1
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Song J, Liu H, Zhao Z, Lin P, Yan F. Flexible Organic Transistors for Biosensing: Devices and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2300034. [PMID: 36853083 DOI: 10.1002/adma.202300034] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Flexible and stretchable biosensors can offer seamless and conformable biological-electronic interfaces for continuously acquiring high-fidelity signals, permitting numerous emerging applications. Organic thin film transistors (OTFTs) are ideal transducers for flexible and stretchable biosensing due to their soft nature, inherent amplification function, biocompatibility, ease of functionalization, low cost, and device diversity. In consideration of the rapid advances in flexible-OTFT-based biosensors and their broad applications, herein, a timely and comprehensive review is provided. It starts with a detailed introduction to the features of various OTFTs including organic field-effect transistors and organic electrochemical transistors, and the functionalization strategies for biosensing, with a highlight on the seminal work and up-to-date achievements. Then, the applications of flexible-OTFT-based biosensors in wearable, implantable, and portable electronics, as well as neuromorphic biointerfaces are detailed. Subsequently, special attention is paid to emerging stretchable organic transistors including planar and fibrous devices. The routes to impart stretchability, including structural engineering and material engineering, are discussed, and the implementations of stretchable organic transistors in e-skin and smart textiles are included. Finally, the remaining challenges and the future opportunities in this field are summarized.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Peng Lin
- Shenzhen Key Laboratory of Special Functional Materials and Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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2
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Carey T, Maughan J, Doolan L, Caffrey E, Garcia J, Liu S, Kaur H, Ilhan C, Seyedin S, Coleman JN. Knot Architecture for Biocompatible and Semiconducting 2D Electronic Fiber Transistors. SMALL METHODS 2024:e2301654. [PMID: 38602193 DOI: 10.1002/smtd.202301654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 03/26/2024] [Indexed: 04/12/2024]
Abstract
Wearable devices have generally been rigid due to their reliance on silicon-based technologies, while future wearables will utilize flexible components for example transistors within microprocessors to manage data. Two-dimensional (2D) semiconducting flakes have yet to be investigated in fiber transistors but can offer a route toward high-mobility, biocompatible, and flexible fiber-based devices. Here, the electrochemical exfoliation of semiconducting 2D flakes of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2) is shown to achieve homogeneous coatings onto the surface of polyester fibers. The high aspect ratio (>100) of the flake yields aligned and conformal flake-to-flake junctions on polyester fibers enabling transistors with mobilities μ ≈1 cm2 V-1 s-1 and a current on/off ratio, Ion/Ioff ≈102-104. Furthermore, the cytotoxic effects of the MoS2 and WSe2 flakes with human keratinocyte cells are investigated and found to be biocompatible. As an additional step, a unique transistor 'knot' architecture is created by leveraging the fiber diameter to establish the length of the transistor channel, facilitating a route to scale down transistor channel dimensions (≈100 µm) and utilize it to make a MoS2 fiber transistor with a human hair that achieves mobilities as high as μ ≈15 cm2 V-1 s-1.
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Affiliation(s)
- Tian Carey
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Jack Maughan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Luke Doolan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Eoin Caffrey
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - James Garcia
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Shixin Liu
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Harneet Kaur
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Cansu Ilhan
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
| | - Shayan Seyedin
- School of Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centers, Trinity College Dublin, Dublin, Dublin 2, Ireland
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3
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Zhou X, Wang Z, Xiong T, He B, Wang Z, Zhang H, Hu D, Liu Y, Yang C, Li Q, Chen M, Zhang Q, Wei L. Fiber Crossbars: An Emerging Architecture of Smart Electronic Textiles. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300576. [PMID: 37042804 DOI: 10.1002/adma.202300576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 03/18/2023] [Indexed: 06/19/2023]
Abstract
Smart wearables have a significant impact on people's daily lives, enabling personalized motion monitoring, realizing the Internet of Things, and even reshaping the next generation of telemedicine systems. Fiber crossbars (FCs), constructed by crossing two fibers, have become an emerging architecture among the accessible structures of state-of-the-art smart electronic textiles. The mechanical, chemical, and electrical interactions between crossing fibers result in extensive functionalities, leading to the significant development of innovative electronic textiles employing FCs as their basic units. This review provides a timely and comprehensive overview of the structure designs, material selections, and assembly techniques of FC-based devices. The recent advances in FC-based devices are summarized, including multipurpose sensing, multiple-mode computing, high-resolution display, high-efficient power supply, and large-scale textile systems. Finally, current challenges, potential solutions, and future perspectives for FC-based systems are discussed for their further development in scale-up production and commercial applications.
