1
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Khan R, Rehman NU, Kalluri S, Elumalai S, Saritha A, Fakhar-E-Alam M, Ikram M, Abdullaev S, Rahman N, Sangaraju S. 2D MoTe 2 memristors for energy-efficient artificial synapses and neuromorphic applications. NANOSCALE 2025. [PMID: 40370074 DOI: 10.1039/d5nr01509j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2025]
Abstract
The potential of two-dimensional (2D) transition metal dichalcogenides (TMDs), especially molybdenum telluride (MoTe2), in sophisticated electrical and low-energy neuromorphic applications, has attracted a lot of interest. The creation, characteristics, and uses of MoTe2-based memristive devices are summarized in this review paper, with an emphasis on their potential as artificial synapses for neuromorphic computing. We thoroughly examine the special properties of MoTe2, such as its remarkable resistance switching response, excellent linearity in synaptic potentiation, and customizable phase states. These characteristics make it possible to implement basic computational functions with minimal energy consumption, including decimal arithmetic operations and the commutative principles of addition and multiplication. In addition to simulating intricate synaptic processes such as long-term potentiation (LTP), long-term depression (LTD), and spike-timing-dependent plasticity (STDP), the article emphasizes the experimental performances of MoTe2 memristors, which include their capacity to execute exact decimal arithmetic operations. The demonstration of centimeter-scale 2D MoTe2 film-based memristor arrays attaining over 90% recognition accuracy in handwritten digit identification tests further demonstrates the devices' great scalability, stability, and incorporation capabilities. Notwithstanding these developments, issues such as poor environmental robustness, phase transition sensitivity, and low thermal stability still exist. The creation of hybrid or composite materials, doping, and structural alteration are some of the methods to get beyond these obstacles that are covered in the paper. The need for scalable, economical synthesis techniques and a better comprehension of the material's mechanical, optical, and electrical properties through modeling and experiments are emphasized.
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Affiliation(s)
- Rajwali Khan
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Naveed Ur Rehman
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Sujith Kalluri
- Department of Electronics and Communication Engineering, School of Engineering and Sciences, SRM University-AP, Amaravati 522240, Andhra Pradesh, India
- SRM-Amara Raja Center for Energy Storage Devices, SRM University-AP, Amaravati 522240, Andhra Pradesh, India
| | - Sundaravadivel Elumalai
- HIDE- Laboratory, Department of Chemistry, Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Appukuttan Saritha
- Department of Chemistry, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam, Kerala, India
| | - Muhammad Fakhar-E-Alam
- Department of Physics, Government College University Faisalabad, Faisalabad 38000, Pakistan
| | - Muhammad Ikram
- Department of Chemistry, Abdul Wali Khan University Mardan, 23200, KP, Pakistan
| | - Sherzod Abdullaev
- Senior Researcher, Faculty of Chemical Engineering, New Uzbekistan University, Tashkent, Uzbekistan
- Senior Researcher, Scientific and Innovation Department, Tashkent State Pedagogical University named after Nizami, Tashkent, Uzbekistan
| | - Nasir Rahman
- Department of Physics, University of Lakki Marwat, Lakki Marwat, 2842, KP, Pakistan
| | - Sambasivam Sangaraju
- National Water and Energy Center, United Arab Emirates University, Al Ain, 15551, United Arab Emirates.
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2
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Liu T, Wang H, Sun C, Yuan Z, Wang X, Wang L, Wang J, Wang S, Zhang Q, Huang L, Wu W, Li L, Meng X. Suppression of Tin Oxidation via Sn→B Bonding Interactions for High-Resolution Lead-Free Perovskite Neuromorphic Imaging Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2502015. [PMID: 40341612 DOI: 10.1002/adma.202502015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2025] [Revised: 05/01/2025] [Indexed: 05/10/2025]
Abstract
Lead-free tin-based perovskites, specifically (4-Cl-PEA)2SnI4, possess significant potential for the development of high-performance, robust neuromorphic imaging sensors, owing to their superior optoelectronic properties and compatibility with conventional complementary metal-oxide-semiconductor fabrication techniques and silicon-based readout circuits. However, the excessive oxidation of Sn2+ remains a significant obstacle, leading to suboptimal synaptic performance and low resolution in the neuromorphic imaging sensors due to increased recombination losses and poor film uniformity. This study first demonstrates that the introduction of novel Sn→B donor-acceptor bonding interactions effectively suppresses Sn2+ oxidation, enhancing uniformity, reducing nonradiative recombination, and improving synaptic plasticity. A vertical optoelectronic synapse demonstrates diverse synaptic behaviors, attributed to hole trapping and detrapping at the device interface. Additionally, the device enables applications in associative learning, neuromorphic computation, letter encoding, and handwritten digit recognition. Ultimately, integration with silicon circuits results in a high-resolution (32 × 32) neuromorphic imaging array, one of the highest reported resolutions for perovskite optoelectronic synapse arrays. The improved uniformity of boric acid-added (4-Cl-PEA)2SnI4 perovskite films significantly reduces photo response non-uniformity, enhances resolution, and improves memory capabilities. This neuromorphic imaging array successfully integrates sensing, storage, and computation, enabling advanced functionalities like letter recognition, memory, and processing, surpassing conventional image sensors.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hao Wang
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Changzu Sun
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Wang
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lixia Wang
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuyang Wang
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinglin Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Weitong Wu
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liang Li
- School of Physical Science and Technology, Suzhou Key Laboratory of Intelligent Photoelectric Perception, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, University of Chinese Academy of Sciences, Beijing, 100049, China
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3
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Liu T, Yuan Z, Wang L, Shan C, Zhang Q, Chen H, Wang H, Wu W, Huang L, Chai Y, Meng X. Chelated tin halide perovskite for near-infrared neuromorphic imaging array enabling object recognition and motion perception. Nat Commun 2025; 16:4261. [PMID: 40335551 PMCID: PMC12059062 DOI: 10.1038/s41467-025-59624-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2024] [Accepted: 04/29/2025] [Indexed: 05/09/2025] Open
Abstract
Neuromorphic imaging arrays integrate sensing, memory, and processing for efficient spatiotemporal fusion, enabling intelligent object and motion recognition in autonomous and surveillance systems. Halide perovskites offer potential for neuromorphic imaging by regulating photogenerated ions and charges, but lead toxicity and limited response range remain key limitations. Here, we present lead-free non-toxic formamidinium tin triiodide perovskites functionalized with bio-friendly quercetin molecules via a multi-site chelate strategy, achieving favorable near-infrared response and optoelectronic properties. Leveraging a non-equilibrium photogenerated carrier strategy, the formamidinium tin triiodide-quercetin based near-infrared optoelectronic synapses exhibit key synaptic features for practical applications, including quasi-linear time-dependent photocurrent generation, prolonged photocurrent decay, high stability, and low energy consumption. Ultimately, a 12 × 12 real-time neuromorphic near-infrared imaging array is constructed on thin-film transistor backplanes, enabling hardware-level spatiotemporal fusion for robust object recognition and motion perception in complex environments for autonomous and surveillance systems.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Cong Shan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Qinglin Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, China
| | - Hao Chen
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Hao Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Weitong Wu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
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Guo F, Yang X, Wang P, Bai X, Kong T, Wang M, Gu Z, Song Y. Advances in Single-Crystal Films: Synergistic Insights from Perovskites and Organic Molecules for High-Performance Optoelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2412101. [PMID: 39989101 DOI: 10.1002/smll.202412101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2024] [Revised: 01/26/2025] [Indexed: 02/25/2025]
Abstract
Semiconductor single-crystal thin films are crucial for the advancement of high-performance optoelectronic devices. Despite significant progress in fabricating perovskite and organic single-crystal films, interdisciplinary insights between these domains remain unexplored. This review aims to bridge this gap by summarizing recent advances in fabrication strategies for perovskite and organic molecular single-crystal films. Five preparation methods-solution-phase epitaxy, solid-phase epitaxy, meniscus-induced crystallization, antisolvent-induced crystallization, and space-confined growth-are analyzed with a focus on their principles, functional properties, and distinct advantages. By comparing these approaches across material systems, this review identifies transferable insights that can drive the development of large-scale, high-quality single-crystal films. Furthermore, the optoelectronic applications of these films are explored, including solar cells, photodetectors, light-emitting devices, and transistors, while addressing challenges such as scalability, defect control, and integration. This work highlights the importance of cross-disciplinary innovation and provides an effective pathway for integrating perovskite and organic molecular processing to advance the next generation of single-crystal film technologies.
