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Luan W, Zhao Z, Li H, Zhai Y, Lv Z, Zhou K, Xue S, Zhang M, Yan Y, Cao Y, Ding G, Han ST, Kuo CC, Zhou Y. Near-Infrared Response Organic Synaptic Transistor for Dynamic Trace Extraction. J Phys Chem Lett 2024; 15:8845-8852. [PMID: 39167716 DOI: 10.1021/acs.jpclett.4c02238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
The development of neuromorphic hardware capable of detecting and recognizing moving targets through an in-sensor computing strategy is considered to be an important component of the construction of edge computing systems with distributed computation. In addition to responsiveness to visible light, the implementation of neuromorphic hardware should also demonstrate the ability to sense and process nonvisible light, which is essential for tracking target object trajectories in specialized environments. In this work, we fabricated an organic synaptic transistor with a near-infrared (NIR) response by incorporating doped LaF3: Yb/Ho upconversion quantum dots (UCQDs) into the channel of a Poly3-hexylthiophene (P3HT)-based organic field effect transistor (FET), serving as charge trapping and infrared sensing sites. The obtained synaptic transistor not only replicates common synaptic behaviors when exposed to NIR illumination but also demonstrates potential applications for the dynamic trajectory recognition of animals in the dark. Compared to other monitoring technologies, P3HT transistors doped with LaF3: Yb/Ho UCQDs exhibit distinct advantages, including a NIR response, high-efficiency computing, and sensitivity, which provide an experimental foundation and a design reference for the development of next-generation intelligent dynamic image recognition systems.
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Affiliation(s)
- Wanhong Luan
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
| | - Zherui Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
| | - Hang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- The Construction Quality Supervision and Inspection Station of Zhuhai, Zhuhai 519000, China
| | - Shuangmei Xue
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China
| | - Meng Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China
| | - Yan Yan
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China
| | - Yan Cao
- South China Advanced Institute for Soft Matter Science and Technology, School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Guanglong Ding
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR 999077, China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China
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2
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Manzhos S, Chen QG, Lee WY, Heejoo Y, Ihara M, Chueh CC. Computational Investigation of the Potential and Limitations of Machine Learning with Neural Network Circuits Based on Synaptic Transistors. J Phys Chem Lett 2024; 15:6974-6985. [PMID: 38941557 PMCID: PMC11247485 DOI: 10.1021/acs.jpclett.4c01413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/30/2024]
Abstract
Synaptic transistors have been proposed to implement neuron activation functions of neural networks (NNs). While promising to enable compact, fast, inexpensive, and energy-efficient dedicated NN circuits, they also have limitations compared to digital NNs (realized as codes for digital processors), including shape choices of the activation function using particular types of transistor implementation, and instabilities due to noise and other factors present in analog circuits. We present a computational study of the effects of these factors on NN performance and find that, while accuracy competitive with traditional NNs can be realized for many applications, there is high sensitivity to the instability in the shape of the activation function, suggesting that, when highly accurate NNs are required, high-precision circuitry should be developed beyond what has been reported for synaptic transistors to date.
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Affiliation(s)
- Sergei Manzhos
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Qun Gao Chen
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106, Taiwan
| | - Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei 106, Taiwan
| | - Yoon Heejoo
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Manabu Ihara
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
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3
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Bong JH, Grebenchuk S, Nikolaev KG, Chee CPT, Yang K, Chen S, Baranov D, Woods CR, Andreeva DV, Novoselov KS. Graphene oxide-DNA/graphene oxide-PDDA sandwiched membranes with neuromorphic function. NANOSCALE HORIZONS 2024; 9:863-872. [PMID: 38533738 DOI: 10.1039/d3nh00570d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
The behavior of polyelectrolytes in confined spaces has direct relevance to the protein mediated ion transport in living organisms. In this paper, we govern lithium chloride transport by the interface provided by polyelectrolytes, polycation, poly(diallyldimethylammonium chloride) (PDDA) and, polyanion, double stranded deoxyribonucleic acid (dsDNA), in confined graphene oxide (GO) membranes. Polyelectrolyte-GO interfaces demonstrate neuromorphic functions that were successfully applied with nanochannel ion interactions contributed, resulting in ion memory effects. Excitatory and inhibitory post-synaptic currents were tuned continuously as the number of pulses applied increased accordingly, increasing decay times. Furthermore, we demonstrated the short-term memory of a trained vs untrained device in computation. On account of its simple and safe production along with its robustness and stability, we anticipate our device to be a low dimensional building block for arrays to embed artificial neural networks in hardware for neuromorphic computing. Additionally, incorporating such devices with sensing and actuating parts for a complete feedback loop produces robotics with its own ability to learn by modifying actuation based on sensing data.