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Affiliation(s)
- Xuhui Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhe Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Xiong
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Bing He
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhixun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Haozhe Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Dongmei Hu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Yanting Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Chunlei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Qingwen Li
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Ming Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Qichong Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, P. R. China
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- The Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
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4
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Xu M, Zhao C, Meng Z, Yan H, Chen H, Jiang Z, Jiang Z, Chen H, Meng L, Hui W, Su Z, Wang Y, Wang Z, Wang J, Gao Y, He Y, Meng H. Nonvolatile Memory Organic Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2307703. [PMID: 37812077 DOI: 10.1002/adma.202307703] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/28/2023] [Indexed: 10/10/2023]
Abstract
In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.
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Affiliation(s)
- Meili Xu
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Changbin Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Zhimin Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hao Yan
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hongming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
| | - Zhixiang Jiang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhuonan Jiang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hong Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Lingqiang Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Wei Hui
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility, Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Yueyue Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Zhenhui Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Jianing Wang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Yuanhong Gao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Yaowu He
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
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5
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Alarcon-Espejo P, Sarabia-Riquelme R, Matrone GM, Shahi M, Mahmoudi S, Rupasinghe GS, Le VN, Mantica AM, Qian D, Balk TJ, Rivnay J, Weisenberger M, Paterson AF. High-Hole-Mobility Fiber Organic Electrochemical Transistors for Next-Generation Adaptive Neuromorphic Bio-Hybrid Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305371. [PMID: 37824715 DOI: 10.1002/adma.202305371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 09/29/2023] [Indexed: 10/14/2023]
Abstract
The latest developments in fiber design and materials science are paving the way for fibers to evolve from parts in passive components to functional parts in active fabrics. Designing conformable, organic electrochemical transistor (OECT) structures using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) fibers has excellent potential for low-cost wearable bioelectronics, bio-hybrid devices, and adaptive neuromorphic technologies. However, to achieve high-performance, stable devices from PEDOT:PSS fibers, approaches are required to form electrodes on fibers with small diameters and poor wettability, that leads to irregular coatings. Additionally, PEDOT:PSS-fiber fabrication needs to move away from small batch processing to roll-to-roll or continuous processing. Here, it is shown that synergistic effects from a superior electrode/organic interface, and exceptional fiber alignment from continuous processing, enable PEDOT:PSS fiber-OECTs with stable contacts, high µC* product (1570.5 F cm-1 V-1 s-1 ), and high hole mobility over 45 cm2 V-1 s-1 . Fiber-electrochemical neuromorphic organic devices (fiber-ENODes) are developed to demonstrate that the high mobility fibers are promising building blocks for future bio-hybrid technologies. The fiber-ENODes demonstrate synaptic weight update in response to dopamine, as well as a form factor closely matching the neuronal axon terminal.
