excellent characteristics for optoelectronic applications. We report an atmospheric process to embed formamidinium CH(NH2)2PbI3 (FAPbI3) PNPs in silica protective layer at room temperature (approximately 26 °C) employing (3-aminopropyl) triethoxysilane (APTES). The resulting perovskite nanocomposite (PNCs) achieved a high photoluminescence (PL) quantum yield of 58.0% and good stability under atmospheric moisture conditions. Moreover, the PNCs showed high PL intensity over 1 month of storage (approximately 26 °C) and more than 380 min of PNCs solutions in DI water. The studied near-infrared (NIR) light-emitting diode (LED) combined a NIR-emitting PNCs coating and a blue InGaN-based chip that exhibited a 788 nm electroluminescence spectrum of NIR-LEDs under 2.6 V. This may be a powerful tool to track of muscle and disabled patients in the detection of a blood vessel.

Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built-In Electric Field Manipulated by Unintentional Doping

Organic-inorganic halide perovskites have demonstrated significant light detection potential, with a performance comparable to that of commercially available photodetectors. In this study, a general design guideline, which is applicable to both inverted and regular structures, is proposed for high-performance perovskite photodiodes through an interfacial built-in electric field (E) for efficient carrier separation and transport. The interfacial E generated at the interface between the active and charge transport layers far from the incident light is critical for effective charge carrier collection. The interfacial E can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post-annealing time and temperature. Employing the proposed design guideline, the inverted and regular perovskite photodiodes exhibit the external quantum efficiency of 83.51% and 76.5% and responsivities of 0.37 and 0.34 A W-1 , respectively. In the self-powered mode, the dark currents reach 7.95 × 10-11 and 1.47 × 10-8 A cm-2 , providing high detectivities of 7.34 × 1013 and 4.96 × 1012 Jones, for inverted and regular structures, respectively, and a long-term stability of at least 1600 h. This optimization strategy is compatible with existing materials and device structures and hence leads to substantial potential applications in perovskite-based optoelectronic devices.

High-Responsivity, Fast, and Self-Powered Narrowband Perovskite Heterojunction Photodetectors with a Tunable Response Range in the Visible and Near-Infrared Region

In recent years, narrowband photodetectors (PDs) have been widely used in color imaging, spectral detection or discrimination, defense, and scientific research due to their special spectral selective responses. In this work, by combining organic-inorganic hybrid perovskite layers of different band gaps and thicknesses, a series of narrowband perovskite heterojunction PDs with a continuously adjustable spectral range in the visible and near-infrared range are designed and prepared. The PDs can achieve a narrowband photoresponse with a full width at half-maximum (FWHM) of less than 50 nm and a light rejection ratio (between 780 and 532 nm) of over 1100 and exhibit excellent photoresponse performances with an external quantum efficiency (EQE), responsivity (R), and detectivity (D*) as high as 50.3%, 0.331 A/W, and 4.27 × 10¹⁰ Jones, respectively. More importantly, the photoresponses of the PDs at zero bias are as good as those at the reverse bias voltages, indicating the outstanding self-powered property. In addition, a fast response time of ∼180/∼200 μs is obtained in the narrowband perovskite heterojunction, and the response speed nearly remains constant for different PDs in the whole tunable wavelength range, demonstrating the suitable and stable structure of the heterojunction, as well as the high crystalline quality of the perovskite layers. This work definitely provides a simple strategy for designing low-cost, high-photoresponsivity, fast speed, and self-powered narrowband PDs with a tunable spectral range.

