Lead-Free Perovskite Photodetectors: Progress, Challenges, and Opportunities

Highly Efficient Flexible Photodetectors Based on Pb-Free CsBi3I10 Perovskites

Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.

Piperidine and Pyridine Series Lead-Free Dion-Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors

Two-dimensional (2D) organic-inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion-Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V-1 s-1 requiring a low threshold voltage of only -2.5 V at a drain voltage of -40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.

Modulation of Photoinduced Phase Segregation and Stress-Driven Nanoscale Cracking in Hybrid Halide Perovskite Solar Cells

The negative effect of photoinduced halide segregation (PIHS) on the properties of hybrid halide perovskites poses a major obstacle for its future commercial application. Therefore, the in-depth understanding of halide-ion segregation and its causes is an urgent and intractable problem. When PIHS reaches a certain threshold, it will aggravate the deterioration of the film surface morphology and form nanoscale cracks. Herein, the formation mechanism and types of cracks are revealed by exploring the stress distribution in the film. Using the femtosecond time-resolved transient absorption spectroscopy, the ultrafast formation of the iodine rich phase is observed, which appears earlier than the bromine rich phase. In addition, the introduction of organic ligand didodecyldimethylammonium bromide can significantly inhibit PIHS and improve the surface morphology of the film, which can promote the device efficiency from 9.63 to 11.20%. This work provides a novel perspective for the exploration of the PIHS.

Surface Engineering of Perovskite Single Crystals by Atomic Layer Deposited Tin Oxide for Optical Communication

Perovskite single crystals with excellent physical properties have broad prospects in the field of optoelectronics. However, the presence of dangling bonds, surface dislocations, and chemical impurities results in high surface defect density and sensitivity to humidity. Unfortunately, there are relatively few surface engineering strategies for single perovskite single crystals. We present a strategy utilizing atomic layer deposited SnOx to passivate surface defects in perovskite single crystals. The photodetector prepared based on the modified FAPbBr3 single crystals exhibits a low dark current of 1.89 × 10-9 A at a 5 V bias, close to 4 times lower with respect to the pristine device, a high detectivity of 2.3 × 1010 jones, and a fast response time of 27 μs. Moreover, the photodetectors feature long-term operational stability because the presence of a dense SnOx capping layer hinders the ingress of moisture and diffusion of ions. We further demonstrate the promise of our perovskite single crystal detectors for real-time subaqueous optical communication.

Highly stable mixed-phase Cs-Cu-I films with tunable optoelectronic properties for UVB photodetector applications

Ultraviolet (UV) photodetector plays an important role in military, civilian and people's daily life, and is an indispensable part of spectral detection. However, photodetectors target at the UVB region (280-320 nm) are rarely reported, and the devices detected by medium-wave UV light generally have problems such as low detection rate, low sensitivity, and poor stability, which are difficult to meet the market application needs. Herein, Cs-Cu-I films with mixed-phase have been prepared by vacuum thermal evaporation. By adjusting the proportion of evaporation sources (CsI and CuI), the optical bandgaps of mixed-phase Cs-Cu-I films can be tuned between 3.7 eV and 4.1 eV. This absorption cut-off edge is exactly at both ends of the UVB band, which indicating its potential application in the field of UVB detection. Finally, the photodetectors based on Cs-Cu-I/n-Si heterojunction are fabricated. The photodetector shows good spectral selectivity for UVB band, and has a photoresponsivity of 22 mA/W, a specific detectivity of 1.83*1011 Jones, an EQE over 8.7% and an on/off ratio above 20.

Integration of One-Dimensional (1D) Lead-Free Perovskite Microbelts onto Silicon for Ultraviolet-Visible-Near-Infrared (UV-vis-NIR) Heterojunction Photodetectors

Lead-free perovskites are considered to be candidates for next-generation photodetectors, because of their excellent charge carrier transport properties and low toxicity. However, their application in integrated circuits is hindered by their inadequate performance and size restrictions. To aim at the development of lead-free perovskite-integrated optoelectronic devices, a CsAg2I3/silicon (CAI/Si) heterojunction is presented in this work by using a spatial confinement growth method, where the in-plane growth of CAI microbelts with high-quality single-crystal characteristics is primarily dependent on the concentration of surrounding precursor solution. The fabricated photodetectors based on the CAI/Si heterojunctions exhibit a broad-spectrum detection capability in the ultraviolet-visible-near-infrared (UV-vis-NIR) range. In addition, the photodetectors show good photoelectric detection performance, including a maximum responsivity of 48.5 mA/W and detectivity of 1.13 × 1011 Jones, respectively. Besides, the photodetectors have a rapid response of 6.5/224 μs and good air stability for over 2 months. This work contributes a new idea to design next-generation optoelectronic devices with high integration density.

Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging

Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2 )2 SnI3 (FASnI3 ) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+ . Consequently, FASnI3 -CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3 -CNI exhibits low dark current (1.04 × 10-9 A cm-2 ), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3 -CNI photodetector. In addition, flexible photodetectors based on FASnI3 -CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3 -CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2 ) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.

