Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite

A Diamond-Based Neuromorphic Retina Perception System with Wide Spectrum Photoresponse and Wavelength Sensitivity

Diamond, an important electronic and optoelectronic material, exhibits excellent performance in deep ultraviolet photodetection. However, its lack of visible light response and nonvolatile photocurrent hinders its application in neuromorphic sensors that mimic the human eye. In this work, we report a diamond-based neuromorphic retina perception system (NRPS) that demonstrates broad-spectrum photoresponse beyond the human visual range, nonvolatile photocurrent, and wavelength sensitivity. This outcome is achieved by introducing a large number of defects and doping states into the diamond film through heteroepitaxial growth on the SiO2 substrate and Si doping. By adjusting the input light and electrical stimulation, human eye's pupil and image memory behavior are successfully simulated. More interestingly, the diamond NRPS exhibits a significant difference in the decay characteristic of photocurrent under different wavelengths of illumination. Based on this characteristic, the NRPS achieves recognition of unknown colors and trajectory tracking of dynamic light dots. Furthermore, the image recognition accuracy is improved from 67.5% to 81.7% by filtering the visible light information and extracting useful ultraviolet light information with the device. This study offers an effective strategy to develop a diamond-based neuromorphic sensor.

Optoelectronic Artificial Synapses Based on ZnO/Nanoporous Hybrid Thin Film by Atomic/Molecular Layer Deposition

An optoelectronic artificial synapse device has been established based on ZnO/Zn-HQ nanoporous hybrid thin films by atomic/molecular layer deposition. This unique nanoporous microstructure in devices significantly enhances the optoelectronic response and relaxation time, enabling important biosynaptic functions under optical stimuli, such as Pavlov's dog experiment and pattern recognition. The mechanism of ionization-deionization of oxygen vacancies has been proposed for this device.

Advances in perovskite-based neuromorphic computing devices

Neuromorphic computing devices, inspired by the architecture and functionality of the human brain, offer a promising solution to the limitations imposed by the von Neumann bottleneck on contemporary computing systems. Perovskite materials are widely used in the photosensitive layer of neuromorphic computing devices due to their high light absorption coefficient and excellent carrier mobility. Here, we summarise the latest research progress on neural morphology computing devices based on perovskite materials with different structures and summarise different application scenarios. Finally, we discussed the issues that still need to be addressed and looked forward to the future development of neural morphology calculations based on perovskite materials.

Optoelectronic synapses realized on large-scale continuous MoSe2 with Te doping induced tunable memory functions

Synaptic devices with integrated sensing-computing-storage functions are emerging as promising technological solutions to break the memory wall in the von Neuman architecture computing system. 2D semiconductors are ideal candidate materials for artificial synapses due to their superior electronic and optoelectronic properties. In this work, we report robust optoelectronic synapses realized on wafer-scale continuous MoSe2 with Te-doping-induced tunable memory functions. A unique defect engineering strategy of substitutional doping of Te has been adopted to induce Se vacancies in chemical vapour deposition grown MoSe2 films. These vacancies introduce defect states as deep trap levels in the band gap, enabling efficient charge trapping and significantly prolonging the decaying time. The presence of Te doping and Se vacancies was confirmed by PL, Raman, and XPS characterization. Ultra-high vacuum stencil lithography technique has been adopted for the fabrication of arrayed optoelectronic devices that exhibit prominent excitatory postsynaptic currents with the paired-pulse facilitation up to 197% under ultraviolet illumination. Therefore, essential synaptic behaviors like the spike-number-, spike-rate-, and spike-intensity-dependent plasticity have been demonstrated, along with the in-sensor computation application of hardware image sharpening capability. This work offers a new method of vacancy engineering in large-scale 2D semiconductors for future application in integrated neuromorphic devices.

Improving ion uptake in artificial synapses through facilitated diffusion mechanisms

Several studies have explored ways to enhance the interaction between the channel layer and ions to realize artificial synapses using organic electrochemical transistors (OECTs). The attachment of glycol side chains can remarkably enhance the ion transport to improve nonvolatile properties via polar groups; however, a comprehensive and methodical evaluation of this phenomenon has yet to be conducted. In this study, we observed the reactivity toward ions and the doping mechanism that changes by glycol group substitution to the side chains of DPP polymers. The analysis revealed that in the presence of glycol chains, the doping mechanism changes to diffusion-dominated, which allows ions to penetrate the channel and interact with it more intensely, thereby enhancing synaptic performance. The fabricated devices successfully mimicked the behavior of biological synapses, such as good long-term synaptic plasticity (LTP), paired-pulse facilitation (PPF), and long-term potentiation/depression (LTP/D). Based on these properties, a high accuracy of 93.7% has been achieved in an artificial neural network for handwritten data recognition at the Modified national institute of standards and technology (MNIST). These findings provide new insights for the realization of artificial synapses and could inspire other research involving reactions with ions.

