A Multifunctional "Halide-Equivalent" Anion Enabling Efficient CsPb(Br/I)3 Nanocrystals Pure-Red Light-Emitting Diodes with External Quantum Efficiency Exceeding 23

Nanocubic mixed-halide perovskite superlattices for bright red light-emitting diodes

By controlling the elemental composition, nucleation time, and surface ligands of mixed-halide perovskites, a nanocubic superlattice was achieved. The nanocubic superlattice-based bright red light-emitting diodes demonstrated an exceptional maximum external quantum efficiency of 10.75% and improved operational lifetime.

Efficient White Electroluminescence from Cu-based Perovskite Achieved by High Hole Injection Core/Shell Structures

The copper-based (Cu-based) halide perovskite possesses eco-friendly features, bright self-trapped-exciton (broadband) emission, and a high color-rendering index (CRI) for achieving white emission. However, the limited hole injection (HI) of Cu-based perovskites has been bottle-necking the efficiency of white electroluminescence and thus their application in white perovskite light-emitting diodes (W-PeLEDs). In this study, we demonstrate a p-type cuprous sulfide (Cu2S) lattice-connectedly capping over Cs3Cu2I5 to form lattice-matched core/shell nanocrystals (NCs) by controlling the reactivity of sulfur (S) precursor in the synthesis. Interestingly, the resultant Cs3Cu2I5/Cu2S NCs significantly enhance the hole mobility compared to Cs3Cu2I5 NCs. Besides, the photoluminescence quantum yield of Cs3Cu2I5 NCs increases from 26.8% to 70.6% after the Cu2S lattice-connected capping. Consequently, by establishing the structure of CsCu2I3/Cs3Cu2I5/Cu2S in W-PeLEDs, an external quantum efficiency of 3.45% and a CRI of 91 is realized, representing the highest reported electroluminescent performance in lead-free Cu-based W-PeLEDs. These findings contribute to establishing guidelines and effective strategies for designing broadband electroluminescent materials and device structures of PeLEDs.

Crystallization Thermodynamics Regulation of 1.85 eV Wide-Bandgap Perovskite for Efficient and Stable Perovskite-Organic Tandem Photovoltaics

Wide-band gap perovskite with adjustable band gaps can be integrated with organic solar cells to form tandem solar cells (TSCs), thereby surpassing the Shockley-Queisser limit. However, increasing Br content to elevate the band gap above 1.8 eV complicates crystallization, leading to inferior film quality and defects due to the unmanageable evolution of intermediate phases. Surface passivation improves crystallization but hard to moderate the inhomogeneous component distributions and defects in the bulk phase. Here, we introduce a diammonium salt as an additive to regulate the homogeneity and crystallization of perovskite film, eliminating the low-dimensional intermediate phase for orientated crystallization of 1.85 eV perovskite, resulting in efficient wide-band gap perovskite solar cells with an impressive open-circuit voltage (Voc) of 1.379 V and operational stability remaining 85 % of their initial efficiency after illumination for 1200 h. Furthermore, perovskite-organic TSCs achieve a champion power conversion efficiency of 24.03 % and a high Voc of 2.108 V, one of the highest Voc for perovskite-organic TSCs.

Fluoride Ion Passivation of CsPbBr3 Nanocrystals at Room Temperature for Highly Efficient and Stable White Light-Emitting Diodes

Inorganic halide perovskite nanocrystals (NCs) are regarded as promising emitters for light-emitting diodes due to their bright and narrow emission. However, surface defects often result in trap states and ion migration, which remains a huge challenge for high-quality perovskite NCs. Herein, fluoride ions are introduced into CsPbBr3 perovskite NCs at room temperature through the chelation of ligands. Experimental results demonstrate that these fluoride ions from inorganic salts can improve the average lifetime and crystallinity of CsPbBr3 NCs. Meanwhile, the resulting photoluminescence quantum yield is optimized up to 99.02%, and it has high stability to water, heat, and ultraviolet light. Density functional theory calculations show that fluoride ions have a higher binding energy compared to other ligands, which not only removes the electron trapping center but also increases the halogen ion migration energy. By mixing green-emission CsPbBr3 NCs and red-emission K2SiF6:Mn4+ phosphors on a blue chip, the fabricated white light emitting diode shows a high luminous efficiency of 147.8 lm/W, a wide color gamut (129% for NTSC), and CIE coordinates of (0.3160, 0.3051). Furthermore, the photoluminescence intensity decreased by only 2.9% after 48 h of continuous operation.

