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Wang H, Du Z, Jiang X, Cao S, Zou B, Zheng J, Zhao J. Ultrastable Photodetectors Based on Blue CsPbBr 3 Perovskite Nanoplatelets via a Surface Engineering Strategy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11694-11703. [PMID: 38387044 DOI: 10.1021/acsami.3c18659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Recently, photodetectors based on perovskite nanoplatelets (NPLs) have attracted considerable attention in the visible spectral region owing to their large absorption cross-section, high exciton binding energy, excellent charge transfer properties, and appropriate flexibility. However, their stability and performance are still challenging for perovskite NPL photodetectors. Here, a surface engineering strategy to enhance the optical stability of blue-light CsPbBr3 NPLs by acetylenedicarboxylic acid (ATDA) treatment has been developed. ATDA has strong binding capacity and a short chain length, which can effectively passivate defects and significantly improve the photoluminescence quantum efficiency, stability, and carrier mobility of NPLs. As a result, ATDA-treated CsPbBr3 NPLs exhibit improved optical properties in both solutions and films. The NPL solution maintains high PL performance even after being heated at 80 °C for 2 h, and the NPL film remains nondegradable after 4 h of exposure to ultraviolet irradiation. Especially, photodetectors based on the treated CsPbBr3 NPL films demonstrate exceptional performance, especially when the detectivity approaches up to 9.36 × 1012 Jones, which can be comparable to the best CsPbBr3 NPL photodetectors ever reported. More importantly, the assembled devices demonstrated high stability (stored in an air environment for more than 30 days), significantly exceeding that of untreated NPLs.
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Affiliation(s)
- Hao Wang
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Zhentao Du
- School of Resources, Environment, and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Xue Jiang
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Bingsuo Zou
- School of Resources, Environment, and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
| | - Jinju Zheng
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
- School of Resources, Environment, and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, China
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Shi X, Liu C, Zhang X, Zhan G, Cai Y, Zhou D, Zhao Y, Wang N, Hu F, Wang X, Ma H, Wang L. Vapor Phase Growth of Air-Stable Hybrid Perovskite FAPbBr 3 Single-Crystalline Nanosheets. NANO LETTERS 2024; 24:2299-2307. [PMID: 38334593 DOI: 10.1021/acs.nanolett.3c04604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Organic-inorganic hybrid perovskites have attracted tremendous attention owing to their fascinating optoelectronic properties. However, their poor air stability seriously hinders practical applications, which becomes more serious with thickness down to the nanoscale. Here we report a one-step vapor phase growth of HC(NH2)2PbBr3 (FAPbBr3) single-crystalline nanosheets of tunable size up to 50 μm and thickness down to 20 nm. The FAPbBr3 nanosheets demonstrate high stability for over months of exposure to air with no degradation in surface roughness and photoluminescence efficiency. Besides, the FAPbBr3 photodetectors exhibit superior overall performance as compared to previous devices based on nonlayered perovskite nanosheets, such as an ultralow dark current of 24 pA, an ultrahigh responsivity of 1033 A/W, an external quantum efficiency over 3000%, a rapid response time around 25 ms, and a high on/off ratio of 104. This work provides a strategy to tackle the challenges of hybrid perovskites toward integrated optoelectronics with requirements of nanoscale thickness, high stability, and excellent performance.
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Affiliation(s)
- Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Xiaomin Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuxiao Cai
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuwei Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Nana Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Fengrui Hu
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoyong Wang
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huifang Ma
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
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Mandal A, Khuntia SK, Mondal D, Mahadevan P, Bhattacharyya S. Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites. J Am Chem Soc 2023. [PMID: 37906676 DOI: 10.1021/jacs.3c10195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.
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Affiliation(s)
- Arnab Mandal
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
| | - Sanuja Kumar Khuntia
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Debayan Mondal
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Priya Mahadevan
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
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Ren L, Tan Q, Gao K, Yang P, Wang Q, Liu Y. Constructing high-quality 1D nano/microwire hybrid structure for high-performance photodetectors based on CdSe nanobelt/perovskite microwire. NANOPHOTONICS (BERLIN, GERMANY) 2023; 12:1347-1357. [PMID: 39677589 PMCID: PMC11635968 DOI: 10.1515/nanoph-2023-0106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 02/18/2023] [Indexed: 12/17/2024]
Abstract
All-inorganic perovskite CsPbBr3 is considered as a promising photoelectric material due to its high environmental stability and excellent photoelectric properties. Constructing low-dimension hybrid structures by combining CsPbBr3 with semiconductor materials have recently attracted particular attention because they may bring new functionalities or generate synergistic effects in optoelectronic devices. Herein, the high-quality 1D CdSe nanobelt (NB)/CsPbBr3 microwire (MW) photodetectors are designed first time, which exhibit excellent performance as integrating I on/I off ratio of 5.02 × 104, responsivity of 1.63 × 103 A/W, external quantum efficiency of 3.8 × 105% and detectivity up to 5.33 × 1012 Jones. These properties are all improved at least one order of magnitude compared to those of single CsPbBr3 photodetectors. Moreover, the response range is broadened from the 300-570 nm (the single CsPbBr3 device) to 300-740 nm (the hybrid photodetector). Then, the first-principles calculations are carried out to reveal the physical mechanism from the atomic scale. The remarkably improved optoelectronic properties are attributed to the high crystalline quality as well as unique band alignment of hybrid structure that facilitate the effective separation and transport of photogenerated carriers. These works indicate that 1D CdSe/CsPbBr3 hybrid devices have promising applications in building high-performance and broader spectral response photodetectors and other optoelectronic devices.
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Affiliation(s)
- Li Ren
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming650500, China
| | - Qiuhong Tan
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming650500, China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming650500, China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming650500, China
| | - Kunpeng Gao
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming650500, China
| | - Peizhi Yang
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming650500, China
| | - Qianjin Wang
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming650500, China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming650500, China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming650500, China
| | - Yingkai Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming650500, China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming650500, China
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming650500, China
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Kostopoulou A, Konidakis I, Stratakis E. Two-dimensional metal halide perovskites and their heterostructures: from synthesis to applications. NANOPHOTONICS (BERLIN, GERMANY) 2023; 12:1643-1710. [PMID: 39634119 PMCID: PMC11501535 DOI: 10.1515/nanoph-2022-0797] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 03/03/2023] [Indexed: 12/07/2024]
Abstract
Size- and shape-dependent unique properties of the metal halide perovskite nanocrystals make them promising building blocks for constructing various electronic and optoelectronic devices. These unique properties together with their easy colloidal synthesis render them efficient nanoscale functional components for multiple applications ranging from light emission devices to energy conversion and storage devices. Recently, two-dimensional (2D) metal halide perovskites in the form of nanosheets (NSs) or nanoplatelets (NPls) are being intensively studied due to their promising 2D geometry which is more compatible with the conventional electronic and optoelectronic device structures where film-like components are usually employed. In particular, 2D perovskites exhibit unique thickness-dependent properties due to the strong quantum confinement effect, while enabling the bandgap tuning in a wide spectral range. In this review the synthesis procedures of 2D perovskite nanostructures will be summarized, while the application-related properties together with the corresponding applications will be extensively discussed. In addition, perovskite nanocrystals/2D material heterostructures will be reviewed in detail. Finally, the wide application range of the 2D perovskite-based structures developed to date, including pure perovskites and their heterostructures, will be presented while the improved synergetic properties of the multifunctional materials will be discussed in a comprehensive way.
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Affiliation(s)
- Athanasia Kostopoulou
- Foundation for Research & Technology – Hellas (FORTH), Institute of Electronic Structure & Laser (IESL), Vassilika Vouton, Heraklion700 13, Greece
| | - Ioannis Konidakis
- Foundation for Research & Technology – Hellas (FORTH), Institute of Electronic Structure & Laser (IESL), Vassilika Vouton, Heraklion700 13, Greece
| | - Emmanuel Stratakis
- Foundation for Research & Technology – Hellas (FORTH), Institute of Electronic Structure & Laser (IESL), Vassilika Vouton, Heraklion700 13, Greece
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6
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Zhang L, Li X, Tian Y, Hao B, Han J, Chen H, Zou B, Du C. Ultrafast One-Step Deposition Route to Fabricate Single-Crystal CsPbX 3 (X = Cl, Cl/Br, Br, and Br/I) Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13270-13280. [PMID: 36877582 DOI: 10.1021/acsami.2c19990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Inorganic perovskites have received much attention due to their stability and high performance in luminescence, photoelectric conversion, and photodetection. However, perovskite optoelectronic devices prepared by the solution technique are still suffering from time-consuming and complex operations. In this paper, a single-crystal perovskite-based photodetector (PD) is prepared by very fast one-step deposition of synthesizing microplatelets (MPs) on the electrode directly. The saturated precursor is carefully optimized by adding appropriate antisolvent chlorobenzene (CB) to fabricate the MPs with their PL wavelength ranging from 418 to 600 nm. Furthermore, the PDs with a low dark current on order of nanoangstroms, high responsivity and detectivity of up to 10.7 A W-1 and 1012 Jones, respectively, and an ultrafast response rate featured by 278/287 μs (rise/decay time) are achieved. These all-inorganic perovskite PDs with a simple fabricating process and tunable detection wavelength meet the evolution tendency of PDs toward low cost and high performance, which is a high-profile strategy to realize high-performance perovskite PDs.