Ta2PdS6/MoS2 Heterojunction Phototransistor for High-Performance Photoelectric Synapses and Graphic Identification

Artificial synapses and neurons with efficient, high-speed, and highly parallel information processing capabilities are considered to be a new direction for the next generation of learning, cognition, and data storage. In this work, we have integrated photodetectors and photoelectric synapse in Ta2PdS6/MoS2 van der Waals heterostructures, which can be used in photodetection and optical artificial neural networks. We have systematically studied the photoelectric characteristics of the blue-violet to near-infrared (405 ∼ 1550 nm) band. At 633 nm, the responsivity and specific detectivity are as high as 590.36 AW-1 and 5.63 × 1011 Jones, respectively. In addition, the heterojunction acquired a persistent photoconductivity behavior due to the presence of interfacial defect states, which was used to simulate the synaptic properties of the human brain, such as transition from short-term memory to long-term memory, paired-pulse facilitation, "learning-forgetting-relearning" behavior, and excitatory-postsynaptic current. In addition, on the basis of photoelectric synapse, the recognition of handwritten digits with different noise levels by an artificial neural network was simulated, which shows a high training accuracy (90%). This study lays a foundation for the development of high-performance heterojunctions and artificial synapses using two-dimensional materials.

Ultralow Power Optoelectronic Memtransistors Based on Vertical WS2/In2Se3 van der Waals Heterostructures

Memtransistors composed of 2D van der Waals (vdW) heterostructures are crucial for constructing artificial synaptic devices and realizing neuromorphic computing. The functional integration containing ultralow power, nonvolatile memory, and biomimetic synaptic behavior endows such devices with broad prospects. Here, we develop an optoelectronic memtransistor based on the WS2/In2Se3 vdW heterostructure and realize significant optical and electrical synaptic properties, which can simulate both short-range plasticity (STP) and long-range plasticity (LTP) of biological synapses. Under optical stimulation, the device demonstrates an ultralow power consumption (only 7.7 aJ per spike) significantly lower than biological synapses, indicating the application potential in large-scale neuromorphic hardware. Combining optical and electrical stimuli, we can perform multiple logic operations by controlling the optical and electrical inputs of the WS2/In2Se3-based memtransistor. Besides, simulated recognition utilizing the Modified National Institute of Standards and Technology data set can achieve a recognition accuracy of 85.41%. Notably, this accuracy can remain above 80% even with the introduction of Gaussian noise. These results demonstrate the promising potential of WS2/In2Se3-based memtransistors in future neuromorphic computing.

Ultra-Low Power Consumption Artificial Photoelectric Synapses Based on Lewis Acid Doped WSe2 for Neuromorphic Computing

Capitalizing on the extensive spectral capacity and minimal crosstalk properties inherent in optical signals, photoelectric synapses are poised to assume a pivotal stance in the realm of neuromorphic computation. Herein, a photoelectric synapse based on Lewis acid-doped semiconducting tungsten diselenide (WSe2) is introduced, exhibiting tunable short-term and long-term plasticity. The device consumes a mere 0.1 fJ per synaptic operation, which is lower than the energy required by a single synaptic event observed in the human brain. Furthermore, these devices demonstrate high-pass filtering capabilities, highlighting their potential in image-sharpening applications. In particular, by synergistically modulating the photoconductivity and electrical gate bias, versatile logic capabilities are demonstrated within a single device, enabling it to flexibly perform both Boolean AND and OR gate operations. This work demonstrates a viable approach for Lewis acid-treated TMDs to realize multifunctional photoelectric synapses for neuromorphic computing.

Dual-functional GaN photodiode for photodetection and neuromorphic computing with high specific detectivity

The discrepancy in the photoresponse characteristics between photodetectors (PDs) and photosynapses is posing a challenge for integrating the two functions into a single device. In this work, a photodetector integrated with neuromorphic capabilities is demonstrated. Under the joint action of the photovoltaic effect and photoconductive effect, the proposed device can switch between the photodetector and photosynapse by simply altering the polarity of bias voltage. Under a reverse or zero bias voltage, the device operates as a photodetector with low dark current and high specific detectivity. On the other hand, when a positive bias voltage is applied, the device showcases synaptic functionalities such as excitatory postsynaptic current, paired-pulse facilitation, and transition from short-term memory to long-term memory. The dual-functional devices hold promise for weak light detection and neuromorphic computing in complex environments.

