1
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Shen L, Xiao D, Cao T. Proximity-Induced Exchange Interaction: A New Pathway for Quantum Sensing Using Spin Centers in Hexagonal Boron Nitride. J Phys Chem Lett 2024; 15:4359-4366. [PMID: 38619851 DOI: 10.1021/acs.jpclett.4c00722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have attracted a great deal of interest because of its potential in various quantum applications. Due to hBN's two-dimensional nature, the spin center in hBN can be engineered in the proximity of the target material, providing advantages over its three-dimensional counterparts, such as the nitrogen-vacancy center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between the spin center in hBN and the underlying magnetic substrate induced by the magnetic proximity effect. By first-principles calculation, we demonstrate that the induced exchange interaction dominates over the dipole-dipole interaction by orders of magnitude when in the proximity. The interaction remains antiferromagnetic across all stacking configurations between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.
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Affiliation(s)
- Lingnan Shen
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, Washington 98195-1560, United States
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
- Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Ting Cao
- Department of Materials Science & Engineering, University of Washington, Seattle, Washington 98195-2120, United States
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2
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Luo J, Geng Y, Rana F, Fuchs GD. Room temperature optically detected magnetic resonance of single spins in GaN. NATURE MATERIALS 2024; 23:512-518. [PMID: 38347119 DOI: 10.1038/s41563-024-01803-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 01/09/2024] [Indexed: 03/14/2024]
Abstract
High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect's ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.
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Affiliation(s)
- Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY, USA
| | - Yifei Geng
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Farhan Rana
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
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3
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Chen CA, Chen PH, Zheng YX, Chen CH, Hsu MK, Hsu KC, Lai YY, Chuu CS, Deng H, Lee YH. Tunable Single-Photon Emission with Wafer-Scale Plasmonic Array. NANO LETTERS 2024; 24:3395-3403. [PMID: 38359157 PMCID: PMC10958497 DOI: 10.1021/acs.nanolett.3c05155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/08/2024] [Accepted: 02/09/2024] [Indexed: 02/17/2024]
Abstract
Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array. The transient voltage electrophoretic deposition (EPD) reaction is developed to effectively enhance the filling of single-crystal nanometals in the designed patterns without aggregation, which ensures the fabricated array for tunable performances of these single-photon emitters. An enhancement of ∼500% of the SPE intensity of the h-BN emitter array is observed with a radiative quantum efficiency of up to 20% and a saturated count rate of more than 4.5 × 106 counts/s. These results suggest the integrated h-BN-plasmonic array as a promising platform for scalable and controllable SPE photonics at room temperature.
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Affiliation(s)
- Chun-An Chen
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Han Chen
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Xiang Zheng
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chiao-Han Chen
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mong-Kai Hsu
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Chieh Hsu
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ying-Yu Lai
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
- Department
of Physics, University of Michigan, Ann Arbor, Michigan 48109-2122, United
States
| | - Chih-Sung Chuu
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hui Deng
- Department
of Physics, University of Michigan, Ann Arbor, Michigan 48109-2122, United
States
| | - Yi-Hsien Lee
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
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4
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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5
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Murzakhanov FF, Sadovnikova MA, Gracheva IN, Mamin GV, Baibekov EI, Mokhov EN. Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation. NANOTECHNOLOGY 2024; 35:155001. [PMID: 38154127 DOI: 10.1088/1361-6528/ad1940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping withλext= 532 nm laser using high-frequency (νmw= 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to beP≈ 38.4%. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40μs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constantCq= 180 kHz related to nuclear quadrupole moment of14N. These results have fundamental importance for understanding the spin properties of boron vacancy.
