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Li Y, Cui C, Wei H, Shao Z, Wu Z, Zhang S, Wang X, Pang S, Cui G. Suppressing Element Inhomogeneity Enables 14.9% Efficiency CZTSSe Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400138. [PMID: 38402444 DOI: 10.1002/adma.202400138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 02/18/2024] [Indexed: 02/26/2024]
Abstract
Kesterites, Cu2ZnSn(SxSe1- x)4 (CZTSSe), solar cells suffer from severe open-circuit voltage (VOC) loss due to the numerous secondary phases and defects. The prevailing notion attributes this issue to Sn-loss during the selenization. However, this work unveils that, instead of Sn-loss, elemental inhomogeneity caused by Cu-directional diffusion toward Mo(S,Se)2 layer is the critical factor in the formation of secondary phases and defects. This diffusion decreases the Cu/(Zn+Sn) ratio to 53% at the bottom fine-grain layer, increasing the Sn-/Zn-related bulk defects. By suppressing the Cu-directional diffusion with a blocking layer, the crystal quality is effectively improved and the defect density is reduced, leading to a remarkable photovoltaic coversion efficiency (PCE) of 14.9% with a VOC of 576 mV and a certified efficiency of 14.6%. The findings provide insights into element inhomogeneity, holding significant potential to advance the development of CZTSSe solar cells.
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Affiliation(s)
- Yimeng Li
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Changcheng Cui
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hao Wei
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhipeng Shao
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Zucheng Wu
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Shu Zhang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Xiao Wang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Shuping Pang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Guanglei Cui
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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2
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Jian Y, Han L, Kong X, Xie T, Kou D, Zhou W, Zhou Z, Yuan S, Meng Y, Qi Y, Liang G, Zhang X, Zheng Z, Wu S. Segmented Control of Selenization Environment for High-Quality Cu 2ZnSn(S,Se) 4 Films Toward Efficient Kesterite Solar Cells. SMALL METHODS 2024:e2400041. [PMID: 38766987 DOI: 10.1002/smtd.202400041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Revised: 04/28/2024] [Indexed: 05/22/2024]
Abstract
High-crystalline-quality absorbers with fewer defects are crucial for further improvement of open-circuit voltage (VOC) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. However, the preparation of high-quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single-layer thin film. The reduced evaporation area of Se in the later stage creates a soft-selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn-related deep-level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the VOC. As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low VOC deficit.
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Affiliation(s)
- Yue Jian
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes), UMR 6226, Université de Rennes, Rennes, F-35000, France
| | - Litao Han
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Xiangrui Kong
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Tianliang Xie
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Dongxing Kou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Wenhui Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Zhengji Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Shengjie Yuan
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Yuena Meng
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Yafang Qi
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
| | - Guangxing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xianghua Zhang
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes), UMR 6226, Université de Rennes, Rennes, F-35000, France
| | - Zhi Zheng
- Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province, Institute of Surface Micro and Nano Materials College of Chemical and Materials Engineering, Xuchang University, Xuchang, 461000, China
| | - Sixin Wu
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Materials, Henan University, Kaifeng, 475004, China
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3
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Wei H, Cui C, Li Y, Wu Z, Wei Y, Han Y, Han L, Lu B, Wang X, Pang S, Shao Z, Cui G. Regulating Hetero-Nucleation Enabling Over 14% Efficient Kesterite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308266. [PMID: 38100155 DOI: 10.1002/smll.202308266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 11/24/2023] [Indexed: 05/12/2024]
Abstract
Developing well-crystallized light-absorbing layers remains a formidable challenge in the progression of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. A critical aspect of optimizing CZTSSe lies in accurately governing the high-temperature selenization reaction. This process is intricate and demanding, with underlying mechanisms requiring further comprehension. This study introduces a precursor microstructure-guided hetero-nucleation regulation strategy for high-quality CZTSSe absorbers and well-performing solar cells. The alcoholysis of 2-methoxyethanol (MOE) and the generation of high gas-producing micelles by adding hydrogen chloride (HCl) as a proton additive into the precursor solution are successfully suppressed. This tailored modification of solution components reduces the emission of volatiles during baking, yielding a compact and dense precursor microstructure. The reduced-roughness surface nurtures the formation of larger CZTSSe nuclei, accelerating the ensuing Ostwald ripening process. Ultimately, CZTSSe absorbers with enhanced crystallinity and diminished defects are fabricated, attaining an impressive 14.01% active-area power conversion efficiency. The findings elucidate the influence of precursor microstructure on the selenization reaction process, paving a route for fabricating high-quality kesterite CZTSSe films and high-efficiency solar cells.
