Large Spin-To-Charge Conversion at the Two-Dimensional Interface of Transition-Metal Dichalcogenides and Permalloy

Disentangling edge and bulk spin-to-charge interconversion in MoS2 monolayer flakes

Semiconductor transition metal dichalcogenides are an archetype for spintronic devices due to their spin-to-charge interconversion mechanisms. However, the exact microscopic origin of this interconversion is not yet determined. In our study, we investigated light-induced spin pumping in YIG/MoS2 heterostructures. Our findings revealed that the MoS2 monolayer microsized flakes contribute to spin current injection through two distinct mechanisms: metallic edge states and semiconductor area states. The competition between these mechanisms, influenced by the flake size, leads to different behaviors of spin-pumping. Our calculations of the local density of states, by means of density functional theory, of a flake show that light-driven spin current injection can be controlled based on the intensity of light with a suitable wavelength. We demonstrate that a lightdriven spin current injection can enhance up to very high values, attenuate, or even switch on/off the spin-to-charge interconversion. These results hold promise for developing low energy-consuming opto-spintronic device applications.

Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature

Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation. This limitation has motivated intense research into the voltage-driven manipulation of spin signals to achieve energy-efficient device operation. Here, we show non-volatile control of spin-charge conversion at room temperature in graphene-based heterostructures through Fermi level tuning. We use a polymeric ferroelectric film to induce non-volatile charging in graphene. To demonstrate the switching of spin-to-charge conversion we perform ferromagnetic resonance and inverse Edelstein effect experiments. The sign change of output voltage is derived by the change of carrier type, which can be achieved solely by a voltage pulse. Our results provide an alternative approach for the electric-field control of spin-charge conversion, which constitutes a building block for the next generation of spin-orbitronic memory and logic devices.

Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.

Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.

Automated mechanical exfoliation technique: a spin pumping study in YIG/TMD heterostructures

Spintronics devices rely on the generation and manipulation of spin currents. Two-dimensional transition-metal dichalcogenides (TMDs) are among the most promising materials for a spin current generation due to a lack of inversion symmetry at the interface with the magnetic material. Here, we report on the fabrication of Yttrium Iron Garnet(YIG)/TMD heterostructures by means of a crude and fast method. While the magnetic insulator single-crystalline YIG thin films were grown by magnetron sputtering, the TMDs, namely MoS2 and MoSe2, were directly deposited onto YIG films using an automated mechanical abrasion method. Despite the brute force aspect of the method, it produces high-quality interfaces, which are suitable for spintronic device applications. The spin current density and the effective spin mixing conductance were measured by ferromagnetic resonance, whose values found are among the highest reported in the literature. Our method can be scaled to produce ferromagnetic materials/TMD heterostructures on a large scale, further advancing their potential for practical applications.

High temperature stability in few atomic layer MoS2 based thin film heterostructures: structural, static and dynamic magnetization properties

Layered transition metal dichalcogenides (TMDs) have shown commendable properties for spintronic applications. From the device perspective, the structural quality of the TMD as well as its interface with the adjacent ferromagnetic (FM) layer is of paramount importance. Here, we present the spin-dynamic behaviour in the widely studied TMDs, i.e., MoS₂ using Co₆₀Fe₂₀B₂₀ (CoFeB), i.e., in MoS₂(1-4 layers)/CoFeB(4-15 nm) heterostructures, both in the as-grown state and in the in situ annealed state (400 °C in a vacuum). Raman spectroscopy revealed systematic variation in the separation (δ) between the characteristic Raman shifts corresponding to the E_2g and A_1gvis-à-vis the number of layers (n_L) of MoS₂. The analysis of the ferromagnetic resonance (FMR) spectroscopy measurements performed on these heterostructures revealed the spin pumping from CoFeB to the MoS₂ layer as evidenced by the ∼49% (∼51%) enhancement in the effective damping parameter with respect to the damping parameter of bare as-deposited (annealed) CoFeB films. This enhancement is attributed to the spin-pumping owing to the high spin-orbit coupling of monolayer MoS₂. The latter is also confirmed by density functional theory calculations. By finding the effective spin mixing conductance of the MoS₂/CoFeB interface, the effective spin current density in the MoS₂ layer is estimated to increase from ∼0.3 to 0.7 MA m^-2 with CoFeB thickness for both the as-deposited and annealed heterostructures. Furthermore, the δ vs. n_L curve of the as-deposited heterostructure did not show any significant change upon annealing, which demonstrated that the spin transport and magnetic properties of these heterostructures remained unaffected even after annealing at a high temperature of 400 °C. Hence, this establishes the high thermal stability of the sputter grown MoS₂/CoFeB heterostructures. Thus, this study highlights the important role of MoS₂ as an efficient spin current-generating source for spin-orbit torque based magnetic memory applications, given the high-temperature stability and high-quality monolayers of MoS₂ and its excellent performance with CoFeB thin films.