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Affiliation(s)
- Fadis F Murzakhanov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | | | - Irina N Gracheva
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Georgy V Mamin
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Eduard I Baibekov
- Institute of Physics, Kazan Federal University, Kremlyovskaya 18, Kazan 420008, Russia
| | - Evgeniy N Mokhov
- Ioffe Institute, Polytekhnicheskaya, 26, St Petersburg 194021, Russia
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6
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Zeng XD, Yang YZ, Guo NJ, Li ZP, Wang ZA, Xie LK, Yu S, Meng Y, Li Q, Xu JS, Liu W, Wang YT, Tang JS, Li CF, Guo GC. Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays. NANOSCALE 2023; 15:15000-15007. [PMID: 37665054 DOI: 10.1039/d3nr03486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
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Affiliation(s)
- Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qiang Li
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
- State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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7
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Zhao Y, Chakraborty P, Passian A, Thundat T. Ultrasensitive Photothermal Spectroscopy: Harnessing the Seebeck Effect for Attogram-Level Detection. NANO LETTERS 2023; 23:7883-7889. [PMID: 37579260 DOI: 10.1021/acs.nanolett.3c01710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Molecular-level spectroscopy is crucial for sensing and imaging applications, yet detecting and quantifying minuscule quantities of chemicals remain a challenge, especially when they surface adsorb in low numbers. Here, we introduce a photothermal spectroscopic technique that enables the high selectivity sensing of adsorbates with an attogram detection limit. Our approach utilizes the Seebeck effect in a microfabricated nanoscale thermocouple junction, incorporated into the apex of a microcantilever. We observe minimal thermal mass exhibited by the sensor, which maintains exceptional thermal insulation. The temperature variation driving the thermoelectric junction arises from the nonradiative decay of molecular adsorbates' vibrational states on the tip. We demonstrate the detection of photothermal spectra of physisorbed trinitrotoluene (TNT) and dimethyl methylphosphonate (DMMP) molecules, as well as representative polymers, with an estimated mass of 10-18 g.
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Affiliation(s)
- Yaoli Zhao
- Chemical and Biological Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Patatri Chakraborty
- Chemical and Biological Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - Ali Passian
- Quantum Computing and Sensing Group, Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Thomas Thundat
- Chemical and Biological Engineering, University at Buffalo, Buffalo, New York 14260, United States
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8
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Rizzato R, Schalk M, Mohr S, Hermann JC, Leibold JP, Bruckmaier F, Salvitti G, Qian C, Ji P, Astakhov GV, Kentsch U, Helm M, Stier AV, Finley JJ, Bucher DB. Extending the coherence of spin defects in hBN enables advanced qubit control and quantum sensing. Nat Commun 2023; 14:5089. [PMID: 37607945 PMCID: PMC10444786 DOI: 10.1038/s41467-023-40473-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/26/2023] [Indexed: 08/24/2023] Open
Abstract
Negatively-charged boron vacancy centers ([Formula: see text]) in hexagonal Boron Nitride (hBN) are attracting increasing interest since they represent optically-addressable qubits in a van der Waals material. In particular, these spin defects have shown promise as sensors for temperature, pressure, and static magnetic fields. However, their short spin coherence time limits their scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by two orders of magnitude, approaching the fundamental T1 relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect radiofrequency signals with sub-Hz resolution. The corresponding sensitivity is benchmarked against that of state-of-the-art NV-diamond quantum sensors. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures.
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Affiliation(s)
- Roberto Rizzato
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- University of Bari, Department of Physics "M. Merlin", Via Amendola 173, Bari, 70125, Italy.
| | - Martin Schalk
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Stephan Mohr
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Jens C Hermann
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Joachim P Leibold
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, James-Franck-Str. 1, Garching bei München, 85748, Germany
| | - Fleming Bruckmaier
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
| | - Giovanna Salvitti
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany
- University of Bologna, Department of Chemistry "G. Ciamician", Via Selmi, 2, Bologna, 40126, Italy
| | - Chenjiang Qian
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Peirui Ji
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
| | - Georgy V Astakhov
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Ulrich Kentsch
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
| | - Manfred Helm
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, Dresden, 01328, Germany
- TU Dresden, 01062, Dresden, Germany
| | - Andreas V Stier
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Jonathan J Finley
- Walter Schottky Institute, TUM School of Natural Sciences, Am Coulombwall 4, Garching bei München, 85748, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany
| | - Dominik B Bucher
- Technical University of Munich, TUM School of Natural Sciences, Department of Chemistry, Lichtenbergstraße 4, Garching bei München, 85748, Germany.
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, München, D-80799, Germany.
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9
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Sánchez Arribas I, Taniguchi T, Watanabe K, Weig EM. Radiation Pressure Backaction on a Hexagonal Boron Nitride Nanomechanical Resonator. NANO LETTERS 2023; 23:6301-6307. [PMID: 37460106 PMCID: PMC10375595 DOI: 10.1021/acs.nanolett.3c00544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, with several of them being sensitive to strain. Establishing optomechanical control of hBN will enable hybrid quantum devices that combine the spin degree of freedom with the cavity optomechanical toolbox. In this Letter, we report the first observation of radiation pressure backaction at telecom wavelengths with a hBN drum-head mechanical resonator. The thermomechanical motion of the resonator is coupled to the optical mode of a high finesse fiber-based Fabry-Pérot microcavity in a membrane-in-the-middle configuration. We are able to resolve the optical spring effect and optomechanical damping with a single photon coupling strength of g0/2π = 1200 Hz. Our results pave the way for tailoring the mechanical properties of hBN resonators with light.