Broadband Detection of X-ray, Ultraviolet, and Near-Infrared Photons using Solution-Processed Perovskite-Lanthanide Nanotransducers

Solution-processed metal-halide perovskites hold great promise in developing next-generation low-cost, high-performance photodetectors. However, the weak absorption of perovskites beyond the near-infrared spectral region posts a stringent limitation on their use for broadband photodetectors. Here, the rational design and synthesis of an upconversion nanoparticles (UCNPs)-perovskite nanotransducer are presented, namely UCNPs@mSiO₂ @MAPbX₃ (X = Cl, Br, or I), for broadband photon detection spanning from X-rays, UV, to NIR. It is demonstrated that, by in situ crystallization and deliberately tuning the material composition in the lanthanide core and perovskites, the nanotransducers allow for a high stability and show a wide linear response to X-rays of various dose rates, as well as UV/NIR photons of various power densities. The findings provide an opportunity to explore the next-generation broadband photodetectors in the field of high-quality imaging and optoelectronic devices.

High-responsivity broadband photodetection of an ultra-thin In2S3/CIGS heterojunction on steel

${\rm{Cu}}({\rm{In}},{\rm{Ga}}){\rm{S}}{{\rm{e}}_2}$ (CIGS) is a promising light harvesting material for large-area broadband photodetection, but it has been rarely studied up to now. Here an In₂S₃/CIGS heterojunction photodiode on steel is shown to be highly broadband photo-sensitive, with a photoresponsivity over 0.8 A/W, an external quantum efficiency over 100%, and a detectivity over 8×10¹⁰ Jones from 505 to 910nm under a reverse bias of 1 V. Moreover, the CIGS photodiode exhibits an outstanding weak light detection ability (i.e., at light power density of ${{20}}\;\unicode{x00B5} {\rm{W/c}}{{\rm{m}}^2}$), reaching a record responsivity of 2.06 A/W, an impressive EQE of 293%, and a good detectivity of ${2.3} \times {{1}}{{{0}}^{11}}$ Jones at 870 nm under 1 V reverse bias. Importantly, the CIGS photodiode, working as a self-powered photodetector, under 0 V, shows a record detectivity of ${\sim}{3.4} \times {{1}}{{{0}}^{12}}$ Jones with a high responsivity of ${\sim}{0.44}\;{\rm{A/W}}$ and a high EQE of ${\sim}{{63}}\%$, at 870 nm.

Semi-transparent reduced graphene oxide photodetectors for ultra-low power operation

The emerged demand for high-performance systems promotes the development of two-dimensional (2D) graphene-based photodetectors. However, these graphene-based photodetectors are usually fabricated by an expensive photolithography and complicated transferred process. Here, a semi-transparent reduced graphene oxide (rGO) photodetector on a polyethylene terephthalate (PET) substrate with ultra-low power operation by simple processes is developed. The photodetector has achieved a transmittance about 60%, a superior responsivity of 375 mA/W and a high detectivity of 10¹² Jones at a bias of -1.5 V. Even the photodetector is worked at zero bias, the photodetector exhibits a superior on/off ratio of 12. Moreover, the photoresponse of such photodetector displays little reduction after hundred times bending, revealing that the photodetector is reliable and robust. The proposed fabrication strategy of the photodetector will be beneficial to the integration of semi-transparent and low-power wearable devices in the future.

Recent Advances in Perovskite Photodetectors for Image Sensing

In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.

Fluorescent dynamics of CsPbBr3 nanocrystals in polar solvents: a potential sensor for polarity