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Affiliation(s)
- Li Zhang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xinxin Li
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ye Tian
- Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Bin Hao
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jiufang Han
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hong Chen
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center of Material and Optoelectronics Engineering, University of Academy of Science, Beijing 100049, P. R. China
- The Yangtze River Delta Physics Research Center, Liyang, Jiangsu 213000, P. R. China
| | - Bingsuo Zou
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and School of Resources, Environments and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Chunhua Du
- Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Center of Material and Optoelectronics Engineering, University of Academy of Science, Beijing 100049, P. R. China
- The Yangtze River Delta Physics Research Center, Liyang, Jiangsu 213000, P. R. China
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Sun W, Yun R, Liu Y, Zhang X, Yuan M, Zhang L, Li X. Ligands in Lead Halide Perovskite Nanocrystals: From Synthesis to Optoelectronic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205950. [PMID: 36515335 DOI: 10.1002/smll.202205950] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
Ligands are indispensable for perovskite nanocrystals (NCs) throughout the whole lifetime, as they not only play key roles in the controllable synthesis of NCs with different sizes and shapes, but also act as capping shell that affects optical properties and electrical coupling of NCs. Establishing a systematic understanding of the relationship between ligands and perovskite NCs is significant to enable many potential applications of NCs. This review mainly focuses on the influence of ligands on perovskite NCs. First of all, the ligands-dominated size and shape control of NCs is discussed. Whereafter, the surface defects of NCs and the bonding between ligands and perovskite NCs are classified, and corresponding post-treatment of surface defects via ligands is also summarized. Furthermore, advances in engineering the ligands towards the high performance of optoelectronic devices based on perovskite NCs, including photodetector, solar cell, light emitting diode (LED), and laser, and finally to potential challenges are also discussed.
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Affiliation(s)
- Wenda Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Rui Yun
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Yuling Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Xiaodan Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, 300071, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300071, China
| | - Libing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic, Department of Chemistry, Tianjin University, Tianjin, 300072, China
| | - Xiyan Li
- Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Conversion Center, Nankai University, Tianjin, 300350, China
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
- Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Nankai University, Tianjin, 300350, China
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8
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Braga Carani L, Eze VO, Okoli O. Effect of Interface Modification on Mechanoluminescence-Inorganic Perovskite Impact Sensors. SENSORS (BASEL, SWITZERLAND) 2022; 23:236. [PMID: 36616833 PMCID: PMC9824018 DOI: 10.3390/s23010236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/09/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
It is becoming increasingly important to develop innovative self-powered, low-cost, and flexible sensors with the potential for structural health monitoring (SHM) applications. The mechanoluminescence (ML)-perovskite sensor is a potential candidate that combines the light-emitting principles of mechanoluminescence with the light-absorbing properties of perovskite materials. Continuous in-situ SHM with embedded sensors necessitates long-term stability. A highly stable cesium lead bromide photodetector with a carbon-based electrode and a zinc sulfide (ZnS): copper (Cu) ML layer was described in this article. The addition of a magnesium iodide (MgI2) interfacial modifier layer between the electron transport layer (ETL) and the Perovskite interface improved the sensor's performance. Devices with the modified structure outperformed devices without the addition of MgI2 in terms of response time and impact-sensing applications.
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9
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Punde AL, Shah SP, Hase YV, Waghmare AD, Shinde PS, Bade BR, Pathan HM, Prasad M, Patole SP, Jadkar S. Self-biased photodetector using 2D layered bismuth triiodide (BiI 3) prepared using the spin coating method. RSC Adv 2022; 12:30157-30166. [PMID: 36329937 PMCID: PMC9585650 DOI: 10.1039/d2ra05484a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Accepted: 10/08/2022] [Indexed: 11/05/2022] Open
Abstract
Layered bismuth triiodide (BiI3) is a 2D material that has emerged as an ideal choice for optical sensors. Although BiI3 has been prepared using vacuum-based deposition techniques, there is a dearth of research studies on synthesizing this material using chemical route. The present work uses a facile spin coating method with varying rotation speeds (rpm) to fabricate BiI3 material thin films for photodetection applications. The structural, optical, and morphological study of BiI3 thin films prepared at 3000–6000 rpm were investigated. XRD analysis indicates formation of BiI3 films and revealed that BiI3 has a rhombohedral crystal structure. FESEM analysis showed that BiI3 films prepared at different rpm are homogeneous, dense, and free from cracks, flaws, and protrusions. In addition, films show an island-like morphology with grain boundaries having different grain sizes, micro gaps, and the evolution of the granular morphology of BiI3 particles. The UV spectroscopy and photoluminescence analysis revealed that BiI3 films strongly absorb light in the visible region of spectra with a high absorption coefficient of ∼104 cm−1, have an optical band gap of ∼1.51 eV. A photodetector was realised using fabricated BiI3 film obtained at an optimum spin speed of 4000 rpm. It showed rapid rise and decay times of 0.4 s and 0.5 s, a responsivity of ∼100 μA W−1, external quantum efficiency of 2.1 × 10−4%, and detectivity of ∼3.69 × 106 Jones at a bias voltage of 0 V. Our results point towards a new direction for layered 2D BiI3 materials for the application in self-biased photodetectors. Layered bismuth triiodide (BiI3) is a 2D material that has emerged as an ideal choice for optical sensors.![]()
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Affiliation(s)
- Ashvini L Punde
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Shruti P Shah
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Yogesh V Hase
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Ashish D Waghmare
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Pratibha S Shinde
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Bharat R Bade
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Habib M Pathan
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
| | - Mohit Prasad
- Department of Physics, Savitribai Phule Pune University Pune 411007 India .,Department of Applied Science and Humanities, PCCOE Nigdi Pune 411004 India
| | - Shashikant P Patole
- Department of Physics, Khalifa University of Science and Technology Abu Dhabi 127788 UAE
| | - Sandesh Jadkar
- Department of Physics, Savitribai Phule Pune University Pune 411007 India
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10
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Paritmongkol W, Lee WS, Shcherbakov-Wu W, Ha SK, Sakurada T, Oh SJ, Tisdale WA. Morphological Control of 2D Hybrid Organic-Inorganic Semiconductor AgSePh. ACS NANO 2022; 16:2054-2065. [PMID: 35098708 DOI: 10.1021/acsnano.1c07498] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Silver phenylselenolate (AgSePh) is a hybrid organic-inorganic two-dimensional (2D) semiconductor exhibiting narrow blue emission, in-plane anisotropy, and large exciton binding energy. Here, we show that the addition of carefully chosen solvent vapors during the chemical transformation of metallic silver to AgSePh allows for control over the size and orientation of AgSePh crystals. By testing 28 solvent vapors (with different polarities, boiling points, and functional groups), we controlled the resulting crystal size from <200 nm up to a few μm. Furthermore, choice of solvent vapor can substantially improve the orientational homogeneity of 2D crystals with respect to the substrate. In particular, solvents known to form complexes with silver ions, such as dimethyl sulfoxide (DMSO), led to the largest lateral crystal dimensions and parallel crystal orientation. We perform systematic optical and electrical characterizations on DMSO vapor-grown AgSePh films demonstrating improved crystalline quality, lower defect densities, higher photoconductivity, lower dark conductivity, suppression of ionic migration, and reduced midgap photoluminescence at low temperature. Overall, this work provides a strategy for realizing AgSePh films with improved optical properties and reveals the roles of solvent vapors on the chemical transformation of metallic silver.