Breaking the bottleneck of lead-free perovskite solar cells through dimensionality modulation

The emerging perovskite solar cell (PSC) technology has attracted significant attention due to its superior power conversion efficiency (PCE) among the thin-film photovoltaic technologies. However, the toxicity of lead and poor stability of lead halide materials hinder their commercialization. In this case, after a decade of effort, various categories of lead-free perovskites and perovskite-like materials have been developed, including tin halide perovskites, double perovskites, defect-structured perovskites, and rudorffites. However, the performance of the corresponding devices still falls short of expectations, especially their PCE. The limitations mainly originate from either the unstable lattice structure of these materials, which causes the distortion of their octahedra, or their low dimensionality (e.g., structural and electronic dimensionality)-correlated poor carrier transport and self-trapping effect, accelerating nonradiative recombination. Therefore, understanding the relationship between the structures and performance in these emerging candidates and leveraging these insights to design or modify new lead-free perovskites is of great significance. Herein, we review the variety of dimensionalities in different categories of lead-free perovskites and perovskite-like materials and conclude that dimensionality is an important aspect among the crucial indexes that determine the performance of lead-free PSCs. In addition, we summarize the modulation of both structural and electronic dimensionality, and the corresponding enhanced optoelectronic properties in different categories. Finally, perspectives on the future development of lead-free perovskites and perovskite-like materials for photovoltaic applications are provided. We hope that this review will provide researchers with a concise overview of these emerging materials and help them leverage dimensionality to break the bottleneck in photovoltaic applications.

From C4H7N2Ge0.4Sn0.6Br3 to C6H11N2Ge0.4Sn0.6Br3: Effective Modulation of the Second Harmonic Generation Effect and Optical Band Gap by Planar π-Conjugated Organic Cation Size

In the search for nonlinear optical (NLO) materials with excellent overall performance, we have devoted ourselves to organic-inorganic hybrids consisting of anionic groups containing stereochemically active lone-pair (SCALP) electron cations and organic planar π-conjugated group cations. Accordingly, in this paper, two novel organic-inorganic hybrid metal halides, C4H7N2Ge0.4Sn0.6Br3 (I) and C6H11N2Ge0.4Sn0.6Br3 (II), have been synthesized. The powder second-harmonic technique shows that both C4H7N2Ge0.4Sn0.6Br3 and C6H11N2Ge0.4Sn0.6Br3 have moderately strong second-order nonlinear optical effects, which are about 2.03 (I) and 1.16 (II) times that of KH2PO4 (KDP), respectively. They also have different optical band gaps of 2.75 (I) and 2.88 eV (II) due to the different sizes of the organic cations, and their photoluminescent and thermal properties were also investigated. This work provides new structural insights for the design and modulation of organic-inorganic hybrid halide materials with multiple excellent optical properties.

A zero-dimensional hybrid copper(I) bromide single crystal with highly efficient green emission

Lead-free metal halides are considered as alternatives to lead-based perovskites due to their low toxicity, rich structural diversity, and high luminescence properties. We report millimeter-sized single crystals of a new zero-dimensional (0D) copper(I)-based hybrid material, (AEP)2Cu2Br6·2Br·2H2O (AEP = C6H18N33+), which exhibits bright broadband green photoluminescence (PL) at 510 nm with a Stokes shift of 220 nm and a PL lifetime of 121.1 μs. Density functional theory (DFT) calculations and experimental studies reveal that the green light can be attributed to self-trapping exciton (STE) emission. It is worth mentioning that this crystal has a high photoluminescence quantum yield (PLQY) of 90.5%, which is higher than most copper halides.

Tunable Periodic Nanopillar Array for MAPbI3 Perovskite Photodetectors with Improved Light Absorption

In the field of optoelectronic applications, the vigorous development of organic-inorganic hybrid perovskite materials, such as methylammonium lead triiodide (MAPbI3), has spurred continuous research on methods to enhance the photodetection performance. Periodic nanoarrays can effectively improve the light absorption of perovskite thin films. However, there are still challenges in fabricating tunable periodic patterned and large-area perovskite nanoarrays. In this study, we present a cost-effective and facile approach utilizing nanosphere lithography and dry etching techniques to create a large-area Si nanopillar array, which is employed for patterning MAPbI3 thin films. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) results reveal that the introduction of nanopillar structures did not have a significant adverse effect on the crystallinity of the MAPbI3 thin film. Light absorption tests and optical simulations indicate that the nanopillar array enhances the light intensity within the perovskite films, leading to photodetectors with a responsivity of 11.2 A/W and a detectivity of 7.3 × 1010 Jones at 450 nm in wavelength. Compared with photodetectors without nanostructures, these photodetectors exhibit better visible light absorption. Finally, we demonstrate the application of these photodetector arrays in a prototype image sensor.