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Affiliation(s)
- Paula Alarcon-Espejo
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Ruben Sarabia-Riquelme
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | | | - Maryam Shahi
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Siamak Mahmoudi
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Gehan S Rupasinghe
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Vianna N Le
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Antonio M Mantica
- Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY, 40506, USA
| | - Dali Qian
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - T John Balk
- Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY, 40506, USA
| | - Jonathan Rivnay
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Matthew Weisenberger
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Alexandra F Paterson
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
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6
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Qian X, Chen X, Zhu L, Zhang QM. Fluoropolymer ferroelectrics: Multifunctional platform for polar-structured energy conversion. Science 2023; 380:eadg0902. [PMID: 37167372 DOI: 10.1126/science.adg0902] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Ferroelectric materials are currently some of the most widely applied material systems and are constantly generating improved functions with higher efficiencies. Advancements in poly(vinylidene fluoride) (PVDF)-based polymer ferroelectrics provide flexural, coupling-efficient, and multifunctional material platforms for applications that demand portable, lightweight, wearable, and durable features. We highlight the recent advances in fluoropolymer ferroelectrics, their energetic cross-coupling effects, and emerging technologies, including wearable, highly efficient electromechanical actuators and sensors, electrocaloric refrigeration, and dielectric devices. These developments reveal that the molecular and nanostructure manipulations of the polarization-field interactions, through facile defect biasing, could introduce enhancements in the physical effects that would enable the realization of multisensory and multifunctional wearables for the emerging immersive virtual world and smart systems for a sustainable future.
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Affiliation(s)
- Xiaoshi Qian
- State Key Laboratory of Mechanical System and Vibration, Interdisciplinary Research Centre, and MOE Key Laboratory for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xin Chen
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Lei Zhu
- Department of Macromolecular Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Q M Zhang
- Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, PA 16802, USA
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7
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Sun F, Jiang H, Wang H, Zhong Y, Xu Y, Xing Y, Yu M, Feng LW, Tang Z, Liu J, Sun H, Wang H, Wang G, Zhu M. Soft Fiber Electronics Based on Semiconducting Polymer. Chem Rev 2023; 123:4693-4763. [PMID: 36753731 DOI: 10.1021/acs.chemrev.2c00720] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
Abstract
Fibers, originating from nature and mastered by human, have woven their way throughout the entire history of human civilization. Recent developments in semiconducting polymer materials have further endowed fibers and textiles with various electronic functions, which are attractive in applications such as information interfacing, personalized medicine, and clean energy. Owing to their ability to be easily integrated into daily life, soft fiber electronics based on semiconducting polymers have gained popularity recently for wearable and implantable applications. Herein, we present a review of the previous and current progress in semiconducting polymer-based fiber electronics, particularly focusing on smart-wearable and implantable areas. First, we provide a brief overview of semiconducting polymers from the viewpoint of materials based on the basic concepts and functionality requirements of different devices. Then we analyze the existing applications and associated devices such as information interfaces, healthcare and medicine, and energy conversion and storage. The working principle and performance of semiconducting polymer-based fiber devices are summarized. Furthermore, we focus on the fabrication techniques of fiber devices. Based on the continuous fabrication of one-dimensional fiber and yarn, we introduce two- and three-dimensional fabric fabricating methods. Finally, we review challenges and relevant perspectives and potential solutions to address the related problems.
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Affiliation(s)
- Fengqiang Sun
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Hao Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Haoyu Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yueheng Zhong
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yiman Xu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yi Xing
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Muhuo Yu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Shanghai Key Laboratory of Lightweight Structural Composites, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Liang-Wen Feng
- Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry, Sichuan University, Chengdu 610065, China
| | - Zheng Tang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
- Center for Advanced Low-dimension Materials, Donghua University, Shanghai 201620, China
| | - Jun Liu
- National Key Laboratory on Electromagnetic Environment Effects and Electro-Optical Engineering, Nanjing 210007, China
| | - Hengda Sun
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Hongzhi Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Gang Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
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8
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Integration of multiple electronic components on a microfibre towards an emerging electronic textile platform. Nat Commun 2022; 13:3173. [PMID: 35676280 PMCID: PMC9178034 DOI: 10.1038/s41467-022-30894-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 05/23/2022] [Indexed: 11/09/2022] Open
Abstract
Electronic fibres have been considered one of the desired device platforms due to their dimensional compatibility with fabrics by weaving with yarns. However, a precise connecting process between each electronic fibre is essential to configure the desired electronic circuits or systems. Here, we present an integrated electronic fibre platform by fabricating electronic devices onto a one-dimensional microfibre substrate. Electronic components such as transistors, inverters, ring oscillators, and thermocouples are integrated together onto the outer surface of a fibre substrate with precise semiconductor and electrode patterns. Our results show that electronic components can be integrated on a single fibre with reliable operation. We evaluate the electronic properties of the chip on the fibre as a multifunctional electronic textile platform by testing their switching and data processing, as well as sensing or transducing units for detecting optical/thermal signals. The demonstration of the electronic fibre suggests significant proof of concepts for the realization of high performance with wearable electronic textile systems. Towards further integration and miniaturization of e-textiles, in this work, authors demonstrate an integrated electronic fibre platform by fabricating multiple electronic components such as transistors, inverters, ring oscillators, and thermocouples onto the outer surface of a microfibre substrate.