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Affiliation(s)
- Watcharaphol Paritmongkol
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Woo Seok Lee
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Wenbi Shcherbakov-Wu
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Seung Kyun Ha
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tomoaki Sakurada
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - William A Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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11
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Yu Y, Wang W, Li W, Wang G, Wang Y, Lu Z, Li S, Zhao W, Li Y, Liu T, Yan X. Photodetectors Based on Micro-nano Structure Material. Front Chem 2022; 9:832028. [PMID: 35096783 PMCID: PMC8790564 DOI: 10.3389/fchem.2021.832028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 12/24/2021] [Indexed: 01/18/2023] Open
Abstract
Photodetectors converting optical signals into electrical signals have been widely utilized and have received more and more attention in scientific research and industrial fields including optical interconnection, optical communication, and environmental monitoring. Herein, we summarize the latest development of photodetectors with different micro-nano structures and different materials and the performance indicators of photodetectors. Several photodetectors, such as flexible, ultraviolet two-dimensional (2D) microscale, and dual-band photodetectors, are listed in this minireview. Meanwhile, the current bottleneck and future development prospects of the photodetector are discussed.
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Affiliation(s)
- Yu Yu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
- *Correspondence: Yu Yu,
| | - Wuyue Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Weihua Li
- Weihai Photonics Information Technology Lab Co., Ltd., Shandong, China
| | - Gong Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Yulei Wang
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Zhiwei Lu
- Center for Advanced Laser Technology, Hebei University of Technology, Tianjin, China
- Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin, China
| | - Sensen Li
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Wanli Zhao
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Yuhai Li
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Tongyu Liu
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
| | - Xiusheng Yan
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin, China
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12
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Huang X, Guo Y, Liu Y. Perovskite photodetectors and their application in artificial photonic synapses. Chem Commun (Camb) 2021; 57:11429-11442. [PMID: 34642713 DOI: 10.1039/d1cc04447h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.
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Affiliation(s)
- Xin Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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13
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Trifiletti V, Asker C, Tseberlidis G, Riva S, Zhao K, Tang W, Binetti S, Fenwick O. Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity. FRONTIERS IN ELECTRONICS 2021. [DOI: 10.3389/felec.2021.758603] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.
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14
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Zhou R, Hong D, Gao S, Gu Y, Liu X. Electric Field Induced Electrorotation of 2D Perovskite Microplates. MICROMACHINES 2021; 12:mi12101228. [PMID: 34683279 PMCID: PMC8537397 DOI: 10.3390/mi12101228] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 09/30/2021] [Accepted: 10/05/2021] [Indexed: 12/26/2022]
Abstract
High precision-controlled movement of microscale devices is crucial to obtain advanced miniaturized motors. In this work, we report a high-speed rotating micromotor based on two-dimensional (2D) all-inorganic perovskite CsPbBr3 microplates controlled via alternating-current (AC) external electric field. Firstly, the device configuration with optimized electric field distribution has been determined via systematic physical simulation. Using this optimized biasing configuration, when an AC electric field is applied at the four-electrode system, the microplates suspended in the tetradecane solution rotate at a speed inversely proportional to AC frequency, with a maximum speed of 16.4 × 2π rad/s. Furthermore, the electrical conductivity of CsPbBr3 microplates has been determined in a contactless manner, which is approximately 10−9–10−8 S/m. Our work has extended the investigations on AC electric field-controlled micromotors from 1D to 2D scale, shedding new light on developing micromotors with new configuration.
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Affiliation(s)
- Ruifu Zhou
- College of Microtechnology & Microtechnology, Qingdao University, Qingdao 266071, China;
| | - Daobiao Hong
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
| | - Siyu Gao
- Materials Science and Engineering Department, Carnegie Mellon University, Pittsburgh, PA 15219, USA;
| | - Yu Gu
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
- Correspondence: (Y.G.); (X.L.)
| | - Xuhai Liu
- College of Microtechnology & Microtechnology, Qingdao University, Qingdao 266071, China;
- Correspondence: (Y.G.); (X.L.)
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15
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Mandal A, Ghosh A, Ghosh D, Bhattacharyya S. Photodetectors with High Responsivity by Thickness Tunable Mixed Halide Perovskite Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43104-43114. [PMID: 34482693 DOI: 10.1021/acsami.1c13452] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Chemical transformation of typically "nonlayered" phases into two-dimensional structures remains a formidable task. Among the thickness tunable CsPbX3 (X = Br, Br/I, I) nanosheets (NSs), CsPbBr1.5I1.5 NSs with a thickness of ∼4.9 nm have structural stability superior to ∼6.8 nm CsPbI3 NSs and better hole mobility than ∼3.7 nm CsPbBr3 NSs. Moving beyond the much-explored CsPbBr3 photodetectors, we demonstrate a sharp improvement of the photodetection of CsPbBr1.5I1.5 NS devices by thickening the NSs to ∼6.1 nm through combining 8-carbon and 18-carbon ligand surfactants. Thereby, the responsivity increases up to one of the highest values of 3313 A W-1 at 1.5 V (and 3946 A W-1 at 2 V) with detectivity of 1.6 × 1011 Jones at 1.5 V, due to the increase in carrier mobility up to 7.9 × 10-4 cm2 V-1 s-1. The better device performance of the NSs than 8.6-13.9 nm nanocubes (NCs) is due to their planarity which facilitates in-plane mobilization of the charge carriers.
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Affiliation(s)
- Arnab Mandal
- Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur-741246, India
| | - Anima Ghosh
- Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur-741246, India
| | - Dibyendu Ghosh
- Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur-741246, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur-741246, India
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16
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Yao F, Liu Y, Xu Y, Peng J, Gui P, Liang J, Lin Q, Tao C, Fang G. Room-Temperature Diffusion-Induced Extraction for Perovskite Nanocrystals with High Luminescence and Stability. SMALL METHODS 2021; 5:e2001292. [PMID: 34927924 DOI: 10.1002/smtd.202001292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/08/2021] [Indexed: 06/14/2023]
Abstract
Metal halide perovskite nanocrystals (NCs) serve as a kind of ideal semiconductor for luminescence and display applications. However, the optoelectronic performance and stability of perovskite NCs are mainly subjected to current ligand strategies since these ligands exhibit a highly dynamic binding state, which complicates NC purification and storage. Herein, a method named diffusion-induced extraction is developed for crystallization (DEC) at room temperature, in which silicone oil serves as a medium to separate the solvent from perovskite precursors and diethyl ether promotes the nucleation, leading to highly emissive perovskite NCs. The formation mechanism of NCs using this approach is elucidated, and their optoelectronic properties are fully characterized. The resultant NCs ink exhibits a high photoluminescence quantum yield (PLQY) over 90% with a narrow full width at half maximum of 17 nm. The DEC method strengthens the interaction between ligand and NCs via the hydrophobic silicone oil. Therefore, the NCs maintain almost 95% of their initial PLQYs after aging more than seven months in air. The findings will be of great significance for the continued advancement of high PLQY perovskite NCs through a better understanding of formation dynamics. The DEC strategy presents a major step forward for advancing the field of perovskite semiconductor nanomaterials.
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Affiliation(s)
- Fang Yao
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yongjie Liu
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yalun Xu
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jiali Peng
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Pengbin Gui
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jiwei Liang
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Qianqian Lin
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chen Tao
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Guojia Fang
- Key Lab of Artificial, Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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17
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Zhu QB, Li B, Yang DD, Liu C, Feng S, Chen ML, Sun Y, Tian YN, Su X, Wang XM, Qiu S, Li QW, Li XM, Zeng HB, Cheng HM, Sun DM. A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nat Commun 2021; 12:1798. [PMID: 33741964 DOI: 10.5281/zenodo.4540948] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 02/25/2021] [Indexed: 05/23/2023] Open
Abstract
The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 107 A/W and a specific detectivity of 2 × 1016 Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm2.
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Affiliation(s)
- Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Dan-Dan Yang
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ya-Nan Tian
- College of Information Science and Engineering, Northeastern University, Shenyang, China
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Xiao-Mu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Xiao-Ming Li
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China.
| | - Hai-Bo Zeng
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
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18
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Zhu QB, Li B, Yang DD, Liu C, Feng S, Chen ML, Sun Y, Tian YN, Su X, Wang XM, Qiu S, Li QW, Li XM, Zeng HB, Cheng HM, Sun DM. A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nat Commun 2021; 12:1798. [PMID: 33741964 PMCID: PMC7979753 DOI: 10.1038/s41467-021-22047-w] [Citation(s) in RCA: 130] [Impact Index Per Article: 32.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 02/25/2021] [Indexed: 11/21/2022] Open
Abstract
The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 107 A/W and a specific detectivity of 2 × 1016 Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm2. To emulate nature biological processing, highly-integrated ultra-sensitive artificial neuromorphic system is highly desirable. Here, the authors report flexible sensor array of 1024 pixels using combination of carbon nanotubes and perovskite QDs as active matetials, achieving highly responsive device for reinforcement learning.