Strategies for Stabilizing Metal Halide Perovskite Light-Emitting Diodes: Bulk and Surface Reconstruction of Perovskite Nanocrystals

Light-emitting colloidal lead halide perovskite nanocrystals (PeNCs) are considered promising candidates for next-generation vivid displays. However, the operational stability of light-emitting diodes (LEDs) based on PeNCs is still lower than those based on polycrystalline perovskite films, which requires an understanding of defect formation in PeNCs, both inside the crystal lattice ("bulk") and at the surface. Meanwhile, uncontrollable ion redistribution and electrochemical reactions under LED operation can be severe, which is also related to the bulk and surface quality of PeNCs, and a well-designed device architecture can boost carrier injection and balance radiative recombination. In this review, we consider bulk and surface reconstruction of PeNCs by enhancing the crystal lattice rigidity and rationally selecting the surface ligands. Degradation pathways of PeNCs under applied voltage are discussed, and strategies are considered to avoid both undesirable ion migration and electrochemical reactions in the PeNC films. Subsequently, other critical issues hindering the commercial application of PeNC LEDs are discussed, including the toxicity of Pb in lead halide perovskites, scale-up deposition of PeNC films, and design of active-matrix prototypes for high-resolution LED modules.

Controllable Transition Metal Cations Doping Enable Efficient and Spectral Stable Pure-Red Perovskite QLED

Mixed-halide perovskite plays important role in wide-color gamut displays as a vital material for three primary colors. However, halide segregation and caused unstable spectra are the intrinsic problem in mixed-halide perovskite light-emitting diodes (PeLEDs) originating from the lattice strain and the resulting defects in perovskite quantum dots (PQDs). Here, smaller transition metal cations are applied to replace Pb2+ and release lattice strain, which avoids halogen escaping/halide vacancies forming to ensure high photoluminescence quantum yield (PLQY) and stable spectra. However, the actual doping amount is limited by ionic size and chemical environment, which will affect the improvement of optoelectronic performance. Thus, this study proposes a strategy by introducing tri-n-octylphosphine to coordinate strongly with metal cations and catch them to participate the nucleation-growth process. Through doping transition metal cations effectively, the CsPb(BrI)3 PQDs show high PLQY (92%) and long lifetime (107.83 ns). Further, highly efficient pure-red PeLEDs with highest external quantum efficiency of 16.86% is fabricated and the spectrum can be stabilized at 630 nm with only 1 nm red-shift under bias, showing the promising potential of PQDs for next-generation display.

Efficient perovskite LEDs with tailored atomic layer number emission at fixed wavelengths

Colloidal quantum dots (QDs) have illuminated computer monitors and television screens due to their fascinating color-tunable properties depending on the size. Here, the electroluminescence (EL) wavelength of perovskite LEDs was tuned via the atomic layer number (ALN) of nanoplates (NPs) instead of the "size" in conventional QDs. We demonstrated efficient LEDs with controllably tailored emission from n = 3, 4, 5, and ≥7 ALN perovskite NPs with specific and discrete major peaks at 607, 638, 669, and 728 nanometers. These LEDs demonstrated peak external quantum efficiency (EQE) of 26.8% and high wavelength reproducibility with less than 1 to 2 nm difference between batches. High color stability without observable EL spectral change and operating stability with the best T50 of 267 minutes at 1.0 milliampere per square centimeter was also achieved. This work demonstrates a concept of tailoring specific ALN emission with fixed wavelengths, shedding light on efficient, emission-discrete, and color-stable LEDs for next-generation display.

Single Solid-State Emissive Carbon Quantum Dots for Multicolor, Bright and Efficient Electroluminescent Light-Emitting Diodes

Color-tunable electroluminescent light-emitting diodes (LEDs) based on quantum dots (QDs) are rapidly emerging as a key technology for next-generation full-color displays and solid-state lighting. However, achieving broad color tunability in LEDs that utilize a single QD emissive material continues to pose significant challenges. Here, we present the first example of bright, multicolor electroluminescent LEDs with tunable emission peaks spanning from 535 to 640 nm, utilizing a new type of single red solid-state emissive carbon quantum dots (R-SSCQDs). Unlike conventional CQDs, which often exhibit weak or negligible emission in solid-state form, R-SSCQDs demonstrate bright red emission in solid state and green emission in diluted state. Experimental investigations and theoretical calculations reveal that the unique non-planar spatial structure and significant steric hindrance of R-SSCQDs effectively suppress π-π stacking, resulting in efficient solid-state fluorescence emission. By adjusting the weight ratios of R-SSCQDs doped in host materials, we showcase bright, efficient and multicolor CQD-based LEDs that emit green, yellow, orange, and red light, achieving a record-high luminance of 15,834 cd m-2 and current efficiency of 10.3 cd A-1. This work presents a straightforward and universal strategy for creating efficient solid-state emissive CQDs, showcasing significant potential for color-tunable LED applications.