Extensible Integrated System for Real-Time Monitoring of Cardiovascular Physiological Signals and Limb Health

In recent decades, the rapid growth in flexible materials, new manufacturing technologies, and wearable electronics design techniques has helped establish the foundations for noninvasive photoelectric sensing systems with shape-adaptability and "skin-like" properties. Physiological sensing includes humidity, mechanical, thermal, photoelectric, and other aspects. Photoplethysmography (PPG), an important noninvasive method for measuring pulse rate, blood pressure, and blood oxygen, uses the attenuated signal obtained by the light absorbed and reflected from living tissue to a light source to realize real-time monitoring of human health status. This work illustrates a patch-type optoelectronic system that integrates a flexible perovskite photodetector and all-inorganic light-emitting diodes (LEDs) to realize the real-time monitoring of human PPG signals. The pulse rate of the human body and the swelling degree of finger joints can be extracted and analyzed using photodetectors, thus monitoring human health for the prevention and early diagnosis of certain diseases. Specifically, this work develops a 3D wrinkled-serpentine interconnection wire that increases the shape adaptability of the device in practical applications. The PPG signal sensor reported in this study has considerable potential for future wearable intelligent medical applications.

Facile Vertical Structure Broadband Photodetectors Enabled by Polyvinylpyrrolidone-Regulated Perovskite and Near-Infrared-Sensitive Lead Phthalocyanine

Broadband photodetectors have drawn tremendous attention in many application areas such as imaging, optical communication, and biochemical sensing. Perovskite is a star material with broad spectral absorption, but it is challenging to develop ultraviolet-visible-near-infrared (UV-Vis-NIR) ultra-broadband photodetectors due to the insufficient absorption in the near-infrared region. Moreover, it is difficult to construct a diode-type photodetector with a simple vertical structure based only on perovskite materials. Here, facile vertical structure broadband photodetectors were fabricated based on heterojunctions that were composed of perovskite MAPbI3 films with UV-Vis absorption spectrum and small organic molecule lead phthalocyanine (PbPc) with strong NIR optical absorption, resulting in UV-Vis-NIR ultra-broadband photodetection. The quality of MAPbI3 films was improved by introducing polyvinylpyrrolidone (PVP) modification, and subsequently, the corresponding MAPbI3/PbPc heterojunction-based photodetectors exhibited rectification characteristics and reduced reverse dark currents. When the PVP mass ratio is 1 wt%, the photodetector achieved the best performance that the spectral response uniformity factor was as high as 0.77, the photoresponsivity exceeded 10 A/W, and the photoresponse time was less than 0.5 ms under a light intensity of 0.013 mW/cm2 in the UV-Vis to NIR spectral range. These results are comparable or superior to those of some inorganic, organic, and perovskite photodetectors reported previously. This study would provide an effective strategy to construct high-performance perovskite photodetectors based on a simple vertical structure, paving the way to the realization of UV-Vis-NIR broadband photodetection.

Ultraviolet-Visible-Short-Wavelength Infrared Broadband and Fast-Response Photodetectors Enabled by Individual Monocrystalline Perovskite Nanoplate

Perovskite-based photodetectors exhibit potential applications in communication, neuromorphic chips, and biomedical imaging due to their outstanding photoelectric properties and facile manufacturability. However, few of perovskite-based photodetectors focus on ultraviolet-visible-short-wavelength infrared (UV-Vis-SWIR) broadband photodetection because of the relatively large bandgap. Moreover, such broadband photodetectors with individual nanocrystal channel featuring monolithic integration with functional electronic/optical components have hardly been explored. Herein, an individual monocrystalline MAPbBr3 nanoplate-based photodetector is demonstrated that simultaneously achieves efficient UV-Vis-SWIR detection and fast-response. Nanoplate photodetectors (NPDs) are prepared by assembling single nanoplate on adjacent gold electrodes. NPDs exhibit high external quantum efficiency (EQE) and detectivity of 1200% and 5.37 × 1012 Jones, as well as fast response with rise time of 80 µs. Notably, NPDs simultaneously achieve high EQE and fast response, exceeding most perovskite devices with multi-nanocrystal channel. Benefiting from the high specific surface area of nanoplate with surface-trap-assisted absorption, NPDs achieve high performance in the near-infrared and SWIR spectral region of 850-1450 nm. Unencapsulated devices show outstanding UV-laser-irradiation endurance and decent periodicity and repeatability after 29-day-storage in atmospheric environment. Finally, imaging applications are demonstrated. This work verifies the potential of perovskite-based broadband photodetection, and stimulates the monolithic integration of various perovskite-based devices.

Engineering graphitic carbon nitride for next-generation photodetectors: a mini review

Semiconductor photodetectors, as photoelectric devices using optical-electrical signal conversion for detection, are widely used in various fields such as optical communication, medical imaging, environmental monitoring, military tracking, remote sensing, etc. Compared to the conventional photodetector materials including silicon, III-V semiconductors and metal sulfides, graphitic carbon nitride (g-C3N4) as a metal-free polymeric semiconductor, has many advantages such as low-price, easy preparation, efficient visible light response, and relatively good thermal stability. In the meantime, the polymer characteristics also endow the g-C3N4 with good mechanical properties. Apart from being used for photo(electro)catalysts during the past decades, the potential use of g-C3N4 in photodetectors has attracted great research interests very recently. In this review, we first briefly introduce the structure and properties of g-C3N4 and the key performance parameters of photodetectors. Then, combining the very recent progress, the review focuses on the active materials, fabrication methods and performance enhancement strategies for g-C3N4 based photodetectors. The existing challenges are discussed and the future development of g-C3N4 based photodetectors is also forecasted.