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Affiliation(s)
- Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Dan-Dan Yang
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ya-Nan Tian
- College of Information Science and Engineering, Northeastern University, Shenyang, China
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Xiao-Mu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Xiao-Ming Li
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China.
| | - Hai-Bo Zeng
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China. .,Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
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19
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Li Z, Sun F, Zheng Z, Chen J, Davydov AV, Deng S, Zhang H, Chen H, Liu F. High-Quality All-Inorganic Perovskite CsPbBr 3 Microsheet Crystals as Low-Loss Subwavelength Exciton-Polariton Waveguides. NANO LETTERS 2021; 21:1822-1830. [PMID: 33560855 DOI: 10.1021/acs.nanolett.0c04908] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Nanostructured all-inorganic metal halide perovskites have attracted considerable attention due to their outstanding photonic and optoelectronic properties. Particularly, they can exhibit room-temperature exciton-polaritons (EPs) capable of confining electromagnetic fields down to the subwavelength scale, enabling efficient light harvesting and guiding. However, a real-space nanoimaging study of the EPs in perovskite crystals is still absent. Additionally, few studies focused on the ambient-pressure and reliable fabrication of large-area CsPbBr3 microsheets. Here, CsPbBr3 orthorhombic microsheet single crystals were successfully synthesized under ambient pressure. Their EPs were examined using a real-space nanoimaging technique, which reveal EP waveguide modes spanning the visible to near-infrared spectral region. The EPs exhibit a sufficient long propagation length of over 16 μm and a very low propagation loss of less than 0.072 dB·μm-1. These results demonstrate the potential applications of CsPbBr3 microsheets as subwavelength waveguides in integrated optics.
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Affiliation(s)
- Zijuan Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Fengsheng Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Zebo Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Albert V Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Theiss Research, Inc., La Jolla, California 92037, United States
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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20
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Yu X, Zhou Q, Xu J, Liang L, Wang X, Wu J, Gao P. The Impact of PbI
2
:KI Alloys on the Performance of Sequentially Deposited Perovskite Solar Cells. Eur J Inorg Chem 2021. [DOI: 10.1002/ejic.202001109] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Affiliation(s)
- Xiaoyan Yu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Qin Zhou
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Jianbin Xu
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Lusheng Liang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Xiaobing Wang
- College of Materials Science and Engineering Huaqiao University Xiamen 361021 China
| | - Jihuai Wu
- College of Materials Science and Engineering Huaqiao University Xiamen 361021 China
| | - Peng Gao
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key Laboratory of Nanomaterials Institution Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China
- Laboratory for Advanced Functional Materials Xiamen Institute of Rare Earth Materials Haixi Institute Chinese Academy of Sciences Xiamen 361021 China
- University of Chinese Academy of Sciences Beijing 100049 China
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21
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Wang HP, Li S, Liu X, Shi Z, Fang X, He JH. Low-Dimensional Metal Halide Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003309. [PMID: 33346383 DOI: 10.1002/adma.202003309] [Citation(s) in RCA: 175] [Impact Index Per Article: 43.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 07/21/2020] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.
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Affiliation(s)
- Hsin-Ping Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xinya Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
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22
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López CA, Abia C, Alvarez-Galván MC, Hong BK, Martínez-Huerta MV, Serrano-Sánchez F, Carrascoso F, Castellanos-Gómez A, Fernández-Díaz MT, Alonso JA. Crystal Structure Features of CsPbBr 3 Perovskite Prepared by Mechanochemical Synthesis. ACS OMEGA 2020; 5:5931-5938. [PMID: 32226873 PMCID: PMC7098001 DOI: 10.1021/acsomega.9b04248] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2019] [Accepted: 02/03/2020] [Indexed: 05/04/2023]
Abstract
We present a mechanochemical procedure, with solvent-free, green-chemistry credentials, to grow all-inorganic CsPbBr3 perovskite. The crystal structure of this perovskite and its correlations with the physicochemical properties have been studied. Synchrotron X-ray diffraction (SXRD) and neutron powder diffraction (NPD) allowed us to follow the crystallographic behavior from 4 to 773 K. Unreported features like the observed negative thermal expansion of the b unit-cell parameter stem from octahedral distortions in the 4-100 K temperature range. The mechanochemical synthesis was designed to reduce the impact energy during the milling process, leading to a defect-free, well-crystallized sample characterized by a minimum unit-cell volume and octahedral tilting angles in the low-temperature orthorhombic perovskite framework, defined in the Pbnm space group. The UV-vis diffuse reflectance spectrum shows a reduced band gap of 2.22(3) eV, and the photocurrent characterization in a photodetector reveals excellent properties with potential applications of this material in optoelectronic devices.
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Affiliation(s)
- Carlos A. López
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- INTEQUI,
(UNSL-CONICET) and Facultad de Química, Bioquímica y
Farmacia, UNSL, Almirante Brown 1455, 5700 San Luis, Argentina
- E-mail: ,
(C.A.L.)
| | - Carmen Abia
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- Institut
Laue Langevin, 38042 Grenoble Cedex, France
| | | | - Bo-Kyung Hong
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- Instituto
de Catálisis y Petroleoquímica, CSIC, Cantoblanco, 28049 Madrid, Spain
| | | | | | - Felix Carrascoso
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
| | | | | | - José A. Alonso
- Instituto
de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, 28049 Madrid, Spain
- E-mail: (J.A.A.)
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23
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Parveen S, Paul KK, Giri PK. Precise Tuning of the Thickness and Optical Properties of Highly Stable 2D Organometal Halide Perovskite Nanosheets through a Solvothermal Process and Their Applications as a White LED and a Fast Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6283-6297. [PMID: 31916437 DOI: 10.1021/acsami.9b20896] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Precise control of the thickness of large-area two-dimensional (2D) organometal halide perovskite layers is extremely challenging owing to the inherent instability of the organic component. Herein, a novel, highly reproducible, and facile solvothermal route is reported to synthesize and tailor the thickness and optical band gap of the organic-inorganic halide perovskite nanosheets (NSs). Our study reveals that self-assembly of randomly oriented perovskite nanorods leads to the growth of multilayered perovskite NSs at ∼100 °C, while at higher temperature, large-area few-layer to bilayer 2D NSs (CH3NH3PbBr3) are obtained through lattice expansion and layer separation depending precisely on the temperature. Interestingly, the thickness of the 2D NSs shows a linear dependence on the reaction temperature and thus enables precise tuning of the thickness from 14 layers to 2 layers, giving rise to a systematic increase in the band gap and appearance of excitonic absorption bands. Quantitative analysis of the change in the band gap with thickness revealed a strong quantum confinement effect in the 2D layers. The perovskite 2D NSs exhibit tunable color and a high photoluminescence (PL) quantum yield (QY) up to 84%. Through a careful analysis of the steady-state and time-resolved PL spectra, the origin of the lower PL QY in thinner NSs is traced to surface defects in the 2D layers, for the first time. A white light converter was fabricated using the composition-tuned 2D CH3NH3PbBrI2 NS on a blue light-emitting diode chip. The 2D perovskite photodetector exhibits a stable and very fast rise/fall time (24 μs/103 μs) along with high responsivity and detectivity of ∼1.93 A/W and 1.04 × 1012 Jones, respectively. Storage, operational, and temperature-dependent stability studies reveal high stability of the 2D perovskite NSs under the ambient condition with high humidity. The reported method is highly promising for the development of large-area stable 2D perovskite layers for various cutting-edge optoelectronic applications.