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Affiliation(s)
- Irene Sánchez Arribas
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Eva M Weig
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany
- TUM Center for Quantum Engineering (ZQE), 85748 Garching, Germany
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10
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Robertson IO, Scholten SC, Singh P, Healey AJ, Meneses F, Reineck P, Abe H, Ohshima T, Kianinia M, Aharonovich I, Tetienne JP. Detection of Paramagnetic Spins with an Ultrathin van der Waals Quantum Sensor. ACS NANO 2023. [PMID: 37406158 DOI: 10.1021/acsnano.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material that can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (VB-) defects in a powder of ultrathin hBN nanoflakes (<10 atomic monolayers thick on average) and measure the longitudinal spin relaxation time (T1) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd3+ ions and observe a clear T1 quenching under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements, including T1 relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications and make steps toward the realization of a truly 2D, ultrasensitive quantum sensor.
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Affiliation(s)
- Islay O Robertson
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Priya Singh
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Alexander J Healey
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Fernando Meneses
- School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia
| | - Philipp Reineck
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
- ARC Centre of Excellence for Nanoscale BioPhotonics, RMIT University, Melbourne, Victoria 3001, Australia
| | - Hiroshi Abe
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Takeshi Ohshima
- National Institutes for Quantum Science and Technology (QST), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
- Department of Materials Science, Tohoku University, Sendai, 980-8579, Japan
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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11
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Zhou F, Jiang Z, Liang H, Ru S, Bettiol AA, Gao W. DC Magnetic Field Sensitivity Optimization of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37364230 DOI: 10.1021/acs.nanolett.3c01881] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Spin defects existing in van der Waals materials attract wide attention thanks to their natural advantages for in situ quantum sensing, especially the negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (h-BN). Here we systematically investigate the laser and microwave power broadening in continuous-wave optically detected magnetic resonance (ODMR) of the VB- ensemble in h-BN, by revealing the behaviors of ODMR contrast and line width as a function of the laser and microwave powers. The experimental results are well explained by employing a two-level simplified model of ODMR dynamics. Furthermore, with optimized power, the DC magnetic field sensitivity of VB- ensemble is significantly improved up to 2.87 ± ± 0.07 μT/Hz. Our results provide important suggestions for further applications of VB- centers in quantum information processing and ODMR-based quantum sensing.
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Affiliation(s)
- Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zhengzhi Jiang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Haidong Liang
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Andrew A Bettiol
- Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
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12
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Gale A, Scognamiglio D, Zhigulin I, Whitefield B, Kianinia M, Aharonovich I, Toth M. Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2023. [PMID: 37363816 DOI: 10.1021/acs.nanolett.3c01678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2023]
Abstract
Negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate the charge state switching of VB defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states (VB- ⇌ VB0 + e-), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the VB charge state, and to stabilize the -1 state which is a prerequisite for spin manipulation and optical readout of the defect.
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Affiliation(s)
- Angus Gale
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Dominic Scognamiglio
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Ivan Zhigulin
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Benjamin Whitefield
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW 2007, Australia
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13
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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14
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Gong R, He G, Gao X, Ju P, Liu Z, Ye B, Henriksen EA, Li T, Zu C. Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride. Nat Commun 2023; 14:3299. [PMID: 37280252 DOI: 10.1038/s41467-023-39115-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 05/26/2023] [Indexed: 06/08/2023] Open
Abstract
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ([Formula: see text]) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the [Formula: see text] ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of [Formula: see text]. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of [Formula: see text] to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of [Formula: see text], which are important for future use of defects in hBN as quantum sensors and simulators.
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Affiliation(s)
- Ruotian Gong
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Guanghui He
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
| | - Zhongyuan Liu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
| | - Bingtian Ye
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Erik A Henriksen
- Department of Physics, Washington University, St. Louis, MO, 63130, USA
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Chong Zu
- Department of Physics, Washington University, St. Louis, MO, 63130, USA.
- Institute of Materials Science and Engineering, Washington University, St. Louis, MO, 63130, USA.