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9
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Lin Y, Li G, Yu P, Ercan E, Chen W. Organic liquid crystals in optoelectronic device applications:
Field‐effect
transistors, nonvolatile memory, and photovoltaics. J CHIN CHEM SOC-TAIP 2022. [DOI: 10.1002/jccs.202200061] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Affiliation(s)
- Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Guan‐Syuan Li
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Ping‐Jui Yu
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
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10
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Zhang H, Wang Z, Wang Z, He B, Chen M, Qi M, Liu Y, Xin J, Wei L. Recent progress of fiber-based transistors: materials, structures and applications. FRONTIERS OF OPTOELECTRONICS 2022; 15:2. [PMID: 36637572 PMCID: PMC9756263 DOI: 10.1007/s12200-022-00002-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Accepted: 07/24/2021] [Indexed: 06/17/2023]
Abstract
Wearable electronics on fibers or fabrics assembled with electronic functions provide a platform for sensors, displays, circuitry, and computation. These new conceptual devices are human-friendly and programmable, which makes them indispensable for modern electronics. Their unique properties such as being adaptable in daily life, as well as being lightweight and flexible, have enabled many promising applications in robotics, healthcare, and the Internet of Things (IoT). Transistors, one of the fundamental blocks in electronic systems, allow for signal processing and computing. Therefore, study leading to integration of transistors with fabrics has become intensive. Here, several aspects of fiber-based transistors are addressed, including materials, system structures, and their functional devices such as sensory, logical circuitry, memory devices as well as neuromorphic computation. Recently reported advances in development and challenges to realizing fully integrated electronic textile (e-textile) systems are also discussed.
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Affiliation(s)
- Haozhe Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zhe Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zhixun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bing He
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Mengxiao Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Miao Qi
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yanting Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiwu Xin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
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11
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Lee C, Lee W, Kim H, Kim Y. Water-Soluble Reactive Polymer Blends for Stable Memory Layers in Low-Voltage Nonvolatile Organic Memory Transistors with High Mobility and Data-Retention Characteristics. Macromol Rapid Commun 2022; 43:e2100922. [PMID: 35119151 DOI: 10.1002/marc.202100922] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/25/2022] [Indexed: 11/11/2022]
Abstract
Here we demonstrate low-voltage nonvolatile organic memory transistors, featuring high charge-carrier mobility and outstanding data-retention characteristics, by employing water-soluble reactive polymer blends as a gate-insulating memory layer. Blend films of poly(vinyl alcohol) (PVA) and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) (PVA:PAMPSA) were prepared from their aqueous solutions with various molar ratios of PAMPSA (0∼18 mol%) and thermally annealed at 70 ℃ and 110 ℃. Organic field-effect transistors (OFETs) were fabricated by depositing poly(3-hexylthiophene) (P3HT) channel layers on the thermally-treated PVA:PAMPSA films. Results showed that the hole mobility of OFETs was remarkably increased (ca. 294 times at 70 ℃ and ca. 42 times at 110 ℃) by adding only 2 mol% PAMPSA to the PVA films and further improved at 10 mol% PAMPSA (>11.7 cm2/Vs at 70 ℃ and >3.8 cm2/Vs at 110 ℃). The hysteresis characteristics were rather strengthened for the PVA:PAMPSA layers by annealing at 110 ℃ due to the formation of cross-linking sites, even though the OFETs with the pristine PVA layers did almost lose hysteresis characteristics at 110 ℃. The optimized OFETs with the PVA:PAMPSA layers (10 mol%, 110 ℃) delivered excellent data retention characteristics during >10,000 memory cycles at a voltage range of -5 ∼ +5 V. This article is protected by copyright. All rights reserved.
