Probing Spatial Phonon Correlation Length in Post-Transition Metal Monochalcogenide GaS Using Tip-Enhanced Raman Spectroscopy

Intrinsic and Strain-Dependent Properties of Suspended WSe2 Crystallites toward Next-Generation Nanoelectronics and Quantum-Enabled Sensors

Two-dimensional (2D) layered materials exhibit great potential for high-performance electronics, where knowledge of their thermal and phononic properties is critical toward understanding heat dissipation mechanisms, considered to be a major bottleneck for current generation nanoelectronic, optoelectronic, and quantum-scale devices. In this work, noncontact Raman spectroscopy was used to analyze thermal properties of suspended 2D WSe2 membranes to access the intrinsic properties. Here, the influence of electron-phonon interactions within the parent crystalline WSe2 membranes was deciphered through a comparative analysis of extrinsic substrate-supported WSe2, where heat dissipation mechanisms are intimately tied to the underlying substrate. Moreover, the excitonic states in WSe2 were analyzed by using temperature-dependent photoluminescence spectroscopy, where an enhancement in intensity of the localized excitons in suspended WSe2 was evident. Finally, phononic and electronic properties in suspended WSe2 were examined through nanoscale local strain engineering, where a uniaxial force was induced on the membrane using a Au-coated cantilever within an atomic force microscope. Through the fundamental analysis provided here with temperature and strain-dependent phononic and optoelectronic properties in suspended WSe2 nanosheets, the findings will inform the design of next-generation energy-efficient, high-performance devices based on WSe2 and other 2D materials, including for quantum applications.

Spatially Coherent Tip-Enhanced Raman Spectroscopy Measurements of Electron-Phonon Interaction in a Graphene Device

Coherence length (Lc) of the Raman scattering process in graphene as a function of Fermi energy is obtained with spatially coherent tip-enhanced Raman spectroscopy. Lc decreases when the Fermi energy is moved into the neutrality point, consistent with the concept of the Kohn anomaly within a ballistic transport regime. Since the Raman scattering involves electrons and phonons, the observed results can be rationalized either as due to unusually large variation of the longitudinal optical phonon group velocity vg, reaching twice the value for the longitudinal acoustic phonon, or due to changes in the electron energy uncertainty, both properties being important for optical and transport phenomena that might not be observable by any other technique.

Measurement-induced collective vibrational quantum coherence under spontaneous Raman scattering in a liquid

Spontaneous vibrational Raman scattering is a ubiquitous form of light-matter interaction whose description necessitates quantization of the electromagnetic field. It is usually considered as an incoherent process because the scattered field lacks any predictable phase relationship with the incoming field. When probing an ensemble of molecules, the question therefore arises: What quantum state should be used to describe the molecular ensemble following spontaneous Stokes scattering? We experimentally address this question by measuring time-resolved Stokes-anti-Stokes two-photon coincidences on a molecular liquid consisting of several sub-ensembles with slightly different vibrational frequencies. When spontaneously scattered Stokes photons and subsequent anti-Stokes photons are detected into a single spatiotemporal mode, the observed dynamics is inconsistent with a statistical mixture of individually excited molecules. Instead, we show that the data are reproduced if Stokes-anti-Stokes correlations are mediated by a collective vibrational quantum, i.e. a coherent superposition of all molecules interacting with light. Our results demonstrate that the degree of coherence in the vibrational state of the liquid is not an intrinsic property of the material system, but rather depends on the optical excitation and detection geometry.

Molecular Optomechanics Approach to Surface-Enhanced Raman Scattering

Molecular vibrations constitute one of the smallest mechanical oscillators available for micro-/nanoengineering. The energy and strength of molecular oscillations depend delicately on the attached specific functional groups as well as on the chemical and physical environments. By exploiting the inelastic interaction of molecules with optical photons, Raman scattering can access the information contained in molecular vibrations. However, the low efficiency of the Raman process typically allows only for characterizing large numbers of molecules. To circumvent this limitation, plasmonic resonances supported by metallic nanostructures and nanocavities can be used because they localize and enhance light at optical frequencies, enabling surface-enhanced Raman scattering (SERS), where the Raman signal is increased by many orders of magnitude. This enhancement enables few- or even single-molecule characterization. The coupling between a single molecular vibration and a plasmonic mode constitutes an example of an optomechanical interaction, analogous to that existing between cavity photons and mechanical vibrations. Optomechanical systems have been intensely studied because of their fundamental interest as well as their application in practical implementations of quantum technology and sensing. In this context, SERS brings cavity optomechanics down to the molecular scale and gives access to larger vibrational frequencies associated with molecular motion, offering new possibilities for novel optomechanical nanodevices.