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Affiliation(s)
- Sumaiya Parveen
- Department of Physics , Indian Institute of Technology Guwahati , Guwahati 781039 , India
| | - Kamal Kumar Paul
- Department of Physics , Indian Institute of Technology Guwahati , Guwahati 781039 , India
| | - P K Giri
- Department of Physics , Indian Institute of Technology Guwahati , Guwahati 781039 , India
- Centre for Nanotechnology , Indian Institute of Technology Guwahati , Guwahati 781039 , India
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24
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Fakharuddin A, Shabbir U, Qiu W, Iqbal T, Sultan M, Heremans P, Schmidt-Mende L. Inorganic and Layered Perovskites for Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807095. [PMID: 31012172 DOI: 10.1002/adma.201807095] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2018] [Revised: 02/22/2019] [Indexed: 05/25/2023]
Abstract
Organic-inorganic halide perovskites are making breakthroughs in a range of optoelectronic devices. Reports of >23% certified power conversion efficiency in photovoltaic devices, external quantum efficiency >21% in light-emitting diodes (LEDs), continuous-wave lasing and ultralow lasing thresholds in optically pumped lasers, and detectivity in photodetectors on a par with commercial GaAs rivals are being witnessed, making them the fastest ever emerging material technology. Still, questions on their toxicity and long-term stability raise concerns toward their market entry. The intrinsic instability in these materials arises due to the organic cation, typically the volatile methylamine (MA), which contributes to hysteresis in the current-voltage characteristics and ion migration. Alternative inorganic substitutes to MA, such as cesium, and large organic cations that lead to a layered structure, enhance structural as well as device operational stability. These perovskites also provide a high exciton binding energy that is a prerequisite to enhance radiative emission yield in LEDs. The incorporation of inorganic and layered perovskites, in the form of polycrystalline films or as single-crystalline nanostructure morphologies, is now leading to the demonstration of stable devices with excellent performance parameters. Herein, key developments made in various optoelectronic devices using these perovskites are summarized and an outlook toward stable yet efficient devices is presented.
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Affiliation(s)
- Azhar Fakharuddin
- IMEC, Kapeldreef 75, Heverlee, 3001, Belgium
- Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg, 3000, Leuven, Belgium
- Department of Physics, University of Konstanz, 78457, Konstanz, Germany
| | - Umair Shabbir
- Department of Physics, Faculty of Science, University of Gujrat, Gujrat, 50700, Punjab, Pakistan
- Nanoscience and Technology Department, National Centre for Physics, Quaid-I-Azam, University Campus, Islamabad, 44000, Pakistan
| | - Weiming Qiu
- IMEC, Kapeldreef 75, Heverlee, 3001, Belgium
- Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg, 3000, Leuven, Belgium
| | - Tahir Iqbal
- Department of Physics, Faculty of Science, University of Gujrat, Gujrat, 50700, Punjab, Pakistan
| | - Muhammad Sultan
- Nanoscience and Technology Department, National Centre for Physics, Quaid-I-Azam, University Campus, Islamabad, 44000, Pakistan
| | - Paul Heremans
- IMEC, Kapeldreef 75, Heverlee, 3001, Belgium
- Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg, 3000, Leuven, Belgium
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25
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Gui P, Zhou H, Yao F, Song Z, Li B, Fang G. Space-Confined Growth of Individual Wide Bandgap Single Crystal CsPbCl 3 Microplatelet for Near-Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1902618. [PMID: 31408255 DOI: 10.1002/smll.201902618] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2019] [Revised: 07/24/2019] [Indexed: 06/10/2023]
Abstract
Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I- or Br-based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl-based wide bandgap perovskites, such as CsPbCl3 , are scarcely reported because of the bad film quality of the spin-coated Cl-based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high-quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high-quality single crystal CsPbCl3 microplatelets (MPs) synthesized by a simple space-confined growth method at low temperature for near-ultraviolet (NUV) PDs are reported. The single CsPbCl3 MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 103 and a responsivity of 0.45 A W-1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 1011 Jones. Moreover, PDs possess good stability and repeatability.
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Affiliation(s)
- Pengbin Gui
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hai Zhou
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics & Electronic Science, Hubei University, Wuhan, 430062, P. R. China
| | - Fang Yao
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zehao Song
- Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Faculty of Physics & Electronic Science, Hubei University, Wuhan, 430062, P. R. China
| | - Borui Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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26
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Shkir M, Khan MT, Ashraf IM, Almohammedi A, Dieguez E, AlFaify S. High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals. Sci Rep 2019; 9:12436. [PMID: 31455774 PMCID: PMC6711974 DOI: 10.1038/s41598-019-48621-3] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2019] [Accepted: 08/08/2019] [Indexed: 11/23/2022] Open
Abstract
Herein, the optoelectrical investigation of cadmium zinc telluride (CZT) and indium (In) doped CZT (InCZT) single crystals-based photodetectors have been demonstrated. The grown crystals were configured into photodetector devices and recorded the current-voltage (I-V) and current-time (I-t) characteristics under different illumination intensities. It has been observed that the photocurrent generation mechanism in both photodetector devices is dominantly driven by a photogating effect. The CZT photodetector exhibits stable and reversible device performances to 632 nm light, including a promotable responsivity of 0.38 AW-1, a high photoswitch ratio of 152, specific detectivity of 6.30 × 1011 Jones, and fast switching time (rise time of 210 ms and decay time of 150 ms). When doped with In, the responsivity of device increases to 0.50 AW-1, photoswitch ratio decrease to 10, specific detectivity decrease to 1.80 × 1011 Jones, rise time decrease to 140 ms and decay time increase to 200 ms. Moreover, these devices show a very high external quantum efficiency of 200% for CZT and 250% for InCZT. These results demonstrate that the CZT based crystals have great potential for visible light photodetector applications.
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Affiliation(s)
- Mohd Shkir
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
| | - Mohd Taukeer Khan
- Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, 42351, Saudi Arabia
| | - I M Ashraf
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
- Department of Physics, Faculty of Science, Aswan University, Aswan, 81511, Egypt
| | - Abdullah Almohammedi
- Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, 42351, Saudi Arabia
| | - E Dieguez
- Crystal Growth Lab, Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid, 28049, Spain
| | - S AlFaify
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia.
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27
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Lin T, Wang J. Strategies toward High-Performance Solution-Processed Lateral Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901473. [PMID: 31243827 DOI: 10.1002/adma.201901473] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2019] [Revised: 04/26/2019] [Indexed: 05/26/2023]
Abstract
Due to their low cost and ease of integration, solution-processed lateral photodetectors (PDs) are becoming an important device type among the PD family. In recent years, enormous effort has been devoted to improving their performances, and great achievements have been made. A summary of the core progress, especially from the perspective of design principles and device physics, is necessary to further the development of the field, but is currently lacking. Here, to address this need, first, the working mechanism of PDs and the device figures-of-merit are introduced. Second, by classifying the active materials into four categories, including inorganic, organic, hybrid, and perovskite, the developed strategies toward high performance are discussed respectively. To close, the common physical rules behind all these strategies are generalized, and suggestions for future development are given accordingly.
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Affiliation(s)
- Tao Lin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jizheng Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
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28
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Intermediate phase-assisted solution preparation of two dimensional CsPbCl 3 perovskite for efficient ultraviolet photodetection. J Colloid Interface Sci 2019; 554:619-626. [PMID: 31336354 DOI: 10.1016/j.jcis.2019.07.044] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2019] [Revised: 07/13/2019] [Accepted: 07/16/2019] [Indexed: 11/24/2022]
Abstract
Fully-inorganic halide perovskites (HPs) have realized respectable progress in multiple optoelectronic applications. However, Cl-based fully-inorganic HPs that are ideal for ultraviolet (UV) photodetection applications in high demand still remain rarely explored mainly due to the poor solution processability compared with other counterparts. Here we propose a facile solution method to fabricate CsPbCl3 with not only high crystallinity but also a two dimensional (2D) morphology for efficient UV photodetection. 2D Ruddlesden-Popper perovskites (RPPs) are firstly prepared as the intermediate phase, which habitually grow into microplates owing to an intrinsic 2D structure. Then Cs+ was introduced in the form of highly soluble cesium acetate to exchange with the organic cations in the RPPs to produce 2D CsPbCl3 with preserved morphology and micron scale size. By this chemical route, the poor solubility issue can be addressed. All the procedures are conducted at room temperature in open air. The perfect band gap, high crystallinity and 2D morphology promise superior UV light sensing capability, one of the best overall performances featuring high responsivity, fast response speed, low driving voltages and good stability is obtained. This work is believed to fill in the "Cl-gap" for this promising class of material.
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29
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Jiang T, Shao Z, Fang H, Wang W, Zhang Q, Wu D, Zhang X, Jie J. High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24367-24376. [PMID: 31187623 DOI: 10.1021/acsami.9b03474] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from the halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nanofloating gate memories (NFGMs). CH3NH3PbBr3 nanocrystals (NCs) were uniformly decorated on the CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR/CH3NH3PbBr3 NC core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH3NH3PbBr3 NCs, the hybrid device possessed an ultralarge memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7 × 107, and a long-term air stability for 50 days. The memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.