Adaptive In-Sensor Computing for Enhanced Feature Perception and Broadband Image Restoration

Traditional imaging systems struggle in weak or complex lighting environments due to their fixed spectral responses, resulting in spectral mismatches and degraded image quality. To address these challenges, a bioinspired adaptive broadband image sensor is developed. This innovative sensor leverages a meticulously designed type-I heterojunction alignment of 0D perovskite quantum dots (PQDs) and 2D black phosphorus (BP). This configuration enables efficient carrier injection control and advanced computing capabilities within an integrated phototransistor array. The sensor's unique responses to both visible and infrared (IR) light facilitate selective enhancement and precise feature extraction under varying lighting conditions. Furthermore, it supports real-time convolution and image restoration within a convolutional autoencoder (CAE) network, effectively countering image degradation by capturing spectral features. Remarkably, the hardware responsivity weights perform comparably to software-trained weights, achieving an image restoration accuracy of over 85%. This approach offers a robust and versatile solution for machine vision applications that demand precise and adaptive imaging in dynamic lighting environments.

Light-Emitting Diodes Based on Metal Halide Perovskite and Perovskite Related Nanocrystals

Light-emitting diodes (LEDs) based on halide perovskite nanocrystals have attracted extensive attention due to their considerable luminescence efficiency, wide color gamut, high color purity, and facile material synthesis. Since the first demonstration of LEDs based on MAPbBr3 nanocrystals was reported in 2014, the community has witnessed a rapid development in their performances. In this review, a historical perspective of the development of LEDs based on halide perovskite nanocrystals is provided and then a comprehensive survey of current strategies for high-efficiency lead-based perovskite nanocrystals LEDs, including synthesis optimization, ion doping/alloying, and shell coating is presented. Then the basic characteristics and emission mechanisms of lead-free perovskite and perovskite-related nanocrystals emitters in environmentally friendly LEDs, from the standpoint of different emission colors are reviewed. Finally, the progress in LED applications is covered and an outlook of the opportunities and challenges for future developments in this field is provided.

Hetero-Nucleation Induced [111]-Oriented Mixed Halide Perovskite for Stable Pure Red Light-Emitting Diodes

Mixed halide 3D perovskites are promising for bright, efficient, and wide-color gamut light-emitting diodes (LEDs) due to their excellent carrier transport, high luminescence, and easily tunable bandgaps. However, serious halide ion migration inside mixed halide 3D perovskite results in poor operational and spectral stability of the as-fabricated LEDs. Here, a hetero-nucleation crystallization strategy is reported to grow [111]-orientation preferred mixed halide 3D perovskite CsPbI3-xBrx thin films for stable pure red LEDs. This hetero-nucleation crystallization is enabled by the addition of phosphoric acid (H3PO4) complexation, which promotes the growth of small perovskite grains into large grains with uniform [111]-orientation. The obtained [111]-orientation preferred film exhibits excellent stability under light or electric field stimulus as revealed by model analysis and experimental results compared to that of [001]-orientation preferred film. Thus, based on the [111]-orientation preferred film, the fabricated LED exhibits an external quantum efficiency of 22.8%, a maximum brightness of 12 000 cd m-2, and a half-life time of 4080 min under 1.5 mA cm-2. More importantly, the electroluminescence spectrum of the device remains stable during the continuous operation of 4080 min, showcasing the significant spectral stability improvement enabled by the hetero-nucleation induced [111]-orientation strategy.

Inhibiting the Appearance of Green Emission in Mixed Lead Halide Perovskite Nanocrystals for Pure Red Emission

Mixed halide perovskites exhibit promising optoelectronic properties for next-generation light-emitting diodes due to their tunable emission wavelength that covers the entire visible light spectrum. However, these materials suffer from severe phase segregation under continuous illumination, making long-term stability for pure red emission a significant challenge. In this study, we present a comprehensive analysis of the role of halide oxidation in unbalanced ion migration (I/Br) within CsPbI2Br nanocrystals and thin films. We also introduce a new approach using cyclic olefin copolymer (COC) to encapsulate CsPbI2Br perovskite nanocrystals (PNCs), effectively suppressing ion migration by increasing the corresponding activation energy. Compared with that of unencapsulated samples, we observe a substantial reduction in phase separation under intense illumination in PNCs with a COC coating. Our findings show that COC enhances phase stability by passivating uncoordinated surface defects (Pb2+ and I-), increasing the formation energy of halide vacancies, improving the charge carrier lifetime, and reducing the nonradiative recombination density.