Tailored Environment-Friendly Reverse Type-I Colloidal Quantum Dots for a Near-Infrared Optical Synapse and Artificial Vision System

Colloidal quantum dots (QDs) are emerging as potential candidates for constructing near-infrared (NIR) photodetectors (PDs) and artificial optoelectronic synapses due to solution processability and a tunable bandgap. However, most of the current NIR QDs-optoelectronic devices are still fabricated using QDs with incorporated harmful heavy metals of lead (Pb) and mercury (Hg), showing potential health and environment risks. In this work, we tailored eco-friendly reverse type-I ZnSe/InP QDs by copper (Cu) doping and extended the photoresponse from the visible to NIR region. Transient absorption spectroscopy analysis revealed the presence of Cu dopant states in ZnSe/InP:Cu QDs that facilitated the extraction of photogenerated charge carriers, leading to an enhanced photodetection performance. Specifically, under 400 nm illumination, the Cu-doped ZnSe/InP QDs-based PDs presented a broadband photodetection ranging from ultraviolet (UV) to NIR, with a responsivity of 70.5 A W-1 and detectivity of 2.8 × 1011 Jones, surpassing those of the undoped ZnSe/InP QDs-based PDs (49.4 A W-1 and 1.9 × 1011 Jones, respectively). More importantly, the ZnSe/InP:Cu QDs-PDs demonstrated various synapse-like characteristics of short-term plasticity (STP), long-term plasticity (LTP), and learning-forging-relearning under NIR light illumination, which were further used to construct PD array devices for simulating the artificial visual system that is available in prospective optical neuromorphic applications.

Optical Bio-Inspired Synaptic Devices

The traditional computer with von Neumann architecture has the characteristics of separate storage and computing units, which leads to sizeable time and energy consumption in the process of data transmission, which is also the famous "von Neumann storage wall" problem. Inspired by neural synapses, neuromorphic computing has emerged as a promising solution to address the von Neumann problem due to its excellent adaptive learning and parallel capabilities. Notably, in 2016, researchers integrated light into neuromorphic computing, which inspired the extensive exploration of optoelectronic and all-optical synaptic devices. These optical synaptic devices offer obvious advantages over traditional all-electric synaptic devices, including a wider bandwidth and lower latency. This review provides an overview of the research background on optoelectronic and all-optical devices, discusses their implementation principles in different scenarios, presents their application scenarios, and concludes with prospects for future developments.

Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy-Efficient Neuromorphic Optical Operation

The optoelectronic synaptic transistors with various functions, broad spectral perception, and low power consumption are an urgent need for the development of advanced optical neural network systems. However, it remains a great challenge to realize the functional diversification of the systems on a single device. 2D van der Waals (vdW) materials can combine unique properties by stacking with each other to form heterojunctions, which may provide a strategy for solving this problem. Herein, an all-2D vdW heterojunction-based programmable optoelectronic synaptic transistor based on MoS2/Ta2NiS5 heterojunctions is demonstrated. The device implements reconfigurable, multilevel non-volatile memory (NVM) states through sequential modulation of multiple optical and electrical stimuli to achieve broadband (532-808 nm), energy-efficient (17.2 fJ), hetero-synaptic functionality in a bionic manner. The intrinsic working mechanisms of the photogating effect caused by band alignment and the interfacial trapping defect modulation induced by gate voltage are revealed by Kelvin-probe force microscopy (KPFM) measurements and carrier transport analysis. Overall, the (opto)electronic synaptic weight controllability for combined in-sensor and in-memory logic processors is realized by the heterojunction properties. The proposed findings facilitate the technical realization of generic all 2D hetero-synapses for future artificial vision systems, opto-logical systems, and Internet of Things (IoT) entities.

Multimodal Artificial Synapses for Neuromorphic Application

The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.

A high-performance organic lithium salt-doped OFET with the optical radical effect for photoelectric pulse synaptic simulation and neuromorphic memory learning

Simulation of synaptic characteristics is essential for the application of organic field effect transistors (OFETs) in neural morphology. Although excellent performance, including bias stability and mobility, as well as photoelectric pulse synaptic simulation, has been achieved in SiO2-gated OFETs with PDVT-10 as an organic channel, there are relatively few studies on photoelectric pulse synaptic simulation of electrolyte-gated OFETs based on environmentally friendly and low-voltage operation. Herein, synaptic transistors based on organic semiconductors are reported to simulate the photoelectric pulse response by developing solution-based organic semiconductor PDVT-10, and polyvinyl alcohol (PVA) with an electric double layer (EDL) effect to act as a channel and gate dielectric layer, respectively, and organic lithium salt-doped PVA is used to enhance the EDL effect. The presence of electrical pulses in doped devices not only achieves basic electrical synaptic characteristics, but also significantly realizes the long-term characteristics, pain perception, memory and sensitization applications. Furthermore, the introduction of photoinitiator molecules into the channel layer leads to improved photosynaptic performances by using light-induced free radicals, and the photoelectric synergistic effect has been actualized by introducing heterojunction architecture. This work provides promising prospects for achieving photoelectric pulse modulation based on organic synaptic devices, which shows great potential for the development of artificial intelligence.