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15
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Guo NJ, Li S, Liu W, Yang YZ, Zeng XD, Yu S, Meng Y, Li ZP, Wang ZA, Xie LK, Ge RC, Wang JF, Li Q, Xu JS, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature. Nat Commun 2023; 14:2893. [PMID: 37210408 DOI: 10.1038/s41467-023-38672-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 05/10/2023] [Indexed: 05/22/2023] Open
Abstract
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.
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Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Song Li
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Rong-Chun Ge
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Adam Gali
- Wigner Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary.
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Muegyetem rakpart 3, H-1111Budapest, Hungary.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China.
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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16
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Zhou JY, Li Q, Hao ZH, Lin WX, He ZX, Liang RJ, Guo L, Li H, You L, Tang JS, Xu JS, Li CF, Guo GC. Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes. NANO LETTERS 2023; 23:4334-4343. [PMID: 37155148 DOI: 10.1021/acs.nanolett.3c00568] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.
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Affiliation(s)
- Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Rui-Jian Liang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Liping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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17
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Karanikolas V, Iwasaki T, Henzie J, Ikeda N, Yamauchi Y, Wakayama Y, Kuroda T, Watanabe K, Taniguchi T. Plasmon-Triggered Ultrafast Operation of Color Centers in Hexagonal Boron Nitride Layers. ACS OMEGA 2023; 8:14641-14647. [PMID: 37125116 PMCID: PMC10134455 DOI: 10.1021/acsomega.3c00512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 03/15/2023] [Indexed: 05/03/2023]
Abstract
High-quality emission centers in two-dimensional materials are promising components for future photonic and optoelectronic applications. Carbon-enriched hexagonal boron nitride (hBN:C) layers host atom-like color-center (CC) defects with strong and robust photoemission up to room temperature. Placing the hBN:C layers on top of Ag triangle nanoparticles (NPs) accelerates the decay of the CC defects down to 46 ps from their reference bulk value of 350 ps. The ultrafast decay is achieved due to the efficient excitation of the plasmon modes of the Ag NPs by the near field of the CCs. Simulations of the CC/Ag NP interaction show that higher Purcell values are expected, although the measured decay of the CCs is limited by the instrument response. The influence of the NP thickness on the Purcell factor of the CCs is analyzed. The ultrafast operation of the CCs in hBN:C layers paves the way for their use in demanding applications, such as single-photon emitters and quantum devices.
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Affiliation(s)
- Vasilios Karanikolas
- International
Center for Young Scientists (ICYS), National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takuya Iwasaki
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Joel Henzie
- JST-ERATO
Yamauchi Materials Space-Tectonics Project and International Center
for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Naoki Ikeda
- Research
Network and Facility Services Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Yusuke Yamauchi
- Australian
Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland, Brisbane, Queensland 4072, Australia
- JST-ERATO
Yamauchi Materials Space-Tectonics Project and International Center
for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yutaka Wakayama
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Kuroda
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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18
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Coherence protection of spin qubits in hexagonal boron nitride. Nat Commun 2023; 14:461. [PMID: 36709208 PMCID: PMC9884286 DOI: 10.1038/s41467-023-36196-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 01/17/2023] [Indexed: 01/29/2023] Open
Abstract
Spin defects in foils of hexagonal boron nitride are an attractive platform for magnetic field imaging, since the probe can be placed in close proximity to the target. However, as a III-V material the electron spin coherence is limited by the nuclear spin environment, with spin echo coherence times of ∽100 ns at room temperature accessible magnetic fields. We use a strong continuous microwave drive with a modulation in order to stabilize a Rabi oscillation, extending the coherence time up to ∽ 4μs, which is close to the 10 μs electron spin lifetime in our sample. We then define a protected qubit basis, and show full control of the protected qubit. The coherence times of a superposition of the protected qubit can be as high as 0.8 μs. This work establishes that boron vacancies in hexagonal boron nitride can have electron spin coherence times that are competitive with typical nitrogen vacancy centres in small nanodiamonds under ambient conditions.
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19
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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20
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Aharonovich I, Tetienne JP, Toth M. Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:9227-9235. [PMID: 36413674 DOI: 10.1021/acs.nanolett.2c03743] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a fascinating platform to explore quantum emitters and their applications. Beyond being a wide-bandgap material, it is also a van der Waals crystal, enabling direct exfoliation of atomically thin layers─a combination which offers unique advantages over bulk, 3D crystals. In this Mini Review we discuss the unique properties of hBN quantum emitters and highlight progress toward their future implementation in practical devices. We focus on engineering and integration of the emitters with scalable photonic resonators. We also highlight recently discovered spin defects in hBN and discuss their potential utility for quantum sensing. All in all, hBN has become a front runner in explorations of solid-state quantum science with promising future prospects.