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Affiliation(s)
- Tianhao Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Zhibin Shao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Huan Fang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Wei Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Qiao Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Di Wu
- School of Physics and Engineering, and Key Laboratory of Material Physics, Ministry of Education , Zhengzhou University , Zhengzhou , Henan 450052 , P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
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30
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Tian C, Wang F, Wang Y, Yang Z, Chen X, Mei J, Liu H, Zhao D. Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:15804-15812. [PMID: 30964633 DOI: 10.1021/acsami.9b03551] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Self-powered photodetectors (SPPDs) have attracted lots of attention due to their various advantages including no external power sources, high-sensitivity, fast response speed, and so on. This study reports the fabrication and characterization results of CsPbBr3 microcrystals (MCs) grown by chemical vapor deposition (CVD) method, and the SPPDs have been fabricated on the basis of the CsPbBr3 MCs layer with the sandwich structure of GaN/CsPbBr3 MCs/ZnO. Such designed SPPD shows the detectivity ( D*) of 1014 Jones, on/off ratio of up to 105, peak responsivity ( R) of 89.5 mA/W, and enhanced stability at the incident wavelength of 540 nm. The photodetector enables the fast photoresponse speed of 100 μs rise time and 140 μs decay time. The performances of the SPPD are comparable to the best ones ever reported for CsPbBr3 based PDs but do not need external power supplies, which mainly benefit from the low trap density, long carrier diffusion of high quality CsPbBr3MCs film, and the built-in electric fields in the sandwich structure of GaN/CsPbBr3/ZnO layers.
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Affiliation(s)
- Cancan Tian
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Fei Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
| | - Yunpeng Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
| | - Zhe Yang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Xuejiao Chen
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Jingjing Mei
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Hongzhen Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , 3888 Dongnanhu Road , Changchun 130021 , People's Republic of China
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31
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Zhang C, Luan W, Huang Y, Yang F. Growth of perovskite nanocrystals in poly-tetra fluoroethylene based microsystem: on-line and off-line measurements. NANOTECHNOLOGY 2019; 30:145602. [PMID: 30630155 DOI: 10.1088/1361-6528/aafd3b] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Cesium lead halide perovskite nanocrystals are photoelectric nanomaterials that have potential applications in a variety of areas due to their excellent photoelectric and tunable photo luminescent properties. In this work, we investigate the synergetic effects of reaction temperature, reaction-capillary length and flow rate on the growth kinetics of perovskite nanocrystals in a PTFE-based microsystem and the photoluminescence characteristics of the perovskite nanocrystals both on-line and off-line. The on-line measurement finds that increasing the reaction temperature leads to the increase of the wavelength of the PL emission peak of the synthesized nanocrystals and reduces the average size of the perovskite nanocrystals synthesized in long reaction-capillaries. The intensity of the PL emission peak of the nanocrystals synthesized at different reaction temperatures decreases with the increase of the flow rate. The off-line measurement reveals that increasing the flow rate generally leads to the blueshift of the PL emission peaks and the decrease of the average size of the perovskite nanocrystals synthesized at the reaction temperature of 160 °C in the capillary length of 60 cm. Increasing temperature leads to the increase of the emission wavelength of the perovskite nanocrystals from 560 to 608 nm. The temperature dependence of the average size of the synthesized nanocrystals with the same synthesis conditions at different temperatures can be described by the Arrhenius relationship with an activation energy of 8.54 kJ mol-1. Five different cross-sections of the synthesized perovskite nanocrystals are observed, including rhombus, hexagon, rectangle, square and quadrangle with three of them being observed for the first time.
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Affiliation(s)
- Chengxi Zhang
- Key Laboratory of Pressure Systems and Safety (MOE), School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, People's Republic of China
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Cao F, Yu D, Gu Y, Chen J, Zeng H. Novel optoelectronic rotors based on orthorhombic CsPb(Br/I) 3 nanorods. NANOSCALE 2019; 11:3117-3122. [PMID: 30702104 DOI: 10.1039/c8nr06768f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Halide perovskites (HPs) with α-phase have been intensively explored as light absorbers in solar cells, while δ-phase HPs are not suitable for photoelectric application owing to their wider bandgap and less competitive semiconducting properties. Here we propose an innovative light-controlled nanorotor based on δ-CsPb(Br/I)3 nanorods. The one-dimensional lattice structure enables habitual growth of single-crystalline nanorods upon controllable iodide incorporation. The nanorods get polarized under a rotating electric field; when light is applied, photogenerated charge carriers are populated to enhance the torque, overcoming the random Brownian motions to force the rotation of the nanorods. By loading and unloading light, the nanorotor can stably switch between the "ON" and "OFF" states, and the rotating speed can be precisely tailored by tuning the intensity of incident light. This work challenges the commonly-held perception that δ-HP is the undesirable phase, and the light-controlled rotor potentially opens up a new application for HPs.
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Affiliation(s)
- Fei Cao
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Xin B, Pak Y, Mitra S, Almalawi D, Alwadai N, Zhang Y, Roqan IS. Self-Patterned CsPbBr 3 Nanocrystals for High-Performance Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:5223-5231. [PMID: 30620549 DOI: 10.1021/acsami.8b17249] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
All-inorganic lead halide perovskites are promising materials for many optoelectronic applications. However, two issues that arise during device fabrication hinder their practical use, namely, inadequate continuity of coated inorganic perovskite films across large areas and inability to integrate these films with traditional photolithography due to poor adhesion to wafers. Herein, for the first time, to address these issues, we show a room-temperature synthesis process employed to produce CsPbBr3 perovskite nanocrystals with two-dimensional (2D) nanosheet features. Due to the unique properties of these 2D nanocrystals, including the "self-assembly" characteristic, the "double solvent evaporation inducing self-patterning" strategy is used to generate high-quality patterned thin films in selected areas automatically after drop-casting, enabling fabrication of high-performance devices without using complex and expensive fabrication processing techniques. The films are free from microcracks. In a proof-of-concept experiment, photodetector arrays are used to demonstrate the superior properties of such films. We provide evidence of both high responsivity (9.04 A/W) and high stability across large areas. The photodetectors fabricated on a flexible substrate exhibit outstanding photoresponse stability. Advanced optical and structural studies reveal the possible mechanism. Our simple and cost-effective method paves the way for the next-generation nanotechnology based on high-performance, cost-effective optoelectronic devices.
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Affiliation(s)
- Bin Xin
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Yusin Pak
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Somak Mitra
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Dhaifallah Almalawi
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
| | - Norah Alwadai
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
- Department of Physics, College of Sciences , Princess Nourah bint Abdulrahman University (PNU) , Riyadh 11671 , Saudi Arabia
| | - Yuhai Zhang
- Institute for Advanced Interdisciplinary Research (IAIR) , University of Jinan , Jinan 250022 , Shandong , China
| | - Iman S Roqan
- Physical Sciences and Engineering Division , King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900 , Saudi Arabia
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Zhao X, Liu T, Shi W, Hou X, Dennis TJS. Capillary-written single-crystalline all-inorganic perovskite microribbon arrays for highly-sensitive and thermal-stable photodetectors. NANOSCALE 2019; 11:2453-2459. [PMID: 30667445 DOI: 10.1039/c8nr08890j] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In recent times, as a result of its exceptional resistance to moisture and heat, cesium lead bromide (CsPbBr3) has been established as a potential high-performance perovskite material for optoelectronics, which is inclusive of photodetectors and photovoltaics. It has been demonstrated that a perovskite single crystal has major benefits over its thin-film equivalents; nevertheless, the preparation of perovskite crystal arrays for the utilisation of extensive integration is a challenging task. In this paper, we consider a simple crystallisation system, being a capillary-written system to enable the growth of single crystal microribbon arrays (MRAs) directly from a precursor solution. It is demonstrated by microstructure characterisation that CsPbBr3 MRAs are good-quality single crystals with highly-aligned crystal packing and smooth surfaces. The band-edge photoluminescence (PL) is exceptionally resilient and has a lengthy PL life of ∼62 ns. An exceptional photo-response having a particularly quick 99 μs response time and a 2496 A W-1 ultra-high responsivity is exhibited by photodetectors which are built upon these MRAs. The fact that the as-fabricated photodetectors maintain 90% of their commencing performance following 100 days of constant stress testing under ambient conditions under an illumination of 450 nm, showing exceptional operational stability, is noteworthy. A significant step towards the large-area growth of high-quality perovskite MRAs is presented by this work. This supplies favourable opportunities to build high-performance optoelectronic and nanophotonic systems.