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Affiliation(s)
- Fengmin Guo
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Xiaodong Yang
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Pengkun Wang
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Xintao Bai
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Tianle Kong
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Mengxuan Wang
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Zhenkun Gu
- Henan Institute of Advanced Technology, Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450051, China
| | - Yanlin Song
- Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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5
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Xu H, Zou L, An J, Lin S. All-Solution-Processed IGZO Optoelectronic Synaptic Transistor with Dual-Mode Operation toward Artificial Vision Applications. ACS OMEGA 2025; 10:16884-16891. [PMID: 40321527 PMCID: PMC12044511 DOI: 10.1021/acsomega.5c01052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/03/2025] [Revised: 04/04/2025] [Accepted: 04/09/2025] [Indexed: 05/08/2025]
Abstract
Realizing the dual-mode electric and optical synaptic plasticity within one neuromorphic device is impressive for the construction of a compact artificial visual system. Here, we proposed indium gallium zinc oxide (IGZO) photoelectric synaptic transistors utilizing all-solid-state electrolytes (Li-doped ZrO2) as gate dielectric layers. The device was fabricated by using a facile and cost-effective all-solution method. The synaptic transistor exhibited dual-mode electric and optical synaptic plasticity. Meanwhile, the tunable conductance is achieved through electric potentiation and depression processes, demonstrating the potential for realizing neuromorphic computing. Based on this, a simulated convolutional neural network was designed to realize handwriting digit recognition, achieving an accuracy of 96.8%. Additionally, sophisticated neuromorphic applications such as logic operations, Pavlov's classical experiment, and pupillary reflex simulation were successfully realized. Therefore, the designed transistor demonstrates significant potential for future applications in artificial vision.
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Affiliation(s)
| | | | - Junru An
- State Key Laboratory of Marine
Resource Utilization in South China Sea, School of Materials Science
and Engineering, Hainan University, Haikou 570228,P. R. China
| | - Shiwei Lin
- State Key Laboratory of Marine
Resource Utilization in South China Sea, School of Materials Science
and Engineering, Hainan University, Haikou 570228,P. R. China
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Wang Y, Shan W, Li H, Zhong Y, Wustoni S, Uribe J, Chang T, Musteata VE, Castillo TCH, Yue W, Ling H, El-Atab N, Inal S. An optoelectrochemical synapse based on a single-component n-type mixed conductor. Nat Commun 2025; 16:1615. [PMID: 39948373 PMCID: PMC11825661 DOI: 10.1038/s41467-025-56814-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2024] [Accepted: 01/30/2025] [Indexed: 02/16/2025] Open
Abstract
Organic mixed ionic-electronic conductors (OMIECs) are materials that can be used to build bio-inspired electronic devices as they emulate ion-based cellular communication through doping with aqueous ionic charges. The integration of charge photogeneration and electrochemical doping processes in the polymer film enables optoelectronic applications that involve synaptic transistors. However, no OMIEC has yet been implemented to create a miniaturized photoactive platform capable of perceiving and processing multi-spectral visual information. Here, we present a materials and device design concept in which an n-type OMIEC film is incorporated into the micron-scale channel of an electrochemical transistor operating directly in an aqueous electrolyte under ambient conditions. The conjugated polymer channel, consisting of a fluorinated bisistain-lactone-bithiazole acceptor, has a current modulated in response to both electrical and optical stimuli, emulating the multimodal function of the visual nervous system. Our optoelectrochemical synapse achieves multilevel conductance states as well as transduction of visual information covering ultraviolet, visible, and near-infrared regions of the spectrum - a range beyond that of the human visual system's perception. The resulting transistor active-matrix array is capable of adaptive sensing, memory, and pre-processing of visual information, demonstrating an efficient optoelectronic neuromorphic system with multi-task learning capability.
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Affiliation(s)
- Yazhou Wang
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Wentao Shan
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hanrui Li
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Zhong
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Shofarul Wustoni
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Johana Uribe
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianrui Chang
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Valentina E Musteata
- Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tania Cecilia Hidalgo Castillo
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Wan Yue
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, China
| | - Haifeng Ling
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Nazek El-Atab
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Sahika Inal
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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7
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Dong XM, Chen C, Li YX, Sun HC, Liu B, Li ZF, Wang KL, He ZX, Yu MN, Huang W, Liu JQ. Molecular Cocrystal Strategy for Retinamorphic Vision with UV-Vis-NIR Perception and Fast Recognition. ACS NANO 2025; 19:5718-5726. [PMID: 39885738 DOI: 10.1021/acsnano.4c16251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2025]
Abstract
Neuromorphic vision sensors capable of multispectral perception and efficient recognition are highly desirable for bioretina emulation, but their realization is challenging. Here, we present a cocrystal strategy for preparing an organic nanowire retinamorphic vision sensor with UV-vis-NIR perception and fast recognition. By leveraging molecular-scale donor-acceptor interpenetration and charge-transfer interfaces, the cocrystal nanowire device exhibits ultrawide photoperception ranging from 350 to 1050 nm, fast photoresponse of 150 ms, high specific detectivity of 8.2 × 1012 Jones, and responsivity of 15 A W-1, as well as retina-like photosynaptic plasticity behaviors. Utilizing the sensor nerve and convolutional neural network, the architecture achieves 90% accuracy in recognizing colorful images. The cocrystal design offers an effective method for constructing nanowire photosynases with high performance in artificial visual systems.
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Affiliation(s)
- Xue-Mei Dong
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chen Chen
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yin-Xiang Li
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hong-Chao Sun
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Bin Liu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zi-Fan Li
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Kai-Li Wang
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zi-Xi He
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Meng-Na Yu
- Centre for Molecular Systems and Organic Devices (CMSOD), State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Wei Huang
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Ju-Qing Liu
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
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8
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Shao H, Wang W, Zhang Y, Gao B, Jiang C, Li Y, Xie P, Yan Y, Shen Y, Wu Z, Wang R, Ji Y, Ling H, Huang W, Ho JC. Adaptive In-Sensor Computing for Enhanced Feature Perception and Broadband Image Restoration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2414261. [PMID: 39659128 DOI: 10.1002/adma.202414261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2024] [Revised: 11/22/2024] [Indexed: 12/12/2024]
Abstract
Traditional imaging systems struggle in weak or complex lighting environments due to their fixed spectral responses, resulting in spectral mismatches and degraded image quality. To address these challenges, a bioinspired adaptive broadband image sensor is developed. This innovative sensor leverages a meticulously designed type-I heterojunction alignment of 0D perovskite quantum dots (PQDs) and 2D black phosphorus (BP). This configuration enables efficient carrier injection control and advanced computing capabilities within an integrated phototransistor array. The sensor's unique responses to both visible and infrared (IR) light facilitate selective enhancement and precise feature extraction under varying lighting conditions. Furthermore, it supports real-time convolution and image restoration within a convolutional autoencoder (CAE) network, effectively countering image degradation by capturing spectral features. Remarkably, the hardware responsivity weights perform comparably to software-trained weights, achieving an image restoration accuracy of over 85%. This approach offers a robust and versatile solution for machine vision applications that demand precise and adaptive imaging in dynamic lighting environments.
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Affiliation(s)
- He Shao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Boxiang Gao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chunsheng Jiang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yezhan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yan Yan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yi Shen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zenghui Wu
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Ruiheng Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yu Ji
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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9
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Xu Y, He Y, Shan D, Zeng B, Ni QX. Emerging Artificial Synaptic Devices Based on Organic Semiconductors: Molecular Design, Structure and Applications. ACS APPLIED MATERIALS & INTERFACES 2025; 17:4290-4315. [PMID: 39785981 DOI: 10.1021/acsami.4c17455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2025]
Abstract
In modern computing, the Von Neumann architecture faces challenges such as the memory bottleneck, hindering efficient processing of large datasets and concurrent programs. Neuromorphic computing, inspired by the brain's architecture, emerges as a promising alternative, offering unparalleled computational power while consuming less energy. Artificial synaptic devices play a crucial role in this paradigm shift. Various material systems, from organic to inorganic, have been explored for neuromorphic devices, with organic materials attracting attention for their excellent photoelectric properties, diverse material choices, and versatile preparation methods. Organic semiconductors, in particular, offer advantages over transition-metal dichalcogenides, including ease of preparation and flexibility, making them suitable for large-area organic films. This review focuses on emerging artificial synaptic devices based on organic semiconductors, discussing different branches within the organic semiconductor material system, various fabrication methods, device structure designs, and applications of organic artificial synapse. Critical considerations and challenges for achieving truly human-like dynamic perception in artificial systems based on organic semiconductors are also outlined, reflecting the ongoing evolution of neuromorphic computing.