The molecular optomechanics description of SERS is recent, and its implications have only started to be explored. In this Account, we describe the current understanding and progress of this new description of SERS, focusing on our own contributions to the field. We first show that the quantum description of molecular optomechanics is fully consistent with standard classical and semiclassical models often used to describe SERS. Furthermore, we note that the molecular optomechanics framework naturally accounts for a rich variety of nonlinear effects in the SERS signal with increasing laser intensity.

Furthermore, the molecular optomechanics framework provides a tool particularly suited to addressing novel effects of fundamental and practical interest in SERS, such as the emergence of collective phenomena involving many molecules or the modification of the effective losses and energy of the molecular vibrations due to the plasmon–vibration interaction. As compared to standard optomechanics, the plasmonic resonance often differs from a single Lorentzian mode and thus requires a more detailed description of its optical response. This quantum description of SERS also allows us to address the statistics of the Raman photons emitted, enabling the interpretation of two-color correlations of the emerging photons, with potential use in the generation of nonclassical states of light. Current SERS experimental implementations in organic molecules and two-dimensional layers suggest the interest in further exploring intense pulsed illumination, situations of strong coupling, resonant-SERS, and atomic-scale field confinement.

Plasmon-enhanced Raman spectroscopy of two-dimensional semiconductors

Two-dimensional (2D) semiconductors have grown fast into an extraordinary research field due to their unique physical properties compared to other semiconducting materials. The class of materials proved extremely fertile for both fundamental studies and a wide range of applications from electronics/spintronics/optoelectronics to photocatalysis and CO₂reduction. 2D materials are highly confined in the out-of-plane direction and often possess very good environmental stability. Therefore, they have also become a popular material system for the manipulation of optoelectronic properties via numerous external parameters. Being a versatile characterization technique, Raman spectroscopy is used extensively to study and characterize various physical properties of 2D materials. However, weak signals and low spatial resolution hinder its application in more advanced systems where decoding local information plays an important role in advancing our understanding of these materials for nanotechnology applications. In this regard, plasmon-enhanced Raman spectroscopy has been introduced in recent time to investigate local heterogeneous information of 2D semiconductors. In this review, we summarize the recent progress of plasmon-enhanced Raman spectroscopy of 2D semiconductors. We discuss the current state-of-art and provide future perspectives on this specific branch of Raman spectroscopy applied to 2D semiconductors.

Progress of tip-enhanced Raman scattering for the last two decades and its challenges in very recent years

Tip-enhanced Raman scattering (TERS) has recently attracted remarkable attention as a novel nano-spectroscopy technique. TERS, which provides site-specific information, can be performed on any material surface regardless of morphology. Moreover, it can be applied in various environments, such as ambient air, ultrahigh vacuum (UHV), solutions, and electrochemical environments. This review reports on one hand progress of TERS for the last two decades, and on the other hand, its challenges in very recent years. Part of the progress of TERS starts with the prehistory and history of TERS, and then, the characteristics and advantages of TERS are described. Significant emphasis is put on the development of TERS instrumentation and equipment such as ultrahigh vacuum TERS, liquid TERS, electrochemical-TERS, and tip-preparations. Applications of TERS, particularly those with nanocarbons, biological materials, and surface and interface analysis, are mentioned in some detail. In the part on challenges, we focus on the very recent advances in TERS; progress in spatial resolution to the angstrom scale is the hottest topic. Recent TERS studies performed under UHV, for example chemical imaging at the angstrom scale and Raman detection of bond breaking and making of a chemisorbed up-standing single molecules at single-bond level, are reviewed. Of course, there is no clear border between the two parts. In the last part the perspective of TERS is discussed.

Studying 2D materials with advanced Raman spectroscopy: CARS, SRS and TERS

Raman spectroscopy has been established as a valuable tool to study and characterize two-dimensional (2D) systems, but it exhibits two drawbacks: a relatively weak signal response and a limited spatial resolution. Recently, advanced Raman spectroscopy techniques, such as coherent anti-Stokes spectroscopy (CARS), stimulated Raman scattering (SRS) and tip-enhanced Raman spectroscopy (TERS), have been shown to overcome these two limitations. In this article, we review how useful physical information can be retrieved from different 2D materials using these three advanced Raman spectroscopy and imaging techniques, discussing results on graphene, hexagonal boron-nitride, and transition metal di- and mono-chalcogenides, thus providing perspectives for future work in this early-stage field of research, including similar studies on unexplored 2D systems and open questions.

