In Situ Exfoliation Method of Large-Area 2D Materials

Recent Advances in Xenes Based FET for Biosensing Applications

In recent years, monoelemental 2D materials (Xenes) such as graphene, graphdiyne, silicene, phosphorene, and tellurene, have gained significant traction in biosensing applications. Owing to their ultra-thin layered structure, exceptionally high specific surface area, unique surface electronic properties, excellent mechanical strength, flexibility, and other distinctive features, Xenes are recognized for their potential as materials with low detection limits, high speed, and exceptional flexibility in biosensing applications. In this review, the unique properties of Xenes, their synthesis, and recent theoretical and experimental advances in applications related to biosensing, including DNA/RNA biosensors, protein biosensors, small molecule biosensors, cell, and ion biosensors are comprehensively summarized. Finally, the challenges and prospects of this emerging field are discussed.

Radio frequency switching devices based on two-dimensional materials for high-speed communication applications

Two-dimensional (2D) materials, with their atomic-scale thickness, high carrier mobility, tunable wide bandgap, and excellent electrical and mechanical properties, have demonstrated vast application prospects in research on radio frequency (RF) switch devices. This review summarizes the recent advances in 2D materials for RF switch applications, focusing on the performance and mechanisms of 2D material-based RF switch devices at high frequencies, wide bandwidths, and high transmission rates. The analysis includes the design and optimization of devices based on graphene, transition metal dichalcogenides, hexagonal boron nitride, and their heterojunctions. By comparing the key performance parameters such as insertion loss, isolation, and cutoff frequency of the switches, this review reveals the influence of material selection, structural design, and defect control on device performance. Furthermore, it discusses the challenges of 2D material-based RF switches in practical applications, including material defect control, reduction of contact resistance, and the technical bottlenecks of large-scale industrial production. Finally, this review envisions future research directions, proposing potential pathways for improving device performance through heterojunction structure design, multifunctional integration, and process optimization. This study is of great significance for advancing the development of high-performance RF switches and the application of communication technologies in 6G and higher frequency bands.

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Gold-assisted exfoliation (GAE) is a groundbreaking mechanical exfoliation technique that produces centimeter-scale single-crystal monolayers of 2D materials. Such large, high-quality films offer unparalleled advantages over the micron-sized flakes typically produced by conventional exfoliation techniques, significantly accelerating the research and technological advancements in the field of 2D materials. Despite its wide applications, the fundamental mechanism of GAE remains poorly understood. In this study, using MoS₂ on Au as a model system, ultra-low frequency Raman spectroscopy is employed to elucidate how the interlayer interactions within MoS2 crystals are impacted by the gold substrate. The results reveal that the coupling at the first MoS2-MoS2 interface between the adhered layer on the gold substrate and the adjacent layer is substantially weakened, with the binding force being reduced to nearly zero. This renders the first interface the weakest point in the system, thereby the crystal preferentially cleaves at this junction, generating large-area monolayers with sizes comparable to the parent crystal. Biaxial strain in the adhered layer, induced by the gold substrate, is identified as the driving factor for the decoupling effect. The strain-induced decoupling effect is established as the primary mechanism of GAE, which can also play a significant role in general mechanical exfoliations.

Two-Dimensional Materials for Brain-Inspired Computing Hardware

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security to healthcare. However, the current strategy of implementing artificial intelligence algorithms using conventional silicon hardware is leading to unsustainable energy consumption. Neuromorphic hardware based on electronic devices mimicking biological systems is emerging as a low-energy alternative, although further progress requires materials that can mimic biological function while maintaining scalability and speed. As a result of their diverse unique properties, atomically thin two-dimensional (2D) materials are promising building blocks for next-generation electronics including nonvolatile memory, in-memory and neuromorphic computing, and flexible edge-computing systems. Furthermore, 2D materials achieve biorealistic synaptic and neuronal responses that extend beyond conventional logic and memory systems. Here, we provide a comprehensive review of the growth, fabrication, and integration of 2D materials and van der Waals heterojunctions for neuromorphic electronic and optoelectronic devices, circuits, and systems. For each case, the relationship between physical properties and device responses is emphasized followed by a critical comparison of technologies for different applications. We conclude with a forward-looking perspective on the key remaining challenges and opportunities for neuromorphic applications that leverage the fundamental properties of 2D materials and heterojunctions.

Local Strain Engineering of Two-Dimensional Transition Metal Dichalcogenides Towards Quantum Emitters

Two-dimensional transition metal dichalcogenides (2D TMDCs) have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility, electonic structure, and optical properties. The strain-induced out-of-plane deformations in 2D TMDCs lead to diverse excitonic behaviors and versatile modulations in optical properties, paving the way for the development of advanced quantum technologies, flexible optoelectronic materials, and straintronic devices. Research on local strain engineering on 2D TMDCs has been delved into fabrication techniques, electronic state variations, and quantum optical applications. This review begins by summarizing the state-of-the-art methods for introducing local strain into 2D TMDCs, followed by an exploration of the impact of local strain engineering on optical properties. The intriguing phenomena resulting from local strain, such as exciton funnelling and anti-funnelling, are also discussed. We then shift the focus to the application of locally strained 2D TMDCs as quantum emitters, with various strategies outlined for modulating the properties of TMDC-based quantum emitters. Finally, we discuss the remaining questions in this field and provide an outlook on the future of local strain engineering on 2D TMDCs.