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Affiliation(s)
- Hao Wei
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Changcheng Cui
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Yimeng Li
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Zucheng Wu
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Yijin Wei
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Yaliang Han
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Lin Han
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Boyang Lu
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Xiao Wang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Shuping Pang
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Zhipeng Shao
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
| | - Guanglei Cui
- Qingdao Industrial Energy Storage Research Institute, Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Shandong Energy Institute, Qingdao, 266101, P. R. China
- Qingdao New Energy Shandong Laboratory, Qingdao, 266101, P. R. China
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4
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Park SW, He M, Jang JS, Kamble GU, Suryawanshi UP, Baek MC, Suryawanshi MP, Gang MG, Park Y, Choi HJ, Hao X, Shin SW, Kim JH. Facile Approach for Metallic Precursor Engineering for Efficient Kesterite Thin-Film Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16328-16339. [PMID: 38516946 DOI: 10.1021/acsami.4c01230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process. Specifically, Ag-included metallic precursors promote the growth of larger grains and a denser microstructure in CZTSSe thin films compared to those without Ag. Moreover, the improved uniformity of Ag, facilitated by the evaporation deposition technique, significantly suppresses the formation of detrimental defects and related defect clusters. This suppression effectively reduces nonradiative recombination, resulting in enhanced performance in kesterite TFSCs. This study not only introduces a metallic precursor engineering strategy for efficient kesterite-based TFSCs but also accelerates the development of microstructure evolution from metallic stacked precursors to metal chalcogenide compounds.
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Affiliation(s)
- Sang Woo Park
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Mingrui He
- School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, New South Wales 2052, Australia
| | - Jun Sung Jang
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Girish U Kamble
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Umesh P Suryawanshi
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Myeong Cheol Baek
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Mahesh P Suryawanshi
- School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, New South Wales 2052, Australia
| | - Myeng Gil Gang
- SCOTRA Corporation, R&D Center, Seoul 05855, South Korea
| | - Youseong Park
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Ho Jun Choi
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
| | - Xiaojing Hao
- School of Photovoltaic and Renewable Energy Engineering, UNSW Sydney, New South Wales 2052, Australia
| | - Seung Wook Shin
- Future Agricultural Research Division, Rural Research Institute, Korea Rural Community Corporation, Ansan-si 15634, South Korea
| | - Jin Hyeok Kim
- Optoelectronics Convergence Research Center and Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, South Korea
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5
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Cong J, He M, Jang JS, Huang J, Privat K, Chen Y, Li J, Yang L, Green MA, Kim JH, Cairney JM, Hao X. Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro-To-Atom Scale Characterizations. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305938. [PMID: 38342621 PMCID: PMC11022695 DOI: 10.1002/advs.202305938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 12/23/2023] [Indexed: 02/13/2024]
Abstract
Kesterite is an earth-abundant energy material with high predicted power conversion efficiency, making it a sustainable and promising option for photovoltaics. However, a large open circuit voltage Voc deficit due to non-radiative recombination at intrinsic defects remains a major hurdle, limiting device performance. Incorporating Ge into the kesterite structure emerges as an effective approach for enhancing performance by manipulating defects and morphology. Herein, how different amounts of Ge affect the kesterite growth pathways through the combination of advanced microscopy characterization techniques are systematically investigated. The results demonstrate the significance of incorporating Ge during the selenization process of the CZTSSe thin film. At high temperature, the Ge incorporation effectively delays the selenization process due to the formation of a ZnSe layer on top of the metal alloys through decomposition of the Cu-Zn alloy and formation of Cu-Sn alloy, subsequently forming of Cu-Sn-Se phase. Such an effect is compounded by more Ge incorporation that further postpones kesterite formation. Furthermore, introducing Ge mitigates detrimental "horizontal" grain boundaries by increasing the grain size on upper layer. The Ge incorporation strategy discussed in this study holds great promise for improving device performance and grain quality in CZTSSe and other polycrystalline chalcogenide solar cells.