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Affiliation(s)
- Yunchao Xu
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
| | - Yuan He
- China Center for Special Economic Zone Research, Shenzhen University, Shenzhen 518055, People's Republic of China
- College of Management, Shenzhen University, Shenzhen 518055, People's Republic of China
| | - Dongyong Shan
- Department of Oncology, The Second Xiangya Hospital of Central South University, Changsha 410013, Hunan, People's Republic of China
| | - Biao Zeng
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
| | - Qian-Xi Ni
- The Affiliated Cancer Hospital of Xiangya School of Medicine, Central South University/Hunan Cancer Hospital, Changsha 410013, Hunan, People's Republic of China
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10
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Kim H, Lee K, Zan G, Shin E, Kim W, Zhao K, Jang G, Moon J, Park C. Chiroptical Synaptic Perovskite Memristor as Reconfigurable Physical Unclonable Functions. ACS NANO 2025; 19:691-703. [PMID: 39705594 DOI: 10.1021/acsnano.4c11753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2024]
Abstract
Physical unclonable functions (PUFs), often referred to as digital fingerprints, are emerging as critical elements in enhancing hardware security and encryption. While significant progress has been made in developing optical and memory-based PUFs, integrating reconfigurability with sensitivity to circularly polarized light (CPL) remains largely unexplored. Here, we present a chiroptical synaptic memristor (CSM) as a reconfigurable PUF, leveraging a two-dimensional organic-inorganic halide chiral perovskite. The device combines CPL sensitivity with photoresponsive electrical behavior, enabling its application in optoneuromorphic systems, as demonstrated by its ability to perform image categorization tasks within neuromorphic computing. Furthermore, by leveraging a 10 × 10 crossbar array of the CSMs, we develop a PUF capable of generating reconfigurable cryptographic keys based on the combination of neuromorphic potentiation and polarized light conditions. This work demonstrates an integrated approach to optoneuromorphic functionality, data storage, and encryption, providing an alternative approach for reconfigurable memristor-based PUFs.
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Affiliation(s)
- HoYeon Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Kyuho Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Guangtao Zan
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - EunAe Shin
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
- Korea Packaging Center, Korea Institute of Industrial Technology, Bucheon 14449, Republic of Korea
| | - Woojoong Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Kaiying Zhao
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Gyumin Jang
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jooho Moon
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
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11
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Xie J, Shan X, Zou N, Lin Y, Wang Z, Tao Y, Zhao X, Xu H, Liu Y. All-Optically Controlled Memristive Device Based on Cu 2O/TiO 2 Heterostructure Toward Neuromorphic Visual System. RESEARCH (WASHINGTON, D.C.) 2025; 8:0580. [PMID: 39801505 PMCID: PMC11717997 DOI: 10.34133/research.0580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2024] [Revised: 12/14/2024] [Accepted: 12/21/2024] [Indexed: 01/16/2025]
Abstract
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as the leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. As a p-type oxide material, Cu2O exhibits outstanding theoretical photoelectric conversion efficiency and broadband photoresponse. In this work, an all-optically controlled memristor based on the Cu2O/TiO2/sodium alginate nanocomposite film is developed. Optical potentiation and depression behaviors have been implemented by utilizing visible (680 nm) and ultraviolet (350 nm) light. Furthermore, a 7 × 9 optoelectronic memristive array with satisfactory device variation and environment stability is constructed to emulate the image preprocessing function in biological retina. The random noise can be reduced effectively by utilizing bidirectional optical input. Beneficial from the image preprocessing function, the accuracy of handwritten digit classification increases more than 60%. Our work presents a pathway toward high-efficient neuromorphic visual system and promotes the development of artificial intelligence technology.
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Affiliation(s)
- Jun Xie
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ningbo Zou
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Ministry of Education), College of Physics,
Northeast Normal University, Changchun, China
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12
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Wang Y, Huang W, Li J, Liu S, Fu J, Wang L, Wang H, Li W, Xie L, Ling H, Huang W. Engineering Steep Subthreshold Swings in High-Performance Organic Field-Effect Transistor Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2406522. [PMID: 39479740 DOI: 10.1002/smll.202406522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2024] [Revised: 10/18/2024] [Indexed: 01/11/2025]
Abstract
Organic field-effect transistor (OFET)-based sensors have gained considerable attention for information perception and processing in developing artificial intelligent systems owing to their amplification function and multiterminal regulation. Over the last few decades, extensive research has been conducted on developing OFETs with steep subthreshold swings (SS) to achieve high-performance sensing. In this review, based on an analysis of the critical factors that are unfavorable for a steep SS in OFETs, the corresponding representative strategies for achieving steep SS are summarized, and the advantages and limitations of these strategies are comprehensively discussed. Furthermore, a bridge between SS and OFET sensor performance is established. Subsequently, the applications of OFETs with steep SS in sensor systems, including pressure sensors, photosensors, biochemical sensors, and electrophysiological signal sensors. Lastly, the challenges faced in developing OFET sensors with steep SS are discussed. This study provides insights into the design and application of high-performance OFET sensor systems.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wanxin Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jiahao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haotian Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
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13
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Guo H, Guo J, Wang Y, Wang H, Cheng S, Wang Z, Miao Q, Xu X. An Organic Optoelectronic Synapse with Multilevel Memory Enabled by Gate Modulation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:66948-66960. [PMID: 38573883 DOI: 10.1021/acsami.3c19624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Artificial synaptic devices are emerging as contenders for next-generation computing systems due to their combined advantages of self-adaptive learning mechanisms, high parallel computation capabilities, adjustable memory level, and energy efficiency. Optoelectronic devices are particularly notable for their responsiveness to both voltage inputs and light exposure, making them attractive for dynamic modulation. However, engineering devices with reconfigurable synaptic plasticity and multilevel memory within a singular configuration present a fundamental challenge. Here, we have established an organic transistor-based synaptic device that exhibits both volatile and nonvolatile memory characteristics, modulated through gate voltage together with light stimuli. Our device demonstrates a range of synaptic behaviors, including both short/long-term plasticity (STP and LTP) as well as STP-LTP transitions. Further, as an encoding unit, it delivers exceptional read current levels, achieving a program/erase current ratio exceeding 105, with excellent repeatability. Additionally, a prototype 4 × 4 matrix demonstrates potential in practical neuromorphic systems, showing capabilities in the perception, processing, and memory retention of image inputs.