Hybrid Double Perovskite Derived Halides Based on Bi and Alkali Metals (K, Rb): Diverse Structures, Tunable Optical Properties and Second Harmonic Generation Responses

Double perovskites (DP) have attracted extensive attention due to their rich structures and wide application prospects in the field of optoelectronics. Here, we report 15 new Bi-based double perovskite derived halides with the general formula of A2 BBiX6 (A=organic cationic ligand, B=K or Rb, X=Br or I). These materials are synthesized using organic ligands to coordinate with metal ions with a sp3 oxygen, and diverse structure types have been obtained with distinct dimensionalities and connectivity modes. The optical band gaps of these phases can be tuned by changing the halide, the organic ligand and the alkali metal, varying from 2.0 to 2.9 eV. The bromide phases exhibit increasing photoluminescence (PL) intensity with decreasing temperature, while the PL intensity of iodide phases changes nonmonotonically with temperature. Because the majority of these phases are non-centrosymmetric, second harmonic generation (SHG) responses are also measured for selected non-centrosymmetric materials, showing different particle-size-dependent trends. Our findings give rise to a series of new structural types to the DP family, and provide a powerful synthetic handle for symmetry breaking.

Molecular Tailoring of Pyridine Core-Based Hole Selective Layer for Lead Free Double Perovskite Solar Cells Fabrication

To solve the toxicity issues related to lead-based halide perovskite solar cells, the lead-free double halide perovskite Cs2AgBiBr6 is proposed. However, reduced rate of charge transfer in double perovskites affects optoelectronic performance. We designed a series of pyridine-based small molecules with four different arms attached to the pyridine core as hole-selective materials by using interface engineering. We quantified how arm modulation affects the structure-property-device performance relationship. Electrical, structural, and spectroscopic investigations show that the N3,N3,N6,N6-tetrakis(4-methoxyphenyl)-9H-carbazole-3,6-diamine arm's robust association with the pyridine core results in an efficient hole extraction for PyDAnCBZ due to higher spin density close to the pyridine core. The solar cells fabricated using Cs2AgBiBr6 as a light harvester and PyDAnCBZ as the hole selective layer measured an unprecedented 2.9% power conversion efficiency. Our computed road map suggests achieving ∼5% efficiency through fine-tuning of Cs2AgBiBr6. Our findings reveal the principles for designing small molecules for electro-optical applications as well as a synergistic route to develop inorganic lead-free perovskite materials for solar applications.

Multifunctional Perovskite Photodetectors: From Molecular-Scale Crystal Structure Design to Micro/Nano-scale Morphology Manipulation

Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and self-powered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.

Recent progress in construction methods and applications of perovskite photodetector arrays

Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.

Enhancing the Performance of Perovskite Solar Cells by Introducing 4-(Trifluoromethyl)-1H-imidazole Passivation Agents

Defects in perovskite films are one of the main factors that affect the efficiency and stability of halide perovskite solar cells (PSCs). Uncoordinated ions (such as Pb²⁺, I^-) act as trap states, causing the undesirable non-radiative recombination of photogenerated carriers. The formation of Lewis acid-base adducts in perovskite directly involves the crystallization process, which can effectively passivate defects. In this work, 4-(trifluoromethyl)-1H-imidazole (THI) was introduced into the perovskite precursor solution as a passivation agent. THI is a typical amphoteric compound that exhibits a strong Lewis base property due to its lone pair electrons. It coordinates with Lewis acid Pb²⁺, leading to the reduction in defect density and increase in crystallinity of perovskite films. Finally, the power conversion efficiency (PCE) of PSC increased from 16.49% to 18.97% due to the simultaneous enhancement of open-circuit voltage (V_OC), short circuit current density (J_SC) and fill factor (FF). After 30 days of storage, the PCE of the 0.16 THI PSC was maintained at 61.9% of its initial value, which was 44.3% for the control device. The working mechanism of THI was investigated. This work provides an attractive alternative method to passivate the defects in perovskite.

Recent Progress on Wavelength-Selective Perovskite Photodetectors for Image Sensing

Spectral sensing plays a crucial part in imaging technologies, optical communication, and other fields. However, complicated optical elements, such as prisms, interferometric filters, and diffraction grating, are required for commercial multispectral detectors, which hampers their advance toward miniaturization and integration. In recent years, metal halide perovskites have been emerging for optical-component-free wavelength-selective photodetectors (PDs) because of their continuously tunable bandgap, fascinating optoelectronic properties, and simple preparation processes. In this review, recent advances in wavelength-selective perovskite PDs, including narrowband PDs, dual-band PDs, multispectral-recognizable PDs, and X-ray PDs, are highlighted, with an emphasis on device structure designs, working mechanisms, and optoelectronic performances. Meanwhile, the applications of wavelength-selective PDs in image sensing for single-/dual-color imaging, full-color imaging, and X-ray imaging are introduced. Finally, the remaining challenges and perspectives in this emerging field are presented.