Bifunctional Ligand Passivation Enables Stable Blue Mixed-Halide CsPb(Br/Cl)3 Perovskite Quantum Dots toward Light-Emitting Diodes

Mixed-halide CsPb(Br/Cl)3 perovskite quantum dots (PeQDs) have attracted extensive attention in light-emitting diodes (LEDs), but their low photoluminescent efficiency and especially poor stability impede their practical applications. Here, we employ bifunctional didodecyldimethylammonium thiocyanide (DDASCN) with a pseudohalogen SCN- and branched DDA+ to obtain blue-emitting CsPbBr2Cl PeQDs. DDASCN significantly boosts the photoluminescence quantum yield to 92% by inhibiting nonradiative recombination. Importantly, DDASCN PeQDs show excellent stabilities against air, UV light, heat, and polar solvents. These improved performances were explained by density functional theory calculation, which shows that SCN- fills the Cl- vacancy by simultaneously binding with undercoordinated Pb2+ and Cs+, while DDA+ connects undercoordinated Br- and lies parallel to the PeQD core, leading to efficient passivation and a strong binding capacity. Finally, we achieved high-performance white LEDs by integrating our PeQDs, resulting in a color-rendering index of 92.9, a color gamut of 119.61%, and chromaticity coordinates of (0.33, 0.33). This provides an effective method to obtain efficient and stable CsPb(Br/Cl)3 PeQDs for practical applications.

Strongly-Confined CsPbBr3 Perovskite Quantum Dots with Ultralow Trap Density and Narrow Size Distribution for Efficient Pure-Blue Light-Emitting Diodes

The development of pure-blue perovskite light-emitting diodes (PeLEDs) faces challenges of spectral stability and low external quantum efficiency (EQE) due to phase separation in mixed halide compositions. Perovskite quantum dots (QDs) with strong confinement effects are promising alternatives to achieve high-quality pure-blue PeLEDs, yet their performance is often hindered by the poor size distribution and high trap density. A strategy combining thermodynamic control with a polishing-driven ligand exchange process to produce high-quality QDs is developed. The strongly-confined pure-blue (≈470 nm) CsPbBr3 QDs exhibit narrow size distribution (12% dispersion) and are achieved in Br-rich ion environment based on growth thermodynamic control. Subsequent polishing-driven ligand exchange process removes imperfect surface sites and replaces initial long-chain organic ligands with short-chain benzene ligands. The resulting QDs exhibit high photoluminescence quantum yield (PLQY) to near-unity. The resulting PeLEDs exhibit a pure-blue electroluminescence (EL) emission at 472 nm with narrow full-width at half-maximum (FWHM) of 25 nm, achieving a maximum EQE of 10.7% and a bright maximum luminance of 7697 cd m-2. The pure-blue PeLEDs show ultrahigh spectral stability under high voltage, a low roll-off of EQE, and an operational half-lifetime (T50) of 127 min at an initial luminance of 103 cd m-2 under continuous operation.

Ultrafast Rejuvenation of Aged CsPbI3 Quantum Dots and Efficiency Improvement by Sequential 1-Dodecanethiol Post-Treatment Strategy

Metal halide perovskite CsPbI3 quantum dots (QDs) have sparked widespread research due to their intriguing optoelectronic. However, the CsPbI3 QDs undergo inevitable aging and luminescence quenching caused by the weak binding ability of oleate (OA-)/oleylammonium (OAm+), hindering further practical application. Herein, we have realized ultrafast rejuvenation of the aged CsPbI3 QDs that have lost their photoluminescence performance based on a 1-dodecanethiol (DDT) surface ligand to restore the outstanding red light emission with a high photoluminescence quantum yield (PLQY) from 25 to 90%. Furthermore, CsPbI3 QDs with DDT surface treatment maintain a cubic phase and high PLQY value even after 35 days. The DDT ligands can form a strong bond with Pb2+ and passivate I- ion vacancies, enhancing radiative recombination efficiency and thereby improving the PLQY of the QDs. The stable yet easily accessible surface of the DDT-capped CsPbI3 QDs was successfully employed as white LEDs and exhibited considerable enhanced luminous performance, suggesting promising application in solid-state lighting fields.

Thermal management towards ultra-bright and stable perovskite nanocrystal-based pure red light-emitting diodes

Despite the promising candidacy of perovskite nanocrystals for light-emitting diodes, their pure red electroluminescence is hindered by low saturated luminance, severe external quantum efficiency roll-off, and inferior operational stability. Here, we report ultra-bright and stable pure red light-emitting diodes by manipulating Joule heat generation in the nanocrystal emissive layer and thermal management within the device. Diphenylphosphoryl azide-mediated regulation of the nanocrystal surface synergistically enhances the optical properties and carrier transport of the emissive layer, enabling reduced Joule heat generation and thus lowering the working temperature. These merits inhibit ion migration of the CsPb(Br/I)3 nanocrystal film, promising excellent spectra stability. Combined with the highly thermal-conductive sapphire substrates and implementation of pulse-driving mode, the pure red light-emitting diodes exhibit an ultra-bright luminance of 390,000 cd m-2, a peak external quantum efficiency of 25%, suppressed efficiency roll-off, an operational half-life of 20 hours, and superior spectral stability within 15 A cm-2.

High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots

CsPbI3 perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy (EB) and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K+ and I- to bond to the surface of SQDs. The EB of the SQDs was decreased from 305 to 51 meV because of the attraction of K+ to electrons, meanwhile surface vacancies were passivated by K+ and I-. The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m-2.