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Affiliation(s)
- Haotian Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Jing Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yujing Wang
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Hezhen Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Simin Cheng
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Zehao Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Qian Miao
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Xiaomin Xu
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
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14
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Kim HT, Choi DH, Kim MS, Lee S, Kang BH, Kim HJ. Visible-Light-Stimulated Optoelectronic Neuromorphic Transistor Based on Indium-Gallium-Zinc Oxide via Bi 2Te 3 Light Absorption Layer. ACS APPLIED MATERIALS & INTERFACES 2024; 16:67934-67943. [PMID: 39622051 DOI: 10.1021/acsami.4c14088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2024]
Abstract
To emulate a visual perception system, a bismuth telluride (Bi2Te3)/indium-gallium-zinc oxide (IGZO) heterostructure is introduced for optoelectronic neuromorphic transistors (ONTs). Amorphous IGZO is applied as a channel layer to exhibit low off-current, high mobility, and persistent photoconductivity, enabling light-stimulated neuromorphic characteristics. The atomic ratio of In/Ga/Zn was 9.4:9.8:5.2. For a light absorption layer, Bi2Te3 is applied due to a small bandgap, high photoresponse, and carrier concentration. However, conventional optoelectronic devices using Bi2Te3 exhibit insufficient performance owing to their excessive conductivity. To resolve the constraint, the oxidation of Bi2Te3 is performed to suppress its electrical conductivity. Finally, the IGZO ONT with a Bi2Te3 layer exhibits optoelectronic characteristics under visible-light irradiation. Under red-light irradiation having a light intensity of 5 mW mm-2, it exhibits enhanced optoelectronic characteristics including photoresponsivity, photosensitivity, and detectivity from 19.6 to 3.46 × 102 A/W, 4.95 to 1.46 × 108, and 1.45 × 107 to 2.13 × 1012 Jones compared to that without a Bi2Te3 layer, respectively. To confirm reproducibility and uniformity, we fabricated and compared the optoelectronic characteristics of 5 samples from batch to batch. Regarding optoelectronic neuromorphic characteristics, the ONT exhibits short- and long-term memory and a highly linear relationship between peak synaptic current and pulse number under red-light pulses. The paired-pulse facilitation index was 208%. To confirm the applicability of artificial visual perception, a 6 × 6 ONT array demonstrates long-term memory characteristic successfully after red-light irradiation with a Y-shaped pattern. In view of stability and reliability, we conducted three potentiation processes and compared the peak synaptic currents of each potentiation process.
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Affiliation(s)
- Hyung Tae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Dong Hyun Choi
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Min Seong Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Sujin Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
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15
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Zhu Y, Nyberg T, Nyholm L, Primetzhofer D, Shi X, Zhang Z. Wafer-Scale Ag 2S-Based Memristive Crossbar Arrays with Ultra-Low Switching-Energies Reaching Biological Synapses. NANO-MICRO LETTERS 2024; 17:69. [PMID: 39572441 PMCID: PMC11582288 DOI: 10.1007/s40820-024-01559-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Accepted: 10/08/2024] [Indexed: 11/24/2024]
Abstract
Memristive crossbar arrays (MCAs) offer parallel data storage and processing for energy-efficient neuromorphic computing. However, most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor (CMOS) technology still suffer from substantially larger energy consumption than biological synapses, due to the slow kinetics of forming conductive paths inside the memristive units. Here we report wafer-scale Ag2S-based MCAs realized using CMOS-compatible processes at temperatures below 160 °C. Ag2S electrolytes supply highly mobile Ag+ ions, and provide the Ag/Ag2S interface with low silver nucleation barrier to form silver filaments at low energy costs. By further enhancing Ag+ migration in Ag2S electrolytes via microstructure modulation, the integrated memristors exhibit a record low threshold of approximately - 0.1 V, and demonstrate ultra-low switching-energies reaching femtojoule values as observed in biological synapses. The low-temperature process also enables MCA integration on polyimide substrates for applications in flexible electronics. Moreover, the intrinsic nonidealities of the memristive units for deep learning can be compensated by employing an advanced training algorithm. An impressive accuracy of 92.6% in image recognition simulations is demonstrated with the MCAs after the compensation. The demonstrated MCAs provide a promising device option for neuromorphic computing with ultra-high energy-efficiency.
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Affiliation(s)
- Yuan Zhu
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, 75121, Uppsala, Sweden
| | - Tomas Nyberg
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, 75121, Uppsala, Sweden
| | - Leif Nyholm
- Department of Chemistry, Uppsala University, Uppsala, Sweden
| | | | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People's Republic of China
| | - Zhen Zhang
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, 75121, Uppsala, Sweden.
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16
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Wang X, Zhang L, Zhao Y, Qin Z, Hu B, Zhang L, Jiang Y, Wang Q, Liang Z, Tang X, Wu J, Cao F, Bu L, Lei B, Lu G. Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406977. [PMID: 39223900 DOI: 10.1002/adma.202406977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/24/2024] [Indexed: 09/04/2024]
Abstract
The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200 °C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.
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Affiliation(s)
- Xin Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Liuyang Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yi Zhao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zongze Qin
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bin Hu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Long Zhang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Yihang Jiang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Qingyu Wang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Zechen Liang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Xian Tang
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Jingpeng Wu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Fan Cao
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Laju Bu
- School of Chemistry, Xi'an Jiaotong University, Xi'an, 712046, China
| | - Bo Lei
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
- Department of Respiratory and Critical Care Medicine, The Second Affiliated Hospital of Xi'an Jiaotong University, Xi'an, 710004, China
| | - Guanghao Lu
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 712046, China
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17
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Li C, Chen C. Single-Crystal Perovskite for Solar Cell Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402759. [PMID: 39301993 DOI: 10.1002/smll.202402759] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Revised: 08/21/2024] [Indexed: 09/22/2024]
Abstract
The advent of organic-inorganic hybrid metal halide perovskites has revolutionized photovoltaics, with polycrystalline thin films reaching over 26% efficiency and single-crystal perovskite solar cells (IC-PSCs) demonstrating ≈24%. However, research on single-crystal perovskites remains limited, leaving a crucial gap in optimizing solar energy conversion. Unlike polycrystalline films, which suffer from high defect densities and instability, single-crystal perovskites offer minimal defects, extended carrier lifetimes, and longer diffusion lengths, making them ideal for high-performance optoelectronics and essential for understanding perovskite material behavior. This review explores the advancements and potential of IC-PSCs, focusing on their superior efficiency, stability, and role in overcoming the limitations of polycrystalline counterparts. It covers device architecture, material composition, preparation methodologies, and recent breakthroughs, emphasizing the importance of further research to propel IC-PSCs toward commercial viability and future dominance in photovoltaic technology.
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Affiliation(s)
- Chao Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Materials Science and Engineering, Hebei University of Technology, No. 5340, Xiping Road, Beichen, Tianjin, 300401, China
| | - Cong Chen
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Materials Science and Engineering, Hebei University of Technology, No. 5340, Xiping Road, Beichen, Tianjin, 300401, China
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18
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Leng Y, Lv Z, Huang S, Xie P, Li H, Zhu S, Sun T, Zhou Y, Zhai Y, Li Q, Ding G, Zhou Y, Han S. A Near-Infrared Retinomorphic Device with High Dimensionality Reservoir Expression. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2411225. [PMID: 39390822 PMCID: PMC11602693 DOI: 10.1002/adma.202411225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Revised: 09/24/2024] [Indexed: 10/12/2024]
Abstract
Physical reservoir-based reservoir computing (RC) systems for intelligent perception have recently gained attention because they require fewer computing resources. However, the system remains limited in infrared (IR) machine vision, including materials and physical reservoir expression power. Inspired by biological visual perception systems, the study proposes a near-infrared (NIR) retinomorphic device that simultaneously perceives and encodes narrow IR spectral information (at ≈980 nm). The proposed device, featuring core-shell upconversion nanoparticle/poly (3-hexylthiophene) (P3HT) nanocomposite channels, enables the absorption and conversion of NIR into high-energy photons to excite more photo carriers in P3HT. The photon-electron-coupled dynamics under the synergy of photovoltaic and photogating effects influence the nonlinearity and high dimensionality of the RC system under narrow-band NIR irradiation. The device also exhibits multilevel data storage capability (≥8 levels), excellent stability (≥2000 s), and durability (≥100 cycles). The system accurately identifies NIR static and dynamic handwritten digit images, achieving recognition accuracies of 91.13% and 90.07%, respectively. Thus, the device tackles intricate computations like solving second-order nonlinear dynamic equations with minimal errors (normalized mean squared error of 1.06 × 10⁻3 during prediction).