Centimeter-Scale Tellurium Oxide Films for Artificial Optoelectronic Synapses with Broadband Responsiveness and Mechanical Flexibility

Prevailing over the bottleneck of von Neumann computing has been significant attention due to the inevitableness of proceeding through enormous data volumes in current digital technologies. Inspired by the human brain's operational principle, the artificial synapse of neuromorphic computing has been explored as an emerging solution. Especially, the optoelectronic synapse is of growing interest as vision is an essential source of information in which dealing with optical stimuli is vital. Herein, flexible optoelectronic synaptic devices composed of centimeter-scale tellurium dioxide (TeO2) films detecting and exhibiting synaptic characteristics to broadband wavelengths are presented. The TeO2-based flexible devices demonstrate a comprehensive set of emulating basic optoelectronic synaptic characteristics; i.e., excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), conversion of short-term to long-term memory, and learning/forgetting. Furthermore, they feature linear and symmetric conductance synaptic weight updates at various wavelengths, which are applicable to broadband neuromorphic computations. Based on this large set of synaptic attributes, a variety of applications such as logistic functions or deep learning and image recognition as well as learning simulations are demonstrated. This work proposes a significant milestone of wafer-scale metal oxide semiconductor-based artificial synapses solely utilizing their optoelectronic features and mechanical flexibility, which is attractive toward scaled-up neuromorphic architectures.

Human somatosensory systems based on sensor-memory-integrated technology

As a representative artificial neural network (ANN) for incorporating sensing functions and memory functions into one system to achieve highly miniaturized and highly integrated devices or systems, artificial sensory systems (ASSs) can have a far-reaching influence on precise instrumentation, sensing, and automation engineering. Artificial sensory systems have enjoyed considerable progress in recent years, from low degree integrations to highly advanced sophisticated integrations, from single-modal perceptions to multimode-fused perceptions. However, there are issues around the large hardware area, power consumption, and communication bandwidth needed during the processes where multimodal sensing signals are converted into a digital mode before they can be processed by a digital processor. Therefore, deepening the research into sensory integration is of great importance. In this review, we briefly introduce fundamental knowledge about the memristor mechanism, describe some representative human somatosensory systems, and elucidate the relationship between the properties of memristor devices and the structure. The electronic character of the sensors, future prospects, and key challenges surrounding sensor-memory integrated technologies are also discussed.

Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications

Manipulating the expression of synaptic plasticity of neuromorphic devices provides fascinating opportunities to develop hardware platforms for artificial intelligence. However, great efforts have been devoted to exploring biomimetic mechanisms of plasticity simulation in the last few years. Recent progress in various plasticity modulation techniques has pushed the research of synaptic electronics from static plasticity simulation to dynamic plasticity modulation, improving the accuracy of neuromorphic computing and providing strategies for implementing neuromorphic sensing functions. Herein, several fascinating strategies for synaptic plasticity modulation through chemical techniques, device structure design, and physical signal sensing are reviewed. For chemical techniques, the underlying mechanisms for the modification of functional materials were clarified and its effect on the expression of synaptic plasticity was also highlighted. Based on device structure design, the reconfigurable operation of neuromorphic devices was well demonstrated to achieve programmable neuromorphic functions. Besides, integrating the sensory units with neuromorphic processing circuits paved a new way to achieve human-like intelligent perception under the modulation of physical signals such as light, strain, and temperature. Finally, considering that the relevant technology is still in the basic exploration stage, some prospects or development suggestions are put forward to promote the development of neuromorphic devices.

Spacer Engineering Enables Fine-Tuned Thin Film Microstructure and Efficient Charge Transport for Ultrasensitive 2D Perovskite-Based Heterojunction Phototransistors and Optoelectronic Synapses

2D Ruddlesden-Popper phase layered perovskites (RPLPs) hold great promise for optoelectronic applications. In this study, a series of high-performance heterojunction phototransistors (HPTs) based on RPLPs with different organic spacer cations (namely butylammonium (BA+), cyclohexylammonium (CyHA+), phenethylammonium (PEA+), p-fluorophenylethylammonium (p-F-PEA+), and 2-thiophenethylammonium (2-ThEA+)) are fabricated successfully, in which high-mobility organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene is adopted to form type II heterojunction channels with RPLPs. The 2-ThEA+-RPLP-based HPTs show the highest photosensitivity of 3.18 × 107 and the best detectivity of 9.00 × 1018 Jones, while the p-F-PEA+-RPLP-based ones exhibit the highest photoresponsivity of 5.51 × 106 A W-1 and external quantum efficiency of 1.32 × 109%, all of which are among the highest reported values to date. These heterojunction systems also mimicked several optically controllable fundamental characteristics of biological synapses, including excitatory postsynaptic current, paired-pulse facilitation, and the transition from short-term memory to long-term memory states. The device based on 2-ThEA+-RPLP film shows an ultra-high PPF index of 234%. Moreover, spacer engineering brought fine-tuned thin film microstructures and efficient charge transport/transfer, which contributes to the superior photodetection performance and synaptic functions of these RPLP-based HPTs. In-depth structure-property correlations between the organic spacer cations/RPLPs and thin film microstructure/device performance are systematically investigated.

Technology and Integration Roadmap for Optoelectronic Memristor

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.