During synthesis, device processes, and applications of perovskite nanocrystals (NCs), there are usually inevitable interactions between perovskite NCs and polar solvents. To elaborately control the properties of perovskite NCs, investigating the effects of solvent polarity on perovskite NCs is thus highly important. Herein, fluorescent variations induced by different solvents into CsPbBr₃ NCs solution are systematically studied. In this report, it is found that when CsPbBr₃ NCs are treated with polar solvents, the fluorescence intensity decreases with a general redshift of fluorescence peak position. Moreover, the fluorescence quenching and peak position shift amplitude monotonously increase with the solvent polarity. Absorption spectra and fluorescent lifetime suggest that, with addition of polar solvents, the surface of NCs are destroyed and defect states are generated, leading to the fluorescent variations. Besides, dielectric constant of the solvent also increases with polarity, which may weaken the quantum confinement effect and decrease the exciton binding energy. We find the fluorescence may slightly blue shift if the emission of free carrier is strong enough with certain solvents, such as dimethylsulfoxide (DMSO). We also find the fluorescence intensity generally deceases to a stable state in 2 min, indicating quick interactions between CsPbBr₃ NCs and solvents. However, water continuously quenches the fluorescence of CsPbBr₃ NCs up to 72 h due to the poor miscibility between water and n-hexane. This work not only provides a comprehensive understanding on the fluorescent dynamics of CsPbBr₃ NCs in polar solvents but also affords a potential fluorescent indicator for solvent polarity.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Self-Driven Perovskite Narrowband Photodetectors with Tunable Spectral Responses

Narrowband photodetectors with tunable spectral responses are highly desirable for applications in image sensing, machine vision, and optical communication. Herein, a filterless and self-driven perovskite narrowband photodetector (PNPD) based on the defect-assisted charge collection narrowing (CCN) mechanism is reported, which is enabled by a high-quality thick perovskite film. By adjusting the halide component of the perovskite layer, the bandgap is successfully modulated and the corresponding narrowband photodetectors show a wide spectral response range from the red to the near-infrared (NIR), all with full-widths at half maximum (FWHMs) below 30 nm. Specifically, the methylammonium lead iodide (MAPbI₃ ) narrowband photodetector exhibits a characteristic detection peak at 800 nm with a very low noise current of ≈0.02 pA Hz^-1/2 , a high specific detectivity up to 1.27 × 10¹² Jones, and a fast response speed with rise/fall time of 12.7/6.9 µs. Impressively, these values are among the highest of their kind reported previously, and allow demonstration of narrowband imaging. The excellent performance of self-driven PNPDs lights up their prospect in high-efficiency optoelectronic devices without external power sources.

Panchromatically Responsive Organic Photodiodes utilizing a Noninvasive Narrowband Color Electrode

Organic photodiodes (OPDs) are emerging as potential candidates in image sensors owing to their high sensitivity and submicron photoactive layer thickness. For OPDs to be more competitive, it is necessary to develop an economical fabrication process and improve their narrowband spectral response from visible to near-infrared (NIR). In this study, panchromatic OPDs with a remarkable narrowband response from visible to NIR are developed by integrating a solution-processed optical filter-electrode (OF-electrode) and a panchromatic organic photoactive layer. Solution-processable TiO₂ nanoparticles (sTNPs) bound to an acetylacetone ligand are used to construct the OF-electrode, which had the structure Ag/sTNP/Ag, and a ternary blend of a polymer donor, a nonfullerene acceptor, and a fullerene acceptor is used for preparing the panchromatic organic photoactive layer. Direct integration of the OF-electrode with the organic photoactive layer eliminates the need for additional OF installation, without damaging the underlying organic photoactive layer. Variation of the sTNP layer thickness controls the color filtering wavelength to vary from visible to NIR, with exceptionally narrow full width at half-maximum (fwhm) values of 48-82 nm and transparency values of 50-70%. Owing to their selective response for the desired color and their capability to minimize noise from other colors, the OPDs exhibit high sensitivity values of 2.82 × 10¹², 3.02 × 10¹², and 3.94 × 10¹² cm Hz^0.5/W (Jones) with narrow fwhm values of 110, 91, and 75 nm at a peak transmittance exceeding 65% for blue, green, and red, respectively. Furthermore, they detect NIR light at a wavelength of 950 nm with a narrow fwhm value of 51 nm and a high sensitivity of 3.78 × 10¹² cm Hz^0.5/W (Jones).

Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films

Semiconductor surface patterning at the nanometer scale is crucial for high-performance optical, electronic, and photovoltaic devices. To date, surface nanostructures on organic-inorganic single-crystal perovskites have been achieved mainly through destructive methods such as electron-beam lithography and focused ion beam milling. Here, we present a solution-based epitaxial growth method for creating nanopatterns on the surface of perovskite monocrystalline thin films. We show that high-quality monocrystalline arbitrary nanopatterns can form in solution with a low-cost simple setup. We also demonstrate controllable photoluminescence from nanopatterned perovskite surfaces by adjusting the nanopattern parameters. A seven-fold enhancement in photoluminescence intensity and a three-time reduction of the surface radiative recombination lifetime are observed at room temperature for nanopatterned MAPbBr₃ monocrystalline thin films. Our findings are promising for the cost-effective fabrication of monocrystalline perovskite on-chip electronic and photonic circuits down to the nanometer scale with finely tunable optoelectronic properties.

Spectrum projection with a bandgap-gradient perovskite cell for colour perception

Optoelectronic devices for light or spectral signal detection are desired for use in a wide range of applications, including sensing, imaging, optical communications, and in situ characterization. However, existing photodetectors indicate only light intensities, whereas multiphotosensor spectrometers require at least a chip-level assembly and can generate redundant signals for applications that do not need detailed spectral information. Inspired by human visual and psychological light perceptions, the compression of spectral information into representative intensities and colours may simplify spectrum processing at the device level. Here, we propose a concept of spectrum projection using a bandgap-gradient semiconductor cell for intensity and colour perception. Bandgap-gradient perovskites, prepared by a halide-exchanging method via dipping in a solution, are developed as the photoactive layer of the cell. The fabricated cell produces two output signals: one shows linear responses to both photon energy and flux, while the other depends on only photon flux. Thus, by combining the two signals, the single device can project the monochromatic and broadband spectra into the total photon fluxes and average photon energies (i.e., intensities and hues), which are in good agreement with those obtained from a commercial photodetector and spectrometer. Under changing illumination in real time, the prepared device can instantaneously provide intensity and hue results. In addition, the flexibility and chemical/bio-sensing of the device via colour comparison are demonstrated. Therefore, this work shows a human visual-like method of spectrum projection and colour perception based on a single device, providing a paradigm for high-efficiency spectrum-processing applications.

Thickness-Controlled Wafer-Scale Single-Crystalline MAPbBr3 Films Epitaxially Grown on CsPbBr3 Substrates by the Droplet-Evaporated Crystallization Method

The perovskite single-crystalline thin films, which are free of grain boundaries, would be highly desirable in boosting device performance due to their high carrier mobility, low trap density, and large carrier diffusion length. Herein, a facile room-temperature approach to epitaxially grow MAPbBr₃ single-crystalline films on CsPbBr₃ substrates by the droplet-evaporated crystallization method is reported. A large-area continuous MAPbBr₃ single-crystal film about 15 × 15 mm² in size has been heteroepitaxially grown on CsPbBr₃ substrates. The surface morphology, composition, and single crystallinity were characterized by a scanning electron microscope, an energy-dispersive spectrometer, an electron probe microanalyzer, and high-resolution X-ray diffractions, respectively. The thickness of the films could be adjusted from 1 to 18 μm by varying the concentration of the solution from 10 to 50 wt %. The epitaxial relationship of MAPbBr₃ (010)∥CsPbBr₃ (010), MAPbBr₃ [101]∥CsPbBr₃ [200] was authenticated using XRD, pole figure, and TEM. The low defect density of 4.6 × 10¹¹ cm^-3 and high carrier mobility of 261.94 cm² V^-1 s^-1 of the MAPbBr₃ film measured by the SCLC method are comparable to those of bulk single crystals. An on/off ratio of ∼113 was achieved according to current-voltage curves. Our research demonstrates the first large-area single-crystal heterojunction of a hybrid perovskite with an all-inorganic perovskite, which may show unique properties in optoelectronic applications.