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Affiliation(s)
- Jia Hui Bong
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Sergey Grebenchuk
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Konstantin G Nikolaev
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
| | - Celestine P T Chee
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Kou Yang
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
| | - Siyu Chen
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Denis Baranov
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
| | - Colin R Woods
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Daria V Andreeva
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, 117544, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
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4
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Biswas S, Jang H, Lee Y, Choi H, Kim Y, Kim H, Zhu Y. Recent advancements in implantable neural links based on organic synaptic transistors. EXPLORATION (BEIJING, CHINA) 2024; 4:20220150. [PMID: 38855618 PMCID: PMC11022612 DOI: 10.1002/exp.20220150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 09/15/2023] [Indexed: 06/11/2024]
Abstract
The progress of brain synaptic devices has witnessed an era of rapid and explosive growth. Because of their integrated storage, excellent plasticity and parallel computing, and system information processing abilities, various field effect transistors have been used to replicate the synapses of a human brain. Organic semiconductors are characterized by simplicity of processing, mechanical flexibility, low cost, biocompatibility, and flexibility, making them the most promising materials for implanted brain synaptic bioelectronics. Despite being used in numerous intelligent integrated circuits and implantable neural linkages with multiple terminals, organic synaptic transistors still face many obstacles that must be overcome to advance their development. A comprehensive review would be an excellent tool in this respect. Therefore, the latest advancements in implantable neural links based on organic synaptic transistors are outlined. First, the distinction between conventional and synaptic transistors are highlighted. Next, the existing implanted organic synaptic transistors and their applicability to the brain as a neural link are summarized. Finally, the potential research directions are discussed.
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Affiliation(s)
- Swarup Biswas
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyo‐won Jang
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Yongju Lee
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Hyojeong Choi
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
| | - Yoon Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
| | - Hyeok Kim
- School of Electrical and Computer Engineering, Center for Smart Sensor System of Seoul (CS4)University of SeoulSeoulRepublic of Korea
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
- Central Business, SENSOMEDICheongju‐siRepublic of Korea
- Institute of Sensor System, SENSOMEDICheongjuRepublic of Korea
- Energy FlexSeoulRepublic of Korea
| | - Yangzhi Zhu
- Terasaki Institute for Biomedical InnovationLos AngelesCaliforniaUSA
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Sung J, Chung S, Jang Y, Jang H, Kim J, Lee C, Lee D, Jeong D, Cho K, Kim YS, Kang J, Lee W, Lee E. Unveiling the Role of Side Chain for Improving Nonvolatile Characteristics of Conjugated Polymers-Based Artificial Synapse. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400304. [PMID: 38408158 DOI: 10.1002/advs.202400304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Indexed: 02/28/2024]
Abstract
Interest has grown in services that consume a significant amount of energy, such as large language models (LLMs), and research is being conducted worldwide on synaptic devices for neuromorphic hardware. However, various complex processes are problematic for the implementation of synaptic properties. Here, synaptic characteristics are implemented through a novel method, namely side chain control of conjugated polymers. The developed devices exhibit the characteristics of the biological brain, especially spike-timing-dependent plasticity (STDP), high-pass filtering, and long-term potentiation/depression (LTP/D). Moreover, the fabricated synaptic devices show enhanced nonvolatile characteristics, such as long retention time (≈102 s), high ratio of Gmax/Gmin, high linearity, and reliable cyclic endurance (≈103 pulses). This study presents a new pathway for next-generation neuromorphic computing by modulating conjugated polymers with side chain control, thereby achieving high-performance synaptic properties.
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Affiliation(s)
- Junho Sung
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Sein Chung
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Yongchan Jang
- Department of Polymer Science and Engineering, Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chan Lee
- Department of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Donghwa Lee
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Dongyeong Jeong
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Youn Sang Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Suwon, 16229, Republic of Korea
| | - Joonhee Kang
- Department of Nanoenergy Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Wonho Lee
- Department of Polymer Science and Engineering, Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Eunho Lee
- Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
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6
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Zeng YH, Chu FJ, Shih LC, Chen YC, Chen JS. Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9563-9573. [PMID: 36752393 DOI: 10.1021/acsami.2c18699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.