Humidity/Oxygen-Insensitive Organic Synaptic Transistors Based on Optical Radical Effect

For most organic synaptic transistors based on the charge trapping effect, different atmosphere conditions lead to significantly different device performance. Some devices even lose the synaptic responses under vacuum or inert atmosphere. The stable device performance of these organic synaptic transistors under varied working environments with different humidity and oxygen levels can be a challenge. Herein, a moisture- and oxygen-insensitive organic synaptic device based on the organic semiconductor and photoinitiator molecules is reported. Unlike the widely reported charge trapping effect, the photoinduced free radical is utilized to realize the photosynaptic performance. The resulting synaptic transistor displays typical excitatory postsynaptic current, paired-pulse facilitation, learning, and forgetting behaviors. Furthermore, the device exhibits decent and stable photosynaptic performances under high humidity and vacuum conditions. This type of organic synaptic device also demonstrates high potential in ultraviolet B perception based on its environmental stability and broad ultraviolet detection capability. Finally, the contrast-enhanced capability of the device is successfully validated by the single-layer-perceptron/double-layer network based Modified National Institute of Standards and Technology pattern recognition. This work could have important implications for the development of next-generation environment-stable organic synaptic devices and systems.

Organic High-Temperature Synaptic Phototransistors for Energy-Efficient Neuromorphic Computing

Organic optoelectronic synaptic devices that can reliably operate in high-temperature environments (i.e., beyond 121°C) or remain stable after high-temperature treatments have significant potential in biomedical electronics and bionic robotic engineering. However, it is challenging to acquire this type of organic devices considering the thermal instability of conventional organic materials and the degradation of photoresponse mechanisms at high temperatures. Here, high-temperature synaptic phototransistors (HTSPs) based on thermally stable semiconductor polymer blends as the photosensitive layer are developed, successfully simulating fundamental optical-modulated synaptic characteristics at a wide operating temperature range from room temperature to 220°C. Robust optoelectronic performance can be observed in HTSPs even after experiencing 750 h of the double 85 testing due to the enhanced operational reliability. Using HTSPs, Morse-code optical decoding scheme and the visual object recognition capability are also verified at elevated temperatures. Furthermore, flexible HTSPs are fabricated, demonstrating an ultralow power consumption of 12.3 aJ per synaptic event at a low operating voltage of -0.05 mV. Overall, the conundrum of achieving reliable optical-modulated neuromorphic applications while balancing low power consumption can be effectively addressed. This research opens up a simple but effective avenue for the development of high-temperature and energy-efficient wearable optoelectronic devices in neuromorphic computing applications.

In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfOx-Based Neuristor Array

With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due to cumbersome data interactions among sensory, memory, and computing modules. Heterogeneous integration methods such as chiplet technology can significantly reduce unnecessary data movement; however, they fail to address the fundamental issue of the substantial time and energy overheads resulting from the physical separation of computing and sensory components. Brain-inspired in-sensor neuromorphic computing (ISNC) has plenty of room for such data-intensive applications. However, one key obstacle in developing ISNC systems is the lack of compatibility between material systems and manufacturing processes deployed in sensors and computing units. This study successfully addresses this challenge by implementing fully CMOS-compatible TiN/HfOx-based neuristor array. The developed ISNC system demonstrates several advantageous features, including multilevel analogue modulation, minimal dispersion, and no significant degradation in conductance (@125 °C). These characteristics enable stable and reproducible neuromorphic computing. Additionally, the device exhibits modulatable sensory and multi-store memory processes. Furthermore, the system achieves information recognition with a high accuracy rate of 93%, along with frequency selectivity and notable activity-dependent plasticity. This work provides a promising route to affordable and highly efficient sensory neuromorphic systems.

Silicon-Nanomembrane-Based Broadband Synaptic Phototransistors for Neuromorphic Vision

Neuromorphic vision has been attracting much attention due to its advantages over conventional machine vision (e.g., lower data redundancy and lower power consumption). Here we develop synaptic phototransistors based on the silicon nanomembrane (Si NM), which are coupled with lead sulfide quantum dots (PbS QDs) and poly(3-hexylthiophene) (P3HT) to form a heterostructure with distinct photogating. Synaptic phototransistors with optical stimulation have outstanding synaptic functionalities ranging from ultraviolet (UV) to near-infrared (NIR). The broadband synaptic functionalities enable an array of synaptic phototransistors to achieve the perception of brightness and color. In addition, an array of synaptic phototransistors is capable of simultaneous sensing, processing, and memory, which well mimics human vision.

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite based materials have emerged over the past few decades as remarkable solution-processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier-diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.