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Affiliation(s)
- Chulyeon Lee
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Woongki Lee
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Hwajeong Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea.,Priority Research Center, Research Institute of Environmental Science & Technology, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Youngkyoo Kim
- Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea
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12
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Zhao Y, Yu M, Sun J, Zhang S, Li Q, Teng L, Tian Q, Xie R, Li G, Liu L, Liu Z. Electrical Failure Mechanism in Stretchable Thin-Film Conductors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3121-3129. [PMID: 34981914 DOI: 10.1021/acsami.1c22447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Stretchable thin-film conductors are basic building blocks in advanced flexible and stretchable electronics. Current research mainly focuses on strategies to improve stretchability and widen the range of applications of stretchable conductors. However, stability should not be neglected, and the electrical failure mode is one of the most common stability issues that determines the current range and duration in a circuit. In this work, we report the electrical failure mechanism of stretchable conductors. We find a special failure mode for the stretchable conductors, which can be attributed to the coupling effect between local thermal strains and dynamic resistance changes of the thin film. This creates a vicious circle that significantly differs from traditional conductors. Physical parameters related to this special failure mode are investigated in detail. It is found that this mechanism is applicable to different kinds of stretchable conductors. Based on this finding, we also explore methods to modulate the failure of stretchable conductors. The failure mechanism found here provides a fundamental understanding of the current effect of stretchable circuits and is crucial for designing stable stretchable bioelectrodes and circuits.
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Affiliation(s)
- Yang Zhao
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Mei Yu
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
- Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jing Sun
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Shenglong Zhang
- School of Energy and Power Engineering, Shandong University, Jinan 250061, China
- Optics and Thermal Radiation Research Center, Shandong University, Qingdao 266237, China
| | - Qingsong Li
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Lijun Teng
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Qiong Tian
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Ruijie Xie
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Guanglin Li
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
| | - Linhua Liu
- School of Energy and Power Engineering, Shandong University, Jinan 250061, China
- Optics and Thermal Radiation Research Center, Shandong University, Qingdao 266237, China
| | - Zhiyuan Liu
- CAS Key Laboratory of Human-Machine Intelligence-Synergy Systems, Center of Neural Engineering, Shenzhen Institute of Advanced Technology (SIAT), Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China
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13
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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14
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Seyedin S, Carey T, Arbab A, Eskandarian L, Bohm S, Kim JM, Torrisi F. Fibre electronics: towards scaled-up manufacturing of integrated e-textile systems. NANOSCALE 2021; 13:12818-12847. [PMID: 34477768 DOI: 10.1039/d1nr02061g] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The quest for a close human interaction with electronic devices for healthcare, safety, energy and security has driven giant leaps in portable and wearable technologies in recent years. Electronic textiles (e-textiles) are emerging as key enablers of wearable devices. Unlike conventional heavy, rigid, and hard-to-wear gadgets, e-textiles can lead to lightweight, flexible, soft, and breathable devices, which can be worn like everyday clothes. A new generation of fibre-based electronics is emerging which can be made into wearable e-textiles. A suite of start-of-the-art functional materials have been used to develop novel fibre-based devices (FBDs), which have shown excellent potential in creating wearable e-textiles. Recent research in this area has led to the development of fibre-based electronic, optoelectronic, energy harvesting, energy storage, and sensing devices, which have also been integrated into multifunctional e-textile systems. Here we review the key technological advancements in FBDs and provide an updated critical evaluation of the status of the research in this field. Focusing on various aspects of materials development, device fabrication, fibre processing, textile integration, and scaled-up manufacturing we discuss current limitations and present an outlook on how to address the future development of this field. The critical analysis of key challenges and existing opportunities in fibre electronics aims to define a roadmap for future applications in this area.