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Affiliation(s)
- Yun-Huei Zeng
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Fang-Jui Chu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yu-Chieh Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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7
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Komaba K, Jo T, Kumai R, Goto H. Synthesis of conductive polymer alloys by electrochemical polymerization in chiral liquid crystal. JOURNAL OF MACROMOLECULAR SCIENCE PART A-PURE AND APPLIED CHEMISTRY 2022. [DOI: 10.1080/10601325.2022.2138765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Affiliation(s)
- Kyoka Komaba
- Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan
| | - Tomoaki Jo
- Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan
| | - Reiji Kumai
- Photon Factory, Institute of Materials Structure Science, KEK, Tsukuba, Japan
| | - Hiromasa Goto
- Department of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan
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8
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Yang Y, Wu Y, He W, Tien H, Yang W, Michinobu T, Chen W, Lee W, Chueh C. Tuning Ambipolarity of the Conjugated Polymer Channel Layers of Floating-Gate Free Transistors: From Volatile Memories to Artificial Synapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203025. [PMID: 35986439 PMCID: PMC9631064 DOI: 10.1002/advs.202203025] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Revised: 07/24/2022] [Indexed: 05/22/2023]
Abstract
Three-terminal synaptic transistor has drawn significant research interests for neuromorphic computation due to its advantage of facile device integrability. Lately, bulk-heterojunction-based synaptic transistors with bipolar modulation are proposed to exempt the use of an additional floating gate. However, the actual correlation between the channel's ambipolarity, memory characteristic, and synaptic behavior for a floating-gate free transistor has not been investigated yet. Herein, by studying five diketopyrrolopyrrole-benzotriazole dual-acceptor random conjugated polymers, a clear correlation among the hole/electron ratio, the memory retention characteristic, and the synaptic behavior for the polymer channel layer in a floating-gate free transistor is described. It reveals that the polymers with balanced ambipolarity possess better charge trapping capabilities and larger memory windows; however, the high ambipolarity results in higher volatility of the memory characteristics, namely poor memory retention capability. In contrast, the polymer with a reduced ambipolarity possesses an enhanced memory retention capability despite showing a reduced memory window. It is further manifested that this enhanced charge retention capability enables the device to present artificial synaptic characteristics. The results highlight the importance of the channel's ambipolarity of floating-gate free transistors on the resultant volatile memory characteristics and synaptic behaviors.
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Affiliation(s)
- Yu‐Ting Yang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Ying‐Sheng Wu
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
| | - Waner He
- Department of Materials Science and EngineeringTokyo Institute of Technology2‐12‐1 Ookayama, Meguro‐kuTokyo152‐8552Japan
| | - Hsin‐Chiao Tien
- Research and Development Center for Smart Textile Technology and Department of Chemical Engineering and BiotechnologyNational Taipei University of TechnologyTaipei106Taiwan
| | - Wei‐Chen Yang
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center of Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Tsuyoshi Michinobu
- Department of Materials Science and EngineeringTokyo Institute of Technology2‐12‐1 Ookayama, Meguro‐kuTokyo152‐8552Japan
| | - Wen‐Chang Chen
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center of Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
| | - Wen‐Ya Lee
- Research and Development Center for Smart Textile Technology and Department of Chemical Engineering and BiotechnologyNational Taipei University of TechnologyTaipei106Taiwan
| | - Chu‐Chen Chueh
- Department of Chemical EngineeringNational Taiwan UniversityTaipei10617Taiwan
- Advanced Research Center of Green Materials Science and TechnologyNational Taiwan UniversityTaipei10617Taiwan
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9
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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10
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Jeong B, Gkoupidenis P, Asadi K. Solution-Processed Perovskite Field-Effect Transistor Artificial Synapses. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104034. [PMID: 34609764 DOI: 10.1002/adma.202104034] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Revised: 09/30/2021] [Indexed: 06/13/2023]
Abstract
Metal halide perovskites are distinctive semiconductors that exhibit both ionic and electronic transport and are promising for artificial synapses. However, developing a 3-terminal transistor artificial synapse with the perovskite channel remains elusive due to the lack of a proper technique to regulate mobile ions in a non-volatile manner. Here, a solution-processed perovskite transistor is reported for artificial synapses through the implementation of a ferroelectric gate. The ferroelectric polarization provides a non-volatile electric field on the perovskite, leading to fixation of the mobile ions and hence modulation of the electronic conductance of the channel. Multi-state channel conductance is realized by partial ferroelectric polarization. The ferroelectric-gated perovskite transistor is successfully used as an artificial synapse that emulates basic synaptic functions such as long-term plasticity with excellent linearity, short-term as well as spike-timing-dependent plasticity. The strategy to regulate ion dynamics in the perovskites using the ferroelectric gate suggests a generic route to employ perovskites for synaptic electronics.