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Affiliation(s)
- Xiaoming Zhao
- School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, UK.
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A facile synthesis of Au-nanoparticles decorated PbI 2 single crystalline nanosheets for optoelectronic device applications. Sci Rep 2018; 8:13806. [PMID: 30218065 PMCID: PMC6138657 DOI: 10.1038/s41598-018-32038-5] [Citation(s) in RCA: 57] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2018] [Accepted: 08/31/2018] [Indexed: 11/24/2022] Open
Abstract
This research communication presents a rapid and facile microwave-assisted synthesis of single crystalline nanosheets (SCNSs) of hexagonal lead iodide (PbI2) decorated with Au nanoparticles, a potential optoelectronics material. Homogeneous low dimensional AuNP decoration in PbI2 resulted in a new absorption band at ~604 nm and a shift in band gap from 3.23 to 3.00 eV. The significant enhancement of photoluminescent (PL) intensity observed in the AuNP-PbI2 SCNSs is attributed to the coupling of the localized surface plasmon resonanzce of AuNP leading to improved excitation and emission rates of PbI2-SCNSs in the region of the localized electromagnetic field. The Au-PbI2 SCNSs display a compelling increment in photoconductivity, and its fabricated photodetector showed a stable and switchable photo-response. Due to ease of synthesis and enhanced photoconductivity along with appealing PL features, Au-PbI2 SCNS has the potential to be used as a material of choice when fabricating an optoelectronic devices of high performance.
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Liu X, Yu D, Song X, Zeng H. Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field-Effect Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801460. [PMID: 30048037 DOI: 10.1002/smll.201801460] [Citation(s) in RCA: 43] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2018] [Revised: 05/14/2018] [Indexed: 05/12/2023]
Abstract
The past several years have witnessed tremendous developments of metal halide perovskite (MHP)-based optoelectronics. Particularly, the intensive research of MHP-based light-emitting diodes, photodetectors, and solar cells could probably reform the optoelectronic semiconductor industry. In comparison, in spite of the large intrinsic charge carrier mobility of MHPs, the development of MHP-based field-effect transistors (MHP-FETs) is relatively slow, which is essentially due to the gate-field screening effect induced by the ion migration and accumulation in MHP-FETs. This work mainly aims to summarize the recent important work on MHP-FETs and propose solutions in terms of the development bottleneck of perovskite-based transistors, in an attempt to boost the research of MHP transistors further. First, the advantages and potential applications of MHP-FETs are briefly introduced, which is followed by a detailed description of the MHP crystalline structure and various material fabrication techniques. Afterward, MHP-FETs are discussed, including transistors based on hybrid organic-inorganic perovskites, all-inorganic perovskites, and lead-free perovskites.
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Affiliation(s)
- Xuhai Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dejian Yu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Zhu J, Di Q, Zhao X, Wu X, Fan X, Li Q, Song W, Quan Z. Facile Method for the Controllable Synthesis of CsxPbyBrz-Based Perovskites. Inorg Chem 2018; 57:6206-6209. [DOI: 10.1021/acs.inorgchem.8b00645] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
- Jichao Zhu
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Qian Di
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
| | - Xixia Zhao
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
| | - Xiaotong Wu
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
| | - Xiaokun Fan
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
| | - Qian Li
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
| | - Weidong Song
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Zewei Quan
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, P. R. China
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Li L, Zhou N, Chen Q, Shang Q, Zhang Q, Wang X, Zhou H. Unraveling the Growth of Hierarchical Quasi-2D/3D Perovskite and Carrier Dynamics. J Phys Chem Lett 2018; 9:1124-1132. [PMID: 29432017 DOI: 10.1021/acs.jpclett.7b03294] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The construction of hybrid perovskites (both two-dimensional (2D) and three-dimensional (3D)) has attracted intensive research interest recently. Here, a facile, two-step consecutive deposition method was developed for the first time to grow a hierarchical quasi-2D/3D perovskite superstructure, with an oriented quasi-2D ((BA)2(MA)n-1PbnI3n+1) perovskite nanosheet (NS) perpendicularly aligned on 3D perovskites. The superstructures are found to be mixtures of multiple perovskite phases, with n = 2, 3, 4 and 3D perovskite; however, the n value was naturally increased from top to the bottom, which is distinct from many other works. We found that the concentration gradient, namely, the initial ratio and amount of BAI/MAI, collectively contributes to the spatially confined nucleation and growth of oriented quasi-2D superstructure perovskite on 3D perovskites. An efficient charge carrier transfer was demonstrated from small-n to large-n phases in this perovskite superstructure, indicating a different type of energy funnel from top to bottom.
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Affiliation(s)
- Liang Li
- Department of Physical Chemistry, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering& Department of Energy and Resources Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
| | - Ning Zhou
- Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering& Department of Energy and Resources Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
| | - Qi Chen
- School of Materials Science and Engineering, Beijing Institute of Technology , 5 Zhongguancun South Street, Beijing 100081, People's Republic of China
| | - Qiuyu Shang
- Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering& Department of Energy and Resources Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
| | - Qing Zhang
- Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering& Department of Energy and Resources Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
| | - Xindong Wang
- Department of Physical Chemistry, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Huanping Zhou
- Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering& Department of Energy and Resources Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
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Sun M, Fang Q, Zhang Z, Xie D, Sun Y, Xu J, Li W, Ren T, Zhang Y. All-Inorganic Perovskite Nanowires-InGaZnO Heterojunction for High-Performance Ultraviolet-Visible Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:7231-7238. [PMID: 29400432 DOI: 10.1021/acsami.7b17935] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Inorganic cesium lead halide perovskites have attracted intense interest in optoelectronic applications due to the relatively stable performance in air. However, most reported inorganic perovskite-based optoelectronic devices exhibit low photosensitivity, which greatly hinders their further applications. Here, we first demonstrate a hybrid optical structure, which combines the n-type thin-film InGaZnO and the all-inorganic perovskite nanowires of CsPbBr3 together. By this way, excellent optical and electrical properties such as a low dark current of 10-10 A (at -5 V), a high Iph/Idark of 1.2 × 104, a response time of 2 ms and photoresponsivity of 3.794 A/W have been obtained. It is also found that the photodetector shows good stability in air ambient for 2 months with little reduction in performance. Moreover, such hybrid photodetectors exhibit enhanced photocurrent and Iph/Idark in high-temperature environment. This work paves a new way for high-performance photodetectors and points out the possible application of the inorganic cesium lead halide perovskites in harsh environment.
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Affiliation(s)
- Mengxing Sun
- Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Qiyi Fang
- Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100084, China
| | - Zhepeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100084, China
| | - Dan Xie
- Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yilin Sun
- Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Jianlong Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, China
| | - Weiwei Li
- Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Tianling Ren
- Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100084, China
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Yang T, Zheng Y, Du Z, Liu W, Yang Z, Gao F, Wang L, Chou KC, Hou X, Yang W. Superior Photodetectors Based on All-Inorganic Perovskite CsPbI 3 Nanorods with Ultrafast Response and High Stability. ACS NANO 2018; 12:1611-1617. [PMID: 29309723 DOI: 10.1021/acsnano.7b08201] [Citation(s) in RCA: 80] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Currently, one-dimensional all-inorganic CsPbX3 (X = Br, Cl, and I) perovskites have attracted great attention, owning to their promising and exciting applications in optoelectronic devices. Herein, we reported the exploration of superior photodetectors (PDs) based on a single CsPbI3 nanorod. The as-constructed PDs had a totally excellent performance with a responsivity of 2.92 × 103 A·W-1 and an ultrafast response time of 0.05 ms, respectively, which were both comparable to the best ones ever reported for all-inorganic perovskite PDs. Furthermore, the detectivity of the PDs approached up to 5.17 × 1013 Jones, which was more than 5 times the best one ever reported. More importantly, the as-constructed PDs showed a high stability when maintained under ambient conditions.