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Affiliation(s)
- Yan‐Bing Leng
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
| | - Ziyu Lv
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Shengming Huang
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Peng Xie
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Hua‐Xin Li
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Shirui Zhu
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
| | - Tao Sun
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - You Zhou
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Qingxiu Li
- Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060P. R. China
| | - Guanglong Ding
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Su‐Ting Han
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityKowloonHong Kong999077P. R. China
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19
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Choi C, Lee GJ, Chang S, Song YM, Kim DH. Inspiration from Visual Ecology for Advancing Multifunctional Robotic Vision Systems: Bio-inspired Electronic Eyes and Neuromorphic Image Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2412252. [PMID: 39402806 DOI: 10.1002/adma.202412252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2024] [Revised: 09/18/2024] [Indexed: 11/29/2024]
Abstract
In robotics, particularly for autonomous navigation and human-robot collaboration, the significance of unconventional imaging techniques and efficient data processing capabilities is paramount. The unstructured environments encountered by robots, coupled with complex missions assigned to them, present numerous challenges necessitating diverse visual functionalities, and consequently, the development of multifunctional robotic vision systems has become indispensable. Meanwhile, rich diversity inherent in animal vision systems, honed over evolutionary epochs to meet their survival demands across varied habitats, serves as a profound source of inspirations. Here, recent advancements in multifunctional robotic vision systems drawing inspiration from natural ocular structures and their visual perception mechanisms are delineated. First, unique imaging functionalities of natural eyes across terrestrial, aerial, and aquatic habitats and visual signal processing mechanism of humans are explored. Then, designs and functionalities of bio-inspired electronic eyes are explored, engineered to mimic key components and underlying optical principles of natural eyes. Furthermore, neuromorphic image sensors are discussed, emulating functional properties of synapses, neurons, and retinas and thereby enhancing accuracy and efficiency of robotic vision tasks. Next, integration examples of electronic eyes with mobile robotic/biological systems are introduced. Finally, a forward-looking outlook on the development of bio-inspired electronic eyes and neuromorphic image sensors is provided.
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Affiliation(s)
- Changsoon Choi
- Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - Gil Ju Lee
- School of Electrical and Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
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20
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Yan C, Wang Q, Gong W, Lu J, Yin Y, Xiang C, Xue D, Wang Z, Huang L, Chi L. Enhancing the performance of organic phototransistors using a sandwich-heterostructure. Chem Commun (Camb) 2024; 60:10132-10135. [PMID: 39189054 DOI: 10.1039/d4cc03227f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
To weaken the adverse effects of traditional planar heterojunctions on phototransistors, an effective strategy for achieving low dark-current and high photoresponsive organic phototransistors via constructing a sandwich heterostructure is demonstrated. This work offers a new route for the design and development of high-performance phototransistor devices.
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Affiliation(s)
- Chi Yan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Qi Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Weijie Gong
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Jie Lu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Yao Yin
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Chuan Xiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Di Xue
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Zi Wang
- Suzhou Laboratory, Suzhou 215123, China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China.
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21
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Zhao W, Lin Z, Chen H, Xu S, Chen E, Guo T, Ye Y, Chen H. Perovskite-Doped Modulated Color-Selective Photosynaptic Transistors for Target Object Recognition. NANO LETTERS 2024; 24:9937-9945. [PMID: 39092599 DOI: 10.1021/acs.nanolett.4c02447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2024]
Abstract
The processing of multicolor noisy images in visual neuromorphic devices requires selective absorption at specific wavelengths; however, it is difficult to achieve this because the spectral absorption range of the device is affected by the type of material. Surprisingly, the absorption range of perovskite materials can be adjusted by doping. Herein, a CdCl2 co-doped CsPbBr3 nanocrystal-based photosensitive synaptic transistor (PST) is reported. By decreasing the doping concentration, the response of the PST to short-wavelength light is gradually enhanced, and even weak light of 40 μW·cm-2 can be detected. Benefiting from the excellent color selectivity of the PST device, the device array is applied to feature extraction of target blue items and removal of red and green noise, which results in the recognition accuracy of 95% for the noisy MNIST data set. This work provides new ideas for the application of novel transistors integrating sensors and storage computing.
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Affiliation(s)
- Wenxiao Zhao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Zexi Lin
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Hao Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Sheng Xu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Enguo Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Yun Ye
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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22
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Duan S, Zhang X, Xi Y, Liu D, Zhang X, Li C, Jiang L, Li L, Chen H, Ren X, Hu W. Solution-Processed Ultralow Voltage Organic Transistors With Sharp Switching for Adaptive Visual Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405030. [PMID: 38808576 DOI: 10.1002/adma.202405030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/26/2024] [Indexed: 05/30/2024]
Abstract
Neuromorphic visual systems can emulate biological retinal systems to perceive visual information under different levels of illumination, making them have considerable potential for future intelligent vehicles and vision automation. However, the complex circuits and high operating voltages of conventional artificial vision systems present great challenges for device integration and power consumption. Here, bioinspired synaptic transistors based on organic single crystal phototransistors are reported, which exhibit excitation and inhibition synaptic plasticity with time-varying. By manipulating the charge dynamics of the trapping centers of organic crystal-electret vertical stacks, organic transistors can operate below 1 V with record high on/off ratios close to 108 and sharp switching with a subthreshold swing of 59.8 mV dec-1. Moreover, the approach offers visual adaptation with highly localized modulation and over 98.2% recognition accuracy under different illumination levels. These bioinspired visual adaptation transistors offer great potential for simplifying the circuitry of artificial vision systems and will contribute to the development of machine vision applications.
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Affiliation(s)
- Shuming Duan
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Xianghong Zhang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Yue Xi
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Di Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaotao Zhang
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Liqiang Li
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
| | - Xiaochen Ren
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
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23
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Sui N, Ji Y, Li M, Zheng F, Shao S, Li J, Liu Z, Wu J, Zhao J, Li L. Photoprogrammed Multifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer-Sorted Semiconducting Single-Walled Carbon Nanotubes for Image Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401794. [PMID: 38828719 PMCID: PMC11304235 DOI: 10.1002/advs.202401794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/12/2024] [Indexed: 06/05/2024]
Abstract
The development of neuromorphic optoelectronic systems opens up the possibility of the next generation of artificial vision. In this work, the novel broadband (from 365 to 940 nm) and multilevel storage optoelectronic synaptic thin-film transistor (TFT) arrays are reported using the photosensitive conjugated polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)], F8T2) sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) as channel materials. The broadband synaptic responses are inherited to absorption from both photosensitive F8T2 and sorted sc-SWCNTs, and the excellent optoelectronic synaptic behaviors with 200 linearly increasing conductance states and long retention time > 103 s are attributed to the superior charge trapping at the AlOx dielectric layer grown by atomic layer deposition. Furthermore, the synaptic TFTs can achieve IOn/IOff ratios up to 106 and optoelectronic synaptic plasticity with the low power consumption (59 aJ per single pulse), which can simulate not only basic biological synaptic functions but also optical write and electrical erase, multilevel storage, and image recognition. Further, a novel Spiking Neural Network algorithm based on hardware characteristics is designed for the recognition task of Caltech 101 dataset and multiple features of the images are successfully extracted with higher accuracy (97.92%) of the recognition task from the multi-frequency curves of the optoelectronic synaptic devices.
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Affiliation(s)
- Nianzi Sui
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Yixi Ji
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Min Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Fanyuan Zheng
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
| | - Shuangshuang Shao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Jiaqi Li
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Zhaoxin Liu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jinjian Wu
- School of Artificial IntelligenceXidian UniversityXi'an710071P. R. China
| | - Jianwen Zhao
- School of Nano‐Tech and Nano‐BionicsUniversity of Science and Technology of ChinaNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
- Division of Nanodevices and Related NanomaterialsSuzhou Institute of Nano‐Tech and Nano‐BionicsChinese Academy of SciencesNo. 398 Ruoshui Road, Suzhou Industrial ParkSuzhouJiangsu Province215123P. R. China
| | - Lain‐Jong Li
- Department of Mechanical EngineeringThe University of Hong KongPokfulam RoadHong Kong999077P. R. China
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24
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Wang Y, Nie S, Liu S, Hu Y, Fu J, Ming J, Liu J, Li Y, He X, Wang L, Li W, Yi M, Ling H, Xie L, Huang W. Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404160. [PMID: 38815276 DOI: 10.1002/adma.202404160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shimiao Nie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yunfei Hu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yueqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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25
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Lei Y, Zhang Y, Huo J, Ding F, Yan Y, Shen Y, Li X, Kang W, Yan Z. Stability Strategies and Applications of Iodide Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311880. [PMID: 38366127 DOI: 10.1002/smll.202311880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/03/2024] [Indexed: 02/18/2024]
Abstract
Iodide perovskites have demonstrated their unprecedented high efficiency and commercialization potential, and their superior optoelectronic properties, such as high absorption coefficient, high carrier mobility, and narrow direct bandgap, have attracted much attention, especially in solar cells, photodetectors, and light-emitting diodes (LEDs). However, whether it is organic iodide perovskite, organic-inorganic hybrid iodide perovskite or all-inorganic iodide perovskite the stability of these iodide perovskites is still poor and the contamination is high. In recent years, scholars have studied more iodide perovskites to improve their stability as well as optoelectronic properties from various angles. This paper systematically reviews the strategies (component engineering, additive engineering, dimensionality reduction engineering, and phase mixing engineering) used to improve the stability of iodide perovskites and their applications in recent years.