Vertically Concentrated Quantum Wells Enabling Highly Efficient Deep-Blue Perovskite Light-Emitting Diodes

Deep-blue perovskite light-emitting diodes (PeLEDs) based on quasi-two-dimensional (quasi-2D) systems exist heightened sensitivity to the domain distribution. The top-down crystallization mode will lead to a vertical gradient distribution of quantum well (QW) structure, which is unfavorable for deep-blue emission. Herein, a thermal gradient annealing treatment is proposed to address the polydispersity issue of vertical QWs in quasi-2D perovskites. The formation of large-n domains at the upper interface of the perovskite film can be effectively inhibited by introducing a low-temperature source in the annealing process. Combined with the utilization of NaBr to inhibit the undesirable n=1 domain, a vertically concentrated QW structure is ultimately attained. As a result, the fabricated device delivers a narrow and stable deep-blue emission at 458 nm with an impressive external quantum efficiency (EQE) of 5.82 %. Green and sky-blue PeLEDs with remarkable EQE of 21.83 % and 17.51 % are also successfully achieved, respectively, by using the same strategy. The findings provide a universal strategy across the entire quasi-2D perovskites, paving the way for future practical application of PeLEDs.

Enhancing crystal integrity and structural rigidity of CsPbBr3 nanoplatelets to achieve a narrow color-saturated blue emission

Quantum-confined CsPbBr3 perovskites are promising blue emitters for ultra-high-definition displays, but their soft lattice caused by highly ionic nature has a limited stability. Here, we endow CsPbBr3 nanoplatelets (NPLs) with atomic crystal-like structural rigidity through proper surface engineering, by using strongly bound N-dodecylbenzene sulfonic acid (DBSA). A stable, rigid crystal structure, as well as uniform, orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage, by switching from molecular clusters to mono-octahedra, while interaction with DBSA resulted in formation of a CsxO monolayer shell capping the NPL surface. As a result, both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA, which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand desorption. Moreover, rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films, which facilitates efficient charge injection and transport. Blue photoluminescence of the produced CsPbBr3 NPLs is bright (nearly unity emission quantum yield) and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K, while the bandwidth of the electroluminescence (peaked at 460 nm) also reaches a record-narrow value of 15 nm at room temperature. This value corresponds to the CIE coordinates of (0.141, 0.062), which meets Rec. 2020 standards for ultra-high-definition displays.

Electrohydrodynamic Inkjet Printing of Three-Dimensional Perovskite Nanocrystal Arrays for Full-Color Micro-LED Displays

Perovskite nanocrystal (PeNC) arrays are showing a promising future in the next generation of micro-light-emitting-diode (micro-LED) displays due to the narrow emission linewidth and adjustable peak wavelength. Electrohydrodynamic (EHD) inkjet printing, with merits of high resolution, uniformity, versatility, and cost-effectiveness, is among the competent candidates for constructing PeNC arrays. However, the fabrication of red light-emitting CsPbBrxI(3-x) nanocrystal arrays for micro-LED displays still faces challenges, such as low brightness and poor stability. This work proposes a design for a red PeNC colloidal ink that is specialized for the EHD inkjet printing of three-dimensional PeNC arrays with enhanced luminescence and stability as well as being adaptable to both rigid and flexible substrates. Made of a mixture of PeNCs, polymer polystyrene (PS), and a nonpolar xylene solvent, the PeNC colloidal ink enables precise control of array sizes and shapes, which facilitates on-demand micropillar construction. Additionally, the inclusion of PS significantly increases the brightness and environmental stability. By adopting this ink, the EHD printer successfully fabricated full-color 3D PeNC arrays with a spatial resolution over 2500 ppi. It shows the potential of the EHD inkjet printing strategy for high-resolution and robust PeNC color conversion layers for micro-LED displays.

Efficient pure-red perovskite light-emitting diodes with strong passivation via ultrasmall-sized molecules

Perovskite light-emitting diodes (PeLEDs) have attracted great attention in recent years; however, the halogen vacancy defects in perovskite notably hamper the development of high-efficiency devices. Previously, large-sized passivation agents have been usually used, while the effect of defect passivation is limited due to the weak bonding or the large space steric hindrance. Here, we predict that the ultrasmall-sized formate (Fa) and acetate (Ac) have more efficient passivation ability because of the stronger binding with the perovskite, as demonstrated by density functional theory calculation. We introduce ultrasmall-sized cesium salts (CsFa/CsAc) into buried interface, which can also diffuse into the bulk, resulting in both buried interface and bulk passivation. In addition, the improved perovskite growth has been found due to the enhanced hydrophily after introducing CsFa/CsAc as additive. According to these advantages, a pure-red PeLED with 24.2% efficiency at 639 nm has been achieved.

Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display

Perovskite quantum dots (QDs) are promising for various photonic applications due to their high colour purity, tunable optoelectronic properties and excellent solution processability. Surface features impact their optoelectronic properties, and surface defects remain a major obstacle to progress. Here we develop a strategy utilizing diisooctylphosphinic acid-mediated synthesis combined with hydriodic acid-etching-driven nanosurface reconstruction to stabilize CsPbI3 QDs. Diisooctylphosphinic acid strongly adsorbs to the QDs and increases the formation energy of halide vacancies, enabling nanosurface reconstruction. The QD film with nanosurface reconstruction shows enhanced phase stability, improved photoluminescence endurance under thermal stress and electric field conditions, and a higher activation energy for ion migration. Consequently, we demonstrate perovskite light-emitting diodes (LEDs) that feature an electroluminescence peak at 644 nm. These LEDs achieve an external quantum efficiency of 28.5% and an operational half-lifetime surpassing 30 h at an initial luminance of 100 cd m-2, marking a tenfold improvement over previously published studies. The integration of these high-performance LEDs with specifically designed thin-film transistor circuits enables the demonstration of solution-processed active-matrix perovskite displays that show a peak external quantum efficiency of 23.6% at a display brightness of 300 cd m-2. This work showcases nanosurface reconstruction as a pivotal pathway towards high-performance QD-based optoelectronic devices.

Long-range order enabled stability in quantum dot light-emitting diodes

Light-emitting diodes (LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiencies (EQEs) of more than 25% with narrowband emission1,2, but these LEDs have limited operating lifetimes. We posit that poor long-range ordering in perovskite QD films-variations in dot size, surface ligand density and dot-to-dot stacking-inhibits carrier injection, resulting in inferior operating stability because of the large bias required to produce emission in these LEDs. Here we report a chemical treatment to improve the long-range order of perovskite QD films: the diffraction intensity from the repeating QD units increases three-fold compared with that of controls. We achieve this using a synergistic dual-ligand approach: an iodide-rich agent (aniline hydroiodide) for anion exchange and a chemically reactive agent (bromotrimethylsilane) that produces a strong acid that in situ dissolves smaller QDs to regulate size and more effectively removes less conductive ligands to enable compact, uniform and defect-free films. These films exhibit high conductivity (4 × 10-4 S m-1), which is 2.5-fold higher than that of the control, and represents the highest conductivity recorded so far among perovskite QDs. The high conductivity ensures efficient charge transportation, enabling red perovskite QD-LEDs that generate a luminance of 1,000 cd m-2 at a record-low voltage of 2.8 V. The EQE at this luminance is more than 20%. Furthermore, the stability of the operating device is 100 times better than previous red perovskite LEDs at EQEs of more than 20%.

Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I)3 Quantum Dots for High-Performance Pure-Red PeLEDs

Mixed-halide CsPb(Br/I)3 perovskite quantum dots (QDs) are regarded as one of the most promising candidates for pure-red perovskite light-emitting diodes (PeLEDs) due to their precise spectral tuning property. However, the lead-rich surface of these QDs usually results in halide ion migration and nonradiative recombination loss, which remains a great challenge for high-performance PeLEDs. To solve the above issues, we employ a chelating agent of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid hydrate (DOTA) to polish the lead-rich surface of the QDs and meanwhile introduce a new ligand of 2,3-dimercaptosuccinic acid (DMSA) to passivate surface defects of the QDs. This synchronous post-treatment strategy results in high-quality CsPb(Br/I)3 QDs with suppressed halide ion migration and an improved photoluminescence quantum yield, which enables us to fabricate spectrally stable pure-red PeLEDs with a peak external quantum efficiency of 23.2%, representing one of the best performance pure-red PeLEDs based on mixed-halide CsPb(Br/I)3 QDs reported to date.

Nucleophilic Reaction-Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light-Emitting Diodes with Efficiency Exceeding 26

High-performance pure red perovskite light-emitting diodes (PeLEDs) with an emission wavelength shorter than 650 nm are ideal for wide-color-gamut displays, yet remain an unprecedented challenge to progress. Mixed-halide CsPb(Br/I)3 emitter-based PeLEDs suffer spectral stability induced by halide phase segregation and CsPbI3 quantum dots (QDs) suffer from a compromise between emission wavelength and electroluminescence efficiency. Here, we demonstrate efficient pure red PeLEDs with an emission centered at 638 nm based on PbClx -modified CsPbI3 QDs. A nucleophilic reaction that releases chloride ions and manipulates the ligand equilibrium of the colloidal system is developed to synthesize the pure red emission QDs. The comprehensive structural and spectroscopic characterizations evidence the formation of PbClx outside the CsPbI3 QDs, which regulates exciton recombination and prevents the exciton from dissociation induced by surface defects. In consequence, PeLEDs based on PbClx -modified CsPbI3 QDs with superior optoelectronic properties demonstrate stable electroluminescence spectra at high driving voltages, a record external quantum efficiency of 26.1 %, optimal efficiency roll-off of 16.0 % at 1000 cd m-2 , and a half lifetime of 7.5 hours at 100 cd m-2 , representing the state-of-the-art pure red PeLEDs. This work provides new insight into constructing the carrier-confined structure on perovskite QDs for high-performance PeLEDs.

