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Li Y, Bai N, Chang Y, Liu Z, Liu J, Li X, Yang W, Niu H, Wang W, Wang L, Zhu W, Chen D, Pan T, Guo CF, Shen G. Flexible iontronic sensing. Chem Soc Rev 2025; 54:4651-4700. [PMID: 40165624 DOI: 10.1039/d4cs00870g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/02/2025]
Abstract
The emerging flexible iontronic sensing (FITS) technology has introduced a novel modality for tactile perception, mimicking the topological structure of human skin while providing a viable strategy for seamless integration with biological systems. With research progress, FITS has evolved from focusing on performance optimization and structural enhancement to a new phase of integration and intelligence, positioning it as a promising candidate for next-generation wearable devices. Therefore, a review from the perspective of technological development trends is essential to fully understand the current state and future potential of FITS devices. In this review, we examine the latest advancements in FITS. We begin by examining the sensing mechanisms of FITS, summarizing research progress in material selection, structural design, and the fabrication of active and electrode layers, while also analysing the challenges and bottlenecks faced by different segments in this field. Next, integrated systems based on FITS devices are reviewed, highlighting their applications in human-machine interaction, healthcare, and environmental monitoring. Additionally, the integration of artificial intelligence into FITS is explored, focusing on optimizing front-end device design and improving the processing and utilization of back-end data. Finally, building on existing research, future challenges for FITS devices are identified and potential solutions are proposed.
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Affiliation(s)
- Yang Li
- School of Integrated Circuits, Shandong University, Jinan, 250101, China
| | - Ningning Bai
- School of Mechano-Electronic Engineering, Xidian University, Xi'an, 710071, China
| | - Yu Chang
- Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, Anhui, 230027, China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, China.
| | - Zhiguang Liu
- Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, Anhui, 230027, China
| | - Jianwen Liu
- School of Integrated Circuits, Shandong University, Jinan, 250101, China
| | - Xiaoqin Li
- School of Integrated Circuits, Shandong University, Jinan, 250101, China
| | - Wenhao Yang
- School of Integrated Circuits, Shandong University, Jinan, 250101, China
| | - Hongsen Niu
- School of Information Science and Engineering, Shandong Provincial Key Laboratory of Ubiquitous Intelligent Computing, University of Jinan, Jinan, 250022, China
| | - Weidong Wang
- School of Mechano-Electronic Engineering, Xidian University, Xi'an, 710071, China
| | - Liu Wang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
| | - Wenhao Zhu
- Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, Anhui, 230027, China
| | - Di Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China.
| | - Tingrui Pan
- Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, Anhui, 230027, China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, China.
| | - Chuan Fei Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China.
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China.
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2
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Yang Q, Zhuang Y, Zhong Z, Cheng X, Li X, Meng X, Shi W, Huang H, Wang J, Chu J. All-Optically Modulated In-Sensor Computing Device Based on Ionic-Conducting CuInP 2Se 6. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2502254. [PMID: 40370135 DOI: 10.1002/adma.202502254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2025] [Revised: 04/28/2025] [Indexed: 05/16/2025]
Abstract
Inspired by the human visual system, in-sensor computing has emerged as a promising approach to address growing demands for real-time image processing while overcoming constraints in computational resources. However, existing in-sensor computing optoelectronic devices still face challenges such as complex heterostructures or limited optical modulation for operational efficiency, restricting their practical use. Here, a simple two-terminal optoelectronic device has been fabricated using the 2D material CuInP2Se6, achieving neuromorphic functionalities through all-optical modulation. The device exhibits a tunable photoresponse across the visible spectrum (400 to 700 nm) and enables bidirectional conductance modulation in response to light stimuli, driven by the interaction between Cu⁺ ions and photogenerated electrons. It shows high linearity with 300 discrete conductance states under red, green, and blue light, enabling color-specific image feature extraction, processing, and recognition across three channels. This approach significantly enhances color image recognition accuracy by 4.6% when integrated with a three-channel convolutional neural network. Additionally, the bidirectional photoresponse allows for efficient noise suppression during color image preprocessing, leading to a 490% improvement in signal-to-noise ratio. These findings highlight the potential of CuInP2Se6-based architecture for robust performance, paving the way for in-sensor neuromorphic vision systems in artificial intelligence and biomimetic computing.
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Affiliation(s)
- Qianyi Yang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Yezhao Zhuang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Zhipeng Zhong
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Xin Cheng
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Xiang Li
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Wu Shi
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Hai Huang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Jianlu Wang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, 201210, China
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Materials Science, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
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3
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Mei T, Chen F, Huang T, Feng Z, Wan T, Han Z, Li Z, Hu L, Lin CH, Lu Y, Cheng W, Qi DC, Chu D. Ion-Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications. ACS NANO 2025; 19:17140-17172. [PMID: 40297996 DOI: 10.1021/acsnano.5c02397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/30/2025]
Abstract
With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.
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Affiliation(s)
- Tingting Mei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Fandi Chen
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tianxu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Zijian Feng
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Tao Wan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Zhaojun Han
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane 4000, Australia
| | - Zhi Li
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT 0200, Australia
| | - Wenlong Cheng
- School of Biomedical Engineering, University of Sydney, Darlington, NSW 2008, Australia
| | - Dong-Chen Qi
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4001, Australia
| | - Dewei Chu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW 2052, Australia
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Li W, Ma C, Wu S, Hu X, Liu Z, Yan Y. Enhanced Mechanical Properties of Polyurethane Ionogels by Synergistic Interaction of Phase-Locking Ion and Hydrogen Bonds. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2503699. [PMID: 40190138 DOI: 10.1002/smll.202503699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2025] [Indexed: 05/27/2025]
Abstract
Ionogels are widely employed in various ionotronic applications. However, the advancement of ionogels with excellent mechanical properties presents significant challenges due to the interactions between ions and the strong polar sites in polymers, which hinder the interchain/intrachain hydrogen bonding interaction. In this work, ionic liquid (IL) with ureido is dispersed into polyurethane cationomer (PUC) solid network by swelling strategy to prepare PUC ionogels (PUCD/IL). The synergistic effects of phase-locked ions and hydrogen bonding between PUC chain and IL enhance the mechanical properties of the PUCD/IL, allowing the strength and elongation at break of PUCD/IL achieved ≈10.50 MPa and ≈1638.74%, which are enhanced by ≈162.50% and ≈80.74%, respectively, compared with the equivalent pure solvent-treated PUC (PUCD). Furthermore, the strength and elongation at break of the PUC ionogel prepared by the traditional solution blending method (PUCB/IL) are only 6.76% (0.71 MPa) and 25.87% (423.93%) of those of PUCD/IL, respectively. In addition, the PUCD/IL exhibits a wide sensing range (strain: ≈1000%; stress: ≈1000 kPa) and fast response time (104/154 ms), enabling stable and repeatable response to human movement for intelligent human posture monitoring applications. This study provides a strategy for the design and preparation of high-performance PUC ionogels for flexible sensors.