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Affiliation(s)
- Jialin Cong
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Mingrui He
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Jun Sung Jang
- Optoelectronic Convergence Research CenterDepartment of Materials Science and EngineeringChonnam National UniversityGwangju61186South Korea
| | - Jialiang Huang
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Karen Privat
- Electron Microscope UnitMark Wainwright Analytical CentreUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Yi‐Sheng Chen
- Australian Centre for Microscopy and Microanalysis (ACMM)The University of SydneySydneyNew South Wales2006Australia
| | - Jianjun Li
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Limei Yang
- School of Civil and Environmental EngineeringUniversity of Technology SydneySydneyNew South Wales2007Australia
| | - Martin A. Green
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
| | - Jin Hyeok Kim
- Optoelectronic Convergence Research CenterDepartment of Materials Science and EngineeringChonnam National UniversityGwangju61186South Korea
| | - Julie M. Cairney
- Australian Centre for Microscopy and Microanalysis (ACMM)The University of SydneySydneyNew South Wales2006Australia
| | - Xiaojing Hao
- Australian Centre for Advanced PhotovoltaicsSchool of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNew South Wales2052Australia
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6
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Wang A, Huang J, Cong J, Yuan X, He M, Li J, Yan C, Cui X, Song N, Zhou S, Green MA, Sun K, Hao X. Cd-Free Pure Sulfide Kesterite Cu 2 ZnSnS 4 Solar Cell with Over 800 mV Open-Circuit Voltage Enabled by Phase Evolution Intervention. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307733. [PMID: 37850716 DOI: 10.1002/adma.202307733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 09/26/2023] [Indexed: 10/19/2023]
Abstract
The Cd-free Cu2 ZnSnS4 (CZTS) solar cell is an ideal candidate for producing low-cost clean energy through green materials owing to its inherent environmental friendliness and earth abundance. Nevertheless, sulfide CZTS has long suffered from severe open-circuit voltage (VOC ) deficits, limiting the full exploitation of performance potential and further progress. Here, an effective strategy is proposed to alleviate the nonradiative VOC loss by manipulating the phase evolution during the critical kesterite phase formation stage. With a Ge cap layer on the precursor, premature CZTS grain formation is suppressed at low temperatures, leading to fewer nucleation centers at the initial crystallization stage. Consequently, the CZTS grain formation and crystallization are deferred to high temperatures, resulting in enhanced grain interior quality and less unfavorable grain boundaries in the final film. As a result, a champion efficiency of 10.7% for Cd-free CZTS solar cells with remarkably high VOC beyond 800 mV (63.2% Schockley-Queisser limit) is realized, indicating that nonradiative recombination is effectively inhibited. This strategy may advance other compound semiconductors seeking high-quality crystallization.