Technology Roadmap for Flexible Sensors

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

Recent developments in lead-free bismuth-based halide perovskite nanomaterials for heterogeneous photocatalysis under visible light

Halide perovskite materials, especially lead-based perovskites, have been widely used for optoelectronic and catalytic applications. However, the high toxicity of the lead element is a major concern that directs the research work toward lead-free halide perovskites, which could utilize bismuth as a promising candidate. Until now, the replacement of lead by bismuth in perovskites has been well studied by designing bismuth-based halide perovskite (BHP) nanomaterials with versatile physical-chemical properties, which are emerging in various application fields, especially heterogeneous photocatalysis. In this mini-review, we present a brief overview of recent progress in BHP nanomaterials for photocatalysis under visible light. The synthesis and physical-chemical properties of BHP nanomaterials have been comprehensively summarized, including zero-dimensional, two-dimensional nanostructures and hetero-architectures. Later, we introduce the photocatalytic applications of these novel BHP nanomaterials with visible-light response, improved charge separation/transport and unique catalytic sites. Due to advanced nano-morphologies, a well-designed electronic structure and an engineered surface chemical micro-environment, BHP nanomaterials demonstrate enhanced photocatalytic performance for hydrogen generation, CO₂ reduction, organic synthesis and pollutant removal. Finally, the challenges and future research directions of BHP nanomaterials for photocatalysis are discussed.

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.

Triangulating Dopant-Level Mn(II) Insertion in a Cs2NaBiCl6 Double Perovskite Using Magnetic Resonance Spectroscopy

Lead-free metal halide double perovskites are gaining increasing attention for optoelectronic applications. Specifically, doping metal halide double perovskites using transition metals enables broadband tailorability of the optical bandgap for these emerging semiconducting materials. One candidate material is Mn(II)-doped Cs₂NaBiCl₆, but the nature of Mn(II) insertion on chemical structure is poorly understood due to low Mn loading. It is critical to determine the atomic-level structure at the site of Mn(II) incorporation in doped perovskites to better understand the structure-property relationships in these materials and thus to advance their applicability to optoelectronic applications. Magnetic resonance spectroscopy is uniquely qualified to address this, and thus a comprehensive three-pronged strategy, involving solid-state nuclear magnetic resonance (NMR), high-field dynamic nuclear polarization (DNP), and electron paramagnetic resonance (EPR) spectroscopies, is used to identify the location of Mn(II) insertion in Cs₂NaBiCl₆. Multinuclear (²³Na, ³⁵Cl, ¹³³Cs, and ²⁰⁹Bi) one-dimensional (1D) magnetic resonance spectra reveal a low level of Mn(II) incorporation, with select spins affected by paramagnetic relaxation enhancement (PRE) induced by Mn(II) neighbors. EPR measurements confirm the oxidation state, octahedral symmetry, and low doping levels of the Mn(II) centers. Complementary EPR and NMR measurements confirm that the cubic structure is maintained with Mn(II) incorporation at room temperature, but the structure deviates slightly from cubic symmetry at low temperatures (<30 K). HYperfine Sublevel CORrelation (HYSCORE) EPR spectroscopy explores the electron-nuclear correlations of Mn(II) with ²³Na, ¹³³Cs, and ³⁵Cl. The absence of ²⁰⁹Bi correlations suggests that Bi centers are replaced by Mn(II). Endogenous DNP NMR measurements from Mn(II) → ¹³³Cs (<30 K) reveal that the solid effect is the dominant mechanism for DNP transfer and supports that Mn(II) is homogeneously distributed within the double-perovskite structure.

Soft Fiber Electronics Based on Semiconducting Polymer

Fibers, originating from nature and mastered by human, have woven their way throughout the entire history of human civilization. Recent developments in semiconducting polymer materials have further endowed fibers and textiles with various electronic functions, which are attractive in applications such as information interfacing, personalized medicine, and clean energy. Owing to their ability to be easily integrated into daily life, soft fiber electronics based on semiconducting polymers have gained popularity recently for wearable and implantable applications. Herein, we present a review of the previous and current progress in semiconducting polymer-based fiber electronics, particularly focusing on smart-wearable and implantable areas. First, we provide a brief overview of semiconducting polymers from the viewpoint of materials based on the basic concepts and functionality requirements of different devices. Then we analyze the existing applications and associated devices such as information interfaces, healthcare and medicine, and energy conversion and storage. The working principle and performance of semiconducting polymer-based fiber devices are summarized. Furthermore, we focus on the fabrication techniques of fiber devices. Based on the continuous fabrication of one-dimensional fiber and yarn, we introduce two- and three-dimensional fabric fabricating methods. Finally, we review challenges and relevant perspectives and potential solutions to address the related problems.