Nanomembranes-Affiliated Water Remediation: Chronology, Properties, Classification, Challenges and Future Prospects

Water contamination has become a global crisis, affecting millions of people worldwide and causing diseases and illnesses, including cholera, typhoid, and hepatitis A. Conventional water remediation methods have several challenges, including their inability to remove emerging contaminants and their high cost and environmental impact. Nanomembranes offer a promising solution to these challenges. Nanomembranes are thin, selectively permeable membranes that can remove contaminants from water based on size, charge, and other properties. They offer several advantages over conventional methods, including their ability to remove evolving pollutants, low functioning price, and reduced ecological influence. However, there are numerous limitations linked with the applications of nanomembranes in water remediation, including fouling and scaling, cost-effectiveness, and potential environmental impact. Researchers are working to reduce the cost of nanomembranes through the development of more cost-effective manufacturing methods and the use of alternative materials such as graphene. Additionally, there are concerns about the release of nanomaterials into the environment during the manufacturing and disposal of the membranes, and further research is needed to understand their potential impact. Despite these challenges, nanomembranes offer a promising solution for the global water crisis and could have a significant impact on public health and the environment. The current article delivers an overview on the exploitation of various engineered nanoscale substances, encompassing the carbonaceous nanomaterials, metallic, metal oxide and metal-organic frameworks, polymeric nano-adsorbents and nanomembranes, for water remediation. The article emphasizes the mechanisms involved in adsorption and nanomembrane filtration. Additionally, the authors aim to deliver an all-inclusive review on the chronology, technical execution, challenges, restrictions, reusability, and future prospects of these nanomaterials.

Multifunctional Optoelectronic Synapses Based on Arrayed MoS2 Monolayers Emulating Human Association Memory

Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS₂ monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS₂ prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.

Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks

The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.

Engineering optical tools for remotely controlled brain stimulation and regeneration

Neurological disorders are one of the world's leading medical and societal challenges due to the lack of efficacy of the first line treatment. Although pharmacological and non-pharmacological interventions have been employed with the aim of regulating neuronal activity and survival, they have failed to avoid symptom relapse and disease progression in the vast majority of patients. In the last 5 years, advanced drug delivery systems delivering bioactive molecules and neuromodulation strategies have been developed to promote tissue regeneration and remodel neuronal circuitry. However, both approaches still have limited spatial and temporal precision over the desired target regions. While external stimuli such as electromagnetic fields and ultrasound have been employed in the clinic for non-invasive neuromodulation, they do not have the capability of offering single-cell spatial resolution as light stimulation. Herein, we review the latest progress in this area of study and discuss the prospects of using light-responsive nanomaterials to achieve on-demand delivery of drugs and neuromodulation, with the aim of achieving brain stimulation and regeneration.

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.

Optogenetics-Inspired Fluorescent Synaptic Devices with Nonvolatility

Given the synergy of optogenetics and bioimaging in neuroscience, it is possible for light to simultaneously modulate and visualize synaptic events of optoelectronic synaptic devices, which are building blocks of a neuromorphic computing system with optoelectronic integration. Here we demonstrate the realization of the simultaneous modulation and visualization of synaptic events by using optically stimulated synaptic devices based on the heterostructure of fluorescent silicon quantum dots (Si QDs) and monolayer molybdenum disulfide (MoS₂). The charge-transfer-enabled photogating effect of the Si QDs/MoS₂ heterostructure leads to the nonvolatility of the synaptic devices, which exhibit important synaptic functionalities and synchronous fluorescence upon optical stimulation. An array of the Si QDs/MoS₂ optoelectronic synaptic devices is well-employed to mimic robust neural population coding. Defective devices in this array may be pinpointed by the absence of their fluorescence. This work has an important implication for the development of synaptic devices facilitating the system-level diagnosis and device-level positioning of a neuromorphic computing system.

Bioinspired and Low-Power 2D Machine Vision with Adaptive Machine Learning and Forgetting

Natural intelligence has many dimensions, with some of its most important manifestations being tied to learning about the environment and making behavioral changes. In primates, vision plays a critical role in learning. The underlying biological neural networks contain specialized neurons and synapses which not only sense and process visual stimuli but also learn and adapt with remarkable energy efficiency. Forgetting also plays an active role in learning. Mimicking the adaptive neurobiological mechanisms for seeing, learning, and forgetting can, therefore, accelerate the development of artificial intelligence (AI) and bridge the massive energy gap that exists between AI and biological intelligence. Here, we demonstrate a bioinspired machine vision system based on a 2D phototransistor array fabricated from large-area monolayer molybdenum disulfide (MoS₂) and integrated with an analog, nonvolatile, and programmable memory gate-stack; this architecture not only enables dynamic learning and relearning from visual stimuli but also offers learning adaptability under noisy illumination conditions at miniscule energy expenditure. In short, our demonstrated "all-in-one" hardware vision platform combines "sensing", "computing", and "storage" to not only overcome the von Neumann bottleneck of conventional complementary metal-oxide-semiconductor (CMOS) technology but also to eliminate the need for peripheral circuits and sensors.