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Affiliation(s)
- Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | | | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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21
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Excitation-dependent ratiometric fluorescence response to mercury ion based on single hexagonal boron nitride quantum dots. Anal Chim Acta 2022; 1236:340585. [DOI: 10.1016/j.aca.2022.340585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Revised: 10/23/2022] [Accepted: 11/01/2022] [Indexed: 11/06/2022]
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22
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Nonahal M, Li C, Tjiptoharsono F, Ding L, Stewart C, Scott J, Toth M, Ha ST, Kianinia M, Aharonovich I. Coupling spin defects in hexagonal boron nitride to titanium dioxide ring resonators. NANOSCALE 2022; 14:14950-14955. [PMID: 36069362 DOI: 10.1039/d2nr02522a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies (VB-) in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled VB- showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.
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Affiliation(s)
- Milad Nonahal
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Febiana Tjiptoharsono
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Lu Ding
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Connor Stewart
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Son Tung Ha
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Kinesis, 138635 Singapore
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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23
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Liu W, Ivády V, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Guo NJ, Yan FF, Li Q, Wang JF, Xu JS, Liu X, Zhou ZQ, Dong Y, Chen XD, Sun FW, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride. Nat Commun 2022; 13:5713. [PMID: 36175507 PMCID: PMC9522675 DOI: 10.1038/s41467-022-33399-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.
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Affiliation(s)
- Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Viktor Ivády
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Street 38, D-01187 Dresden, Germany
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Adam Gali
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
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24
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Curie D, Krogel JT, Cavar L, Solanki A, Upadhyaya P, Li T, Pai YY, Chilcote M, Iyer V, Puretzky A, Ivanov I, Du MH, Reboredo F, Lawrie B. Correlative Nanoscale Imaging of Strained hBN Spin Defects. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41361-41368. [PMID: 36048915 DOI: 10.1021/acsami.2c11886] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Spin defects like the negatively charged boron vacancy color center (VB-) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB- color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB- luminescence is observed at creases, consistent with density functional theory calculations showing VB- migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.
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Affiliation(s)
- David Curie
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Jaron T Krogel
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Lukas Cavar
- Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
| | - Abhishek Solanki
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Tongcang Li
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yun-Yi Pai
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Michael Chilcote
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
| | - Vasudevan Iyer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ilia Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Mao-Hua Du
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Fernando Reboredo
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Benjamin Lawrie
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Quantum Science Center, Oak Ridge, Tennessee 37831, United States
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25
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Huang M, Zhou J, Chen D, Lu H, McLaughlin NJ, Li S, Alghamdi M, Djugba D, Shi J, Wang H, Du CR. Wide field imaging of van der Waals ferromagnet Fe3GeTe2 by spin defects in hexagonal boron nitride. Nat Commun 2022; 13:5369. [PMID: 36100604 PMCID: PMC9470674 DOI: 10.1038/s41467-022-33016-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 08/26/2022] [Indexed: 11/26/2022] Open
Abstract
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems. Hexagonal boron nitride (h-BN) has been used extensively to encapsulate other van der Waals materials, protecting them from environmental degradation, and allowing integration into more complex heterostructures. Here, the authors make use of boron vacancy spin defects in h-BN using them to image the magnetic properties of a Fe3GeTe2 flake.
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26
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Gao X, Vaidya S, Li K, Ju P, Jiang B, Xu Z, Allcca AEL, Shen K, Taniguchi T, Watanabe K, Bhave SA, Chen YP, Ping Y, Li T. Nuclear spin polarization and control in hexagonal boron nitride. NATURE MATERIALS 2022; 21:1024-1028. [PMID: 35970964 DOI: 10.1038/s41563-022-01329-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Electron spins in van der Waals materials are playing a crucial role in recent advances in condensed-matter physics and spintronics. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively charged boron vacancy ([Formula: see text]) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. We observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of [Formula: see text] defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. Further, we detect strong electron-mediated nuclear-nuclear spin coupling that is five orders of magnitude larger than the direct nuclear-spin dipolar coupling, enabling multi-qubit operations. Our work opens new avenues for the manipulation of nuclear spins in van der Waals materials for quantum information science and technology.