The rise of halide perovskite semiconductors

Advances in metal-halide perovskite semiconductors have significantly influenced light-current conversion technologies. The excellent structural and compositional tunability of perovskites, coupled with their exceptional quantum yields for photoluminescence, make them a promising candidate for optoelectronic devices.

Nanomembrane-assembled nanophotonics and optoelectronics: from materials to applications

Nanophotonics and optoelectronics are the keys to the information transmission technology field. The performance of the devices crucially depends on the light-matter interaction, and it is found that three-dimensional (3D) structures may be associated with strong light field regulation for advantageous application. Recently, 3D assembly of flexible nanomembranes has attracted increasing attention in optical field, and novel optoelectronic device applications have been demonstrated with fantastic 3D design. In this review, we first introduce the fabrication of various materials in the form of nanomembranes. On the basis of the deformability of nanomembranes, 3D structures can be built by patterning and release steps. Specifically, assembly methods to build 3D nanomembrane are summarized as rolling, folding, buckling and pick-place methods. Incorporating functional materials and constructing fine structures are two important development directions in 3D nanophotonics and optoelectronics, and we settle previous researches on these two aspects. The extraordinary performance and applicability of 3D devices show the potential of nanomembrane assembly for future optoelectronic applications in multiple areas.

Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability

In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆^- octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^-11 A, a responsivity of up to 0.237 A W^-1, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.

Achieving Ultrahigh Efficiency Vacancy-Ordered Double Perovskite Microcrystals via Ionic Liquids

Lead-free perovskites have gained much interest for photovoltaic and optoelectronic applications. But instability and low quantum efficiency significantly limit their prospects for future applications. Here, a general route is reported to synthesize highly stable lead-free perovskites on a large scale with remarkably enhanced quantum efficiency. Two typical vacancy-ordered double perovskites (Cs₂ ZrCl₆ and Cs₂ SnCl₆ ) and their corresponding Bi³⁺ or Sb³⁺ doped samples are synthesized in ionic liquids (ILs) solutions via a simple solution method. These prepared perovskite samples all exhibit high-quality crystalline structures and their photoluminescence quantum yields (PLQYs) all show an increase close to 200% compared to the samples prepared in the hydrochloric acid system. The PLQY of Sb-doped Cs₂ ZrCl₆ with excellent thermal stability can reach up to 90.2%, which is the highest value reported for this system (Cs₂ ZrCl₆ :Sb). Density functional theory calculations reveal that the corresponding interaction between the ILs and the samples can effectively improve the crystal quality and reduce energy loss. The potential applications of the prepared samples for high-performance white light-emitting diodes and optical anti-counterfeiting are also demonstrated. The findings provide a straightforward way to obtain ultrahigh quantum efficiency vacancy-ordered double perovskites with good thermal stability and excellent optoelectronic properties.

Sn-Based Perovskite Halides for Electronic Devices

Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn²⁺ to Sn⁴⁺ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.

Competing Energy Transfer in Two-Dimensional Mn2+-Doped BDACdBr4 Hybrid Layered Perovskites with Near-Unity Photoluminescence Quantum Yield

Two-dimensional (2D) hybrid layered perovskites (HLPs) have attracted extensive attention due to their excellent optoelectronic properties. Herein, we successfully prepared high-quality Mn-doped BDACdBr₄ (BDA = NH₂(CH₂)₄NH₂, butylene diammonium) HLP single crystals (SCs). The incorporation of Mn²⁺ ions modulates the electronic band structure of BDACdBr₄ perovskites and tailors the energy transfer process of excited states. A near-unity photoluminescence (PL) quantum yield of 96% from the Mn²⁺ emission at 608 nm is achieved. Excitation wavelength-dependent spectroscopic characterizations help to clarify the energy transfer mechanism of Mn-doped BDACdBr₄, in which competing PL from the ³E_g → ¹A_1g transition of Cd²⁺ and the ⁴T₁(G) → ⁶A₁(S) transition of Mn²⁺ dopants is observed. Temperature-dependent PL spectroscopic characterizations indicate that the efficient energy transfer from BDACdBr₄ perovskite host to Mn²⁺ dopants requires thermal activation to overcome a potential barrier. This work provides new insight into the photophysics and optical properties of 2D HLPs, especially the influence of Mn²⁺ doping on competing energy transfer in hybrid luminescent materials.

Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model

Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes.

A Review of Performance Prediction Based on Machine Learning in Materials Science

With increasing demand in many areas, materials are constantly evolving. However, they still have numerous practical constraints. The rational design and discovery of new materials can create a huge technological and social impact. However, such rational design and discovery require a holistic, multi-stage design process, including the design of the material composition, material structure, material properties as well as process design and engineering. Such a complex exploration using traditional scientific methods is not only blind but also a huge waste of time and resources. Machine learning (ML), which is used across data to find correlations in material properties and understand the chemical properties of materials, is being considered a new way to explore the materials field. This paper reviews some of the major recent advances and applications of ML in the field of properties prediction of materials and discusses the key challenges and opportunities in this cross-cutting area.