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Affiliation(s)
- Shayan Seyedin
- Molecular Sciences Research Hub, Department of Chemistry, Imperial College London, London, W12 0BZ, UK.
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15
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Recent Advances in Fiber-Shaped Electronic Devices for Wearable Applications. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11136131] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Fiber electronics is a key research area for realizing wearable microelectronic devices. Significant progress has been made in recent years in developing the geometry and composition of electronic fibers. In this review, we present that recent progress in the architecture and electrical properties of electronic fibers, including their fabrication methods. We intensively investigate the structural designs of fiber-shaped devices: coaxial, twisted, three-dimensional layer-by-layer, and woven structures. In addition, we introduce remarkable applications of fiber-shaped devices for energy harvesting/storage, sensing, and light-emitting devices. Electronic fibers offer high potential for use in next-generation electronics, such as electronic textiles and smart integrated textile systems, which require excellent deformability and high operational reliability.
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16
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Guo S, Wang Z, Chen X, Li L, Li J, Ji D, Li L, Hu W. Low‐voltage polymer‐dielectric‐based organic field‐effect transistors and applications. NANO SELECT 2021. [DOI: 10.1002/nano.202100051] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Affiliation(s)
- Shujing Guo
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Zhongwu Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin China
- Collaborative Innovation Center of Chemical Science and Engineering Tianjin China
| | - Xiaosong Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Lin Li
- Institute of Molecular Plus Tianjin University Tianjin China
| | - Jie Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry Institute of Molecular Aggregation Science Tianjin University Tianjin China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Fuzhou China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University Tianjin China
- Collaborative Innovation Center of Chemical Science and Engineering Tianjin China
- Joint School of National University of Singapore and Tianjin University International Campus of Tianjin University Fuzhou China
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17
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Chiang YC, Hung CC, Lin YC, Chiu YC, Isono T, Satoh T, Chen WC. High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002638. [PMID: 32700349 DOI: 10.1002/adma.202002638] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 06/07/2020] [Indexed: 06/11/2023]
Abstract
A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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18
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Ham S, Kang M, Jang S, Jang J, Choi S, Kim TW, Wang G. One-dimensional organic artificial multi-synapses enabling electronic textile neural network for wearable neuromorphic applications. SCIENCE ADVANCES 2020; 6:eaba1178. [PMID: 32937532 PMCID: PMC10662591 DOI: 10.1126/sciadv.aba1178] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2019] [Accepted: 05/29/2020] [Indexed: 05/10/2023]
Abstract
One-dimensional (1D) devices are becoming the most desirable format for wearable electronic technology because they can be easily woven into electronic (e-) textile(s) with versatile functional units while maintaining their inherent features under mechanical stress. In this study, we designed 1D fiber-shaped multi-synapses comprising ferroelectric organic transistors fabricated on a 100-μm Ag wire and used them as multisynaptic channels in an e-textile neural network for wearable neuromorphic applications. The device mimics diverse synaptic functions with excellent reliability even under 6000 repeated input stimuli and mechanical bending stress. Various NOR-type textile arrays are formed simply by cross-pointing 1D synapses with Ag wires, where each output from individual synapse can be integrated and propagated without undesired leakage. Notably, the 1D multi-synapses achieved up to ~90 and ~70% recognition accuracy for MNIST and electrocardiogram patterns, respectively, even in a single-layer neural network, and almost maintained regardless of the bending conditions.
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Affiliation(s)
- Seonggil Ham
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Minji Kang
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea
| | - Seonghoon Jang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jingon Jang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Sanghyeon Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tae-Wook Kim
- Department of Flexible and Printable Electronics, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do 54896, Republic of Korea.
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
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19
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Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Huilin Li
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
- Henan Key Laboratory of Photovoltaic MaterialsHenan University Kaifeng PR China
| | - Ruopeng Wang
- College of Electronics and Information EngineeringShenzhen University Shenzhen PR China
| | - Su‐Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University Shenzhen PR China
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