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Affiliation(s)
- Ao Wang
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jialiang Huang
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jialin Cong
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xiaojie Yuan
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Mingrui He
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jianjun Li
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chang Yan
- Sustainable Energy and Environment Thrust, The Hong Kong University of Science and Technology Guangzhou, Guangzhou, Guangdong, 511400, China
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, SAR, 999077, P. R. China
| | - Xin Cui
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Ning Song
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shujie Zhou
- School of Chemical Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Martin A Green
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Kaiwen Sun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xiaojing Hao
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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7
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Wang Z, Meng R, Guo H, Sun Y, Xu X, Xu H, Li J, Zhang Y. Visual Color Change During Spin-coating Guiding the Quality of Cu 2 ZnSn(S,Se) 4 Films. SMALL METHODS 2023:e2300971. [PMID: 37736009 DOI: 10.1002/smtd.202300971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/08/2023] [Indexed: 09/23/2023]
Abstract
Solution method provides a low-cost and environmentally friendly route for the fabrication of Cu2 ZnSn(S,Se)4 (CZTSSe) thin-film solar cells. However, uncontrollable quality of the CZTSSe absorber layer will severely limit the device's performance. In this study, it is find that the thickness and the quality of the formed precursor is not stable because of the variation of the viscosity of the precursor solution. Combined by different characterization methods, the results disclose that such change is strongly related to the reflected color of the first coating layer during precursor growth. Further studies disclose that only by maintaining the appropriate reflected color can a well-crystallized CZTSSe film be prepared, thereby obtaining good solar cell efficiency. This semi-empirical pattern is confirmed by thin-film interference theory. Under the guidance of this method, CZTSSe absorbers with high quality are obtained easily, and the highly efficient CZTSSe solar cell can be fabricated easily. This study provides a feasible and effective strategy to obtain the optimal structure and composition of CZTSSe film toward the production of highly efficient kesterite solar cells, which can also be widely applied to the preparation of other films by solution-based method.
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Affiliation(s)
- Zuoyun Wang
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Rutao Meng
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Hongling Guo
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yali Sun
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Xuejun Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Han Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Jianpeng Li
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
| | - Yi Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, and Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin, 300350, P. R. China
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8
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Wang L, Wang Y, Zhou Z, Zhou W, Kou D, Meng Y, Qi Y, Yuan S, Han L, Wu S. Progress and prospectives of solution-processed kesterite absorbers for photovoltaic applications. NANOSCALE 2023; 15:8900-8924. [PMID: 37129945 DOI: 10.1039/d3nr00218g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Solar cells based on emerging kesterite Cu2ZnSn(S,Se)4 (CZTSSe) materials have reached certified power conversion efficiency (PCE) as high as 13.6%, showing great potential in the next generation of photovoltaic technologies because of their earth-abundant, tunable direct bandgap, high optical absorption coefficient, environment-friendly, and low-cost properties. The predecessor of CZTSSe is Cu(In,Ga) Se2 (CIGS), and the highest PCE of CIGS fabricated by the vacuum method is 23.35%. However, the recorded PCE of CZTSSe devices are fabricated by a low-cost solution method. The characteristics of the solvent play a key role in determining the crystallization kinetics, crystal growth quality, and optoelectronic properties of the CZTSSe thin films in the solution method. It is still challenging to improve the efficiency of CZTSSe solar cells for future commercialization and applications. This review describes the current status of CZTSSe solar cell absorbers fabricated by protic solvents with NH (hydrazine), protic solvents with SH (amine-thiol), aprotic solvents (DMSO and DMF), ethylene glycol methyl ether-based precursor solution method (EGME), and thioglycolic acid (TGA)-ammonia solution (NH3H2O) deposition methods. Furthermore, the performances of vacuum-deposited devices and solution-based processed devices are compared. Finally, the challenges and outlooks of CZTSSe solar cells are discussed for further performance improvement.
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Affiliation(s)
- Lijing Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Yufei Wang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Zhengji Zhou
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Wenhui Zhou
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Dongxing Kou
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Yuena Meng
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Yafang Qi
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Shengjie Yuan
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Litao Han
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
| | - Sixin Wu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng, 475004, China.