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Affiliation(s)
- Yuchen Lei
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Yaofang Zhang
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Jiale Huo
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Fei Ding
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Yu Yan
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Yan Shen
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Xiang Li
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Physical Science and Technology, Tiangong University, Tianjin, 300387, P. R. China
| | - Weimin Kang
- State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, Tianjin, 300387, P. R. China
- School of Textile Science and Engineering, Tiangong University, Tianjin, 300387, P. R. China
| | - Zirui Yan
- Tianjin Lishen Chaodian Technology Co., Ltd., Tianjin, 300392, P. R. China
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26
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Guo L, Sun H, Min L, Wang M, Cao F, Li L. Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402253. [PMID: 38553842 DOI: 10.1002/adma.202402253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/16/2024] [Indexed: 04/09/2024]
Abstract
Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.
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Affiliation(s)
- Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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27
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Sun S, Zhang M, Bian J, Xu T, Su J. In 2O 3/ZnO heterojunction thin film transistor for high recognition accuracy neuromorphic computing and optoelectronic artificial synapses. NANOTECHNOLOGY 2024; 35:365602. [PMID: 38861958 DOI: 10.1088/1361-6528/ad5685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Accepted: 06/11/2024] [Indexed: 06/13/2024]
Abstract
Solid electrolyte-gated transistors exhibit improved chemical stability and can fulfill the requirements of microelectronic packaging. Typically, metal oxide semiconductors are employed as channel materials. However, the extrinsic electron transport properties of these oxides, which are often prone to defects, pose limitations on the overall electrical performance. Achieving excellent repeatability and stability of transistors through the solution process remains a challenging task. In this study, we propose the utilization of a solution-based method to fabricate an In2O3/ZnO heterojunction structure, enabling the development of efficient multifunctional optoelectronic devices. The heterojunction's upper and lower interfaces induce energy band bending, resulting in the accumulation of a large number of electrons and a significant enhancement in transistor mobility. To mimic synaptic plasticity responses to electrical and optical stimuli, we utilize Li+-doped high-k ZrOxthin films as a solid electrolyte in the device. Notably, the heterojunction transistor-based convolutional neural network achieves a high accuracy rate of 93% in recognizing handwritten digits. Moreover, our research involves the simulation of a typical sensory neuron, specifically a nociceptor, within our synaptic transistor. This research offers a novel avenue for the advancement of cost-effective three-terminal thin-film transistors tailored for neuromorphic applications.
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Affiliation(s)
- Shangheng Sun
- School of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China
| | - Minghao Zhang
- School of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China
| | - Jing Bian
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China
| | - Ting Xu
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China
| | - Jie Su
- School of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China
- School of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China
- National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing 210093, People's Republic of China
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Pan G, Li M, Yu X, Zhou Y, Xu M, Yang X, Xu Z, Li Q, Feng H. Spectrally Tunable Lead-Free Perovskite Rb 2ZrCl 6:Te for Information Encryption and X-ray Imaging. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2530. [PMID: 38893794 PMCID: PMC11173108 DOI: 10.3390/ma17112530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2024] [Revised: 05/19/2024] [Accepted: 05/22/2024] [Indexed: 06/21/2024]
Abstract
A series of lead-free Rb2ZrCl6:xTe4+ (x = 0%, 0.1%, 0.5%, 1.0%, 2.0%, 3.0%, 5.0%, 10.0%) perovskite materials were synthesized through a hydrothermal method in this work. The substitution of Te4+ for Zr in Rb2ZrCl6 was investigated to examine the effect of Te4+ doping on the spectral properties of Rb2ZrCl6 and its potential applications. The incorporation of Te4+ induced yellow emission of triplet self-trapped emission (STE). Different luminescence wavelengths were regulated by Te4+ concentration and excitation wavelength, and under a low concentration of Te4+ doping (x ≤ 0.1%), different types of host STE emission and Te4+ triplet state emission could be achieved through various excitation energies. These luminescent properties made it suitable for applications in information encryption. When Te4+ was doped at high concentrations (x ≥ 1%), yellow triplet state emission of Te4+ predominated, resulting in intense yellow emission, which stemmed from strong exciton binding energy and intense electron-phonon coupling. In addition, a Rb2ZrCl6:2%Te4+@RTV scintillating film was fabricated and a spatial resolution of 3.7 lp/mm was achieved, demonstrating the potential applications of Rb2ZrCl6:xTe4+ in nondestructive detection and bioimaging.
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Affiliation(s)
| | | | | | | | | | | | | | - Qianli Li
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China; (G.P.); (M.L.); (X.Y.); (Y.Z.); (M.X.); (X.Y.); (Z.X.)
| | - He Feng
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China; (G.P.); (M.L.); (X.Y.); (Y.Z.); (M.X.); (X.Y.); (Z.X.)
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29
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Bag A, Ghosh G, Sultan MJ, Chouhdry HH, Hong SJ, Trung TQ, Kang GY, Lee NE. Bio-Inspired Sensory Receptors for Artificial-Intelligence Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403150. [PMID: 38699932 DOI: 10.1002/adma.202403150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/16/2024] [Indexed: 05/05/2024]
Abstract
In the era of artificial intelligence (AI), there is a growing interest in replicating human sensory perception. Selective and sensitive bio-inspired sensory receptors with synaptic plasticity have recently gained significant attention in developing energy-efficient AI perception. Various bio-inspired sensory receptors and their applications in AI perception are reviewed here. The critical challenges for the future development of bio-inspired sensory receptors are outlined, emphasizing the need for innovative solutions to overcome hurdles in sensor design, integration, and scalability. AI perception can revolutionize various fields, including human-machine interaction, autonomous systems, medical diagnostics, environmental monitoring, industrial optimization, and assistive technologies. As advancements in bio-inspired sensing continue to accelerate, the promise of creating more intelligent and adaptive AI systems becomes increasingly attainable, marking a significant step forward in the evolution of human-like sensory perception.
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Affiliation(s)
- Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Gargi Ghosh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hamna Haq Chouhdry
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Seok Ju Hong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tran Quang Trung
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Geun-Young Kang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Research Centre for Advanced Materials Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
- Samsung Advanced Institute for Health Sciences & Technology (SAIHST), Institute of Quantum Biophysics (IQB) and Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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30
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Wang C, Bian Y, Liu K, Qin M, Zhang F, Zhu M, Shi W, Shao M, Shang S, Hong J, Zhu Z, Zhao Z, Liu Y, Guo Y. Strain-insensitive viscoelastic perovskite film for intrinsically stretchable neuromorphic vision-adaptive transistors. Nat Commun 2024; 15:3123. [PMID: 38600179 PMCID: PMC11006893 DOI: 10.1038/s41467-024-47532-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 04/04/2024] [Indexed: 04/12/2024] Open
Abstract
Stretchable neuromorphic optoelectronics present tantalizing opportunities for intelligent vision applications that necessitate high spatial resolution and multimodal interaction. Existing neuromorphic devices are either stretchable but not reconcilable with multifunctionality, or discrete but with low-end neurological function and limited flexibility. Herein, we propose a defect-tunable viscoelastic perovskite film that is assembled into strain-insensitive quasi-continuous microsphere morphologies for intrinsically stretchable neuromorphic vision-adaptive transistors. The resulting device achieves trichromatic photoadaptation and a rapid adaptive speed (<150 s) beyond human eyes (3 ~ 30 min) even under 100% mechanical strain. When acted as an artificial synapse, the device can operate at an ultra-low energy consumption (15 aJ) (far below the human brain of 1 ~ 10 fJ) with a high paired-pulse facilitation index of 270% (one of the best figures of merit in stretchable synaptic phototransistors). Furthermore, adaptive optical imaging is achieved by the strain-insensitive perovskite films, accelerating the implementation of next-generation neuromorphic vision systems.