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Affiliation(s)
- Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Sumukh Vaidya
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Kejun Li
- Department of Physics, University of California, Santa Cruz, CA, USA
| | - Peng Ju
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Boyang Jiang
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
| | - Zhujing Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | | | - Kunhong Shen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Sunil A Bhave
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai, Japan
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California, Santa Cruz, CA, USA
| | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, USA.
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA.
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27
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Lyu X, Tan Q, Wu L, Zhang C, Zhang Z, Mu Z, Zúñiga-Pérez J, Cai H, Gao W. Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:6553-6559. [PMID: 35960708 DOI: 10.1021/acs.nanolett.2c01722] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride is not only a promising functional material for the development of two-dimensional optoelectronic devices but also a good candidate for quantum sensing thanks to the presence of quantum emitters in the form of atom-like defects. Their exploitation in quantum technologies necessitates understanding their coherence properties as well as their sensitivity to external stimuli. In this work, we probe the strain configuration of boron vacancy centers (VB-) created by ion implantation in h-BN flakes thanks to wide-field spatially resolved optically detected magnetic resonance and submicro Raman spectroscopy. Our experiments demonstrate the ability of VB- for quantum sensing of strain and, given the omnipresence of h-BN in 2D-based devices, open the door for in situ imaging of strain under working conditions.
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Affiliation(s)
- Xiaodan Lyu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Lishu Wu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Jesús Zúñiga-Pérez
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, 637371, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543, Singapore
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28
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Klaiss R, Ziegler J, Miller D, Zappitelli K, Watanabe K, Taniguchi T, Alemán B. Uncovering the morphological effects of high-energy Ga + focused ion beam milling on hBN single-photon emitter fabrication. J Chem Phys 2022; 157:074703. [DOI: 10.1063/5.0097581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
Many techniques to fabricate complex nanostructures and quantum emitting defects in low dimensional materials for quantum information technologies rely on the patterning capabilities of focused ion beam (FIB) systems. In particular, the ability to pattern arrays of bright and stable room temperature single-photon emitters (SPEs) in 2D wide-bandgap insulator hexagonal boron nitride (hBN) via high-energy heavy-ion FIB allows for direct placement of SPEs without structured substrates or polymer-reliant lithography steps. However, the process parameters needed to create hBN SPEs with this technique are dependent on the growth method of the material chosen. Moreover, morphological damage induced by high-energy heavy-ion exposure may further influence the successful creation of SPEs. In this work, we perform atomic force microscopy to characterize the surface morphology of hBN regions patterned by Ga+ FIB to create SPEs at a range of ion doses and find that material swelling, and not milling as expected, is most strongly and positively correlated with the onset of non-zero SPE yields. Furthermore, we simulate vacancy concentration profiles at each of the tested doses and propose a qualitative model to elucidate how Ga+ FIB patterning creates isolated SPEs that is consistent with observed optical and morphological characteristics and is dependent on the consideration of void nucleation and growth from vacancy clusters. Our results provide novel insight into the formation of hBN SPEs created by high-energy heavy-ion milling that can be leveraged for monolithic hBN photonic devices and could be applied to a wide range of low-dimensional solid-state SPE hosts.
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Affiliation(s)
- Rachael Klaiss
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Joshua Ziegler
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - David Miller
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kara Zappitelli
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Benjamín Alemán
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
- Phil and Penny Knight Campus for Accelerating Scientific Impact, University of Oregon, Eugene, Oregon 97403, USA
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29
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Haykal A, Tanos R, Minotto N, Durand A, Fabre F, Li J, Edgar JH, Ivády V, Gali A, Michel T, Dréau A, Gil B, Cassabois G, Jacques V. Decoherence of V[Formula: see text] spin defects in monoisotopic hexagonal boron nitride. Nat Commun 2022; 13:4347. [PMID: 35896526 PMCID: PMC9329290 DOI: 10.1038/s41467-022-31743-0] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Accepted: 06/21/2022] [Indexed: 11/20/2022] Open
Abstract
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first confirm that it corresponds to the negatively charged boron-vacancy center ([Formula: see text]). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of [Formula: see text] spin defects, which are valuable for the future development of hBN-based quantum sensing foils.