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Affiliation(s)
- Wanjiang Li
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
| | - Chuhao Ma
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
| | - Shaoji Wu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
| | - Xulian Hu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
| | - Zhao Liu
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
| | - Yurong Yan
- School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, P. R. China
- Key Lab of Guangdong High Property & Functional Polymer Materials, Guangzhou, 510640, P. R. China
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5
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Li P, Galek P, Grothe J, Kaskel S. Carbon-based iontronics - current state and future perspectives. Chem Sci 2025; 16:7130-7154. [PMID: 40201167 PMCID: PMC11974446 DOI: 10.1039/d4sc06817c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2024] [Accepted: 03/03/2025] [Indexed: 04/10/2025] Open
Abstract
Over the past few decades, carbon materials, including fullerenes, carbon nanotubes, graphene, and porous carbons, have achieved tremendous success in the fields of energy, environment, medicine, and beyond, through their development and application. Due to their unique physical and chemical characteristics for enabling simultaneous interaction with ions and transport of electrons, carbon materials have been attracting increasing attention in the emerging field of iontronics in recent years. In this review, we first summarize the recent progress and achievements of carbon-based iontronics (ionic sensors, ionic transistors, ionic diodes, ionic pumps, and ionic actuators) for multiple bioinspired applications ranging from information sensing, processing, and actuation, to simple and basic artificial intelligent reflex arc units for the construction of smart and autonomous iontronics. Additionally, the promising potential of carbon materials for smart iontronics is highlighted and prospects are provided in this review, which provide new insights for the further development of nanostructured carbon materials and carbon-based smart iontronics.
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Affiliation(s)
- Panlong Li
- Inorganic Chemistry I, Technische Universität Dresden Bergstrasse 66 01069 Dresden Germany
| | - Przemyslaw Galek
- Inorganic Chemistry I, Technische Universität Dresden Bergstrasse 66 01069 Dresden Germany
| | - Julia Grothe
- Inorganic Chemistry I, Technische Universität Dresden Bergstrasse 66 01069 Dresden Germany
| | - Stefan Kaskel
- Inorganic Chemistry I, Technische Universität Dresden Bergstrasse 66 01069 Dresden Germany
- Fraunhofer IWS Winterbergstrasse 28 01277 Dresden Germany
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6
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Song R, Wang P, Zeng H, Zhang S, Wu N, Liu Y, Zhang P, Xue G, Tong J, Li B, Ye H, Liu K, Wang W, Wang L. Nanofluidic Memristive Transition and Synaptic Emulation in Atomically Thin Pores. NANO LETTERS 2025; 25:5646-5655. [PMID: 40155389 DOI: 10.1021/acs.nanolett.4c06297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/01/2025]
Abstract
Ionic transport across nanochannels is the basis of communications in living organisms, enlightening neuromorphic nanofluidic iontronics. Comparing to the angstrom-scale long biological ionic pathways, it remains a great challenge to achieve nanofluidic memristors at such thinnest limit due to the ambiguous electrical model and interaction process. Here, we report atomically thin memristive nanopores in two-dimensional materials by designing optimized ionic conductance to decouple the memristive, ohmic, and capacitive effects. By conducting different charged iontronics, we realize the reconfigurable memristive transition between nonvolatile-bipolar and volatile-unipolar characteristics, which arises from distinct transport processes governed by energy barriers. Notably, we emulate synaptic functions with ultralow energy consumption of ∼0.546 pJ per spike and reproduce biological learning behaviors. The memristive nanopores are similar to the biosystems in angstrom structure, rich iontronic responses, and millisecond-level operating pulse width, matching the biological potential width. This work provides a new paradigm for boosting brain-inspired nanofluidic devices.
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Affiliation(s)
- Ruiyang Song
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Peng Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Haiou Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Shengping Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Ningran Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Yuancheng Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Pan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Guodong Xue
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Junhe Tong
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Bohai Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Hongfei Ye
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Wei Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
| | - Luda Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing 100871, P. R. China
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7
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Park MH, Kim Y, Choi MJ, Kim YB, Yun JM, Jeong JH, Kim S, Park S, Kang SJ. Enhanced In-Sensor Computing with Spike Number-Dependent Plasticity Characteristics in an InGaSnO Optical Neuromorphic Device for Accelerating Machine Vision. ACS NANO 2025; 19:13107-13117. [PMID: 40146945 DOI: 10.1021/acsnano.4c18379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/29/2025]
Abstract
In-sensor computing systems based on optical neuromorphic devices have attracted increasing attention to improve the efficiency and accuracy of machine vision systems. However, most materials used in optical neuromorphic devices exhibit spike timing-dependent plasticity (STDP) behavior in response to input light signals, leading to complex in-sensor computing and reduced machine vision accuracy. To address this issue, we introduce an indium gallium tin oxide (IGTO) semiconductor designed to enhance spike number-dependent plasticity (SNDP) in response to input light signals while eliminating the STDP behavior. Here, an IGTO-based optical neuromorphic device shows enhanced SNDP characteristics, which are attributed to the strong Sn-O bonding, as verified by photoemission spectroscopy (PES) analysis. The IGTO-based device consistently reaches the same conduction state after 8 light pulses regardless of the pulse timing and also achieves a conduction state based on the number of input light pulses even when 15 different pulse sets are applied. These results exhibit the SNDP characteristics of the IGTO-based device. Notably, in-sensor computing with the SNDP-enhanced device reduces multilayer perceptron (MLP) training time by 87.7% while achieving high classification accuracy. This study demonstrates that in-sensor computing systems with SNDP characteristics in optical neuromorphic devices have significant potential to accelerate machine learning for highly efficient machine vision systems.
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Affiliation(s)
- Min Ho Park
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Yeojin Kim
- R&D Management Team, DFX Group, Hyundai Mobis Technical Research Institute, Yongin 16891, Republic of Korea
| | - Min Jung Choi
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Yu Bin Kim
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jung Min Yun
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jun Hyung Jeong
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Seunghwan Kim
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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8
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Ouyang Y, Li X, Du Y, Zhang Y, Wang ZL, Wei D. Mechano-Driven Neuromimetic Logic Gates Established by Geometrically Asymmetric Hydrogel Iontronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2409998. [PMID: 40051180 DOI: 10.1002/smll.202409998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2024] [Revised: 02/26/2025] [Indexed: 04/25/2025]
Abstract
The human brain's neural network demonstrates exceptional efficiency in information processing and recognition, driving advancements in neuromimetic devices that emulate neuronal functions such as signal integration and parallel transmission. A key challenge remains in replicating these functions while minimizing energy consumption. Here, inspired by neuronal signal integration and axonal bidirectional transmission, mechano-driven hydrogel logic gates leveraging the piezoionic effect is presented, offering a novel bionic approach with significantly reduced power consumption. By exerting external force on the thick and thin sides of the geometrically asymmetric hydrogel, spike signals of differing amplitudes and opposite polarities can be generated, corresponding to '1' and '0', respectively. The differential mobility of anions and cations plays a crucial role in the piezoionic effect. This geometric asymmetry amplifies ion convection, improving force-to-electricity conversion efficiency, while the inclusion of salts with varying ion size can further enhance this disparity, even reversing the signal direction. Arranging asymmetric hydrogel iontronics in series-parallel configurations enables the emulation of complex neuronal logic operations, facilitating ionic spike signal addition and subtraction. This hydrogel-based logic control has been directly applied in human-machine interaction to control robot arms and offers significant potential for the advancement of artificial intelligence, robotics, and wearable technologies.