Ultrastable Photodetectors Based on Blue CsPbBr3 Perovskite Nanoplatelets via a Surface Engineering Strategy

Recently, photodetectors based on perovskite nanoplatelets (NPLs) have attracted considerable attention in the visible spectral region owing to their large absorption cross-section, high exciton binding energy, excellent charge transfer properties, and appropriate flexibility. However, their stability and performance are still challenging for perovskite NPL photodetectors. Here, a surface engineering strategy to enhance the optical stability of blue-light CsPbBr3 NPLs by acetylenedicarboxylic acid (ATDA) treatment has been developed. ATDA has strong binding capacity and a short chain length, which can effectively passivate defects and significantly improve the photoluminescence quantum efficiency, stability, and carrier mobility of NPLs. As a result, ATDA-treated CsPbBr3 NPLs exhibit improved optical properties in both solutions and films. The NPL solution maintains high PL performance even after being heated at 80 °C for 2 h, and the NPL film remains nondegradable after 4 h of exposure to ultraviolet irradiation. Especially, photodetectors based on the treated CsPbBr3 NPL films demonstrate exceptional performance, especially when the detectivity approaches up to 9.36 × 1012 Jones, which can be comparable to the best CsPbBr3 NPL photodetectors ever reported. More importantly, the assembled devices demonstrated high stability (stored in an air environment for more than 30 days), significantly exceeding that of untreated NPLs.

Regulating Charge Carrier Dynamics in Stable Perovskite Nanorods for Photo-Induced Atom Transfer Radical Polymerization

Semiconducting nanocrystals have attracted world-wide research interest in artificial photosynthesis due to their appealing properties and enticing potentials in converting solar energy into valuable chemicals. Compared to 0D nanoparticles, 1D nanorods afford long-distance charge carriers separation and extended charge carriers lifetime due to the release of quantum confinement in axial direction. Herein, stable CsPbBr3 nanorods of distinctive dimensions are crafted without altering their properties and morphology via grafting hydrophobic polystyrene (PS) chains through a post-synthesis ligand exchange process. The resulting PS-capped CsPbBr3 nanorods exhibit a series of enhanced stabilities against UV irradiation, elevated temperature, and polar solvent, making them promising candidates for photo-induced atom transfer radical polymerization (ATRP). Tailoring the surface chemistry and dimension of the PS-capped CsPbBr3 nanorods endows stable, but variable reaction kinetics in the photo-induced ATRP of methyl methacrylate. The trapping-detrapping process of photogenerated charge carriers lead to extended lifetime of charge carriers in lengthened CsPbBr3 nanorods, contributing to a facilitated reaction kinetics of photo-induced ATRP. Therefore, by leveraging such stable PS-capped CsPbBr3 nanorods, the effects of surface chemistry and charge carriers dynamics on its photocatalytic performance are scrutinized, providing fundamental understandings for designing next-generation efficient nanostructured photocatalyst in artificial photosynthesis and solar energy conversion.

How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots

Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).

Entropy-Driven Strongly Confined Low-Toxicity Pure-Red Perovskite Quantum Dots for Spectrally Stable Light-Emitting Diodes

Spectrally stable pure-red perovskite quantum dots (QDs) with low lead content are essential for high-definition displays but are difficult to synthesize due to QD self-purification. Here, we make use of entropy-driven quantum-confined pure-red perovskite QDs to fabricate light-emitting diodes (LEDs) that have low toxicity and are efficient and spectrum-stable. Based on experimental data and first-principles calculations, multiple element alloying results in a 60% reduction in lead content while improving QD entropy to promote crystal stability. Entropy-driven QDs exhibit photoluminescence with 100% quantum yields and single-exponential decay lifetimes without alteration of their morphology or crystal structure. The pure-red LEDs utilizing entropy-driven QDs have spectrally stable electroluminescence, achieving a brightness of 4932 cd/m2, a maximum external quantum efficiency of over 20%, and a 15-fold longer operational lifetime than the CsPbI3 QD-based LEDs. These achievements demonstrate that entropy-driven QDs can mitigate local compositional heterogeneity and ion migration.