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Affiliation(s)
- A. Haykal
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - R. Tanos
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - N. Minotto
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - A. Durand
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - F. Fabre
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - J. Li
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS USA
| | - J. H. Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS USA
| | - V. Ivády
- Max Planck Institute for the Physics of Complex Systems, Dresden, Germany
- Department of Physics, Linköping University, Linköping, Sweden
| | - A. Gali
- Wigner Research Centre for Physics, Budapest, Hungary
- Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary
| | - T. Michel
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - A. Dréau
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - B. Gil
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - G. Cassabois
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
| | - V. Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, Montpellier, France
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30
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Mathur N, Mukherjee A, Gao X, Luo J, McCullian BA, Li T, Vamivakas AN, Fuchs GD. Excited-state spin-resonance spectroscopy of V[Formula: see text] defect centers in hexagonal boron nitride. Nat Commun 2022; 13:3233. [PMID: 35680866 PMCID: PMC9184587 DOI: 10.1038/s41467-022-30772-z] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Accepted: 05/14/2022] [Indexed: 11/17/2022] Open
Abstract
The recently discovered spin-active boron vacancy (V[Formula: see text]) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system from D3h to C2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing.
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Affiliation(s)
- Nikhil Mathur
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
| | | | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY USA
| | | | - Tongcang Li
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN USA
| | - A. Nick Vamivakas
- The Institute of Optics, University of Rochester, Rochester, NY USA
- Materials Science, University of Rochester, Rochester, NY USA
- Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
- Center for Coherence and Quantum Optics, University of Rochester, Rochester, NY USA
| | - Gregory D. Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY USA
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31
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Yu P, Sun H, Wang M, Zhang T, Ye X, Zhou J, Liu H, Wang CJ, Shi F, Wang Y, Du J. Excited-State Spectroscopy of Spin Defects in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:3545-3549. [PMID: 35439014 DOI: 10.1021/acs.nanolett.1c04841] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A negatively charged boron vacancy (VB-) color center in hexagonal boron nitride has recently been proposed as a promising quantum sensor due to its excellent properties. However, the spin level structure of the VB- color center is still unclear, especially for the excited state. Here we measured and confirmed the excited-state spin transitions of VB- using an optically detected magnetic resonance (ODMR) technique. The zero-field splitting of the excited state is 2.06 GHz, the transverse splitting is 93.1 MHz, and the g factor is 2.04. Moreover, negative peaks in fluorescence intensity and ODMR contrast at the level anticrossing point were observed, and they further confirmed that the spin transitions we measured came from the excited state. Our work deepens the understanding of the excited-state structure of VB- and promotes VB--based quantum sensing applications.
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Affiliation(s)
- Pei Yu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Haoyu Sun
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Mengqi Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Tao Zhang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Xiangyu Ye
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Jingwei Zhou
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Hangyu Liu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Cheng-Jie Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Fazhan Shi
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Ya Wang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Jiangfeng Du
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China
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32
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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33
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Yang T, Mendelson N, Li C, Gottscholl A, Scott J, Kianinia M, Dyakonov V, Toth M, Aharonovich I. Spin defects in hexagonal boron nitride for strain sensing on nanopillar arrays. NANOSCALE 2022; 14:5239-5244. [PMID: 35315850 DOI: 10.1039/d1nr07919k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) has attracted much attention as a platform for studies of light-matter interactions at the nanoscale, especially in quantum nanophotonics. Recent efforts have focused on spin defects, specifically negatively charged boron vacancy (VB-) centers. Here, we demonstrate a scalable method to enhance the VB- emission using an array of SiO2 nanopillars. We achieve a 4-fold increase in photoluminescence (PL) intensity, and a corresponding 4-fold enhancement in optically detected magnetic resonance (ODMR) contrast. Furthermore, the VB- ensembles provide useful information about the strain fields associated with the strained hBN at the nanopillar sites. Our results provide an accessible way to increase the emission intensity as well as the ODMR contrast of the VB- defects, while simultaneously form a basis for miniaturized quantum sensors in layered heterostructures.