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Affiliation(s)
- Yaowen Ouyang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiang Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yan Du
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuyang Zhang
- Department of Material Science and Engineering, The University of Manchester, Manchester, M13 9PL, UK
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- Beijing Key Laboratory of Micro-Nano Energy and Sensor, Center for High-Entropy Energy and Systems, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Di Wei
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- Centre for Photonic Devices and Sensors, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
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9
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Chen Y, Xia J, Qu Y, Zhang H, Mei T, Zhu X, Xu G, Li D, Wang L, Liu Q, Xiao K. Ephaptic Coupling in Ultralow-Power Ion-Gel Nanofiber Artificial Synapses for Enhanced Working Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2419013. [PMID: 40059495 DOI: 10.1002/adma.202419013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2024] [Revised: 02/19/2025] [Indexed: 04/24/2025]
Abstract
Neuromorphic devices are designed to replicate the energy-efficient information processing advantages found in biological neural networks by emulating the working mechanisms of neurons and synapses. However, most existing neuromorphic devices focus primarily on functionally mimicking biological synapses, with insufficient emphasis on ion transport mechanisms. This limitation makes it challenging to achieve the complexity and connectivity inherent in biological systems, such as ephaptic coupling. Here, an ionic biomimetic synaptic device based on a flexible ion-gel nanofiber network is proposed, which transmits information and enables ephaptic coupling through capacitance formation by ion transport with an extremely low energy consumption of just 6 femtojoules. The hysteretic ion transport behavior endows the device with synaptic-like memory effects, significantly enhancing the performance of the reservoir computing system for classifying the MNIST handwritten digit dataset and demonstrating high efficiency in edge learning. More importantly, the devices in an array establish communication connections, exhibiting global oscillatory behaviors similar to ephaptic coupling in biological neural networks. This connectivity enables the array to perform working memory tasks, paving the way for developing brain-like systems characterized by high complexity and vast connectivity.
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Affiliation(s)
- Yuanxia Chen
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Junfeng Xia
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Youzhi Qu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Hongjie Zhang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Tingting Mei
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Xinyi Zhu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Guoheng Xu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Dongyang Li
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Li Wang
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
- School of Chemistry and Molecular Engineering, Nanjing Tech University, Nanjing, 211816, P.R. China
| | - Quanying Liu
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
| | - Kai Xiao
- Department of Biomedical Engineering, Guangdong Provincial Key Laboratory of Advanced Biomaterials, Institute of Innovative Materials, Southern University of Science and Technology, Shenzhen, 518055, P.R. China
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10
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Fan Q, Shang J, Yuan X, Zhang Z, Sha J. Emerging Liquid-Based Memristive Devices for Neuromorphic Computation. SMALL METHODS 2025:e2402218. [PMID: 40099617 DOI: 10.1002/smtd.202402218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2024] [Revised: 03/04/2025] [Indexed: 03/20/2025]
Abstract
To mimic the neural functions of the human brain, developing hardware with natural similarities to the human nervous system is crucial for realizing neuromorphic computing architectures. Owing to their capability to emulate artificial neurons and synapses, memristors are widely regarded as a leading candidate for achieving neuromorphic computing. However, most current memristor devices are solid-state. In contrast, biological nervous systems operate within an aqueous environment, and the human brain accomplishes intelligent behaviors such as information generation, transmission, and memory by regulating ion transport in neuronal cells. To achieve computing systems that are more analogous to biological systems and more energy-efficient, memristor devices based on liquid environments are developed. In contrast to traditional solid-state memristors, liquid-based memristors possess advantages such as anti-interference, low energy consumption, and low heat generation. Simultaneously, they demonstrate excellent biocompatibility, rendering them an ideal option for the next generation of artificial intelligence systems. Numerous experimental demonstrations of liquid-based memristors are reported, showcasing their unique memristive properties and novel neuromorphic functionalities. This review focuses on the recent developments in liquid-based memristors, discussing their operating mechanisms, structures, and functional characteristics. Additionally, the potential applications and development directions of liquid-based memristors in neuromorphic computing systems are proposed.
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Affiliation(s)
- Qinyang Fan
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 211189, China
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, China
| | - Jianyu Shang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 211189, China
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, China
| | - Xiaoxuan Yuan
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 211189, China
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, China
| | - Zhenyu Zhang
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 211189, China
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, China
| | - Jingjie Sha
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing, 211189, China
- School of Mechanical Engineering, Southeast University, Nanjing, 211189, China
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11
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Jang H, Lee J, Beak CJ, Biswas S, Lee SH, Kim H. Flexible Neuromorphic Electronics for Wearable Near-Sensor and In-Sensor Computing Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2416073. [PMID: 39828517 DOI: 10.1002/adma.202416073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2024] [Revised: 12/26/2024] [Indexed: 01/22/2025]
Abstract
Flexible neuromorphic architectures that emulate biological cognitive systems hold great promise for smart wearable electronics. To realize neuro-inspired sensing and computing electronics, artificial sensory neurons that detect and process external stimuli must be integrated with central nervous systems capable of parallel computation. In near-sensor computing, synaptic devices, and sensors are used to emulate sensory neurons and receptors, respectively. In contrast, in in-sensor computing, a single multifunctional device serves as both the receptor and neuron. Bio-inspired cognitive systems efficiently detect and process stimuli through data structuring techniques, significantly reducing data volume and enabling the extension of neuromorphic applications to smart wearable systems. To construct wearable near- and in-sensor computing, it is crucial to develop artificial sensory neurons and central nervous synapses that replicate the biological functionalities. Additionally, the integrated systems must exhibit high mechanical flexibility and integration density. This review addresses research on flexible bio-inspired cognitive systems, classified into near- and in-sensor computing. It covers fundamental aspects, including biological cognitive processes, the required components, and the structures for each component, as well as applications for wearable smart systems. Finally, it offers perspectives on future research directions for flexible neuromorphic electronics in smart wearable systems connected to the next-generation Internet of Things.
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Affiliation(s)
- Hyowon Jang
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Jihwan Lee
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Chang-Jae Beak
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Swarup Biswas
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Sin-Hyung Lee
- School of Advanced Fusion Studies, Department of Intelligent Semiconductor Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4), University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul, 02504, Republic of Korea
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12
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Wu H, Feng E, Yin H, Zhang Y, Chen G, Zhu B, Yue X, Zhang H, Liu Q, Xiong L. Biomaterials for neuroengineering: applications and challenges. Regen Biomater 2025; 12:rbae137. [PMID: 40007617 PMCID: PMC11855295 DOI: 10.1093/rb/rbae137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2024] [Revised: 10/19/2024] [Accepted: 11/03/2024] [Indexed: 02/27/2025] Open
Abstract
Neurological injuries and diseases are a leading cause of disability worldwide, underscoring the urgent need for effective therapies. Neural regaining and enhancement therapies are seen as the most promising strategies for restoring neural function, offering hope for individuals affected by these conditions. Despite their promise, the path from animal research to clinical application is fraught with challenges. Neuroengineering, particularly through the use of biomaterials, has emerged as a key field that is paving the way for innovative solutions to these challenges. It seeks to understand and treat neurological disorders, unravel the nature of consciousness, and explore the mechanisms of memory and the brain's relationship with behavior, offering solutions for neural tissue engineering, neural interfaces and targeted drug delivery systems. These biomaterials, including both natural and synthetic types, are designed to replicate the cellular environment of the brain, thereby facilitating neural repair. This review aims to provide a comprehensive overview for biomaterials in neuroengineering, highlighting their application in neural functional regaining and enhancement across both basic research and clinical practice. It covers recent developments in biomaterial-based products, including 2D to 3D bioprinted scaffolds for cell and organoid culture, brain-on-a-chip systems, biomimetic electrodes and brain-computer interfaces. It also explores artificial synapses and neural networks, discussing their applications in modeling neural microenvironments for repair and regeneration, neural modulation and manipulation and the integration of traditional Chinese medicine. This review serves as a comprehensive guide to the role of biomaterials in advancing neuroengineering solutions, providing insights into the ongoing efforts to bridge the gap between innovation and clinical application.