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Affiliation(s)
- Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yangshuang Bian
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Kai Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingliang Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Mingchao Shao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Shengcong Shang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiaxin Hong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiheng Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Zhiyuan Zhao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, 100190, Beijing, China.
- School of Chemical Sciences, University of Chinese Academy of Sciences, 100049, Beijing, China.
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Qian Y, Li J, Li W, Huang W, Ling H, Shi W, Wang J, Huang W, Yi M. PBDB-T/Pentacene-Based Organic Optoelectronic Synaptic Transistor with Adjustable Critical Flicker Fusion Frequency for Dynamic Vision. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38600805 DOI: 10.1021/acsami.3c19165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
In the era of the Internet of Things and the rapid progress of artificial intelligence, there is a growing demand for advanced dynamic vision systems. Vision systems are no longer confined to static object detection and recognition, as the detection and recognition of moving objects are becoming increasingly important. To meet the requirements for more precise and efficient dynamic vision, the development of adaptive multimodal motion detection devices becomes imperative. Inspired by the varied response rates in biological vision, we introduce the concept of critical flicker fusion frequency (cFFF) and develop an organic optoelectronic synaptic transistor with adjustable cFFF. In situ Kelvin probe force microscopy analysis reveals that light signal recognition in this device originates from charge transfer in the poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)-benzo[1,2-c:4,5-c']dithiophene-4,8-dione)] (PBDB-T)/pentacene heterojunction, which can be effectively modulated by gate voltage. Building upon this, we implement different cFFF within a single device to facilitate the detection and recognition of objects moving at different speeds. This approach allows for resource allocation during dynamic detection, resulting in a reduction in power consumption. Our research holds great potential for enhancing the capabilities of dynamic visual systems.
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Affiliation(s)
- Yangzhou Qian
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Jiayu Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Wanxin Huang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Wei Shi
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Jin Wang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), Nanjing 210023, China
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Song J, Liu C, Piradi V, Chen C, Zhu Y, Zhu X, Li L, Wong W, Yan F. Large-Area Fabrication of Hexaazatrinaphthylene-Based 2D Metal-Organic Framework Films for Flexible Photodetectors and Optoelectronic Synapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305551. [PMID: 38263724 PMCID: PMC10987135 DOI: 10.1002/advs.202305551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 10/12/2023] [Indexed: 01/25/2024]
Abstract
2D conjugated metal-organic frameworks (c-MOFs) have emerged as promising materials for (opto)electronic applications due to their excellent charge transport properties originating from the unique layered-stacked structures with extended in-plane conjugation. The further advancement of MOF-based (opto)electronics necessitates the development of novel 2D c-MOF thin films with high quality. Cu-HHHATN (HHHATN: hexahydroxyl-hexaazatrinaphthylene) is a recently reported 2D c-MOF featuring high in-plane conjugation, strong interlayer π-π stacking, and multiple coordination sites, while the production of its thin-film form has not yet been reported. Herein, large-area Cu-HHHATN thin films with preferential orientation, high uniformity, and smooth surfaces are realized by using a convenient layer-by-layer growth method. Flexible photodetectors are fabricated, showing broadband photoresponse ranging from UV to short-wave infrared (370 to 1450 nm). The relatively long relaxation time of photocurrent, which arises from the trapping of photocarriers, renders the device's synaptic plasticity similar to that of biological synapses, promising its use in neuromorphic visual systems. This work demonstrates the great potential of Cu-HHHATN thin films in flexible optoelectronic devices for various applications.
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Affiliation(s)
- Jiajun Song
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Chun‐Ki Liu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Venkatesh Piradi
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Department of ChemistryHong Kong Baptist UniversityKowloon Tong, KowloonHong KongP. R. China
| | - Changsheng Chen
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Ye Zhu
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Xunjin Zhu
- Department of ChemistryHong Kong Baptist UniversityKowloon Tong, KowloonHong KongP. R. China
| | - Li Li
- School of Fashion and TextilesThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Wai‐Yeung Wong
- Department of Applied Biology and Chemical Technology and Research Institute for Smart EnergyThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Research Institute of Intelligent Wearable SystemsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
| | - Feng Yan
- Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
- Research Institute of Intelligent Wearable SystemsThe Hong Kong Polytechnic UniversityHung Hom, KowloonHong KongP. R. China
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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Qi M, Xu R, Ding G, Zhou K, Zhu S, Leng Y, Sun T, Zhou Y, Han ST. An in-sensor humidity computing system for contactless human-computer interaction. MATERIALS HORIZONS 2024; 11:939-948. [PMID: 38078356 DOI: 10.1039/d3mh01734f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Being capable of processing large amounts of redundant data and decreasing power consumption, in-sensor computing approaches play significant roles in neuromorphic computing and are attracting increasing interest in perceptual information processing. Herein, we proposed a high performance humidity-sensitive memristor based on a Ti/graphene oxide (GO)/HfOx/Pt structure and verified its potential for application in remote health management and contactless human-machine interfaces. Since GO possesses abundant hydrophilic groups (carbonyl, epoxide, and hydroxyl), the memristor shows a high humidity sensitivity, fast response, and wide response range. By utilizing the proton-modulated redox reaction, humidity exposure to the memristor induces a dynamic change in the switching between high and low resistance states, ensuring essential synaptic learning functions, such as paired-pulse facilitation, spike number-dependent plasticity, and spike amplitude-dependent plasticity. More importantly, based on the humidity-induced salient features originating from the abundant hydrophilic functional groups in GO, we have implemented a noncontact human-machine interface utilizing the respiratory mode in humans, demonstrating the potential of promoting health monitoring applications and effectively blocking virus transmission. In addition, the high recognition accuracy of contactless handwriting in a 5 × 5 array artificial neural network was successfully achieved, which is attributed to the excellent emulated synaptic behaviors. This study provides a feasible method to develop an excellent humidity-sensitive memristor for constructing efficient in-sensor computing for application in health management and contactless human-computer interaction.
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Affiliation(s)
- Meng Qi
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Runze Xu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shirui Zhu
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yanbing Leng
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute for Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, China.
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Zhu S, Xie T, Lv Z, Leng YB, Zhang YQ, Xu R, Qin J, Zhou Y, Roy VAL, Han ST. Hierarchies in Visual Pathway: Functions and Inspired Artificial Vision. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301986. [PMID: 37435995 DOI: 10.1002/adma.202301986] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 06/28/2023] [Accepted: 07/10/2023] [Indexed: 07/13/2023]
Abstract
The development of artificial intelligence has posed a challenge to machine vision based on conventional complementary metal-oxide semiconductor (CMOS) circuits owing to its high latency and inefficient power consumption originating from the data shuffling between memory and computation units. Gaining more insights into the function of every part of the visual pathway for visual perception can bring the capabilities of machine vision in terms of robustness and generality. Hardware acceleration of more energy-efficient and biorealistic artificial vision highly necessitates neuromorphic devices and circuits that are able to mimic the function of each part of the visual pathway. In this paper, we review the structure and function of the entire class of visual neurons from the retina to the primate visual cortex within reach (Chapter 2) are reviewed. Based on the extraction of biological principles, the recent hardware-implemented visual neurons located in different parts of the visual pathway are discussed in detail in Chapters 3 and 4. Furthermore, valuable applications of inspired artificial vision in different scenarios (Chapter 5) are provided. The functional description of the visual pathway and its inspired neuromorphic devices/circuits are expected to provide valuable insights for the design of next-generation artificial visual perception systems.
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Affiliation(s)
- Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tao Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yu-Qi Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Runze Xu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingrun Qin
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, Hong Kong Metropolitan University, Hong Kong, 999077, P. R. China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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Choi C, Lee GJ, Chang S, Song YM, Kim DH. Nanomaterial-Based Artificial Vision Systems: From Bioinspired Electronic Eyes to In-Sensor Processing Devices. ACS NANO 2024; 18:1241-1256. [PMID: 38166167 DOI: 10.1021/acsnano.3c10181] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
High-performance robotic vision empowers mobile and humanoid robots to detect and identify their surrounding objects efficiently, which enables them to cooperate with humans and assist human activities. For error-free execution of these robots' tasks, efficient imaging and data processing capabilities are essential, even under diverse and complex environments. However, conventional technologies fall short of meeting the high-standard requirements of robotic vision under such circumstances. Here, we discuss recent progress in artificial vision systems with high-performance imaging and data processing capabilities enabled by distinctive electrical, optical, and mechanical characteristics of nanomaterials surpassing the limitations of traditional silicon technologies. In particular, we focus on nanomaterial-based electronic eyes and in-sensor processing devices inspired by biological eyes and animal visual recognition systems, respectively. We provide perspectives on key nanomaterials, device components, and their functionalities, as well as explain the remaining challenges and future prospects of the artificial vision systems.