New Lead-free Organic-Inorganic Hybrid Semiconductor Single Crystals for a UV-Vis-NIR Broadband Photodetector

Organic-inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)-halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet-visible-near infrared (UV-vis-NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic-inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV-vis-NIR broadband photodetectors.

Epitaxial Growth of Lead-Free 2D Cs3 Cu2 I5 Perovskites for High-Performance UV Photodetectors

The all-inorganic lead-free Cu-based halide perovskites represented by the Cs-Cu-I system, have sparked extensive interest recently due to their impressive photophysical characteristics. However, successive works on their potential application in light emission diodes and photodetectors rely on tiny polycrystals, in which the grain boundaries and defects may lead to the performance degradation of their embodied devices. Here, 2D all-inorganic perovskite Cs₃ Cu₂ I₅ single crystals are epitaxially grown on mica substrates, with a thickness down to 10 nm. The strong blue emission of the Cs₃ Cu₂ I₅ flakes may originate from the radiative transition of self-trapped excitons associated with a large Stocks shift and long (microsecond) decay time. Ultravioelt (UV) photodetectors based on individual Cs₃ Cu₂ I₅ nanosheets are fabricated via a swift and etching-free dry transfer approach, which reveal a high responsivity of 3.78 A W^-1 (270 nm, 5 V bias), as well as a fast response speed (τ_rise  ≈163 ms, τ_decay  ≈203 ms), outperforming congeneric UV sensors based on other 2D metal halide perovskites. This work therefore sheds light on the fabrication of green optoelectronic devices based on lead-free 2D perovskites, vital for the sustainable development of photoelectric technology.

Low-Temperature Vapor-Phase Anion-Exchange Strategy for Wide-Bandgap Double-Perovskite Cs2AgBiCl6 Films toward Weak Ultraviolet Light Imaging

Low-temperature synthesis of high-quality, high-stability, wide-bandgap perovskite films by solution methods is still challenging. Herein, large-scale wide-bandgap Cs₂AgBiCl₆ (CABC) double perovskite films are synthesized by a vapor-phase anion-exchange strategy. By dedicatedly designing an ultrathin TiO₂ modification layer between the substrate and double perovskites, high-quality heterojunctions with matched energy band alignment are formed, contributing to a remarkably enhanced ON/OFF ratio of 2.4 × 10⁴ (86 times) and a responsivity of 16 mA W^-1 (12 times). Additionally, the ultraviolet photodetectors (UV PDs) exhibit an excellent UV detection limit of 1.18 μW cm^-2 (20 nW), a broad linear dynamic range of 146 dB, and a high specific detectivity of 2.06 × 10¹¹ Jones, as well as long-term stability. Finally, we further demonstrate a weak UV imaging system using CABC UV PDs as imaging sensors. The system is capable of imaging weak UV signals as low as 2.94 μW cm^-2 (50 nW). Our results provide a feasible approach for low-temperature fabrication of wide-bandgap perovskite UV PDs and explore the promising application for weak UV detection and imaging.

Thermochromic Cs2 AgBiBr6 Single Crystal with Decreased Band Gap through Order-Disorder Transition

Lead-free Cs₂ AgBiBr₆ double perovskite is considered to be a promising alternative to the traditional lead-based analogues due to its long carrier lifetime, high structural stability, and non-toxicity. However, the large band gap limits its absorption of visible light, which is not conducive to further optoelectronic applications. Herein, a thermochromic strategy is reported to decrease the band gap of Cs₂ AgBiBr₆ by approximately 0.36 eV, obtaining the smallest reported band gap of 1.69 eV under ambient conditions. The experimental data indicate that after annealing the Cs₂ AgBiBr₆ single crystals at 400 °C, the silver (Ag) and bismuth (Bi) atoms occupy the B-site in a random way and form a partially disordered configuration. The formation of the antisite defects broadens the band edges and decreases the band gap. This work offers new insights into the preparation of narrow band gap lead-free double perovskites, and a deep understanding of their structural and electronic properties for further development in photoelectric devices.

Achieving dual-color imaging by dual-band perovskite photodetectors coupled with algorithms

Dual-color or multispectral imaging based on conventional optical imaging techniques is suffering from the bottleneck of complex manufacturing and time consumption caused by multiple imaging. Herein, we develop a dual-color computational imaging system combining a vertically stacked dual-channel dual-band perovskite photodetectors (PDs) and the advanced Fourier imaging algorithm. Significantly, our imaging system bypasses the complex fabrication process of high-density dual-band PD arrays and is enabled to capture two high-resolution spectral images at the same time. Based on the experiments and simulations, we confirm that the spectral overlap of dual-band PDs will cause detrimental effect for color identification, and optimizing the bandwidth spectrum is beneficial for achieving much better spectral imaging. Moreover, we have further improved the imaging quality by increasing the sampling rate and suppressing current fluctuations. We suggest that these results provide important interesting insights for the development of advanced imaging systems, including IR imaging, THz imaging, multispectral/hyperspectral imaging, etc.