The emergence and prospects of carbon dots with solid-state photoluminescence for light-emitting diodes

The significant features of carbon dots (CDs), such as bright and tunable photoluminescence, high thermal stability, and low toxicity, endow them with tremendous potential for application in next generation optoelectronics. Despite great progress achieved in the design of high-performance CDs so far, the practical applications in solid-state lighting and displays have been retarded by the aggregation-caused quenching (ACQ) effect ascribed to direct π-π interactions. This review provides a comprehensive overview of the recent progress made in solid-state CD emitters, including their synthesis, optical properties and applications in light-emitting diodes (LEDs). Their triplet-excited-state-involved properties, as well as their recent advances in phosphor-converted LEDs and electroluminescent LEDs, are mainly reviewed here. Finally, the prospects and challenges of solid-state CD-based LEDs are discussed with an eye on future development. We hope that this review will provide critical insights to inspire new exciting discoveries on solid-state CDs from both fundamental and practical standpoints so that the realization of their potential in optoelectronic areas can be facilitated.

Ligand-Induced Cation-π Interactions Enable High-Efficiency, Bright, and Spectrally Stable Rec. 2020 Pure-Red Perovskite Light-Emitting Diodes

Achieving high-performance perovskite light-emitting diodes (PeLEDs) with pure-red electroluminescence for practical applications remains a critical challenge because of the problematic luminescence property and spectral instability of existing emitters. Herein, high-efficiency Rec. 2020 pure-red PeLEDs, simultaneously exhibiting exceptional brightness and spectral stability, based on CsPb(Br/I)3 perovskite nanocrystals (NCs) capping with aromatic amino acid ligands featuring cation-π interactions, are reported. It is proven that strong cation-π interactions between the PbI6 -octahedra of perovskite units and the electron-rich indole ring of tryptophan (TRP) molecules not only chemically polish the imperfect surface sites, but also markedly increase the binding affinity of the ligand molecules, leading to high photoluminescence quantum yields and greatly enhanced spectral stability of the CsPb(Br/I)3 NCs. Moreover, the incorporation of small-size aromatic TRP ligands ensures superior charge-transport properties of the assembled emissive layers. The resultant devices emitting at around 635 nm demonstrate a champion external quantum efficiency of 22.8%, a max luminance of 12 910 cd m-2 , and outstanding spectral stability, representing one of the best-performing Rec. 2020 pure-red PeLEDs achieved so far.

Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications

Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.

Multi-Functional Ethylene-vinyl Acetate Copolymer Flexible Composite Film Embedded with Indium Acetate-Passivated Perovskite Quantum Dots

In recent years, all-inorganic cesium lead halide perovskite quantum dots have emerged as promising candidates for various optoelectronic applications, including sensors, light-emitting diodes, and solar cells, owing to their exceptional photoelectric properties. However, their commercial utilization has been limited by stability issues. In this study, we addressed this challenge by passivating the surface defects of CsPbBr3 quantum dots using indium acetate, a metal-organic compound. The resulting CsPbBr3 quantum dots exhibited not only high photoluminescence intensity, but also a remarkably narrow half-peak width of 19 nm. Furthermore, by embedding the CsPbBr3 quantum dots in ethylene-vinyl acetate, we achieved stretchability and significantly enhanced stability while preserving the original luminous intensity. The resulting composite film demonstrated the potential to improve the power conversion efficiency of crystalline silicon solar cells and enabled the creation of excellent white light-emitting diodes with coordinates of (0.33, 0.31). This co-passivation strategy, involving surface passivation and polymer packaging, provides a new idea for the practical application of CsPbBr3 quantum dots.

Synergistic Halide- and Ligand-Exchanges of All-Inorganic Perovskite Nanocrystals for Near-Unity and Spectrally Stable Red Emission

All-inorganic perovskite nanocrystals (NCs) of CsPbX3 (X = Cl, Br, I) are promising for displays due to wide color gamut, narrow emission bandwidth, and high photoluminescence quantum yield (PLQY). However, pure red perovskite NCs prepared by mixing halide ions often result in defects and spectral instabilities. We demonstrate a method to prepare stable pure red emission and high-PLQY-mixed-halide perovskite NCs through simultaneous halide-exchange and ligand-exchange. CsPbBr3 NCs with surface organic ligands are first synthesized using the ligand-assisted reprecipitation (LARP) method, and then ZnI2 is introduced for anion exchange to transform CsPbBr3 to CsPbBrxI3-x NCs. ZnI2 not only provides iodine ions but also acts as an inorganic ligand to passivate surface defects and prevent ion migration, suppressing non-radiative losses and halide segregation. The luminescence properties of CsPbBrxI3-x NCs depend on the ZnI2 content. By regulating the ZnI2 exchange process, red CsPbBrxI3-x NCs with organic/inorganic hybrid ligands achieve near-unity PLQY with a stable emission peak at 640 nm. The CsPbBrxI3-x NCs can be combined with green CsPbBr3 NCs to construct white light-emitting diodes with high-color gamut. Our work presents a facile ion exchange strategy for preparing spectrally stable mixed-halide perovskite NCs with high PLQY, approaching the efficiency limit for display or lighting applications.

Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications

Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.