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9
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Yuan X, Li J, Huang J, Yan C, Cui X, Sun K, Cong J, He M, Wang A, He G, Mahboubi Soufiani A, Jiang J, Zhou S, Stride JA, Hoex B, Green M, Hao X. 10.3% Efficient Green Cd-Free Cu 2 ZnSnS 4 Solar Cells Enabled by Liquid-Phase Promoted Grain Growth. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204392. [PMID: 36319478 DOI: 10.1002/smll.202204392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Revised: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Small grain size and near-horizontal grain boundaries are known to be detrimental to the carrier collection efficiency and device performance of pure-sulfide Cu2 ZnSnS4 (CZTS) solar cells. However, forming large grains spanning the absorber layer while maintaining high electronic quality is challenging particularly for pure sulfide CZTS. Herein, a liquid-phase-assisted grain growth (LGG) model that enables the formation of large grains spanning across the CZTS absorber without compromising the electronic quality is demonstrated. By introducing a Ge-alloyed CZTS nanoparticle layer at the bottom of the sputtered precursor, a Cu-rich and Sn-rich liquid phase forms at the high temperature sulfurization stage, which can effectively remove the detrimental near-horizontal grain boundaries and promote grain growth, thus greatly improving the carrier collection efficiency and reducing nonradiative recombination. The remaining liquid phase layer at the rear interface shows a high work function, acting as an effective hole transport layer. The modified morphology greatly increases the short-circuit current density and fill factor, enabling 10.3% efficient green Cd-free CZTS devices. This work unlocks a grain growth mechanism, advancing the morphology control of sulfide-based kesterite solar cells.
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Affiliation(s)
- Xiaojie Yuan
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jianjun Li
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jialiang Huang
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chang Yan
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Sustainable Energy and Environment Thurst, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou, Guangdong, 511400, China
| | - Xin Cui
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Kaiwen Sun
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jialin Cong
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Mingrui He
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Ao Wang
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Guojun He
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Arman Mahboubi Soufiani
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Junjie Jiang
- School of Chemical Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shujie Zhou
- School of Chemical Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - John A Stride
- School of Chemistry, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Bram Hoex
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Martin Green
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xiaojing Hao
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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10
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Guo J, Mao Y, Ao J, Han Y, Cao C, Liu F, Bi J, Wang S, Zhang Y. Microenvironment Created by SnSe 2 Vapor and Pre-Selenization to Stabilize the Surface and Back Contact in Kesterite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203354. [PMID: 36180408 DOI: 10.1002/smll.202203354] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 09/11/2022] [Indexed: 06/16/2023]
Abstract
The ambient air-processed preparation of kesterite Cu2 ZnSn(S,Se)4 (CZTSSe) thin film is highly promising for the fabrication of low-cost and eco-friendly solar cells. However, the Sn volatilization loss and formation of a thick Mo(S,Se)2 interfacial layer during the traditional selenization process pose challenges for fabricating high-efficiency CZTSSe solar cells. Here, CZTS precursors prepared by a sol-gel process in ambient air are selenized and assisted with SnSe2 vapor via one- and two-step selenization to prepare a CZTSSe absorber on a Mo film and, subsequently, solar cells. For one-step selenization, the thickness of the fine grain and Mo(S,Se)2 layers near the back contact can be significantly reduced with increasing SnSe2 vapor partial pressure in the mixed selenization atmosphere, while the device efficiency is only 7.97% due to the severe interface recombination. For two-step selenization, the desired morphology and stoichiometry of the absorber can be achieved through the assistance of Sn-poor precursors selenized with high SnSe2 vapor partial pressure to regulate the Sn content in CZTSSe, yielding the highest efficiency of 10.85%. This study improves the understanding of the key role of the microenvironment during film growth towards the production of high-efficiency thin film solar cells and other photoelectronic devices.