Recent advances in lead-free double perovskites for x-ray and photodetection

Over the last decade, lead halide perovskites have attracted significant research attention in the field of photovoltaics, light-emitting devices, photodetection, ionizing radiation detection, etc, owing to their outstanding optoelectrical properties. However, the commercial applications of lead-based perovskite devices are restricted due to the poor ambient stability and toxicity of lead. The encapsulation of lead-based devices can reduce the possible leakage of lead. However, it is hard to ensure safety during large-scale production and long-term storage. Recently, considerable efforts have been made to design lead-free perovskites for different optoelectronic applications. Metal halide double perovskites with the general formula of A₂M^IM^IIIX₆or A₂M^IVX₆could be potentially considered as green and stable alternatives for different optoelectronic applications. In this review article, we focus on the recent progress and findings on lead-free halide double perovskites for x-ray and UV-vis photodetection applications. Lead-free halide double perovskite has recently drawn a great deal of attention for superior x-ray detection due to its high absorption coefficient, large carrier mobility-lifetime product, and large bulk resistance. In addition, these materials exhibit good performance in photodetection in the UV-vis region due to high photocarrier generation and efficient carrier separation. In this review, first, we define the characteristics of lead-free double perovskite materials. The fundamental characteristics and beneficial properties of halide perovskites for direct and indirect x-ray detection are then discussed. We comprehensively review recent developments and efforts on lead-free double perovskite for x-ray detection and UV-vis photodetection. We bring out the current challenges and opportunities in the field and finally present the future outlook for developing lead-free double perovskite-based x-ray and UV-vis photodetectors for practical applications.

Methylpiperazine based 0D chiral hybrid lead halides for second harmonic generation

Hybrid organic-inorganic metal halides (HOMHs) have recently attracted broad research interest for their structural tunability and remarkable optoelectronic properties. Among them, chiral HOMHs have demonstrated promising applications in second-order nonlinear optics (NLO) on account of their inherent noncentrosymmetric structures. Herein, we synthesized two new chiral HOMHs, (S-/R-2-C₅H₁₄N₂)₂PbI₆, based on S-/R-2-methylpiperazine chiral amines. They feature a band gap close to 2.9 eV with high phase purity as well as environmental and thermal stability. The induction of the chiral optical properties of (S-/R-2-C₅H₁₄N₂)₂PbI₆ by chiral organic cations was verified by circular dichroism (CD) spectroscopy. Moreover, the resulted HOMHs materials demonstrate a strong second harmonic generation response with a large laser damage threshold (∼2.97 mJ cm^-2), showing promising applications in NLO photonic devices.

Chiral Hybrid Copper(I) Halides for High Efficiency Second Harmonic Generation with a Broadband Transparency Window

Chiral hybrid organic-inorganic metal halides (HOMHs) with intrinsic noncentrosymmetry have shown great promise for applications in second-order nonlinear optics (NLO). However, established chiral HOMHs often suffer from their relatively small band gaps, which lead to negative impacts on transparent window and laser-induced damage thresholds (LDT). Here, we have synthesized two chiral HOMHs based on Cu^I halides, namely (R-/S-MBA)CuBr₂ , which feature well-balanced NLO performances with a highly efficient SHG response, outstanding optical transparency, and high LDT. The effective second-order NLO coefficient of (R-MBA)CuBr₂ has been determined to be ≈24.7 pm V^-1 , which is two orders of magnitude higher than that of their Cu^II counterparts. This work shows the promising potential of Cu^I -based chiral HOMHs for nonlinear photonic applications in wide wavelength regions.

A lead-free halide hybrid perovskite (TMHD)BiCl5 for ultraviolet photodetection

Lead halide hybrid perovskites with a wide bandgap (e.g., CH3NH3PbCl3) have gained tremendous attention in the field of ultraviolet (UV) photodetection due to their brilliant optoelectronic activity.

Perovskite photodetectors and their application in artificial photonic synapses

Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.

Controlling Quantum-Well Width Distribution and Crystal Orientation in Two-Dimensional Tin Halide Perovskites via a Strong Interlayer Electrostatic Interaction

Two-dimensional (2D) tin halide perovskites have recently emerged as very promising materials for eco-friendly lead-free photovoltaic devices. However, the fine control of the bulky organic cations orderly embedding into the perovskite structure with a narrow quantum-well width distribution and favorable orientation is rather complicated. In this study, we proposed to introduce the F-substituted phenylethlammonium (PEA) cation (i.e., 4-fluorophenethylammonium FPEA) in 2D tin halide perovskite, which may mitigate phase polydispersity and crystal orientation, thus potentially increasing attainable charge-carrier mobility. A strong interlayer electrostatic attraction between electron-deficient F atoms and its adjacent phenyl rings aligns the crystal structure, working together with the validated dipole interaction. Therefore, the fluorination of organic cation leads to orderly self-assembly of solvated intermediates and promotes vertical crystal orientation. Furthermore, the interlayer electrostatic interaction serves as a supramolecular anchor to stabilize the 2D tin halide perovskite structure. Our work uncovers the effect of interlayer molecular interaction on efficiency and stability, which contributes to the development of stable and efficient low-toxicity perovskite solar cells.