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Affiliation(s)
- Huanghui Wu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Enduo Feng
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Huanxin Yin
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Yuxin Zhang
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Guozhong Chen
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Beier Zhu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
| | - Xuezheng Yue
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haiguang Zhang
- Rapid Manufacturing Engineering Center, School of Mechatronical Engineering and Automation, Shanghai University, Shanghai 200444, China
- Shanghai Key Laboratory of Intelligent Manufacturing and Robotics, Shanghai University, Shanghai 200072, China
| | - Qiong Liu
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200438, China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Clinical Research Center for Anesthesiology and Perioperative Medicine, Department of Anesthesiology and Perioperative Medicine, Shanghai Fourth People’s Hospital, School of Medicine, Tongji University, Shanghai 200434, China
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13
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Wang Y, Shan W, Li H, Zhong Y, Wustoni S, Uribe J, Chang T, Musteata VE, Castillo TCH, Yue W, Ling H, El-Atab N, Inal S. An optoelectrochemical synapse based on a single-component n-type mixed conductor. Nat Commun 2025; 16:1615. [PMID: 39948373 PMCID: PMC11825661 DOI: 10.1038/s41467-025-56814-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2024] [Accepted: 01/30/2025] [Indexed: 02/16/2025] Open
Abstract
Organic mixed ionic-electronic conductors (OMIECs) are materials that can be used to build bio-inspired electronic devices as they emulate ion-based cellular communication through doping with aqueous ionic charges. The integration of charge photogeneration and electrochemical doping processes in the polymer film enables optoelectronic applications that involve synaptic transistors. However, no OMIEC has yet been implemented to create a miniaturized photoactive platform capable of perceiving and processing multi-spectral visual information. Here, we present a materials and device design concept in which an n-type OMIEC film is incorporated into the micron-scale channel of an electrochemical transistor operating directly in an aqueous electrolyte under ambient conditions. The conjugated polymer channel, consisting of a fluorinated bisistain-lactone-bithiazole acceptor, has a current modulated in response to both electrical and optical stimuli, emulating the multimodal function of the visual nervous system. Our optoelectrochemical synapse achieves multilevel conductance states as well as transduction of visual information covering ultraviolet, visible, and near-infrared regions of the spectrum - a range beyond that of the human visual system's perception. The resulting transistor active-matrix array is capable of adaptive sensing, memory, and pre-processing of visual information, demonstrating an efficient optoelectronic neuromorphic system with multi-task learning capability.
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Affiliation(s)
- Yazhou Wang
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Wentao Shan
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hanrui Li
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Zhong
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Shofarul Wustoni
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Johana Uribe
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianrui Chang
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Valentina E Musteata
- Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tania Cecilia Hidalgo Castillo
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Wan Yue
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, China
| | - Haifeng Ling
- State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Nazek El-Atab
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Sahika Inal
- Organic Bioelectronics Laboratory, Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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14
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Zhang X, Wang C, Pi X, Li B, Ding Y, Yu H, Sun J, Wang P, Chen Y, Wang Q, Zhang C, Meng X, Chen G, Wang D, Wang Z, Mu Z, Song H, Zhang J, Niu S, Han Z, Ren L. Bionic Recognition Technologies Inspired by Biological Mechanosensory Systems. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2418108. [PMID: 39838736 DOI: 10.1002/adma.202418108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2024] [Revised: 12/23/2024] [Indexed: 01/23/2025]
Abstract
Mechanical information is a medium for perceptual interaction and health monitoring of organisms or intelligent mechanical equipment, including force, vibration, sound, and flow. Researchers are increasingly deploying mechanical information recognition technologies (MIRT) that integrate information acquisition, pre-processing, and processing functions and are expected to enable advanced applications. However, this also poses significant challenges to information acquisition performance and information processing efficiency. The novel and exciting mechanosensory systems of organisms in nature have inspired us to develop superior mechanical information bionic recognition technologies (MIBRT) based on novel bionic materials, structures, and devices to address these challenges. Herein, first bionic strategies for information pre-processing are presented and their importance for high-performance information acquisition is highlighted. Subsequently, design strategies and considerations for high-performance sensors inspired by mechanoreceptors of organisms are described. Then, the design concepts of the neuromorphic devices are summarized in order to replicate the information processing functions of a biological nervous system. Additionally, the ability of MIBRT is investigated to recognize basic mechanical information. Furthermore, further potential applications of MIBRT in intelligent robots, healthcare, and virtual reality are explored with a view to solve a range of complex tasks. Finally, potential future challenges and opportunities for MIBRT are identified from multiple perspectives.
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Affiliation(s)
- Xiangxiang Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changguang Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiang Pi
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Bo Li
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
| | - Yuechun Ding
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Hexuan Yu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Jialue Sun
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Pinkun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - You Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Qun Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Changchao Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Xiancun Meng
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Guangjun Chen
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Dakai Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Ze Wang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Zhengzhi Mu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Honglie Song
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
| | - Junqiu Zhang
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Shichao Niu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Zhiwu Han
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
| | - Luquan Ren
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, Jilin, 130022, China
- The National Key Laboratory of Automotive Chassis Integration and Bionics (ACIB), College of Biological and Agricultural Engineering, Jilin University, Changchun, 130022, China
- Institute of Structured and Architected Materials, Liaoning Academy of Materials, Shenyang, 110167, China
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15
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Huang H, Liang X, Wang Y, Tang J, Li Y, Du Y, Sun W, Zhang J, Yao P, Mou X, Xu F, Zhang J, Lu Y, Liu Z, Wang J, Jiang Z, Hu R, Wang Z, Zhang Q, Gao B, Bai X, Fang L, Dai Q, Yin H, Qian H, Wu H. Fully integrated multi-mode optoelectronic memristor array for diversified in-sensor computing. NATURE NANOTECHNOLOGY 2025; 20:93-103. [PMID: 39516386 DOI: 10.1038/s41565-024-01794-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 08/26/2024] [Indexed: 11/16/2024]
Abstract
In-sensor computing, which integrates sensing, memory and processing functions, has shown substantial potential in artificial vision systems. However, large-scale monolithic integration of in-sensor computing based on emerging devices with complementary metal-oxide-semiconductor (CMOS) circuits remains challenging, lacking functional demonstrations at the hardware level. Here we report a fully integrated 1-kb array with 128 × 8 one-transistor one-optoelectronic memristor (OEM) cells and silicon CMOS circuits, which features configurable multi-mode functionality encompassing three different modes of electronic memristor, dynamic OEM and non-volatile OEM (NV-OEM). These modes are configured by modulating the charge density within the oxygen vacancies via synergistic optical and electrical operations, as confirmed by differential phase-contrast scanning transmission electron microscopy. Using this OEM system, three visual processing tasks are demonstrated: image sensory pre-processing with a recognition accuracy enhanced from 85.7% to 96.1% by the NV-OEM mode, more advanced object tracking with 96.1% accuracy using both dynamic OEM and NV-OEM modes and human motion recognition with a fully OEM-based in-sensor reservoir computing system achieving 91.2% accuracy. A system-level benchmark further shows that it consumes over 20 times less energy than graphics processing units. By monolithically integrating the multi-functional OEMs with Si CMOS, this work provides a cost-effective platform for diverse in-sensor computing applications.