Sensitization of ZnO Photoconductivity in the Visible Range by Colloidal Cesium Lead Halide Nanocrystals

In this work, colloidal perovskite nanocrystals (PNCs) are used to sensitize the photoconductivity of nanocrystalline ZnO films in the visible range. Nanocrystalline ZnO with a crystallite size of 12-16 nm was synthesized by precipitation of a zinc basic carbonate from an aqueous solution, followed by annealing at 300 °C. Perovskite oleic acid- and oleylamine-capped CsPbBr₃, CsPb(Cl/Br)₃ and CsPb(Br/I)₃ PNCs with a size of 6-13 nm were synthesized by a hot injection method at 170 °C in 1-octadecene. Photoconductive nanocomposites were prepared by applying a hexane sol of PNCs to a thick (100 μm) polycrystalline conductive ZnO layer. The spectral dependence of the photoconductivity, the dependence of the photoconductivity on irradiation, and the relaxation of the photoconductivity of the obtained nanocomposites have been studied. Sensitization of ZnO by CsPbBr₃ and CsPb(Cl/Br)₃ PNCs leads to enhanced photoconductivity in the visible range, the maximum of which is observed at 460 and 500 nm, respectively; close to the absorption maximum of PNCs. Nanocomposites ZnO/CsPb(Br/I)₃ turned out to be practically not photosensitive when irradiated with light in the visible range. The data obtained are discussed in terms of the position of the energy levels of ZnO and PNCs and the probable PNCs photodegradation. The structure, morphology, composition, and optical properties of the synthesized nanocrystals have also been studied by XRD, TEM, and XPS. The results can be applied to the creation of artificial neuromorphic systems in the visible optical range.

A bioinspired flexible neuromuscular system based thermal-annealing-free perovskite with passivation

Brain-inspired electronics require artificial synapses that have ultra-low energy consumption, high operating speed, and stable flexibility. Here, we demonstrate a flexible artificial synapse that uses a rapidly crystallized perovskite layer at room temperature. The device achieves a series of synaptic functions, including logical operations, temporal and spatial rules, and associative learning. Passivation using phenethyl-ammonium iodide eliminated defects and charge traps to reduce the energy consumption to 13.5 aJ per synaptic event, which is the world record for two-terminal artificial synapses. At this ultralow energy consumption, the device achieves ultrafast response frequency of up to 4.17 MHz; which is orders of magnitude magnitudes higher than previous perovskite artificial synapses. A multi-stimulus accumulative artificial neuromuscular system was then fabricated using the perovskite synapse as a key processing unit to control electrochemical artificial muscles, and realized muscular-fatigue warning. This artificial synapse will have applications in future bio-inspired electronics and neurorobots.

Neuromorphic device based on silicon nanosheets

Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-established CMOS processing industry. Recently, artificially stacked layered 2D structures have gained tremendous attention via fine-tuning properties for electronic devices. This article presents neuromorphic devices based on silicon nanosheets that are chemically exfoliated and surface-modified, enabling self-assembly into hierarchical stacking structures. The device functionality can be switched between a unipolar memristor and a feasibly reset-able synaptic device. The memory function of the device is based on the charge storage in the partially oxidized SiNS stacks followed by the discharge activated by the electric field at the Au-Si Schottky interface, as verified in both experimental and theoretical means. This work further inspired elegant neuromorphic computation models for digit recognition and noise filtration. Ultimately, it brings silicon - the most established semiconductor - back to the forefront for next-generation computations.

A Fully Solution-Printed Photosynaptic Transistor Array with Ultralow Energy Consumption for Artificial-Vision Neural Networks

Photosynaptic organic field-effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new-generation visual prosthetics and artificial perception systems. Here, a fully solution-printed photosynaptic OFET (FSP-OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge-carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP-OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light-perception capabilities. Consequently, the FSP-OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07-34 fJ per spike in short-term plasticity and 0.41-19.87 fJ per spike in long-term plasticity, both approaching the energy efficiency of biological synapses (1-100 fJ). Moreover, an artificial optic-neural network made from an 8 × 8 FSP-OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP-OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.

Nanostructured perovskites for nonvolatile memory devices

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors

Synaptic devices emulating biological synapses are a key building component of artificial neural networks. Porphyrins and graphene, as two kinds of emerging electronic materials, have attracted extensive attention in the research of photoelectric devices due to their excellent structural and functional properties. Herein, we present a photonic synaptic transistor based on porphyrin-graphene covalent hybrids utilizing 5,10,15,20-tetrakis (4-aminophenyl)-21H,23H-porphine and monolayer graphene linked through the diazo addition reaction. The photonic synaptic device successfully simulates several essential biological functions, and the synaptic plasticity can be regulated by adjusting the parameters of light spikes and gate voltages of the device. Moreover, learning and memory behaviors under different wavelengths are studied to imitate the learning efficiency of humans in diverse emotional states. It is worth noting that all the synaptic functions can be realized at a low operating voltage of -10 mV, which is much lower than that required by most reported photonic synaptic devices. These results indicate that covalent coupling products of porphyrins with graphene have broad prospects in the construction of synaptic transistors and may arouse new research advances in neuromorphic devices with ultralow operating voltage and low energy consumption.