Exfoliation of Graphene onto Si(111)-7 × 7 under Ultrahigh Vacuum Provides Some Protection against Exposure to Air

The investigation of graphene as a protective coating for different materials has been an area of active research for well over a decade. However, graphene's ability to protect clean, reconstructed silicon from ambient gases has remained uninvestigated. Here, we describe the use of a clean ultrahigh vacuum transfer method to deposit graphene onto the Si(111)-7 × 7 reconstruction. Using a combination of X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM), we confirmed the successful transfer of graphene onto the surface. We then exposed the graphene-protected surface to 120 L of ambient air in the vacuum chamber and found that although the reconstruction is destroyed on unprotected terraces, clean and ordered silicon can be imaged through the transferred graphene. Exposing the sample to ambient air at atmospheric pressure for 2 days produces a strong signature of oxidation in XPS, and STM images revealed that although graphene can still be identified, the regions beneath the graphene appear amorphous. This work demonstrates that graphene provides some protection against the oxidation of Si(111)-7 × 7 by air, but that this protective ability is not sufficient to forestall oxidation during prolonged exposure to atmospheric conditions.

Controlling Gold-Assisted Exfoliation of Large-Area MoS2 Monolayers with External Pressure

Gold-assisted exfoliation can fabricate centimeter- or larger-sized monolayers of van der Waals (vdW) semiconductors, which is desirable for their applications in electronic and optoelectronic devices. However, there is still a lack of control over the exfoliation processes and a limited understanding of the atomic-scale mechanisms. Here, we tune the MoS2-Au interface using controlled external pressure and reveal two atomic-scale prerequisites for successfully producing large-area monolayers of MoS2. The first is the formation of strong MoS2-Au interactions to anchor the top MoS2 monolayer to the Au surface. The second is the integrity of the covalent network of the monolayer, as the majority of the monolayer is non-anchored and relies on the covalent network to be exfoliated from the bulk MoS2. Applying pressure or using smoother Au films increases the MoS2-Au interaction, but may cause the covalent network of the MoS2 monolayer to break due to excessive lateral strain, resulting in nearly zero exfoliation yield. Scanning tunneling microscopy measurements of the MoS2 monolayer-covered Au show that even the smallest atomic-scale imperfections can disrupt the MoS2-Au interaction. These findings can be used to develop new strategies for fabricating vdW monolayers through metal-assisted exfoliation, such as in cases involving patterned or non-uniform surfaces.

Epitaxial Growth of Large-Area Monolayers and van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation

The transition-metal chalcogenides include some of the most important and ubiquitous families of 2D materials. They host an exceptional variety of electronic and collective states, which can in principle be readily tuned by combining different compounds in van der Waals heterostructures. Achieving this, however, presents a significant materials challenge. The highest quality heterostructures are usually fabricated by stacking layers exfoliated from bulk crystals, which - while producing excellent prototype devices - is time consuming, cannot be easily scaled, and can lead to significant complications for materials stability and contamination. Growth via the ultra-high vacuum deposition technique of molecular-beam epitaxy (MBE) should be a premier route for 2D heterostructure fabrication, but efforts to achieve this are complicated by non-uniform layer coverage, unfavorable growth morphologies, and the presence of significant rotational disorder of the grown epilayer. This work demonstrates a dramatic enhancement in the quality of MBE grown 2D materials by exploiting simultaneous deposition of a sacrificial species from an electron-beam evaporator during the growth. This approach dramatically enhances the nucleation of the desired epi-layer, in turn enabling the synthesis of large-area, uniform monolayers with enhanced quasiparticle lifetimes, and facilitating the growth of epitaxial van der Waals heterostructures.

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Gold-Template-Assisted Mechanical Exfoliation of Large-Area 2D Layers Enables Efficient and Precise Construction of Moiré Superlattices

Moiré superlattices, consisting of rotationally aligned 2D atomically thin layers, provide a highly novel platform for the study of correlated quantum phenomena. However, reliable and efficient construction of moiré superlattices is challenging because of difficulties to accurately angle-align small exfoliated 2D layers and the need to shun wet-transfer processes. Here, efficient and precise construction of various moiré superlattices is demonstrated by picking up and stacking large-area 2D mono- or few-layer crystals with predetermined crystal axes, made possible by a gold-template-assisted mechanical exfoliation method. The exfoliated 2D layers are semiconductors, superconductors, or magnets and their high quality is confirmed by photoluminescence and Raman spectra and by electrical transport measurements of fabricated field-effect transistors and Hall devices. Twisted homobilayers with angle-twisting accuracy of ≈0.3°, twisted heterobilayers with sub-degree angle-alignment accuracy, and multilayer superlattices are precisely constructed and characterized by their moiré patterns, interlayer excitons, and second harmonic generation. The present study paves the way for exploring emergent phenomena in moiré superlattices.

A versatile laser-based apparatus for time-resolved ARPES with micro-scale spatial resolution

We present the development of a versatile apparatus for 6.2 eV laser-based time and angle-resolved photoemission spectroscopy with micrometer spatial resolution (time-resolved μ-ARPES). With a combination of tunable spatial resolution down to ∼11 μm, high energy resolution (∼11 meV), near-transform-limited temporal resolution (∼280 fs), and tunable 1.55 eV pump fluence up to 3 mJ/cm2, this time-resolved μ-ARPES system enables the measurement of ultrafast electron dynamics in exfoliated and inhomogeneous materials. We demonstrate the performance of our system by correlating the spectral broadening of the topological surface state of Bi2Se3 with the spatial dimension of the probe pulse, as well as resolving the spatial inhomogeneity contribution to the observed spectral broadening. Finally, after in situ exfoliation, we performed time-resolved μ-ARPES on a ∼30 μm flake of transition metal dichalcogenide WTe2, thus demonstrating the ability to access ultrafast electron dynamics with momentum resolution on micro-exfoliated materials.