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Affiliation(s)
- Heyi Huang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
- Integrated Circuit Advanced Process R&D Center and Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China
| | - Xiangpeng Liang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Yuyan Wang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China.
| | - Jianshi Tang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China.
| | - Yuankun Li
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Yiwei Du
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Wen Sun
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Jianing Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing, China
| | - Peng Yao
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Xing Mou
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Feng Xu
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Jinzhi Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing, China
| | - Yuyao Lu
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Zhengwu Liu
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Jianlin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Zhixing Jiang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Ruofei Hu
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Ze Wang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Qingtian Zhang
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Bin Gao
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Lu Fang
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
- Department of Electronic Engineering, Tsinghua University, Beijing, China
| | - Qionghai Dai
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China
| | - Huaxiang Yin
- Integrated Circuit Advanced Process R&D Center and Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China
| | - He Qian
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China
| | - Huaqiang Wu
- School of Integrated Circuits, Beijing Innovation Center for Integrated Circuits, Tsinghua University, Beijing, China.
- Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, China.
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16
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Boahen EK, Kweon H, Oh H, Kim JH, Lim H, Kim DH. Bio-Inspired Neuromorphic Sensory Systems from Intelligent Perception to Nervetronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2025; 12:e2409568. [PMID: 39527666 PMCID: PMC11714237 DOI: 10.1002/advs.202409568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2024] [Revised: 10/30/2024] [Indexed: 11/16/2024]
Abstract
Inspired by the extensive signal processing capabilities of the human nervous system, neuromorphic artificial sensory systems have emerged as a pivotal technology in advancing brain-like computing for applications in humanoid robotics, prosthetics, and wearable technologies. These systems mimic the functionalities of the central and peripheral nervous systems through the integration of sensory synaptic devices and neural network algorithms, enabling external stimuli to be converted into actionable electrical signals. This review delves into the intricate relationship between synaptic device technologies and neural network processing algorithms, highlighting their mutual influence on artificial intelligence capabilities. This study explores the latest advancements in artificial synaptic properties triggered by various stimuli, including optical, auditory, mechanical, and chemical inputs, and their subsequent processing through artificial neural networks for applications in image recognition and multimodal pattern recognition. The discussion extends to the emulation of biological perception via artificial synapses and concludes with future perspectives and challenges in neuromorphic system development, emphasizing the need for a deeper understanding of neural network processing to innovate and refine these complex systems.
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Affiliation(s)
- Elvis K. Boahen
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Hyukmin Kweon
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
- Present address:
Department of Chemical EngineeringStanford UniversityStanfordCA94305USA
| | - Hayoung Oh
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Ji Hong Kim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Hayoung Lim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Do Hwan Kim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
- Institute of Nano Science and TechnologyHanyang UniversitySeoul04763Republic of Korea
- Clean‐Energy Research InstituteHanyang UniversitySeoul04763Republic of Korea
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17
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Li P, Feder‐Kubis J, Kunigkeit J, Zielińska‐Błajet M, Brunner E, Grothe J, Kaskel S. Bioactive Ion-Confined Ultracapacitive Memristors with Neuromorphic Functions. Angew Chem Int Ed Engl 2024; 63:e202412674. [PMID: 39292967 PMCID: PMC11627131 DOI: 10.1002/anie.202412674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2024] [Revised: 08/28/2024] [Accepted: 09/04/2024] [Indexed: 09/20/2024]
Abstract
The field of bioinspired iontronics, bridging electronic devices and ionic systems, has multiple biological applications. Carbon-based ultracapacitive devices hold promise for controlling bioactive ions via electric double layers due to their high-surface-area and biocompatible porous carbon electrodes. However, the interplay between complex bioactive ions and porous carbons remains unclear due to the variety of structures of bioactive ions present in biological systems. Herein, we investigate the adsorption behavior of a series of bioactive ammonium-based cations with varying alkyl chain lengths in nanoporous carbons. We find that strong physisorption results from the synergistic hydrophobic interaction and electrostatic attraction between porous carbons (with a negative zeta potential) and bioactive cations. Bioactive cations with varying alkyl chain lengths can be irreversibly physically adsorbed and confined within nanoporous carbons resulting in anion enrichment and depletion during electric polarization. This situation, in turn, results in a characteristic memristive behavior in all-carbon capacitive ionic memristor devices. Our findings highlight the relationship between the resistance state of the memristor and ion adsorption mechanisms in all-carbon capacitive devices, which hold potential for future transmitter delivery, biointerfacing, and neuromorphic devices.
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Affiliation(s)
- Panlong Li
- Inorganic Chemistry Center ITechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Joanna Feder‐Kubis
- Inorganic Chemistry Center ITechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Faculty of ChemistryWrocław University of Science and TechnologyWybrzeże Wyspiańskiego 27Wrocław50-370Poland
| | - Jonas Kunigkeit
- Bioanalytical ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Mariola Zielińska‐Błajet
- Faculty of ChemistryWrocław University of Science and TechnologyWybrzeże Wyspiańskiego 27Wrocław50-370Poland
| | - Eike Brunner
- Bioanalytical ChemistryTechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Julia Grothe
- Inorganic Chemistry Center ITechnische Universität DresdenBergstrasse 6601069DresdenGermany
| | - Stefan Kaskel
- Inorganic Chemistry Center ITechnische Universität DresdenBergstrasse 6601069DresdenGermany
- Fraunhofer IWSWinterbergstrasse 2801277DresdenGermany
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18
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Ding G, Li H, Zhao J, Zhou K, Zhai Y, Lv Z, Zhang M, Yan Y, Han ST, Zhou Y. Nanomaterials for Flexible Neuromorphics. Chem Rev 2024; 124:12738-12843. [PMID: 39499851 DOI: 10.1021/acs.chemrev.4c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2024]
Abstract
The quest to imbue machines with intelligence akin to that of humans, through the development of adaptable neuromorphic devices and the creation of artificial neural systems, has long stood as a pivotal goal in both scientific inquiry and industrial advancement. Recent advancements in flexible neuromorphic electronics primarily rely on nanomaterials and polymers owing to their inherent uniformity, superior mechanical and electrical capabilities, and versatile functionalities. However, this field is still in its nascent stage, necessitating continuous efforts in materials innovation and device/system design. Therefore, it is imperative to conduct an extensive and comprehensive analysis to summarize current progress. This review highlights the advancements and applications of flexible neuromorphics, involving inorganic nanomaterials (zero-/one-/two-dimensional, and heterostructure), carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene, and polymers. Additionally, a comprehensive comparison and summary of the structural compositions, design strategies, key performance, and significant applications of these devices are provided. Furthermore, the challenges and future directions pertaining to materials/devices/systems associated with flexible neuromorphics are also addressed. The aim of this review is to shed light on the rapidly growing field of flexible neuromorphics, attract experts from diverse disciplines (e.g., electronics, materials science, neurobiology), and foster further innovation for its accelerated development.