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Affiliation(s)
- Changsoon Choi
- Center for Optoelectronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Gil Ju Lee
- Department of Electronics Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
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Chen Y, Huang Y, Zeng J, Kang Y, Tan Y, Xie X, Wei B, Li C, Fang L, Jiang T. Energy-Efficient ReS 2-Based Optoelectronic Synapse for 3D Object Reconstruction and Recognition. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58631-58642. [PMID: 38054897 DOI: 10.1021/acsami.3c14958] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
The neuromorphic vision system (NVS) equipped with optoelectronic synapses integrates perception, storage, and processing and is expected to address the issues of traditional machine vision. However, owing to their lack of stereo vision, existing NVSs focus on 2D image processing, which makes it difficult to solve problems such as spatial cognition errors and low-precision interpretation. Consequently, inspired by the human visual system, an NVS with stereo vision is developed to achieve 3D object recognition, depending on the prepared ReS2 optoelectronic synapse with 12.12 fJ ultralow power consumption. This device exhibits excellent optical synaptic plasticity derived from the persistent photoconductivity effect. As the cornerstone for 3D vision, color planar information is successfully discriminated and stored in situ at the sensor end, benefiting from its wavelength-dependent plasticity in the visible region. Importantly, the dependence of the channel conductance on the target distance is experimentally revealed, implying that the structure information on the object can be directly captured and stored by the synapse. The 3D image of the object is successfully reconstructed via fusion of its planar and depth images. Therefore, the proposed 3D-NVS based on ReS2 synapses for 3D objects achieves a recognition accuracy of 97.0%, which is much higher than that for 2D objects (32.6%), demonstrating its strong ability to prevent 2D-photo spoofing in applications such as face payment, entrance guard systems, and others.
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Affiliation(s)
- Yabo Chen
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, P. R. China
| | - Yujie Huang
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, P. R. China
| | - Junwei Zeng
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, P. R. China
| | - Yan Kang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, P. R. China
| | - Yinlong Tan
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, P. R. China
| | - Xiangnan Xie
- Institute of Quantum Information Science and Technology, College of Science, National University of Defense Technology, Changsha 410073, P. R. China
| | - Bo Wei
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, P. R. China
| | - Cheng Li
- Institute of Quantum Information Science and Technology, College of Science, National University of Defense Technology, Changsha 410073, P. R. China
| | - Liang Fang
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, P. R. China
| | - Tian Jiang
- Institute of Quantum Information Science and Technology, College of Science, National University of Defense Technology, Changsha 410073, P. R. China
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Hu Z, Yan B. Portable, Intelligent Fluorescence Sensing Platform for Dense Convolutional Network-Capable Detection of Indophenol Sulfate and Methylmalonic Acid Using a Luminescent Eu@HOF Film. ACS Sens 2023; 8:4344-4352. [PMID: 37944941 DOI: 10.1021/acssensors.3c01729] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Indophenol sulfate (IS) and methylmalonic acid (MMA) are biomarkers of chronic kidney disease (CKD) and diabetes polyneuropathy (DPN), respectively. Portable and accurate monitoring of IS and MMA is very important to ensuring human health. The dense convolutional network (DenseNet) with image recognition has great potential in fluorescence sensing, but developing a platform with high precision and portability to diagnose the disease still faces huge challenges. Herein, we developed a high-sensitivity platform with a fluorescence material, a smartphone, and the DenseNet to monitor IS and MMA. A red-emitting Eu@PFC-13 (1) is prepared, and 1 shows high selectivity and low detection limits (DLs) to detect IS and MMA. The sensing mechanism of 1 toward IS and MMA is investigated by experiments and theoretical calculation. For detecting IS and MMA in serum and urine, 1 is fabricated into an Eu@PFC-13/AG (2) film with DLs of 1.4 and 1.6 μM, respectively. In addition, a portable smartphone platform is designed to monitor IS and MMA with high precision. Moreover, the DenseNet is constructed by Python, which can output the concentration of analytes by identifying fluorescence images and judge whether any is in a dangerous range. This work not only proposes a novel method that integrates a fluorescence material, a smartphone, and deep learning to detect analytes but also opens a new way for the diagnosis of CKD and DPN.
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Affiliation(s)
- Zhongqian Hu
- School of Chemical Science and Engineering, Tongji University, Siping Road 1239, Shanghai 200092, China
| | - Bing Yan
- School of Chemical Science and Engineering, Tongji University, Siping Road 1239, Shanghai 200092, China
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Dong X, Chen C, Pan K, Li Y, Zhang Z, He Z, Liu B, Zhou Z, Wu Y, Zhang D, Sun H, Qian X, Xu M, Huang W, Liu J. Nearly Panoramic Neuromorphic Vision with Transparent Photosynapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303944. [PMID: 37635198 PMCID: PMC10602561 DOI: 10.1002/advs.202303944] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/25/2023] [Indexed: 08/29/2023]
Abstract
Neuromorphic vision based on photonic synapses has the ability to mimic sensitivity, adaptivity, and sophistication of bio-visual systems. Significant advances in artificial photosynapses are achieved recently. However, conventional photosyanptic devices normally employ opaque metal conductors and vertical device configuration, performing a limited hemispherical field of view. Here, a transparent planar photonic synapse (TPPS) is presented that offers dual-side photosensitive capability for nearly panoramic neuromorphic vision. The TPPS consisting of all two dimensional (2D) carbon-based derivatives exhibits ultra-broadband photodetecting (365-970 nm) and ≈360° omnidirectional viewing angle. With its intrinsic persistent photoconductivity effect, the detector possesses bio-synaptic behaviors such as short/long-term memory, experience learning, light adaptation, and a 171% pair-pulse-facilitation index, enabling the synapse array to achieve image recognition enhancement (92%) and moving object detection.
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Affiliation(s)
- Xuemei Dong
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Chen Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yinxiang Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zicheng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Dengfeng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Hongchao Sun
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Xinkai Qian
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Min Xu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & EngineeringNorthwestern Polytechnical UniversityXi'an710072China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
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Xu Y, Shi Y, Qian C, Xie P, Jin C, Shi X, Zhang G, Liu W, Wan C, Ho JC, Sun J, Yang J. Optically Readable Organic Electrochemical Synaptic Transistors for Neuromorphic Photonic Image Processing. NANO LETTERS 2023. [PMID: 37229610 DOI: 10.1021/acs.nanolett.3c01291] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Optically readable organic synaptic devices have great potential in both artificial intelligence and photonic neuromorphic computing. Herein, a novel optically readable organic electrochemical synaptic transistor (OR-OEST) strategy is first proposed. The electrochemical doping mechanism of the device was systematically investigated, and the basic biological synaptic behaviors that can be read by optical means are successfully achieved. Furthermore, the flexible OR-OESTs are capable of electrically switching the transparency of semiconductor channel materials in a nonvolatile manner, and thus the multilevel memory can be achieved through optical readout. Finally, the OR-OESTs are developed for the preprocessing of photonic images, such as contrast enhancement and denoising, and feeding the processed images into an artificial neural network, achieving a recognition rate of over 90%. Overall, this work provides a new strategy for the implementation of photonic neuromorphic systems.
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Affiliation(s)
- Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Yiming Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Chuan Qian
- Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, Hunan 410081, People's Republic of China
| | - Pengshan Xie
- Department of Materials Science and Engineering City University of Hong Kong Kowloon, Hong Kong SAR 999077, People's Republic of China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Xiaofang Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Gengming Zhang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Wanrong Liu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Changjin Wan
- School of Electronic Science & Engineering, and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210008, People's Republic of China
| | - Johnny C Ho
- Department of Materials Science and Engineering City University of Hong Kong Kowloon, Hong Kong SAR 999077, People's Republic of China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
| | - Junliang Yang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
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