Nanomaterials and their applications on bio-inspired wearable electronics

Wearable electronics featuring conformal attachment, sensitive perception and intellectual signal processing have made significant progress in recent years. However, when compared with living organisms, artificial sensory devices showed undeniable bulky shape, poor adaptability, and large energy consumption. To make up for the deficiencies, biological examples provide inspirations of novel designs and practical applications. In the field of biomimetics, nanomaterials from nanoparticles to layered two-dimensional materials are actively involved due to their outstanding physicochemical properties and nanoscale configurability. This review focuses on nanomaterials related to wearable electronics through bioinspired approaches on three different levels, interfacial packaging, sensory structure, and signal processing, which comprehensively guided recent progress of wearable devices in leveraging both nanomaterial superiorities and biorealistic functionalities. In addition, opinions on potential development trend are proposed aiming at implementing bioinspired electronics in multifunctional portable sensors, health monitoring, and intelligent prosthetics.

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.

Low-power consumption light-stimulated synaptic transistors based on natural carotene and organic semiconductors

Developing synaptic devices with environment-friendly materials is a promising research direction. Here, light-stimulated synaptic transistors based on natural carotene and organic semiconductors were developed. Several important functions similar to biological synapses were realized and an ultra-low power consumption of 3.4 × 10^-18 J was achieved.

Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems

For the realization of retina-inspired neuromorphic visual systems which simulate basic functions of human visual systems, optoelectronic synapses capable of combining perceiving, processing, and memorizing in a single device have attracted immense interests. Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)₃) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. The organic heterojunction serves as a basis for distinctive synaptic characteristics under different wavelengths of light. Furthermore, synaptic transistor arrays are fabricated to demonstrate their optical perception efficiency and color recognition capability under multiple illuminating conditions. The wavelength-tunability of synaptic behaviors further enables the mimicry of mood-modulated visual learning and memorizing processes of humans. More significantly, the computational dynamics of neurons of synaptic outputs including associated learning and optical logic functions can be successfully demonstrated on the presented devices. This work may locate the stage for future studies on optoelectronic synaptic devices toward the implementation of artificial visual systems.

Memristive Artificial Synapses for Neuromorphic Computing

Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.

Environment-Adaptable Photonic-Electronic-Coupled Neuromorphic Angular Visual System

Environment-adaptable photonic-electronic-coupled devices can help overcome major challenges related to the extraction of highly specific angular information, such as human visual perception. However, a true implementation of such a device has rarely been investigated thus far. Herein, we provide an approach and demonstrate a proof-of-concept solid-state semiconductor-based highly transparent, optical-electrical-coupled, self-adaptive angular visual perception system that can fulfill the versatile criteria of the human vision system. Specifically, all of the primitive functions of visual perception, such as broad angular sensing, processing, and manifold memory storage, are demonstrated and comodulated using optical and electric pulses. This development represents an essential step forward in the fabrication of an environment-adaptable artificial angular perception framework with deep implications in the fields of optoelectronics, artificial eyes, and memory storage applications.

Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning

Silicon- (Si-) based optoelectronic synaptic devices mimicking biological synaptic functionalities may be critical to the development of large-scale integrated optoelectronic artificial neural networks. As a type of important Si materials, Si nanocrystals (NCs) have been successfully employed to fabricate optoelectronic synaptic devices. In this work, organometal halide perovskite with excellent optical asborption is employed to improve the performance of optically stimulated Si-NC-based optoelectronic synaptic devices. The improvement is evidenced by the increased optical sensitivity and decreased electrical energy consumption of the devices. It is found that the current simulation of biological synaptic plasticity is essentially enabled by photogating, which is based on the heterojuction between Si NCs and organometal halide perovskite. By using the synaptic plasticity, we have simulated the well-known biased and correlated random-walk (BCRW) learning.

Perovskite/Organic Semiconductor-Based Photonic Synaptic Transistor for Artificial Visual System

Artificial visual system with information sensing, processing, and memory function is promoting the development of artificial intelligence techniques. Photonic synapse as an essential component can enhance the visual information processing efficiency owing to the high propagation speed, low latency, and large bandwidth. Herein, photonic synaptic transistors based on organic semiconductor poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT) and perovskite CsPbBr₃ quantum dots are fabricated by a simple solution process. The device can simulate fundamental synaptic behaviors, including excitatory postsynaptic current, pair-pulse facilitation, the transition of short-term memory to long-term memory, and "learning experience" behavior. Combining the advantages of the high photosensitivity of perovskites and relatively high conductivity of DPPDTT, the device can exhibit excellent synaptic performances at a low voltage of -0.2 V. Even under an ultralow operation voltage of -0.0005 V, the device can still show obvious synaptic responses. Tunable synaptic integration behaviors including "AND" and "OR" light logic functions can be realized. An artificial visual system is successfully emulated by illuminating the synaptic arrays employing light of different densities. Therefore, low-voltage synaptic devices based on organic semiconductor and CsPbBr₃ quantum dots with a simple fabrication technique present high potential to mimic human visual memory.