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Affiliation(s)
- Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, PR China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, PR China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom 999077, Hong Kong SAR PR China
| | - Ye Zhou
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, PR China
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, PR China
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19
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Zheng Z, Zhu R, Peng I, Xu Z, Jiang Y. Wearable and implantable biosensors: mechanisms and applications in closed-loop therapeutic systems. J Mater Chem B 2024; 12:8577-8604. [PMID: 39138981 DOI: 10.1039/d4tb00782d] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
This review article examines the current state of wearable and implantable biosensors, offering an overview of their biosensing mechanisms and applications. We also delve into integrating these biosensors with therapeutic systems, discussing their operational principles and incorporation into closed-loop devices. Biosensing strategies are broadly categorized into chemical sensing for biomarker detection, physical sensing for monitoring physiological conditions such as pressure and temperature, and electrophysiological sensing for capturing bioelectrical activities. The discussion extends to recent developments in drug delivery and electrical stimulation devices to highlight their significant role in closed-loop therapy. By integrating with therapeutic devices, biosensors enable the modulation of treatment regimens based on real-time physiological data. This capability enhances the patient-specificity of medical interventions, an essential aspect of personalized healthcare. Recent innovations in integrating biosensors and therapeutic devices have led to the introduction of closed-loop wearable and implantable systems capable of achieving previously unattainable therapeutic outcomes. These technologies represent a significant leap towards dynamic, adaptive therapies that respond in real-time to patients' physiological states, offering a level of accuracy and effectiveness that is particularly beneficial for managing chronic conditions. This review also addresses the challenges associated with biosensor technologies. We also explore the prospects of these technologies to address their potential to transform disease management with more targeted and personalized treatment solutions.
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Affiliation(s)
- Zeyuan Zheng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
| | - Runjin Zhu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
| | - Ian Peng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
| | - Zitong Xu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
| | - Yuanwen Jiang
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
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20
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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21
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Chen L, Ren M, Zhou J, Zhou X, Liu F, Di J, Xue P, Li C, Li Q, Li Y, Wei L, Zhang Q. Bioinspired iontronic synapse fibers for ultralow-power multiplexing neuromorphic sensorimotor textiles. Proc Natl Acad Sci U S A 2024; 121:e2407971121. [PMID: 39110725 PMCID: PMC11331142 DOI: 10.1073/pnas.2407971121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 06/27/2024] [Indexed: 08/21/2024] Open
Abstract
Artificial neuromorphic devices can emulate dendric integration, axonal parallel transmission, along with superior energy efficiency in facilitating efficient information processing, offering enormous potential for wearable electronics. However, integrating such circuits into textiles to achieve biomimetic information perception, processing, and control motion feedback remains a formidable challenge. Here, we engineer a quasi-solid-state iontronic synapse fiber (ISF) comprising photoresponsive TiO2, ion storage Co-MoS2, and an ion transport layer. The resulting ISF achieves inherent short-term synaptic plasticity, femtojoule-range energy consumption, and the ability to transduce chemical/optical signals. Multiple ISFs are interwoven into a synthetic neural fabric, allowing the simultaneous propagation of distinct optical signals for transmitting parallel information. Importantly, IFSs with multiple input electrodes exhibit spatiotemporal information integration. As a proof of concept, a textile-based multiplexing neuromorphic sensorimotor system is constructed to connect synaptic fibers with artificial fiber muscles, enabling preneuronal sensing information integration, parallel transmission, and postneuronal information output to control the coordinated motor of fiber muscles. The proposed fiber system holds enormous promise in wearable electronics, soft robotics, and biomedical engineering.
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Affiliation(s)
- Long Chen
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Ming Ren
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Jianxian Zhou
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Fan Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Jiangtao Di
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Pan Xue
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou225002, China
| | - Chunsheng Li
- School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou215009, China
| | - Qingwen Li
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Yang Li
- School of Microelectronics, Shandong University, Jinan250101, China
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Qichong Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
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22
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Dong L, Xue B, Wei G, Yuan S, Chen M, Liu Y, Su Y, Niu Y, Xu B, Wang P. Highly Promising 2D/1D BP-C/CNT Bionic Opto-Olfactory Co-Sensory Artificial Synapses for Multisensory Integration. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403665. [PMID: 38828870 PMCID: PMC11304314 DOI: 10.1002/advs.202403665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/08/2024] [Indexed: 06/05/2024]
Abstract
The development of high-performance artificial synaptic neuromorphic devices poses a significant challenge in the creation of biomimetic sensing neural systems that seamlessly integrate both sensory and computational functionalities. In pursuit of this objective, promising bionic opto-olfactory co-sensory artificial synapse devices are constructed utilizing the BP-C/CNT (2D/1D) hybrid filter membrane as the resistive layer. Experimental results demonstrated that the devices seamlessly integrated the light modulation, gas detection, and biological synaptic functions into a single device while addressing the challenge with separating artificial synaptic devices from sensors. These devices offered the following advantages: 1) Simulating visual synapses, they can effectively replicate fundamental synaptic functions under both electrical and optical stimulation. 2) By emulating olfactory synapse responses to specific gases, they can achieve ultra-low detection limits and rapid identification of ethanol and acetone gases. 3) They enable photo-olfactory co-sensing simulations that mimic synaptic function under light-modulated pulse conditions in distinct gas environments, facilitating the study of synaptic learning rules and Pavlovian responses. This work provides a pioneering approach for exploring highly stable 2D BP-based optoelectronics and advancing the development of biomimetic neural systems.
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Affiliation(s)
- Liyan Dong
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Baojing Xue
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Guodong Wei
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
- Shanxi‐Zheda Institute of Advanced Materials and Chemical EngineeringTaiyuan030024P. R. China
| | - Shuai Yuan
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Mi Chen
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Yue Liu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Ying Su
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Yong Niu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
| | - Bingshe Xu
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
- Shanxi‐Zheda Institute of Advanced Materials and Chemical EngineeringTaiyuan030024P. R. China
| | - Pan Wang
- Xi 'an Key Laboratory of Compound Semiconductor Materials and DevicesSchool of Physics & Information ScienceShaanxi University of Science and TechnologyXi'an710021P. R. China
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23
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Tsutsui M, Hsu WL, Garoli D, Leong IW, Yokota K, Daiguji H, Kawai T. Gate-All-Around Nanopore Osmotic Power Generators. ACS NANO 2024; 18:15046-15054. [PMID: 38804145 DOI: 10.1021/acsnano.4c01989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Nanofluidic channels in a membrane represent a promising avenue for harnessing blue energy from salinity gradients, relying on permselectivity as a pivotal characteristic crucial for inducing electricity through diffusive ion transport. Surface charge emerges as a central player in the osmotic energy conversion process, emphasizing the critical significance of a judicious selection of membrane materials to achieve optimal ion permeability and selectivity within specific channel dimensions. Alternatively, here we report a field-effect approach for in situ manipulation of the ion selectivity in a nanopore. Application of voltage to a surround-gate electrode allows precise adjustment of the surface charge density at the pore wall. Leveraging the gating control, we demonstrate permselectivity turnover to enhanced cation selective transport in multipore membranes, resulting in a 6-fold increase in the energy conversion efficiency with a power density of 15 W/m2 under a salinity gradient. These findings not only advance our fundamental understanding of ion transport in nanochannels but also provide a scalable and efficient strategy for nanoporous membrane osmotic power generation.