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Affiliation(s)
- Tieshan Yang
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - John Scott
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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34
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Tan Q, Lai JM, Liu XL, Guo D, Xue Y, Dou X, Sun BQ, Deng HX, Tan PH, Aharonovich I, Gao W, Zhang J. Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:1331-1337. [PMID: 35073101 DOI: 10.1021/acs.nanolett.1c04647] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
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Affiliation(s)
- Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Guo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiuming Dou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bao-Quan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science University of Technology Sydney, New South Wales 2007, Australia
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
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35
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Stability of the Discrete Time-Crystalline Order in Spin-Optomechanical and Open Cavity QED Systems. PHOTONICS 2022. [DOI: 10.3390/photonics9020061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Discrete time crystals (DTC) have been demonstrated experimentally in several different quantum systems in the past few years. Spin couplings and cavity losses have been shown to play crucial roles for realizing DTC order in open many-body systems out of equilibrium. Recently, it has been proposed that eternal and transient DTC can be present with an open Floquet setup in the thermodynamic limit and in the deep quantum regime with few qubits, respectively. In this work, we consider the effects of spin damping and spin dephasing on the DTC order in spin-optomechanical and open cavity systems in which the spins can be all-to-all coupled. In the thermodynamic limit, it is shown that the existence of dephasing can destroy the coherence of the system and finally lead the system to its trivial steady state. Without dephasing, eternal DTC is displayed in the weak damping regime, which may be destroyed by increasing the all-to-all spin coupling or the spin damping. By contrast, the all-to-all coupling is constructive to the DTC in the moderate damping regime. We also focus on a model which can be experimentally realized by a suspended hexagonal boron nitride (hBN) membrane with a few spin color centers under microwave drive and Floquet magnetic field. Signatures of transient DTC behavior are demonstrated in both weak and moderate dissipation regimes without spin dephasing. Relevant experimental parameters are also discussed for realizing transient DTC order in such an hBN optomechanical system.
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Baber S, Malein RNE, Khatri P, Keatley PS, Guo S, Withers F, Ramsay AJ, Luxmoore IJ. Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride Using Time-Resolved Optically Detected Magnetic Resonance. NANO LETTERS 2022; 22:461-467. [PMID: 34958574 DOI: 10.1021/acs.nanolett.1c04366] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with intersystem crossing rates of 1.02 ns-1 and 2.03 ns-1 for the mS = 0 and mS = ±1 states, respectively. Time gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of |DES| = 2.09 GHz is measured. The magnetic field dependence of the photoluminescence exhibits dips corresponding to the ground (GSLAC) and excited-state (ESLAC) anticrossings and additional anticrossings due to coupling with nearby spin-1/2 parasitic impurities. Comparison to a model suggests that the anticrossings are mediated by the interaction with nuclear spins and allows an estimate of the ratio of the singlet to triplet spin-dependent relaxation rates of κ0/κ1 = 0.34.
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Affiliation(s)
- Simon Baber
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | | | - Prince Khatri
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Paul Steven Keatley
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Shi Guo
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Freddie Withers
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Andrew J Ramsay
- Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge CB3 0HE, United Kingdom
| | - Isaac J Luxmoore
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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Mendelson N, Ritika R, Kianinia M, Scott J, Kim S, Fröch JE, Gazzana C, Westerhausen M, Xiao L, Mohajerani SS, Strauf S, Toth M, Aharonovich I, Xu ZQ. Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106046. [PMID: 34601757 DOI: 10.1002/adma.202106046] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB - ) centers, are emerging candidates for quantum sensing. However, the VB - defects suffer from low quantum efficiency and, as a result, exhibit weak photoluminescence. In this work, a scalable approach is demonstrated to dramatically enhance the VB - emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, two orders of magnitude are extracted in photoluminescence enhancement associated with a corresponding twofold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and in realization of nanophotonic devices with spin defects in hexagonal boron nitride.
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Affiliation(s)
- Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Ritika Ritika
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - John Scott
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria, 3010, Australia
| | - Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Camilla Gazzana
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Mika Westerhausen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Licheng Xiao
- Department of Physics, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Seyed Sepehr Mohajerani
- Department of Physics, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ, 07030, USA
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
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Fröch JE, Li C, Chen Y, Toth M, Kianinia M, Kim S, Aharonovich I. Purcell Enhancement of a Cavity-Coupled Emitter in Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104805. [PMID: 34837313 DOI: 10.1002/smll.202104805] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Revised: 10/03/2021] [Indexed: 06/13/2023]
Abstract
Integration of solid-state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic-based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride (hBN) have emerged as a viable candidate over the last years. While the fundamental physical properties have been intensively studied, only a few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for a quantum emitter. In this work, the resonant tuning of a monolithic cavity integrated hBN quantum emitter is demonstrated through gas condensation at cryogenic temperature. In resonance, an emission enhancement and lifetime reduction are observed, with an estimate for the Purcell factor of ≈15.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria, 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
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