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Affiliation(s)
- Tao Yang
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
- State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Yapeng Zheng
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
- State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Zhentao Du
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
- College of Materials Science and Engineering, Hunan University , Changsha 410082, People's Republic of China
| | - Wenna Liu
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
- State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Zuobao Yang
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
| | - Kuo-Chih Chou
- State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Xinmei Hou
- State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing , Beijing 100083, People's Republic of China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology , Ningbo 315016, People's Republic of China
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Shen Y, Yu D, Wang X, Huo C, Wu Y, Zhu Z, Zeng H. Two-dimensional CsPbBr 3/PCBM heterojunctions for sensitive, fast and flexible photodetectors boosted by charge transfer. NANOTECHNOLOGY 2018; 29:085201. [PMID: 29283889 DOI: 10.1088/1361-6528/aaa456] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Inorganic halide perovskites exhibited promising potentials for high-performance wide-band photodetectors (PDs) due to their high light absorption coefficients, long carrier diffusion length and wide light absorption ranges. Here, we report two-dimensional (2D) CsPbBr3/PCBM heterojunctions for sensitive, fast and flexible PDs, whose performances can be greatly boosted by the charge transfer through the energy-aligned interface. The 2D CsPbBr3 nanosheets with high crystallinity were fabricated via a simple solution-process at room temperature, and then assembled into flexible heterojunctions films with polymerphenyl-C61-butyric acid methyl ester (PCBM). Significantly, the efficient and fast charge transfer at the heterojunctions interface was evidenced by the obvious photoluminescence quenching and variation of recombination dynamics. Subsequently, such heterojunctions PD exhibited an enhanced responsivity of 10.85 A W-1 and an ultrahigh detectivity of 3.06 × 1013 Jones. In addition, the PD shows a broad linear dynamic range of 73 dB, a fast response speed with rise time of 44 μs and decay time of 390 μs, respectively. Moreover, the PD lying on polyethylene terephthalate substrates exhibited an outstanding mechanical flexibility and a robust electrical stability. These results could provide a new avenue for integration of 2D perovskites and organic functional materials and for high-performance flexible PDs.
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He H, Tang B, Ma Y. Controlled synthesis of quantum confined CsPbBr 3 perovskite nanocrystals under ambient conditions. NANOTECHNOLOGY 2018; 29:055601. [PMID: 29299999 DOI: 10.1088/1361-6528/aa9c08] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Room temperature recrystallization is a simple and convenient method for synthesis of all-inorganic perovskite nanomaterials with excellent luminescent properties. However, the fast crystallization usually brings the colloidal stability and uncontrollable synthesis issues in the formation of all-inorganic perovskite. In the present study, we present a new strategy to prepare the quantum confined CsPbBr3 nanocrystals with controlled morphology under ambient condition. With the assist of fatty acid-capped precursor, the crystallization and the following growth rate can be retarded. Thanks to the retarded reaction, the morphology can be varied from nanowires to nanoplates and the thickness can be controlled from 5-7 monolayers by simply adjusting the amount of octylammonium cations and oleic acid. The nanoplates exhibit a higher photoluminescence quantum yield than the nanowires possibly due to fewer defects in the nanoplates.
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Affiliation(s)
- Huimei He
- State Key Laboratory of material Processing and Die & Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
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Innovatively Continuous Mass Production Couette-taylor Flow: Pure Inorganic Green-Emitting Cs 4PbBr 6 Perovskite Microcrystal for display technology. Sci Rep 2018; 8:2009. [PMID: 29386566 PMCID: PMC5792638 DOI: 10.1038/s41598-018-20376-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2017] [Accepted: 01/17/2018] [Indexed: 11/09/2022] Open
Abstract
We report for the first time the mass production of Cs4PbBr6 perovskite microcrystal with a Couette-Taylor flow reactor in order to enhance the efficiency of the synthesis reaction. We obtained a pure Cs4PbBr6 perovskite solid within 3 hrs that then realized a high photoluminescence quantum yield (PLQY) of 46%. Furthermore, the Cs4PbBr6 perovskite microcrystal is applied with red emitting K2SiF6 phosphor on a blue-emitting InGaN chip, achieving a high-performance luminescence characteristics of 9.79 lm/W, external quantum efficiency (EQE) of 2.9%, and correlated color temperature (CCT) of 2976 K; therefore, this perovskite is expected to be a promising candidate material for applications in optoelectronic devices.
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Song X, Liu X, Yu D, Huo C, Ji J, Li X, Zhang S, Zou Y, Zhu G, Wang Y, Wu M, Xie A, Zeng H. Boosting Two-Dimensional MoS 2/CsPbBr 3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation. ACS APPLIED MATERIALS & INTERFACES 2018; 10:2801-2809. [PMID: 29280382 DOI: 10.1021/acsami.7b14745] [Citation(s) in RCA: 82] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Transition metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because of their special structures and excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr3 nanosheets with MoS2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the CsPbBr3 to the MoS2 layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MoS2/CsPbBr3. Resultantly, such a hybrid MoS2/CsPbBr3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 × 1010 Jones because of the high efficient photoexcited carrier separation at the interface of MoS2 and CsPbBr3. The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS2 device without CsPbBr3. The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.
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Affiliation(s)
- Xiufeng Song
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xuhai Liu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Dejian Yu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Chengxue Huo
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Jianping Ji
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xiaoming Li
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Shengli Zhang
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Yousheng Zou
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Gangyi Zhu
- Grünberg Research Centre, Nanjing University of Posts and Telecommunications , Nanjing 210003, China
| | - Yongjin Wang
- Grünberg Research Centre, Nanjing University of Posts and Telecommunications , Nanjing 210003, China
| | - Mingzai Wu
- School of Physics and Materials Science, Anhui University , Hefei 230601, P. R. China
| | - An Xie
- Key Laboratory of Functional Materials and Applications of Fujian Province, College of Materials Science and Engineering, Xiamen University of Technology , Xiamen 361024, P. R. China
| | - Haibo Zeng
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
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45
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Yu D, Yin C, Cao F, Zhu Y, Ji J, Cai B, Liu X, Wang X, Zeng H. Enhancing Optoelectronic Properties of Low-Dimensional Halide Perovskite via Ultrasonic-Assisted Template Refinement. ACS APPLIED MATERIALS & INTERFACES 2017; 9:39602-39609. [PMID: 29063759 DOI: 10.1021/acsami.7b12048] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Low-dimensional halide perovskite (HP) has triggered lots of research attention in recent years due to anisotropic optoelectronic/semiconducting properties and enhanced stability. High-quality low-dimensional HPs via controllable engineering are required to fulfill the encouraging promise for device applications. Here, we introduce, for the first time, postsynthetic ultrasonic-assisted refinement of two-dimensional homologous HPs (OA2PbBr4, OA is octadecylamine). The solution-prepared OA2PbBr4, either in the form of large-sized microcrystal or nanosheet, obtains significantly enhanced crystallinity after ultrasonic treatment. We further show that OA2PbBr4 nanosheets can be used as a template to construct low-dimensional CsPbBr3 with the size and morphology inherited. Importantly, we found the ultrasonic-treated OA2PbBr4 crystals, compared with pristine ones, lead to enhanced optoelectronic properties for the resultant low-dimensional CsPbBr3, as demonstrated by improved photodetection performances, including prolonged charge-carrier lifetime, improved photostability, increased external quantum yield/responsivity, and faster response speed. We believe this work provides novel engineering of low-dimensional HPs beyond the reach of straightforward synthesis.
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Affiliation(s)
- Dejian Yu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Chunyang Yin
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Fei Cao
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Ying Zhu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Jianping Ji
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Bo Cai
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xuhai Liu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China
| | - Haibo Zeng
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
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46
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Huo C, Liu X, Song X, Wang Z, Zeng H. Field-Effect Transistors Based on van-der-Waals-Grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets. J Phys Chem Lett 2017; 8:4785-4792. [PMID: 28925706 DOI: 10.1021/acs.jpclett.7b02028] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Nowadays, the research on perovskite transistors is still in its infancy, despite the fact that perovskite-based solar cells and light-emitting diodes have been widely investigated. Two major hurdles exist before obtaining reliable perovskite-based transistors: the processing difficulty for their sensitivity to polar solvents and unsatisfactory perovskite quality on the transistor platform. Here, for the first time, we report on high-performance all-inorganic perovskite FETs profiting from both van der Waals epitaxial boundary-free ultrathin single crystals and completely dry-processed transfer technique without chemical contaminant. These two crucial factors ensure the unprecedented high-quality perovskite channels. The achieved FET hole mobility and on-off ratio reach 0.32 cm2 V-1 s-1 and 6.7 × 103, respectively. Moreover, at the low temperature, the mobility and on-off ratio can be enhanced to be 1.04 cm2 V-1 s-1 and 1.3 × 104. This work could open the door for the FET applications based on perovskite single crystals.
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Affiliation(s)
- Chengxue Huo
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xuhai Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Xiufeng Song
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Ziming Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology , Nanjing 210094, China
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