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Affiliation(s)
- Makusu Tsutsui
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 5267-0047, Japan
| | - Wei-Lun Hsu
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Denis Garoli
- Optoelectronics Research Line, Instituto Italiano di Tecnologia, Morego 30, I-16163 Genova, Italy
| | - Iat Wai Leong
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 5267-0047, Japan
| | - Kazumichi Yokota
- National Institute of Advanced Industrial Science and Technology, Takamatsu, Kagawa 761-0395, Japan
| | - Hirofumi Daiguji
- Department of Mechanical Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Tomoji Kawai
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 5267-0047, Japan
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24
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Motaman S, Ghafouri T, Manavizadeh N. Low power nanoscale S-FED based single ended sense amplifier applied in integrate and fire neuron circuit. Sci Rep 2024; 14:10691. [PMID: 38724680 PMCID: PMC11082184 DOI: 10.1038/s41598-024-61224-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 05/02/2024] [Indexed: 05/12/2024] Open
Abstract
Current advancements in neuromorphic computing systems are focused on decreasing power consumption and enriching computational functions. Correspondingly, state-of-the-art system-on-chip developers are encouraged to design nanoscale devices with minimum power dissipation and high-speed operation. This paper deals with designing a sense amplifier based on side-contacted field-effect diodes to reduce the power-delay product (PDP) and the noise susceptibility, as critical factors in neuron circuits. Our findings reveal that both static and dynamic power consumption of the S-FED-based sense amplifier, equal to 1.86 μW and 1.92 fW/GHz, are × 243.03 and × 332.83 lower than those of the conventional CMOS counterpart, respectively. While the sense-amplifier circuit based on CMOS technology undergoes an output voltage deviation of 170.97 mV, the proposed S-FED-based one enjoys a minor output deviation of 27.31 mV. Meanwhile, the superior HIGH-level and LOW-level noise margins of the S-FED-based sense amplifier to the CMOS counterparts (∆NMH = 70 mV and ∆NML = 120 mV), respectively, can ensure the system-level operation stability of the former one. Subsequent to the attainment of an area-efficient, low-power, and high-speed S-FED-based sense amplifier (PDP = 187.75 × 10-18 W s) as a fundamental building block, devising an innovative integrate-and-fire neuron circuit based on S-FED paves the way to realize a new generation of neuromorphic architectures. To shed light on this context, an S-FED-based integrate-and-fire neuron circuit is designed and analyzed utilizing a sense amplifier and feedback loop to enhance spiking voltage and subsequent noise immunity in addition to an about fourfold increase in firing frequency compared to CMOS-based ones.
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Affiliation(s)
- SeyedMohamadJavad Motaman
- Nanostructured-Electronic Devices Laboratory, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, 1631714191, Iran
| | - Tara Ghafouri
- Nanostructured-Electronic Devices Laboratory, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, 1631714191, Iran
| | - Negin Manavizadeh
- Nanostructured-Electronic Devices Laboratory, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Tehran, 1631714191, Iran.
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25
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Liu X, Dai S, Zhao W, Zhang J, Guo Z, Wu Y, Xu Y, Sun T, Li L, Guo P, Yang J, Hu H, Zhou J, Zhou P, Huang J. All-Photolithography Fabrication of Ion-Gated Flexible Organic Transistor Array for Multimode Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312473. [PMID: 38385598 DOI: 10.1002/adma.202312473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 02/17/2024] [Indexed: 02/23/2024]
Abstract
Organic ion-gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all-photolithography methods for scalable manufacturing of high-density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high-density. Here, a flexible high-density (9662 devices per cm2) OIGT array with high yield and minimal device-to-device variation is fabricated by a modified all-photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects.
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Affiliation(s)
- Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Shilei Dai
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Weidong Zhao
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yue Wu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Pu Guo
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Jie Yang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Huawei Hu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, P. R. China
| | - Junhe Zhou
- School of Electronic and Information Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- National Key Laboratory of Autonomous Intelligent Unmanned Systems, Tongji University, Shanghai, 201804, P. R. China
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26
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Yang C, Wang H, Cao Z, Chen X, Zhou G, Zhao H, Wu Z, Zhao Y, Sun B. Memristor-Based Bionic Tactile Devices: Opening the Door for Next-Generation Artificial Intelligence. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308918. [PMID: 38149504 DOI: 10.1002/smll.202308918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 11/13/2023] [Indexed: 12/28/2023]
Abstract
Bioinspired tactile devices can effectively mimic and reproduce the functions of the human tactile system, presenting significant potential in the field of next-generation wearable electronics. In particular, memristor-based bionic tactile devices have attracted considerable attention due to their exceptional characteristics of high flexibility, low power consumption, and adaptability. These devices provide advanced wearability and high-precision tactile sensing capabilities, thus emerging as an important research area within bioinspired electronics. This paper delves into the integration of memristors with other sensing and controlling systems and offers a comprehensive analysis of the recent research advancements in memristor-based bionic tactile devices. These advancements incorporate artificial nociceptors and flexible electronic skin (e-skin) into the category of bio-inspired sensors equipped with capabilities for sensing, processing, and responding to stimuli, which are expected to catalyze revolutionary changes in human-computer interaction. Finally, this review discusses the challenges faced by memristor-based bionic tactile devices in terms of material selection, structural design, and sensor signal processing for the development of artificial intelligence. Additionally, it also outlines future research directions and application prospects of these devices, while proposing feasible solutions to address the identified challenges.
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Affiliation(s)
- Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
| | - Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Xiaoliang Chen
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing, 400715, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Zhenhua Wu
- School of Mechanical Engineering, Shanghai Jiao Tong University, 800 DongChuan Rd, Shanghai, 200240, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian, 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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27
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R RK, Kalaboukhov A, Weng YC, Rathod KN, Johansson T, Lindblad A, Kamalakar MV, Sarkar T. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19225-19234. [PMID: 38579143 DOI: 10.1021/acsami.4c01501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/07/2024]
Abstract
Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe2O4 (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, for the first time. Using pulsed laser deposition in a controlled oxygen atmosphere, we tune the oxygen vacancies together with the cationic valence state in the nickel ferrite phase, with the latter directly affecting the charge state of the oxygen vacancies. The structural integrity and chemical composition of the films are confirmed by X-ray diffraction and hard X-ray photoelectron spectroscopy, respectively. Electrical transport studies reveal that resistive switching characteristics in the films can be significantly altered by tuning the amount and charge state of the oxygen vacancy concentration during the deposition of the films. The resistive switching mechanism is seen to depend upon the migration of both singly and doubly charged oxygen vacancies formed as a result of changes in the nickel valence state and the consequent formation/rupture of conducting filaments in the switching layer. This is supported by the existence of an optimum oxygen vacancy concentration for efficient low-voltage resistive switching, below or above which the switching process is inhibited. Along with the filamentary switching mechanism, the Ti top electrode also enhances the resistive switching performance due to interfacial effects. Time-resolved measurements on the devices display both long- and short-term potentiation in the optimized vacancy-engineered NFO resistive switches, ideal for solid-state synapses achieved in a single system. Our work on correlated oxide forming-free resistive switches holds significant potential for CMOS-compatible low-power, nonvolatile resistive memory and neuromorphic circuits.