Exciton-Photonics: From Fundamental Science to Applications

Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned an advanced area of research that focuses on engineering, imaging, and modulating the coupling between excitons and photons, resulting in the formation of hybrid quasiparticles termed exciton-polaritons. This advanced area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and previous investigations of the optical properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is given to recent advances with critical evaluation of the bottlenecks that plague various materials toward practical device implementations including quantum light sources. Our review highlights a growing need for excitonic material development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications.

Theoretical investigation of lattice dynamics, infrared reflectivity, polarized Raman spectra and nature of interlayer coupling in two-dimensional layered gallium sulfide

Gallium sulfide (GaS) is a highly promising two-dimensional layered semiconductor owing to its remarkable thickness dependent electronic and physical properties. In this article, we perform a comprehensiveab initiostudy of lattice dynamics, mode symmetry assignments, polarized Raman and infrared (IR) reflectivity spectra of GaS system. Polarized Raman spectra are obtained for different light polarization set-ups of incoming and scattered light. The frequencies of all allowed vibrational modes at the zone-centre are calculated and symmetry labels are assigned. Furthermore, the variation of frequencies & intensities of Raman/IR active modes of ultrathin GaS films (few layers) as function of film thickness is studied. In addition, we also explore the nature of weak interlayer coupling in GaS. The weak forces between the GaS layers are usually assumed to be due to interlayer van der Waals (vdW) interaction. However, this assumption has not been reasonably explained in reported experimental studies. Our study strongly suggests that weak interlayer interactions in GaS may be primarily electrostatic (Coulomb) in nature and therefore the contribution of vdW interactions to layer-layer coupling and lattice dynamics may be significantly lower than that of electrostatic interaction. The suggested nature of interlayer coupling in GaS and related III-VI semiconductors may have important implications in determination of their various physical properties.

Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide

Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula: see text] and A[Formula: see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different [Formula: see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula: see text] mode is ∼ -0.016 cm^-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula: see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm^-1 K^-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm^-1 K^-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm^-1 K^-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.

The Expanding Frontiers of Tip-Enhanced Raman Spectroscopy

Fundamental understanding of chemistry and physical properties at the nanoscale enables the rational design of interface-based systems. Surface interactions underlie numerous technologies ranging from catalysis to organic thin films to biological systems. Since surface environments are especially prone to heterogeneity, it becomes crucial to characterize these systems with spatial resolution sufficient to localize individual active sites or defects. Spectroscopy presents as a powerful means to understand these interactions, but typical light-based techniques lack sufficient spatial resolution. This review describes the growing number of applications for the nanoscale spectroscopic technique, tip-enhanced Raman spectroscopy (TERS), with a focus on developments in areas that involve measurements in new environmental conditions, such as liquid, electrochemical, and ultrahigh vacuum. The expansion into unique environments enables the ability to spectroscopically define chemistry at the spatial limit. Through the confinement and enhancement of light at the apex of a plasmonic scanning probe microscopy tip, TERS is able to yield vibrational fingerprint information of molecules and materials with nanoscale resolution, providing insight into highly localized chemical effects.

Vapor-Liquid-Solid Growth and Optoelectronics of Gallium Sulfide van der Waals Nanowires

Nanowires of layered van der Waals (vdW) crystals are of interest due to structural characteristics and emerging properties that have no equivalent in conventional 3D crystalline nanostructures. Here, vapor-liquid-solid growth, optoelectronics, and photonics of GaS vdW nanowires are studied. Electron microscopy and diffraction demonstrate the formation of high-quality layered nanostructures with different vdW layer orientation. GaS nanowires with vdW stacking perpendicular to the wire axis have ribbon-like morphologies with lengths up to 100 μm and uniform width. Wires with axial layer stacking show tapered morphologies and a corrugated surface due to twinning between successive few-layer GaS sheets. Layered GaS nanowires are excellent wide-bandgap optoelectronic materials with E_g = 2.65 eV determined by single-nanowire absorption measurements. Nanometer-scale spectroscopy on individual nanowires shows intense blue band-edge luminescence along with longer wavelength emissions due to transitions between gap states and photonic properties such as interference of confined waveguide modes propagating within the nanowires. The combined results show promise for applications in electronics, optoelectronics, and photonics, as well as photo- or electrocatalysis owing to a high density of reactive edge sites, and intercalation-type energy storage benefiting from facile access to the interlayer vdW gaps.