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Affiliation(s)
- Jiajia Guo
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Yang Mao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Jianping Ao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Yanchen Han
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Chun Cao
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Fangfang Liu
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
| | - Jinlian Bi
- Tianjin Key Laboratory of Film Electronic and Communication Devices School of Integrated Circuit Science and Engineering, Tianjin University of Technology, 391 Binshui West Road, Xiqing District, Tianjin, 300384, P. R. China
| | - Shenghao Wang
- Materials Genome Institute, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai, 200444, P. R. China
| | - Yi Zhang
- Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology and Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, 38 Tongyan Road, Haihe Education Park, Tianjin, 300350, P. R. China
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11
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Gao Q, Yuan S, Zhou Z, Kou D, Zhou W, Meng Y, Qi Y, Han L, Wu S. Over 16% Efficient Solution-Processed Cu(In,Ga)Se 2 Solar Cells via Incorporation of Copper-Rich Precursor Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203443. [PMID: 36026573 DOI: 10.1002/smll.202203443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Revised: 08/08/2022] [Indexed: 06/15/2023]
Abstract
Solution processing of Cu(In,Ga)Se2 (CIGS) absorber is a highly promising strategy for a cost-effective CIGS photovoltaic device. However, the device performance of solution-processed CIGS solar cells is still hindered by the severe non-radiative recombination resulting from deep defects and poor crystal quality. Here, a simple and effective precursor film engineering strategy is reported, where Cu-rich (CGI >1) CIGS layer is incorporated into the bottom of the CIGS precursor film. It has been discovered that the incorporation of the Cu-rich CIGS layer greatly improves the absorber crystallinity and reduces the trap state density. Accordingly, more efficient charge generation and charge transfer are realized. As a result of systematic processing optimization, the champion solution-processed CIGS device delivers an improved open-circuit voltage of 656 mV, current density of 33.15 mA cm-2 , and fill factor of 73.78%, leading to the high efficiency of 16.05%.
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Affiliation(s)
- Qianqian Gao
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Shengjie Yuan
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Zhengji Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Dongxing Kou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Wenhui Zhou
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Yuena Meng
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Yafang Qi
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Litao Han
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
| | - Sixin Wu
- Key Laboratory for Special Functional Materials of MOE, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng, 475004, China
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12
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Zhao B, Deng Y, Cao L, Zhu J, Zhou Z. Doping of Sb into Cu2ZnSn(S,Se)4 absorber layer via Se&Sb2Se3 co-selenization strategy for enhancing open-circuit voltage of kesterite solar cells. Front Chem 2022; 10:974761. [PMID: 36017168 PMCID: PMC9395640 DOI: 10.3389/fchem.2022.974761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 07/12/2022] [Indexed: 11/13/2022] Open
Abstract
Kesterite-structured Cu2ZnSn(S,Se)4 (CZTSSe) thin film photovoltaics have attracted considerable attention in recent years because of its low-cost and eco-friendly raw material, as well as high theoretical conversion efficiency. However, its photovoltaic performance is hindered by large open-circuit voltage (VOC) deficiency due to the presence of intrinsic defects and defect clusters in the bulk of CZTSSe absorber films. The doping of extrinsic cation to the CZTSSe matrix was adopted as an effective strategy to ameliorate defect properties of the solar cell absorbers. Herein, a novel Se&Sb2Se3 co-selenization process was employed to introduce Sb into CZTSSe crystal lattice. The results reveal that Sb-doping plays an active role in the crystallization and grain growth of CZTSSe absorber layer. More importantly, one of the most seriously detrimental SnZn deep defect is effectively passivated, resulting in significantly reduced deep-level traps and band-tail states compared to Sb free devices. As a result, the power conversion efficiency of CZTSSe solar cell is increased significantly from 9.17% to 11.75%, with a VOC especially enlarged to 505 mV from 449 mV. This insight provides a deeper understanding for engineering the harmful Sn-related deep defects for future high-efficiency CZTSSe photovoltaic devices.
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Affiliation(s)
- Benhui Zhao
- Miami College of Henan University, Kaifeng, China
| | - Yueqing Deng
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
| | - Lei Cao
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
| | - Jichun Zhu
- Miami College of Henan University, Kaifeng, China
- *Correspondence: Jichun Zhu, ; Zhengji Zhou,
| | - Zhengji Zhou
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, and School of Materials, Henan University, Kaifeng, China
- *Correspondence: Jichun Zhu, ; Zhengji Zhou,
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