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Affiliation(s)
- Beomjin Jeong
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Organic Material Science and Engineering, Pusan National University, Busandaehak-ro 63 beongil 2, Geumjeong-gu, Busan, 46241, Republic of Korea
| | | | - Kamal Asadi
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Physics, University of Bath, Claverton Down, Bath, BA3 3YA, UK
- Centre for Therapeutic Innovation, University of Bath, Claverton Down, Bath, BA3 3YA, UK
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11
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Scaccabarozzi AD, Basu A, Aniés F, Liu J, Zapata-Arteaga O, Warren R, Firdaus Y, Nugraha MI, Lin Y, Campoy-Quiles M, Koch N, Müller C, Tsetseris L, Heeney M, Anthopoulos TD. Doping Approaches for Organic Semiconductors. Chem Rev 2021; 122:4420-4492. [PMID: 34793134 DOI: 10.1021/acs.chemrev.1c00581] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.
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Affiliation(s)
- Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Aniruddha Basu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Filip Aniés
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Jian Liu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Osnat Zapata-Arteaga
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Ross Warren
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Yuliar Firdaus
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.,Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia
| | - Mohamad Insan Nugraha
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Mariano Campoy-Quiles
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Norbert Koch
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.,Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens GR-15780, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
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12
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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13
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Lee H, Won Y, Oh JH. Neuromorphic bioelectronics based on semiconducting polymers. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210502] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- HaeRang Lee
- School of Chemical and Biological Engineering Institute of Chemical Processes, Seoul National University Seoul South Korea
| | - Yousang Won
- School of Chemical and Biological Engineering Institute of Chemical Processes, Seoul National University Seoul South Korea
| | - Joon Hak Oh
- School of Chemical and Biological Engineering Institute of Chemical Processes, Seoul National University Seoul South Korea
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14
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Qin W, Kang BH, Kim HJ. Flexible Artificial Synapses with a Biocompatible Maltose-Ascorbic Acid Electrolyte Gate for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:34597-34604. [PMID: 34279076 DOI: 10.1021/acsami.1c07073] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
As constructing hardware technology is widely regarded as an important step toward realizing brain-like computers and artificial intelligence systems, the development of artificial synaptic electronics that can simulate biological synaptic functions is an emerging research field. Among the various types of artificial synapses, synaptic transistors using an electrolyte as the gate electrode have been implemented as the high capacitance of the electrolyte increases the driving current and lowers operating voltages. Here, transistors using maltose-ascorbic acid as the proton-conducting electrolyte are proposed. A novel electrolyte composed of maltose and ascorbic acid, both of which are biocompatible, enables the migration of protons. This allows the channel conductance of the transistors to be modulated with the gate input pulse voltage, and fundamental synaptic functions including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation, and long-term depression can be successfully emulated. Furthermore, the maltose-ascorbic acid electrolyte (MAE)-gated synaptic transistors exhibit high mechanical endurance, with near-linear conductivity modulation and repeatability after 1000 bending cycles under a curvature radius of 5 mm. Benefitting from its excellent biodegradability and biocompatibility, the proposed MAE has potential applications in environmentally friendly, economical, and high-performance neuromorphic electronics, which can be further applied to dermal electronics and implantable electronics in the future.
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Affiliation(s)
- Wei Qin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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15
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Liu Q, Zhao C, Zhao T, Liu Y, Mitrovic IZ, Xu W, Yang L, Zhao CZ. Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18961-18973. [PMID: 33848133 DOI: 10.1021/acsami.0c20947] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The ecofriendly combustion synthesis (ECS) and self-combustion synthesis (ESCS) have been successfully utilized to deposit high-k aluminum oxide (AlOx) dielectrics at low temperatures and applied for aqueous In2O3 thin-film transistors (TFTs) accordingly. The ECS and ESCS processes facilitate the formation of high-quality dielectrics at lower temperatures compared to conventional methods based on an ethanol precursor, as confirmed by thermal analysis and chemical composition characterization. The aqueous In2O3 TFTs based on ECS and ESCS-AlOx show enhanced electrical characteristics and counterclockwise transfer-curve hysteresis. The memory-like counterclockwise behavior in the transfer curve modulated by the gate bias voltage is comparable to the signal modulation by the neurotransmitters. ECS and ESCS transistors are employed to perform synaptic emulation; various short-term and long-term memory functions are emulated with low operating voltages and high excitatory postsynaptic current levels. High stability and reproducibility are achieved within 240 pulses of long-term synaptic potentiation and depression. The synaptic emulation functions achieved in this work match the demand for artificial neural networks (ANN), and a multilayer perceptron (MLP) is developed using an ECS-AlOx synaptic transistor for image recognition. A superior recognition rate of over 90% is achieved based on ECS-AlOx synaptic transistors, which facilitates the implementation of the metal-oxide synaptic transistor for future neuromorphic computing via an ecofriendly route.
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Affiliation(s)
- Qihan Liu
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Tianshi Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Yina Liu
- Department of Applied Mathematics, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Ivona Z Mitrovic
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Wangying Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518061, China
| | - Li Yang
- Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Ce Zhou Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
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