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Affiliation(s)
- Rajesh Kumar R
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Uppsala SE-751 03, Sweden
| | - Alexei Kalaboukhov
- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg SE-412 96, Sweden
| | - Yi-Chen Weng
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - K N Rathod
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Uppsala SE-751 03, Sweden
| | - Ted Johansson
- Division of Solid-State Electronics, Department of Electrical Engineering, Uppsala University, Uppsala SE-751 21, Sweden
| | - Andreas Lindblad
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - M Venkata Kamalakar
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - Tapati Sarkar
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Uppsala SE-751 03, Sweden
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28
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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29
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Bag SP, Lee S, Song J, Kim J. Hydrogel-Gated FETs in Neuromorphic Computing to Mimic Biological Signal: A Review. BIOSENSORS 2024; 14:150. [PMID: 38534257 DOI: 10.3390/bios14030150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 03/13/2024] [Accepted: 03/13/2024] [Indexed: 03/28/2024]
Abstract
Hydrogel-gated synaptic transistors offer unique advantages, including biocompatibility, tunable electrical properties, being biodegradable, and having an ability to mimic biological synaptic plasticity. For processing massive data with ultralow power consumption due to high parallelism and human brain-like processing abilities, synaptic transistors have been widely considered for replacing von Neumann architecture-based traditional computers due to the parting of memory and control units. The crucial components mimic the complex biological signal, synaptic, and sensing systems. Hydrogel, as a gate dielectric, is the key factor for ionotropic devices owing to the excellent stability, ultra-high linearity, and extremely low operating voltage of the biodegradable and biocompatible polymers. Moreover, hydrogel exhibits ionotronic functions through a hybrid circuit of mobile ions and mobile electrons that can easily interface between machines and humans. To determine the high-efficiency neuromorphic chips, the development of synaptic devices based on organic field effect transistors (OFETs) with ultra-low power dissipation and very large-scale integration, including bio-friendly devices, is needed. This review highlights the latest advancements in neuromorphic computing by exploring synaptic transistor developments. Here, we focus on hydrogel-based ionic-gated three-terminal (3T) synaptic devices, their essential components, and their working principle, and summarize the essential neurodegenerative applications published recently. In addition, because hydrogel-gated FETs are the crucial members of neuromorphic devices in terms of cutting-edge synaptic progress and performances, the review will also summarize the biodegradable and biocompatible polymers with which such devices can be implemented. It is expected that neuromorphic devices might provide potential solutions for the future generation of interactive sensation, memory, and computation to facilitate the development of multimodal, large-scale, ultralow-power intelligent systems.
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Affiliation(s)
- Sankar Prasad Bag
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Suyoung Lee
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Jaeyoon Song
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
| | - Jinsink Kim
- Department of Biomedical Engineering, College of Life Science and Biotechnology, Dongguk University, Seoul 04620, Republic of Korea
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30
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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31
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Xu Y, Liu D, Dai S, Zhang J, Guo Z, Liu X, Xiong L, Huang J. Stretchable and neuromorphic transistors for pain perception and sensitization emulation. MATERIALS HORIZONS 2024; 11:958-968. [PMID: 38099601 DOI: 10.1039/d3mh01766d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2024]
Abstract
Pain perception nociceptors (PPN), an important type of sensory neuron, are capable of sending out alarm signals when the human body is exposed to destructive stimuli. Simulating the human ability to perceive the external environment and spontaneously avoid injury is a critical function of neural sensing of artificial intelligence devices. The demand for developing artificial PPN has subsequently increased. However, due to the application scenarios of bionic electronic devices such as human skin, electronic prostheses, and robot bodies, where a certain degree of surface deformation constantly occurs, the ideal artificial PPN should have the stretchability to adapt to real scenarios. Here, an organic semiconductor nanofiber artificial pain perception nociceptor (NAPPN) based on a pre-stretching strategy is demonstrated to achieve key pain aspects such as threshold, sensitization, and desensitization. Remarkably, while stretching up to 50%, the synaptic behaviors and injury warning ability of NAPPN can be retained. To verify the wearability of the device, NAPPN was attached to a curved human finger joint, on which PPN behaviors were successfully mimicked. This provides a promising strategy for realizing neural sensing function on either deformed or mobile electronic devices.
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Affiliation(s)
- Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Dapeng Liu
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Shilei Dai
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Ziyi Guo
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Xu Liu
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China.
| | - Jia Huang
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China.
- School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
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32
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Lee Y, So JH, Koo HJ. A Transparent Hydrogel-Ionic Conductor with High Water Retention and Self-Healing Ability. MATERIALS (BASEL, SWITZERLAND) 2024; 17:288. [PMID: 38255457 PMCID: PMC10817594 DOI: 10.3390/ma17020288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 01/04/2024] [Accepted: 01/04/2024] [Indexed: 01/24/2024]
Abstract
This study presents a transparent and ion-conductive hydrogel with suppressed water loss. The hydrogel comprises agarose polymer doped with sucrose and sodium chloride salt (NaCl-Suc/A hydrogel). Sucrose increases the water retention of the agarose gel, and the Na and Cl ions dissolved in the gel provide ionic conductivity. The NaCl-Suc/A gel shows high retention capability and maintains a 45% water uptake after 4 h of drying at 60 °C without encapsulation at the optimum gel composition. The doped NaCl-Suc/A hydrogel demonstrates improved mechanical properties and ionic conductivity of 1.6 × 10-2 (S/cm) compared to the pristine agarose hydrogel. The self-healing property of the gel restores the electrical continuity when reassembled after cutting. Finally, to demonstrate a potential application of the ion-conductive hydrogel, a transparent and flexible pressure sensor is fabricated using the NaCl-Suc/A hydrogel, and its performance is demonstrated. The results of this study could contribute to solving problems with hydrogel-based devices such as rapid dehydration and poor mechanical properties.
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Affiliation(s)
- Yangwoo Lee
- Department of Chemical & Biomolecular Engineering, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of Korea;
| | - Ju-Hee So
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology, Ansan 15588, Republic of Korea
| | - Hyung-Jun Koo
- Department of Chemical & Biomolecular Engineering, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Republic of Korea;
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33
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Liu D, Zhang J, Shi Q, Sun T, Xu Y, Li L, Tian L, Xiong L, Zhang J, Huang J. Humidity/Oxygen-Insensitive Organic Synaptic Transistors Based on Optical Radical Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305370. [PMID: 37506027 DOI: 10.1002/adma.202305370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/15/2023] [Indexed: 07/30/2023]
Abstract
For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions lead to significantly different device performance. Some devices even lose the synaptic responses under vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen levels can be a challenge. Herein, a moisture- and oxygen-insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules is reported. Unlike the widely reported charge trapping effect, the photoinduced free radical is utilized to realize the photosynaptic performance. The resulting synaptic transistor displays typical excitatory postsynaptic current, paired-pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photosynaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast-enhanced capability of the device is successfully validated by the single-layer-perceptron/double-layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next-generation environment-stable organic synaptic devices and systems.
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Affiliation(s)
- Dapeng Liu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Junyao Zhang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Qianqian Shi
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Tongrui Sun
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Yutong Xu
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Li
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Li Tian
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Lize Xiong
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Jia Huang
- School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Key Laboratory of Anesthesiology and Brain Functional Modulation, Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Tongji University, Shanghai, 200434, P. R. China
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34
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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